IGBT

Highspeed5FASTIGBTinTRENCHSTOPTM5technology

IGW50N65F5
650VIGBThighspeedswitchingseriesfifthgeneration

Datasheet

IndustrialPowerControl
 IGW50N65F5
Highspeedswitchingseriesfifthgeneration

Highspeed5FASTIGBTinTRENCHSTOPTM5technology

FeaturesandBenefits: C
HighspeedF5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•650Vbreakdownvoltage
•LowQg G
•IdealfitwithSICSchottkyDiodeinboostconverters E
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters 1
2
3
Packagepindefinition:

•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IGW50N65F5 650V 50A 1.6V 175°C G50F655 PG-TO247-3

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Highspeedswitchingseriesfifthgeneration

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

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Highspeedswitchingseriesfifthgeneration

Maximumratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IC 80.0 A
TC=100°C 56.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 150.0 A
Gate-emitter voltage ±20
VGE V
TransientGate-emittervoltage(tp=10µs,D<0.010) ±30
PowerdissipationTC=25°C 305.0
Ptot W
PowerdissipationTC=100°C 145.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.50 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=50.0A
Tvj=25°C - 1.60 2.10
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 1.80 -
Tvj=175°C - 1.90 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40.0 µA
Tvj=175°C - - 2000.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S

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Highspeedswitchingseriesfifthgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 3000 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 50 - pF
Reverse transfer capacitance Cres - 11 -
VCC=520V,IC=50.0A,
Gate charge QG - 120.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad,atTvj=25°C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic
Turn-on delay time td(on) Tvj=25°C, - 21 - ns
Rise time tr VCC=400V,IC=25.0A, - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH, - 175 - ns
Fall time tf Cσ=30pF - 18 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.49 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.16 - mJ
Total switching energy Ets - 0.65 - mJ

Turn-on delay time td(on) Tvj=25°C, - 19 - ns

Rise time tr VCC=400V,IC=6.0A, - 4 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH, - 195 - ns
Fall time tf Cσ=30pF - 10 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.11 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.04 - mJ
Total switching energy Ets - 0.15 - mJ

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Highspeedswitchingseriesfifthgeneration

SwitchingCharacteristic,InductiveLoad,atTvj=150°C
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic
Turn-on delay time td(on) Tvj=150°C, - 20 - ns
Rise time tr VCC=400V,IC=25.0A, - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH, - 202 - ns
Fall time tf Cσ=30pF - 3 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.68 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.21 - mJ
Total switching energy Ets - 0.89 - mJ

Turn-on delay time td(on) Tvj=150°C, - 18 - ns

Rise time tr VCC=400V,IC=6.0A, - 5 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=12.0Ω,Lσ=30nH, - 245 - ns
Fall time tf Cσ=30pF - 12 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.18 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.06 - mJ
Total switching energy Ets - 0.24 - mJ

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 IGW50N65F5
Highspeedswitchingseriesfifthgeneration

300

100 270

240
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
210

10 180
tp=1µs

10µs 150
50µs
120
100µs
1 200µs 90

500µs
60
DC
30

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofcase
(D=0,TC=25°C,Tvj≤175°C;VGE=15V. temperature
RecommendeduseatVGE≥7.5V) (Tvj≤175°C)

90 150

80 135

120
70 VGE=20V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

105 18V
60
15V
90
50 12V

75 10V
40
8V
60

30 7V
45
6V
20
30 5V

10 15

0 0
25 50 75 100 125 150 175 0 1 2 3 4 5
TC,CASETEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase Figure 4. Typicaloutputcharacteristic
temperature (Tvj=25°C)
(VGE≥15V,Tvj≤175°C)

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Highspeedswitchingseriesfifthgeneration

150 150
Tj=25°C
140 Tj=150°C
135
130

120 120
VGE=20V
110
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
105 18V
100
15V
90 90
12V
80
75 10V
70
8V
60 60
7V 50
45
6V 40

30 5V 30

20
15
10

0 0
0 1 2 3 4 5 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tvj=150°C) (VCE=20V)

2.50 1000
IC=12,5A td(off)
IC=25A tf
2.25 IC=50A td(on)
VCEsat,COLLECTOR-EMITTERSATURATION[V]

tr

2.00
t,SWITCHINGTIMES[ns]

100
1.75

1.50

1.25
10

1.00

0.75

0.50 1
0 25 50 75 100 125 150 175 0 30 60 90 120 150
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
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 IGW50N65F5
Highspeedswitchingseriesfifthgeneration

1000
td(off) td(off)
1000 tf tf
td(on) td(on)
tr tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100
100

10
10

1 1
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
rG,GATERESISTOR[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistor junctiontemperature
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,VCE=400V,VGE=15/0V,
VGE=15/0V,IC=25A,Dynamictestcircuitin IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E) Figure E)

6.0 11
typ. Eoff
min. 10 Eon
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

5.5
max. Ets

9
E,SWITCHINGENERGYLOSSES[mJ]

5.0

8
4.5
7
4.0
6
3.5
5
3.0
4
2.5
3

2.0
2

1.5 1

1.0 0
0 25 50 75 100 125 150 0 30 60 90 120 150
Tvj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0.5mA) (inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
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Highspeedswitchingseriesfifthgeneration

2.50 1.0
Eoff Eoff
Eon Eon
2.25 0.9
Ets Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2.00 0.8

1.75 0.7

1.50 0.6

1.25 0.5

1.00 0.4

0.75 0.3

0.50 0.2

0.25 0.1

0.00 0.0
5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175
rG,GATERESISTOR[Ω] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor functionofjunctiontemperature
(inductiveload,Tvj=150°C,VCE=400V, (inductiveload,VCE=400V,VGE=15/0V,
VGE=15/0V,IC=25A,Dynamictestcircuitin IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E) Figure E)

1.2 16
Eoff 130V
Eon 520V
Ets 14
1.0
E,SWITCHINGENERGYLOSSES[mJ]

VGE,GATE-EMITTERVOLTAGE[V]

12

0.8
10

0.6 8

6
0.4

0.2
2

0.0 0
200 250 300 350 400 450 500 0 20 40 60 80 100 120
VCE,COLLECTOR-EMITTERVOLTAGE[V] QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=50A)
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
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Highspeedswitchingseriesfifthgeneration

1
Ciss
1E+4 Coss

Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
Crss

D=0.5
0.2
1000
0.1
C,CAPACITANCE[pF]

0.1
0.05
0.02
0.01
100 single pulse

0.01

10

i: 1 2 3
ri[K/W]: 0.1621884 0.2278266 0.109985
τi[s]: 8.6E-4 0.01112208 0.09568113

1 0.001
0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
VCE,COLLECTOR-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. IGBTtransientthermalresistance
collector-emittervoltage (D=tp/T)
(VGE=0V,f=1MHz)

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 IGW50N65F5
Highspeedswitchingseriesfifthgeneration

PG-TO247-3

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RevisionHistory
IGW50N65F5

Revision:2012-11-09,Rev.1.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary data sheet

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Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2012InfineonTechnologiesAG
AllRightsReserved.

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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

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Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

14 Rev.1.1,2012-11-09