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4_5881889430481931400
4_5881889430481931400
4_5881889430481931400
Faculty of Engineering
Mechatronics Department
Subject: Electronics 1
performenc Lab
e Report
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2
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Circuit Diagram:
Figure 1 Reversed Biased Codition
U2
R1 + -
0.000 A
10kΩ
DC 1e-09mOhm
V
-
D1 U1
0.000
V1 1N4001 DC 10Ohm
20V +
Figure1
1kΩ
DC 1e-09mOhm
V
-
V1 D1 U1
0.000
0V 1N4001 DC 10Ohm
+
Figure2
4
Tabular & Graphical Data:
Forward Bias Condition:
Sr. NO Vin v Vd v Id mA
1 0 0 0
2 0.1 0.989 0.099
3 0.2 1.97 0.198
4 0.3 2.96 0.297
5 0.4 3.95 0.39
6 0.5 4.94 0.49
7 0.6 5.93 0.59
8 0.7 6.92 0.693
9 0.8 7.925 0.791
10 0.9 8.916 0.892
11 1 9.907 0.989
5
Sr. NO Vin v Vd v IduA
1 0 0 0
2 2 -1.998 -0.2
3 4 -3.996 -0.4
4 6 -5.994 -0.59
5 8 -7.992 -0.79
6 10 -9.99 -0.99
7 12 -0.012 -1.199
8 14 -0.014 -1.3
9 16 -0.016 -1.598
10 18 -0.018 -1.798
11 20 -0.02 -1.988
Graph
Plot From the measured data the V-I characteristics of a diode.
Questions:
List important specifications of the diode?
Maximum Recurrent Peak Reverse Voltage 1000V
Maximum RMS Voltage 700V
Maximum DC Blocking Voltage 1000V
Average Forward Current: 1.0A
Peak Forward Surge Current:30A
Maximum Instantaneous Forward Voltage:1.0V
Maximum DC Revevrs Current At Rated DC Blocking Voltage:5.oMA @ 25C
6
What is breakdown voltage?What is the breakdown voltage of diode 1N4001
and 1N4007?
It is the minimum reverse voltage that makes the diode conduct
appreciably in reverse.
What is the forward voltage drop of silicon diode and germanium diode?
For silicon approximately 0.3V,about germanium approximately 0.7V.