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Intelligent
Computing and
Information and
Communication
Proceedings of 2nd International
Conference, ICICC 2017
Advances in Intelligent Systems and Computing
Volume 673
Series editor
Janusz Kacprzyk, Polish Academy of Sciences, Warsaw, Poland
e-mail: kacprzyk@ibspan.waw.pl
The series “Advances in Intelligent Systems and Computing” contains publications on
theory, applications, and design methods of Intelligent Systems and Intelligent Computing.
Virtually all disciplines such as engineering, natural sciences, computer and information
science, ICT, economics, business, e-commerce, environment, healthcare, life science are
covered. The list of topics spans all the areas of modern intelligent systems and computing.
The publications within “Advances in Intelligent Systems and Computing” are primarily
textbooks and proceedings of important conferences, symposia and congresses. They cover
significant recent developments in the field, both of a foundational and applicable character.
An important characteristic feature of the series is the short publication time and world-wide
distribution. This permits a rapid and broad dissemination of research results.
Advisory Board
Chairman
Nikhil R. Pal, Indian Statistical Institute, Kolkata, India
e-mail: nikhil@isical.ac.in
Members
Rafael Bello Perez, Universidad Central “Marta Abreu” de Las Villas, Santa Clara, Cuba
e-mail: rbellop@uclv.edu.cu
Emilio S. Corchado, University of Salamanca, Salamanca, Spain
e-mail: escorchado@usal.es
Hani Hagras, University of Essex, Colchester, UK
e-mail: hani@essex.ac.uk
László T. Kóczy, Széchenyi István University, Győr, Hungary
e-mail: koczy@sze.hu
Vladik Kreinovich, University of Texas at El Paso, El Paso, USA
e-mail: vladik@utep.edu
Chin-Teng Lin, National Chiao Tung University, Hsinchu, Taiwan
e-mail: ctlin@mail.nctu.edu.tw
Jie Lu, University of Technology, Sydney, Australia
e-mail: Jie.Lu@uts.edu.au
Patricia Melin, Tijuana Institute of Technology, Tijuana, Mexico
e-mail: epmelin@hafsamx.org
Nadia Nedjah, State University of Rio de Janeiro, Rio de Janeiro, Brazil
e-mail: nadia@eng.uerj.br
Ngoc Thanh Nguyen, Wroclaw University of Technology, Wroclaw, Poland
e-mail: Ngoc-Thanh.Nguyen@pwr.edu.pl
Jun Wang, The Chinese University of Hong Kong, Shatin, Hong Kong
e-mail: jwang@mae.cuhk.edu.hk
Intelligent Computing
and Information
and Communication
Proceedings of 2nd International Conference,
ICICC 2017
123
Editors
Subhash Bhalla Anil S. Hiwale
Department of Computer Software Department of Information Technology
University of Aizu MIT College of Engineering
Aizuwakamatsu, Fukushima Pune, Maharashtra
Japan India
Anjali A. Chandavale
Department of Information Technology
MIT College of Engineering
Pune, Maharashtra
India
v
vi Preface
publication chairs for doing a great job in making the conference widely visible.
Thanks to dynamic team members for organizing the event in a smooth manner.
Our sincere thanks to all sponsors, press, print, and electronic media for their
excellent coverage of this conference.
Chief Patrons
Prof. Dr. Vishwanath Karad, India
Prof. Dr. Vijay Bhatkar, India
Patrons
Prof. Dr. Mangesh Karad, India
Prof. Dr. Rahul Karad, India
Organizing Chair
Dr. Ramchandra Pujeri, India
Organizing Co-chair
Dr. Anil Hiwale, India
Advisory Committee
Dr. Seeram Ramakrishna, Singapore
Dr. Subhash Bhalla, Japan
Dr. Shirish Sane, India
Dr. Suresh Borkar, USA
Dr. Shabnam Ivkovic, Canada
TPC Chair
Dr. Anjali A. Chandavale, India
Publication Chair
Dr. Suresh Chandra Satapathy, Vijayawada, India
vii
Contents
ix
x Contents
xvii
xviii About the Editors
Abstract In this paper, 35 W driver power amplifier was designed and simulated
using GaN HEMT for L-band radar. GaN HEMT is used because it can provide
high output power and high gain as compared to other semiconductor technologies.
The 35 W output power is generated using CGHV40030 GaN HEMT which is
sufficient to drive further stages of power amplifier. The driver amplifier is designed
at 1.3 GHz of center frequency. This amplifier is designed in class AB and 60.5%
of PAE is achieved.
1 Introduction
V. Ratnaparkhi (&)
Department of EXTC, SSGMCE, Shegaon, Maharashtra, India
e-mail: ratnaparkhi_vivek@yahoo.co.in
A. Hiwale
Department of IT, MITCOE, Pune, Maharashtra, India
e-mail: anil.hiwale@mitcoe.edu.in
promising choice for SSPA design for microwave applications. Most of the tran-
sistor manufacturers are now developing GaN high-power transistors with attractive
performance characteristics. Table 1 shows the comparison of power devices family
on the basis of device characteristics. It is apparent that new GaN semiconductor
devices are capable of producing almost 1 KW of output power with the highest
efficiency of 65%. If several stages of solid-state power amplifiers are combined
properly, very high output power in the range of few kilowatts can be generated. It
is also important to note that lifetime of power amplifiers using SSPDs is very high
when compared with the power grid tubes (PGTs) and electron beam devices
(EBDs) such as traveling wave tubes (TWTs) and klystrons. From the reliability
point of view, SSPDs are more reliable than PGTs and EBDs.
GaN solid-state transistors have the potential to disrupt very large vacuum tube
market and can replace some conventional vacuum tubes. There is high demand for
GaN SSPAs for microwave applications.
For radar applications, traveling wave tubes (TWT) such as magnetrons and kly-
strons were conventionally used because of the required power level as high as
1 kw [4]. GaN transistors were first demonstrated in the 1990s and have started to
become commercially available in last decade [5]. GaN transistors have many
advantages when it is compared with other semiconductor materials like Si, GaAs,
and SiC. Table 2 compares material characteristics of Si, GaAs, SiC, and GaN. It is
apparent that GaN has higher breakdown voltage which allows GaN HEMTs to
operate at biasing voltages about 50VDC. Large drain voltages lead to high output
impedance per watt of RF power and result in easier matching circuit design.
Since GaN HEMT devices have higher impedance than other semiconductor
devices, this can help to enhance the PAE and bandwidth of the required SSPA.
High-saturated drift velocity results in higher saturation current densities and watts
per unit periphery. This ensures GaN HEMTs suitability for switched-mode power
amplifiers [6].
It is evident that high-power amplifiers made by Gallium arsenide produce high
efficiency than silicon high-power amplifiers. GaN devices even provide higher
efficiencies than GaAs power amplifiers. Due to such high-efficiency capabilities,
GaN high-power SSPAs are being used extensively in microwave applications.
GaN devices can operate at higher voltage and have higher saturated velocity which
allows GaN transistors to generate higher power in smaller space which results in
high power density. Consequently, smaller size high-power amplifiers can be
fabricated with GaN transistors.
There are many researchers and manufacturers working in the field of
GaN SSPA design for microwave applications. Recently, solid-state power
amplifiers designed using GaN HEMT devices have replaced many conventional
vacuum tubes used for radar and space applications. It is expected that GaN
technology will certainly grow and will be promising choice for high output power
applications at microwave frequencies with high reliability and lesser noise when
compared to conventional vacuum tubes.
Over the last decade, GaN-based high electron mobility transistors (HEMTs) have
emerged as excellent devices for a number of applications [7]. GaN HMTs tech-
nology has been shown to provide high power and high efficiency making it the
perfect candidate for this next-generation radar system [8]. George Solomon [9] and
his group from Communications and Power Industries, LLC Beverly Microwave
Division have reported the VSX3622, a 1.5 kW X-B, and GaN power amplifier for
radar applications. In this section, a step-by-step design of GaN HEMT driver
power amplifier for L-band radar applications is explained.
Figure 1 shows topology of proposed solid-state power amplifier for L-band
radar applications. Using proposed topology, at least 500 W output power can be
achieved. In this paper, design and simulation of GaN solid-state driver power
amplifier are discussed.
4 V. Ratnaparkhi and A. Hiwale
4 Results
In this section, simulation results of GaN driver power amplifier are presented.
Keysigth’s ADS software is used for design and simulation of GaN driver power
amplifier. Since our requirement is to generate at least 30 W output power from
driver stage, CGHV40030 GaN HEMT is selected.
4.1 DC Analysis
Cree’s CGHV40030 GaN HEMT is used for designing driver power amplifier [10].
First stage of PA design is to carry out DC analysis and find out the operating point
of proposed amplifier. Since maximum output power is expected, class AB is the
best choice for proposed driver power amplifier. Upon performing DC analysis in
ADS, VDS = 48 V and VGS = −3 V selected as operating points, which ensures
IDS = 20 mA. The device power consumption at this bias is 88 mW.
It is very important to perform and ensure stability of the device before proceeding
for further design. Any instabilities of the device may generate unwanted oscilla-
tions and amplifier performance will affect significantly. Device may have
unconditionally stable or conditionally stable. There are two stability checks
available to check stability of the device: stability factor and stability measure.
35 W GaN Solid-State Driver Power Amplifier for L-Band … 5
m2
2.4
2.2
m2
freq=1.300GHz
2.0 StabFact1=1.902
StabMeas1
StabFact1
StabMeas1=1.407
1.8
1.6
1.4
1.2
1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50
freq, GHz
Figure 2 shows stability factor greater than one and stability measure greater than
zero which ensures that device is unconditionally stable. This stability analysis is
performed after proper DC biasing to the device.
Load pull analysis is the important step in PA design. Having a good nonlinear
model is essential for starting PA design. We have obtained nonlinear model of
CGHV40030 from device manufacturer. Load pull analysis is carried out using
nonlinear models of the device to find out optimum impedance to be presented to
device for specific output power, PAE, IMD, etc. Once optimum load and source
impedances are found using load pull, impedance matching network is designed.
For CGHV40030 GaN HEMT, load pull analysis is performed and results are
shown in Fig. 3.
Once load pull analysis is completed and obtained values for source and load
impedances, input and output impedance matching networks can be designed.
Results of complete amplifier with input and output matching networks after some
6 V. Ratnaparkhi and A. Hiwale
optimization are shown in this section. Figure 4a shows output power of designed
GaN SSPA, which is almost 35 W. Figure 4b shows PAE of designed GaN SSPA
and it is acceptable for our proposed driver amplifier.
(a) 50 m1
40
m1
freq=1.300GHz
dBm(Vout)=45.328
30
dBm(vout)
20
10
-10
-20
0 1 2 3 4 5 6 7
freq, GHz
5 Conclusion
References
1. Allen Katz and Marc Franco “GaN comes of Age” in IEEE microwave magazine, December
2005. pp. 524–534.
2. David Schnaufer “GaN: The Technology of the Future http://www.rfglobalnet.com/doc/gan-
the-technology-of-the-future-0001.
3. A. Katz et al. “A linear GaN UHF SSPA with record high efficiency,” in IEEE MTT-S Int.
Microwave Symp. Dig., Boston, MA, June 7–12, 2009, pp. 769–772.
4. Ken Kikkuchi et al., “An X-Band 300-Watt Class High Power GaN HEMT Amplifier for
Radar Applications”, SEI Technical Review, Number 81, October 2015, pp. 40–44.
5. Francesco Fornetti “Characterisation and performance optimization of GaN HEMTs and
amplifiers for Radar applications” December 2010.
6. Andrew Moore and Jose Jimenez “GaN RF Technology For Dummies”, TriQuint Special
Edition Published by John Wiley & Sons, Inc. 111 River St. Hoboken, NJ 07030-5774,2014.
7. Guest Editorial Special Issue on GaN Electronic Devices “IEEE Transactions on Electron
Devices,” vol. 60, no. 10, October 2013, pp. 2975–2981.
8. T. Thrivikraman and J. Hoffman, “Design of an ultrahigh efficiency GaN high-power
amplifier for SAR remote sensing,” in IEEE Aerospace Conference, pp. 1–6, 2013.
9. George Solomon et al., “The VSX3622, a 1.5 kW X-band GaN Power Amplifier for Radar
Application”, Communications & Power Industries LLC, Beverly Microwave Division.
10. Cree’s Datasheet Online available at: http://www.wolfspeed.com/cghv40030.
Validation of Open Core Protocol
by Exploiting Design Framework Using
System Verilog and UVM
Keywords Open core protocol (OCP) Intellectual property (IP)
System on chip (SOC) Socket-based interface Core concentric
1 Introduction
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