INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC5855

DESCRIPTION
·High speed switching
·High voltage
·Low saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Horizontal deflection output for super high resolution
·Display color TV digital TV

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 700 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 10 A

IB Base Current-Continuous 5 A

Collector Power Dissipation

PC 50 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

 INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC5855

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 700 V

V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A 3 V

VBE(sat) Base-Emitter Saturation Voltage IC=8A; IB= 2A 1.4 V

ICBO Collector Cutoff Current VCB= 1500V; IE= 0 100 μA

hFE-1 DC Current Gain IC= 1A; VCE= 5V 28 60

hFE-2 DC Current Gain IC=6A; VCE= 5V 6.2 10

hFE-3 DC Current Gain IC=8A; VCE= 5V 4.3 6.7

isc Website：www.iscsemi.cn 2 isc & iscsemi is registered trademark