QM3098M6

N-Channel 30V Fast Switching MOSFET

General Description Product Summary

The QM3098M6 is the highest performance

trench N-channel MOSFET with extreme high RDSON ID
BVDSS
cell density , which provide excellent RDSON (VGS=10V) (TC=25℃)
and gate charge for most of the synchronous 30V 3mΩ 128A
buck converter applications .
The QM3098M6 meet the RoHS and Green Applications
Product requirement , 100% EAS guaranteed High Frequency Point-of-Load Synchronous
with full function reliability approved. Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features Load Switch
Advanced high cell density Trench technology
PRPAK5X6 Pin Configuration
Super Low Gate Charge
Excellent CdV/dt effect decline
D
100% EAS Guaranteed
Green Device Available

Absolute Maximum Ratings

S S S G
Rating
Symbol Parameter Units
t≦10s Steady State
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
1
ID@TC=25℃ Continuous Drain Current, VGS @ 10V 128 A
1
ID@TC=100℃ Continuous Drain Current, VGS @ 10V 81 A
1
ID@TA=25℃ Continuous Drain Current, VGS @ 10V 37 20 A
1
ID@TA=70℃ Continuous Drain Current, VGS @ 10V 30 16 A
2
IDM Pulsed Drain Current 230 A
3
EAS Single Pulse Avalanche Energy 195.3 mJ
IAS Avalanche Current 62.5 A
4
PD@TC=25℃ Total Power Dissipation 78 W
4
PD@TA=25℃ Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

1
RθJA Thermal Resistance Junction-Ambient --- 62 ℃/W
1
RθJA Thermal Resistance Junction-Ambient (t≦10s) --- 18.7 ℃/W
1
RθJC Thermal Resistance Junction-Case --- 1.6 ℃/W

1 Rev B.02 D022417

 QM3098M6
N-Channel 30V Fast Switching MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃

2 VGS=10V , ID=30A --- 2.4 3

RDS(ON) Static Drain-Source On-Resistance mΩ
VGS=4.5V , ID=15A --- 3.2 4
VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V
VGS=VDS , ID =250uA
△VGS(th) VGS(th) Temperature Coefficient --- -5.5 --- mV/℃
VDS=24V , VGS=0V , TJ=25℃ --- --- 1
IDSS Drain-Source Leakage Current uA
VDS=24V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=30A --- 57.7 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.3 --- Ω
Qg Total Gate Charge (4.5V) --- 25.6 ---
Qgs Gate-Source Charge VDS=15V , VGS=4.5V , ID=15A --- 7.3 --- nC
Qgd Gate-Drain Charge --- 10.6 ---
Td(on) Turn-On Delay Time --- 13.3 ---
Tr Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 47.4 ---
ns
Td(off) Turn-Off Delay Time ID=15A --- 54.4 ---
Tf Fall Time --- 17.4 ---
Ciss Input Capacitance --- 2780 ---
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- 439 --- pF
Crss Reverse Transfer Capacitance --- 372 ---

Symbol Parameter Conditions Min. Typ. Max. Unit

5
EAS Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=44.2A 97.7 --- --- mJ

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

1,6
IS Continuous Source Current --- --- 128 A
2,6
VG=VD=0V , Force Current
ISM Pulsed Source Current --- --- 230 A
2
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
Trr Reverse Recovery Time --- 13.5 --- nS
IF=30A , dI/dt=100A/µs , TJ=25℃
Qrr Reverse Recovery Charge --- 2.1 --- nC

Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH.
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

2 Rev B.02 D022417

 QM3098M6
N-Channel 30V Fast Switching MOSFET
Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source

Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

3 Rev B.02 D022417

 QM3098M6
N-Channel 30V Fast Switching MOSFET

Fig.7 Capacitance Fig.8 Safe Operating Area

1
Normalized Thermal Response (RθJC)

DUTY=0.5

0.2

0.1 0.1
0.05
0.02
0.01 P DM T ON
0.01 SINGLE T

D = TON/T
TJpeak = TC+P DMXRθJC

0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

4 Rev B.02 D022417

 QM3098M6
N-Channel 30V Fast Switching MOSFET

Fig.12 Unclamped Inductive Switching Test Circuit & Waveforms

5 Rev B.02 D022417

 QM3098M6
N-Channel 30V Fast Switching MOSFET
Top Marking

PRPAK5X6 Package Outline Drawing

6 Rev B.02 D022417