R

深圳市晶导电子有限公司 BU103T
www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor

◆Si NPN
◆RoHS COMPLIANT

1．APPLICATION
Fluorescent Lamp、Electronic Ballast、
Charger and Switch-mode power supplies

2．FEATURES

High voltage capability

Features of good high temperature

High switching speed
3．PACKAGE
TO-92
4．Electrical Characteristics 1 Base(B) 2 Collector(C) 3 Emitter(E)
4.1 Absolute Maximum Ratings
Tamb= 25℃ unless specified
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 650 V
Collector-Emittor Voltage VCEO 400 V
Emittor- Base Voltage VEBO 9 V
Collector Current IC 1.8 A
Ta=25℃ 0.8
Power Dissipation Ptot W
Tc=25℃ 19
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55～150 ℃
4.2 Electrical Parameter
Tamb= 25℃ unless specified
VALUE
PARAMETER SYMBOL TEST CONDITION UNIT
MIN TYP MAX
Collector-Base Voltage BVCBO IC=1mA,IE=0 650 V
Collector-Emittor Voltage BVCEO IC=1mA ,IB=0 400 V
Emittor-Base Voltage BVEBO IE=1mA,IC=0 9 V
Collector-Base Cutoff Current ICBO VCB=650V, IE=0 10 μA
Collector-Emittor Cutoff Current ICEO VCE=400V, IB=0 20 μA
Emittor-Base Cutoff Current IEBO VEB=9V, IC=0 10 μA
VCE=5V, IC=1mA 8
DC Current Gain hFE*
VCE=5V, IC=200mA 15 30
Collector-Emittor Saturation Voltage VCE sat* IC=1A, IB=0.5A 0.6 V
Base-Emittor Saturation Voltage VBE sat* IC=1A, IB=0.5A 1.2 V
Rising Time tr 0.7
Falling Time tf IC=250mA (UI9600) 0.9 μs
Storage Time ts 1.5 2.5
VCE=10V,IC=0.1A,
Typical Frequency fT f=1MHz
5 MHz

＊: Pulse test tp≤300μs,δ≤2%

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第1页 2013 版
 R

深圳市晶导电子有限公司 BU103T
www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor

5. Characteristic Curve

Fig1 Static Characteristic Fig2 hFE-IC

1.0 100
Ta=25℃ Ta=25℃
IB=50mA
IC (A)

hFE
0.5 10

IB=10mA

IB=5mA
VCE=5V
0 1
0 5 10 0.1mA 1mA 0.01 0.1 1 10
VCE (V) IC (A)

Fig3 VCEsat-IC Fig4 VBEsat-IC

10 1.5
Ta=25℃ Ta=25℃
IC/IB=2 IC/IB=2
1
VCEsat (V)

VBEsat (V)

1.0

0.1

0.01 0.5
0.1 1 4 0.1 1 5
Ic (A) Ic (A)

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第2页 2013 版
 R

深圳市晶导电子有限公司 BU103T
www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. Bipolar Junction Transistor

6．Package Dimentions(Unit：
：mm)

TO-
TO-92

Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel：0755-29799516 Fax：0755-29799515
第3页 2013 版