Tunnel Diode

BY :
A.VENKATA RAMA KRISHNA REDDY
HT NO: 23B61A7205
 ARTIFICIAL INTELLENGENCE & DATA SCIENCE

Tunnel Diode
• It was introduced by Leo Esaki in 1958.
• Heavily-doped p-n junction
• Width of the depletion layer is very small
(about 100 A).
• It is generally made up of Ge and GaAs
• It shows tunneling phenomenon
VI Characteristics of Tunnel Diode
AT ZERO BIAS (A)
AT SMALL FORWARD VOLTAGE
(10 mV)
AT MAXIMUM TUNNELING CURENT (B)
(50 mV)
AT DECREASING CURRENT REGION (B
to C)
AT HIGHER FORWARD VOLTAGE
(At C- No tunnel current)
AT REVERSE BIAS VOLTAGE
(R)
 CHARACTERISTIC OF TUNNEL DIODE

Ip:- Peak Current

Iv :- Valley Current
Vp:- Peak Voltage
Vv:- Valley
Equivalent Circuit Of
Tunnel Diode When Biased
In Negative Resistance
Region

•Cj- junction diffusion

capacitance
•Rn - Negative resistance
of the device in the NRR
•Ls - Series Inductance
•Rs - Series Resistance

- At higher frequencies
the series Rs and Ls can be
ignored
 Application of Tunnel Diode
• Used as an ultra high speed switch
• Used as logic memory storage device
• Used as an Amplifier
• Used as Microwave oscillator
• Tunnel diode oscillator applied as
sensormodulator for telemetry of
temperature in human beings and animals

Reference
• Electronic Devices & Circuits by S
Salivahanan