CM300HA-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
H-Series Module
300 Amperes/1200 Volts

A
W - M6 THD.
S P
(2 TYP.)

D F G C

Description:
Q V - DIA.
X - M4 THD. M H N Powerex IGBTMOD™ Modules
(2 TYP.) (4 TYP.)
B
are designed for use in switching
applications. Each module consists
U of one IGBT Transistor in a single
K K configuration with a reverse-
R
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
E offering simplified system assem-
J L bly and thermal management.
Features:
□ Low Drive Power
T
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
E C □ High Frequency Operation
(20-25kHz)
E □ Isolated Baseplate for Easy
G Heat Sinking
Applications:
□ AC Motor Control
Outline Drawing and Circuit Diagram
□ Motion/Servo Control
Dimensions Inches Millimeters Dimensions Inches Millimeters □ UPS
A 4.21 107.0 M 0.83 21.0 □ Welding Power Supplies
B 3.661±0.01 93.0±0.25 N 0.69 17.5 □ Laser Power Supplies
C 2.44 62.0 P 0.63 16.0 Ordering Information:
D 1.89±0.01 48.0±0.25 Q 0.51 13.0 Example: Select the complete
part module number you desire
E 1.42 Max. 36.0 Max. R 0.43 11.0
from the table below -i.e.
F 1.34 34.0 S 0.35 9.0 CM300HA-24H is a 1200V
G 1.18 30.0 T 0.28 7.0 (VCES), 300 Ampere Single
H 1.14 29.0 U 0.12 3.0 IGBTMOD™ Power Module.
J 0.98 Max. 25.0 Max. V 0.26 Dia. Dia. 6.5 Type Current Rating VCES
Amperes Volts (x 50)
K 0.94 24.0 W M6 Metric M6
CM 300 24
L 0.93 23.5 X M4 Metric M4

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 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM300HA-24H
Single IGBTMOD™ H-Series Module
300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM300HA-24H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current IC 300 Amperes
Peak Collector Current ICM 600* Amperes
Diode Forward Current IF 300 Amperes
Diode Forward Surge Current IFM 600* Amperes
Power Dissipation Pd 2100 Watts
Max. Mounting Torque M6 Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 400 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V – 2.5 3.4** Volts
IC = 300A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QG VCC = 600V, IC = 300A, VGS = 15V – 1500 – nC
Diode Forward Voltage VFM IE = 300A, VGS = 0V – – 3.4 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 60 nF
Output Capacitance Coes VGE = 0V, VCE = 10V, f = 1MHz – – 21 nF
Reverse Transfer Capacitance Cres – – 12 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time tr VCC = 600V, IC = 300A – – 500 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω – – 350 ns
Times Fall Time tf – – 350 ns
Diode Reverse Recovery Time trr IE = 300A, diE/dt = –600A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 300A, diE/dt = –600A/µs – 2.23 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.06 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.12 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.04 °C/W

186
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM300HA-24H
Single IGBTMOD™ H-Series Module
300 Amperes/1200 Volts

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)

600 600 5
15 12
Tj = 25oC VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)

500 Tj = 25°C Tj = 25°C

500
VGE = 20V Tj = 125°C 4 Tj = 125°C

COLLECTOR-EMITTER
400 400
11
3
300 300

10
2
200 200
9
100 1
100
7
8

0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 100 200 300 400 500 600
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 102
Tj = 25°C Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8 Cies
IC = 600A
COLLECTOR-EMITTER

101
6 Coes
IC = 300A
102
4
100
Cres
2
IC = 120A VGE = 0V
f = 1MHz
0 101 10-1
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 102 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

td(off)
IC = 300A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, t rr, (ns)

16
tf Irr VCC = 400V
td (on), tr, td (off), t f (ns)

td(on) VCC = 600V

t rr 12
102 102 101
8

VCC = 600V
tr VGE = ±15V 4
di/dt = -600A/µsec
RG = 1Ω
Tj = 25°C
Tj = 125°C
101 101 100 0
101 102 103 101 102 103 0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

187
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM300HA-24H
Single IGBTMOD™ H-Series Module
300 Amperes/1200 Volts

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.06°C/W Per Unit Base = R th(j-c) = 0.12°C/W

Zth = Rth • (NORMALIZED VALUE)

Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

188