你9 AB兩点 potential barrier 的存在会造成Ec ⺠的bending

已 a 电位
相同
7
B
A
⼗
P n
⼀
⼤The amount
of bendingpotential barrier elbi
0
o
A Testpoint
chargecarrier 帶䘂⼦ Q 為何会有bending產⽣
假設 進到Ec無位能差
0000
D Vio UA⼆UB
A Evoooo Ec B 20Assume N B無电位差
價螮已填滿
Eciv EgfxedforSi
A.PH
30 ē
B N 会進入n区的Ec
Explain the originofthe 40 0 P 全進入p区的 Ev
energybandbending sA
at p n Junction 50 YD 20 3040
n
Eci Evp
P 60 於是造成 Ed Ev 由P n
到 的bending
Ev

Ec Ecp n

EU
the Ec

The Ev

Pg.IO p N
D I 本 b
以⼆0 由流的連續性
可選擇計算空乏區 非空乏區油 流 計算非空乏區就好1

Quiz I 20201015
I Explainthe existenceofpotential barrier at the pn junctionofa diode
Ans a Difusionoffree electronstopsideand holes to n side
b Causingexistenceofthe depletion region at thepnjunction
c Using Gauss Law we cancalculatethe electrical field Eatthedepletion
region
d then the E gives
integrate
de voltage distribution at the junction
pn
e Let the maxdīference in voltagebe Ubi The eUbiis the so calledpotentialbarrier