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huayi_hyg017n10ns1ta_apr22_xonlink
huayi_hyg017n10ns1ta_apr22_xonlink
huayi_hyg017n10ns1ta_apr22_xonlink
TOLL
Applications
Tab
Switching application
Power management for inverter systems
Battery management Pin 1
Pin 2,3,4,5,6,7,8
N-Channel MOSFET
Package Code
TA TA:TOLL
G017N10
Date Code
XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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HYG017N10NS1TA
Absolute Maximum Ratings
HYG017N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS= 250μA 100 - - V
VDS=100V,VGS=0V - - 1 μA
IDSS Drain-to-Source Leakage Current
TJ=125°C - - 50 μA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS= 250μA 2 3 4 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
RDS(ON) Drain-Source On-State Resistance VGS= 10V,IDS=100A - 1.6 1.95 mΩ
Diode Characteristics
VSD Diode Forward Voltage ISD=100A,VGS=0V - 0.86 1.2 V
trr Reverse Recovery Time - 154 - ns
ISD=100A,dISD/dt=100A/μs
Qrr Reverse Recovery Charge - 260 - nC
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HYG017N10NS1TA
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
HYG017N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=300KHz - 1.3 - Ω
Ciss Input Capacitance VGS=0V, - 13880 -
Coss Output Capacitance VDS= 25V, - 5260 - pF
Crss Reverse Transfer Capacitance Frequency=300KHz - 408 -
td(ON) Turn-on Delay Time - 50 -
Tr Turn-on Rise Time VDD= 50V,RG=4.0Ω, - 114 -
ns
td(OFF) Turn-off Delay Time IDS= 100A,VGS= 10V - 108 -
Tf Turn-off Fall Time - 132 -
Gate Charge Characteristics
Qg Total Gate Charge - 217 -
Qgs Gate-Source Charge VDS =80V, VGS=10V,IDs=100A - 75 - nC
Qgd Gate-Drain Charge - 47 -
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HYG017N10NS1TA
Typical Operating Characteristics
ID-Drain Current(A)
Tc-Case Temperature(℃) Tc-Case Temperature(℃)
Thermal
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HYG017N10NS1TA
Typical Operating Characteristics(Cont.)
12
VGS-Gate-Source Voltage (V)
C-Capacitance(pF)
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HYG017N10NS1TA
Avalanche Test Circuit
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HYG017N10NS1TA
Device Per Unit
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HYG017N10NS1TA
Carrier Tape
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HYG017N10NS1TA
Classification Profile
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HYG017N10NS1TA
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support:Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com
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