JSS MAHAVIDYAPEETHA

JSSATE Campus, Uttarahalli – Kengeri Main Road, Bangalore – 560060

Phone: 080-28611902, 28612797 Fax: 080-28612706 www.jssateb.ac.in
Affiliated to Visvesvaraya Technological University, Belagavi, Karnataka, INDIA
Approved by All India Council for Technical Education, New Delhi

DEPARTMENT OF PHYSICS

APPLIED PHYSICS FOR CSE STREAM (BPHYS202)

LABORATORY MANUAL

FOR

II SEMESTER B.E COURSES

Prepared by
DEPARTMENT OF PHYSICS
JSS ACADEMY OF TECHNICAL EDUCATION BENGALURU - 60
(Affiliated To VTU – Belgaum)

NAME OF THE STUDENT: --------------------------------------------------------------------

BRANCH: --------------------------------------------------------------------

UNIVERSITY SEAT NO.: ---------------------------------------------------------------------

SEMESTER & SECTION: ---------------------------------------------------------------------

BATCH: --------------------------------------------------------------------

-1-
 TABLE OF CONTENTS

Experiment Page
Title of the experiment
No. No.

1. Wavelength of LASER using Grating 04

2. Numerical Aperture using optical fiber 08

3. Charging and Discharging of a Capacitor 11

4. Transistor Characteristics 16

5. Photo-Diode Characteristics 21

6. Series and Parallel LCR Circuits 25

7. Magnetic Field at any point along the axis of a circular coil 31

8. Fermi Energy of COPPER 35

9. Planck’s Constant using LEDs 38

10. Band gap of a semiconductor 41

11. Projectile motion using spread sheet (Demonstration) 44

Radius of curvature of Plano convex lens using Newton’s

12. 47
Rings (Beyond syllabus)

-2-
 JSS MAHAVIDYAPEETHA
JSS ACADEMY OF TECHNICAL EDUCATION,
BENGALURU - 60
Department of Physics

Teaching staff

1. Dr. Nityanand Choudhary, M.Sc., Ph.D.; Professor

2. Dr. Prasanna Kumar S, M.Sc., M. Phil., Ph.D.; Professor

3. Dr. Shashidhar R, M.Sc., Ph.D.; Associate Professor & Head

4. Dr. Abhilasha Singh., M.Sc., Ph.D.; Assistant Professor

5. Ms. Sushma K.C., MSc. (Ph.D.) Assistant Professor
6. Mr. Mohanakumara LB., M.Sc. (Ph.D.); Assistant professor

Non-teaching staff
1. Ms. Jyothi H.R, B.Sc. B.Ed.; Lab Instructor
2. Mr. Shivamurthy; Lab Helper
3. Ms. Shanthamma; Peon

Faculty Lab In charge:

Mr. Mohanakumara LB,
Assistant Professor

Lab Instructor:
Jyothi H.R.

-3-
 1. WAVELENGTH OF SEMICONDUCTOR LASER USING
LASER DIFFRACTION GRATING
Aim: To determine the wavelength ‘λ’ of the Laser light using diffraction grating.
Apparatus: Diffraction grating (500 LPI and 300 LPI), Diode LASER source, image screen,
meter scale.
Formula: Wavelength ‘λ’ of given LASER source is calculated knowing the grating
d sin  m
constant ‘d’ for mth order diffraction using equation   .
m
Here, m is the order of the spots
λ is the wavelength of the laser, nm
d is the grating constant, m and
θm is the angle of diffraction
If N is the number of lines per unit length of the grating, then grating constant, d is
determined using the formula

1
d   , m
N
If f is the distance between the grating and the screen, Xm is the distance of the mth spot from
the central maximum, then the angle θm can be measured using

 xm 
 m  tan1 
 f 
Left Right

7 2 1 1 2 7
Order-m

2x2
2x1 Image Screen

Left Right
f
θm– Angle of diffraction

DIFFRACTION GRATING

LASER Source

-4-
Observations:
The grating constant (d) is determined using the formula
1
d   , m        m
N
Where N is number of Lines Per Inch of the grating i.e.,

 300  -1  500  -1
Case 1: N=300 LPI=  -2 
m , Case 2: N=500 LPI=  -2 
m
 2.54  10   2.54  10 

Then the wavelength (λ) of the laser

d sin  m
 , nm
m

Table-1, Diffraction angle for different order f =100 cm

500 LPI grating, f =100 cm

Order  xm  d sin  m
 m  tan -1    (nm)
 f  Sin θm
m xm 2xm
(cm) m
(cm)
1

Average λ = nm

-5-
 Table-2, Diffraction angle for different order f =100 cm

300 LPI grating, f =100 cm

 xm  Sin θm d sin  m
Order xm 2xm  m  tan -1    (nm)
m (cm) (cm)  f  m

Average λ = nm

Result: The average wavelength (λ) of the given laser source from calculation is found

to be 𝜆 =---------------------------------- nm.

-6-
-7-
 2. Numerical Aperture and Acceptance angle of an
Optical fiber
AIM: To determine the Acceptance angle and Numerical aperture of the given optical fiber.

APPARATUS: Laser source, Optical fiber, Screen, Scale.

PRINCIPLE: The Sine of the acceptance angle of an optical fiber is known as the numerical
aperture of the fiber. The acceptance angle can also be measured as the angle spread by the light
signal at the emerging end of the optical fiber. It represents the light gathering capacity of an
optical fiber. Therefore, by measuring the diameter of the light spot on a screen and by knowing
the distance from the fiber end to the screen, we can measure the acceptance angle and there by
the numerical aperture of the fiber.

FORMULA: The Acceptance angle,  0  tan 1 

D
 , where D – the diameter of the outer edge
 2L 
bright circle (or inner edge of the dark circle) formed on screen, and L – the distance between the
optical fiber end and screen and the Numerical Aperture, NA  sin 0 .

DIAGRAM:
Screen
a

Laser source Optical fiber

cable c d

-8-
 Tabular column:

Trail Diameter D L Acceptance angle Numerical aperture

No. D
 0  tan  
1

(cm) (cm)  2L  NA  sin 0

1 1.0
2 1.5
3 2.0
4 2.5
5 3.0
Mean: Mean:

RESULT: The Angle of acceptance  0 and Numerical aperture NA of the given optical fiber

Are found to be  0 = degree and NA =

-9-
- 10 -
 3. DIELECTRIC CONSTANT BY RC CHARGING
AND DISCHARGING

Aim: To determine the Dielectric constant (K) of a given dielectric material by the method of
charging & discharging of a capacitor.
Apparatus: Battery, Capacitors, Resistors, Voltmeter, Timer and Connecting wires.
Formula: The dielectric constant (K) of the given dielectric material is calculated using the
relation
d T1/ 2 10 6
K
0.693  0 A R

Where, d is the thickness of the dielectric slab in m,

T1/2 or P is the time at which the charging and discharging voltages are equal,

0 is the relative permittivity = 8.85x10-12 F/m, and

A is the area of the dielectric slab in m2

Circuit diagram: Charging and discharging of a Capacitor

Re-setter
Halt-start
S2
X A
M N S P
R
Charge
2 +
Ba S1 C +
1 3
- v
Discharge -

B T Q
Y

Where, Ba = Battery, S1 and S2 = Dual switches, C = Electrolytic Capacitor, and R = Resistor.

- 11 -
Dimensions of capacitors

Table-1

Capacitor C1 C2 C3

Length (mm) 47 114 183

Breadth (mm) 5 5 6

Thickness of dielectric (separation) (mm) 0.075 0.075 0.075

Graph: Charging and discharging of capacitor

5.0
4.5
4.0
3.5
Charge Mode Voltage, V
3.0 Discharge Mode Voltage, V
Voltage V

2.5
T1/2
2.0
1.5
1.0
0.5
0.0
0 10 20 30 40 50 60 70 80 90 100 110
Time T ,s

- 12 -
Observations:

C1 = μF R =100 KΩ C2 = μF R =100 KΩ C3 = μF R =100 KΩ

Time T
in Charge Discharge Charge Discharge Charge Discharge
seconds Mode Mode Mode Mode Mode Mode
V V V V V V

0 0 0 0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100

- 13 -
Calculations:

d T1 / 2 106
K1  
0.693  0 A R

d T1 / 2 106
K2  
0.693  0 A R

d T1 / 2 106
K3  
0.693  0 A R

Result: The estimated values of T1/2, and the dielectric constants (K) of the dielectric material

are found to be

Parameters C1 C2 C3

T1/2 (sec)

Dielectric constant (K) K1= K2= K3=

- 14 -
- 15 -
 4. CHARACTERISTICS OF TRANSISTOR
Aim: To draw input, output & transfer characteristics of a given transistor & hence to determine
current gain values in common emitter, common base and common collector configuration.
Apparatus: Given transistor (NPN), variable DC power supplies (0-1V & 0-10V). DC micro
ammeter (0-200A), DC milli ammeter (0-10mA), DC voltmeter (0-1V & 0-10V), connecting
wires.
I C
Formula: 1) Current Gain in CE mode,    slope
I B

2) Current Gain in CB mode,  
1 

1
3) Current Gain in CC mode,  
1 

Circuit diagram:
IB IC
+
- _ +
R μA mA
C
VBB VBE + VCE +
VCC
μA NPN
B
- -
E

Earth

- 16 -
 Where, VBB and VCC = Power Supply
VBE = Base emitter voltage
VCE = Collector emitter voltage
B = Base, C = collector, E = emitter
IB = Base current, and IC = Collector current.

Observations:

I. Input Characteristics:

VCE = 1 Volt VCE = 3 Volt

VBE in VBE in
IB in A IB in A
volts volts
0 0
0.1 0.1
0.2 0.2
0.3 0.3
0.4 0.4
0.5 0.5
0.6 0.6
0.7 0.7
0.8 0.8

II. Output Characteristics:

IB = 50  A IB = 75  A

VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA) VCE (V) IC (mA)

0 1.0 0 1.0

0.1 2.0 0.1 2.0

0.2 3.0 0.2 3.0

0.3 4.0 0.3 4.0

0.4 5.0 0.4 5.0

0.5 6.0 0.5 6.0

- 17 -
 0.6 7.0 0.6 7.0

0.7 8.0 0.7 8.0

0.8 9.0 0.8 9.0

0.9 10.0 0.9 10.0

III. Transfer Characteristics:

VCE = 1 Volt
IB(  A) IC(mA)
0
10
20
30
40
50
60
70
80
90
100

- 18 -
 Nature of graphs

140

120 IB A(VCE=1V)
8 10
IB A(VCE=3V)
100
7
IB=75A 8
80 6

6
IB ()
60 5

IC(mA)
IC (mA)
40 4
IB=50A 4
3
20
2
2
0
1 0
VKNEE=0.597 V
-20
0
0.0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 0 20 40 60 80 100
Voltage VBE, V VCE, V IB(A)

1. Input Characteristics 2. Output Characteristics 3. Transfer Characteristics

Calculation: Input Resistance Rin =BC/AB= KΩ

Result: The input, output & transfer characteristics of a given NPN transistor in
common emitter are studied and the estimated values of input resistance, Knee voltage, current
gain (,  & γ) are as follows.
VCE= 1volt
1
Input resistance, Rin = = kΩ
𝑆𝑙𝑜𝑝𝑒

Knee voltage, VKnee = V

VCE= 3volt
1
Input resistance, Rin = = kΩ
𝑆𝑙𝑜𝑝𝑒

Knee voltage, VKnee = V

Current gain (CE mode)  =

(CB mode)  =

(CC mode) γ =

- 19 -
- 20 -
 5. PHOTODIODE CHARACTERISTICS
Aim: Study of I-V characteristics in reverse bias, variation of photocurrent as a function of reverse
voltage & intensity as well as estimation of responsivity (Rλ) and quantum efficiency (QE) of Ga-
As based photo diode (PD) in the visible range
Apparatus: Photodiode experimental setup consisting of: 0-3 V regulated power supply, 0-2 mA
digital dc current meter, 0-20 V digital dc volt meter, white light LED (λLED=575 nm) module, and
photo diode LED type. A transistor drive for LED is used. The LED power (P LED=VLED ILED) is
directly read from the dial marked on the LED power supply.
Circuit diagram:
0-2mA
+5V
2.2K
LED
IPD
0-3V VPD
PD
100K

220

LED
Calibrated Current
in mW 500
Adjustment

Figure-1: Circuit Connections

- 21 -
 Table-1

VPD= -1V

PLED(mW) IPD(mA)

10

20

30

40

50

where Rrev or RPD=(VPD/IPD) , Ω and VPD=1V

1500

1000
IPD(µA)

500

0
0 10 20 30 40 50 60
PLED (mW)

Figure-1: Variation of PD current with LED power (VPD=-1V)

Responsivity (Rλ) is calculated using equation-1
Rλ(expt) =Slope =
𝑅𝜆(𝑒𝑥𝑝) 𝑆𝑙𝑜𝑝𝑒 𝐴
Rλ(exact) = ( ) = ( 0.66 ) =
0.66 𝑊

- 22 -
 Table-2

IPD (µA)
VPD
PLED=10 mW PLED=30 mW PLED =50 mW
(V)

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

-3.5

-4.0

VPD, V
0
-2.0 -1.5 -1.0 -0.5 0.0
-100
-200
-300
IPD, (A)

-400

PLED=10mW -500
PLED=21mW -600
PLED=50mW -700
-800
-900

Figure 2-: I-V characteristic curves of PD

Results:
1. From I–V characteristics of photo diode in reverse bias, it is observed that the photocurrent vary
as a function of voltage and intensity of LED. The equal spacing between characteristic curves
indicates linearity of photo current with light intensity, as indicated in the plot.
2. Theoretical and experimental value of Responsivity (Rλ) at 575nm are found to be ---------
& ---------A/W respectively.

- 23 -
- 24 -
 6. SERIES AND PARALLEL LCR RESONANCE
Aim: To study the frequency response of series and parallel LCR circuit, and hence to determine
bandwidth, resonance frequency and quality factor of the circuit in series and parallel combination.
Apparatus: Audio frequency oscillator, ac milliammeter, standard inductance coils, standard
resistors and capacitors, patch cards, etc.
Formula

𝟏
𝒇𝒓 = Hz (𝟏)
𝟐𝝅√(𝑳𝑪)
𝒇𝒓 Where,
Q= (𝟐)
𝜟𝒇
fr= Resonance frequency, Hz
𝜟𝒇 = 𝒇𝟐 − 𝒇𝟏 Hz (𝟑)
L = Inductance, H
𝟏 𝑳
𝑸(𝒔𝒆𝒓𝒊𝒆𝒔) = √ (𝟒) C = Capacitance, μF
𝑹 𝑪
R = Resistor, Ω
𝑪
𝑸(𝑷𝒂𝒓𝒂𝒍𝒍𝒆𝒍) = 𝑹√ (𝟓) f = Band width, Hz
𝑳
f1 and f2 = frequencies at
rms value of current, Hz

Where: R = Resistor, Ω

C = Capacitor, μF

L1 = Inductance, H

mA = milliammeter

- 25 -
 Figure 1: LCR Series Resonance Circuit

M N
mA

Oscillator
C

Graph for Series Resonance circuit

6 I Max (5.798 mA)

Current I (mA)
5
I Max/1.41(4.11 mA)
4
Current I (mA)

1
fr=4.4 kHz
f1=3.63 kHz f2=5.42 kHz
0
0 2 4 6 8 10
Frequency f (kHz)

- 26 -
 Parallel Resonance:

Where: R = Resistor, Ω
C = Capacitor, μF
L =Unknown
Inductance, and
mA = milliammeter

M N

Oscillator C

Graph of Parallel Resonance Cicuit

5
CurrentImA

4
Current I (mA)

1 Iminx1.41=0.66 mA
fr=4.6 kHz, I =0.47 mA,
min
f1=4.25 kHz f2=4.86 kHz
0
0 2 4 6 8 10
Frequency f (kHz)

Graph for parallel resonance circuit

- 27 -
Tabular Column:

Current in mA
Frequency(KHz)
Series LCR Parallel LCR
circuit circuit

- 28 -
Result:
The frequency response of given series and parallel LCR circuit is studied and obtained values
are tabulated below.

For series resonance For parallel resonance

1. fr =-----------------------------------Hz from Theory
2. fr = -------kHz 2. fr =-------------------------------------kHz
from graph from graph
3. Band width =-----kHz 3. Band width =---------kHz
from graph from graph
4.Quality factor= 4.Quality factor=
From Theory From Theory
5. Quality factor------ Quality factor= -----------
by graph by graph

- 29 -
- 30 -
 7. MAGNETIC FIELD INTENSITY ALONG THE AXIS OF A
CIRCULAR COIL CARRYING CURRENT
(BY DEFLECTION METHOD)

Aim: Determination of Magnetic field intensity along the axis of a circular coil carrying current (by
deflection method)
APPARATUS: Stewart and Gee type tangent galvanometer, battery eliminator, commutator, ammeter,
rheostat, and connecting wires.

THEORY:
The field B along the axis of a current carrying coil is given by

2𝜋𝑛𝑟 2 𝐼
𝐵= 7 2 − − − − − −(1)
10 (𝑥 + 𝑟 2 )3/2

Where, x is the distance of the point from the center of the coil.

r=radius of the coil

n= number of turns of coil

I= current in the coil

If the magnetic needle make an angle () with BH in the equilibrium position. According to tangent law
:

B tan 

Therefore,

B =BH tan  ............(2)

Here, BH is constant at the place of experiment

- 31 -
OBSERVATIONS:

No. of Turns =------------

Current = -------------mA

BH = 3.9x10-5T (at Bangalore)

- 32 -
Nature of Graph

B=𝐵𝐻 𝑡𝑎𝑛𝜃𝑋10−5 T

Bmax

Bmax/ 2

x=-12 x=+12
Radius of coil in cm

Table: Observation for variation of magnetic field with distance x

Sl. Distance Deflection on the Deflection on the

No of the left side of the coil right side of the
Mean =(1+2+3+4)/4

needle in degree coil in degree

from the
centre of Mean =(1+2+3+4)/4
𝐵=BHtanθ

𝐵=BHtanθ
the
tan 

bench Direct Reversed Direct Reverse tan 

(x) cm current current current current
ent
1 2 3 4 1 2 3 4

1 0
2 2
3 4
4 6
5 8
6 10
7 12

- 33 -
Result
𝟐𝝅𝒏𝑰
1. BH at x=0= (Theoretical Value): =---------------
𝟏𝟎𝟕 𝒓𝟒

2. BH at x=0 = (Practical Value): =--------------------

Verification of result

1. Radius of coil: (Given): = --------------

2. Radius of coil from graph=--------------

- 34 -
 8. FERMI ENERGY OF COPPER
Aim: To determine the Fermi energy (EF) of a given metal (copper) wire by studying resistance
variation with temperature.
Apparatus: Insulated copper wire, multimeter, thermometer, beaker, heater, connecting wires
Formula: The Fermi energy of the given metal (copper) wire is calculated using the relation
2
 m   VF T   R 
2

     
 2   R   T 
EF  eV
1.6 10 19

Where, T is the temperature of the metal in K

VF is the Fermi velocity in m/s, (for copper VF=1.57 x106m/s)

m is the mass of the electron = 9.1x10-31kg

ΔR
R is the resistance of the metal in Ω & is the slope of the curve in Ω/K
ΔT

Experimental setup and Graph: Resistance (R) variation with temperature (T) (Fig.1)

- 35 -
Graph: Resistance variation with temperature

15.4
15.2
15.0
14.8

Resistance R ()
14.6
14.4
14.2
14.0
13.8
13.6
13.4
315 320 325 330 335 340 345 350 355
Temperature T (K)

Observations: Table-1

Temperature (T) Resistance (R)

ºC K (Ω)

80 353

75 348

70 343

65 338

60 333

55 328

50 323

45 318

The Fermi energy of the given metal (copper) wire is calculated using the relation

 m   VF T   R 
2 2

     
 2   R   T 
EF  eV
1.6 10 19

=---------- Ev

Result: The Fermi energy (EF) of given copper wire is found to be ……………………eV.

- 36 -
- 37 -
 9. PLANCK’S CONSTANT USING LED’S.
Aim: To determine Planck’s constant (h) using LED’s (Light Emitting Diode)

Apparatus: Power supply, Given LED’s, Potentiometer (22KΩ), Resistor, multimeters and
connecting wires.

Formula:

Planck’s constant h is given by

𝒆𝑽𝑲 𝝀
𝒉= in Js
𝒄

Where,
e is the charge of an electron = 1.6 × 10−19 C
V is the shutoff voltage in volts
λ is the wavelength of the given LED in m
and c is the velocity of light = 3 × 108 m/s
Diagram:

- 38 -
Observations:

LED: BLUE LED: RED

Voltage(V) Current (I) Voltage(V) Current (I)

in V in mA in V in mA

LED Wavelength Shutoff voltage 𝒆𝑽𝝀 Mean h in Js

𝒉= Js
𝒄
𝝀 𝒊𝒏 nm V in volt

Blue

Red

Result: The mean value of Planck’s constant (h) is found to be … … … … … . . . . . . . . . .. Js.

- 39 -
- 40 -
 10. BAND GAP OF A SEMICONDUCTOR

Aim: To determine the energy gap (Eg) of a given semiconductor.

Apparatus: Multimeter (for resistance measurement), Beaker (borosil) 500ml capacity,
Thermometer (0-1100C), given semiconductor, Heater, connecting wires.
Formula: The energy gap of a given semiconductor
2.303 x 𝐾𝐵 x 𝑆𝑙𝑜𝑝𝑒
𝐸𝑔 = 𝑒𝑣
1.6𝑋10−19

Where, kB, Boltzmann constant=1.38x10-23J/K, Slope of log10R v/s 1/T, R= Resistance, Ω

Temperature, K

Circuit diagram:

Graph

- 41 -
Observations:
1
Temperature T Temperature T × 10−3 (K-1) Resistance R in Log10R
𝑇
in 0 C in K Ω

85 358

80 353

75 348

70 343

65 338

60 333

55 328

50 323

45 318

40 313

Calculations:

2.303 × 𝐾𝐵 × 𝑆𝑙𝑜𝑝𝑒
The energy gap of a given semiconductor 𝐸𝑔 = 𝑒𝑣
1.6𝑋10−19

Where, slope = KΩ

= eV

Result: The energy gap of a given semiconductor is found to be = eV.

- 42 -
- 43 -
11. PROJECTILE MOTION USING A SPREAD SHEET

V 100 ms-1
Data given for a Angle
g
600
9.8ms-2
projectile dt 0.1s

Time Vx Vy X Y
0 86,60254 50 0 0
0,1 86,60254 49,02 8,660254 5
0,2 86,60254 48,04 17,32051 9,902
0,3 86,60254 47,06 25,98076 14,706
0,4 86,60254 46,08 34,64102 19,412
0,5 86,60254 45,1 43,30127 24,02
0,6 86,60254 44,12 51,96152 28,53
0,7 86,60254 43,14 60,62178 32,942
0,8 86,60254 42,16 69,28203 37,256
0,9 86,60254 41,18 77,94229 41,472
1 86,60254 40,2 86,60254 45,59
1,1 86,60254 39,22 95,26279 49,61
1,2 86,60254 38,24 103,923 53,532
1,3 86,60254 37,26 112,5833 57,356
1,4 86,60254 36,28 121,2436 61,082
1,5 86,60254 35,3 129,9038 64,71
1,6 86,60254 34,32 138,5641 68,24
1,7 86,60254 33,34 147,2243 71,672
1,8 86,60254 32,36 155,8846 75,006
1,9 86,60254 31,38 164,5448 78,242
2 86,60254 30,4 173,2051 81,38
2,1 86,60254 29,42 181,8653 84,42
2,2 86,60254 28,44 190,5256 87,362
2,3 86,60254 27,46 199,1858 90,206
2,4 86,60254 26,48 207,8461 92,952
2,5 86,60254 25,5 216,5064 95,6
2,6 86,60254 24,52 225,1666 98,15
2,7 86,60254 23,54 233,8269 100,602
2,8 86,60254 22,56 242,4871 102,956
2,9 86,60254 21,58 251,1474 105,212
3 86,60254 20,6 259,8076 107,37
3,1 86,60254 19,62 268,4679 109,43
3,2 86,60254 18,64 277,1281 111,392
3,3 86,60254 17,66 285,7884 113,256

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3,4 86,60254 16,68 294,4486 115,022
3,5 86,60254 15,7 303,1089 116,69
3,6 86,60254 14,72 311,7691 118,26
3,7 86,60254 13,74 320,4294 119,732
3,8 86,60254 12,76 329,0897 121,106
3,9 86,60254 11,78 337,7499 122,382
4 86,60254 10,8 346,4102 123,56
4,1 86,60254 9,82 355,0704 124,64
4,2 86,60254 8,84 363,7307 125,622
4,3 86,60254 7,86 372,3909 126,506
4,4 86,60254 6,88 381,0512 127,292
4,5 86,60254 5,9 389,7114 127,98
4,6 86,60254 4,92 398,3717 128,57
4,7 86,60254 3,94 407,0319 129,062
4,8 86,60254 2,96 415,6922 129,456
4,9 86,60254 1,98 424,3524 129,752
5 86,60254 1 433,0127 129,95
5,1 86,60254 0,02 441,673 130,05
5,2 86,60254 -0,96 450,3332 130,052
5,3 86,60254 -1,94 458,9935 129,956
5,4 86,60254 -2,92 467,6537 129,762
5,5 86,60254 -3,9 476,314 129,47
5,6 86,60254 -4,88 484,9742 129,08
5,7 86,60254 -5,86 493,6345 128,592
5,8 86,60254 -6,84 502,2947 128,006
5,9 86,60254 -7,82 510,955 127,322
6 86,60254 -8,8 519,6152 126,54
6,1 86,60254 -9,78 528,2755 125,66
6,2 86,60254 -10,76 536,9358 124,682
6,3 86,60254 -11,74 545,596 123,606
6,4 86,60254 -12,72 554,2563 122,432
6,5 86,60254 -13,7 562,9165 121,16
6,6 86,60254 -14,68 571,5768 119,79
6,7 86,60254 -15,66 580,237 118,322
6,8 86,60254 -16,64 588,8973 116,756
6,9 86,60254 -17,62 597,5575 115,092
7 86,60254 -18,6 606,2178 113,33
7,1 86,60254 -19,58 614,878 111,47
7,2 86,60254 -20,56 623,5383 109,512
7,3 86,60254 -21,54 632,1985 107,456
7,4 86,60254 -22,52 640,8588 105,302
7,5 86,60254 -23,5 649,5191 103,05
7,6 86,60254 -24,48 658,1793 100,7
7,7 86,60254 -25,46 666,8396 98,252

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Plot of x as a function of y of a projectile

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 12. RADIUS OF CURVATURE OF PLANO CONVEX LENS
USING NEWTON’S RINGS
Aim: To determine the Radius of curvature of a given Plano convex lens by Newton’s rings
method.
Apparatus: Plano convex lens, plane glass plate, stand with a turnable glass plate, Traveling
Microscope (TM), sodium vapor lamp, etc.
Formula: The Radius of curvature of a given Plano convex lens is given by

R=
D Dn2
2
m 
avg , meter
4(m  n)

Where R = Radius of curvature of the Plano convex lens in meter.

Dm = Diameter of the mth dark ring in meter.
Dn = Diameter of the nth dark ring in meter.
 = Wavelength of Sodium light 5893 Å i.e., 5893 x 10-10 m
Figure:

Newton’s Rings setup Newton’s Rings

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OBSERVATIONS:

Pitch of the screw= distance moved on pitch scale = 1mm = 1mm

No. of rotations given to the head scale 1

LC of the Traveling Microscope = Pitch of the screw = 1mm = 0.01mm

No of division on head scale 100

Travelling Microscope Total Reading, TR= PSR+ (HSR × L.C), mm

Where PSR=Pitch Scale Reading, mm and HSR= Head Scale Reading

Left Hand Side readings (LHS)

Ring PSR TR
HSR
No. mm mm

R12
R10
R8
R6
R4
R2

Right Hand Side readings (RHS)

Ring PSR TR
HSR
No. mm mm

R2
R4
R6
R8
R10
R12

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Tabular column: To determine (D2m- D2n)avg :

TM reading TM reading
Ring in mm Diameter D m Ring
2
in mm Diameter D2n
D2m-D2n
No Dm=Lm-Rm in No Dn =Ln- Rn in
Left Right mm2
‘m’ in mm mm 2
‘n’ Left Right in mm mm2
Lm Rm Ln Rn

12 6
10 4
8 2

(D2m-D2n) mean or avg = …… mm2 = …… x 10-6 m2 , Value of (m-n) =6

The Radius of curvature of the given Plano-convex lens R =

D2
m  Dn2 
avg , m
4(m  n)

= m

Result: The Radius of curvature of the given Plano-convex lens R is found to be ……… m.

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