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SSB1D+(R) Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace, And Other Rugged Applications+2020-01
SSB1D+(R) Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace, And Other Rugged Applications+2020-01
Revised 2020-01
Superseding SSB-1C
RATIONALE
This document is intended to provide guidance for Using Plastic Encapsulated Microcircuits and Semiconductors (PEMs)
in Military, Aerospace, and other rugged applications. This document addesses the various qualification and monitoring
testing of plastic encapsulated microcircuits and discrete semiconductors suitable for potential use in military and aerospace
applications. The users can use this document to evaluate the potential suitability of a PEM product or the manufacturer for
its intended application. SSB-1 Rev D has been updated from SSB-1 Rev C to take into account the comments from various
CE-12 members. The changes from SSB-1 Rev C to SSB-1 Rev D are shown in Appendix A: (informative) Differences
between SSB-1 Rev C and SSB-1 Rev D.
ACKNOWLEDGMENT
Members of Task Groups for Plastic Encapsulated Microcircuits (PEMs) Screening and Lot Acceptance Testing of the SAE
CE-12 Solid State Devices Committee developed this document. We would like to thank them for their dedication to this
effort. To each of them, the members of the SAE CE-12 Solid State Devices Committee extend their gratitude.
INTRODUCTION
The military and aerospace electronics industries are experiencing an ever-increasing demand for the use of plastic
encapsulated microcircuits (PEMs). This trend is the result of two major drivers:
• Acquisition Reform
On June 29, 1994 a government directive challenged DoD and industry to adopt commercial practices and to eliminate
DoD specifications and standards where appropriate. While DoD expects original equipment manufacturers (OEMs) to
continue to meet specific end-item performance requirements, part selection is frequently left to the discretion of the
equipment designer. Largely due to the automotive and commercial aerospace industries, improvements in molding
processes and encapsulants now make PEMs a viable option for military electronics manufacturers to reduce material
costs.
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SAE INTERNATIONAL SSB-1™D Page 2 of 19
Plastic encapsulated microcircuits and semiconductors offer a number of inherent advantages over hermetically sealed
ceramic packages, including:
• Performance Devices have better dielectric properties than ceramic parts; smaller package configurations allow
higher circuit board packing density, therefore, reducing propagation delays
• Unit price Unit prices are lower than ceramic parts because of high volume, high yield, and high quality automated
manufacturing; cost benefits decrease with higher integration levels and pin counts due to the high
price of die
• Availability Devices are more readily available than hermetic devices due to market demand
The uncontrolled use of plastic encapsulated microcircuits and semiconductors can introduce a number of technical risks in
military and aerospace equipment applications that are not associated with hermetic packaged devices. These potential
risks include:
• Electrolytic/galvanic corrosion, delamination, and crack propagation induced by combined effects of temperature
cycling, humidity, and bias conditions
• Device manufacturers characterize electrical performance over limited temperature ranges (e.g., industrial temperature
Range: -40 to +85 °C)
• Cumulative effects of mechanical and thermal stresses from assembly manufacturing, testing, and service conditions
on device long term reliability
To mitigate these risks, the military and aerospace electronics industries are adopting risk mitigation techniques
implemented by the automotive and commercial air electronics industries.
Traditional military part selection methods typically revolve around environmental standards for a general end-item
equipment category. Military standard requirements for components were derived from these equipment level standards.
Many military and aerospace equipment applications do not require component performance at these traditional, military
standard environmental conditions.
Table 1 compares the military standard operating temperature range for microcircuits and semiconductors to other
temperature ranges commonly applied to device characterization.
A recent survey conducted by the Government Electronics and Information Technology Association 1 reveals that many
military and aerospace applications could potentially use commercially available components designed and characterized
to perform over commercial, industrial, or automotive temperature ranges.
Fewer and fewer new products are introduced that are specified to perform to traditional military specification limits and
assembled in hermetic packages. By selecting and evaluating components based on the specific application environment,
original equipment manufacturers are not constrained by military standard requirements that may otherwise impede
selecting the most suitable part for the application from both an equipment performance and economical perspective.
TABLE OF CONTENTS
1. SCOPE .......................................................................................................................................................... 5
3. APPLICATION .............................................................................................................................................. 5
3.1 SSB-1.001: Qualification and Reliability Monitors ........................................................................................ 6
3.2 SSB-1.002: Environmental Tests and Associated Failure Mechanisms ....................................................... 6
3.3 SSB-1.003: Acceleration Factors .................................................................................................................. 6
3.4 SSB-1.004: Failure Rate Estimating ............................................................................................................. 6
3.5 SSB-1.005: Radiation Hardness (in draft)..................................................................................................... 6
3.6 SSB-1.00X: Untitled ...................................................................................................................................... 6
5. NOTES ........................................................................................................................................................ 18
5.1 Revision Indicator........................................................................................................................................ 18
APPENDIX A (INFORMATIVE) DIFFERENCES BETWEEN SSB-1 REV C AND SSB-1 REV D .................................... 19
1 Survey conducted in April 1999 by Task Group G99-03 of the G-12 Solid State Devices Committee.
SAE INTERNATIONAL SSB-1™D Page 4 of 19
1. SCOPE
This Engineering Bulletin and its annexes provide guidance to Original Equipment Manufacturers (OEMs) in evaluating
device manufacturer flows and in selecting cost effective, standard products that meet the performance objective for
potential use in many rugged, military, space, extreme, or other environments.
2. REFERENCE DOCUMENTS
The latest issue of the following documents forms part of this document:
Note: New document or SSB-1 Annex document will be added as it gets developed.
IPC-SM-785 Guidelines for Accelerated Reliability Testing of Surface Mount Solder Joints
AS6294/2 Requirements for Plastic Encapsulated Microcircuits in Military and Avionics Applications
AS6294/4 Requirements for Plastic Encapsulated Discrete Semiconductors in Military and Avionics Applications
3. APPLICATION
This guideline provides guidance in selecting plastic encapsulated microcircuits and semiconductors based upon:
1. Understanding the potential failure mechanisms associated with end use application conditions
2. Understanding a specific device manufacturer’s methodology for improving device reliability by continually evaluating
product against potential failure mechanisms
3. Evaluating device capability versus the specific application environment, circuit function and equipment level reliability
requirements
SAE INTERNATIONAL SSB-1™D Page 6 of 19
The user of this Bulletin and its annexes must determine the suitability of this guideline for a specific application. In addition
to the following SSB-1 annexes, the AS6294/1 through /4 contain requirements for evaluating, screening, and qualification
of plastic encapsulated devices for the intended use. These documents also contain information to consider for long-term
dormant storage.
This annex recommends minimum qualification and monitoring testing of plastic encapsulated microcircuits and discrete
semiconductors suitable for potential use in military and aerospace applications and should be used a guide in evaluating
device manufacturer test flows.
Device manufacturers may use this document as a guide to develop process flows to produce standard product for the
above environments. "Best in Class" suppliers can easily meet these criteria and can readily supply the necessary data to
demonstrate compliance.
This annex does not include all the tests typically included in device qualification and reliability monitoring, but focuses on
those tests specifically designed to apply to (or have unique implications for) plastic encapsulated microcircuits and
semiconductors.
The preferred approach is to select off-the-shelf product that, when evaluated to these guidelines, will meet the target
application requirements without requiring supplementary qualification testing. In cases where design constraints preclude
this preferred approach, this section should also be used to design supplemental device qualification test plans to establish
the required confidence in expected device performance.
This annex provides more detailed information concerning the environmental stresses associated with tests specifically
designed to apply to (or have unique implications for) plastic encapsulated microcircuits and semiconductors, and the
specific failures induced by these environmental stresses. This information is intended to provide further insight needed to
evaluate a specific device manufacturer’s statistical reliability monitoring (SRM) approach.
This annex provides reference information concerning acceleration factors commonly used by device manufacturers to
model failure rates in conjunction with statistical reliability monitoring. These acceleration factors are frequently used by
OEMs in conjunction with physics of failure reliability analysis to assess the suitability of plastic encapsulated microcircuits
and semiconductors for specific end use applications. This information is intended to provide the insight needed to properly
interpret a specific device manufacturer’s reliability data and, in turn, extrapolate performance under service life and storage
conditions for the target application.
This annex provides reference information concerning methods commonly used by the semiconductor industry to estimate
failure rates from accelerated test results. These methods are frequently used by OEMs in conjunction with physics of failure
reliability analysis to assess the suitability of plastic encapsulated microcircuits and semiconductors for specific end use
applications.
This annex provides the framework for hardness assurance risk assessment for electronic parts that would be susceptible
to radiation environment. The document contains the radiation test considerations for total dose, both high dose rate and
low dose rate, displacement damage and single event effects. The definition of an acceptable radiation test report is
provided and a decision process for conducting radiation tests are discussed.
Annexes will be added as they are written and will be included in future updates of SSB-1. For information on additional
annexes consult the SAE International web site.
SAE INTERNATIONAL SSB-1™D Page 7 of 19
4. IMPLEMENTATION GUIDANCE
This section will demonstrate a typical evaluation process using this document and the above annexes, showing how they
are related to each other and how they work together.
The supplier shall have an acceptable documented quality management system in order to be considered for the evaluation
process of this guideline. ISO 9000 and EIA 599 are among the most recognized quality management systems in the
industry. The quality system used shall meet the minimum requirements of 4.1.1, herein. See Figure 1.
ISO 9001 or EIA 599 have the key elements, but the minimum conditions must be verified as implemented on the device
under consideration. Other quality systems may be acceptable if the supplier meets the minimum conditions for the device
under consideration.
The next step is to obtain the reliability summary data from the supplier for the device under consideration. JESD69,
Information Requirements for the Qualification of Silicon Devices, defines the requirements for the component package
which the supplier provides to the customer. This minimum set of data elements includes the results of the supplier’s internal
qualification (i.e., the results of all tests performed to evaluate the quality, reliability, and mechanical performance of a
semiconductor device). To determine if the reliability data is acceptable, the user should:
• Determine if the device under consideration is covered by the data provided, i.e., same package family, technology
family, etc.
• Determine if the data is sufficiently current and represents the product without changes requiring requalification.
JESD47 provides a definition for a qualification family and defines criteria device manufacturers should use to identify
product/process changes requiring requalification.
JESD94 provides a method for developing an application specific reliability evaluation methodology based on the use
conditions the solid state device is expected to experience in the field.
JEP122 provides a list of failure mechanisms and their associated activation energies or acceleration factors that may be
used in making system failure rate estimations when the only available data is based on tests performed at accelerated
stress test conditions.
Tables 2 and 3 show examples of reliability summary data for a microcircuit device and for a semiconductor device.
However, in some circumstances summary data may not be sufficient and it may be necessary to obtain actual sample
sizes. The test conditions, sample sizes, and number of failures data reported in the reliability data will be used for estimating
failure rates as described SSB-1.004.
SAE INTERNATIONAL SSB-1™D Page 8 of 19
Does
Supplier have acceptable
Quality System?
Reference 4.1.1
Yes
Obtain Reliability No
Summary Data
Yearly Summary
Device Failure Rate
Test Conditions Hours Failures (α = 60%)
High Temperature 346126 0 16 FIT
1000 hours at 165 °C
Operating Life Test (Ea = 0.7)
(HTOL) (AF = 170)
Highly Accelerated 130 °C/85% RH/5.5 V 38102 1 5 FIT
Stress Test (HAST) bias, for a minimum of (Ea = 0.9)
128 hours (AF = 10445)
Temperature Cycle 1000 cycles, 464420 0 0.007 FIT
-65 to +150 °C (m = 8.4)
(AF = 12407)
(N = 1 cycle/day)
NOTE: The failure rates shown here reflect the device manufacturer’s use condition assumptions.
• Tu = 70 °C
• RHu = 17.6%
• ΔTu = +70 °C – 0 °C = 70
Refer to SSB-1.004 for further discussion.
SAE INTERNATIONAL SSB-1™D Page 9 of 19
Prior to determining if a device is acceptable for use in a system the environment in which it will be operating must be
defined. The device level use conditions must be derived or flowed-down from the system level requirements. IPC-9701A
includes a summary table of worst-case use environments including categories for military and space applications (see
Table 4). Table 5 is an example of typical environments in a military application. Tables 4 and 5 are for reference only; it is
the responsibility of the user to define the actual or predicted use condition of the selected part. Any derating conditions
used must also be defined. Figure 2 illustrates the process for defining use environments. These conditions will be used for
the calculations of failure rate estimating of SSB-1.004. Section 4.3 describes the calculation process.
SAE INTERNATIONAL SSB-1™D Page 10 of 19
Table 4 - Worst case use environments and appropriate accelerated testing for surface mount electronics by use categories 2 example
2This table was derived from IPC-9701A, Performance Test Methods and Qualification Requirements for Surface Mount Solder Attachments …
supersedes IPC-9701 January 2002.
SAE INTERNATIONAL SSB-1™D Page 11 of 19
Define the anticipated service life of the system and establish the acceptable Mean Time To Failure (MTTF) for the device.
Allocate an acceptable failure rate (λ) to the device and define the acceptable confidence level (α). MTTF is the random
failure rate over the course of the life. Wear out it whether the part can last for the entire service life without hitting end of
life behavior. The SSB1.004 for Failure Rate Estimating have further details along with SSB1.003 for Acceleration Factors.
Define the minimum and maximum temperature extremes the device will experience in storage, shipment and in non-
operating conditions.
Define the maximum operating junction temperature of the device under consideration. It may be necessary to factor in the
effects of heat sinking, cooling, loss of coolant, and other factors, as applicable. Failure rates should be estimated for each
application of the device to account for different operating junction temperatures.
Estimate temperature range(s) and the total number of temperature cycles that the device will experience. This should also
be expressed as a function of time to convert device-cycles to device-hours in order to estimate the sum-of-the-failure-rates
for the device (refer to SSB-1.004 for further discussion).
Determine the relative humidity that the part will experience in its application (storage and operation).
For some applications, it may be appropriate to take into account the operating duty cycle for the purpose of establishing
realistic service life conditions.
SAE INTERNATIONAL SSB-1™D Page 12 of 19
Obtain
Sub-System Level
Use Conditions
Establish
Service Life confidence (α)
(MTBF) for failure rate
(λ) estimates
Derive
MTTF (1/λ) for
each device
Derive Junction
Temperature
Temperatures
(Operating &
(Tu) for each
Storage) device
Derive
part ambient
temperature
range (∆T)
Derive part
Relative
ambient relative
Humidity humidity (RHu)
Document
Device Level Use
Conditions
Using the information obtained from the reliability summary data of 4.1 and the device use conditions of 4.2 the overall
failure rate can be estimated. Figure 3 illustrates the process of evaluation of device acceptability.
The first step is to determine which reliability models are required for the particular application. This may include all, or just
one or two that are key to the application. Follow the flow chart of Figure 3 from left to right. The left column indicates where
Inputs are required for the models from either the summary reliability data (see 4.1), and from the device level use conditions
document (see 4.1 and 4.2). The center models indicate the variables to the calculation with reference to where the
information can be obtained.
A complete failure rate estimate would, of course, include other factors (e.g., derating, assembly manufacturing process,
etc.) in addition to the cumulative failure rates for all components (refer to SSB-1.004 for further discussion). For the purpose
of this guideline, however, we will confine our discussion to device level failure rate calculations. Table 6 identifies the use
condition and reliability summary attributes used for estimating failure rates.
For some applications performing this estimate for each device may not be practical. In some cases, applying a minimum
acceptable threshold for a technology may be an alternate method.
Ea – Obtained from either SSB1-003 for a specific failure mechanism, or as an overall pessimistic number to cover most of
the concerned failure mechanism. For a typical rectifier (1)
TU – Obtained from the device level use conditions. For a typical rectifier - (55)
a - Confidence level from device level use conditions document. Typical is either 60 or 90. For 90 = with n = 0 the chi-square
is (4.605)
Typical rectifier would be rated 1000 V, Use 50% derated at 500 V. This would have a
Vs of (.1856)
FIT = 0.282
Reliability Summary
Information Data Information from
obtained in QC Use Conditions
System Evaluation (Fig. 2)
Section (Fig. 1)
(SEE SSB-1.004)
TU - TJ USE CONDITION (Fig. 2)
NVM Data Tt - TJ TEST CONDITION FROM SSB-1.001 RELIABILITY
Retention SUMMARY DATA (Table 1)
Summary data from T - TOTAL DEVICE HOURS (SAMPLE SIZE X TOTAL
SSB-1.001 TEST TIME) - From SSB-1.001 RELIABILITY SUMMARY
(Table 3) DATA (Table 1)
n - NUMBER OF FAILURES - From SSB-1.001
RELIABILITY SUMMARY DATA (table 1)
a - CONFIDENCE LEVEL (See SSB-1.004)(Fig. 2)
4.4 Evaluation
It will be necessary to evaluate the results of the calculations in 4.3 (see Figure 4). There will be two cases that will arise:
one is that the FIT number meets the desired targets determined in 4.2 and two is that it does not.
There are two reasons that this may be the case. The first reason is that there is insufficient number of device hours to meet
the expected FIT.
It can be easily determined if the number of device hour cannot support the expected FIT. To determine this, recalculate
the model with a zero failure rate. If the results are higher than the desired FIT, you do not have enough device hours.
The only solution to this is to contact the supplier and obtain additional reliability summary data if available. There are a
couple of reasons that they may have more information. They may have done additional monitor tests. Most companies do
this quarterly, as in the example in Table 2. The last quarter recorded was Q3 of 1999. At the time of your evaluation they
may have completed Q4 of 1999 along with Q1 of 2000; this may be enough additional data to support the desired FIT. You
may also inquire if they have any qualification data. If the supplier is a typical automotive supplier, the standard qualifications
for most step stress tests are 3 lots of 77. This would be an additional 231000 device hours per qualification.
In the event that no additional device hours can be obtained from the supplier a decision must be made to either look
elsewhere for a suitable supplier, or to perform additional tests. In the event of choosing the later a reverse model calculation
is provided in SSB1.004 to determine what sample size and device hours would be needed to meet a desired FIT.
In the case that the device hours are sufficient, but the results do not meet desired expectations a decision must be made
either to look for a different supplier, or to mitigate the risk by reducing stress conditions.
Using the example in 4.3.1, if the Tuse was 100 instead of 55, and the desired FIT was determined to be <1, then the model
with zero failure would result in a FIT of 20, indicating that you would need an additional 10260000 device hours with zero
failures to meet the expectation of 1 FIT.
Using the example in 4.3.1, if the failure n was 4 instead of zero, and the Vuse was 800 V instead of 500 V, the result would
be a FIT of 4. If the desired FIT was determined to be <1, then the device reliability does not meet expectation. A check of
the device hours given the same conditions with zero failures would result in a FIT of 0.88, so there are sufficient hours to
meet the desired FIT. The conclusion in this case, is that with the conditions given, the device will not perform to
expectations. As we pointed out earlier, you can reduce the risk by reducing the stress conditions. In the above example,
reducing the Vuse back to 500 V in this case, with a failure rate of 4, would result in a FIT of 0.98 meeting the desired
FIT of 1.
SAE INTERNATIONAL SSB-1™D Page 17 of 19
CONTINUED
FROM
Fig. 3
Yes
No
No
Figure 4 - Evaluation
SAE INTERNATIONAL SSB-1™D Page 18 of 19
5. NOTES
A change bar (l) located in the left margin is for the convenience of the user in locating areas where technical revisions, not
editorial changes, have been made to the previous issue of this document. An (R) symbol to the left of the document title
indicates a complete revision of the document, including technical revisions. Change bars and (R) are not used in original
publications, nor in documents that contain editorial changes only.
This table briefly describes most of the changes made in this standard SSB-1 rev D, compared to its predecessor, SSB-1
rev C (August 2000). Some minor editorial changes like punctuation changes are not included.