12

SEMICONDUCTOR DEVICES AND

COMMUNICATION SYSTEM
SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM
Previous Year Questions
1. Draw energy band diagrams of n-type and p-type
semiconductors at temperature T  0 K , depicting the
donor and acceptor energy levels. Mention the
significance of these levels.
[CBSE-55-1-1-(2022)]
2. Write the characteristics of a p-n junction which make it
suitable for rectification.
[CBSE-55-1-1-(2022)]
3. State the working principle of an LED. Write any two
important advantages and two disadvantages of LED.
[CBSE-55-1-1-(2022)]
4. Explain the formation of depletion region in a p-n
junction.
[CBSE-55-2-1-(2022)]
5. How is an emf generated by a solar cell due to the three
basic processes involved? Explain.
[CBSE-55-2-1-(2022)]
6. With the help of a circuit diagram, explain the working
of a p-n junction diode as a full-wave rectifier. Also
draw its input and output waveforms.
[CBSE-55-2-1-(2022)]
7. The British physicist Thomas Young explained the
interference of light using the principle of superposition
of waves. He observed the interference pattern on the
screen, in his experimental set-up, known now as
Young’s double slit experiment. The two slits S1 and
S2 were illuminated by light from a slit S. The
interference pattern consists of dark and bright bands of
light. Such bands are called fringes. The distance
between two consecutive bright and dark fringes is
called fringe width.
(a) If the screen is moved closer to the plane of slits S1
and S2 , then the fringe width :
1
(i) will decrease, but the intensity of bright fringe
remains the same.
(ii) will increase, but the intensity of bright fringe
decreases.
(iii) will decrease, but the intensity of bright fringe
increases.
(iv) and the intensity both remain the same.
(b) What will happen to the pattern on the screen, when
the two slits S1 and S2 are replaced by two independent
but identical sources?
(i) The intensity of pattern will increase
(ii) The intensity of pattern will decrease
(iii) The number of fringes will become double
(iv) No pattern will be observed on the screen
(c) Two sources of light are said to be coherent, when
both emit light waves of :
(i) same amplitude and have a varying phase difference.
(ii) same wavelength and a constant phase difference.
(iii) different wavelengths and same intensity.
(iv) different wavelengths and a constant phase
difference.
(d) The fringe width in a Young’s double slit experiment
is  . If the whole set-up is immersed in a liquid of
refractive index '  ' , then the new fringe width will be:
(a)  (b) 
 
(c) (d)
 2
(e) The total path difference between two waves
 3 
meeting at points P1 and P2 on the screen are  
 2 
and 2 respectively. Then:
(i) bright fringes are formed at both points.
(ii) dark fringes are formed at both points.
 2 SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM

(iii) a bright fringe is formed at P1 and a dark fringe is [CBSE-55-5-1-(2022)]

formed at P2 16. (i) Draw V-I characteristics of a p-n junction diode.

(iv) a bright fringe is formed at P2 and a dark fringe is (ii) Differentiate between the threshold voltage and the
breakdown voltage for a diode
formed at P1
(iii) Write the property of a junction diode which makes
[CBSE-55-2-1-(2022)]
it suitable for rectification of ac voltages.
8. What is meant by doping of an intrinsic semiconductor?
[CBSE-55-5-1-(2022)]
Name the two types of atoms used for doping of Ge/Si.
17. An ac source of voltage is connected in series with a p-
[CBSE-55-3-1-(2022)]
n junction diode and a load resistor. The correct option
9. Explain the formation of the barrier potential in a p-n for output voltage across load resistance will be
junction.

[CBSE-55-3-1-(2022)]

10. Briefly explain how emf is generated in a solar cell.

Draw its I-V characteristic.

[CBSE-55-3-1-(2022)]
(a)
11. What is meant by energy band gap in a solid? Draw the
energy band diagrams for a conductor, an insulator and
a semiconductor.

[CBSE-55-4-1-(2022)]

12. Name the device which converts electrical energy into

light energy. Write three advantages of the device. (b)

[CBSE-55-4-1-(2022)]

13. Answer the following, giving reason:

(a) The resistance of a p-n junction is low when it is

forward biased and is high when it is reversed biased.
(c)
(b) Doping of intrinsic semiconductors is a necessity for
making electronic devices.

(c) Photodiodes are operated in reverse bias.

[CBSE-55-4-1-(2022)]

14. With the help of a circuit diagram, explain briefly how

a p-n junction diode works as a half-wave rectifier. (d)

[CBSE-55-5-1-(2022)] [CBSE-55-1-1-(2023)]

15. Why a photo-diode is operated in reverse bias whereas 18. When an intrinsic semiconductor is doped with a small

current in the forward bias is much larger than that in amount of trivalent impurity, then:

the reverse bias? Explain. (a) Its resistance increases.

Mention its two uses. (b) It becomes a p-type semiconductor

SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM 1

(c) There will be more free electrons than holes in the (d) Drift of holes only
semiconductor [CBSE-55-2-1-(2023)]
(d) Dopant atoms become donor atoms. 24. Draw energy band diagram for an n-type and p-type
[CBSE-55-1-1-(2023)] semiconductor at T  0 K

19. In the energy-bond diagram of n-type Si, the gap [CBSE-55-2-1-(2023)]

between the bottom of the conduction band EC and the 25. Answer the following giving reasons:
donor energy level ED is of the order of: (i) A p-n junction diode is damaged by a strong current

(a) 10 eV (b) 1 eV (ii) Impurities are added in intrinsic semiconductor.

(c) 0.1 eV (d) 0.01 eV [CBSE-55-2-1-(2023)]

[CBSE-55-1-1-(2023)] 26. At a certain temperature in an intrinsic semiconductor,

20. (a) Differentiate between intrinsic and extrinsic the electrons and holes concentration is 1.5  1016 m 3 .
semiconductors. When it is doped with a trivalent dopant, hole
OR concentration increases to 4.5 1022 m 3 . In the doped

(b) Draw the circuit arrangement for studying the V-I semiconductor, the concentration of electrons  ne  will
characteristics of a p-n junction diode in forward bias be:
and reverse bias. Show the plot of V-I characteristics of
(a) 3 106 m 3 (b) 5  107 m 3
a silicon diode.

[CBSE-55-1-1-(2023)] (c) 5  109 m 3 (d) 6.75  1038 m 3

21. Briefly explain how the diffusion and drift currents [CBSE-55-3-1-(2023)]

contribute to the formation of potential barrier in a p-n 27. If a p-n junction diode is reverse biased,
junction diode. (a) The potential barrier is lowered
[CBSE-55-1-1-(2023)] (b) The potential barrier remains unaffected
22. In an extrinsic semiconductor, the number density of (c) The potential barrier is raised
20 3
holes is 4  10 m . If the number density of intrinsic (d) The current is mainly due to majority carriers.
15 3
carries is 1.2  10 m , the number density of electrons [CBSE-55-3-1-(2023)]
in it is 28. Explain the roles of diffusion current and drift current in
(a) 1.8  109 m 3 (b) 2.4 1010 m 3 the formation of the depletion layer in a p-n junction
diode.
(c) 3.6 109 m 3 (d) 3.2  1010 m 3
[CBSE-55-3-1-(2023)]
[CBSE-55-2-1-(2023)]
29. Explain the property of a p-n junction which makes it
23. The formation of depletion region in a p-n junction
suitable for rectifying alternating voltages. Differentiate
diode is due to
between a half-wave and a full-wave rectifier.
(a) Movement of dopant atoms
[CBSE-55-3-1-(2023)]
(b) Diffusion of both electrons and holes

(c) Drift of electrons only

 2 SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM

30. The threshold voltage for a p-n junction diode used in (iii) What will the effect of (1) forward biasing, and (2)
the circuit is 0.7 V. The type of biasing and current in reverse biasing be on the width of depletion layer in a p-
the circuit are: n junction diode?

OR

(b) (i) With the help of a circuit diagram, briefly explain

the working of a full-wave rectifier using p-n junction
diodes.

(ii) Draw V-I characteristics of a p-n junction diode.

Explain how these characteristics make a diode suitable
(a) Forward biasing, 0A
for rectification.
(b) Reverse biasing, 0A
(iii) Carbon and silicon have the same lattice structure.
(c) Forward biasing, 5 mA
Then why is carbon an isulator but silicon a
(d) Reverse biasing, 2 mA semiconductor?
[CBSE-55-4-1-(2023)] [CBSE-55-4-1-(2023)]
31. Assertion (A): In ‘n’ type semiconductor, number 33. During the formation of a p-n junction:
density of electrons is greater than the number density
(a) Diffusion current keeps increasing
of holes but the crystal maintains an overall change
(b) Drift current remains constant
neutrality.
(c) both the diffusion current and drift current remain
Reason (R): The charge of electrons donated by donor
constant
atoms is just equal and opposite to that of the ionized
(d) Diffusion current remains almost constant but drift
donor.
current increases till both currents becomes equal.
(a) Both assertion (A) and Reason (R) are true and
[CBSE-55-5-1-(2023)]
Reason (R) is the correct explanation of the Assertion
34. Assertion (A): The resistance of an intrinsic
(A).
semiconductor decreases with increase in its
(b) Both Assertion (A) and Reason (R) are true, but
temperature
Reason (R) is not the correct explanation of the
Reason (R): The number of conduction electrons as
Assertion (A). well as hole increase in an intrinsic semiconductor with
(c) Assertion (A) is true, but Reason (R) is false rise in its temperature.

(d) Assertion (A) is false and Reason (R) is also false. (a) Both assertion (A) and Reason (R) are true and

[CBSE-55-4-1-(2023)] Reason (R) is the correct explanation of the Assertion

32. (a) (i) A germanium crystal is doped with antimony. (A).

With he help of energy-band diagram, explain how the (b) Both Assertion (A) and Reason (R) are true, but
conductivity of the doped crystal is affected
Reason (R) is not the correct explanation of the
(ii) Briefly explain the two processes involved in the
Assertion (A).
formation of a p-n junction.
(c) Assertion (A) is true, but Reason (R) is false
SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM 1

(d) Assertion (A) is false and Reason (R) is also false.

[CBSE-55-5-1-(2023)]

35. (a) Draw the circuit arrangement for studying V-I

characteristics of a p-n junction diode in (i) forward
biasing and (ii) reverse biasing. Draw the typical V-I
characteristics of a silicon diode. Describe briefly the
following terms (i) minority carrier injection in forward
biasing and (ii) breakdown voltage in reverse biasing.

OR

(b) Name two important processes involved in the

formation of a p-n junction diode. With the help of a
circuit diagram, explain the working of junction diode
as a full wave rectifier. Draw its input and output
waveforms. State the characteristic property of a
junction diode that makes it suitable for rectification.

[CBSE-55-5-1-(2023)]
 2 SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM

Solutions
When the diode is forward biased, electrons are sent
from n region to p region and holes are sent from p
1. Energy band diagram
region to n region. At the junction the concentration of
Significance
minority carriers increases. Thus at the junction, the
excess minority carriers recombine with majority
carriers and energy is released in the form of photons.

Advantages (any two):

(i) Low operational voltage

(ii) Less power consumption

(iii) Fast action

(iv) Long life and ruggedness

Significance Disadvantages (any two) :

n-type semiconductors – small energy gap between (i) High cost

donor level and conduction band which can be easily
covered by thermally excited electrons.
p- type semiconductors - small energy gap between
acceptor level and valence band which can be easily
covered by thermally excited electrons.
Alternatively
The conductivity of semiconductor is improved with the
creation of donor and acceptor levels.
2. Explanation
The unidirectional property of a diode makes it suitable
for rectification.
(ii) Can get damaged due to overheating
(iii) Excess of voltage or current can damage LED
(Note: A ward last 1 mark, even if disadvantages are not
given).
4. Explanation of Formation of Depletion region
When p-type semiconductor is chipped with n-type
semiconductor, e  from the n-side diffuse towards p-
side and holes from p-side diffuse towards n-side
leaving behind a layer of immobile +ve ions on n-side
and immobile –ve ions on p-side leading to formation of
depletion layer.

Alternatively (Note: A ward 1 mark, if a student draws a diagram

The diode conducts when forward biased and does not showing depletion region)

conduct when reverse biased. 5. Processes

(Award 1 mark if a student draws the forward and Generation of e.m.f.

reverse characteristics of a diode.) The three basic processes for generation of e.m.f. by a
3. Statement of working principle of LED solar cell are:

Advantages (i) Generation of e-h pairs due to light (with hv  E g )

Disadvantages close to the junction.

SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM 1

(ii) Separation of e  s and holes due to electric field of (e) (iv)

the depletion region. 8. Meaning of doping 1

(iii) Collection: e  reaching the n-side are collected by Two types of atom

the front contact & holes reaching p-side are collected Doping is the process of adding some external impurity
by back contact. atoms in an intrinsic semiconductor to increase its

Thus, p-side becomes positive and n-side becomes conductivity.

negative giving rise to photo voltage. Dopant atoms may be pentavalent or trivalent.

6. Explanation of working 9. Explanation of movement of charge carriers / diffusion

Circuit Diagram of full wave rectifier Formation of the barrier potential.

Input & Output Waveform The diffusion of electrons from n-region to p-region and
that of the holes from p-region to n-region creates
positive charge on the n-side and negative charge on the
p-side which causes a difference of potential across the
junction.

This potential, setup across the junction tends to prevent

the movement of electrons from the n-region to p-region
Let input voltage at A w.r.t. the centre tap at any instant .This is called barrier potential.
is positive, then voltage at B will be negative. So, diode
10. Generation of emf
D1 gets forwarded biased & D2 gets reverse biased.
I - V characteristics
Hence output current is obtained. When voltage at A
Three processes due to which emf is generated in a solar
becomes –ve ; then voltage at B would be + ve , hence
cell are.
D1, gets reverse biased & D2 gets forwarded biased . So
output current is again obtained as shown in the figure. (i) Generation of electron-hole pairs due to light incident
close to the junction.

(ii) Separation of electrons and holes due to electric field

of the depletion region. Electrons swept to n-side and
holes to p-side.

(iii) The electrons reaching the n-side are collected by

the front contact and the holes reaching the p-side are
collected by the back contact.

 Thus p-side becomes positive and n-side becomes

(Note: If the student takes inverted input waveform full negative giving rise to photovoltage.
credit to be given).

7. (a) (iii)

(b) (iv)

(c) (ii)

(d) (iii) 
 2 SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM

11. Meaning of energy Band gap (iii) The bandwidth of emitted light is 100 Å to 500 Å

Energy Band Diagram of Conductor, Insulator & or in other words it is nearly (but not exactly)

Semiconductor monochromatic.

The gap between the top of the valence band and bottom (iv) Long life and ruggedness.

of the conduction band is called the energy band gap. (v) Fast action and no warm up time required

(Note- Give credit of half mark to the students for

writing electric bulb or other relevant device, and
further credit marks if they mention the advantages
of written device only)

13. a) For explaining reason

b) For explaining reason

c) For explaining reason

a) When a p-n junction is forward biased, the junction

width decreases and as a result, its resistance also
decreases.

On the other hand, when a p-n junction is reverse biased,

the junction width increases hence resistance increases.

b) Conductivity of intrinsic semi-conductors is very

low. Hence, no electronic device can be developed using
them.

Doping increases conductivity, hence makes intrinsic

semiconductor suitable for making electronic devices.

c) It is easier to observe the change in the current with

change in light intensity if a reverse bias is applied.

Alternatively

The fractional change due to photo-effects on the

minority charge carriers dominated reverse bias current,
is more easily measurable than the fractional change in
12. Naming the device
forward bias current.
Any three Uses
14. Circuit Diagram of p-n junction diode as half wave
Light emitting diode (LED) rectifier
Advantages of LED (Any three of the following) Explanation of its Working
(i) Low operational voltage and less power

(ii) Fast on-off switching capability

SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM 1

 When voltage at A is positive, diode is forward biased

and it conducts and when voltage at A is negative, diode
is reverse biased and it does not conduct, so output is
zero.
Alternatively:

(Note: Full credit if values on the axis are not

mentioned)

(ii) Threshold Voltage: Forward bias voltage at which

the current increases significantly (exponentially) even
for a very small increase in voltage.

Alternatively:
15. Explanation Forward bias voltage at which the width depletion layer
Two uses and barrier potential decreases significantly.

It is easier to observe the change in current with change Alternatively:

in light intensity if a reverse bias is applied. The voltage at which resistance of junction decreases
Alternatively: significantly.

The fractional change due to photo effect on the Break down voltage: Reverse bias voltage at which
minority carrier dominated reverse bias current, is more current increases suddenly
readily measurable than the fractional change in the Alternatively:
forward bias current. Large number of covalent bonds present in the depletion
Uses: (Any two uses) layer break suddenly
 Smoke detector iii) Junction Diode conducts when it is forward biased
 Remote control and does not conduct when reverse biased.
 Medical devices
 Optical signal detection

(Any other uses)

16. V-I characteristics

Difference between threshold voltage and breakdown 17. (c)

voltage 18. (b) It becomes a p-type semiconductor

Difference between threshold voltage and breakdown 19. (d) 0.01eV

voltage 20. (a) Difference between intrinsic and extrinsic
Property of junction diode semiconductor

(i) Intrinsic semiconductor Extrinsic semiconductor

 2 SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM

1. Pure semiconductor Semiconductor is doped 22. (c) 3.6  109 m 3

with impurities 23. (b) Diffusion of both electrons and holes.

2. Low conductivity at High conductivity at 24. Drawing of energy band diagrams at T  0 K for
room temperature room temperature  n-type semiconductor

3. ne  nh ne  nh  p-type semiconductor

(Any one)

Note: Give full credit if a student writes any other

relevant correct answer.

OR

(b) Circuit diagram for forward and reverse biased p-n

junction diode.

V-I characteristic (forward and Reverse bias)

25. Reasons for

(i) Damage of a p-n junction diode by a strong current

(ii) Adding impurities in intrinsic semiconductor

(i) Due to strong current, a junction diode gets heated,

consequently large number of covalent bonds are
broken and the junction is damaged

(ii) Deliberate addition of impurity atom in intrinsic

semiconductor increases its conductivity and is suitable
for making electronic devices.

Alternatively

Give full credit if a student writes that no electronic

device can be developed using intrinsic semiconductor
because of their low conductivity.

26. (c) 5  109 m 3

27 (c) The potential barrier is raised

21. Formation of potential barrier
28. Roles of diffusion current and drift current
The diffusion current due to concentration gradient at
During the formation of p-n junction, and due to the
the junction forms a space charge region consisting of
concentration gradient across p-,and n-sides, holes
immobile charge carries. Due to this an electric field is
generated at the junction giving rise to drift current in a diffuse from p-side to n-side  p  n and electrons

direction opposite to diffusion current. diffuse from n-side p-side  n  p  . When an electron
The potential at which diffusion current becomes equal diffuses from n  p, it leaves behind an ionized
to drift current is called potential barrier.
SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM 1

done (positive charge) on n-side which is immobile.

Similarly, when a hole diffuses from  p  n due to

the concentration gradient, it leaves behind an ionised

acceptor (negative charge) which is immobile. This
space-charge region on either side of the junction
together is known as depletion region.
(ii) Two processes
As a result. an electric field is developed across the
(a) Diffusion (b) Drift
junction. Due to this field, an electron on p-side of the
junction moves to n-side and a hole on n-side of the Diffusion: Due to concentration gradient majority

junction moves to p-side. The motion of charge carriers charge carrier that is electron moves from n  p side

due to the electric field is called drift Initially, diffusion
current is large and drift current is small.
As the diffusion process continues, the electric field
strength & hence drift current increases .This process
continues till diffusion & drift current becomes equal.
29. Explanation of property
and hole to p  n side. This movement of charge is
called diffusion.
Drift: Due to the junction field, an electron on p-side of
the junction moves to n-side and a hole on n-side of the
junction moves to p-side. The motion of the charge
carrier due to electric field is called drift.

Difference between half wave and full wave rectifier. (iii) (1) Decreases

p-n junction conducts in forward bias. (2) Increases

Alternatively: p-n junction is a uni-directional device. OR

The half-wave rectifier gives output only for half of the (b) (i) Circuit diagram
input cycle. The full-wave rectifier gives output for both Working
the halves of the input cucles. (ii) V-I characteristics
Alternatively: If output waveform of both the rectifiers Explanation
shown diagrammatically, then full credit to be given.
(iii) Reason
30. (a) Forward biasing, 0A
(i)
31. (a) Both assertion (A) and Reason (R) are true and

Reason (R) is the correct explanation of the Assertion

(A).

32. (i) Explanation with band diagram

(ii) Brief explanation of the two processes

(iii) Effect on width of depletion layer

(i) With proper level of doping, the number of Working: Suppose the input voltage to A with respect

conduction electrons can be made much larger than the to the centre tap at any instant is positive. A that instant

number of holes. Due to this conductivity of the doped voltage at B, being out of phase will be negative. So

crystal increases. diode D1 gets forward biased and conducts, while D2

being reverse biased does not conduct. Similarly during

 2 SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM

second half of the cycle polarity get reversed so only

D2 will conduct.

(ii) V-I characteristics

This diagram shows that the diode conducts when

forward biased and does not conduct when reverse
biased. This characteristic makes it suitable for use for
rectification.

(iii) The 4 bonding of electron of C and Si lie

respectively, in the second and third orbit. Hence energy
required to take an electron from their atoms will be

much less than that for C. Hence number of free e  for

conduction in SI significant but negligibly small for C.

33. (d) Diffusion current remains almost constant but drift

current increases till both currents becomes equal.

34. (a) Both assertion (A) and Reason (R) are true and

Reason (R) is the correct explanation of the Assertion

(A).

35. (a) Circuit arrangement for V-I characteristics of p-n

junction in

(i) Forward bias (Note: Please do not deduct marks for not showing

(ii) reverse bias values)

V-I characteristics Minority carries injection: Under forward bias

electrons from n-side cross the depletion region and
Explanation of
reach p-side. Similarly, hole from p-side cross the
(i) Minority carrier injection in forward bias
junction and reach the n-side.
(ii) Breakdown Voltage in reverse bias
Breakdown voltage: It is the voltage under reverse bias
(i)
for which reverse current increase sharply.

OR

(b) Naming two important process

SEMICONDUCTOR DEVICES AND COMMUNICATION SYSTEM 1

Circuit diagram voltage (across RL ) during the negative half cycle of the
Working of junction diode as a full wave rectifier. input ac.
Input & output waveforms

Characteristics / Property

(a) Diffusion

Drift

Property Junction diode allows current to pass only

when it is forward biased.
Suppose the input voltage to A with respect to the
centre-tap at any instant is positive. At that instant,
voltage at B being out of phase will be negative. So,
diode D1 gets forward biased and conducts (while D2

being reverse biased is not conducting). Hence, during

this positive half cycle we get an output current (and a
output voltage across the load resistor RL ). In the course

of ac cycle when the voltage at A becomes negative with

respect to centre lap, the voltage at B would he positive.
In this part of the cycle diode D1 would not conduct but

diode D2 would, giving an output current and output