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Electronic Principles 7th Edition Albert P. Malvino full chapter instant download
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7th EDITION
7th EDITION
Albert Malvino
David J. Bates
About the Authors
Albert P. Malvino was an electronics technician while serving in the U.S. Navy from 1950 to 1954. He
graduated from the University of Santa Clara Summa Cum Laude in 1959 with a B.S. degree in Electrical
Engineering. For the next five years, he worked as an electronics engineer at Microwave Laboratories and
at Hewlett-Packard while earning his MSEE from San Jose State University in 1964. He taught at Foothill
College for the next four years and was awarded a National Science Foundation Fellowship in 1968. After
receiving a Ph.D. in Electrical Engineering from Stanford University in 1970, Dr. Malvino embarked on a
full-time writing career. He has written 10 textbooks that have been translated into 20 foreign languages
with over 108 editions. Dr. Malvino is currently a consultant and designs microcontroller circuits for SPD-
Smart™ windows. In addition, he is writing educational software for electronics technicians and
engineers. He also serves on the Board of Directors of Research Frontiers Incorporated. His website ad-
dress is www.malvino.com.
David J. Bates is an instructor in the Electronic Technologies Department of Western Technical
College located in La Crosse, Wisconsin. Along with working as an electronic servicing technician and
as an electrical engineering technician, he has over 25 years of teaching experience.
Credentials include an A.S. degree in Industrial Electronics Technology, B.S. degree in Industrial
Education, and an M.S. degree in Vocational/Technical Education. Certifications include an FCC GROL
license, A+ certification as a computer hardware technician, and a Journeyman Level certification as
a Certified Electronics Technician (CET) by the International Society of Certified Electronics
Technicians (ISCET). David J. Bates is presently a certification administrator (CA) for ISCET and has
served as a member of the ISCET Board of Directors, along with serving as a Subject Matter Expert
(SME) of basic electronics for the National Coalition for Electronics Education (NCEE).
David J. Bates is also a co-author of “Basic Electricity” a text-lab manual by Zbar, Rockmaker, and
Bates.
Dedication
Electronic Principles, 7th ed. is dedicated to my family and friends who have been so supportive
during this process and especially to Jackie, whose patience and skills helped put this all together.
vi Chapter 1
Contents
Preface xiii
Chapter 1 Introduction 2
1-1 The Three Kinds of Formulas 1-5 Thevenin’s Theorem
1-2 Approximations 1-6 Norton’s Theorem
1-3 Voltage Sources 1-7 Troubleshooting
1-4 Current Sources
Chapter 2 Semiconductors 28
2-1 Conductors 2-9 Forward Bias
2-2 Semiconductors 2-10 Reverse Bias
2-3 Silicon Crystals 2-11 Breakdown
2-4 Intrinsic Semiconductors 2-12 Energy Levels
2-5 Two Types of Flow 2-13 The Energy Hill
2-6 Doping a Semiconductor 2-14 Barrier Potential and
2-7 Two Types of Extrinsic Temperature
Semiconductors 2-15 Reverse-Biased Diode
2-8 The Unbiased Diode
vii
Chapter 4 Diode Circuits 88
4-1 The Half-Wave Rectifier 4-8 Other Power-Supply
4-2 The Transformer Topics
4-3 The Full-Wave Rectifier 4-9 Troubleshooting
4-4 The Bridge Rectifier 4-10 Clippers and Limiters
4-5 The Choke-Input Filter 4-11 Clampers
4-6 The Capacitor-Input Filter 4-12 Voltage Multipliers
4-7 Peak Inverse Voltage and
Surge Current
viii Contents
Chapter 8 Transistor Biasing 260
8-1 Voltage-Divider Bias 8-5 Other Types of Bias
8-2 Accurate VDB Analysis 8-6 Troubleshooting
8-3 VDB Load Line and Q Point 8-7 PNP Transistors
8-4 Two-Supply Emitter Bias
Contents ix
Chapter 13 JFETs 424
13-1 Basic Ideas 13-7 JFET Amplifiers
13-2 Drain Curves 13-8 The JFET Analog Switch
13-3 The Transconductance Curve 13-9 Other JFET Applications
13-4 Biasing in the Ohmic Region 13-10 Reading Data Sheets
13-5 Biasing in the Active Region 13-11 JFET Testing
13-6 Transconductance
x Contents
Chapter 17 Differential Amplifiers 618
17-1 The Differential Amplifier 17-5 Common-Mode Gain
17-2 DC Analysis of a Diff Amp 17-6 Integrated Circuits
17-3 AC Analysis of a Diff Amp 17-7 The Current Mirror
17-4 Input Characteristics of an Op Amp 17-8 The Loaded Diff Amp
Contents xi
21-5 VCVS Unity-Gain Second-Order 21-10 Bandstop Filters
Low-Pass Filters 21-11 The All-Pass Filter
21-6 Higher-Order Filters 21-12 Biquadratic and State-
21-7 VCVS Equal-Component Variable Filters
Low-Pass Filters
21-8 VCVS High-Pass Filters
21-9 MFB Bandpass Filters
xii Contents
Preface
Electronic Principles, seventh edition, continues its tradition as a clearly explained, in-depth introduction to
electronic semiconductor devices and circuits. This textbook is intended for students who are taking their first
course in electronic circuits. The prerequisites are a DC/AC Circuits course, algebra, and some trigonometry.
Electronic Principles provides essential understanding of semiconductor device characteristics, test-
ing, and the practical circuits in which they are found. The text provides clearly explained concepts—written
in an easy-to-read conversational style—esta blishing the foundation needed for understanding the operation
and troubleshooting of electronic systems. Practical circuit examples are found throughout the chapters.
xiii
Guided Tour
Learning Features
Many new learning features have been incorporated into the seventh edition of Electronic Principles. These
learning features, found throughout the chapters, include:
CHAPTER INTRODUCTION
Each chapter begins with a brief introduction setting the
stage for what the student is about to learn.
CHAPTER OBJECTIVES
Chapter Objectives provide a concise statement of expected
learning outcomes.
VOCABULARY
A comprehensive list of new vocabulary words alerts
the students to key words found in the chapter. Within
the chapter, these key words are highlighted in bold
print the first time used.
GOOD TO KNOW
Good To Know statements, found in the margins, provide
interesting added insights to topics being presented.
EXAMPLES
Each chapter contains worked-out Examples that
demonstrate important concepts or circuit operation,
including circuit analysis, applications, troubleshooting,
and basic design.
MULTISIM
Students can “bring to life” many of the cir-
cuits found in each chapter. A CD contain-
ing MultiSim files is included with the text-
book; with these files students can change
the value of circuit components and in- DATA SHEETS
stantly see the effects, using realistic Tek-
tronix and Agilent simulation instruments. Full and partial component data
Troubleshooting skills can be developed by sheets are provided for many semi-
inserting circuit faults and making circuit conductor devices; key specifica-
measurements. Students new to computer tions are examined and explained.
simulation software will find a MultiSim Complete data sheets of these de-
Primer in the appendix. vices can be found on the Internet.
Guided Tour xv
Figure 7-22 Phototransistor.
nent, and concentrate on the thermally produced carriers in the collec-
tor diode. Visualize the reverse current produced by these carriers as an
COMPONENT PHOTOS
(a) Open base gives maximum
ideal current source in parallel with the collector-base junction of an
sensitivity; (b) variable base resistor
changes sensitivity; (c) typical
phototransistor.
ideal transistor (Fig. 7-21b).
Because the base lead is open, all the reverse current is forced
into the base of the transistor. The resulting collector current is:
Photos of actual electronic devices bring students
closer to the device being studied.
+VCC
ICEO ⫽ dcIR
RC
where IR is the reverse minority-carrier current. This says that the collector cur-
rent is higher than the original reverse current by a factor of dc.
The collector diode is sensitive to light as well as heat. In a phototran-
(a)
sistor, light passes through a window and strikes the collector-base junction. As
the light increases, IR increases, and so does ICEO .
+VCC
RC
Phototransistor versus Photodiode
The main difference between a phototransistor and a photodiode is the current
RB
gain dc. The same amount of light striking both devices produces dc times
more current in a phototransistor than in a photodiode. The increased sensitivity
(b)
of a phototransistor is a big advantage over that of a photodiode.
Figure 7-22a shows the schematic symbol of a phototransistor. Notice
the open base. This is the usual way to operate a phototransistor. You can control
the sensitivity with a variable base return resistor (Fig. 7-22b), but the base is
usually left open to get maximum sensitivity to light.
The price paid for increased sensitivity is reduced speed. A phototran-
sistor is more sensitive than a photodiode, but it cannot turn on and off as fast. A
photodiode has typical output currents in microamperes and can switch on and
off in nanoseconds. The phototransistor has typical output currents in mil-
(c) liamperes but switches on and off in microseconds. A typical phototransistor is
shown in Fig. 7-22c.
© Brian Moeskau/Brian Moeskau Pho-
tography
Optocoupler
Figure 7-23a shows an LED driving a phototransistor. This is a much more sensitive optocoupler than the
LED-photodiode discussed earlier. The idea is straightforward. Any changes in VS produce changes in the
LED current, which changes the current through the phototransistor. In turn, this produces a changing volt- SUMMARY TABLES
age across the collector-emitter terminals. Therefore, a signal voltage is coupled from the input circuit to the
output circuit.
Again, the big advantage of an optocoupler is the electrical isolation between the input and output
circuits. Stated another way, the common for the input circuit is different from the common for the output cir-
Summary Tables have been included at important
cuit. Because of this, no conductive path exists between the two circuits. This means that you can ground one
Figure 7-23 (a) Optocoupler with LED and phototransistor; (b) optocoupler IC.
points within many chapters. Students use these
+
RS RC
+
tables as an excellent review of important topics,
VS VCC
– –
C
N
B ⫽ B P ⫽ B
N
E
E
E
Out-of-Circuit Tests
A transistor is commonly tested using a DMM set to the diode test range. Figure 7-15 shows how an npn tran-
sistor resembles two back-to-back diodes. Each pn junction can be tested for normal forward and reverse bi-
ased readings. The collector to emitter can also be tested and should result in an overrange indication with ei-
ther DMM polarity connection. Since a transistor has three leads, there are six DMM polarity connections
possible. These are shown in Fig. 7-16a. Notice that only two polarity connections result in approximately a
0.7 V reading. Also important to note here is that the base lead is the only connection common to both 0.7 V
readings and it requires a (+) polarity connection. This is also shown in Fig. 7-16b.
A pnp transistor can be tested using the same technique. As shown in Fig. 7-17, the pnp transistor
also resembles two back-to-back diodes. Again, using the DMM in the diode test range, Fig. 7-18a and 7-18b
show the results for a normal transistor.
Many DMMs have a special dc or hFE test function. By placing the transistor’s leads into the proper
slots, the forward current gain is displayed. This current gain is for a specified base current or collector cur-
rent and VCE. You can check the DMM’s manual for the specific test condition.
Another way to test transistors is with an ohmmeter. You can begin by measuring the resistance be-
tween the collector and the emitter. This should be very high in both directions because the collector and
emitter diodes are back to back in series. One of the most common troubles is a collector-emitter short, pro-
Figure 7-16 NPN DMM Readings (a) Polarity connections; (b) pn junction readings. COMPONENT TESTING
C
⫹
B
⫺
E
Reading
0.7
–
0.7
Students will find clear descriptions of how to
E
B
B
C
0L
0.7 B
+ + –
0L
test individual electronic components using
C
C
B
E
0L
0L
+
0.7
– +
common equipment such as digital multimeters
E C 0L
–
E
(DMMs).
(a) (b)
xviii
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