PD - 97437A

IRF9310PbF
HEXFET® Power MOSFET

VDS -30 V 6   '

RDS(on) max
4.6 mΩ 6   '
(@VGS = 10V)
6   '
ID
-20 A *   '
(@TA = 25°C)
SO-8

Applications
• Charge and Discharge Switch for Notebook PC Battery Application

Features and Benefits

Features Resulting Benefits

Low RDSon (≤ 4.6mΩ) Lower Conduction Losses

results in
Industry-Standard SO8 Package Multi-Vendor Compatibility
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier

Orderable part number Package Type Standard Pack Note

Form Quantity
IRF9310PbF SO8 Tube/Bulk 95
IRF9310TRPbF SO8 Tape and Reel 4000

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage -30
V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -20
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -16 A
IDM Pulsed Drain Current c -160
PD @TA = 25°C Power Dissipation f 2.5
W
PD @TA = 70°C Power Dissipation f 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150
°C
TSTG Storage Temperature Range

Notes  through are on page 2

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03/19/2010
IRF9310PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) ––– 3.9 4.6 VGS = -10V, ID = -20A e
Static Drain-to-Source On-Resistance
––– 5.8 6.8
mΩ
VGS = -4.5V, ID = -16A e
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V
VDS = VGS, ID = -100µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 VDS = -24V, VGS = 0V
µA
––– ––– -150 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
gfs Forward Transconductance 39 ––– ––– S VDS = -10V, ID = -16A
Qg Total Gate Charge h ––– 58 ––– nC VDS = -15V, VGS = -4.5V, ID = - 16A
Qg Total Gate Charge h ––– 110 165 VGS = -10V
Qgs Gate-to-Source Charge h ––– 17 ––– nC VDS = -15V
Qgd Gate-to-Drain Charge h ––– 28 ––– ID = -16A
RG Gate Resistance h ––– 2.8 ––– Ω
td(on) Turn-On Delay Time ––– 25 ––– VDD = -15V, VGS = -4.5V e
tr Rise Time ––– 47 ––– ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 65 ––– RG = 1.8Ω
tf Fall Time ––– 70 ––– See Figs. 20a &20b
Ciss Input Capacitance ––– 5250 ––– VGS = 0V
Coss Output Capacitance ––– 1300 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 880 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 630 mJ
IAR Avalanche Current c ––– -16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– -2.5
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -160
(Body Diode) c p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V e
trr Reverse Recovery Time ––– 71 107 ns TJ = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge ––– 12 18 nC di/dt = 100A/µs e
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead g ––– 20
RθJA Junction-to-Ambient f ––– 50
°C/W

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.

2 www.irf.com
 IRF9310PbF
1000 1000
≤60µs PULSE WIDTH VGS
≤60µs PULSE WIDTH
VGS
TOP -10V TOP -10V
Tj = 25°C -4.5V Tj = 150°C -4.5V
-3.5V -3.5V
-ID, Drain-to-Source Current (A)

100

-ID, Drain-to-Source Current (A)

-3.1V -3.1V
-2.9V -2.9V
-2.7V -2.7V
-2.5V 100 -2.5V
10 BOTTOM -2.3V BOTTOM -2.3V

1
10

0.1
-2.3V
-2.3V
0.01 1
0.1 1 10 100 0.1 1 10 100
-V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 1.6
ID = -20A

RDS(on) , Drain-to-Source On Resistance

VGS = -10V
-I D, Drain-to-Source Current (Α)

1.4

100
1.2
(Normalized)

T J = 150°C
1.0
10
T J = 25°C

0.8
VDS = -10V
≤60µs PULSE WIDTH
1.0 0.6
1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160

-V GS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

100000 14.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= -16A
C rss = C gd 12.0
-VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= -24V

10.0 VDS= -15V
C, Capacitance(pF)

10000
Ciss
8.0
Coss

Crss 6.0
1000
4.0

2.0

100 0.0
1 10 100 0 25 50 75 100 125 150
-VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com 3
IRF9310PbF
1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec

-I D, Drain-to-Source Current (A)

-I SD, Reverse Drain Current (A)

100.00 100

1msec
T J = 150°C

10.00 10

T J = 25°C
1.00 1
T A = 25°C
10msec
Tj = 150°C
VGS = 0V Single Pulse
0.10 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 10 100
-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

20 2.5

-V GS(th), Gate threshold Voltage (V)

15
-I D, Drain Current (A)

2.0

10
ID = -100µA
1.5
5

0 1.0
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
T A , Ambient Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Ambient Temperature
100

D = 0.50
Thermal Response ( Z thJA ) °C/W

10 0.20
0.10
0.05
1 0.02
0.01

0.1

0.01

Notes:
0.001 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + T A
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

4 www.irf.com
 IRF9310PbF
12 14
RDS(on) , Drain-to -Source On Resistance (mΩ)

RDS(on), Drain-to -Source On Resistance ( mΩ)

ID = -20A

12
10

10
8

8 VGS = -4.5V
6 TJ = 125°C
6
VGS = -10V
4
4
TJ = 25°C
2 2
2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160

-V GS, Gate -to -Source Voltage (V) -I D, Drain Current (A)

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current

2700 1000
EAS , Single Pulse Avalanche Energy (mJ)

ID
2400
TOP -1.8A
-2.7A 800
2100
BOTTOM -16A
Single Pulse Power (W)

1800
600
1500

1200
400
900

600 200
300

0 0
25 50 75 100 125 150 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Starting T J , Junction Temperature (°C) Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 16. Typical Power vs. Time

Driver Gate Drive

P.W.
D.U.T * + P.W.
Period D=
Period

ƒ VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* Reverse Polarity of D.U.T for P-Channel

* VGS = 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
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IRF9310PbF

Id
Vds

Vgs

L
VCC
DUT
0
Vgs(th)
1K
SS
20K

Qgodr Qgd Qgs2 Qgs1

Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform

VDS L
I AS

RG D.U.T
VDD
IAS A
-V
-20V
GS DRIVER
tp 0.01Ω

tp
V(BR)DSS
15V

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

RD
VDS
td(on) tr t d(off) tf
VGS VGS
D.U.T.
RG
10%
-
+ V DD

-VGS
Pulse Width ≤ 1 µs
90%
Duty Factor ≤ 0.1 % VDS

Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms

6 www.irf.com
 IRF9310PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)

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;>@ ;>@
SO-8 Part Marking Information

(;$03/(7+,6,6$1,5) 026)(7
'$7(&2'( <::
3 ',6*1$7(6/($')5((
352'8&7 237,21$/
< /$67',*,72)7+(<($5
;;;; :: :((.
,17(51$7,21$/ ) $ $66(0%/<6,7(&2'(
5(&7,),(5 /27&2'(
/2*2 3$57180%(5

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com 7
IRF9310PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

†
Qualification Information
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
Moisture Sensitivity Level SO-8
(per JEDEC J-STD-020D†††)
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comment
3/18/2010 Figure 16, Power vs. Time curve is modified and updated. All other parameters remain unchanged.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8 www.irf.com
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
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contain dangerous substances. For information on
the types in question please contact your nearest
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