AON7410

30V N-Channel MOSFET

General Description Features

The AON7410 uses advanced trench technology and VDS (V) = 30V
design to provide excellent R DS(ON) with low gate charge. ID = 24A (VGS = 10V)
This device is suitable for use in DC - DC converters and RDS(ON) < 20mW (VGS = 10V)
Load Switch applications. RDS(ON) < 26mW (VGS = 4.5V)

RoHS and Halogen-Free Compliant 100% UIS Tested

100% Rg Tested

DFN 3x3 EP
Top View Bottom View D
Top View

S 1 8 D
S 2 7 D
S 3 6 D
G 4 5 D
G
Pin 1 S

Orderable Part Number Package Type Form Minimum Order Quantity

AON7410 DFN 3x3 EP Tape & Reel 5000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 24
Current B TC=100°C ID 15
Pulsed Drain Current C IDM 50 A
Continuous Drain TA=25°C 9.5
Current A TA=70°C IDSM 7.7
C
Avalanche Current IAS, IAR 17 A
Repetitive avalanche energy L=0.1mH C EAS, EAR 14 mJ
TC=25°C 20
PD
Power Dissipation B TC=100°C 8.3
W
TA=25°C 3.1
PDSM
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RqJA
Maximum Junction-to-Ambient A Steady-State 60 75 °C/W
Maximum Junction-to-Case B Steady-State RqJC 5 6 °C/W

Rev.12.1: October 2023 www.aosmd.com Page 1 of 6

 AON7410

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.4 1.8 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 50 A
VGS=10V, ID=8A 16 20
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 24 29 mW
VGS=4.5V, ID=7A 21 26
gFS Forward Transconductance VDS=5V, ID=8A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 440 550 660 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 110 143 pF
Crss Reverse Transfer Capacitance 33 55 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 4 4.9 W
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 7.8 9.8 12 nC
Qg (4.5V) Total Gate Charge 3.6 4.6 5.5 nC
VGS=10V, VDS=15V, ID=8A
Qgs Gate Source Charge 1.4 1.8 2.2 nC
Qgd Gate Drain Charge 1.3 2.2 3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2W, 3.2 ns
tD(off) Turn-Off DelayTime RGEN=3W 24 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/ms 7 9 11 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/ms 12 15 18 nC
A: The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RqJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RqJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. 150
E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev12: Jul-2011

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

Rev.12.1: October 2023 www.aosmd.com Page 2 of 6

 AON7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V VDS= 5V
4.5V
4V 40
40

30 30

ID(A)
ID (A)

3.5V
20 20

125°C
10 VGS= 3V 10
25°C

0 0
0 1 2 3 4 5 1 2 3 4 5

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

26 1.8

24 VGS= 10V
Normalized On-Resistance

VGS= 4.5V 1.6 ID= 8A

22
RDS(ON) (mW)

1.4 VGS= 4.5V

20 ID= 7A

1.2
18
VGS= 10V

16 1.0

14 0.8
0 5 10 15 IF=-6.5A,
20 dI/dt=100A/ms
25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

50 1E+02
ID= 8A
45 1E+01

40 1E+00

35 1E-01
RDS(ON) (mW)

IS (A)

30 125°C 1E-02 125°C

25 1E-03
20 25°C 1E-04
25°C
15 1E-05
10 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Rev.12.1: October 2023 www.aosmd.com Page 3 of 6

 AON7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

800
10
VDS= 15V
ID= 8A
8 600 Ciss

Capacitance (pF)
VGS (Volts)

6
400

4
200
Coss
2
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 300
TJ(Max)=150°C
10ms TC=25°C
10
100ms
200
Power (W)
ID (Amps)

1ms
1 DC
RDS(ON)
limited 100
0.1
TJ(Max)=150°C
TA=25°C
0.01 0
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note H) to-Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient

RqJC=6°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

Rev.12.1: October 2023 www.aosmd.com Page 4 of 6

 AON7410

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 30
Power Dissipation (W)

20

Current rating ID(A)

20
15

10
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

1000

TA=25°C

100
Power (W)

10

1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-
to-Ambient (Note H)

10
D=Ton/T In descending order
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T In descending order
RqJA=75°C/W
Thermal Resistance

1 TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RqJA=75°C/W 40
0.1

0.01 Single Pulse

Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)

Rev.12.1: October 2023 www.aosmd.com Page 5 of 6

 AON7410

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.12.1: October 2023 www.aosmd.com Page 6 of 6