SKKH 570/18 E

Absolute Maximum Ratings

Symbol Conditions Values Unit
Chip
IT(AV) Tc = 85 °C 570 A
sinus 180°
Tc = 100 °C 435 A
ITRMS continuous operation 1000 A
ITSM Tj = 25 °C 19000 A
10 ms
Tj = 135 °C 15500 A
i2t Tj = 25 °C 1805000 A²s
10 ms
SEMIPACK® 5 Tj = 135 °C 1201250 A²s
VRSM 1900 V
VRRM 1800 V
Thyristor / Diode Modules VDRM 1800 V
(di/dt)cr Tj = 135 °C 250 A/µs
(dv/dt)cr Tj = 135 °C 1000 V/µs
SKKH 570/18 E
Tj -40 ... 135 °C
Module
Features Tstg -40 ... 125 °C
• Heat transfer through aluminium nitride Visol 1 min 3000 V
a.c.; 50 Hz; r.m.s.
ceramic isolated metal baseplate 1s 3600 V
• Precious metal pressure contacts for
high reliability
Characteristics
• Thyristor with amplifying gate
• UL recognized, file no. E 63 532 Symbol Conditions min. typ. max. Unit
Typical Applications* Chip
• AC motor softstarters VT Tj = 25 °C, IT = 1700 A 1.44 V
• Input converters for AC inverter drives VT(TO) Tj = 135 °C 0.78 V
• DC motor control (e.g. for machine rT Tj = 135 °C 0.32 mΩ
tools)
IDD;IRD Tj = 135 °C, VDD = VDRM; VRD = VRRM 225 mA
• Temperature control (e.g. for ovens,
chemical processes) tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs
• Professionals light dimming (studios, tgr VD = 0.67 * VDRM 2 µs
theaters) tq Tj = 135 °C 200 µs
IH Tj = 25 °C 150 500 mA
IL Tj = 25 °C, RG = 33 Ω 300 2000 mA
VGT Tj = 25 °C, d.c. 3 V
IGT Tj = 25 °C, d.c. 200 mA
VGD Tj = 135 °C, d.c. 0.25 V
IGD Tj = 135 °C, d.c. 10 mA
Rth(j-c) per chip 0.069 K/W
continuous DC
per module 0.034 K/W
Rth(j-c) per chip 0.072 K/W
sin. 180°
per module 0.036 K/W
Rth(j-c) per chip 0.077 K/W
rec. 120°
per module 0.038 K/W
Module
Rth(c-s) chip 0.02 K/W
module 0.01 K/W
Ms to heatsink M6 4.25 5.75 Nm
Mt to heatsink M10 10.2 13.8 Nm
a 5 * 9,81 m/s²
w 1400 g

SKKH

© by SEMIKRON Rev. 1 – 09.12.2014 1

SKKH 570/18 E

Fig. 1L: Power dissipation per thyristor vs. on-state Fig. 1R: Power dissipation per thyristor vs. ambient
current temperature

Fig. 2R: Max. power dissipation of one module vs. case

Fig. 2L: Power dissipation of one module vs. rms current
temperature

Fig. 3L: Power dissipation of two modules vs. direct Fig. 3R: Power dissipation of two modules vs. case
current temperature

2 Rev. 1 – 09.12.2014 © by SEMIKRON

SKKH 570/18 E

Fig. 4L: Power dissipation of three modules vs. direct and Fig. 4R: Power dissipation of three modules vs. case
rms current temperature

Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics

Fig. 8: Surge overload current vs. time

© by SEMIKRON Rev. 1 – 09.12.2014 3

SKKH 570/18 E

Fig. 9: Gate trigger characteristics

SKKH

SEMIPACK 5

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

4 Rev. 1 – 09.12.2014 © by SEMIKRON