MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BCR16PM OUTLINE DRAWING Dimensions

in mm

10.5 MAX
5.2 2.8

1.2
5.0

8.5
17
TYPE
NAME
φ3.2±0.2
VOLTAGE
CLASS
1.3 MAX

3.6
13.5 MIN
0.8

2.54 2.54 0.5 2.6

∗ Measurement point of
• IT (RMS) ...................................................................... 16A

4.5
123 case temperature
• VDRM ..............................................................400V/600V 2
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ✽5 1 T1 TERMINAL
2 T2 TERMINAL
• Viso ........................................................................ 1500V 3 3 GATE TERMINAL
1
• UL Recognized: File No. E80276 TO-220F

APPLICATION
Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment
such as TV sets · refrigerator · washing machine · electric fan,
other general purpose control applications

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
8 12
VDRM Repetitive peak off-state voltage ✽1 400 600 V
VDSM Non-repetitive peak off-state voltage ✽1 500 720 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current Commercial power frequency, sine full wave 360° conduction, Tc=71°C 16 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 160 A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
I2t I2t for fusing 107.5 A2s
current
PGM Peak gate power dissipation 5.0 W
PG (AV) Average gate power dissipation 0.5 W
VGM Peak gate voltage 10 V
IGM Peak gate current 2 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 2.0 g
Viso Isolation voltage Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case 1500 V
✽1. Gate open.

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA
VTM On-state voltage Tc=25°C, ITM=25A, Instantaneous measurement — — 1.5 V
VFGT ! ! — — 1.5 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 1.5 V
VRGT # # — — 1.5 V
IFGT ! ! — — 30 ✽5 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω — — 30 ✽5 mA
IRGT # # — — 30 ✽5 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V
R th (j-c) Thermal resistance Junction to case ✽4 — — 3.0 °C/ W

Critical-rate of rise of off-state

(dv/dt) c ✽3 — — V/µs
commutating voltage

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W.
✽5. High sensitivity (I GT≤20mA) is also available. (IGT item 1)

Voltage VDRM (dv/dt) c Commutating voltage and current waveforms

class (V) Test conditions (inductive load)
Symbol Min. Unit

R —
SUPPLY
1. Junction temperature VOLTAGE TIME
8 400 Tj =125°C
L 10
2. Rate of decay of on-state commutat- MAIN CURRENT (di/dt)c
V/µs ing current TIME
(di/dt)c=–8A/ms
R — MAIN
3. Peak off-state voltage VOLTAGE TIME
12 600
VD =400V (dv/dt)c VD
L 10

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT

103 200
7
SURGE ON-STATE CURRENT (A)

5 180
ON-STATE CURRENT (A)

3 160
2
140
102
7 Tj = 125°C 120
5
3 100
2 Tj = 25°C
80
101
7 60
5
40
3
2 20
100 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 100 2 3 4 5 7 101 2 3 4 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
103
3 TYPICAL EXAMPLE
2 VGM = 10V PG(AV) = 0.5W 7
5
101 PGM = 5W 4
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

3

GATE TRIGGER CURRENT (Tj = t°C)

5 IGM = 2A IRGT III
3 VGT = 1.5V 2
2
102
100 IFGT I, IRGT I
7 7
5 5
3 4
2 3
IFGT I, IRGT I, IRGT III VGD = 0.2V 2
10–1
7
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
GATE TRIGGER VOLTAGE VS. (JUNCTION TO CASE)
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 5.0
7 TYPICAL EXAMPLE
4.5
5
4 4.0
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

3.5
2
3.0
102 2.5
7 2.0
5
4 1.5
3
1.0
2
0.5
101 0
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS MAXIMUM ON-STATE POWER
(JUNCTION TO AMBIENT) DISSIPATION
TRANSIENT THERMAL IMPEDANCE (°C/W)

103 40
ON-STATE POWER DISSIPATION (W)

7 NO FINS
5
3 35
2
102 30 360°
7 CONDUCTION
5
3 25 RESISTIVE,
2 INDUCTIVE
101 20 LOADS
7
5
3 15
2
100 10
7
5
3 5
2
10–1 0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 0 2 4 6 8 10 12 14 16 18 20

CONDUCTION TIME RMS ON-STATE CURRENT (A)

(CYCLES AT 60Hz)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT VS. RMS ON-STATE CURRENT
160 160
CURVES APPLY REGARDLESS NATURAL CONVECTION

AMBIENT TEMPERATURE (°C)

140 OF CONDUCTION ANGLE 140 NO FINS
CASE TEMPERATURE (°C)

CURVES APPLY REGARDLESS

120 120 OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100 100

80 80

60 60
360°
40 CONDUCTION 40
RESISTIVE,
20 INDUCTIVE 20
LOADS
0 0
0 2 4 6 8 10 12 14 16 18 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

100 (%)

CURRENT VS. JUNCTION HOLDING CURRENT VS.

TEMPERATURE JUNCTION TEMPERATURE
105 103
100 (%)

7 TYPICAL EXAMPLE TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5 7
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

5
3 4
2
3
HOLDING CURRENT (Tj = 25°C)

104
HOLDING CURRENT (Tj = t°C)

2
7
5
3 102
2 7
103 5
7 4
5 3
3 2
2
102 101
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

LACHING CURRENT VS. BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 160
100 (%)

7 TYPICAL EXAMPLE
5

,,,,,,,,,,,
DISTRIBUTION T2+, G– 140
LACHING CURRENT (mA)

,,,,,,,,,,,
2 TYPICAL
EXAMPLE 120

,,,,,,,,,,,
BREAKOVER VOLTAGE (Tj = 25°C)

102
BREAKOVER VOLTAGE (Tj = t°C)

,,,,,,,,,,,
7 100
5

,,,,,,,,,,,
3 80

,,,,,,,,,,,
2

,,,,,,,,,,,
60
101

,,,,,,,,,,,
7
5 40
3 T2 , G  TYPICAL
+ +
2  20
T2– , G–  EXAMPLE
100 0
–40 0 40 80 120 160 –60 –40 –20 0 20 40 60 80 100120 140

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

Feb.1999
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

RATE OF RISE OF
OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS
100 (%)

CRITICAL RATE OF RISE OF OFF-STATE

160
TYPICAL EXAMPLE 3 TYPICAL VOLTAGE WAVEFORM

COMMUTATING VOLTAGE (V/µs)

Tj = 125°C 2 EXAMPLE t
140
(dv/dt)C VD
102 Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

120 I QUADRANT 7 IT = 4A CURRENT WAVEFORM

III QUADRANT 5 τ = 500µs (di/dt)C
100 IT
3 VD = 200V
2 f = 3Hz τ t
80 #2
#1 101
7 I QUADRANT
60 5
3 MINIMUM
40 2 CHARAC-
III QUADRANT
20 100 TERISTICS
7 VALUE
0 5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CURRENT VS. GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

GATE CURRENT PULSE WIDTH
103 6Ω 6Ω
100 (%)

TYPICAL EXAMPLE
7
5 IFGT I
4 A A
3 IRGT I 6V 6V
GATE TRIGGER CURRENT (DC)

IRGT III RG RG
GATE TRIGGER CURRENT (tw)

2 V V

102 TEST PROCEDURE 1 TEST PROCEDURE 2

7
5 6Ω
4
3
2
A
6V
V RG
101 0
10 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3

Feb.1999