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Lecture15
Lecture15
Lecture15
OUTLINE
The Bipolar Junction Transistor
• Introduction
• BJT Fundamentals
VEB = VE – VB VBE = VB – VE
VCB = VC – VB VBC = VB – VC
VEC = VE – VC VCE = VC – VE
= VEB - VCB = VCB - VEB
Note: The current flow sign convention used in the Pierret textbook does not
follow IEEE convention (currents defined as positive flowing into a terminal);
nevertheless, we will use it.
R. F. Pierret, Semiconductor Device Fundamentals, p. 372
Review: Current Flow in a
Reverse-Biased pn Junction
• In a reverse-biased pn junction, there is negligible diffusion
of majority carriers across the junction. The reverse
saturation current is due to drift of minority carriers across
the junction and depends on the rate of minority-carrier
generation close to the junction (within ~one diffusion
length of the depletion region).
We can increase this reverse current by increasing the
rate of minority-carrier generation, e.g. by
➢optical excitation of carriers (e.g. photodiode)
ICp
IC
current gain dc
IB
BJT Design
• To achieve high current gain:
– The injected minority carriers should not recombine within
the quasi-neutral base region
e
Electric field, (x)
I C = α dc (I C + I B ) + I CB 0
α dc I CB 0
IC = IB +
1 − α dc 1 − α dc • Common-Emitter d.c.
= βI B + I CE 0 Current Gain:
IC dc
dc
Lecture 25, Slide 13 I B 1 − dc
Summary: BJT Fundamentals
• Notation & conventions: IE = IB + IC
pnp BJT npn BJT
• Electrostatics:
– Under normal operating conditions, the BJT may be
viewed electrostatically as two independent pn junctions
BJT Performance Parameters
I Ep
• Emitter efficiency
I Ep + I En
I Cp
• Base transport factor T
I Ep
I Cp
• Common base d.c. current gain dc T =
IE
IC dc
• Common emitter d.c. current gain dc
I B 1 − dc