Professional Documents
Culture Documents
5. 제조공법-3
5. 제조공법-3
}
H+ PAG H+
PAG
H+ PAG H+
PAG Development
H+
PAG H+
PAG
H+ H+
PAG
H+ PAG H+
Acid-catalyzed
reaction of
exposed resist
(post PEB)
PAC PAC
PAC
PAC
PAC
PAC PAC
PAC
PAC
PAC PAC
PAC PAC
PAC PAC
PAC PAC
• Negative Resist
• Positive Resist
• Development Methods
• Resist Development Parameters
Resist Substrate
X X Ö X
Under Incomplete Correct Severe
develop develop develop overdevelop
UV
Exposed resist
Crosslinks
Unexposed resist
Crosslinked
resist
Spray
Vapor Resist Develop- Edge-bead
Load Station Prime Coat Rinse Removal Transfer Station
Vacuum chuck
To vacuum
pump Spindle
connected to
spin motor
Soft Cool Cool Hard
Bake Plate Plate Bake
Puddle
formation Developer
dispenser
• Developer Temperature
• Developer Time
• Developer Volume
• Normality
• Rinse
• Exhaust Flow
• Wafer Chuck
Photoresist
UV light
Resist Mask
HMDS
1. Vapor prime 2. Spin coat 3. Soft bake 4. Align and expose 5. Post-exposure bake
O2
Rejected wafers
Plasma
Strip and clean 8. Develop inspect 7. Hard bake 6. Develop
Rework
Step-and-scan 4×
High power reflection reticle Multilayer
laser coated mirrors
EUV
¼ image
of reticle
Plasma
Target Step-and-scan
material wafer stage
Vacuum chamber
Step-and-scan
reticle stage
Electrostatic
lens system
(4:1 reduction)
Step-and-scan
wafer stage
Vacuum chamber
Electrostatic
lens system
(4:1 reduction)
Reference
plate
Step-and-scan
wafer stage
Vacuum chamber
0.1 nm 1 nm 10 nm 100 nm
Membrane
PSM, OAI
Chemical amplification 1990s 0.35 mm
DUV Stepper
UV
Exposed resist Exposed Crosslinked
Unexposed
resist
O2 plasma
develop
HMDS Silylated
exposed resist
Si Si