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1 History of Microelectronics
1 History of Microelectronics
1 History of Microelectronics
In 1904, John Ambrose Fleming, an English physicist, devised the first practical electron tube known as the "Fleming
Valve.
In the early 1910s, he ameliorated the reception of these signals by building up his research on the "Edison Effect" (dark particles smudge the inside of glass light bulbs as current flows through one direction), Fleming attached a light bulb outfitted with two electrodes to a receiving system. In it, electrons flew from the negatively charged cathode to the positively charged anode. As the current within the tube was moving from negative to positive, the weak incoming signal were rectified into detectable direct current.
Source: http://www.lucent.com/minds/transistor/
Although solid-state technology overwhelmingly dominates today's world of electronics, vacuum tubes are holding out in two small but vibrant areas. They do so for entirely different reasons. Microwave technology relies on tubes for their powerhandling capability at high frequencies ["Tubes: still vital after all these years," Robert S. Symons, IEEE Spectrum, April, 1998]. The other area--the creation and reproduction of music-is a more complicated and controversial story.
Sources: http://www.lucent.com/minds/transistor/ http://www.svetlana.com/docs/tubeworks.html
First Transistor
1947
1st transistor AT&T Bell Lab 1st commercially available TR Raytheon CK703, 1948
3 inventors (John Bardeen, Walter Brattain, and William Shockley) share Nobel prize 1st commercially successful TR Raytheon CK722, 1953 Ge-based pnp low power TR
Source: http://roiconnect.com/transistor.htm
http://www.ti.com/corp/docs/kilbyctr/jackbuilt.shtml
Moores law
Gordon Moore, a co-founder of Intel said in 1965 Component counts per unit area doubles every two years .
Feature size reduction enables the increase of complexity.
# of devices SSI (Small scale IC) MSI (Medium scale IC) LSI (Large scale IC) VLSI (Very Large scale IC) ULSI (Ultra Large scale IC) GSI (Giga scale integration) RLSI (Ridiculously Large scale IC) ? 1 ~ 100 102 ~ 103 103 ~ 105 105 ~ 106 106 ~ 109 109 ~ Next to GSI
Source: http://www.intel.com/technology/mooreslaw/index.htm
Its a race! Its all about the cost!!! Some semiconductor companies started to drop their effort to develop the next generation semi. technology because of extreme cost.
EE 3310 Electronic Devices, Dr. J.B. Lee Source: http://www.ndu.edu/inss/DefHor/DH30/DH_30.htm
Minimum feature size (design rule): Samsung 32 Gb NAND flash => 30 nm Intel Knights Corner implementing 50 Intel cores => 22 nm
Virus: ~ 100 nm
Gate oxide thickness is only 1.2 nm for the 65 nm technology node!!! (too easy to tunnel through!!!) This is truly one and only profit generating nanotechnology!!!
EE 3310 Electronic Devices, Dr. J.B. Lee
Source: http://www.mentorg.co.jp/N-V/99_3/gif/opc_1.jpg
80~100 mm
Early 1960s IC
4 TRs and several resistors
2 dia.
12 dia.
18 dia. wafer
ITRS
1997 DRAM (half-pitch) 0.25 MPU (gate length) DRAMs Samples 0.20
256-Mbit 1-Gbit
Logic transistors/cm MPUs ASICs Voltage (V) Wafer size (mm) 3.7 M 8M 1.8-2.5 200 (8) 6.2 M 14 M 1.5-1.8 10 M 16 M 1.2-1.5 18 M 24 M 1.2-1.5 300 39 M 40 M 0.9-1.2 300 84 M 64 M 0.6-0.9 180 M 100 M 0.5-0.6
TR on IC Nanotube FET nm m
Ant: ~ 5mm
Hair: ~ 100 m
Computers, Communication devices, Transportation (radars, dash board electronics), Scientific instruments, homes (radios, clocks, ) .. Solar cells, LEDs, lasers, CCD sensors, MEMS, ..
You need to DESIGN systems. You need to make NEW or IMPROVED devices.
Semiconductor devices
p-n junction diodes, Field effect transistors (FETs), and Bipolar junction transistors (BJTs)