BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, Pilani

Pilani Campus
AUGS/ AGSR Division

FIRST SEMESTER 2023-24

COURSE HANDOUT
Date: 12.08.2023

In addition to part I (General Handout for all courses appended to the Time Table) this portion gives further
specific details regarding the course.
Course No : EEE F214/INSTR F214/ECE F214
Course Title : ELECTRONIC DEVICES
Instructor-in-Charge : NAVNEET GUPTA (ngupta@pilani.bits-pilani.ac.in)
Lecture Instructor : Navneet Gupta and Rahul Kumar
Tutorial Instructors : Arnab Hazra, Abhijit R Asati, Y Sujan, Rahul Kumar, Satyendra Mourya,
Aishwarya Tomar

1. Scope and Objective of the Course:

The course provides a comprehensive understanding of the characteristics, operation and limitations of semiconductor
devices. This course starts with explanation on crystal structure, semiconductor materials, fundamentals of
semiconductors. This course helps in developing the understanding about excess carriers in semiconductors and its
application. In-depth study on ‘junctions’ prepares the students for even a detailed study on devices to be studied later
like FET, BJT, MOSFET viz. commonly employed in Integrated Circuit (IC) technology. Concepts of optoelectronic
diodes will also be discussed in this course.
.
2. Text Books:
B. G. Streetman, and Sanjay Banerjee, “Solid State Electronic Devices”, PHI learning Private Limited.

3. Reference Books:
(i) Donald A Neamen and D.Biswas, “Semiconductor Physics and Devices”, Tata McGraw Hill Limited.
(ii) Robert F Pierret, “Semiconductor Devices Fundamentals” Pearson Education, Inc.
4. Course Plan:
Module Lec. No. Topics Learning Objectives Reference
to text
1-2 Brief history, recent To know about semiconductor and its 1.1-1.3
Semiconductor: trends and crystal lattices importance in the vast majority of all
Introduction solid state devices.
3-5 Semiconductor models To understand energy bands and how 3.1-3.2
Semiconductor: Charge carriers, effective bandgaps are formed. To appreciate the
Carrier Modeling mass. idea of doping in semiconductors.
6-7 Statistics of donors and To use the density of states and Fermi- 3.3
acceptors, Space charge Dirac statistics to calculate carrier
neutrality concentration and to understand the
concept of compensation.
8 Conductivity and To understand the effect of electric and 3.4-3.5
mobility, Hall effect magnetic fields on drift of carriers
Excess carriers 9-10 Optical absorption, To understand how photons interact with 4.1 – 4.3
in excess carrier, Quasi- semiconductors, generation
Semiconductors Fermi level recombination of excess carriers.

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 BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, Pilani
Pilani Campus
AUGS/ AGSR Division

11-13 Diffusion of carriers, To introduce the diffusion of carriers, 4.4

built-in field, continuity transport equation and quasi-fermi levels
equation in non-equilibrium.
PN Junction 14-16 Equilibrium conditions, To determine the band diagram of a p-n 5.2
Electrostatics Fermi levels, Poisson’s junction in equilibrium.
Equation, Depletion layer
model.
PN Junction 17-20 Carrier injection, diode To know the current flow components in 5.3-5.4
Diode: IV equation, and I-V an ideal diodes
Characteristics characteristics, biasing,
Reverse-bias breakdown
PN Junction 21-23 Capacitance of p-n To understand depletion capacitance due 5.5-5.6
Diode: Small- junctions, Transient to dopant charges and diffusion
Signal & Analysis, non-ideal capacitance due to mobile carriers.
Transient behavior.
Response
24-28 BJT operations, terminal To analyze BJT band diagrams, 7.1, 7.2,
Bipolar Junction current, Gummel plot, amplifications, terminal currents and 7.4 – 7.6
Transistors small-signal model, biasing.
charge control model,
switching
Metal- 29-30 Band-diagram of MS To understand the purpose of MS 5.7
Semiconductor junction, Schottky diodes, junction and difference between MS and
Junction & Ohmic contacts PN junction.
31-32 Junction Field Effect To understand the structure and working 6.2 – 6.3
Transistors (JFETs), of JFET, MESFET, HEMT and MISFET.
Field Effect MESFET & HEMT
Transistors 33-35 MISFET and MOS To determine MOS C-V behavior and 6.4
structure: Ideal & Real threshold voltage.
36-37 MOS Field Effect To understand MOSFET band diagram, 6.5
Transistor, I-V effective channel mobility, body effect
characteristics and and subthreshold slopes and also to
secondary effects analyze second-order effects.
38-40 Photodiodes, Solar cells, To know about various optoelectronic 8.1, 8.2
Optoelectronic Light Emitting Diodes devices and emerging technologies.
Diodes (LEDs)

5. Learning outcome of the course: Student will understand physics and circuit model of semiconductor material,
junctions and devices. This also enables them to appreciate the functioning of devices and their characteristics in
electronic circuit design and is useful to appreciate other courses related to microelectronics and VLSI area.

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 BIRLA INSTITUTE OF TECHNOLOGY AND SCIENCE, Pilani
Pilani Campus
AUGS/ AGSR Division

6. Evaluation Scheme:
Component Duration Marks Date & Time Evaluation type
(300)
Mid Term Test 90 min 100 12/10 FN1 Open Book
Quizzes 15 min 80 Tutorial hour Closed Book
Comprehensive 3 hrs 120 13/12 FN Closed Book
Exam.

7. Chamber/Online Consultation Hour: To be informed by respective tutorial instructor.

8. Notices: All notices will be put up on NALANDA (LMS-e portal).

9. Make-up Policy: Make-up for mid-sem and comprehensive examination will be considered ONLY in cases of
urgency and IC decision will be final. (NOTE: no make-up will be given for quizzes).

(Prof. Navneet Gupta)

Instructor-in-charge
EEE F214/INSTR F214/ECE F214