SGM721

SGM722
SGM723 970µA, 10MHz, Rail-to-Rail I/O
SGM724 CMOS Operational Amplifier

PRODUCT DESCRIPTION FEATURES

The SGM721 (single), SGM722 (dual), SGM723 (single with • Low Cost
shutdown) and SGM724 (quad) are low noise, low voltage, • Rail-to-Rail Input and Output
and low power operational amplifiers, that can be designed 1mV Typical VOS
into a wide range of applications. The SGM721/2/3/4 have a • High Gain-Bandwidth Product: 10MHz
high Gain- Bandwidth Product of 10MHz, a slew rate of • High Slew Rate: 8.5V/µs
8.5V/μs, and a quiescent current of 0.97mA/amplifier at 5V. • Settling Time to 0.1% with 2V Step: 0.36 µs
The SGM723 has a power-down disable feature that • Overload Recovery Time: 0.4µs
reduces the supply current to 160nA. • Low Noise : 8 nV/ Hz
• Operates on 2.5 V to 5.5V Supplies
The SGM721/2/3/4 are designed to provide optimal • Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V
performance in low voltage and low noise systems. They • Low Power
provide rail-to-rail output swing into heavy loads. The 0.97 mA/Amplifier Typical Supply Current
input common-mode voltage range includes ground, and SGM723 160nA when Disabled
the maximum input offset voltage is 4mV for SGM721/2/3/4. • Small Packaging
They are specified over the extended industrial
SGM721 Available in SC70-5, SOT23-5 and SO-8
temperature range (−40°C to +125°C). The operating range
SGM722 Available in MSOP-8 and SO-8
is from 2.5V to 5.5V.
SGM723 Available in SOT23-6 and SO-8
SGM724 Available in TSSOP-16 and SO-16
The single version, SGM721 is available in SC70-5, SOT23-5
and SO-8 packages. SGM723 is available in SOT23-6 and
SO-8 packages. The dual version SGM722 is available in PIN CONFIGURATIONS (Top View)
SO-8 and MSOP-8 packages. The quad version SGM724 is
available in SO-16 and TSSOP-16 packages. SGM721 SGM721/723

OUT 1 5 +VS NC 1 8 DISABLE

(SGM723 ONLY)

-VS 2 -IN 2 7 +VS

+IN 3 6 OUT
+IN 3 4 -IN

APPLICATIONS SC70-5 / SOT23-5

-VS 4
NC = NO CONNECT
5 NC

Sensors SGM723 SO-8

Audio
723

OUT 1 6 +VS
Active Filters SGM724
-VS 2 5
A/D Converters DISABLE
OUT A 1 16 OUT D

Communications +IN 3 4 -IN -IN A 2 15 -IND

Test Equipment +IN A 3 14 +IND
SOT23-6
Cellular and Cordless Phones SGM722 +VS 4 13 -VS
Laptops and PDAs 12 +INC
OUT A 1 8 +VS +INB 5
Photodiode Amplification
-INB 6 11 -INC
-IN A 2 7 OUT B
Battery-Powered Instrumentation
OUT B 7 10 OUT C
+IN A 3 6 -IN B
NC 8 NC = NO CONNECT 9 NC
-VS 4 5 +IN B
TSSOP-16 / SO-16
SO-8 / MSOP-8

REV. B
Shengbang Microelectronics Co, Ltd
Tel: 86/451/84348461
www.sg-micro.com
 ELECTRICAL CHARACTERISTICS :VS = +5V
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)

SGM721/2/3/4

PARAMETER CONDITION TYP MIN/MAX OVER TEMPERATURE

0℃ to -40℃ -40℃ to MIN/

+25℃ +25℃ 70℃ to 85℃ 125℃ UNITS MAX
INPUT CHARACTERISTICS
Input Offset Voltage (VOS) 1 4 4.5 4.75 5 mV MAX
Input Bias Current (IB) 1 pA TYP
Input Offset Current (IOS) 1 pA TYP
Common-Mode Voltage Range (VCM) VS = 5.5V -0.1 to +5.6 V TYP
Common-Mode Rejection Ratio(CMRR) VS = 5.5V, VCM = - 0.1V to 4 V 91 75 74 73 72.5 dB MIN
VS = 5.5V, VCM = - 0.1V to 5.6 V 86 64 64 63 62 dB MIN
Open-Loop Voltage Gain( AOL) RL = 600Ω ,Vo = 0.15V to 4.85V 90 84 81 80 72 dB MIN
RL =10KΩ ,Vo = 0.05V to 4.95V 100 95 90 88 77 dB MIN
Input Offset Voltage Drift (∆VOS/∆T) 2.1 µV/℃ TYP
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail RL = 600Ω 0.1 V TYP
RL = 10KΩ 0.015 V TYP
Output Current (IOUT) 57 53 52 50 45 mA MIN
Closed-Loop Output Impedance F = 1MHz, G = +1 5.7 Ω TYP
POWER-DOWN DISABLE
Turn-On Time 2.2 µs TYP
Turn-Off Time 0.8 µs TYP
DISABLE Voltage-Off 0.8 V MAX
DISABLE Voltage-On 2 V MIN
POWER SUPPLY
Operating Voltage Range 2.5 2.5 2.5 2.5 V MIN
5.5 5.5 5.5 5.5 V MAX
Power Supply Rejection Ratio (PSRR) Vs = +2.5 V to + 5.5 V
VCM = (-VS) + 0.5V 100 80 79 78 77 dB MIN
Quiescent Current/ Amplifier (IQ) IOUT = 0 0.97 1.13 1.25 1.28 1.38 mA MAX
Supply Current when Disabled
(SGM723 only) 0.16 1 µA MAX

DYNAMIC PERFORMANCE RL = 600Ω

Gain-Bandwidth Product (GBP) 10 MHz TYP
Phase Margin(φO) 63.5 degrees TYP
Full Power Bandwidth(BWP) ＜1% distortion 400 KHz TYP
Slew Rate (SR) G = +1, 2 V Output Step 8.5 V/µs TYP
Settling Time to 0.1%( tS) G = +1, 2 V Output Step 0.36 µs TYP
Overload Recovery Time VIN ·Gain = Vs 0.4 µs TYP
NOISE PERFORMANCE
Voltage Noise Density (en) f = 1kHz 8 nV/ Hz TYP
f = 10kHz 6.4 nV/ Hz TYP
Current Noise Density( in) f = 1kHz 10 fA/ Hz TYP

Specifications subject to change without notice.

２
SGM721/2/3/4
 PACKAGE/ORDERING INFORMATION
PACKAGE PACKAGE MARKING
MODEL ORDER NUMBER
DESCRIPTION OPTION INFORMATION
SGM721XC5/TR SC70-5 Tape and Reel, 3000 721
SGM721 SGM721XN5/TR SOT23-5 Tape and Reel, 3000 721
SGM721XS/TR SO-8 Tape and Reel, 2500 SGM721XS
SGM722XMS/TR MSOP-8 Tape and Reel, 3000 SGM722XMS
SGM722
SGM722XS/TR SO-8 Tape and Reel, 2500 SGM722XS
SGM723XN6/TR SOT23-6 Tape and Reel, 3000 723
SGM723
SGM723XS/TR SO-8 Tape and Reel, 2500 SGM723XS
SGM724XS/TR SO-16 Tape and Reel, 2500 SGM724XS
SGM724
SGM724XTS TSSOP-16 Tape and Reel, 3000 SGM724XTS

ABSOLUTE MAXIMUM RATINGS CAUTION

Supply Voltage, V+ to V- ............................................ 7.5 V This integrated circuit can be damaged by ESD.
Common-Mode Input Voltage Shengbang Micro-electronics recommends that all
.................................... (–VS) – 0.5 V to (+VS) +0.5V integrated circuits be handled with appropriate
Storage Temperature Range..................... –65℃ to +150℃ precautions. Failure to observe proper handling and
Junction Temperature.................................................160℃ installation procedures can cause damage.
Operating Temperature Range.................–55℃ to +150℃ ESD damage can range from subtle performance
Package Thermal Resistance @ TA = 25℃ degradation to complete device failure. Precision
SC70-5, θJA................................................................ 333℃/W integrated circuits may be more susceptible to
SOT23-5, θJA.............................................................. 190℃/W damage because very small parametric changes could
SOT23-6, θJA.............................................................. 190℃/W cause the device not to meet its published
SO-8, θJA......................................................................125℃/W specifications.
MSOP-8, θJA.............................................................. 216℃/W
SO-16, θJA..................................................................... 82℃/W
TSSOP-16, θJA............................................................ 105℃/W
Lead Temperature Range (Soldering 10 sec)
.....................................................260℃
ESD Susceptibility
HBM................................................................................1500V
MM....................................................................................400V

NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.

３
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.

Closed-Loop Output Voltage Swing Output Impedance vs.Frequency

6
100
5 Vs = 5V

Output Impedance(Ω)
Output Voltage(Vp-p)

Vs = 5V 80
4
VIN = 4.9VP-P
TA = 25℃ 60
3 G = 100
RL = 2KΩ
G = +1 40 G = 10
2
G =1
20
1

0
0
1 10 100 1000 10000
10 100 1000 10000
Frequency(kHz)
Frequency(kHz)

Positive Overload Recovery Negative Overload Recovery

Vs = ±2.5V
+2.5V RL = 10KΩ
+2.5V
VIN = 50mV
Vs = ±2.5V G = 100
0V 0V
RL = 10KΩ
0V VIN = 50mV
0V
G = 100

-50mV
-50mV

Time(500ns/div) Time(500ns/div)

Large-Signal Step Response Small-Signal Step Response

Vs = 5V Vs = 5V
G = +1 G = +1
CL = 200pF CL = 100pF
RL = 10KΩ RL = 10KΩ
Voltage(1V/div)

Voltage(50mV/div)

Time(500ns/div) Time(200ns/div)

４
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.

PSRR vs.Frequency CMRR vs.Frequency

120 120
Vs = 5V Vs = 5V
110
100
100

80 90

CMRR(dB)
PSRR(dB)

80
60 70

60
40
50

20 40
1 10 100 1000 10000 1 10 100 1000 10000
Frequency(kHz) Frequency(kHz)

Input Voltage Noise Spectral Density

Small-Signal Overshoot vs.Load Capacitance
vs.Frequency
70 100
Vs = 5V Vs = 5V
Voltage Noise(nV/√Hz)

60
Small-Signal Overshoot(%)

RL = 10kΩ RL = 620Ω
50 TA = 25℃
G=1
40 +OS
-OS 10
30

20

10

0 1
1 10 100 1000 10 100 1000 10000
Load Capacitance(pF) Frequency(Hz)

Channel Separation vs.Frequency Open-Loop Gain vs.Temperature

130 120

120
110
Channel Separation(dB)

Open–Loop Gain(dB)

110 RL = 10KΩ
100
100
Vs = 5V
RL = 620Ω 90 RL = 600Ω
90
TA = 25℃
G=1 80
80

70 70
0.1 1 10 100 1000 10000 100000 -50 -30 -10 10 30 50 70 90 110 130
Frequency(kHz) Temperature(℃)

５
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.

CMRR vs.Temperature PSRR vs.Temperature

120 130
VS = 5.5V
110 120 VS = 2.5V to 5.5V
VCM = - 0.1V to 4 V

100 110
CMRR(dB)

PSRR(dB)
90 100

80 90
VCM = - 0.1V to 5.6V

70 80

60 70
-50 -30 -10 10 30 50 70 90 110 130 -50 -30 -10 10 30 50 70 90 110 130
Temperature(℃) Temperature(℃)

Supply Current vs.Temperature Shutdown Current vs.Temperature

1.4 300

1.3 260
VS = 5V
Shutdown Current(nA)

1.2
Supply Current(mA)

220
1.1
180
1
VS = 2.5V 140
0.9
VS = 3V 100 VS = 3V
0.8
VS = 5V VS = 2.5V
0.7 60

0.6 20
-50 -30 -10 10 30 50 70 90 110 130 -50 -30 -10 10 30 50 70 90 110 130
Temperature(℃) Temperature(℃)

Output Voltage Swing vs.Output Current Output Voltage Swing vs.Output Current
5 3
Sourcing Current
Sourcing Current
4 VS = 5V
VS = 3V
Output Voltage(V)

Output Voltage(V)

2
3
135℃ 25℃ -50℃
135℃ 25℃ -50℃
2
1
1
Sinking Current Sinking Current
0 0
0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60
Output Current(mA) Output Current(mA)

６
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.

Small-Signal Overshoot vs.Load Capacitance Output Impedance vs.Frequency

70 120
Vs = 2.7V
60 RL = 10kΩ 100 Vs = 2.7V
Small-Signal Overshoot(%)

Output Impedance(Ω)
TA = 25℃
50
G=1 80
40 +OS
-OS 60
30 G = 100
40
20 G = 10

20 G =1
10

0 0
1 10 100 1000 1 10 100 1000 10000
Load Capacitance(pF) Frequency(kHz)

Large-Signal Step Response Small-Signal Step Response

Vs = 2.7V
Vs = 2.7V G = +1
G = +1 CL = 100pF
CL = 200pF RL = 10KΩ
RL = 10KΩ
Voltage(50mV/div)
Voltage(1V/div)

Time(500ns/div) Time(200ns/div)

Closed-Loop Output Voltage Swing Channel Separation vs.Frequency

3 130

2.5 120
Output Voltage(Vp-p)

Channel Separation(dB)

2 110

1.5 100
Vs = 2.7V Vs = 2.7V
VIN = 2.6VP-P RL = 620Ω
1 TA = 25℃ 90
TA = 25℃
RL = 2KΩ G=1
0.5 80
G=1

0 70
10 100 1000 10000 0.1 1 10 100 1000 10000 100000
Frequency(kHz) Frequency(kHz)

７
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.

Offset Voltage Production Distribution

33
30
Percent of Amplifiers(%) Typical production
27 distribution of
24 packaged units.
21
18
15
12
9
6
3
0
-4 -3 -2 -1 0 1 2 3 4
Offset Voltage(mV)

８
SGM721/2/3/4
APPLICATION NOTES
Driving Capacitive Loads
The SGM72x can directly drive 4700pF in unity-gain without
oscillation. The unity-gain follower (buffer) is the most sensitive
configuration to capacitive loading. Direct capacitive loading
reduces the phase margin of amplifiers and this results in
ringing or even oscillation. Applications that require greater
capacitive drive capability should use an isolation resistor
between the output and the capacitive load like the circuit in
Figure 1. The isolation resistor RISO and the load capacitor CL
form a zero to increase stability. The bigger the RISO resistor
value, the more stable VOUT will be. Note that this method
results in a loss of gain accuracy because RISO forms a voltage
divider with the RLOAD.
Power-Supply Bypassing and Layout
The SGM72x family operates from either a single +2.5V to
+5.5V supply or dual ±1.25V to ±2.75V supplies. For
single-supply operation, bypass the power supply VDD with a
0.1µF ceramic capacitor which should be placed close to the
VDD pin. For dual-supply operation, both the VDD and the VSS
supplies should be bypassed to ground with separate 0.1µF
ceramic capacitors. 2.2µF tantalum capacitor can be added for
better performance.
Good PC board layout techniques optimize performance by
decreasing the amount of stray capacitance at the op amp’s
inputs and output. To decrease stray capacitance, minimize
trace lengths and widths by placing external components as
close to the device as possible. Use surface-mount
components whenever possible.

For the operational amplifier, soldering the part to the board

directly is strongly recommended. Try to keep the high
RISO frequency big current loop area small to minimize the EMI
SGM721 (electromagnetic interfacing).
VOUT
VIN CL

VDD 10µF
Figure 1. Indirectly Driving Heavy Capacitive Load VDD 10µF
0.1µF
An improvement circuit is shown in Figure 2. It provides DC 0.1µF
accuracy as well as AC stability. RF provides the DC accuracy
by connecting the inverting signal with the output. CF and RIso Vn
serve to counteract the loss of phase margin by feeding the VOUT
Vn SGM721
high frequency component of the output signal back to the VOUT
amplifier’s inverting input, thereby preserving phase margin in SGM721 Vp
the overall feedback loop. Vp 10µF

CF 0.1µF
VSS(GND)
RF
RISO
SGM721 VOUT VSS
VIN
CL RL
Figure 3. Amplifier with Bypass Capacitors

Figure 2. Indirectly Driving Heavy Capacitive Load with DC Grounding

Accuracy
For no-buffer configuration, there are two others ways to
increase the phase margin: (a) by increasing the amplifier’s
gain or (b) by placing a capacitor in parallel with the feedback
resistor to counteract the parasitic capacitance associated with
inverting node.
A ground plane layer is important for SGM72x circuit design.
The length of the current path speed currents in an inductive
ground return will create an unwanted voltage noise. Broad
ground plane areas will reduce the parasitic inductance.
Input-to-Output Coupling
To minimize capacitive coupling, the input and output signal
traces should not be parallel. This helps reduce unwanted
positive feedback.

９
SGM721/2/3/4
Typical Application Circuits
C
Differential Amplifier
R2
The circuit shown in Figure 4 performs the difference function. R1
If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then
VOUT = ( Vp – Vn ) × R2 / R1 + Vref.
VIN

R2 SGM721 VOUT

R1
Vn
SGM721 VOUT R3=R1//R2
Vp
R3

R4 Figure 6. Low Pass Active Filter

Vref

Figure 4. Differential Amplifier

Instrumentation Amplifier
The circuit in Figure 5 performs the same function as that in
Figure 4 but with the high input impedance.

R2
R1
SGM721
Vn
SGM721 VOUT

Vp R3 R4
SGM721

Vref

Figure 5. Instrumentation Amplifier

Low Pass Active Filter

The low pass filter shown in Figure 6 has a DC gain of (-R2/R1)
and the –3dB corner frequency is 1/2πR2C. Make sure the filter
is within the bandwidth of the amplifier. The Large values of
feedback resistors can couple with parasitic capacitance and
cause undesired effects such as ringing or oscillation in
high-speed amplifiers. Keep resistors value as low as possible
and consistent with output loading consideration.

１０
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

SC70-5

D
θ Dimensions Dimensions
e1
Symbol In Millimeters In Inches
e
Min Max Min Max
A 0.900 1.100 0.035 0.043
L

A1 0.000 0.100 0.000 0.004

A2 0.900 1.000 0.035 0.039
E1

E
b 0.150 0.350 0.006 0.014
c 0.080 0.150 0.003 0.006
D 2.000 2.200 0.079 0.087
L1

b E 1.150 1.350 0.045 0.053

0.20
C E1 2.150 2.450 0.085 0.096
A1

e 0.650TYP 0.026TYP
e1 1.200 1.400 0.047 0.055
A2
A

L 0.525REF 0.021REF
L1 0.260 0.460 0.010 0.018
θ 0° 8° 0° 8°

１１
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

SOT23-5

D
θ
Dimensions Dimensions
0.20 Symbol In Millimeters In Inches
b 0

Min Max Min Max

L A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
E1

A2 1.050 1.150 0.041 0.045

E

b 0.300 0.400 0.012 0.016

c 0.100 0.200 0.004 0.008
L

D 2.820 3.020 0.111 0.119

e
E 1.500 1.700 0.059 0.067
e1 C
E1 2.650 2.950 0.104 0.116
A1

e 0.950TYP 0.037TYP
e1 1.800 2.000 0.071 0.079
A2

L 0.700REF 0.028REF
A

L1 0.300 0.600 0.012 0.024

θ 0° 8° 0° 8°

１２
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

SOT23-6

D Dimensions Dimensions
Symbol In Millimeters In Inches
e1 θ
e 0.20 Min Max Min Max
0
L A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.400 0.012 0.016
E1

c 0.100 0.200 0.004 0.008

D 2.820 3.020 0.111 0.119
E 1.500 1.700 0.059 0.067
L

b E1 2.650 2.950 0.104 0.116

C e 0.950TYP 0.037TYP
A1

e1 1.800 2.000 0.071 0.079

L 0.700REF 0.028REF
A2
A

L1 0.300 0.600 0.012 0.024

θ 0° 8° 0° 8°

１３
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

SO-8

D
Dimensions Dimensions
C
Symbol In Millimeters In Inches
Min Max Min Max
L

A 1.350 1.750 0.053 0.069

A1 0.100 0.250 0.004 0.010
A2 1.350 1.550 0.053 0.061
E1
E

B 0.330 0.510 0.013 0.020

C 0.190 0.250 0.007 0.010
D 4.780 5.000 0.188 0.197
θ
E 3.800 4.000 0.150 0.157
e
E1 5.800 6.300 0.228 0.248
e 1.270TYP 0.050TYP
A1

B L 0.400 1.270 0.016 0.050

θ 0° 8° 0° 8°
A2

１４
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

MSOP-8

b C

Dimensions Dimensions
L

Symbol In Millimeters In Inches

Min Max Min Max
A 0.800 1.200 0.031 0.047
E1

A1 0.000 0.200 0.000 0.008

A2 0.760 0.970 0.030 0.038
b 0.30 TYP 0.012 TYP
c 0.15 TYP 0.006 TYP
θ D 2.900 3.100 0.114 0.122
e 0.65 TYP 0.026 TYP
e A2 E 2.900 3.100 0.114 0.122
E1 4.700 5.100 0.185 0.201
A L 0.410 0.650 0.016 0.026
θ 0° 6° 0° 6°
A1

１５
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

SO-16

D
C
Dimensions Dimensions

L
Symbol In Millimeters In Inches
Min Max Min Max
A 1.350 1.750 0.053 0.069
E1
E

A1 0.100 0.250 0.004 0.010

A2 1.350 1.550 0.053 0.061
b 0.330 0.510 0.013 0.020
θ c 0.170 0.250 0.007 0.010
e
D 9.800 10.20 0.386 0.402
E 3.800 4.000 0.150 0.157
E1 5.800 6.200 0.228 0.244
e 1.270 (BSC) 0.050 (BSC)
L 0.400 1.270 0.016 0.050
A2

A1
A

θ 0° 8° 0° 8°
b

１６
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS

TSSOP-16

A
b

Dimensions Dimensions
Symbol In Millimeters In Inches
E1

Min Max Min Max

E

D 4.900 5.100 0.193 0.201

E 4.300 4.500 0.169 0.177
PIN #1 IDENT. b 0.190 0.300 0.007 0.012
A2 c 0.090 0.200 0.004 0.008
e E1 6.250 6.550 0.246 0.258
A
A 1.100 0.043
A2 0.800 1.000 0.031 0.039
A1 0.020 0.150 0.001 0.006
C
θ e 0.65 (BSC) 0.026 (BSC)
L 0.500 0.700 0.020 0.028
A H 0.25(TYP) 0.01(TYP)
L

D θ 1° 7° 1° 7°
H

A1

１７
SGM721/2/3/4
REVISION HISTORY
Location Page

11/06— Data Sheet changed from REV. A to REV. B

Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Shengbang Microelectronics Co, Ltd

Unit 3, ChuangYe Plaza

No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park
Harbin Development Zone
Harbin, HeiLongJiang 150078
P.R. China
Tel.: 86-451-84348461
Fax: 86-451-84308461
www.sg-micro.com

１８
SGM721/2/3/4