Professional Documents
Culture Documents
TAM_GDM_00031_Gate Driver Module That Bring Out the Performance of Mitsubishi SiC Module
TAM_GDM_00031_Gate Driver Module That Bring Out the Performance of Mitsubishi SiC Module
TAM_GDM_00031_Gate Driver Module That Bring Out the Performance of Mitsubishi SiC Module
Rev 0
TAM-GDM-00031 Issued on 1st Dec ‘21 Unit division HQ Japan Your One and Only Company
Copyright © 2021 All Rights Reserved.
Index
1) Solution Guide for SiC Power Module
1-1 Application
1-2 Features of Gate driver module.
1-3 Product line-up
1-4 Evaluation board
2
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-1. Application
Inverter PV
Motor
WIND
Controller
Grid
Robotics
/SVG
Welding Storage
EV charger
UPS
EV stand
3
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
4
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
・Wide band gap
Feature ① Short circuit tolerance Small chip
・High breakdown voltage
is lower than Si area ・High temperature operation
Support with a gate driver ・・・ Short-circuit mask time (tsc) adjustment function
SiC power module(1200V 300A) IGBT power module (1200V 300A)
Waveform with shorted load Waveform with shorted load
Load:170nH Load:170nH
VGS : 15V/div
VGE : 15V/div
VDS : 200V/div
VCE : 200V/div
ID : 500A/div IC : 500A/div
tsc=1.5us tsc=5.0us
t:800ns/div t:800ns/div
5
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Feature② Low threshold voltage VGS (th) IGBT is Beware of malfunctions
(1V~3V) 6V~7V from IGBT
Support with a gate driver ・・・Reduction of parasitic capacitance and Miller clamp circuit
Reduction of parasitic capacitance Miller clamp circuit
dV/dt
2DMBxxxxxxCC
2DD VCC
(DC/DC)
No malfunction
VOHx
at high dV/dt
Driver Timing
VOLx
Controller
contr ol MCLx
block
Driver
COMx
Inoise
Inoise=Cstray X VEE
dV/dt
VGSL
No malfunctions ! Vds
VDS
VGSH
No malfunctions
ID
Vgs
VGS
VDS
6
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Feature③ VGS(+) :On resistance does not decrease at 15V IGBT’s Gate driver cannot
VGS(−) :Low tolerance(Less than −5V) be used
+18V
repression VO(+)
VO1+
Rd
COM
COM1
VIN(+)
VIN+
VO(−) −3V
Dz
VO1-
VIN(−)
VIN-
Main
Control
VGS(+)
VO2+
+18V
Rd
COM
COM2
OCP Dz
VGS(−)
VO2-
−3V
Controls the gate voltage to be constant even for input fluctuations Improved SiC reliability
The gate voltage is constant even for output fluctuations Low loss operation
(SW frequency, QG of power module)
7
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Turn-on: Recovery current is small
Feature④ dV/dt can be set high Turn-off: No tail current
Support with a gate driver ・・・Ability to suppress surge voltage with high dV/dt
(Soft turn-off, Active clamp)
Soft turn-off Active clamp (Option)
2DMBxxxxxxCC
DESATx
Soft turn-off VOHx DESATx
Operates when VOLx VOHx
STOx
short-circuited VOLx
COMx STOx
ACLx
COMx
IDIc
IC
8
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-2. Features of Gate driver module.
Feature⑤ High frequency operation is possible Drive power needs to be increased
Support with a gate driver ・・・Output capacity considering SiC power module
220
200
Frequency (KHz)
ID=120A
180
1200V
160 120A ID=604A
140
VDS=1080V
120
100 1200V
600A
80
60
40
Gate driver derating curve
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
QG(uC)
SiC 1200V
IGBT
1700V
300A 1800A 9
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-3. Product Line-up
* Under development
10
Copyright © 2021 All Rights Reserved.
1. Solution Guide for SiC Power Module
1-4. Evaluation board
Gate
drive
DC-DC
converter
Gate
drive
Gate Driver Module Evaluation board
2CG-B series for 2CG-B series
ID Part No 2CG-B series Evaluation board
VDS=1200V
* *
300 FMF300BXZ-24B
FMF400BX-24B
2CG010BBC11N
2CG010BBC12N
*1
*2
400 2CG010BBC13N
FMF400BXZ-24B *1
600 FMF600DXZ-24B 2CG010BBC14N *3
FMF800DX-24B 2CG010BBC1xN *2
800
FMF800DXZ-24B
1200 FMF1200DXZ-24B
* * VDS=1700V
*3
300 FMF300DXZ-34B
*1: It is necessary to branch the lead wire of the gate signal from the evaluation board.
*2: A connection board with the SiC power module is required.
*3: A lead wire with a connector is required. 11
Copyright © 2021 All Rights Reserved.
Index
1) Solution Guide for SiC Power Module
1-1 Application
1-2 Features of Gate driver module.
1-3 Product line-up
1-4 Evaluation board
12
Copyright © 2021 All Rights Reserved.
2. Introduction of One Tamura (General application)
Power electronics technology and main products Gate driver
Circuit technology
Device Module
technology technology
Novel Crystal Technology, Inc. Current sensor
Ga2O3
Reactor for PF
(2 in 1)
13
Copyright © 2021 All Rights Reserved.
Appendix) Information & Contact
Please visit our website!
WEB