Preliminary Datasheet

RJH60D2DPP-M0
600V - 12A - IGBT R07DS0160EJ0400
Rev.4.00
Application: Inverter Apr 19, 2012

Features
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 80 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003AF-A

(Package name: TO-220FL)
C

1. Gate
2. Collector
G
3. Emitter

1
2 3
E

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage / diode reverse voltage VCES / VR 600 V
Gate to emitter voltage VGES ±30 V
Collector current Tc = 25°C IC 25 A
Tc = 100°C IC 12 A
Collector peak current ic(peak) Note1 50 A
Collector to emitter diode forward current iDF 12 A
Collector to emitter diode forward peak current iDF(peak) Note1 50 A
Collector dissipation PC Note2 34 W
Junction to case thermal resistance (IGBT) j-c Note2 3.7 °C/W
Junction to case thermal resistance (Diode) j-cd Note2 4.9 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C

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RJH60D2DPP-M0 Preliminary

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown VBR(CES) 600 — — V IC =10 A, VGE = 0
voltage
Zero gate voltage collector current ICES / IR — — 5 A VCE = 600 V, VGE = 0
/ Diode reverse current
Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 4.0 — 6.0 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage VCE(sat) — 1.7 2.2 V IC = 12 A, VGE = 15 V Note3
VCE(sat) — 2.2 — V IC = 25 A, VGE = 15 V Note3
Input capacitance Cies — 430 — pF VCE = 25 V
Output capacitance Coes — 40 — pF VGE = 0
Reveres transfer capacitance Cres — 12 — pF f = 1 MHz
Total gate charge Qg — 19 — nC VGE = 15 V
Gate to emitter charge Qge — 4 — nC VCE = 300 V
Gate to collector charge Qgc — 7 — nC IC = 12 A
Turn-on delay time td(on) — 32 — ns VCC = 300 V
Rise time tr — 13 — ns VGE = 15 V
Turn-off delay time td(off) — 85 — ns IC = 12 A
Fall time tf — 80 — ns Rg = 5 
Inductive load
Turn-on energy Eon — 0.10 — mJ
Turn-off energy Eoff — 0.16 — mJ
Total switching energy Etotal — 0.26 — mJ
Short circuit withstand time tsc 3.0 5.0 — s VCC  360 V, VGE = 15 V

FRD Forward voltage VF — 1.2 1.6 V IF = 12 A Note3

FRD reverse recovery time trr — 100 — ns IF = 12 A
FRD reverse recovery charge Qrr — 0.2 — C diF/dt = 100 A/s
FRD peak reverse recovery current Irr — 5.0 — A
Notes: 3. Pulse test.

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RJH60D2DPP-M0 Preliminary

Main Characteristics

Collector Dissipation vs. Maximum DC Collector Current vs.

Case Temperature Case Temperature
50 30
Collector Dissipation Pc (W)

25

Collector Current IC (A)

40

20
30
15
20
10

10
5

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

Case Temperature Tc (°C) Case Temperature Tc (°C)

Maximum Safe Operation Area Turn-off SOA

100 60
PW
10 = 50
Collector Current IC (A)

Collector Current IC (A)

0μ 10
s μs
10
40

1 30

20
0.1
10
Tc = 25°C
Single pulse
0.01 0
1 10 100 1000 0 200 400 600 800

Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

IGBT Output Characteristics (Typical) IGBT Output Characteristics (Typical)

50 50
Tc = 25°C 12 V Tc = 150°C
Pulse Test Pulse Test
Collector Current IC (A)

Collector Current IC (A)

40 40
15 V 12 V
18 V 15 V
30 10 V 30
18 V
10 V
20 20

VGE = 8 V VGE = 8 V
10 10

0
0 1 2 3 4 5 0 1 2 3 4 5

Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

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RJH60D2DPP-M0 Preliminary

Collector to Emitter Satularion Voltage vs. Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical) Gate to Emitter Voltage (Typical)

VCE(sat) (V)
VCE(sat) (V)

Collector to Emitter Satularion Voltage

5 5
Collector to Emitter Satularion Voltage
Tc = 25°C
Pulse Test
IC = 12 A
4 4
IC = 12 A 25 A

25 A
3 3

2 2
Tc = 150°C
Pulse Test
1 1
4 8 12 16 20 4 8 12 16 20

Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V)

Collector to Emitter Saturation Voltage

Transfer Characteristics (Typical) vs. Case Temparature (Typical)

VCE(sat) (V)
50 Collector to Emitter Saturation Voltage 4.0
VCE = 10 V VGE = 15 V
Pulse Test Pulse Test
3.5
Collector Current IC (A)

40

Tc = 25°C 3.0
150°C
30 IC = 25 A
2.5
20
2.0 12 A

6A
10
1.5

0 1.0
0 4 8 12 16 20 −25 0 25 50 75 100 125 150

Gate to Emitter Voltage VGE (V) Case Temparature Tc (°C)

Gate to Emitter Cutoff Voltage

vs. Case Temparature (Typical) Frequency Characteristics (Typical)
Gate to Emitter Cutoff Voltage VGE(off) (V)

10 8
Collector Current IC(RSM) (A)

8 0
6 Collector current wave
(Square wave)
6 IC = 10 mA

4
4
1 mA
2
2 Tj = 150°C, Tc = 100°C
VCE = 10 V VCE = 300 V, VGE = 15 V
Pulse Test Rg = 5 Ω, duty = 50%
0 0
−25 0 25 50 75 100 125 150 1 10 100 1000

Case Temparature Tc (°C) Frequency f (kHz)

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RJH60D2DPP-M0 Preliminary

Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)

1000 10

Swithing Energy Losses E (mJ)

VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
Switching Times t (ns)

tf
100 td(off) 1

td(on)
Eoff

10 tr 0.1

Eon
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1 0.01
1 10 100 1 10 100

Collector Current IC (A) Collector Current IC (A)

(Inductive load) (Inductive load)

Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4)

1000 1

Swithing Energy Losses E (mJ)

VCC = 300 V, VGE = 15 V
IC = 12 A, Tc = 150°C
Switching Time t (ns)

Eoff
tf

100 0.1 Eon

td(off)

td(on)

VCC = 300 V, VGE = 15 V

tr IC = 12 A, Tc = 150 °C
10 0.01
1 10 100 1 10 100

Gate Resistance Rg (Ω) Gate Registance Rg (Ω)

(Inductive load) (Inductive load)

Switching Characteristics (Typical) (5) Switching Characteristics (Typical) (6)

1000 1
VCC = 300 V, VGE = 15 V
Swithing Energy Losses E (mJ)

IC = 12 A, Rg = 5 Ω
Switching Times t (ns)

Eoff
tf
100 0.1
td(off) Eon

td(on)

tr VCC = 300 V, VGE = 15 V

IC =12 A, Rg = 5 Ω
10 0.01
25 50 75 100 125 150 25 50 75 100 125 150

Case Temperature Tc (°C) Case Temperature Tc (°C)

(Inductive load) (Inductive load)

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RJH60D2DPP-M0 Preliminary

Typical Capacitance vs.

Collector to Emitter Voltage Dynamic Input Characteristics (Typical)

Collector to Emitter Voltage VCE (V)

1000 800 16
VCC = 300 V

Gate to Emitter Voltage VGE (V)

Cies VGE
IC = 12 A
Tc = 25°C
Capacitance C (pF)

600 12
100

400 8
Coes VCE
10
Cres 200 4
VGE = 0 V
f = 1 MHz
Tc = 25°C
1 0 0
0 50 100 150 200 250 300 0 4 8 12 16 20

Collector to Emitter Voltage VCE (V) Gate Charge Qg (nc)

Reverse Recovery Time vs. Reverse Recovery Charge vs.

Diode Current Slope (Typical) Diode Current Slope (Typical)
300 Reverse Recovery Charge Qrr (μC) 1.0
Reverse Recovery Time trr (ns)

VCC = 300 V VCC = 300 V

IF = 12 A IF = 12 A
250
0.8
Tc = 150°C
200
0.6 Tc = 150°C
150
0.4
100
25°C
50 0.2
25°C
0 0
0 40 80 120 160 200 0 40 80 120 160 200

Diode Current Slope diF/dt (A/μs) Diode Current Slope diF/dt (A/μs)

Reverse Recovery Current vs.

Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical)
16 50
Reverse Recovery Current Irr (A)

VCC = 300 V
IF = 12 A Tc = 25°C
Forward Current IF (A)

40
12 150°C

30
Tc = 150°C
8
20

4
25°C 10
VCE = 0 V
Pulse Test
0 0
0 40 80 120 160 200 0 1 2 3 4

Diode Current Slope diF/dt (A/μs) C-E Diode Forward Voltage VCEF (V)

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RJH60D2DPP-M0 Preliminary

Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)

Normalized Transient Thermal Impedance γs (t)

10
Tc = 25°C

D=1
1
0.5

0.2 θj – c(t) = γs (t) • θj – c

0.1 θj – c = 3.7°C/W, Tc = 25°C
0.05
0.1 0.0
2
PDM PW
D=
T
0.01
1 shot pulse PW
T
0.01
100 μ 1m 10 m 100 m 1 10 100
Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width (Diode)

Normalized Transient Thermal Impedance γs (t)

10
Tc = 25°C

D=1
1
0.5

0.2 θj – c(t) = γs (t) • θj – c

0.1 θj – c = 4.9°C/W, Tc = 25°C
0.05
0.1
PDM PW
0.02 D=
0.01 T
1 shot pulse PW
T
0.01
100 μ 1m 10 m 100 m 1 10 100

Pulse Width PW (s)

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RJH60D2DPP-M0 Preliminary

Switching Time Test Circuit Waveform

VGE 90%
Diode clamp

10%
L

IC
90% 90%
D.U.T VCC
Rg

10% 10%

td(off) tf td(on) tr

Diode Reverse Recovery Time Test Circuit Waveform

VCC

IF
D.U.T

L diF/dt trr
IF

Irr
0.5 Irr

Rg 0.9 Irr

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RJH60D2DPP-M0 Preliminary

Package Dimension
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
Unit: mm
TO-220FL ⎯ PRSS0003AF-A TO-220FL 1.5g

10.0 ± 0.3 2.8 ± 0.2

3.0 ± 0.3

6.5 ± 0.3
15.0 ± 0.3

φ 3.2 ± 0.2
3.6 ± 0.3

1.15 ± 0.2
12.5 ± 0.5

1.15 ± 0.2

0.75 ± 0.15

0.40 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2
2.6 ± 0.2

Ordering Information
Orderable Part No. Quantity Shipping Container
RJH60D2DPP-M0#T2 600 pcs Box (Tube)

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Apr 19, 2012
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