MITSUBISHI IGBT MODULES

CM300HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

A
Q M H N V–DIA.(4 TYP.)
S

E C
E
D F CM G C

G
Description:
X–M4 THD. W–M6 THD. Mitsubishi IGBT Modules
P
(2 TYP.) (2 TYP.)
B are designed for use in switching
U applications. Each module consists
K K
of one IGBT in a single configura-
R tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
E baseplate, offering simplified sys-
J L tem assembly and thermal man-
agement.
Features:
T u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
E C
u High Frequency Operation
E u Isolated Baseplate for Easy
G Heat Sinking
Applications:
u AC Motor Control
Outline Drawing and Circuit Diagram
u Motion/Servo Control
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies
A 4.21 107.0 M 0.83 21.0
Ordering Information:
B 3.661±0.01 93.0±0.25 N 0.69 17.5 Example: Select the complete
C 2.44 62.0 P 0.63 16.0 part module number you desire
D 1.89±0.01 48.0±0.25 Q 0.51 13.0
from the table below -i.e.
CM300HA-24H is a 1200V
E 1.42 Max. 36.0 Max. R 0.43 11.0 (VCES), 300 Ampere Single IGBT
F 1.34 34.0 S 0.35 9.0 Module.
G 1.18 30.0 T 0.28 7.0 Type Current Rating VCES
H 1.14 29.0 U 0.12 3.0 Amperes Volts (x 50)
J 0.98 Max. 25.0 Max. V 0.26 Dia. Dia. 6.5 CM 300 24
K 0.94 24.0 W M6 Metric M6
L 0.93 23.5 X M4 Metric M4

Sep.1998
 MITSUBISHI IGBT MODULES

CM300HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM600HU-12H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 300 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 600* Amperes
Emitter Current** (Tc = 25°C) IE 300 Amperes
Peak Emitter Current** IEM 600* Amperes
Maximum Collector Dissipation (Tc = 25°C) Pc 2100 Watts
Mounting Torque, M6 Main Terminal – 1.96~2.94 N·m
Mounting Torque, M6 Mounting – 1.96~2.94 N·m
Mounting Torque, M4 Terminal – 0.98~1.47 N·m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V – 2.5 3.4** Volts
IC = 300A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V – 1500 – nC
Emitter-Collector Voltage VEC IE = 300A, VGE = 0V – – 3.4 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 60 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 21 nF
Reverse Transfer Capacitance Cres – – 12 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time tr VCC = 600V, IC = 300A – – 500 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω – – 350 ns
Times Fall Time tf – – 350 ns
Diode Reverse Recovery Time trr IE = 300A, diE/dt = –600A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 300A, diE/dt = –600A/µs – 2.23 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.06 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.12 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.04 °C/W

Sep.1998
 MITSUBISHI IGBT MODULES

CM300HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)

600 600 5
15 12
Tj = 25oC VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)

500 Tj = 25°C Tj = 25°C

500
VGE = 20V Tj = 125°C 4 Tj = 125°C

COLLECTOR-EMITTER
400 400
11
3
300 300

10
2
200 200
9
100 1
100
7
8

0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 100 200 300 400 500 600
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 102
Tj = 25°C 7 Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

5 CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8 Cies
IC = 600A 3
COLLECTOR-EMITTER

2 101
6 Coes
IC = 300A
102
4 7
5 100
Cres
3
2
IC = 120A 2 VGE = 0V

0 101 10-1
0 4 8 12 16 20 1.0 1.5 2.0 2.5 3.0 3.5 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 102 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

td(off)
IC = 300A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY TIME, t rr, (ns)

16
tf Irr VCC = 400V
td (on), tr, td (off), t f (ns)

td(on) VCC = 600V

t rr 12
102 102 101
8

VCC = 600V
tr VGE = ±15V 4
di/dt = -600A/µsec
RG = 1Ω
Tj = 25°C
Tj = 125°C
101 101 100 0
101 102 103 101 102 103 0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.1998
 MITSUBISHI IGBT MODULES

CM300HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.06°C/W Per Unit Base = R th(j-c) = 0.12°C/W
Zth = Rth • (NORMALIZED VALUE)
Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.1998
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