1D The Voltaqe trnsfer charmcteiste (v TC)e

analysi
Cuve for a cmos iovex tey nder DC
tht shocos the ree tànship b/w
4s agph
voltge (vin) and the otput Voj4tag
he nput
inver ter. The Cuve ts tyeialy
CUout) ofhe
Wth Vih on Xacis ndout on he
Plb tted
y-acis
Curve for a Cros tnve ter s
his VTC reg ions
tyeicallbË dutde d into frve toon si Stors
both :NMOS ndPMos e
Region O valtage is CVal
otput
ave tume d off-he
he SA Pply vo itage (vp).
to med on and the
is
Eeq0n1' he Nmos VTC Curve
s tuned off. Vouto
PMos tage NMOS f
vol
TheOwtput thresbold..|Prnos. off
NMos Sat
Prros es
Calal to ye NMOS
voltaqe of he
bo NMOs Sat
Cegion3:: To this Pros Sat
Ýned on,
on. n
Nos P10stu
esul
output voItage is mihus NnoSSes
PMoSSat Nnoses
t sueply voltage POSodf
hxeshold Vo itage of o,st
the Ptn0S (Ver)).
Kegion3 is
Da tuis te NM0S tenss toroutpt
tuned off 'ad Ptnos s tunmed on.
is e s t to 3eD,
 Pegion H't Darthis, both Nmo S ond prnos
tune doff . <the output valtaqe s e
ave
ta rhe supply Vaitage.h y
the Curve forthe
Can hd
* oith th's we
Crnos Taverte.sdtd

tonCe is a measue ofHe

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tuinfIms or Cao SS Sec tioo
tesistonce o f ashe
thiceness. St s defned
at of cnì.fm ofhe mateid to
ofthe esisi.nty Shoet
datio matenal.
thickÓesS of t e
hhe character3e afew
tan ce i s acedto
esis
eegate oxi de dopio
Parame te ts the moea
Con Centatons.0esisy
ticKOeSs 0f
Sheet ests tnce
tn ohs e sgtase
esiStnce iS n
domah sheet
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Parometer to
im or tant layes
net'
ticalarly he,
matenas. Pao
used fur joteComectS.
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togie effn

Parasiticdelay
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a
b

a
Da
1)
) ong tont voltage soating:
mesit Simel;fes destn, loises Roder
Coosump tion,
deme it!. Limits Rerfomonce gans,'may not
aderes al soling tehnigues.
) Constant field saling:
shortchannel effects
meit! nitgates tent tronstor
ensures Consis
be haiout
ocnplexity to deslgnonl
Denents Add s in
manutetumig chalenge s
unitom dop ind Po les
achieung
3) Lateral sCalng ' fre hanalit
thip
aent DoCseases
ond perfornonce.
challerqes coithihoresel
Deonentt faces density het dssieton
Power
interconnect esistonce
nd SoluhonS.
besuisnq advanco d
d
 à Sceing'innos FEtSechnoloqy efcss t
the educ ion oe device dmeasiooS t
inpzeve pe fonmon ce and iocrea Se integrtior

Types f i tnosfET
sCalng Techniques in
Technalg:
) eostatvo(tage sColing
supply voltqe .cohi Ire
Adjus ts
mntning tne electhe feld.
) oostant féte sclig electrcfeld
maiots a oostant effetS.
short-channel
to address
3)
Reduces toansistdimesions
tv bootalu to norease densiy.
Ctnos
characte istics ofla
1 h e dynomic
desci be ts behanot
hver te r input sgnls over
sespoose to changern
tne. Pryti
Vàn
t t n t te y
inged 2
avefon

Otpe
tWavefm
Sigo
sl opeS
 eise time (trr Tinetaento, ri'se from

Fatl tme (te) ine taten to fall foum

0.to lo Y.

clby tp ):takg
Hghtolouo Propagtointo So
to fal frm oH
dlehy. (tplw): Tine
Hiýh,' Pro poghan
Loo t fam soto Wo
taken to ise
de lay Cti) (tPn t bpty
Prepapagahion
ofntrct te in put
minimusm tihme fum
Con taminahon delay' Cos5ing So.
So ta The butput
CassYng VLST for the
Crucial n
18) Tronsistor SCling is

follesing îteqttien ensi ty'6t mo

D Dacrea Se
funetoos on a chip.
Sol,trnSsto
)moved petornn e! S ices
mean fas ter de
ansump bon: fnerg9
£oergy
3) Reduce d pouJer
nd bnger las bog
e#Eient
electrunics.
 Lowe r Cost
) Cost -Effectve manefac tuning:
Per Enchun for atfordt bilit
) Contiouous Techno logi Cad Acvon cemenS
Prives óngoi ng mproyerments in somiice
technslogy
tronsistr Soll ng 's essenti
Ta Summay, terhn, im poved
in
fx achetutng hgher f f i ency cost-efRctiie
Per fonance r energy technolagi Cal PDreqs
neSs, an d Con6nous