ISC130N20NM6

MOSFET
OptiMOSTM6Power-Transistor,200V PG-TSON-8-3
8
7

Features
5
6 6
7
5 8

•N-channel,normallevel
•Verylowon-resistanceRDS(on) Pin 1
2
4
•ExcellentgatechargexRDS(on)product(FOM) 3
4
3
2
•Verylowreverserecoverycharge(Qrr) 1

•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•MSL1classifiedaccordingtoJ-STD-020
•100%avalanchetested

Productvalidation Drain
Pin 5-8

FullyqualifiedaccordingtoJEDECforIndustrialApplications
Gate *1

Pin 4
Table1KeyPerformanceParameters
Source
Parameter Value Unit *1: Internal body diode Pin 1-3

VDS 200 V
RDS(on),max 13.0 mΩ
ID 88 A
Qoss 122 nC
QG 39 nC
Qrr 272 nC

Type/OrderingCode Package Marking RelatedLinks

ISC130N20NM6 PG-TSON-8 130N20N -

Final Data Sheet 1 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Final Data Sheet 2 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 88 VGS=10V,TC=25°C
- - 62 VGS=10V,TC=100°C
Continuous drain current 1)
ID A
- - 65 VGS=15V,TC=100°C
- - 9.8 VGS=10V,TA=25°C,RthJA=50°C/W2)
Pulsed drain current3) ID,pulse - - 352 A TC=25°C
Avalanche energy, single pulse 4)
EAS - - 270 mJ ID=40A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
- - 242 TC=25°C
Power dissipation Ptot W
- - 3.0 TA=25°C,RthJA=50°C/W2)
Operating and storage temperature Tj,Tstg -55 - 175 °C -

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case,
RthJC - 0.31 0.62 °C/W -
bottom
Thermal resistance, junction - case,
RthJC - - 20 °C/W -
top
Thermal resistance, junction - ambient,
RthJA - - 50 °C/W -
6 cm² cooling area2)

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet 3 Rev.2.0,2023-10-04
 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 200 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.0 3.7 4.5 V VDS=VGS,ID=135µA
- 0.1 1 VDS=160V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=160V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 10.0 13.0 VGS=10V,ID=50A
Drain-source on-state resistance RDS(on) mΩ
- 8.8 11.7 VGS=15V,ID=50A
Gate resistance RG - 3.9 - Ω -
Transconductance 1)
gfs 17 35 - S |VDS|≥2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 3000 3900 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance1) Coss - 480 620 pF VGS=0V,VDS=100V,f=1MHz
Reverse transfer capacitance 1)
Crss - 20 35 pF VGS=0V,VDS=100V,f=1MHz
VDD=100V,VGS=10V,ID=25A,
Turn-on delay time td(on) - 10 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=25A,
Rise time tr - 15 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=25A,
Turn-off delay time td(off) - 20 - ns
RG,ext=1.6Ω
VDD=100V,VGS=10V,ID=25A,
Fall time tf - 9 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 20 - nC VDD=100V,ID=25A,VGS=0to10V
Gate charge at threshold Qg(th) - 11.2 - nC VDD=100V,ID=25A,VGS=0to10V
Gate to drain charge 1)
Qgd - 7.8 11.7 nC VDD=100V,ID=25A,VGS=0to10V
Switching charge Qsw - 16.5 - nC VDD=100V,ID=25A,VGS=0to10V
Gate charge total 1)
Qg - 39 58 nC VDD=100V,ID=25A,VGS=0to10V
Gate plateau voltage Vplateau - 6.6 - V VDD=100V,ID=25A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 33 - nC VDS=0.1V,VGS=0to10V
Output charge 1)
Qoss - 122 162 nC VDS=100V,VGS=0V

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.0,2023-10-04
 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 88 A TC=25°C
Diode pulse current IS,pulse - - 352 A TC=25°C
Diode forward voltage VSD - 0.85 1.0 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time trr - 52 - ns VR=100V,IF=25A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 54 108 nC VR=100V,IF=25A,diF/dt=100A/µs
Reverse recovery time trr - 30 - ns VR=100V,IF=25A,diF/dt=1000A/µs
Reverse recovery charge 1)
Qrr - 272 544 nC VR=100V,IF=25A,diF/dt=1000A/µs

1)
Defined by design. Not subject to production test.
Final Data Sheet 5 Rev.2.0,2023-10-04
 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
250 100

200 80

150 60
Ptot[W]

ID[A]
100 40

50 20

0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 101
single pulse
1 µs 0.01
0.02
10 µs 0.05
102 0.1
0.2
100 µs 100 0.5

1 ms
101
ZthJC[K/W]
ID[A]

10-1
10 ms
100

DC 10-2
-1
10

10-2 10-3
100 101 102 103 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 6 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
350 30

15 V
300
25

250
20
6V
200

RDS(on)[mΩ]
7V
ID[A]

15 8V
10 V 10 V
150

10
15 V
100
8V

5
50 7V

6V
0 0
0 1 2 3 4 5 0 25 50 75 100 125 150 175 200
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
240 60

200 50
25 °C

160 40
RDS(on)[mΩ]
ID[A]

120 30

175 °C

80 20 175 °C

40 10
25 °C

0 0
0 2 4 6 8 10 12 0 3 6 9 12 15
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=50A;parameter:Tj

Final Data Sheet 7 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.5 5

2.0 4
RDS(on)(normalizedto25°C)

VGS(th)[V]
1.5 3
1350 µA

1.0 2
135 µA

0.5 1
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
25 °C, max
175 °C
175 °C, max

Ciss

103 102
C[pF]

IF[A]

Coss

102 101

Crss

101 100
0 25 50 75 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 8 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 15
40 V
100 V
160 V

25 °C 12

100 °C
101
150 °C
9

VGS[V]
IAV[A]

6
0
10

10-1 0
100 101 102 103 0 10 20 30 40 50 60
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=25Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

230

220

210
VBR(DSS)[V]

200

190

180
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 9 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

5PackageOutlines

DOCUMENT NO.
Z8B00187559
MILLIMETERS
DIMENSION
MIN. MAX. REVISION
A - 1.10 01
b 0.34 0.54
SCALE 10:1
b1 - 0.05
c 0.20 0 1 2mm
D 4.90 5.10
D1 4.25 4.45
E 5.90 6.10
E1 4.00 4.20 EUROPEAN PROJECTION
E2 3.14 3.34
E3 0.20 0.40
e 1.27
K2 (0.37)
L 0.60 0.80
L1 0.43 0.63 ISSUE DATE
L2 (0.25) 14.12.2017

Figure1OutlinePG-TSON-8,dimensionsinmm/inches

Final Data Sheet 10 Rev.2.0,2023-10-04

 OptiMOSTM6Power-Transistor,200V
ISC130N20NM6

RevisionHistory
ISC130N20NM6

Revision:2023-10-04,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2023-10-04 Release of final version

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Final Data Sheet 11 Rev.2.0,2023-10-04

Mouser Electronics

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