SI2312B

Features
• Trench LV MOSFET Technology
• High Power and Current Handing Capability
• Moisture Sensitivity Level 1
• Halogen Free. “Green” Device (Note 1) N-Channel MOSFET
• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)

Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
SOT-23
• Thermal Resistance: 100°C/W Junction to Ambient(Note 2)
A
Parameter Symbol Rating Unit D

3
Drain-Source Voltage VDS 20 V
C B

Gate-Source Volltage VGS ±10 V

1 2

TA=25°C 6.8 F E

Continuous Drain Current ID A

TA=70°C 5.4

Pulsed Drain Current(Note 3) IDM 27.2 A G H J

L

Total Power Dissipation（Note 4） PD 1.25 W K

DIMENSIONS
Note:
INCHES MM
1. Halogen free "Green” products are defined as those which contain <900ppm bromine, DIM NOTE
MIN MAX MIN MAX
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
A 0.110 0.120 2.80 3.04
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. B 0.083 0.104 2.10 2.64
Copper, in a still air environment with TA =25°C. C 0.047 0.055 1.20 1.40
3. Repetitive rating; pulse width limited by max. junction temperature. D 0.034 0.041 0.85 1.05
4. PD is based on max. junction temperature, using junction-ambient thermal resistance. E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
Internal Structure and Marking Code J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
D
L 0.007 0.020 0.20 0.50
D
Suggested Solder Pad Layout
1. GATE

G
2. SOURCE
3. DRAIN
S12. 0.031
0.800

G S 0.035
0.900
S
0.079 inches
2.000 mm

0.037
0.950
0.037
0.950

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 SI2312B

Electrical Characteristics @ 25°C (Unless Otherwise Specified)

Parameter Symbol Test conditions Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 20 V

Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 0.5 0.7 0.9 V

Gate-Body Leakage Current IGSS VGS=±10V, VDS=0V ±100 nA

Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 0.3 µA

VGS=4.5V, ID=4.5A 14 21
Drain-Source On-Resistance RDS(on) mΩ
VGS=2.5V, ID=4.0A 18 30

Forward Transconductance gFS VDS=10V, ID=4A 30 S

Gate Resistance Rg f=1 MHz, Open drain 3 Ω

Diode Characteristics
Continuous Body Diode Current IS 6.8 A

Diode Forward Voltage VSD VGS=0V, IS=4A 1.2 V

Reverse Recovery Time trr 10 ns

IF=3.4A, dIF/dt=200A/μs
Reverse Recovery Charge Qrr 6 nC

Dynamic Characteristics

Input Capacitance Ciss 686

Output Capacitance Coss VDS=8V,VGS=0V,f=1MHz 126 pF

Reverse Transfer Capacitance Crss 123

Total Gate Charge Qg 11
Gate-Source Charge Qgs VDS=10V,VGS=4.5V,ID=3A 1.8 nC

Gate-Drain Charge Qgd 3

Turn-On Delay Time td(on) 6.4

Turn-On Rise Time tr VDD=10V,VGS=10V, 12.6

RG=2.2Ω,ID=1A ns
Turn-Off Delay Time td(off) 21
Turn-Off Fall Time tf 2.6

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 SI2312B

Curve Characteristics

Fig.1 - Typical Output Characteristics Fig.2 - Transfer Characteristic

30 30
VDS=5V
VGS=4.5V,4V,3.5V,3V,2.5V,2V
25 25
Drain Current (A)

Drain Current (A)

20 20

15 VGS=1.5V
15

10 10
150℃
5 5
25℃

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5
Drain To Source Voltage (V) Gate To Source Voltage (V)

Fig.3 - RDS(ON) - VGS Fig.4 - RDS(ON) - ID

100 25
Drain-Source On-Resistance (mΩ)

ID=5A
Drain-Source On-Resistance (mΩ)

80 20 VGS=2.5V

VGS=4.5V
60 15

40 10

20 5
25℃

0 0
1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 25 30
Gate To Source Voltage (V) Drain Current (A)

Fig.5 - Capacitance Characteristics Fig.6 - Gate Charge

10000 4.5
VDS=10V
4 ID=3A
Gate-Source Voltage (V)

3.5
Capacitance (pF)

1000 Ciss
3
2.5
Coss 2
100 1.5
Crss
1
0.5
10 0
0 5 10 15 20 0 2 4 6 8 10 12
Drain To Source Voltage (V) Gate Charge (nC)

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 SI2312B

Curve Characteristics

Fig.7 - Normalized Threshold Voltage Fig.8 - Normalized On Resistance Characteristics

VGS(th) - Threshold Voltage Normalized

1.4 1.8
VGS=4.5V
1.2 1.6 ID= 5A

Normalized On Resistance
1.4
1.0
1.2
0.8 1.0
ID=250µA
0.6 0.8
0.6
0.4
0.4
0.2 0.2
0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature(℃) TJ - Junction Temperature(℃)

Fig.9 - IS - VSD Fig.10 - Drain Current

100 8
VGS=0V
7

6
Source Current (A)

10
Drain Current(A)

4
150℃
25℃
1 3
2

1
0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150
Source To Drain Voltage (V)
TA Temperature (℃)

Fig.11 - PD Dissipation

1.6
Power Dissipation (W)

1.2

0.8

0.4

0.0
0 25 50 75 100 125 150
TA Temperature (℃)

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 SI2312B

Curve Characteristics

Fig.12 - Safe Operation Area

100

RDS(on) Limited
10us
10
Drain Current (A)

100us

1ms
11
10ms
DC
100ms
0.1 1s
10s
TJ(MAX)=150℃
TA=25°C
Single Pulse
0.01
0.1 1 10 100
Drain-Source Voltage (V)

Fig.13 - Normalized Transient Thermal Impedance

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zth(J-A) Normalized Transient

TJ,PK=Ta+Pdm·Zθja·Rθja
1 RθJA=100°C/W
Thermal Resistance

0.1

0.01
PDM

0.001 Single Pulse TON

T

0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width(s)

Rev.4-1-01172024 5/6 MCCSEMI.COM

 SI2312B

Ordering Information

Device Packing

Part Number-TP Tape&Reel:3Kpcs/Reel

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