AP65SL600AH

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Rg & UIS Test D VDS @ Tj,max. 700V

▼ Fast Switching Characteristic RDS(ON) 0.6Ω
▼ Simple Drive Requirement ID 7A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP65SL600A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on- G
D
S
resistance and fast switching performance. It provides the designer TO-252(H)
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.

.
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage +20 V
3
ID@TC=25℃ Drain Current, VGS @ 10V 7 A
3
ID@TC=100℃ Drain Current, VGS @ 10V 4.4 A
1
IDM Pulsed Drain Current 18 A
dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) 50 V/ns
PD@TC=25℃ Total Power Dissipation 62.5 W
PD@TA=25℃ Total Power Dissipation 2 W
5
EAS Single Pulse Avalanche Energy 36.7 mJ
6
dv/dt Peak Diode Recovery dv/dt 15 V/ns
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 2 ℃/W
4
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W

Data & specifications subject to change without notice 1

201505201
AP65SL600AH

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 650 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A - - 0.6 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=10V, ID=2A - 5 - S
IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=2A - 20 32 nC
Qgs Gate-Source Charge VDS=480V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC
td(on) Turn-on Delay Time VDD=300V - 8 - ns
tr Rise Time ID=2A - 20 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 28 - ns
tf Fall Time VGS=10V - 23 - ns
Ciss Input Capacitance VGS=0V - 740 1184 pF
Coss Output Capacitance VDS=100V - 28 - pF
Crss Reverse Transfer Capacitance .
f=1.0MHz - 2 - pF
Rg Gate Resistance f=1.0MHz - 3.8 7.6 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=2A, VGS=0V - 0.8 - V
trr Reverse Recovery Time IS=7A, VGS=0V - 280 - ns
Qrr Reverse Recovery Charge dI/dt=50A/µs - 1.8 - µC

Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
4.Surface mounted on 1 in2 copper pad of FR4 board
5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω
6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP65SL600AH

16 8

o 10V o 10V
T C =25 C T C =150 C
9.0V 9.0V
8.0V 8.0V
ID , Drain Current (A)

ID , Drain Current (A)

12 6
7.0V
0.37Ω
7.0V V G =6.0V
8 4

4 2
V G =6.0V

0 0
0 8 16 24 32 0 4 8 12 16 20 24

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

580 4

I D =2A I D =2A
T C =25 C o V G =10V
560
Normalized RDS(ON)

3
RDS(ON) (mΩ)

540

520 2

.
500

480

460 0
5 6 7 8 9 10 -100 -50 0 50 100 150

o
V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C )

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
8 2

I D =250uA

1.6

6
Normalized VGS(th)
IS (A)

1.2

T j = 150 o C T j = 25 o C
0.8

2
0.4

0 0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150

V SD (V) o
T j , Junction Temperature ( C )

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP65SL600AH

12
f=1.0MHz
10000

I D =2A
10
V DS =480V
VGS , Gate to Source Voltage (V)

1000
C iss

0.37Ω
8

100

C (pF)
6

10
C oss
4 C rss

1
2

0 0.1
0 8 16 24 32 0 100 200 300 400 500 600 700

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

0.2
10
Operation in this area
limited by RDS(ON)
10us
ID (A)

0.1

0.1

100us
. 0.05

PDM
1 0.02
t
0.01 T

1ms Single Pulse

o Duty factor = t/T
T C =25 C 10ms Peak Tj = PDM x Rthjc + T C

Single Pulse 100ms

0.1
1s 0.01
1 10 100 DC 1000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

80 2

I D =1mA
PD , Power Dissipation (W)

1.6
Normalized BVDSS

60

1.2

40

0.8

20

0.4

0 0
0 50 100 150 -100 -50 0 50 100 150

o
T C , Case Temperature ( C ) T j , Junction Temperature ( o C)

Fig 11. Total Power Dissipation Fig 12. Normalized BVDSS v.s. Junction
Temperature

4
 AP65SL600AH
MARKING INFORMATION

Part Number

65SL600A

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year
WW：Week
SSS：Sequence

5
 ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-252

Millimeters
SYMBOLS
MIN NOM MAX
D
A2 2.10 2.30 2.50
A3 0.40 0.50 0.65
D1
B 0.40 0.70 1.00
E2 B1 0.50 0.85 1.20
D 6.00 6.50 6.80
D1 4.80 5.35 5.90
E3 E3 4.00 (ref.)
E1 F 2.00 2.63 3.05
F1 0.50 0.85 1.20
E1 5.00 5.70 6.30
E2 0.50 1.10 1.80
F1 e 2.3 (ref)
B1 C 0.35 0.525 0.70
F
B2 A1 0.00 － 0.25
B
B2 － － 1.25
e e L 0 90
0.90 1 34
1.34 1 78
1.78

A2

C
A1
A3 L

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.
3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option.

Draw No. M1-H3-G-v09

 TO-252

TO-252 FOOTPRINT：

6.8mm

7mm

4.6mm 2mm

3mm
.
0.6mm
1.0mm

ADVANCED POWER ELECTRONICS CORP. Draw No. M1-H3-G-v09