ESAC25M-02¢,N,D FUJ] SILICON DIODE__ESAC25M—O4G,N,D_ SPECIFICATION 1. scope This specification provides the ratings and the test requirement for silicon diode 2. OUT VIEW Body surface shall be smooth and free of contanina| - Dimensions are described in K5C 18187 3. IDENTIPI¢ATION Diode shall be marked legibly with'type nane, polarity mark, lot No. 4. RATINGS 4.1 MAXIMUH RATINGS Item simbol Conditions Value Unit repetitive peak reverse vol tage Visos Para Non repetitive peak reverse voltage | Vou [Greer vao 250 usol v Aberage forward current To featyet/2 te='95°C 10 A Non repetitive peak forward current Tsu | 10ms 70 A Operating junction temperature Tj -40 to 125 c Storage temperature range Tste 40 to 125 c 4.2 ELECTRICAL CHARACTERISTICS (Ta=25'° unless otherwise specified) Item ‘simbol Conditions Value Unit Forvard vol tage ve [Ip= 2.5 8 fax 1a v Reverse current Ip Vr= Vers max, 50, ua Reverse recovery time ter | Ip=Ip=0.1 A max, O.4 a Tharmal resistance RthG-c) | Junction to case max. 365 tA 4.3 MECHANICAL CHARACTERISTICS Weight 2.3 e Date [NAME [apenovio| — - Fuji Electric Co,Ltd. rain pe 08-19 | K ASA Al 7 Jevmcrto | 996 F211 Mot ak g - eA “1MS506333 “35 — Eo ee i5. TEST AND INSPECTION Standard test condition : Ta=25°C, 65% Ril unless otherwise specified. Item Conditions Judgement Appearance Inspected with eye and measure Iten 2. or 3, Forward and reverse | Test on the standard conditions Characteristics Item 4, 40.125 each 0.5Shour, Scycles Item 4. leat cycle removing interval minutes. Humidity test 6042 , 95%,500+Shours solder bath methode Solderabi lity 230 +5 T, Ssec. Tr shall be Soldering heat 260°C, 10sec. 1.5mm from the body Life test Te=95 T, rated load, 500+5Shours Lead pull test R.5ke. 10 sec within 250 uA Solderability shal! be more than 95%. Lead bend test A @A-B-A (I cycle ) @A-C-A (1 cycle ) LO 0.5 Ke 3 cycles The lead shall not be broken and loss. NAME fonawn| pernoveD Fuji Electric Co,Ltd. REVISIONS DWN] MS5C6333‘/3 UML6. DERATING wor & \ E40 3 20 = : Sao Se Ambient Temperature (°C) | CHECKED | - os g 333 3 wa | ZL ws5 66 5 Lt, le] M85 83S MMLE. FUJI_SILICON DIODE ‘TYPE: ESAC25M- our _vIEW EEEes Hay Re — By] Dimensions are in millimeter. MARKING connzcrron ft Bb On EET 8U8<—}— Tot submark. (25M <1 are name Pie =) Polarity mark. 02¢ =| vottage class. DATE _|_ NAME [arPnoveo , Fuji Electric Co,Ltd. awn [1986-10-05 |MORT YAMA 2 CHECKED | =: < ress : =| WK5018187 neve Se es ee es ee,