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This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SC1384
Silicon NPN epitaxial planar type

For low-frequency power amplification and driver amplification


Complementary to 2SA0684

 Features  Package
 Low collector-emitter saturation voltage VCE(sat)  Code
 Complementary pair with 2SA0684 TO-92L-A1
 Pin Name
 Absolute Maximum Ratings Ta = 25°C 1. Emitter
Parameter Symbol Rating Unit 2. Collector

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3. Base
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V

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Emitter-base voltage (Collector open) VEBO 5 V

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Collector current IC 1 A

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Peak collector current ICP 1.5 A

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Collector power dissipation PC 1 W

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Junction temperature Tj 150 °C

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Storage temperature Tstg –55 to +150 °C
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 Electrical Characteristics Ta = 25°C±3°C


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Parameter Symbol Conditions Min Typ Max Unit


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Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 V


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Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V


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Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 5 V


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Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mA


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hFE1 VCE = 10 V, IC = 500 mA 85 340


Forward current transfer ratio *1 
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hFE2 VCE = 5 V, IC = 1 A 50
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Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V


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Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V


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Transition frequency fT VCB = 10 V, IE = –50 mA, f = 200 MHz 200 MHz


M

Collector output capacitance


Cre VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
ed

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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2. *1: Pulse measurement


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*2: Rank classification


Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340

Publication date : October 2008 SJC00421AED 1


This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1384

2SC1384_PC-Ta 2SC1384_IC-VCE 2SC1384_IC-IB


PC  Ta IC  VCE IC  IB
1.2 1.50 1.2
Ta = 25°C VCE = 10 V
Ta = 25°C
Collector power dissipation PC (W)

1.0 1.25 1.0


IB = 10 mA
9 mA

Collector current IC (A)


Collector current IC (A)
8 mA
0.8 1.00 0.8
7 mA
6 mA
0.6 0.75 5 mA 0.6
4 mA
0.4 0.50 3 mA 0.4
2 mA
0.2 0.25 0.2
1 mA

0 0 0
0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10 12

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Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

2SC1383_VCE(sat)-IC 2SC1383_VBE(sat)-IC 2SC1384_hFE-IC


VCE(sat)  IC VBE(sat)  IC hFE  IC

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10 100 600
Collector-emitter saturation voltage VCE(sat) (V)

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IC / IB = 10 IC / IB = 10 VCE = 10 V
(V)

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500

FE

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1 10
Base-emitter saturation voltage V

Ta = 75°C

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400

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25°C

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25°C Ta = −25°C
−25°C

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0.1 1 300

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Ta = 75°C
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200
25°C
Forward
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0.01 0.1
−25°C
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100
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0.001 0.01 0
typ s f

0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10


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Collector current IC (A) Collector current IC (A) Collector current IC (A)


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2SC1384_fT-IE 2SC1384_Cob-VCB 2SC1384_VCER-RBE


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fT  IE Cob  VCB VCER  RBE


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200 50 120
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nc ce/C (pF)

VCB = 10 V IE = 0 IC = 10 mA
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Ta = 25°C
(V)

f = 1 MHz Ta = 25°C
e t is
ob

Ta = 25°C
D

100
CER
Transition frequency fT (MHz)

160 40
(Common base, input openacircuited)

Collector-emitter voltage V
en an

(Resistor between B and E)

80
int ten

120 30
ma ain
Collector output capacitance
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60

80 20
40
ed
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40 10
(p

20

0 0 0
−1 −10 −100 1 10 100 0.1 1 10 100
Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ)

2 SJC00421AED
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC1384

2SC1384_ICEO-Ta 2SC1384_ASO
ICEO  Ta Safe operation area
104 10
VCE = 10 V Single pulse
Ta = 25°C

ICP
103 1 I

Collector current IC (A)


C t = 10 ms
ICEO (Ta = 25°C)
ICEO (Ta)

t=1s
102 0.1

10 0.01

1 0.001
0 40 80 120 160 0.1 1 10 100

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Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

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SJC00421AED 3
4
2SC1384

(1.27)
(p
TO-92L-A1

0.7 ±0.1
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0.45 −0.1
+0.2
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1
ma ain

2
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5.9 ±0.2

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3
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+0.3
0.7 −0.2
typ isc
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13.5 ±0.5 8.6 ±0.2
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(3.2) i

(1.27)
ma nu

2.54 ±0.15
int ed
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SJC00421AED
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0.45 −0.1
+0.2
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4.9 ±0.2
This product complies with the RoHS Directive (EU 2002/95/EC).

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d t ife
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Unit: mm

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e)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

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Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

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defect which may arise later in your equipment.

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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

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mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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20080805
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