9012 PNP SILICON TRANSISTOR

TO 92

FEATURES

1.EMITTER
Power dissipation
PCM : 0.625 W Tamb=25 2.BASE

Collector current
3.COLLECTOR 1 2 3
ICM : -0.5 A
Collector-base voltage
V(BR)CBO : -40 V

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -100 A IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO Ic= -0. 1 mA IB=0 -20 V

Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 -5 V

Collector cut-off current ICBO VCB=-40 V IE=0 -0.1 A

Collector cut-off current ICEO VCE=- 20 V IB=0 -0.2 A

Emitter cut-off current IEBO VEB= - 5 V IC=0 -0.1 A

HFE 1 VCE= -1 V, IC= -50 mA 64 300

DC current gain(note)
HFE 2 VCE= -1V, IC =-500 mA 40

Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50 mA -0.6 V

Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50 mA -1.2 V

Base-emitter voltage VEB IE=-100mA -1.4 V

VCE=- 6 V, IC= -20 mA

Transition frequency fT 150 MHz
f =30MHz

CLASSIFICATION OF HFE(1)
Rank D E F G H I

Range 64-91 78-112 96-135 112-166 144-202 190-300

 9013 NPN SILICON TRANSISTOR

TO 92

FEATURES
1.EMITTER
特 征
发 射 极
Power dissipation 最大耗散功率 2.BASE

PCM : 0.625 W Tamb=25 基 极

3.COLLECTOR
Collector current 最大集电极电流
集 电 极
ICM : 0.5 A
1 2 3
Collector-base voltage 集电极--基极击穿电压

V(BR)CBO : 45 V

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

电 特 性 环境温度 除 非 另 有 规 定
Parameter Symbol Test conditions MIN TYP MAX UNIT
参 数 符 号 测 试 条 件 最小值 典型值 最大值 单位
Collector-base breakdown voltage
集 电 极 - - 基 极 击 穿 电 压
V(BR)CBO Ic= 100 A IE=0 45 V

Collector-emitter breakdown voltage

集 电 极 - - 发 射 极 击 穿 电 压
V(BR)CEO Ic= 0. 1 mA IB=0 25 V

Emitter-base breakdown voltage

发 射 极 - - 基 极 击 穿 电 压 V(BR)EBO IE= 100 A IC=0 5 V

Collector cut-off current

集电极--基极截止电流 ICBO VCB= 40 V IE=0 0.1 A

Collector cut-off current

集电极--发射极截止电流
ICEO VCE= 20 V IB=0 0.1 A

Emitter cut-off current

发射极--基极截止电流
IEBO VEB= 5 V IC=0 0.1 A

HFE 1 VCE= 1 V, IC= 50 mA 64 300

DC current gain(note)
直 流 电 流 增 益
HFE 2 VCE= 1V, IC =500 mA 40

Collector-emitter saturation voltage

集 电 极 - - 发 射 极 饱 和 压 降 VCE(sat) IC= 500 mA, IB=50 mA 0.6 V

Base-emitter saturation voltage

基极--发射极饱和压降
基极 发射极饱和压降
VBE(sat) IC= 500mA, IB= 50 mA 1.2 V

Base-emitter voltage
基 极 - - 发 射 极 正向 电压
VBE IE=100mA 1.4 V

VCE= 6 V, IC= 20 mA
Transition frequency
特 征 频 率 fT 150 MHz
f =30MHz

CLASSIFICATION OF HFE(1) 分类
Rank
档次
D E F G H I
Range
范围
64-91 78-112 96-135 112-166 144-220 190-300
 9014 NPN SILICON TRANSISTOR

TO 92

FEATURES

1.EMITTER
Power dissipation
PCM : 0.4 W Tamb=25 2.BASE

Collector current
3.COLLECTOR 1 2 3
ICM : 0.1 A
Collector-base voltage
V(BR)CBO : 50 V

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 50 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA IB=0 45 V

Emitter-base breakdown voltage V(BR)EBO IE= 100 A IC=0 5 V

Collector cut-off current ICBO VCB=50 V, IE=0 0.1 A

Collector cut-off current ICEO VCE=35 V, IB=0 0.1 A

Emitter cut-off current IEBO VEB= 3 V IC=0 0.1 A

DC current gain(note) HFE 1 VCE= 5 V, IC= 1mA 60 1000

Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 5 mA 0.3 V

Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 5mA 1 V

VCE= 5 V, IC= 10mA

Transition frequency fT 150 MHz
f =30MHz

CLASSIFICATION OF HFE(1)
Rank A B C D

Range 60-150 100-300 200-600 400-1000

 9015 PNP SILICON TRANSISTOR

TO 92

FEATURES

1.EMITTER
Power dissipation
PCM : 0.45 W Tamb=25 2.BASE

Collector current
3.COLLECTOR 1 2 3
ICM : -0.1 A
Collector-base voltage
V(BR)CBO : -50 V

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -100 A IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO Ic= - 1 mA IB=0 -45 V

Emitter-base breakdown voltage V(BR)EBO IE= -100 A IC=0 - 5 V

Collector cut-off current ICBO VCB=-50 V, IE=0 -0.05 A

Collector cut-off current ICEO VCE=-35 V, IB=0 -0.05 A

Emitter cut-off current IEBO VEB= -5 V IC=0 - 0.05 A

DC current gain(note) HFE 1 VCE= - 5 V , IC= -1mA 60 1000

Collector-emitter saturation voltage VCE(sat) IC= -100mA, I B= -10 mA -0.3 V

Base-emitter saturation voltage VBE(sat) IC= -100 mA, I B= -10mA -1 V

VCE= -5V, I C= -10mA

Transition frequency fT 150 MHz
f =30MHz

CLASSIFICATION OF HFE(1)
Rank A B C D

Range 60-150 100-300 200-600 400-1000

9018 NPN SILICON TRANSISTOR

TO 92

FEATURES
1.EMITTER
Power dissipation
PCM : 0.31 W Tamb=25 2.BASE

Collector current
3.COLLECTOR
ICM : 0.05 A 1 2 3
Collector-base voltage
V(BR)CBO : 25 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100 A IE=0 25 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA IB=0 18 V

Emitter-base breakdown voltage V(BR)EBO IE= 100 A IC=0 4 V

Collector cut-off current ICBO VCB= 20 V IE=0 0.1 A

Collector cut-off current ICEO VCE= 15 V IB=0 0.1 A

Emitter cut-off current IEBO VEB= 3 V IC=0 0.1 A

DC current gain HFE 1 VCE= 5 V, IC= 1mA 28 270

Collector-emitter saturation voltage VCE(sat) IC=10 mA , IB=1mA 0.5 V

Base-emitter saturation voltage VBE(sat) IC=10mA , IB=1mA 1.4 V

VCE=5 V, IC=5 mA
Transition frequency fT 600 MHz
f =400MHz

CLASSIFICATION OF HFE(1)
Rank D E F G H I J

Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270

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