3.

CHARACTERISTICS OF TRANSISTOR

Formula:

1) Current Gain in CE mode, = IC /IB =slope

2) Current Gain in CB mode,  =  / 1+
3) Current Gain in CC mode,  = 1/ 1-

Circuit diagram:

VBB and VCC = Power Supply

VBE = Base emitter voltage

VCE = Collector emitter voltage

B = Base, C = collector, E = emitter

IB = Base current

IC = Collector current.

Observations: Input characteristics:

VCE = 1 Volt VCE = 3 Volt

VBE in volts IB in A VBE in volts IB in A
0 0.0 0 0
0.1 0.0 0.1 0
0.2 0.0 0.2 0
0.3 0.0 0.3 0
0.4 0.1 0.4 0
0.5 0.7 0.5 0.6
0.6 10.8 0.6 10.7
0.7 57.7 0.7 60.8
0.8 136.4 0.8 139.8
Output characteristics:

IB = 50 A IB = 75 A
VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)
0 0.00 1.0 3.7 0 0.00 1.0 5.7
0.1 1.67 2.0 3.7 0.1 3.03 2.0 5.7
0.2 2.53 3.0 3.8 0.2 5.3 3.0 5.8
0.3 3.5 4.0 3.8 0.3 5.7 4.0 5.8
0.4 3.7 5.0 3.8 0.4 5.7 5.0 5.8
0.5 3.7 6.0 3.8 0.5 5.7 6.0 5.8
0.6 3.7 7.0 3.8 0.6 5.7 7.0 5.8
0.7 3.7 8.0 3.8 0.7 5.7 8.0 5.8
0.8 3.7 9.0 3.8 0.8 5.7 9.0 5.8
0.9 3.7 10.0 3.8 0.9 5.7 10.0 5.8

3. Transfer Characteristics:

VCE = 1 Volt
IB (A) IC (mA)
0 0.00
10 0.72
20 1.44
30 2.21
40 2.98
50 3.72
60 4.45
70 5.11
80 5.91
90 6.63
100 7.42

1. x-axis: 1unit= 0.1V, y: 20A; Slope=AB/BC; Rin=1/slope V=0.6

2. x: 1V, y: 1mA; IA=75 A, IB=50 A

3. x: 10A, y: 1mA; Slope=AB/BC= 2.93/40 = 73.2= 

Calculation:

Input Resistance Rin =BC/AB= 1/

Rin = BC/AB= 1/slope = 1/0.0732 = 13.66 KΩ

1) =  / 1+ = 73.2/ (1+73.2) = 73.2/74.2 = 0.986

2) = 73.2
3)  = 1/ 1- = 1/ (1-0.986) = 71.4285 = 71.43

Result:

The input, output & transfer characteristics of a given NPN transistor in common emitter are studied and the
estimated values of input resistance, Knee voltage, current gain (,  & γ) are as follows.

VCE= 1volt

Input resistance, Rin= 1/slope = 1/787 = 1.27KΩ

Knee voltage, Vknee=0.6V

VCE= 3 volt

Input resistance, Rin= 1/slope = 1/790 = 1.27KΩ

Knee voltage, Vknee=0.6V

Current gain (CE mode)  = 73.2

(CB mode)  = 73.2/ (1+73.2) = 0.986

(CC mode) γ = 1/ (1-0.986) = 71.43