TAM_GDM_00031_Gate Driver Module That Bring Out the Performance of Mitsubishi SiC Module

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Gate driver module that bring out the performance of

Mitsubishi Electric SiC Power Module

Rev 0
TAM-GDM-00031 Issued on 1st Dec ‘21 Unit division HQ Japan Your One and Only Company
Copyright © 2021 All Rights Reserved.
Index
1) Solution Guide for SiC Power Module
1-1 Application
1-2 Features of Gate driver module.
1-3 Product line-up
1-4 Evaluation board

2) Introduction of One Tamura

Appendix) Contact person

2
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-1. Application
Inverter PV

Motor
WIND
Controller

Grid
Robotics
/SVG

Welding Storage

EV charger
UPS
EV stand

3
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.

Features of All-SiC Power Module

Feature① Short circuit tolerance is lower than Si

Feature② Low threshold voltage VGS (th)(1V~3V)

Feature③ VGS(+) :On resistance does not decrease at 15V


VGS(−) :Low tolerance(Less than −5V)

Feature④ dV/dt can be set high

Feature⑤ High frequency operation is possible

4
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
・Wide band gap
Feature ① Short circuit tolerance Small chip
・High breakdown voltage
is lower than Si area ・High temperature operation

Support with a gate driver ・・・ Short-circuit mask time (tsc) adjustment function
SiC power module(1200V 300A) IGBT power module (1200V 300A)
Waveform with shorted load Waveform with shorted load
Load:170nH Load:170nH

VGS : 15V/div
VGE : 15V/div

VDS : 200V/div

VCE : 200V/div

ID : 500A/div IC : 500A/div

tsc=1.5us tsc=5.0us
t:800ns/div t:800ns/div

Adjustable with external


Optimal value of SiC:1.0~3.0us capacitor capacity Optimal value of IGBT:3.0~7.0us

5
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Feature② Low threshold voltage VGS (th) IGBT is Beware of malfunctions
(1V~3V) 6V~7V from IGBT

Support with a gate driver ・・・Reduction of parasitic capacitance and Miller clamp circuit
Reduction of parasitic capacitance Miller clamp circuit
dV/dt
2DMBxxxxxxCC
2DD VCC
(DC/DC)
No malfunction
VOHx
at high dV/dt
Driver Timing
VOLx
Controller

contr ol MCLx
block
Driver
COMx

Inoise
Inoise=Cstray X VEE

dV/dt

VGSL
No malfunctions ! Vds
VDS
VGSH
No malfunctions
ID
Vgs
VGS
VDS

6
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Feature③ VGS(+) :On resistance does not decrease at 15V IGBT’s Gate driver cannot
VGS(−) :Low tolerance(Less than −5V) be used

Support with a gate driver ・・・Constant voltage control of VGS

Input voltage:13V~28V Output voltage(etc.):+18V、−3V

+18V
repression VO(+)
VO1+

Rd
COM
COM1
VIN(+)
VIN+
VO(−) −3V
Dz
VO1-

Step-down OVP OTP


Circuit

VIN(−)
VIN-
Main
Control
VGS(+)
VO2+
+18V
Rd
COM
COM2

OCP Dz
VGS(−)
VO2-

−3V

Controls the gate voltage to be constant even for input fluctuations Improved SiC reliability
The gate voltage is constant even for output fluctuations Low loss operation
(SW frequency, QG of power module)

7
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Turn-on: Recovery current is small
Feature④ dV/dt can be set high Turn-off: No tail current
Support with a gate driver ・・・Ability to suppress surge voltage with high dV/dt
(Soft turn-off, Active clamp)
Soft turn-off Active clamp (Option)
2DMBxxxxxxCC

DESATx
Soft turn-off VOHx DESATx
Operates when VOLx VOHx
STOx
short-circuited VOLx
COMx STOx
ACLx
COMx

Active Clamp gate


Surge voltage
suppression VGS
Vge

VCE Surge voltage


suppression
Surge clamp
VDS
Vce
VGE

IDIc
IC

8
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Feature⑤ High frequency operation is possible Drive power needs to be increased

Support with a gate driver ・・・Output capacity considering SiC power module
220
200
Frequency (KHz)

ID=120A

180
1200V
160 120A ID=604A
140
VDS=1080V
120
100 1200V
600A
80
60
40
Gate driver derating curve
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
QG(uC)

SiC 1200V
IGBT
1700V
300A 1800A 9
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-3. Product Line-up

Gate Driver Module 2CG-B series


MODEL
2CG010BBC11N 2CG010BBC12N 2CG010BBC13N 2CG010BBC14N 2CG010BBC1xN * 2CG010BBC1xN *
Output voltage(+) +15V +15V +18V +18V +15V +15V
Output voltage(-) -10V -15V -4V -2V -5V -4V

Output Output power/1ch 3.8W 3.3W 3.5W 3.2W 3.2W 3.0W


Number of output 2
Peak output
current
±43A

Input voltage DC13~28V


Input
Logic input voltage DC3.3~5V
Withstand voltage Primary to secondary AC5KV / Secondary to secondary AC4KV
Insulation Partial discharge
extinction voltage
1768V peak

Mode select Direct mode / Half bridge mode


DESAT protection Yes
Function Soft turn off Yes
Active clamp No
Miller clamp Yes

* Under development
10
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-4. Evaluation board

Gate
drive

DC-DC
converter

Gate
drive
Gate Driver Module Evaluation board
2CG-B series for 2CG-B series
ID Part No 2CG-B series Evaluation board
VDS=1200V
* *
300 FMF300BXZ-24B
FMF400BX-24B
2CG010BBC11N
2CG010BBC12N
*1
*2
400 2CG010BBC13N
FMF400BXZ-24B *1
600 FMF600DXZ-24B 2CG010BBC14N *3
FMF800DX-24B 2CG010BBC1xN *2
800
FMF800DXZ-24B
1200 FMF1200DXZ-24B
* * VDS=1700V
*3
300 FMF300DXZ-34B
*1: It is necessary to branch the lead wire of the gate signal from the evaluation board.
*2: A connection board with the SiC power module is required.
*3: A lead wire with a connector is required. 11
Copyright © 2021 All Rights Reserved.
Index
1) Solution Guide for SiC Power Module
1-1 Application
1-2 Features of Gate driver module.
1-3 Product line-up
1-4 Evaluation board

2) Introduction of One Tamura

Appendix) Contact person

12
Copyright © 2021 All Rights Reserved.
2. Introduction of One Tamura (General application)
Power electronics technology and main products Gate driver
Circuit technology
Device Module
technology technology
Novel Crystal Technology, Inc. Current sensor
Ga2O3

Gate Driver Unit

Power electronics technology


Soldering Passive
technology and main products
components
Reactor
Reflow soldering Automotive Trans
system reactor Coil

Large reactor/ transformer


Electric Chemicals
Soldering material
Die attach material
TIM material Toroidal coil SW-Trans

Reactor for PF
(2 in 1)
13
Copyright © 2021 All Rights Reserved.
Appendix) Information & Contact
Please visit our website!

WEB

Tamura Gate Driver

・Let's know more TAMURA products


Special movie
Presentation of conference
・Easy Get the essential
Matching data with power module
3D data to design!
・One-click to purchase
from the check stock!

Feel free to inquire! ↓


https://www.tamuracorp.com/electronics/en/contact/
14
Copyright © 2021 All Rights Reserved.

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