133T Bipolar Junction Transistor

Device of choice for discrete and integrated circuits

before the widespread
popularity of
MOSFET

specially dominent in very high frequency application

177 Basics
BIT has 3 terminals
D Emitter
2 Base
3 Collector
Bast
2 Types of BIT D Npn p type
2 pnp n type

metal
Ptype contact
n type

ye
Emitter Base collector
miffy Region collector

Ipo
Region Region e
E

Emitter Base
t collector Base
Junction Bag Junction
EBI CBD

Fig Npn transistor

 P N P
E Emitter Base collector
e

Actualstructuret E
Daf
p
É of

Fig cross section of an Npn BIT

BIT mode of operation

Mode EBI CBI

cut off Reverse Reverse

Active forward active Forward Reverse

Reverse Active Reverse Forward
Saturation Forward Forward

Amplifier Active mode

Logic circuits cut off saturation
 FE IB Ie

EI m n t
C
p
IE IBTIC 90 95
B
lot
TIB
e it
forward Reverse
Bias Bias
BE VCB

Iit

currentgain.im Vin IIe

gain Inti common
CUT
Emitter

emitter current gain 0

common
p 41 7 7 73
p É
common base current gains

4 É 0.9 IEEE

B IB
Vin O
Ie LIE P IB

IF I
H N
Derelationbetweenat
IE IB T Ic

I
ti
t
4 and P i

etfbtm
Informationtorememberin VBE 0 fi
1 collector current i Is Current Ymir aim
BIT M Therefore
2 Base current i p
Ig BE O Qu
3 emitter current ie i Bt ie

9 ie Lie die p is
5 ie p EB y E EE
6
p common emitter current
gain
7 4 common base current
gain
8 L Is pi

9 Vt KI
10 K Boltzmann constant

Da Npn BIT in saturation

saturation Both Junction forward Bias

Vcr 2 o gu Active mode

VB C 0.4 saturation mode

T YT e

y
 2 tests to determine whether BIT in saturation or not
VB C o y sat
is 100 Bein sat
p easier
Vce 0.3 v saturation
Vee of a saturated transistor VCE sat VB E VBC

VCE sat I 0.1 0.3 V

at the edge of saturation Veesat 030

deep saturation Vee sat O V

1 5 sartorial

Npn
1 p
pnp
ae
MF 18010 pnp

rev reverse Active mode

E e
von
gggana VEB
for yep

IIe
We know

ie ice is
p
If pi

MOSFET voltage controlled

switch

BIT current controlled

switch

door Torii marry Base

current apply out output
U ie amor

T o e
IBQ IB specific value Part
we
Ie Mor
I
current controlled
device

controlling voltage is
as
easier than controlling
current thats
why
MOSFET is more populate
Math The transistor in the circuit has
p too Ysu
and Be 0.7 v at
ie 1mA Design the re
cut so that 2mA current flows
1
through collector and a voltage of
su appears at the collector 7

4
2 1
guess
Sot here IB yo unlike gate current Ig in
MOSFET

Ysu
B É a
d
EE
Re
4 1 Ie IE IIe
IB o I Ve

Question
VB E
a

O IV
by chance
c'c
at

IMA
anti
BIT on
I FE.ve
LIE RE
a 0.99
f
5V
IB 0

Now Vc 5 V
et
TE say
ice a ma
 Now ie Is emf

VB Ez V BE Vt In
E
In
E VBÉI
VBE 0.7 25 153 121

0.717 V
VBE VBez Ut In E
VBEz BE Ut In EI
VBE
Van
BE VB VE
0.717 O VE
VE 0 717

Now ie 2mA

IB Toft 0 02 MA

2.02 MA
CE
I gyp 73
RE 451
9372 7.07422
SOMI VE 0.7 V 13 50

IE 198F 0.93mA

Ic 0 91 MA

I IE IB Ie IB 0.93 0 91 0 02 MA

5 45 U
1051 0.91 I Ve

Ic I t Re 4.7km

FIFI

Ca D assume LIE
RE 33hr
Sod VBE VB VE O 7

VE VB 0.7 4 O 7V 3 30

i IE 3331 MA

Ic I
IF 0.99mA Re 4.7km
Ie TIE IE
av

IB

Now
1 0.99

Ice
M
0.01 MA
FEEL Re 33m
IIE

1 Ver 5 34 9
0.99
1 1
d
347 o y

Vc 5.347N active Region

Ty
Ic I
Re 4.7km
b Vce 0.3W edge of sat VBB

F I
BE OAU

4 1 IB O

IC RE 33K
LIE
IE

Apply KUL in collector emitter loop

IE RE
t
10 ICRC VCE
10 IEC Ret RE TUE
 10 IE 4.7 3.3 03

IE 1 2125 MA Ic

V5.31 1 2125 VE GV

VBE 0.7 VB GV VB 4.7 V

start from EEE C 34 13 11

 S O
SOMI a Vez 5 0.7 Y
L
VE 0 9 active
Vce guy
LOAN BE O 7

V
Ie
75 5 MA

50 4 505 0.98
13

D Eg IB E O IMA

d
EE IE of 5.10mA

Ic 5 10 01 5 MA

3
0.1 01
43,3 VBB
IB
j
b at the edge of saturation VCE 0.30

Ie 10501 9 7 MA Ve 0.30
VE OV
k
FB
If 0.194 MA

VCB 0 3 0 7 04 ve
VK.gr e
edge of
0 194 375 saturation

43,3 2 64 V
use armor
pPforced
e To operate deep in saturation Vee O zu Ve O 2V
VBE O IV VB O FV
10
Ice 9.8 MA Ver 0.2 0 7
o 50 Go y
IB
Ho 0.98mA Pforced
D I
deep in
saturation
0.98 VBB UBB 10.5 U
j
E FOU Find Ie IB IE Ue Ve VB
IIe 13 50
9.742
TGV V

IÉY33.362LIE VE

sole
13 50 IIe
0.98 4.74m
4 59 TGV VB

VBE O.TV
IF
at
Move
VB VE 0.7 33.362LIE
G VE 0.7
I
VE 5.3

Ie 53331 1 6m1
IEI
i
II
Ic 0.98 1 6 10 Vc
L
IF LIE
Ie 1.568 ma 72
1 568

Ve 2 63W
 6 3.37 s o g v
VCB 3 63
d
deep saturation
VCE 2.63 5 3 3 67 V
i
VCE 0 LV

O 2 Ve VE

Vc 0.2 5.3 5.5 V

5 0.957 MA
Ic
14
i

Ie I G O 957 0 643 ma
i IB IE

1 988
Pforced a
Fg 8 37

looks

I 15N
Tmm son Th

te
Vin 9 15 5
ane 12th
Rin 33.3342
É 1st
 15N
VBE 0.7N
T
100 a
IT 5km
13

Kui zase Emitterlop 33.33nF

5 113 33 3 3 VBETIEXZ ÉMIGVE
d
LIE BIB
IB 535.3
3K
If p f

IB Ftp
i
5 a FEW 33 33 0.7 IE 3

IE 1 29mA

IB I 0.0127 MA

Ie IE IB 1 277 MA

IB 53.3 0.0127 33
Ver 86 9 58 V
VB 4.58 v
OG V
f 9.03 V 7
Ic 1551 Ve 8 Gv I activemode
 Determine voltage
through all nodes and
current through all
branches

Self
given P 100 92 1

4 0.99
1

100

TMTso
t gu
155
r
um
the
FEI
50 Ky
45 33.33

5 th

µ
 TY
Fed 5hr Lee

Yu
3333m
heyy
glam
iIE

uvisBase emitter ty
Ie
135hr
2k
LIE

5 33 33 IB TUBE TIE 3

Iggy Iam
LIE BIB g.IE
IE BIB

IB Ftp L
II I Ie LIE

5 33 33
FEW 0.7 TIE 3
if Ie

Ie z 1 28mA
IE 1.29 MA
IB 0 02 MA
 0.02 533.14 VB 4 334 V

i VE 3 634 V

1 28
1551 Vc 8 GV

4.226 o y active region

VCB 8 6 9 334

Q2 PNP BIT VEB 0.7W

Bz Ve 8 GU

VE 2 9 3V

since At 1 FB negligible IET Iez

BLUE IE IE 1511 2.85 MA

Fez 2 85 MA

X 2.85 2 822mA Ppl

Ica LIE

i Vez Ie X 2 7 2 82 2 7 V 7.62 V

VB c 0.98 S O active
r
8 6 7 62 g
 0282 MA
gf
0
Now IB p.IE

formonaccuracy ty
current across 5hr
I d sur 2K
LIE

t Iym
ICE Ie I Bz

1 28 0 0282 m
TB IET
2 4 2518 MA y3kr

i
Ve 15 5 1.2518 8.7411 V
VB 8.74 V
8
0.72 VE 8.74 I VE 0.7 74 9.44 U

2.78mA
IE 1529.1
0.99 2 78 2 75 MA
Ie
Fax 2 7 2 75 2 7 7 93 V
Vez
0.0275 MA
IBz
If 3,1
1
BIT Biasing