BE-I3(CBS)(R&P) 24843 ELECTRICAL ENGG.—COURSE NO. EEC-302 (Electronic Cireuits-I) Time Allowed—8 Hours. Maximum Marks—100 Note : — Attempt five questions in all, selecting at least two questions from each section. Section A 1. @) Explain the formation of the ‘depletion region’ in an open circuited PN junction. State what do you understand by barrier potential across a PN junction. 10 @) Explain the phenomenon. involved in the breakdown of a PN junction under reverse biased conditions. Distinguish between zener breakdown and avalanche breakdown. 10 2. (@) What is the need of using filters circuits ? Explain the working of the capacitor filter with the help of waveforms. 10 (6) In what respect is an LED different from an ordinary PN junction diode ? State applications of LEDs. 10 [Turn over3. (2) BE-IVSCBSXR&P)—2A783 a) Discuss CE characteristics of a transistor with necessary derivations. 10 ©) Explain the working of collector to base bias circuit. 10 (a) Write short notes on the following : Capacitor filter 5 Gi) Inductor filter. 5 o Explain the working of zener diode as a voltage regulator. 10 Section B a) Discuss depletion type MOSFET with neat diagram, symbol and characteristics. 10 () Explain the construction and operation of n-channel FET. 10 (a) Explain the principle of operation of single stage amplifiers, 10 © Compare LC, DC, RC and transformer coupled amplifiers 10 (a) ) (3) BE-ITACBSyRAP)24793 Discuss the hybrid model for CC configuration with necessary derivations, 10 ‘The following test results were obtained in a CE amplifier circuit while measuring the A-parameters experimentally. (@ With ac output shorted 1, = 20 pA, 1, = 1 mA, Vig = 22 mV &V,, = 0 (i) With nc input open circuited I, = 0, I, = 30 pA, Vee = 0.25 mV AV, HV, Determine the hybrid parameters of given transistor. 10 Write short notes on (any two) : 10x2=20 (a) Comparison between BJT & JFET. (©) H-parameter equivalent circuit (©) Multistage amplifiers.Total No. of Questions—s} (Total No. of Printed Pages—3 BE-IIV3(CBS)(R&P) W793 COMPUTERIL.T. ENGG.—COURSE NO. EEC-301 (Analog Electronics) Time Allowed—3 Hours Maximum Marks—100 Note : — Attempt five questions in all, selecting at least two from each section. All questions carry equal marks. Assume missing data suitably. Section A 1. @) _ What is a PN junction diode ? Explain the behavior of junction in forward bias and reverse bias modes. Draw its volt-ampere characteristics. 10 (6) Explain diode capacitance and static and dynamic resistances. 10 Explain the operation of a bridge reftifier circuit. Also derive its necessary parameters. Give its comparison with centre- tapped full wave and half wave rectifier. 20 (Turn over‘simouresed-y (@) KGL PUR XBL OL @ + Supwonoy oy ureydxa, or “LLEWTT soemsior opgersnipe euyuL9} sory Jo wesselp seUAyDS ay Ure[dxo puE MEG or “dens somod-poyeindaz sajsos v jo Bury ONT UIEIdxT (2) Or sayrdure soysisuesn popdnos somsoysuesy Jo woyrezodo au ‘wesserp ynow9 aiqeans ym wreideg -suogydue {Jo soexs oy Jo samayps Suydnop snouwa ayy axe YM —(q) of Simaureedy Sursn ymax soyydue soysisuesy wv 420} ure aBvyjon “ures quouns 405 suoIssasdNo ayy aaog (0) erercavuxsaoi-ag (6 )or “aiuws Kouonboy yBry (2p Pue ofuex fouanbay mop (1) + METIS soyrTdure podnos oy ue Jo ues ay soop Aya welds { soyydue oBeysyinu e sq ueou nok op yeqA or ‘doyydure soysysuexy v Jo BupyOm ot uTeydxO “ueaBeyp qnos1 yeu YUNA “StayTdue Jo uoBoYIssEP dat @ wors9g or ro}E ANAS SH 40} uOYSssoadxo Ue aap pue ynoUID seIG-J[as e UIEIdXO pue weIG, or G4 quonasd £ayX op Moy PUL symMaxI9 soyydure ppg uF Aemeuns jouuoT st UN “Leg B Jo jujod Supesado OW UE YS 205 SuoseDs om EIS ox sonsuopeseyp osadure-jon si PUE Lad jouMEYD-N, we Jo aanjonays oy ‘suresBeyp ywou Jo djoy ayy qa “ured or -sanano agp Jo sodvys ot uonanyes pue gonna ‘2ane OW AYOIPUT ostsuEs, ayoesvyp rndise 0 JO AUB YOROAS B 404 5 evevetavaxsanem-ad ( % )