Accuracy Test # 17

Based On NTA Abhyas (PRE-MEDICAL)

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SEMICONDUCTOR
ELECTRONICS
 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

1. In p-type
type semiconductor the majority and
minority charge carriers are respectively

(1) Protons and electron

(2) Electrons and protons (1) A=0,B=1 ,C=0
(3) Electrons and holes (2) A=1,B=0,C=0
(4) Holes and electrons (3) A=1,B=0 ,C=1
(4) A=1,B=1 ,C=0
2. A 2V
V battery is connected across AB as
shown in the figure. The value of the current 5. The process of superimposing signal
supplied by the battery when in the first case frequency (i.e. audio wave) on the carrier
battery’s positive terminal is connected to A wave is known as
and in second case when positive terminal of
batttery is connected to B will respectively be : (1) transmission
(2) reception
(3) modulation
(4) detection

6. With respect to the potential of emitter, base

and collector, a n-p--n transistor conducts
when
(1) 0.2 A and 0.1 A
(2) 0.1 A and 0.2 A (1) Both collector and emitter are positive with
(3) 0.2 A and 0.4 A respect to the base

(4) 0.4 A and 0.2 A (2) Collector is positive and emitter is

negative with respect to the base

3. The forward biased diode connection among (3) Collector is positive and emitter is at same
the following is – potential with as base
(4) Both collector and emitter are negative
with respect to the base
(1)
7. The electrical conductivity of semiconductor
(2) increases when
hen electromagnetic radiation of
wavelength shorter than 24800 Å is incident
(3) on it. The band gap for the semiconductor is

(4) (1) 0.9 eV

(2) 0.7 eV

4. To get an output 1 from the circuit shown in (3) 0 .5 eV

the figure, the input must be (4) 1 .1 eV

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 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

8. An n-p-n junction in a common emitter mode 11. The circuit is equivalent to

is used as a simple voltage amplifier with a
collector current of 4mA. The terminal of 8 V
battery is connected to a collector through a
load resistance RL and to the base through a
resistance RB. The collector-emitter
emitter VCE= 4V
base-emitter voltage VBE= 0.6.6 V and base (1) AND gate
current amplification factor βd.c.= 100. Find
values of RL and RB. (2) OR gate
(3) NOT gate
(1) RL=1 kΩ and RB=185 kΩ (4) NAND gate
(2) RL=2 kΩ and RB=150 kΩ
12. An electric field is applied to a semiconductor
(3) RL=1 kΩ and RB=240 kΩ Let the number of charge carriers
carrie be 𝑛 and
(4) RL=3 kΩ and RB=185 kΩ the average drift speed be 𝑣. If the
temperature is increased, then
9. In the given figure there is a DC voltage (1) Both
oth n and v will increase
regulator circuit, with a Zener breakdown
(2) n will increase and v will decrease
voltage = 6 V. If the unregulated input voltage
varies between 10V to 16V, then what is the (3) Both
oth n and v will decrease
maximum Zener current? (4) n will decrease and v will increase

13. A transistor is used as a common emitter

amplifier with a load resistance of 2KΩ. The
input resistance is 150Ω.
150 Base current is
changed by 20μAwhichwhich result in a change in
collector current by 1.5
1 𝑚𝐴. The voltage gain
of the amplifier is

(1) 900
(1) 1.5Ma (2) 1000
(2) 7.5mA (3) 1100
(4) 1200
(3) 3.5mA
(4) 2.5mA 14. If a LED is forward biased then

10. Choose the type of semiconductor from the (1) electrons from the n-type
n side cross the p-
following options for which the electrical n junction and recombine with holes in the
conductivity is due to the breaking of its p-type side
covalent bonds (2) electrons and holes neutralize each other
in depletion region
(1) Donor
(3) at junction and holes remain at rest
(2) Acceptor
(4) none of these
(3) Intrinsic
(4) Extrinsic

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 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

15. A change of 8.0 mA in the emitter current 19. If the ratio of the concentration of electrons
brings a change of 7.9 mA in the collector and that of holes in a semiconductor is 7/5
current. The value of α and β and the ratio of their currents is 7/4, then the
(1) 0.99, 90 ratio of their drift velocities is

(2) 0.96, 79
(1) 4/7
(3) 0.97, 99
(2) 5/8
(4) 0.99, 79
(3) 4/5
16. If a input a full wave rectifier is e= 50sin(314t) (4) 5/4
Volt, diode resistance is 100 Ώ and load
resistance is 1 Ώ ,then pulse frequency of
20. The anode voltage
ge of a photocell is kept
output voltage is
fixed. The wavelength 𝜆 of the light falling on
(1) 50 Hz the cathode is gradually changed. The plate
(2) 100 Hz current I of the photocelI
photocel varies as follows

(3) 150 Hz
(4) 200 Hz

17. A Zener diode is to be used as a voltage (1)

regulator. Identify the correct set up

(2)
(1)

(2) (3)

(3) (4)

21. A crystal of intrinsic silicon

s at room
temperature has a carrier concentration
of 1.6 × 10 𝑚 . If the donor
(4) concentration level is 4.8 × 10 𝑚 ,
then the concentration of holes in the
18. Depletion layer in the p-n
n junction consists of semiconductor is
(1) Electrons
(1) 53 × 10 m
(2) Holes
(2) 4 × 10 m
(3) Positive
ositive and negative ions fixed in their
position (3) 4 × 10 m
(4) Both electron and holes (4) 5.3 × 10 m

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 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

22. The output of the given logic circuit is (1) 0.1V

(2) 0.5V
(3) 0.25V
(4) 0.7V

26. The operating point of transistor amplifier

(1) A + B should be in

(2) A + B
(1) Middle of its active region
(3) A
(2) Middle of the saturation region
(4) B
(3) Middle of its cut--off region

23. A silicon diode has a threshold voltage of
0.7 V. If an input voltage given by 2 sin(
sin(𝜋𝑡) is
supplied to a half- wave rectifier circuit using
this diode, the rectified output has a peak
value of
(4) Between cut off and active region
27. If a half-wave
wave rectifier circuit is operating
from 50 Hz mains, the fundamental
fundamenta
frequency in the ripple will be

(1) 2V (1) 70.7 𝐻𝑧

(2) 1.4V (2) 50𝐻𝑧
(3) 1.3V (3) 25𝐻𝑧
(4) 0.7V (4) 100𝐻𝑧

24. In an p-n
n junction diode, change in
temperature due to heating 28. A common emitter amplifier circuit, built
using an NPN transistor, is shown in the
(1) Does
oes not affect resistance of p
p-n junction figure. Its d c current gain is 250,
𝑅 = 1𝑘𝛺 𝑎𝑛𝑑 𝑉 = 10𝑉. The minimum
(2) Effects
ffects only forward resistance
base current for 𝑉 to reach saturation is
(3) Effects
ffects only reverse resistance
(4) Affects the overall V-II characteristic of p
p-n
junction

25. In the circuit shown in the figure, the base

current 𝐼 is 10 𝜇𝐴 and the collector current is
5.2 m A. The voltage ( 𝑉 ) across the base
and emitter is

(1) 10 𝜇𝐴
(2) 40𝜇𝐴
(3) 7𝜇𝐴
(4) 100𝜇𝐴

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 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

29. The value of transistor parameters, β and α, 32. In a forward biased p-n
p junction diode, which
respectively, for the given figure is of the following graphs is most appropriately
represented the potential barrier in the
depletion region?

(1)

(1) 49, 0.98

(2) 32, 0.64
(3) 29, 0.97 (2)
(4) 45, 0.90

30. The input of A and B for the given Boolean

expression is
(3)
(𝐴 + 𝐵) . (𝐴. 𝐵) = 1

(1) (0,0)
(2) (0,1) (4)
(3) (1,0)
(4) (1,1) 33. The energy band gap is maximum in

31. The value of the resistor, R , needed in the (1) Metals

DC voltage regulator circuit shown here, (2) Superconductors
equals
(3) Insulators
(4) Semiconductors
emiconductors

34. In n-p-n transistor 1010 electrons enters in

emitter region in 10-6 s. if 2 % electrons are
lost in base region then the collector current
and current amplification factor 𝛽 respectively
(1) ( )
are

(2) (1) 1.57 mA, 49

(2) 1.92 mA, 70
(3)
(3) 2 mA, 25
(4) ( ) (4) 2.25 mA, 100

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 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

35. If 𝑙 , 𝑙 , 𝑙 are the lengths of the emitter, base (1) Rectifier

and collector of a transistor, then (2) Dynamo
(3) Transformer
(1) 𝑙 = 𝑙 = 𝑙
(4) Motor
(2) 𝑙 < 𝑙 > 𝑙
(3) 𝑙 < 𝑙 < 𝑙 39. What is value of current I in given circuit
(4) 𝑙 > 𝑙 > 𝑙

36. The circuit shown in following figure contains

two diodes D1 and D2 each with a forward
resistance of 50Ω and with infinite backward
resistance. If the battery voltage is 6 V , the
current through the 100 Ω resistance (in A) is is-
(1) 6 mA
(2) 10 mA
(3) 4 mA
(4) zero

(1) zero 40. A p-n-p transistor circuit is arranged as

shown. It is as
(2) 0.02
(3) 0.03
(4) 0.036

37. The resistance of a germanium junction

diode, whose 𝑉 − 𝐼 characteristics is shown in
the figure, will be (𝑣 = 0.3𝑉)

(1) Common base amplifier circuit

(2) Common – emitter amplifier circuit
(3) Common - collector circuit
(4) None

(1) 5 kΩ 41. In the middle of the depletion layer of a

reverse- biased p-n
n junction, the
(2) 0.2 kΩ
(3) 2.3 kΩ (1) Electric
lectric field is zero
(4) 4.34 kΩ (2) Potential
otential is maximum
(3) Electric
lectric field is maximum
38. Alternating current is converted to direct (4) Potential
otential is zero
current by

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 SEMICONDUCTOR ELECTRONICS NTA/Accuracy Test-17

42. The V − I characteristic of a diode is shown in

the figure. The ratio of forward to reverse bias
resistance is:

(1) 10
(2) 10
(3) 10
(4) 100

43. If 𝐴 = 1 and 𝐵 = 0, then in terms of Boolean

algebra, 𝐴 + 𝐵 =

(1) B
(2) 𝐵. 𝐵
(3) 𝐴
(4) 𝐴̅

44. For a common emitter amplifier, the audio

signal voltage across the collector resistance
2𝑘𝜴 is 2V.
V. If the current amplification factor of
the transistor is 200, and the base resistance
is 1.5 k𝛀,, the input signal voltage and base
current is

(1) 0.15 V and 10 𝜇𝐴

(2) 1.015 V and 1 A
(3) 0.0015 V and 1 mA
(4) 0.0075 V and 5 𝜇𝐴

45. The forbidden energy gap in Ge is 0.72 eV,

given, he = 12400 eV-Å.
Å. The maximum
wavelength of radiation that will generate
electron hole pair is
(1) 172220 Å
(2) 172.2 Å
(3) 17222
222 Å
(4) 1722 Å