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17a53df4dcb7dad0ad18f6da89bf3935
17a53df4dcb7dad0ad18f6da89bf3935
17a53df4dcb7dad0ad18f6da89bf3935
Features
K
■ Ultrafast switching
■ Low reverse recovery current
■ Reduces switching losses
A A
■ Low thermal resistance K K
1 Characteristics
TO-220AC 1.5
Rth(j-c) Junction to case °C/W
TO-220FPAC 4.0
Reverse leakage Tj = 25 °C 60
IR VR = 600 V µA
current Tj= 125 °C 70 800
Tj = 25 °C 2.9
VF Forward voltage drop IF = 15 A V
Tj = 125 °C 1.4 1.8
IF = 0.5 A,
30
Irr = 0.25 A, IR = 1 A
Reverse
trr Tj = 25 °C IF = 1 A, ns
recovery time
dIF/dt = - 50 A/µs, 50
VR = 30 V
IRM 7.5 9.0 A
IF = 15 A,
Sfactor Tj = 125 °C dIF/dt = - 200 A/µs, 0.15 -
VR = 400 V
Qrr 220 nC
Forward
tfr IF = 15 A, 200 ns
recovery time
Tj = 25 °C dIF/dt = 120 A/µs
Forward VFR = 1.1 x VFmax
VFP 6 V
recovery voltage
Figure 1. Conduction losses versus average Figure 2. Forward voltage drop versus
current forward current
P(W) IFM(A)
40 120
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 110 Tj=125°C
35 (Maximum values)
100
30 δ=1
90
80
25 Tj=125°C
70 (Typical values)
20 60
Tj=25°C
50 (Maximum values)
15
40
10 T 30
20
5
IF(av)(A) 10 VFM(V)
δ=tp/T tp
0 0
0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6
0.9 0.9
0.8 0.8
0.7 0.7
δ = 0.5
0.6 0.6 δ = 0.5
0.5 0.5
δ = 0.1 δ = 0.2
0.3 0.3
T δ = 0.1
T
0.2 0.2
Single pulse
0.1 0.1 tp(s)
tp(s) δ=tp/T
δ=tp/T tp Single pulse tp
0.0 0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Figure 5. Peak reverse recovery current Figure 6. Reverse recovery time versus dIF/dt
versus dIF/dt (90% confidence) (90% confidence)
IRM(A) trr(ns)
30 100
VR=400V VR=400V
IF=2 x IF(av)
Tj=125°C 90 Tj=125°C
25
80
IF=IF(av)
70 IF=0.5 x IF(av)
20
IF=0.5 x IF(av)
60 IF=IF(av) IF=2 x IF(av)
15 IF=0.25 x IF(av)
50
40
10
30
20
5
dIF/dt(A/µs) 10
dIF/dt(A/µs)
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
Figure 7. Reverse recovery charges versus Figure 8. Softness factor versus dIF/dt
dIF/dt (90% confidence) (typical values)
Qrr(nC) S factor
800 0.35
VR=400V IF=IF(av)
Tj=125°C VR=400V
700 Tj=125°C
IF=2 x IF(av) 0.30
600
500
IF=IF(av)
0.25
0.20
300
200
0.15
100
dIF/dt(A/µs) dIF/dt(A/µs)
0 0.10
0 200 400 600 800 1000 0 200 400 600 800 1000
Figure 9. Relative variation of dynamic Figure 10. Transient peak forward voltage
parameters versus junction versus dIF/dt (90% confidence)
temperature
VFP(V)
2.50
12
IF=IF(av)
2.25 IF=IF(av)
VR=400V 11 Tj=125°C
S factor Tj=125°C
2.00 10
1.75 9
8
1.50
7
1.25
6
1.00 5
0.75 4
IRM
0.50 3
2
0.25 Qrr Tj(°C) Reference: Tj=125°C
1 dIF/dt(A/µs)
0.00
0
25 50 75 100 125
0 100 200 300 400 500
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus
(90% confidence) reverse voltage applied
(typical values)
tfr(ns) C(pF)
260 1000
IF=IF(av) F=1MHz
240 VFR=1.1 x VF max. Vosc=30mV
Tj=125°C
220 Tj=25°C
200
180
160
140
100
120
100
80
60
40
20 dIF/dt(A/µs) VR(V)
0 10
0 100 200 300 400 500 1 10 100 1000
2 Package information
L4
L2 16.40 typ. 0.645 typ.
F L4 13.00 14.00 0.511 0.551
M L5 2.65 2.95 0.104 0.116
E
L6 15.25 15.75 0.600 0.620
G
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
L5
G1 2.4 2.7 0.094 0.106
D H 10 10.4 0.393 0.409
F1
L4 L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
F E
G1
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
G
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
3 Ordering information
4 Revision history
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