HiPerFETTM VDSS ID25 RDS(on)

Power MOSFETs IXFH/IXFT 30N50 500 V 30 A 0.16 W

IXFH/IXFT 32N50 500 V 32 A 0.15 W
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr £ 250 ns

Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)

VDSS T J = 25°C to 150°C 500 V

VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
D (TAB)
ID25 TC = 25°C 30N50 30 A
32N50 32 A
IDM TC = 25°C 30N50 120 A TO-268 (D3) Case Style
pulse width limited by TJM 32N50 128 A
IAR TC = 25°C 30N50 30 A
32N50 32 A
EAS TC = 25°C 1.5 J
G (TAB)
EAR ID = 25°C 45 mJ
S
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
G = Gate, D = Drain,
PD TC = 25°C 360 W S = Source, TAB = Drain

TJ -55 ... +150 °C

TJM 150 °C Features
Tstg -55 ... +150 °C
• International standard packages
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C • Low RDS (on) HDMOSTM process
Md Mounting torque 1.13/10 Nm/lb.in. • Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
Weight 6 g
rated
• Low package inductance
- easy to drive and to protect
Symbol Test Conditions Characteristic Values • Fast intrinsic Diode
(TJ = 25°C, unless otherwise specified)
min. typ. max. Applications

VDSS VGS = 0 V, ID = 1 mA 500 V • DC-DC converters

VDSS temperature coefficient 0.102 %/K • Battery chargers
• Switched-mode and resonant-mode
VGS(th) VDS = VGS, ID = 4 mA 2 4 V power supplies
VGS(th) temperature coefficient -0.206 %/K • DC choppers
• AC motor control
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA • Temperature and lighting controls
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 mA Advantages
VGS = 0 V TJ = 125°C 1 mA
• Easy to mount with 1 screw (TO-247)
RDS(on) VGS = 10 V, ID = 15A 32N50 0.15 W (isolated mounting screw hole)
30N50 0.16 W • Space savings
Pulse test, t £ 300 ms, duty cycle d £ 2 %
• High power density

IXYS reserves the right to change limits, test conditions, and dimensions. 97518H (6/99)
© 2000 IXYS All rights reserved 1-4
 IXFH 30N50 IXFH 32N50
IXFT 30N50 IXFT 32N50

Symbol Test Conditions Characteristic Values

TO-247 AD (IXFH) Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 18 28 S
C iss 5200 5700 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 640 750 pF
C rss 240 310 pF

td(on) 35 45 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 42 50 ns
td(off) RG = 2 W (External) 110 140 ns
tf 26 35 ns

Qg(on) 227 300 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 29 40 nC
Qgd 110 145 nC Dim. Millimeter Inches
Min. Max. Min. Max.
RthJC 0.35 K/W
A 19.81 20.32 0.780 0.800
RthCK (TO-247 Case Style) 0.25 K/W B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
Source-Drain Diode Characteristic Values G 1.65 2.13 0.065 0.084
(TJ = 25°C, unless otherwise specified) H - 4.5 - 0.177
Symbol Test Conditions min. typ. max. J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
IS VGS = 0 V 30N50 30 A
L 4.7 5.3 0.185 0.209
32N50 32 A M 0.4 0.8 0.016 0.031
ISM Repetitive; 30N50 120 A N 1.5 2.49 0.087 0.102
pulse width limited by TJM 32N50 128 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t rr TJ = 25°C 250 ns
IF = IS TJ = 125°C 400 ns
QRM -di/dt = 100 A/ms, TJ = 25°C 0.85 mC
VR = 100 V TJ = 25°C
IRM 8 A

TO-268AA (D3 PAK) Dim. Millimeter Inches

Min. Max. Min. Max. Min. Recommended Footprint
A 4.9 5.1 .193 .201
A1 2.7 2.9 .106 .114
A2 .02 .25 .001 .010
b 1.15 1.45 .045 .057
b2 1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E1 13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 2-4
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
 IXFH 30N50 IXFH 32N50
IXFT 30N50 IXFT 32N50

Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC

80 60
VGS=10V
TJ = 25OC TJ = 125OC VGS=10V
70 9V
8V 9V
50 8V
7V
60 7V
6V 6V
ID - Amperes

40

ID - Amperes
50

40 30
30 5V
5V 20
20

10 10

0 0
0 4 8 12 16 20 0 4 8 12 16 20
VDS - Volts VDS - Volts

Figure 3. RDS(on) normalized to 15A/25OC vs. ID Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.8 2.8
VGS = 10V VGS = 10V

2.4 2.4
RDS(ON) - Normalized
RDS(ON) - Normalized

Tj=1250 C ID = 32A

2.0 2.0

ID = 16A
1.6 1.6
Tj=250 C
1.2 1.2

0.8 0.8
0 10 20 30 40 50 60 25 50 75 100 125 150

ID - Amperes TJ - Degrees C

Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

40
50
IXFH32N50
32
40
IXFH30N50
ID - Amperes

ID - Amperes

24
30
TJ = 125oC
16
20
TJ = 25oC
8
10

0
0
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8
TC - Degrees C VGS - Volts

© 2000 IXYS All rights reserved 3-4

 IXFH 30N50 IXFH 32N50
IXFT 30N50 IXFT 32N50

Figure 7. Gate Charge Figure 8. Capacitance Curves

14 4500
4000 F = 1MHz
12 Vds=300V
Ciss
ID=30A
3500

Capacitance - pF
10 IG=10mA
3000
VGS - Volts

8 2500
6 2000
Coss
1500
4
1000
Crss
2
500
0 0
0 50 100 150 200 250 300 0 5 10 15 20 25

Gate Charge - nC VDS - Volts

Figure 9. Forward Voltage Drop of the

Intrinsic Diode
100 30

VGS= 0V
1 ms
80 10
ID - Amperes

10 ms
ID - Amperes

60
100 ms
TJ=125OC
40 1
O
TC = 25 C DC

20
TJ=25OC

0 0.1
0.4 0.6 0.8 1.0 1.2 500
10 100
VSD - Volts
VDS - Volts

Figure 10. Transient Thermal Resistance

0.40

0.35

0.30
R(th)JC - K/W

0.25

0.20

0.15

0.10

0.05

0.00
10-3 10-2 10-1 100 101

Pulse Width - Seconds

© 2000 IXYS All rights reserved 4-4