Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 FGA30N60LSD — 600 V, 30 A PT IGBT
November 2013

FGA30N60LSD
600 V, 30 A PT IGBT
Features General Description
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD
• High Input Impedance IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
• Low Conduction Loss
solar inverter, UPS applications where low conduction losses
Applications are the most important factor.

• Solar Inverter, UPS

Absolute Maximum Ratings

Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage  20 V
IC Collector Current @ TC = 25C 60 A
Collector Current @ TC = 100C 30 A
ICM (1) Pulsed Collector Current 90 A
IFSM Non-repetitive Peak Surge Current 150 A
60Hz Single Half-Sine Wave
PD Maximum Power Dissipation @ TC = 25C 480 W
Maximum Power Dissipation @ TC = 100C 192 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TL Maximum Lead Temp. for soldering
300 C
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 C/W
RJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGA30N60LSDTU FGA30N60LSD TO-3P Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 600 -- -- V
BVCES/ Temperature Coefficient of Breakdown VGE = 0 V, IC = 250 uA
-- 0.6 -- V/C
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ±250 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 uA, VCE = VGE 4.0 5.5 7.0 V
IC = 30 A, VGE = 15 V -- 1.1 1.4 V
VCE(sat) Collector to Emitter IC = 30 A, VGE = 15 V,
Saturation Voltage -- 1.0 -- V
TC = 125C
IC = 60 A, VGE = 15 V -- 1.3 -- V

Dynamic Characteristics
Cies Input Capacitance -- 3550 -- pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance -- 245 -- pF
f = 1 MHz
Cres Reverse Transfer Capacitance -- 90 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 18 -- ns
tr Rise Time -- 46 -- ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 30 A, -- 250 -- ns
tf Fall Time RG = 6.8 , VGE = 15 V, -- 1.3 2.0 us
Inductive Load, TC = 25C
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 21 -- mJ
td(on) Turn-On Delay Time -- 17 -- ns
tr Rise Time -- 45 -- ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 30 A, -- 270 -- ns
tf Fall Time RG =6.8 , VGE = 15 V, -- 2.6 -- us
Inductive Load, TC = 125C
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 36 -- mJ
Qg Total Gate Charge -- 225 -- nC
Qge Gate-Emitter Charge VCE = 300 V, IC = 30 A, -- 30 -- nC
VGE = 15 V
Qgc Gate-Collector Charge -- 105 -- nC
Le Internal Emitter Inductance Measured 5mm from PKG -- 7 -- nH

©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Parameter Conditions Min. Typ. Max Unit

VFM IF = 15 A TC = 25 C - 1.8 2.2 V
IF = 15 A TC = 125 C - 1.6 - V
IRM VR = 600 V TC = 25 C - - 100 A
trr IF =1 A, diF/dt = 100 A/s, VR = 30 V TC = 25 C - - 35 ns
IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C - - 40 ns
ta IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C - 18 - ns
tb TC = 25 C - 13 - ns
Qrr TC = 25 C - 27.5 - nC

©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Typical Performance Characteristics

Figure 1.Typical Output Characteristics Figure 2. Typical Saturation Voltage

Characteristics
90 90
o o
TC = 25 C VGE = 20V TC = 125 C VGE = 20V
15V 15V
12V 12V
Collector Current, IC [A]

Collector Current, IC [A]

10V 10V
8V 8V
60 60

30 30

0 0
0 1 2 3 4 0 1 2 3 4
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer characteristics

Characteritics
90 90
Common Emitter Common Emitter
VGE = 15V VCE = 20V
o o
TC = 25 C TC = 25 C
Collector Current, IC [A]

Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
60 60

30 30

0 0
0 1 2 3 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge
Temperature at Variant Current Level
1.4
Common Emitter 20
VGE = 15V Common Emitter
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

o
60A T = 25 C
C
16
1.2

12
1.0 30A

8
IC = 15A

0.8
4 60A
30A
IC = 15A
0
0.6
25 50 75 100 125 0 4 8 12 16 20
o
Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Typical Performance Characteristics (Continued)

Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance characteristics

20 13000
Common Emitter 10000
o
TC = 125 C
Collector-Emitter Voltage, VCE [V]

Cies
16

Capacitance [pF]
Common Emitter
Coes
12 VGE = 0V, f = 1MHz
o
1000 TC = 25 C

Cres
8
30A 60A

4
IC = 15A 100

0 50
0 4 8 12 16 20 0 5 10 15 20 25 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics

15 300
Common Emitter
Ic MAX (Pulsed)
IC = 30A
100 50s
Gate-Emitter Voltage, VGE [V]

o
12 TC = 25 C
Vcc = 100V Ic MAX (Continuous)
Collector Current, Ic [A]

100s

9 300V
10
200V 1ms

1 Single Nonrepetitive
o DC Operation
Pulse TC = 25 C
3 Curves must be derated
linearly with increase
in temperature
0 0.1
0 50 100 150 200 250 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Load Current Vs. Frequency Figure 12. Turn-On Characteristics vs.
Gate Resistance
80
200
Vcc = 400V
70 load Current : peak of square wave

60 100
Collector Current [A]

Switching Time [ns]

50 tr

40
Common Emitter
30 td(on)
VCC = 400V, VGE = 15V
IC = 30A
20 o
TC = 25 C
Duty cycle : 50%
o
10 o TC = 125 C
Tc = 100 C
10
Powe Dissipation = 192W 0 10 20 30 40 50
0
Gate Resistance, RG []
0.1 1 10 100 1000
Frequency, f [kHz]

©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Typical Performance Characteristics (Continued)

Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs.
Gate Resistance Collector Current

3000 500
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
o
TC = 125 C

Switching Time [ns]

Switching Time [ns]

1000 tf 100 tr

td(off) Common Emitter

VCC = 400V, VGE = 15V td(on)
IC = 30A
o 10
TC = 25 C
o
TC = 125 C
100
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]

Figure 15. Turn-Off Characteristics vs. Figure 16. Switching Loss vs

Collector Current Gate Resistance

6000
500
tf Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
o
100 TC = 25 C
Switching Time [ns]

Switching Loss [mJ]

o
TC = 125 C Eoff
1000
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
o 10
td(off) TC = 125 C

Eon

100
20 30 40 50 60 70 80 1
5 10 15 20 25 30 35 40 45 50
Collector Current, IC [A]
Gate Resistance, RG []
Figure 17.Switching Loss vs Collector Current Figure 18. Turn-Off Switching
200
SOA Characteristics
100

100
Eoff
Collector Current, IC [A]
Switching Loss [mJ]

10

Eon
10
1
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
Safe Operating Area
o o
TC = 125 C VGE = 15V, TC = 125 C
0.1 1
10 20 30 40 50 60 70 80 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]

©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Figure 19. Transient Thermal Impedance of IGBT

0.5
Thermal Response [Zthjc]

0.1
0.2

0.1

0.05

0.01
0.02
PDM
t1
0.01 t2
Duty Factor, D = t1/t2
single pulse Peak Tj = Pdm x Zthjc + TC

1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]

Figure 20. Forward Voltage Drop Figure 21. Reverse Current

1E-4
100
REVERSE CURRENT, IR [A]
FORWARD CURRENT, IF [A]

1E-5 o
TC = 125 C

10
o
1E-6 TC = 75 C
o
TC=125 C

1E-7

1 o
TC=75 C o
TC = 25 C
1E-8
o
TC=25 C

1E-9
0.1 0 100 200 300 400 500 600
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
REVERSE VOLTAGE, VR [V]
FORWARD VOLTAGE, VF [V]

Figure 22. Reverse Recovery Time

200
190
IF = 15A
REVERSE RECOVERY TIME, trr [ns]

180
170
160
150
140
o
130 TC = 125 C
120
110
100
90
80 o
TC = 75 C
70
60
50
40
30 TC = 25 C
o

20
10
0
100 200 300 400 500

diF/dt [A/s]

©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
Mechanical Dimensions

Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003

©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 600 V, 30 A PT IGBT — 600 V, 30 A PT IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Sync-Lock™
AX-CAP®* FRFET® ®
®*
®
BitSiC™ Global Power ResourceSM PowerTrench
Build it Now™ GreenBridge™ PowerXS™
TinyBoost®
CorePLUS™ Green FPS™ Programmable Active Droop™
® TinyBuck®
CorePOWER™ Green FPS™ e-Series™ QFET
TinyCalc™
CROSSVOLT™ Gmax™ QS™
TinyLogic®
CTL™ GTO™ Quiet Series™
TINYOPTO™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyPower™
DEUXPEED® ISOPLANAR™ ™ TinyPWM™
Dual Cool™ Marking Small Speakers Sound Louder
TinyWire™
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™
TranSiC™
EfficentMax™ MegaBuck™ SignalWise™
TriFault Detect™
ESBC™ MICROCOUPLER™ SmartMax™
TRUECURRENT®*
MicroFET™ SMART START™
® SerDes™
MicroPak™ Solutions for Your Success™
Fairchild® MicroPak2™ SPM®
Fairchild Semiconductor ® MillerDrive™ STEALTH™
MotionMax™ SuperFET® UHC®
FACT Quiet Series™
® mWSaver ® SuperSOT™-3 Ultra FRFET™
FACT
OptoHiT™ SuperSOT™-6 UniFET™
FAST®
OPTOLOGIC ®
SuperSOT™-8 VCX™
FastvCore™
OPTOPLANAR ® SupreMOS ® VisualMax™
FETBench™
SyncFET™ VoltagePlus™
FPS™
XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause
and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or
instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I66

©2008 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FGA30N60LSD Rev.C1
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

© Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com

1
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

onsemi:
FGA30N60LSDTU