ECE 370 HW set 4

1. The steady-state electron distribution in silicon can be approximated by a linear function

of x. The maximum electron concentration occurs at x = 0 and is n(0) = 2x10 16 cm-3. At x =0.012
cm, the electron concentration is 5x1015 cm-3. If the electron diffusion coefficient is Dn=27
cm2/s, determine the electron diffusion current density.

dn Δn
J n =eD n =eDn
dx Δx

[
J n =( 1 . 6×10−19) ( 27 )
2×10 16−5×10 15
0−0 . 012 ]
J n =−5 . 4 A/cm2
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2. In silicon, the electron concentration is given by n(x) = 1015 exp(-x/Ln) cm-3 for x≥0 and
the hole concentration is given by p(x) = 5x1015 exp(+x/Lp) cm-3 for x≤0 . The parameter values
are Ln =2 x10-3 cm and LP = 5 x10-4 cm. The electron and hole diffusion coefficients are Dn = 25
cm2/s and DP =10 cm2/s, respectively.
a) Find the electron diffusion current density for for x≥0 and give its value for x = 0, x= Ln,
x= 2 Ln
b) Find the hole diffusion current density for x≤0 and give its value for x = 0, x = -Lp, x= -2Lp.
c) The total current density is defined as the sum of the electron and hole diffusion current
densities at x = 0. Calculate the total current density.

For electrons:
J n =eD n =eDn [ 1015 e n ]
dn d − x /L
dx dx
15 −x / Ln
−eD n ( 10 ) e
=
Ln
At x=0 ,
−( 1 .6×10−19 ) ( 25 ) ( 1015 )
J n= =−2 2
2×10−3 A/cm
For holes:
=−eD p [ 5×1015 e p ]
dp d + x /L
J p =−eD p
dx dx
15 + x /L p
−eD p ( 5×10 ) e
=
Lp
For x=0 ,
−( 1 .6×10−19 ) ( 10 ) ( 5×1015 )
J p=
5×10− 4 =−16 A/cm2
J Total =J n ( x=0 ) + J p ( x=0 )
 =−2+ (−16 )=−18 A/cm2

3. a) Plot the built-in potential barrier for a symmetrical (Na = Nd) silicon pn junction at
T = 300 K over the range 1014 ≤ Na = Nd ≤ 1017 cm-3.
(b) Repeat part (a) for a GaAs pn junction.
(c) Repeat parts (a) and (b) for T = 400 K.

(a) Silicon (T =300 K)

V bi =( 0 . 0259 ) ln

14
[ N a Nd
( 1. 5×1010 )2 ]
For N a =N d =10 cm ; V bi =0 . 4561 V
−3

=10 15 ; V
=10 16 ; =0. 6946 V
=10 17 ; =0. 8139 V
(b) GaAs (T =300 K)
V bi =( 0 . 0259 ) ln
[ Na N d
( 1. 8×106 )2
14
]
For N a =N d =10 cm ; V bi =0 . 9237 V
−3

=10 15 ; =1 . 043 V
16
=10 ; =1 . 162 V
17
=10 ; =1 . 282 V
(c) Silicon (400 K), kT =0. 034533
ni =2 .38×1012 cm−3
14
For N a =N d =10 cm ; V bi =0 . 2582 V
−3

=10 15 ; =0. 4172 V

=10 16 ; =0. 5762 V
17
=10 ; =0. 7353 V
9
GaAs(400 K), ni =3 .29×10 cm
−3

14
For N a =N d =10 cm ; V bi =0 . 7129 V
−3

=10 15 ; =0. 8719 V

16
=10 ; =1 . 031 V
4. Consider a uniformly doped silicon pn junction with doping concentrations Na =2 x 10 17 cm-3
and Nd = 4 x 1016 cm-3 for T=300 K. The cross sectional area of the junction is 2 x10-4 cm2 and
the applied reverse-biased voltage is VR = 2.5 V. Calculate (a) Vbi, (b) xn, xp, W,
(c) |Emax|, and (d) the junction capacitance.

7.17

(a)
V bi =( 0 . 0259 ) ln
[ ( 2×1017 )( 4×1016 )
( 1 . 5×1010 )2 ]
V
(b)

{ )}
1/ 2

( )(
2 ∈s ( V bi +V R ) N a 1
x n=
e Nd N a+ N d

= { 2 ( 11. 7 ) ( 8 . 85×10−14 ) ( 0 .8081+2 . 5 )

1 .6×10−19

)}
1/2
¿
(
2×1017
4×10 16
1
)(
2×10 +4×10 16
17

=0.2987×10−4 cm
or x n =0 .2987 μ m

{ )}
1/ 2

( )(
2 ∈s ( V bi +V R ) N d 1
x p=
e Na Na+Nd

= { 2 ( 11. 7 ) ( 8 . 85×10−14 ) ( 0 .8081+2 . 5 )

1 .6×10−19

)}
1/2
¿
(
4×10 16
2×1017
1
)(
2×10 +4×10 16
17

=5.97×10−6 cm
or x p =0 . 0597 μ m

{ )}
1/ 2

(
2 ∈s ( V bi +V R ) N a + N d
W=
e Na N d

= { 2 ( 11. 7 ) ( 8 . 85×10−14 ) ( 0 .8081+2 . 5 )

1 .6×10−19

[ ]}
1/2
2×1017 +4×1016
¿
( 2×1017 ) ( 4×1016 )
=0.3584×10−4 cm
or W =0 .3584 μ m
Also W =x n +x p =0 . 3584 μ m
 2 ( V bi + V R ) 2 ( 0 .8081+ 2. 5 )
|Ε max|= =
(c) W 0 . 3584×10−4
=1 .85×10 5 V/cm

{ }
1 /2
e ∈s Na Nd
C= A
2 ( V bi +V R )( N a + N d )
(a)
=( 2×10−4 ) { ( 1. 6×10−19 ) ( 11. 7 ) ( 8 . 85×10−14 )
2 ( 0 . 8081+2. 5 )

[ ]}
1/2
( 2×1017 ) ( 4×1016 )
¿
2×1017 +4×1016
=5 .78×10−12 F
or C=5 .78 pF

5. A pn jubnction silicon diode at T = 300 K has the following parameters: Nd = 10 18 cm-3,

Na = 1016 cm-3, Dn = 25 cm2/s, Dp = 10 cm2 /s, τ n 0= τ p 0 = 1 ms, and A = 10-4 cm2.
a) Draw the energy band diagram indicating the value of qVbi and the location of the Fermi
levels under equilibrium.
Determine the diode current for
(b) a forward-bias voltage of 0.5 V, and
(c) a reverse biased voltage of 5 V.

+
For an n p silicon diode

I S = Aen2i ⋅
1
Na √ Dn
τ nO
( 10 )( 1. 6×10−19 )( 1. 5×10 10) 2 25
√
−4
=
10 16 10−6
or
I S =1 . 8×10−15 A
(a) For V a =0 . 5 V,

( )
Va
I D ≃I S exp
Vt

=( 1. 8×10−15 ) exp ( 0.0259

0 .5
)
or
I D =4 . 36×10−7 A
(b) For V a =−0. 5 V,
I D =( 1 .8×10−15 ) exp
[ ( ) ] −0. 5
0. 0259
−1
 or
I D ≃−I S =−1 . 8×10−15 A
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