Mil-Hdbk-217f W n1 and n2

NOTICE
OF CHANGE
k
NOT MEASUREMENT
SENSITIVE
MIL-HDBK-217F
1
e
THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
NOTICE 2 28 February 1995
MILITARY HANDBOOK RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F 1.
The following pagesofMIL-HDBK-217F New Page($) Front Cover ...

Ml
have been revised and supersede the pagea Med. superseded Page(6) Front Cover ... 11! iv v vi
vii New Page 1-1
. r r
Date
[ 2 December 199I
iv v
vi .,. Vlll 1-1
vii 1
Date 2 December 1991 Reprinted without charme 2 Deoember 1991 I 2 December 1991 I 2 Deoember 1991 I 10 Julv 1992 2 Deoember 1991 12 2 2 I2 12 12 December Deoember Deoember Daoember December Deoember 1991 1991 1991 1991 1991 1991
\
A
L
1
1
4
I 1 ,
1-2 2-1 2-2 2-3 2-4 2-5 2-6

9.7
New Page ~ 21 2-2 2-3 . 2-4 2-5 2-6

New Paae
1 1
r v ,
2-8 53 54 5-5 5-6 5-9 5-1o 5-23 5-24

6-1
I 10 July 1992
2 December 1991
New Page 5-3 5-4 5-5 5-6 5-9 5-1o 5-23 5-24
6-1 ~
2 December
1991
6-2 7-3 7-4 9-1 through 9-3 10-1 through 10-6

11-1 11-2 11-!? ..,
2 December
1991
6-2 7-3 7-4
10 Ju~ 1992 Reprinted without change 2 December 1991 2 IxoWnber 1991 10 Ju& 1992 Reprinted without change 2 Deoember 1991 2Deoember1991 Reprinted without change 2 December 1991 2 Deoember 1991 Reprinted without change
2 December 2 December [ 2 C)ecember I 2 December ! 2 December 2 December 1991 1991 1991 1991 1991 1991 1991 1991
I 4
9-1 through 9-29 10-1 through 10-32

11-1
11-2 11-3 11-4, 11-5
11-4 16
,
d
12-1
1~.p
. . . . . . . . -.
12-1
12-2
2 December
2
December
..
1
MI1-HDBK-217F NOTICE 2
I
r
New Page(s)
Date
Superseded
Page(s) 10 JUIY 1992 I 2 December 2 December 2 December 2 December - ?ecember z Uecember
Date
1991 1991 1991 1991 1991 1991
12-3
12-4 12-5 13-1 13-2 --14-1 through 14-2 14-3
12-3
12-4 12-5 13-1 13-2 ---
15-1 through 15-3 16-1 r 16-2 I #

16-4
14-1 mrougn 144 14-5 15-1 through 15-6 16-1 New Page I
New Page
2 December 1991 2 December 1991 2 December 1991 i 2 December 2 December 2 December ] 2 December
1991 1991, 10 July 1992 1991 1991
17-1
Appendix C-3 A
17-1
A-1 through A-18
1
2.
c-4
c-3 c-4
Retain the pages of this notice and insert before the Table of Contents.
3.
Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been entered. The notice pages will be retained as a check sheet. The issuance, together with appended pages, is a separate publication. Each notice is to be retained by stocking points until the military handbook is revised or canceled. Preparing Activity: Air Force -17
Project No, RELI-0074
Custodians: Army - CR Navy - EC Air Force -17 Review Activities: Army - Ml, AV, ER
Navy - SH, AS, OS
Air Force-11,13,
15, 19,99
Army - AT, ME, GL Navy - CG, MC, YD, TD

Air Force -85
AMSC NIA DISTRIBUTION
STATEMENT
A: Approved
for publlc release; dlstnbutlon
unlimited.
----
=,
I-
r____
I NOT MEASUREMENT SENSITIVE]
MIL-HDBK-217F 2 DECEMBER 1991

SUPERSEDING MIL-HDBK-217E, Notice 1 2 January 1990
MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
THIS HANDBOOK IS FOR GUIDANCE ONLY -DO NOT CITE THIS DOCUMENT AS A REQUIREMENT
AMSC NIA DISTRIBUTION STATEMENT Ad Approved for publlc release; drstrlbu!lcn tinllmtted ! FSC-RELI _ . :
MIL-HDBK-217F
DEPARTMENT OF DEFENSE WASHINGTONDC 20301
RELIABILITY
PREDICTION
OF ELECTRONIC
EQUIPMENT
1, This standardization with the assistance 2.
handbook was developed of the military departments,
by the Department of Defense federal agencies, and industry. on reliability periodically to
Every effort has been prediction procedures. ensure its completeness
made to reflect the latest information It is the intent to review this handbook and currency.
3.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Laborato@ERSR, Attm Seymour F. Morris, 525 Brooks 13441-4505, by using the self-addressed Rd., Griffiss AFB, NY Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
II ,.. .-. .- .. -..., -.-- ___ __
..
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al..
-A--
I-*A
-*..A;a-
MIL-HDBK-217F
TA8LE
SECTION 1.1
OF CONTENTS
1.2 1.3
SECTION SECTION 3.1 3.2 3.3 3.4 SECTION SECTION
1: SCOPE Purpose ................... ..... .... .... .. .. ...... ... ... ......... .. .. .... .................. ......... .... ........ ... .... .. Application . ......... ....... ....... ...... .. ... ... ...... ........ ..... .............. ... .... .......... ............ ... .... .. Computerized Reliability Prediction .. .... .. ........ ... ..... ...... ........ .... ....... ....... ........... .... .. 2: REFERENCE DOCUMENTS ..................... ................... ....... ....... ... ..... ... ......
1-1 1-1 1-1 2-1
3: INTRODUCTION Reliability Engineering ... .... ...... . .... ... ....... ........ .... .. .... ............... .......... ... .... .... .... .... .. The Role of Reliability Prediction ........... ............................................................. .... .. Limitations of Reliability Predictions ....... ....................... ........................... .................
Part Stress Analysis Prediction ................................................................................ 4:

5: RELIABILITY ANALYSIS EVALUATION
q
3-1 3-1 3-2 3-2
. ..... .......................... ................. ..
4-1
5-1 5-3 5-4 5-7 5-8 5-9 5-1o 5-11 513 5-14 5-15 5-17 5-18 5-20
5.1
5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 SECTION 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 6,14 6.15
Gate/Logic Arrays and Microprocessors
. .... ... ............ .... .................. ...... .... .... .. INTRODUCTION ......... ................................................... ........ Memories .... .... .... ...... ........ ...... ..........0..... .... ...... .... ........... .................. ...... ..... ........ . VHSIC/VHSIC Like ................. ..... .... .............. ..... ...... ... .................... ... ....... .... .. .. ...... GaAs MMIC and Digital Devices . .. ... .... ..... ........ .... .... ........... ....... .............. ....... .... .... .. Hybrids ... ... ............. ...... .... ........ ... ... ... ... .... .... .... .... ........... .......... ...... .... ........ .......... SAW Devices ........ ..... ............ ... .. .... ...... ........ ....... .... ..... ............. ..... ...... . ...... .. .. ...... Magnetic Bubble Memories ...... .. ...... ... ... ........ ... .... .... ..... ...... ................ ......... .. ........ XT Table for All ................ .......... ..... .................... .....................0... ........... ...., *.**...... ., MICROCIRCUITS, C2 Table for All .......................................................................................................
XE, ~ and ZQ Tables for All ............. ................................................*.**................0.

q
TJ Determination, TJ Determination,
(All Except Hybrids) ......................*.*... ............................ ...*.....*,.

q q
(For Hybrids) ...................................................................... .*.......

q
Examples ...............................................................................................................
DISCRETE SEMICONDUCTORS Discrete Semiconductors, Introduction ... . ....... ... .. .. ......... ...... ................... ....00..... ... .. Diodes, Low Frequency ..... ..... .. .. ... .. .... ... ... ..... .... .. ............ ........... ...... .... ....... ........., Diodes, High Frequency (Microwave, RF) . ....... ..... .... ...... ..................... ... .... .... .... .... .. Transistors, Low Frequency, Bipolar ..... ... .... .... .... .. ....... ..... ..................... ....... .... . ..... Transistors, Low Frequency, Si FET ...... ........ ....... ...................0................................ Transistors, Unijunction ........... .. ............ ................ ................................. ....... .... ...... Transistors, Low Noise, High Frequency, Bipolar ........... ... O.*......**.*.. ....... ......... .... ... . Transistors, High Power, High Frequency, Bipolar .......0..... ....................... ................. Transistors, High Frequmcy, GaAs FET .. .... ..... .
q
6:
. . . . . . . ...0.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistors, High Frequency, Si FET .......................... Thyristors and SCRS .....................**.........................

q
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . ...0...
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..*...... ,, ., . 0......,, ,
Optoelectronics, Optoelectronics, TJ Determination
Detectors,
Isolators,
Emitters ... .... ........ .............

q
Optoelectronics, Alphanumeric Displays .........0..................
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Laser Diode ... . ....... ....... ........... .. ......... .................. .... ... ... .... . ........ . ................ ..... ... .... .. ... ... ........ .... .. ..... ....... .............. ... ........... ..........
6-1 6-2 6-4 6-6 6-8 6-9 6-10 6-12 6-14 6-16 6-17 6-19 6-20 6-21 6-23 6-25
Example ...... ........................ .... ..... .... ... ... ....... .. .... ................ .................. . ...... . .........
Ill
...
MIL-HD8K-217F
NOTICE 2
TABLE sECTION 7.1 7.2 7.3 SECTlON 8.0 8.1 8.2 8.3 8.4 sECTION 9.1
OF
CONTENTS TUBEs 7: ................ .......... ............. .. .................. .... ..... All Types Except ?WT and Magnetron Traveling Wave ................................... ............... ......... .................... ........ ................ Magnetron ............ ... ............ .............. ....... ................. .. ....!..... ... ....... ....... ............... LASERs 8: introduction ............ ..... ....... ...... .............. ............... ..... ........ ... .... .. .... ........ ....... ...... . ......... ....... ....... ..... ....... ....... .................. .. .............. ........ ... .... ... Helium and Argon .. ........ ....... .. ........ ............ ...... ... .......... .. .................. ......... .. Carbon Dioxide, Sealed ............ .... ....... ......................................... ...... ....... .......... Carbon Dioxide, Flowing ........ ..... ..................... .... ... ............ .............. ... Solid State, ND:YAG and Ruby Rod RESISToRs 9: Resistors . ... .......... ..... ........ ...... ........ ....... .................... ....... .... .... .. ......o=~. ...-.... ..
q
7-1
7-3 7-4 8-1 8-2 8-3 8-4 8-5
9-1
sECTION
10.1
10.2 sECTIO~ 11.1 11.2 11.3 sECTlol 12.1 12.2 12.3 sECTIO 13.1 13.2
CAPACITORS 10: Capacitors ............ .... ... ...... .. ............... ... ...... ................ ......... ....*.... ......0.... ....... .... .. ...... ... ...... ........ ............... ......... ........... ........... ..... . .... ........... . Capacitors, Example INDUCTIVE DEVICES 11: ........ ..... ..... ...... .... .... ....... ....... .............. ..................... ................. ...... . Transformers Colh,.. . . ....... ..... ... .................... ........ ............ .................. ......... ...... .......... ... ........ .... ............. .................................. .......... . .. Determination of l-lot Spot Temperature ROTATING DEVICES 12: Motors . .. ............. .... ............. ... .... .. ...... ..................... ............*.* ... .. ...... .................
q
10-1 10-6
11-1 11-3 11-4
12-1
....................................................... ......*..... .......... .*.* Synchros and Resolvem ............................................ ...............................$................. Elapsed lime Meters
RELAys Mechanical .. ............. ........ ...... .... ... ..................... ..... ................. ...........0..... ..... ........ .......... ........ ................ ................ ... .......................... ... ... Solid State and Time Delay
12-4 12-5
13:
13-1 13-3
sECTlc )N 14.1 14.2 SECTI( )N 15.1
SWITCHEs 14: Sw[tche . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*... ....o...~ . . . . . . . . . . . . . . . Circuit Breakers ................. ..... ..... ...........0..,,..,.. . .......... ....... .... ... ...... .......... ... .. CONNECTORS 15: ...... ........ ........ .... ...... ................. ... .......... ..... .... .. ......... .... .. .... Connectors, General . ..... ...... .... ... ...... .............. .............. .......*.... ...*...*** .. *..*.*.*. ..... Connectors, Sockets
14-1 14-2
15-1 15-3
15.2 )
INTERCONNECTION ASSEMBLIES ......... .................. ........ .. ..... sECTl~ ON 16: Interconnection Assemblies with Plated Through Holes ................... ...................... 16. I Interconnection Assemblies, Suflace Mount Technology 16.: ~ SECTI ON 17. 1 SECT! ION 18. 1 SECT ION 19 .1 CONNECTIONS 17: ...... ............ ....... ....... .... ........................ ................. Connections
16-1 16-2
17-1
. . ..0...... . . . . . . . . . . . . . . . . . .
METERS Meters, Panel .................................!...... ................................................................. . 18: QUARTZ CRYSTALS 19: ................................................. Quartz C~sta\s .....................................................
18-1
19-1
Supersedes
page w of Revtslon
Iv
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l-l
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.Tc ,
MIL-HDBK-217F NOTICE 2
TABLE
OF
CONTENTS
SECTION 20.1 SECTION 21.1 SECTION 22.1 SECTION 23.1 APPENDIX APPENDIX APPENDIX
LAMPS 20: Lamps .. . ..... .. .......... .............. ........... .... .... .... ....................... .. ...... ... .... .... ... ............. ELECTRONIC FILTERS 21: Electronic Filters, Non-Tunable ........ ... ........ ......... ................................................... . FUSES 22: Fuses. . .... .. .... ...... ................ ......... .. ... ........ ..... .... ......... .... .... ..... ....... .... .... ............. MISCELLANEOUS PARTS 23: Miscellaneous Parts ............. ... .......... .. ............... .... ........ ..... ....... .... .... .... ... .. ........ .... A: B: C: PARTS COUNT RELIABILITY AND VLSI PREDICTION CMOS . .. .... .. ..... .... ...*.. ... .. ...*... ... ... MODEL) .. ..... .... ...
20-1
21-1
22-1
23-1 A-1 B-1 c-1
VHSIC/VHSICOLIKE BIBLIOGRAPHY
(DETAILED
. .................. ... .... ... ................. ........ ...... .... .... ...... ...............
LIST Table Table Table Table Table 3-1: 3-2: 4-1: 6-1: 6-2:
OF
TABLES 3-3
Parts with Mu)ti-Level Quality Specifications ......................... ............................... Environmental Symbol and Description ........................................*. ....................
Reliability Analysis Checklist ...... ....................................................................... Defautt Case Temperatures for All Environments (C) . ..... ............ ... ..... . ............ ...
Approximate Thermal Resistance for Semicond@or Devices Sk= .......*.*.......**......*...................*...*..*........................... in Various Pa*@
3-4 4-1
6-23 6-24
LIST Figure 5-1: Figure 8-1:
OF
FIGURES 5-18 8-1
Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate .......... .... .. Examples of Active Optical Suffaces . ........... ... ................ ............ ..... ... ....... ..... ...
V Supersedes ,.. . I
racinclucl
page v of Revision
I VLRY I rlmllllulk
F
I IWUIIIICIIIICLIL I
M! L-HDBK-217F
NOTICE 2
FOREWORD 1.0 THIS HANDBOOK NOT BE CITED AS A HAVE TO COMPLY. IS FOR GUIDANCE IF REQUIREMENT. ONLY. IS, THE THIS HANDBOOK SHALL CONTRACTOR DOES NOT
IT
MIL-HDBK-217F, Notice 2 provides the study (see Ref. 37 listed in Appendix C): b
q
following
changes based
upon a recently completed
Revised
resistor
and capacitor
models,
including
new models to address
chip devices.
Updated failure rate models for transformers, connectors, printed circuit boards (with connections. A new model to address surface mounted
coils, motors, relays, and without surface
switches, circuit breakers, mount technology) and
. .
technology solder connections.
A revised Traveling Wave Tube model based upon data supplied by the Electronic Industries Association Microwave Tube Division. This further lowers the calculated failure rates beyond the earlier modifications made in the base document (MIL-HDBK-217F, 2 December 1991). Revised the Fast Recove~ reevaluation of Ref. 28. Power Rectifier base failure rate downward based on a
Notice 2.0 MIL-HDBK-217F, errors in the basic F Revision.
1, (10 July
1992)
was
issued
to correct
minor
typographical
document), (2 December 1991) provided the MIL-tiDBK-217F, (base 3.0 changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C): 1. New failure rate prediction models are provided for the following
microcircuits:
q
following
nine major
classes
of
Monolithic Monolithic Monolithic (including Monolithic Monolithic Monolithic Hybrid
Bipolar
Digital and Linear Gate/Logic Gate/Logic
Array Devices Array Devices
MOS Digital and Linear Bipolar and MOS Digital
Microprocessor
Devices
Controllers) Bipolar and MOS Memory Devices GaAs Digital Devices

GaAs MMIC Devices
Microcircuits Bubble Acoustic
Magnetic Surface
Memories Wave Devices
new prediction models for bipolar and MOS The 2 December 1991 revision provided up to 60,000, linear microcircuits with up to 3000 microcircuits with gate counts and co-processors up to 32 bits, transistors, bipolar and MOS digital microprocessor memory devices with up to 1 million bits, GaAs monolithic microwave integrated circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 The C, factors have been extensively revised to reflect new technology transistors. dewces with Improved reliability, and the activation energies representing the temperature sensltwlty of the dice (nT) have been changed for MOS devices and or memories The
Supersedes
wlBaiaKa
Ufi II M1iw ~av~
page VII of Revision
F, NotIce 1
Vll
~ a IVusw
MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains
unchanged
from the prewous
Handbook
version,
but includes
pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed dual New values have been included for the quality factor (XQ), the learning in-hne packages. factor (~~), and the environmental! factor (nE). The model for hybrid microcircuits has been revised to be simpler to use, to delete the temperature dependence of the seal and interconnect failure rate contributions, and to provide a method of calculating chip junction temperatures. 2. A new model for Very High Speed Integrated Circuits (VHSIC/VHSiC Large Scale Integration (VLSI) devices (gate counts above 60,000). The reformatting A reduction A revised of the entire handbook to make it easier to use. factors (zE) from 27 to 14. Like) and Very
3. 4. 5. 6.
in the number failure
of environmental
rate model for Network
Resistors. on data supplied by the Electronic
Rewsed models for Industries Association
TWS and Klystrons based Microwave Tube Division.
1.0 SCOPE
- This handbook Is for guidance only and shall not be cited as a Purpose 1.1 requirement. ff it la, the contractor does not have to comply (see Page 1-2). T he purpose of this handbook is to establish and maintain consistent and uniform methods for estimating the inherent reliability (i.e., the reliability of a mature design) of military electronic equipment and systems. It provides a common basis for reliability predictions during acquisition programs for military It also establishes a common basis for comparing and evaluating electronic systems and equipment. The handbook is intended to be used as a tool reliability predictions of related or competitive designs. to increase the reliability of the equipment being designed. 1.2 Appllcatlon - This handbook contains two methods of reliability prediction - Part Stress Analysis in Sections 5 through 23 and Parts Count in Appendix A. These methods vary in degree of information needed to apply them. The Parl Stress Analysis Method requires a greater amount of detailed information and is appl=ble during the later design phase when actual hardware and circuits are being designed. The Parts Count Method requires less information, generally part quantities, quallty level, and the application environment. This method is applicable during the early design phase In general, the Parts Count Method will usually result in a more and during proposal formulation. consewative estimate (i.e., higher failure rate) of system reliability than the Parts Stress Method.
Supersedes
page
1-1
of Revision
1-1
MI L-I-IDBK-217F
NOTICE 2
1.0
SCOPE
COMMANDER,
R-
LABORA~RY (AFMC), AlTN:
RL/ERsR,
lat.
s.
mm= of
SUBJECT:
-li~ili~ Notice 2 to ~-xDBK-217F, Elecwodc lz@gX=t , EOjact REU-0074 to s~ printing

the subject aotico
Redictim
Prior
for be made:
q
Point
ard tistrtitia,
the
to
follas
tha
DoD
additions
Six@O
Stock
nwt
ACrOSS
the
cover
in
BIG
BOLD BLACK LZITERS
- Au
CAM:
bert
EZIS
q
HAZUX)BOOK
XS FOR ~
-Y.
mmrm~s 1.0: M mEs NOT MS
mcunENT~A~ xn the FOREWORD (Page vii of Notice 2 ) , ~agr~h THIS HANDBOOK 1S POR GUIDAN= ONLY. msEANDBoox~~ ~R IFrrxs, m BE CXTZD AS A ~.
HAVE
m
an
COMPLY.
Add
entry for the SCOPE* pua4m@ 1.1 (~e) : handbook is for guibce only and shall not be citd as a the contrmtor &e8 not have to If it ia, requir~t. coa@y .
If YOU have anY uuestim contact Ma. Carla J~ .
r~
thb
reQueat , plea-
Waltez
B.
Be%
, 11
+ Chaiman, Defense Standada Council

cc :
=mrQV--t
OVSD(A&T)~~&E/SE,
Mr. M. Zsak
1-2
s
New Page -. Ma 1 I 1 1
2.0
REFERENCE
DOCUMENTS
This handbook cites some specifications which have been cancelled or which describe devices that are not to be used for new design. This information is necessary because some of these devices are used in so-called off-the-shelf equipment which the Department of Defense purchases. The documents cited in this section are for guidance and information.
SPECIFICATION MIL-C-5 M! L-R-l 1
SECTION #
TITLE
10.1
9.1 9.1
Capacitors, Fixed, Mica Dielectric, General Specification for Resistor, Fixed, Composition (Insulated), General Specification for Resistor, Variable, Wirewound (Low Operating Temperature) General Specification for Capacitor, Fwed, Ceramic Dielectric (Temperature Compensating), Established Reliability and Nonestablished Reliability, General Specification for Resistor, Variable, Wirewound (Power Type), General Specification for
Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General Specification for
MIL-R-19
MIL-C-20
10.1
MIL-R-22 MIL-C-25
9.1 10.1
MIL-R-26 MIL-T-27
9.1 11.1
Resistor, Ftxad, Wirewound (Power Type), General Specif~ation for

Transformer and Inductors (Audio, Power, High Power Pulse), General Specifiition for Capacitor, Fued
MIL-C-62
10.1
Electrolytic (DC, Aluminum, Dry Ekctrotyte, Poladzad), General Specification for
MIL-G81 MIL-C-92 MIL-R-93 MIL-R-94 MIL-V-95 W-L-1 11 W-C-375 W-F- 1726 W-F-1814 MIL-C-3098 MIL-C-3607
10,1 10.1
9.1 9.14 23.1 20.1 14.5 22.1 22.1 9.1 5!1
Capacitor, Variable, Ceramic Dielectric, General Specification for Capacitor, Variable, Air Dielectric (Trimmer), General Specification for Resistor, Fixed, Wirewound (Accurate), General Specification for Resistor, Variable, Composition, General SpecMcation for
Vibrator, Interrupter and Self-Rectifying, General Specification for

Lamp, Incandescent Miniature, Tungsten Filament Circuit Breaker, Molded Case, Branch Circuit and Sewice Fuse, Cartridge, Class H (this covers renewable and nonrenewable) Fuse, Cartridge, High Interrupting Capacity Cqmtal Unit, Quartz, General Specification for Connector, Coaxial, Radio Frequency, Series Pulse, General
Specifications MIL-C-3643 51
for
Connector, Coaxial, Radio Frequency, Series HN and Associated Fittings, General Specification for
Supersedes
page 2-1 of Revision F tiz~
2-1 a u
-- 3..
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-G3650 MIL-C-3655
15.1 15.1
Connector, Coaxial, Radio Frequency, Series LC
Cormector, PIIJg and Receptacle, Electrical (Coaxial Series Twin) and

Associated Fittings, General Specification for
MIL-S-3786
14.3
Swrtch, Rotary (Circuit Selector, Low-Current (Capacity)), General Specification for Switch, Toggle, Environmentally Sealed, General Specification for
MIL-S3950 MIL-G3965
14.1
10.1
15.1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General Specification for Connector, Electrical, Ckoular Threaded, AN Type, General Specification for Fuse, Current Limiter Type, Akcraft Switches, Toggle, Electrically Held Sealed, General Specification for Relays, Electromagnetic, General Specification for
MIL-C+O15
MIL-F-5372 MIL-S-5594 MIL-R-5757 MIL-R-6106
22.1
14.1 13.1 13.1
Relay, Electromagnetic (Including Established Reliability (ER) Types), General Specification for Lamp, Incandescent, Aircraft Service, General Specification for
ML-L-6363 MIL-S-8805
20.1 14.1, 14.2
Switches and Swttch Assemblies, Sensitive and Push (Snap Action), General Spedkatiin for Switches, Toggle, Positive Break General Specification for Switches, Pressurer Aircraft, General Specification for
MIL-S-8834 MIL-S-8932 MIL-S-9395
14.1 14,1 14,1
Switches, Pressure, (Absolute, Gage, and Differential), General Specification for Switch, Toggle, Momentary Four Position On, Center Off, General Specification for
Meter, Electrical Indicating, Panel Type, Ruggedized, General Specificatmn for Resistor, Fixed Film (High Reliability), General Specification for Capacitor, Fixed, Mka Dielectric, Button Style, General Specification for Capacitor, Fixed, Ceramic Dielectric (General Purpose), General Specification for Capacitor, Fixed, Glass Dielectric, General Specification for
MIL-S-9419
14.1
MIL-M-10304
18.1
MIL-R-10509 MIL-GI0950
9.1 10,1
MIL-C-11OI5
10.1 10.1
MlL-C-l 1272
2-2
Supersedes
page 2-2 of Revision F
2.0
REFERENCE
DOCUMENTS
MlL-C-l 1693
10.1
Capacitor, Feed Through, Radio Interference Reduction AC and DC,

(Hermetkally Sealed in Metal Cases) Estabiishd Reliability, General Specificatbn for and Nonestablished
MlL-R-l 1804 MIL-S-12211 MlL-S-l 2285 MIL-S-12883
9.1 14,1 ?4.1 15.3
Resistor, Fixed, Film (Power Type), General Specificatmn for Switch, Pressure Switches, Thermostatic Sockets and Accessories for Plug-h Electronic Components, General Specification for Capacitor, By-f%ss, Radio - Interference Reduction, Paper Dielectric, AC and DC, (Hermetically Sealed in Metaiiic Cases), General Specificatbn for Resistor, Variabie, Wirewound, Precision, General Specification for Switch, Sensitive: 30 Votts Direct Current Maximum, Waterproof
MIL-G12889
10.1
M!L-R-12934 MIL-S-13484 MIL-C-13516 MIL-S-13623 MIL-R-13718 MIL-S-13735 MIL-G14409
9.1 14.1 14.2 14.1

13.1 14.1 10.1
Circuit Breakers, Manual and Automatic (28 Voits DC) Switches, Rotary: 28 Voit DC Reiays, Electromagnetic Switches, Toggle: 28 24 Volt DC
volt DC
Capacitor, Vadable (Piston Type, Tubuiar Trimmer), General Spectfioatbn for Fuse, instrument, Power and Teiephone Switches, Rotary, Snap Action and DetenVSpring Return Action, General Specification for Coils, Electrical, Fixed and Variable, Radio Frequency, Generai Specification for Couplers, Directional, Generai Specification for Fiiters and Capacitors, Radio Frequency Interference, Generai Specification for Switches,
MIL-F-15160 MIL-S-1S291
22.1 14.1
MIL-C-15305
11.2
MIL-G15370 MIL-F-15733
15.1 21.1
MIL-S-15743 MIL-G18312
14.1 10.1
Rotary, Enclosed
Capacitor, Fixed, Metallized (Paper, Paper Piastic or Piastic Film) Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General
Specification for
MIL-F-18327 21.1
Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual Functioning, General Specification for
Supersedes
page 2-3 of Revision
2-3
tvllL-HDBK-217F NOTICE 2
2.0
REFERENCE
DOCUMENTS
ML-R-18546
9.1 6.0 13.1 13.1

10.1
Resistor, Fixed, Wkewound (Power Type. Chassis Mounted), General Specification for Semiconductor Device, General Specification for Relays, Control Relay, Time, Delay, Thermal, General Specif~atkmfor Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically SeaJed in Metal, Ceramic or Glass Cases), Established and Nonestablished ReliaMlity, General Specificatbn for Transformer, Puke, Low Power, General Specification for Connedor, Electrical, Printed Wking Board, General Purpose, General Specification for Switches, Lquid Level, General Specification for Ccmnectors, Plug and Receptacle - Electrical Rectangular, Polarized Shell, Miniature Type Resistor, Variable, Nonwirewmnd Specification for Switches, Sensitive Resistor, FMed, Film, Insulated, General Specifioatiin Switches, Code Mcating for In-1ine (Adjustment Types), General
MlL-S-l 9500 MIL-R-19523 MIL-R-19648 MIL-G19978
MIL-T-21038 MIL-G21097
11.1
15.1
MIL-s-212n MIL-G21617
14.1 15.1
MIL-R-22097 MIL-S-22614 MIL-R-22664 MIL-S-2271O
9.1
14.1 9.2 14.4
Wheel (Printed Circuit), (Ttwmbwheel,
and Pushbutton), General Specification for MIL-S-22865 MIL-G22992

14,1 15.1 Switches, Pushbutton, Illuminated, General Specifution for Connectors, Plugs and Receptacles, Electrical, Water-ProOf, Quick HeavyDutyType, General Specification for Di-nnect, Capacitors, Fixed or Specification for
MIL-C23163
10.1
Variable, Vacuum or Gas Dielectric, General
MIL-CX23269
10.1
Capacitor, Fixed, Glass Dielectric, Established Reliability, General Specification for Resistor, Variable, Nonwirewound, General Specificatmn for Fuse, Caflridg8, Instrument Type, General Specification for Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General Specification for Connector, Plug-Receptacle, Female, 7.5 Amps Connector, Plug-Receptacle, 7.5 Amps Electrical, Hexagonal, 9 Contacts,
MIL-R-23285 MIL-F-23419 MIL-T-23648
9.1 22.1 9.1
MS-24055
15.1
MS-24056
15.1
Electrical, Hexagonal, 9 Contacts, Male,
2-4
Supersedes
2.0
REFERENCE
DOCUMENTS
MIL-C-24308
15.1 14,1
Connectors, Eiectric, Rectangular, Nonerwironmental, Miniature, Polarized Shell, Rack and Panel, General Specdicatbn for Switches, Mu!tistation, Pushbutton (Illuminate General Specification for and hlon-l!luminated),
MIL-S-24317
MIL-C-25516
15.1
Connector, Electrical, Miniature, Coaxial, Environment Resistant Type, General Specification for Connector, Electrical (Wcular, Miniature, Quick Disconnect, Environment Resisting), Receptacles and Plugs, General Specificatbn for Connectors, General Purpose, Electrical, Miniature, Ckcular, Environment Resisting, General Spedficatbn for Resistor, Variable, Wlrewound, Nonprecison, General
MIL-C-26482
15.1
ML- C-26500
15.1
MIL-R-27208
9.1
Specificatmn for
MIL-C-28731
15.1
Connectors, Electrical, Rectangular, Removable Contact, Formed Blade, Fork Type (For Rack and Panel and Other Applicatbns), General Specification for Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder Type and Crimp Type Contacts, General Specifiiion for Relay, Sold State, General Specification for Connectors, Plug and Receptacle, Electrio Rectangular, High Density, Polarized Center JackScrew, General Specification for, Inactive for New Designs Connector, Electrical, Circular Threaded, High Density, High Shock Shipboard, Class D, General Specification for Microcircuits, General Specification for Sockets, Chip Carrier, Ceramic, General Specification for Hybrid Micmcirdts, Integrated Wcuits SpedficatiOn for General Specification for (Microcircufis) Manufacturing, General
MIL-C28748
15.1
MIL-R-28750 MIL-C-28804
13.2 15.1
MIL-G28840
15.1
MIL-M-3851O MIL-S-385= MIL-H-38534 MIL-I-38535
5.0 15.3 5.0 5.0
MIL-G38999
15.1
Connector, Ekctrical, Circular, Miniature, High Density, Quick Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment Resistant, Removable Crimp and Hermetic Solder Contacts, General Specification for
MIL-G39001
10.1
Capacitor, Fixed, Mica-Dielectric, Established Reliability, General Specification for

Resistor, Variable, Wkewound, Semi-Precision, for General Specification
MIL-R-39002
9.1
MIL-C-39003
10.1
Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum, Established Reliability, General Specification for
Supersedes
2-5
2.0
REFERENCE
DOCUMENTS
MIL-R-39005 9.1
Resistor, Fixad, Wirewound (Accurate), Established Reliability, General Specification for Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum Established Reliability, General Specification for Resistor, Fixed, Wkewound (Power Type), Established Reliability, General Specification for Resistor, Fixed, Composition (Insulated), Established Reliability, General Specification for Resistor, Fixed, WmMVOund (Power Type, Chassis Mounted) Established Reliabiiii, General Specification for Coils, Electrical, FMed, Radio Frequency, Molded, Established Reliability, General Specification for Connector, Coaxial, Radio Frequency, General Specification for Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established Reliability, General Specification for Resistor, Variable, Wlrewound (Lead Screw Actuated), Established ReliatWty, Genera! Specification for Relay, Electromagnetic, for Established Reiiabiiity, General Specification
MIL-G39006
10.1
MIL-R39007
9.1
MIL-R-39008
9.1
MIL-R-39009 MIL-G3901O MIL-C-39012 MILC-39014
9.1 11.2 15.1 10.1
MIL-R-39015
9.1 13.1
MIL-R-39016
MIL-R-39017
9.1
Resistor, Fued, Fiim (Insulated), Established ReiiabNty, General Specif.kdon for Capacitor, Fwed, Ekctrofytic (Aluminum Oxide), Established Reliability and Nonestablished Reliability, General Specification for Circuit Breakers, Magnetic, Low Power, Seaied, Trip-Free, General Specification for Capacitors, Fixed, Metaiiued, Paper-Plastic Film or Piastic Film Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal or Ceramic Cases), Established Reliability, General Specification for Resistor, Variabie, Nonwirewound, Precision, Generai Specification for Resistor, Variable, Nonwirewound (Adjustment Type), Established Rel.&ility, General Specification for Switch, Rotary Connectors, Piugs and Receptacle, Eiectricai Triaxiai, Radio Frequency, Generai Specification for Connectors, Plug and Receptacle, Teiephone, Eiectrcal, Subassembly and Accessories and Contact Assembiy, Electrical, General Specification for Printed Wiring Board, General Specifi~tion Resistor,
FIxd,
MIL-C-39018
10.1
MIL-G39019
14.5 10.1
MIL-C-39022
MIL-R-39023 MIL-R-39035
9.1 9.1
MIL-S-45885 MIL-C-49142
14.1 15.1
MIL-G55074
15.1
MIL-P55110
MIL-R 55182
15.2 91
for
Film, Es!abl(shed Reliability, General Specification for
2-6
Supersedes
MII--HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-55235 MIL-C-55302 MIL-A-55339
15.1 15.1 15.1
Connectors, Coaxial, Radio Frequency, Series TPS Connector, Printed Circuit, Subassembly and Aaessories
Adaptors, Connector, Coaxial, Radio Frequency, (Between Series and Within Series), General Specification for Resistors, Fixed, Film, Chip, Established Reliability, General Specification for Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability, General Specification for Swhches, Reed, General Specification for Capacitors, Freed, Plastic (or Metallized Plastic) Dielectric, DC or DCAC, In Non-Metal Cases, Established Reliability, General Specification for ) Circuit Breaker, Magnetic, Unsealed, or Panel Seal, Trip-Free, General Specification for Transformer, Intermediate Frequency, Radio Frequency and Discriminator, General Specification for Capacitor, Chip, Multiple Layer, Fixed, Unencapsulated Ceramic Dielectric, Established Reliability, General Specification for
MIL-R-55342
9.1
MIL-C-55365
10.1
MIL-S-55433 MIL-C-55514
14.1 10.1
MIL-G55629
14.5
MILT-55631
11.1
MIL-G55681
10,1 15.1
MIL-G8151
Connedor, Electriil,
Circular, Hgh Densky, Ouick Disconnect, Environment Resisting and Accessories, General Specification for
Switches; Toggle, Hermetically Sealed, General Specification for Connectors, Electrical Rectangular, Crimp Contact
MIL-S-81551 MIL-C-81659 MIL-S-82359 MIL-(X3383
14.1 15.1 14.1 14.5
Switch, Rotary, Variable Resistor Assembly Type Circuit Breaker, Remote Control, Thermal, Trip-Free, General Specification for Resistor Networks, Fixed, Film and Capacitor-Resistor Networks, Ceramic Capacitors and Fixed Film Resistors, General Specification for Capacitors, Freed Metallued Plastii Film Dielectric (DC, AC or DC and AC) Hermetically sealed in Metal or Ceramic Cases, Established Reliabil~, General Specification for Coils, Radio Frequency, Chip, Fixed or Variable, General Specification for Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Cathode, General Specification for
Switches, Dual In-Line Package (DIP), General Specification for Connector, Electrical, Rectangular, Microminiature, Polarized Shell, General Specification for
MIL-R-83401
9.1
MIL-C-83421
10,1
MIL-C+3446
11.2
MIL-C-83500
10,1
MIL-S-83504 MIL-C-83513
14,1 15.1
New Page
2-7 _-e_-. --==a===.a . ____ ____ ---- .. -- .-A. ...._. ___ _- ..
MIL-HDBK-217F
NOTICE 2
2.0
REFERENCE
DOCUMENTS
MIL-C-83515
15.1
Connectors, Telecommunication, for
Polarized Shell, General Specification
MIL-R-83516 MIL-C-83517
13.1 15.1
Relays, Reed, Dry, General Specification for Connectors, Coaxial, Radio Frequency for Coaxial, Strip or Microstrp Transmission Line, General Specification for
MIL-R-83520
13.1
Relays, Electromechanical, General Purpose, Non-Hermetically Sealed, Plastic Enclosure (Dust Cover), General Specification for Connectors, Plug and Receptacle, Electrical, Rectangular Muttiple
Insert Type, Rack to Panel, Environment Resisting, 15~C Total Continuous Opemting Temperature, General Specification for
MIL-G83527
15.1
MIL-R-83536
13,1
Relays, Electromagnetic, for
Established Reliability, General Specification
MIL-C-83723
15.1
Connector, Electrical (Circular Environment Resisting), Receptacles and Plugs, General Specification for Relay, Vacuum, General Specification for Relays, Hybrid and Solid State, Time Delay, General Specification for
M!L-R-83725 MIL-R-83726
13.1 13.1, 13.2, 13.3 14.1 15.1
MIL-S-83731
Switch, Toggle, Unsealed and Sealed Toggle, General Specification
for
MIL-G83733
Connector, Electrical, Miniature, Rectangular Type, Rack to Panel,

Envhnment Resistkg, XKYC Total Continuous Operating Temperature, General Specifiiion for
MIL-S-83734
15.3
Sockets, Plug-In Electronic Components, Dual-In-Line (DIPS) and Single-In-Line Packages (SIPS), General Specification for
MIL-M5028
15.1
Connector, Electrical, Rectangular, Individual Contact Sealing, Polarized Center JackScrew, General Specification for
STANDARD MIL-STD-756 MIL-STD-683 MIL-STD-975 MIL-STD-1547

Reliability Modeling and Prediction Test Methods and Procedures for Microelectronics NASA Standard Electrical, Electronic and Electromechanical (EEE) Parts List Electronic Parts, Materials Technical Requirements for and Processes for Space and Launch Vehicles,
MIL-STD-1772
Certification Requirements for Hybrid Microcircuit Facilities and Lines
Copies
functions
of specifications
directed by the contracting officer. Single copies are also available (without charge) upon written request to:
Standardization Oocument Order Desk, 700 Robim AVe , Wilding ~, section D, Ph(ladelphla, PA 19111-5094, (215) 697-2667
and standards required should be obtained from the contracting
by Contracbrs activity or as
in connection
with specific
acquisition
2-8
New Page
MIL-HDBK-217F
NOTICE
5.1
MICROCIRCUITS,
GATE/LOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION 1. Bipolar Devices, Digital and Linear Gate/Logic Arrays 2. MOS Devices, Digital and Linear Gate/Logic Arrays 3. Field Programmable Logic Array (PLA) and Programmable Array Logic (PAL) 4, Microprocessors kp = (cl fi~ + C2fiE)
~QfiL ailures~l 06
Hours
T I t
Digital and Linear Gate/Logic Array Die Complexity Failure Rate - Cl PLA/PAL Linear Digital No. Gates c, No. Transistof$ No. Gates I c, 100 to 101 to 1,000 1,001 to 3,000 3,001 to 10,000 10,001 to 30,000 30,001 to 60,000
1
c,
.0025 .0050 .010 .020 .040 .080
1 to 101 to 301 to 1,001 to
100 300 1,000 10,000
.010 .020 .040 .060
up to 200 201 to 1,000 1,001 to 5,000
.010
.021 .042
Linear and Digital Gate/Logic Array Die Gomplex~ Failure Rate -Cl v Linear No, Transistor
Digital No. Gates 1 to 100

1,000
c,
c, .010 .020 .040 .060
PLA/PAL No. Gates

up to 500
c,
.00085
.010
.020 .040 .080 .16 .29
1
101 301 1,001
101
to
1,001 to 3,000 3,001 to 10,000 10,001 to 30,000 30,001 to 60,000
to to to to
100 300 1,000 10,000
501 to 1,000 2,001 to 5,000 5,001 to 20,000
.0017 .0034 .0068
NOTE:
For CMOS gate counts above 60,000 use the Vi+ SIC/VHSIC-Like
modei In Section
5.3
E=F== 7
Up to 8 .060
.12 .24 ,14
rocm Die Complexi~ Failure Rate - Cl MO.S c,
All Other Model Parametefs Refer to Parameter 1

XT
Section 5.8 section 5,9 Section 5.10 A
C2 7tE, flQ, XL
Up to 16
Up to 32 L
.28
,56
Supersedes - _=...= ------
page
5-3
of Revision
.
5-3 F All GAQ =*Q AW -w......-.
,-- -----
_____ -_ _ _
baw. - -....-=
--
----
MIL-HDBK-217F
5.2
MICROCIRCUITS,
MEMORIES DESCRIPTION 1. Read Only Memories (ROM) 2. Programmable Read Only Memories (PROM) 3. Ultraviolet Eraseable PROMS (UVEfROM) 4. Flash, MNOS and Floating Gate Electrically Eraseable PROMS (EEPROM). Includes both d floating gate tunnel oxide (FLOTOX) and texture polysilicon type EEPROMS 5. Static Random Access Memories (SRAM) R ~vnamic Random Access Memories (DRAM)
w. _=. .
kp=(C1XT+C2YCE+
Acyc) XQ XL
Failures/l
05 Hours
Die Complex~
PROM,
Failure Rate - Cl MOs

SRAM
Bipolar
(MOS & BiMOS) ROM, PROM
t ,
Memory
Size, B (Bits)
ROM
UVEPROM* EEPROM, mPROM .00085 .0017 .0034 .0068
DRAM
SRAM
up to 16K 16 K< BSWK 64K<BS2%K 256K < B s IM ,
.00065
.0013
.0026 .0052
.0013 .0025 .0050 .010
.0078 .016 .031 .062
.0094 .019 .038 .075
.0052
.011
.021 .042
A2 Faaor for LCYCCalculation + + Fatior for Acyc Calculation

Textur8dFlotoxl Pol?
Total No. Of prograrnmin9

Cycles Over ~EPROM Life, C
L
v
Total
NO. Of
Programming Cycles \OM Life, C OV&%PF

up to 300K
Textured-Poiy
I
A2
1
o
1.1 2.3 Parametem Refer to Section 5.8
100 100< c s 200

Jp to
.00070 .0014
.0034 .0068 .020 .049 .10
.0097
.014 .023 .033 .061 .14 .30
300K c C s 400K 400K < C s 500K A!! Other Model parameter XT
200< CS 500 500<cs1K 1K<CS3K 3K<CS7K 7K<CS15K
15K < C s 20K 20K < C s 30K 30K< C s 100K 100K < C s 200 K 200K < C s 400 K
.14 .20 .68 1.3

2.7 3.4
.30 .30 .30 .30

,30 .30 1
C2 ~E,
k Cyc
~Qt XL
section 5.9
Section 5.10
400K < C s 500 K
(EEPRoMs
only)
Page 5-5
1.
2.
Al= Poly.
6.817 X 10-6 (C) equation
No underlying
for TexturedL ~yc = 0 For a}! other devices
MIL-HDBK-217F
NOTICE 2
5.2 MICROCIRCUITS, MEMORIES
EEPROM
ReadWrite
Cycling Induced Failure Rate - Acyc

?bO = Cyc
All Memo~ Devices Except Flotox and Textured-Poly EEPROMS Flotox and Textured
A*B2
Poly EEPROMS
~[
c=
Al
B, + ~ 1
ECC
Al B4 A2
02
ltQ
Page 5-4 page 5-6 A Apu

02-0
Sectiorl
P* Page 5-4 page 5-6 Page 5-5 pie 5.1o 5-6 Sedion 5.1o
Error Corredmn Code (ECC) 1. No On-Chip ECC
Options:
fi~~~
= 1.0
%CC ECC
~~~c
=1.0 = .72
= .66
~EcC
= .72
2. On-Chip t-tammi~ 3. Two-Needs-One
Code
~EGC = =
Redutiant Cell APP~ti
IW)TES:
1. 2. 3.
See Referen@ 24 for rnodeliWl off~~p schemes at the memq system level.
If EEPROM type is unkmw,
error detectbn and com@bn
assure
Fbtox.
some EEPROM manufadurem have inco~rated Error Coff@ion Code Opt@ns: on+hip error corred~n cimuitfY into their EEPROM devwes. This is represetied by Other manufadurem have taken a redundant cell the on-chip hammin9 code entw. apprOach whiih imrpo~~ an extra storag9 transistor in Ovefy memo~ Cell. Thk is represe~ed by the two-needs~ne redutia~ cell ent~. The Al ancf
4.
factom shown in Section 5.2 wem deveb~d

For EEPROMS
system Iiie of 10,000 operatin9 hours. s~nifiatily longer or shofier expe~ed Iiietimes the Al and ~ factom should be ~ttiplied by: System Lifetime Operating Hours 10,000
used in systems with
based on an assumed
\ I
5-5 Supersedes page 5-5 of Revision F
5.2
MICROCIRCLJITS,
MEMORIES
II
m
4
iii +
$!
8 t?
II
I
n
mt+
z
m
5-6
T
Supersedes
:----V.-d.
-r.,
MIL-HDBK-217F
NOTICE 2
5.5 DESCRIPTION Hybrid Microcircuits
~= Nc kc = = [z Nc kc] (I + .2zE ) YCFnQZL Fail.reN106 Ho.m
MICROCIRCUITS,
HYBRIDS
Number of Each Particular
Component Component
Failure Rate of Each Pafiicular
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate for each component type used in the hybrid and then sum them. This summation is then modified to account for the overall hybrid function (XF), screening level (@, a~ matUritY (XL). The hybfid Packa9e failure rate is a function of the active component failure modified by the environmental factor (i.e., (1 + .2 ~E) ). Onw the component types listed in the folbwing ti3bi8 are considered to contribute S@ItiiCWItly to the overall failure rate of most h@rids. All other component types (e.g., resistors, inductors, etc.) are constiered to contribute insignif~ntty to the overall hybrid failure rate, and are assumed to have a failure rate of zero. This simplificationis valid for most hybrids; however, if the hybrid consists of mostly passive cornmments then a failure rate should be calculated for these devices. If factorina in other com~onent . for these calculatbk. = Hybrid Case Temperature aWme ~Q = f, XE1 and TA
type~,
Determination
of kc Make These Assumptions When Determining
Determine kc for These Component Types

Microcircuits
Handbook Section
xc 5 c2=0~zQ=1~ Smion 5.12, ~p = 1, TJ as Determined from = O (for WWC).
Discrete Semiconductors
ZQ = 1, nA = 1, TJ as Determined from Section 6.14, nE = 1.
Capacitors
10
~=lTA
Hybrid Case Temperature,
I?cpl.
NOTE: tf maximum rated stress for a die is unknown, assume the same as for a discretely package die of the same type. If the same die has several ratings based on the discrete packaged type, assume the lowest rating. Power rating used should be based on case temperature for discrete semiconductors.
Circuit Function Factor Circuit Type Digital

Video, 10 MHz< f <1 GHz Mcrowave, f >1 GHz
F ~F
All Other Hybrid Model Parameters I I

~~,
~Q,
1.0
1.2 2.6 5.8 21
~E
Refer to Section 5.10
Linear, f <10 MHz Power
MIL-HDBK-217F
5.6
MICROCIRCUITS,
SAW DEVICES DESCRIPTION Surface Acoustic Wave Devices
Quality Factor - ZQ Screening Level 10 Temperature Cycles (-55C to +125C) with end point ektrkd tests at temperature extremes.
None beyond best commetil
7CQ
Environmental Factor - nE Environment GB % ~E .5 2.0 4.0 4.0 6.0 4.0 5.0 5.0 8.0 8.0 .50 5.0 42 220
.10
1.0
% Ns Nu Alc IF %c
UF
practices.
RW SF MF ML CL
5-1o
MIL-HDBK-217F
NOTICE 2
5.13
MICROCIRCUITS,
EXAMPLES
-iimr imim
No. of Pins
Power Dissipation, pD (W) Area of Chip (in.*)
8 .33 14 .35 .0065 19.4 72
%rFFir
3 .6 .0025 50.3 95
TrFiF
3 .6 .0025 50.3 95
Si Diode 2 .42 .0022 56.3 89
Source Vendor Spec. Sheet Circuit Analysis Equ. 2 Above Equ. 1 Above Equ. 3 Above
.0041 30.8 75
eJ~(%NV)
TJ (%)
2.
Calculate Failure Rates for Each Component:

A) LMI 06 Die, 13 Transistors (from Vendor Spec. Sheet)
Section 5.1 Because C9 = O; XT: %WiOn 5.8; XQ, XL Defau~ to 1.0

, = B)
(.01)(3.8)(1)(1) = .038 Failure#l 06 Flours
LM741 Die, 23 Transistors. Use Same Procedure as Above. $ = cl XT ~Q

XL =
(.01)(3.1)(1)(1) = 031 ailured106

5W (From Vendor ~ec.
oum
VcE~CE() = .6,
c)
Sificon NPN Transistor, Linear Application

~ =
=
Rated
Power=
Sheet),
%~T~AnR%ZQXE
SOCtiOn 6.3; nA,
~Qt
~E
oefau~
to
1.0
(.00074) (3.9)(~ .0)(1 .8)(.29) (1)(1) .0015 Failures/l 06 Hours
D) Silicon PNP Transistor, Same as C. .0015 Failures/l 06 Hours

E)
SiliconGeneral Construction. P = = =
Purpose Diode (Analog), Voltage Stress = 600/, Metallurgically Section 6.1;
Bonded
k) T
% C Q E (.0038)(6.3)(.29)(1)(1)(1)
.0069 Failures/l 06 Hours
ZQJ
XE
Defau~
to
1.0
Supersedes
5-23
MII--HDBK-2I
7F
NOTICE 2
5.13
MICROCIRCUITS,
F)
EXAMPLES
Ceramic Chip Capacitor,

A=
Vottage Stress = 50Y0, for the Hybrid, 1340 pF, 125C Rated Temp. CASE P = = = lb ncv ~Q ~E Section 06 Hours 10.1 1; XQ, ~E Default to 1.0
(.0028)(1.4)(1)(1) .0039 Failures/l
G)
Thick Film Resistors, per instructions in Section 5.5, the contribution of these devices is considered insignificant relative to the overall hybrid failure rate and they may be ignored.
%
~E
[Z NcLc](l
6.0
5.8 1
+.27cE)71F7ypL Section 5.10 Section 5.5 Section 5.10 Section 5.10
= =
=
fiF
ICQ
XL
= =
1 [
(1)(.038)+ (1)(.031)+
(2) (.0015)+
(2)
(.0015) (5,8) (l)(1)
+ (2)(.0069) + (2)(.0039) ](1 + .2(6.0))

=
1.2 Failures/l 06 Hours
5-24
Supersedes
page 5-24 of Rewsion F
MIL-HDBK-217F
6.0
DISCRETE
SEMICONDUCTORS,
INTRODUCTION
The semiconductor transistor, diode and opto-electronic device sections present the failure rates on the basis of device type and construction. An analytical model of the failure rate is also presented for each The various types of discrete semiconductor devices require different failure rate device category. models that vary to some degree. The models apply to single devices unless otherwise noted. For multiple devices in a single package the hybrid model in Section 5.5 shouid be used.
quality levels
The applicable MIL specification for transistors, and optoelectronic (JAN, JANTX, JANTXV) are as defined in MIL-S-19500. The temperature
devices is MlL-S-l
9500.
The
factor (XT) is based On the device Junction temperature
Ju~tiOn
temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction to case thermal resistance. Determination of jmctbn temperatures is expiairwd in Section 6.14. Reference 28 should be consulted for further detailed information on the modeis appearing h!this sect ion.
6-1
6.1
DIODES,
LOW
FREQUENCY
DESCRIPTION Low FrequenCy Diodes: General Purpose Analog, Switching, Fast Recovery, Power Rectifier, Transient Suppreswr, Current Regulator, Voltage Regulator, Voltage Reference
SPECIFICATION fvllL-s-19500
Base Failure Rate - ~ Diode TyDe/Application ,. -. I %
Temperature Factor - ~
(Voltage Ragukto and Curre TJ (~) 25
%T
Vottage Reference,
S!?94!a
TJ
~)
3.9 4.2 4.5
4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
4
General PUIPOW Analog Switching Fast Recovery Power Rectifier

Power Rectifier/Schoflky power Diode Power Rectifier with High Voltage Stacks Transient SuppressorNaristor Current Regulator Vottage Regulator and Voltage Referencx? (Avalanche
.0038
.0010
.025 .0030 .0050/
Junction
1.0
1.1 1.2 1.4
1.5
105
.0013 .0034 .0020
and Zener)
Terrperatum
(General Purrmse Anak Pov TJ (oC) q
Factor
- XT
Switching, nsient Su
Fast RmvwY,
r sor %T
T ~ (C) 105
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 XT = It= bJ
I
exp
110
115 120 125 130 135 140 145 150 155 160 165 170 175
1.6 1.8
2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7
25
1.0
1.2 1.4 1.6 1.9 2.2 2.6
30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
E
exp
3.0 3.4 3.9 4.4 5.0 5.7 6.4 7.2 8.0
110 115 120 125 130 135 140 145 150 155 160 165 170 175
9.0 10 11 12 14 15 16 18 20 21 23 25 28 30 32
((
-1925
1 - + 273 TJ
1 298
))
Junction Temperature (C)
I
I
~T =
((
.3091
- TJ ~ 273
1 298 ))
?J =
Juncllon Temperature
(C)
1
6-2
Supersedes
t
7.2
TUBES,
TRAVELING
WAVE
DESCRIPTION Traveling Wave Tubes ~ =
+pE
Failures/l
06 Hours
Base Failure Rate - ~

power ~
Environment \ 14 42 42 42 18 61 61 61 Environment GB
Factor - ZF ~E .5
,1 11 11 11 11 11 12 12 12 13 14 15 17
1 12 12 12 12 12 13 13 13 14 15 16 18
2 13 13 13 13 14 14 14 15 15 16 18 20
Frequency (GHz) 6 8 10 4 16 19 24 29 16 20 24 29 16 20 24 29 16202429U@ 1720242943@ 1720253044U 17212631ti 18 22 26 32 19 23 27 33 20 24 29 35 22 26 32 39 24 29 35 43
10 ;Z 1000
I
r
GF
1.5 7.0 3.0 10 5.0 7.0 6.0 9.0 20 .05 11

33
GM Ns
3000 5000 8000 10000 15000 20000 30000 >40000
~~ 51 56 62
S ~y 75 83 91
NU Alc
IF
Uc
UF
k)
P F = -
11(1.00001)P (1.l)F Rated Power In Watts (Pew, lf pum, .001 s P <40,000 Operating Frequency In GHz, .1 S F S 18
is a band, or two different
Am
SF MF
If the operating freque~ i
values, use the geometdc mean of the end point

frequendes when using table.
ML c, I
500
7-3 Supersedes
-----------*-+-*-
MIL-HDBK-217F
7.3
TUBES,
MAGNETRON DESCRIPTION Magnetrons, Pulsed
and Continuous Wave (CW) 06 Hours
Lp = kb7r7cc7tE
Failures/l
P(MW)
.01 .05 .1 .3
.1 1.4
.5 4.6
1 7.6
5 24
10 41
20 67
110 130
Frequency (GHz) 50 30 40 130 110 91
60
150 210 240 300
70
170 230 270 330
80 190
260 290 370
90 200
280 320 400
100 220
300 350 430
1.9
2.2 2.8
6.3
7.2 9.o
10
12 15
34
39 48
56
~ 80
120
140 180 200
.5 : 5 Pulsed
b = F= P=
3.1 3.5 4.4 4.9
10 11 14 16
17 19 24 26
54 : ~
89 100 130 140
150 170 210 230
150 180 220 2@
180 210 260 290
230 2W 310
280 3= 390
~o 410 @
330 380 470 520
370 420 530 Wo
410 470 580 ~o
440 510 830 700
480 550 ~o 760 -
Magnetrons:
19( F)-73 (P)-20 operating FrequenCy in GHz, .15 F <100 .01 SP<5
CW Magnetrons (Ratad Power < 5 KW):

$-18
outout Power in MW,
LMllization Factor - ZI I
u
Environment Environment
%U .44
Factor - nE ~E 1.0
7 Utilization (Radiate HOUN Filament HoufS) 0.0
GB
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
.50 .55
.61 .66 .72 .78 .83 .89 .94
I
I
GF GM
Ns Nu
2.0
4.0 15 I 47
I
*IC
IF
10
16 12 23 80
*UC
Xu =
R =
0,44 + 0.56R
Radiate HourWFilament Hours
I
I
UF
Construction Construction
Factor - nc 7tc
ri 7
ML
Antfil
- nvv
133
CL
2000
CW(RatWPower.5~
Coaxial Pulsed
1.0
Conventional
Pulsed
1.0
5.4
7-4
9.1
RESISTORS
~T Tabie Resistor Style Specification MiL-R11 39008 Description % .0017 Use Column: 1 1
XS Table Use Column: 2 2
Rc RCR
Resistor, Fixed, Composition (Insulated) Resistor, Fixed, Composition (Insuiated) Est. Rel.
.0017
.0037
.0037 .0037 .0037 .0037 .0037 ,0019 .0024 .0024 .0024
RL RLR
RN (R, C Of N) RM RN RD RZ RB RB R RW RWR RE RER RTH RT RTR RR RA RK RP RJ RJR RV RQ RVC
22684 39017
55182 55342 10509 11804 83401 93 39005 26 39007 18546 39009 23648 27208 39015 12934 19 .39002 22 22097 39035 94 39023 23285
Resistor, Fixed, Film, Insuiated Resistor, Fixed, Film (Insulated), Est. Rei.
Resistor, Fixed, Film, Est*iishd ReiiabMy Reiiabiiity
2
2 2 2 2 WA, XT= 1 1 2 2 2
1
1 1 1 1 1 NIA ns = 1
Resistor, Fued, Fiim, Chip, Estabiisti Resistor, Fixed Film (High Sttitiity) Resistor, Fixed, Film (Power TYW) Resistor Networks, Fixed, Film Resistor, Fixed, Wkewound (Accurate) Resistor, Fixed, Wirewound Resistor, Fixed, Whwound
1
1 2
(/@curate) Est. Rel.

(Power TyTw)
ReL Resistor, Fiied, Wkewound (Power Type) Est. Resistor, I%ed, Whewound (Power TYPS, Ch-k Mounted) Resistor, Freed, Whewound (Power Type, Chassis Mounted) Est. Rel. Thermistor, (Thermally Sensitive Resistor), Insuiated Resistor, Variabie, Wirewound (Lead Screw Activated) Resistor, Variable, Wirewound (Lead Screw Activated), Established Reliability Resistor, Variabie, Wwewound, Precision Resistor, Variable, Temperature)
.0024
.0024 .0024 .0019 .0024 .0024 .0024 .0024 .0024 .0024 .0037 .0037 .0037 .00 37 .00 37
2
2 2
2
2 2
N/A, XT=
1 tlrots=~
1 1 1 1 1 1 1 1 1 1 1
2 2 2 1 1 2 2 2 2 1 1
Wkewound (Low Opwating
Resistor, Variable, Wkewound, Semi-Precision Resistor, Wkewound, Power Type Resistor, Variable, Nonwirewound Resistor, Variable, Nonwirewound Est. Rel. Resistor, Variabie, Composition Resistor, Variable, NonwireWound, Precision Resistor, Variable, Nonwirewound
Supersedes
Section 9.0-9.17
of Revision
9-1
MIL-HDBK-217F
NOTICE 2
9.1
RESISTORS
- Power Factor - Xp ,
Column 2 .95 1.1 1.2 1.3 1.4 1.5 lower Dissipation (Watts)
Temperature Factor - XT
T(C) 20 30 40 50 60 70 80 90 100 110 120 130 140 Column 1 ,88 1.1 1.5 1.8 2.3 2.8 3.4 4.0 4.8 5.6 6.6 7.6 8.7 10
np
.068 .17 .44 .58 .76 .89 1.0 1.3 1.5 1.7 1.9 2.5 3.5 4.6 6.0 1 7.1
.001 .01
.13 .25 .50 .75 1.0 2.0 3.0 4.0 5,0 10 25 50 100
1.6
1.7 1.9 2.0 2.1 2.3 2.4 2.5
= exp
-Ea
.5
1 (
m -=
1
)) 150
8.6 I7x1O
oiumn 1: Ea =.2 olumn 2:
Kp - (Power Dissipation)3g
Ea -.08
= Resistor Case Temperature. Can be approximate~ as ambient component temperature for low power dissipation non-power type resistors. IOTE: XT vaiues shown shdd only be used up to
the temperature rating of the device. For devices with ratings higher than 150C, use the equation to determine nT
9-2
Supersedes
page Section 90-9.17
of Revision F
-..
9.1 Power Stress Factor - nc Power Stress .1

.2 .3 .4 .5 .6 .7 .8
RESISTORS
Environment 2
Factor - n=
Column .79 .88 .99 1.1 1.2 1.4 1.5 1.7 1,9
Column .66
.81 1.0 1.2 1.5 1.0 2.3 2.8
Environment GB GF GM Ns Nu AC IF Uc UF
RW
1,0
4.0 16 12 42
18 23 31 43 63
.9 Column
3.4
1: xs s .71e1 1(S)
SF
.50 37
87 1720
MF Column 2: 7CS= .54e2W(s)
ML S = Actual Power Dissipation Rated Power CL
Quality Established Reliability Styles s R P M Non-Established Reliability Resistors (Most Two-Letter Styles)
ICQ
.03 0.1 0.3 1.0
3.0
Commercial or Unknown Screening Level
10
NOTE: Established reliability styles are failure rate graded (S, R, P, M) based on life testing defined in the applicable military device specification. This category usually applies only
to three-letter styles wilh an R suffix.
Supersedes
Section 9.0-9.17
of Revision
9-3
10.1
CAPACITORS
~p=~nTxcnvx~RfiQ~ EFailures/106
fiT
~C)iJfS
Table Use
nC Table Use
xv Table Use %R 1
;apacitor Style P
Spec. MIL-C25
Description
% .00037
Colurnm
1
Column:
1
Column:
1
Capacitor, Fixed, PaprDielectrk, Direct Current (Hermeti=l~ Sealed in Metal Cases) Capacitor, By-Pass, Radio Interferenm Reductbn, Paper Dieledrb, AC and DC (Hermetial~ sealed in Metallic
12889
.00037
Cases) 11693 Capacitor, Feed through, Radio

Interference Reduction AC and DC (Herm@W~ scald in metal cases), Established and blonestablished Reliabil~
.00037
n, CQR
19978
Capacitor, Fixed Plastic (or Paper-Pl=tk) Dielectric (Hermetial~ sealed in metal, oaramic or glass cases),
.00051
Estabkhd
Reliability
and NonestWishd .00037 1 1 1 1
x-i
18312
@pacitor,
(P~r, Film) Dielectrk% Direct Current

(1-iermetkal& Sealed in Metal
~Ked, Metallizd Papr Plastb or Plastb
Cases)
39022 Capacitor, Fixed, Metallizd Paper, Paper-Pi-tic Fdrn or Plastic Film Dielectric Capachor, Fixed, Plastic (or Metallized Plastic) Diokctrk, Dire@ Current in Non-Metal Cases Capacitor, Fixed Supermetdlud Plastic Film Dkdectrii (DC, AC or DC and AC) Hermetical& Sealed .00051 1 1
55514
.00051
83421
.00051
-i
in Metal Cases, Establish Reliability

CM 5 39001 C8 CY CYR 10950 11272 23269
Capacitom, Fixed, Mka Dielectric

Capacitor, Fixed, Mica Dielectric, Established Reliabilhy Capacitor, Fixed, Mica Dielectric, Button Style Capacitor, Fixed, Glass Dieiectr ic Capacitor, Fixed, Glass Dielectric, Established Reliability
.00076 .00076 .00076 .00076 .00076 i
2 2 2 2 2
1 1 1 1 1
2 2 2 2 2
1 1 1 1 1
10-1 Supersedes
I Ocv
Section
. I
10.1 -10.20
m .
I 1
of Revision
F
ml Iuw> 16
eal
>1
10.1
CAPACITORS 4 n~ Table nc Table Use Column: 1

1
Xv Table use Column: 3

3
Capacitor Style CK
CKR
Spec. MIL-C11015
39014
Description Capacitor, Fixed, Ceramic Dielectric (General Purpose)

Capacitor, Fixed, Ceramic Dielectrk (General Purpose), Establish Reliabiltiy CapaCitor, Fixed, Ceramic Dielectti (Tem~rature Compensating), Establish Relitil~ Nonestablishd
% .00099
.00099
Use Column: 2
2
%R 1
1
cC, CCR
20
.00099 and
55681
Capacitor, Chip, Muttipk Layer, FMed, Ceramk Dieled~c, Established Reiiabil~ Capacfior, Fixed, Electro~ic (Solid Electrolyte), Tantalum, Established Reliability Capacitor, Fixed, Electro~ic (Tantalum), Chip, Established Reliability Capackor, Fued, Electro~ic (Nonsoiti Electro~e), Tantalum Capackor, Fixed, Ek@ro~k (Nonmld ElectIo~e), Tantalu m, Establish Reliabil~ Capacfior, Fixed, Electro~ic (Nonsolid Ele@o~e), Tantal urn
.0020
CSR
39003
.00040
See %R Table
55365
.00005
See %R Table
r CL 3965 39006
.00040 .00040
1 1
2 2
4 4
1 , 1
83500
.00040
Cathode
cU, CUR 39018
Capacitor, Fixed, Ebctro~ic

(Aluminum Oxide), Established Reliabil~ and Nonestablish* Reliability
.000 12
I .000 12 2 2 1 1
L CE
62
Capacitor, Fixed Electrolytic (DC, Aluminum, Dry Ele@o~e, Polarized) Capacitor, Variable, Ceramic Dieied* (Trimmer) Capacitor, Variable (Piston Type, Tubular Trimmer) Capactior, Vati*le, (Trimmer) Ak Die Iectric
Cv L Pc CT (% *
81 14409 92 23183
.0079 .0060 .0000072 .0060
1 2 2 1
1 1 1 1
5 5 5 5
1 1 1 1
Capacitor, Fixed or Variable, Vacuum Dielectric
10-2 I .-
Supersedes
Section
10.1 -10.20
. . of Revlslon F
MIL-t-iDBK-217F NOTICE 2
10.1
CAPACITORS
Temperature T(%) 20 30 40 50 60 70 80 90 100 Column .91 1.1 1.3 1.6 1.8 2.2 2.5 2.8 3.2 3.7
4.1
Factor - XT 1 Column 2 .79 1.3 1.9 2.9 4.2 6.0 8.4 11 15

21 27
Capacitance Factor
Capacitance, c(~F) .000001 .00001 .0001 .001 .01 .05 .1 .5 1 3 8 18 40 200 1
=
- ~,
(
Column 1 .29 .35 .44 .54 .66 .76 .81 .94 1.0 1.1 1.2 1.3 1.4 1.6 1.9 2.1 2.3 2.5 2.7
Column 2 .04 .07 .12 .20 .35 .50 .59 .85 1.0 1.3 1.6 1.9 2.3 3.4 4.9 6.3 8.3 11 13
110
120
130
140 150
4.6 5.1
35 44
5.6 -Ea 1
56
1000 )) 3000 10000 30000
%T
= W ( 8.617
x10-5
( T + 273
Column 1: Ea = .15 Column 2: Ea = .35 T = Capacitor Atiient Temperature
60000 120000 Column 1: ~ Column 2: ~ = Cog = C-23
NOTE: 1. fiT values shown should only ~ used up to the temperature rating of the
device.
2,
For devices with ratings higher than

150C, use the equation to determine XT (for a~li~tions ahve 150C).
Supersedes I I I
Section 1-1 . .
10.1 -10.20 I
of Revision
r
F
Is-1
10-3
. . t3-
MIL-I+DBK-217F
NOTICE 2
10.1
CAPACITORS Voltage Stress Fac!or - x,
Voltage Stress 0.1

0,2 0.3 0.4
Column
Column 2
Column 3 1.0 1.0 1.1 1.3 1.6 2.0 2.6 3.4 4.4 5.6 *
Column 4 1.0 1.0
Column 5 1,0 1.1 1.2 1,5 2.0 2.7 3.7 5.1 6.8 F 9.0 4
1.0 1.0 1.0 1.1 1.4 2.0

3.2 5.2 8.6
1.0
1.0 1.0 1.0
1.0 1.0 1.0

2.0 15 130 990 5900
0.5 0.6 0.7 0.8 0.9 1 4
1.2
2.0 5.7 19
59 166
14
Column 1: 7CV =
()
~
~ 5+1 .6 s
Column 4:
Zv=
()
g () .5
~ .6
17+1
Column 2:
xv =
10+1
Column 5: 3+1 s=
%V =
3+1
() Column 3: xv=
() &
,6
Operating Voltage Rated Voltage
Note: Operating voltage is the sum of applied DC voltage and peak AC voltage.
Series Resistance Factor (Tantalum CSR Style CapacitorS Only) - XSR Circuit Resistance, CR (ohms/vott) >0.8 >0.6 to 0.8 >0.4 to 0.6
>0.2 to 0.4
%R
.66 1.0 1,3 2.0 2.7 3.3 <
>0.1 to 0.2
CR .
Eff. Res. Between

Voltage
Cap. and Pwr, Su~~ Applied to Capacitor
10-4
Supersedes
Section 10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
10.1
CAPACITORS
Quality Factor - XO
Quality Established o c S,B R P M L Non-Established Reliability Capacitors (Most Two-Letter Reliability Styles
7rQ
Environment Environment GB .001 .01 .03 .1 .3 1.0 1.5 GF GM Ns Nu AC IF Uc UF RW
Factor - KE fiE 1.0 10 20 7.0 15 12 15 25 30 40
Styles)
3.0
SF MF 20 50 570
.50
Commercial Level
or Unknown
Screening 10.
ML CL
NOTE: ~t~tis~reltiil~~l~amfa~re rate graded (D, C, S, etc.) based on life testing defined in the applicable military device specification. This category usually applies only to three-letter styles with an R suffix.
Supersedes
Section
10.1 -10.20
of Revision
10-5
MIL-HDBK-217F
NOTICE 2
10.2
Example
CAPACITORS,
EXAMPLE
Given:
A 400
VDC rated capacitor type CQ09A1KE153K3 is being used in a fixed ground environment, 50C component ambient temperature, and 200 VDC applied with 50 Vrms @ 60 Hz. The capacitor is being procured in full accordance with the applicable specification.
The letters CQW in the type designation indicate that the specification is MlL-C-l 9978 and that it is a NonEstablished Reliability quality level. The E in the designation corresponds to a 400 volt DC rating. The I 53 in the designation expresses the capacitance in picofarads. The first two digits are significant and the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
picofarads. (NOTE: Pioo = 10-12, ~ = 10-6)
Based orI the given information the following modei factors are cfetetmined from the tables shown in Section 10.1.
lb
XT
=
=
.00051
1.6
Use Table Equation (Note 15,000 pF = .015 PF) DC Volts
7CV
2.9
s=
Applied + fi (AC Volts Applied~ DC Rated Voltage
s=
200 + dz (50~ . .m 400
$
$
= ~ ~~c~v
=
%RXQ
= (.00051)(I.6)(.69)
(2.9) (1)(3 .O)(1O)
.049 Failures/l
06 Hours
10-6
Supersedes
Section
10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
11.1 sTYLE
TF
INDUCTIVE
DEVICES,
TRANSFORMERS
DESCRIPTION
Audio, Power and High Power Pulse
SPECIFICATION MIL-T-27 MIL-T-21038 MIL-T-55631
TP
Low Power Pulse Intermediate Frequewy
(IF), RF and Discriminator
)LP= ~~xTxQz~
Fai~Ures/l
06 Hours

Transformer Flyback (C 20 VOM) Audio (15 -2oK Hz) Low Power Pulse (Peak Pwr. c 300W, Avg. Pwr. < 5W)
Lb
Quality Factor - ~ r b QualitY lcQ
(F/106 hrs.)
.0054 .014 .022

i
MIL-SPEc
Lower I
1
3 1
Environment
Fader
- ZE fiE 1.0 6.0
High Power, High Power Pulse (Peak Power z 300W, Avg. Pwr.25W) RF (1OK- IOM Hz) .
I
.049
Environment . GB GF
.13
,
I
GM
Ns
Nu Alc
12
5.0 16 6.0 8.0 7.0 9.0 24 *A ,
Tempemtum Factor -XT I
30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

180
!: 1 .Z
1.4 1.6 1.8 1.9 2.2 2,4 2.6 2.8 -. 3.1 .-
I I
IF %c UF
I
1
t-Iv v
Am,
I . I
ML cL
.
.3U 13
34 610
3.3 3.5 3.8

4.
Ad
4.3
4.6 -.11 , 1
)){ (C), See Section
I_
190
XT =
exp ~W-29Et 8.617x I0
THS = Hot Spot Temperature 11.3. This prediction
model assumes that the
insulation rated temperature E not exceeded for

more than 50,0of the time.
11-1
Supersedes
11.1
INDUCTIVE
DEVICES,
TRANSFORMERS
Transformer Characterlstlc Determlnatlon Note MIL-T-27

TF
4
Example
R
Designation 01 GA
576
AIL-T-27
I
Grade
Irlsul&dkm
I
Famtiy
I
Syrflbd
~~
chS
Family Type Codes Are: Power Transformer 37 though 41 Audio Transformer: Pulse Transformer: and Filter: 01 through 09,
10 through 21, 50 through 53 22 through 36,54
MI L-T-21038 TP
MIL-T-21we
4
Example
Q
Designation
xl 1OoBcool
I
Gr*
I
h.suticxl
Cbs
MlL-T-5563I. The Transformers are Designated with the folbwing Types, Grades and Classes.
Type 1 Type II Type Ill Grade 1 Intermediate Frequency Transformer Radio Frequency Transformer Discriminator Transformer
Grade 2 Grade 3 Class O Class A Class B Class C
For Use When Immersionand Moisture Resistance Tests are Required For Use When Moisture Resistance Test is Required For Use in Sealed Assemblies 85C Maximum Operating Temperature I05C Maximum Operating Temperature 125C Maximum Operating Temperature > 125C Maximum Operating Temperature
The class denotes the maximum operating temperature (temperature rise plus maximum
ambient temperature)
11-2
-
Supersedes
page
11-2 of Revision F
z..__.
. _
=.____
. -=---.+--_-____>_
._ .
e-
~.
__. __
.. _
MIL-HDBK-217F
NOTICE 2
11.2 SPECIFICATION MIL-C-15305 MIL-C-83446 MIL-C-3901O STYLE
INDUCTIVE
DEVICES,
COILS
DESCRIPTION Fixed and Variable, RF Fixed and Variable, RF, Chip Molded, RF, Est. Rel.
Base Failure Rate - ~ + Inductor Type , ~ F/lo6 Ms.
Quality Factor - ~ Quality

s IIQ
Fixed Inductor or Choke

Variable Inductor
.000030
.000050
.03
.10
R P
.30
1.0
Temperature
Factor - XT
XT
TH@) 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190
MIL-SPEC .93 1.1 1.2 1.4

1,6 1.8
1.0 3.0
Lower
Environment Factor - XE Environment GB GF GM

Ns Nu *IC
~E 1.0 6.0
12 5.0 16 6.0
1.9
2.2 2.4 2.6 2.8 3.1 3.3 3.5 3.8
IF *UC *UF *RW sF MF

ML
))
8.0 7.0 9.0 24 .50

13 34 610
4.1 4.3 4.6

-.11
10 -5
XT = e)(p
8.617x
1 1 TH~ + 273 -=
CL
HS = Hot Spot Temperature (C),

See Section 11.3
Supersedes
F
L1
11-3
MIL-HDBK-217F
NOTICE 2
11.3
INDUCTIVE
DEVICES,
DETERMINATION
OF
HOT
SPOT
TEMPERATURE
l-lot Spot temperature can be estimated as follows:
THS=TA+
where: -$+s TA AT = = = Hot Spot Temperature Inductive (C) Device Ambient Operating
1.1 (Am
Temperature
(C)
Average Temperature
Rise Above Ambient (C)
Rise Test Method paragraph in the device base AT can either be determined by the appropriate Te~erature specification (e.g., paragraph 4.8.12 for MI L-T-27E), or by approximation using one of the procedures described below. For space environments a dedicated thermal anatysis should be performed. AT&p mximation (Non-spaoe Environments) Information Known . 1. MIL-C-3901 O Slash Sheet Number MIL-C-39010/l C-3C, 5C, 7C, 9A, lOA, 13, 14
AT Armoximation
AT= 15C AT= 35C
MIL-C-39010/4C, 6C, 8A, 11, 12 2. 3.

4.
Power Loss Case Radiating Surface Area Power Loss Transformer Weight Input Power Transformer Weight
(Assumes 800/0 Efficiency)
AT= 125 WL/A
AT= 11.5 wL/(wt.)6766 AT= 2.1 W~(Wta)06766
Power Loss (W) Radiating Surface Area of Case (in2). See below for MIL-T-27 Case Areas
A=
Wt. =
Transformer
Weight (W)
(lbS.)
w,
= Input Power
NOTE: Methods are listed in prefemd order (i.e., most to least accurate). MIL~-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating swface area.
MIL-T-27 Case Radiati nq Areas (Excludes Mounting Surface) Case AF AG Al-1 AJ EB EA

FB
Area (in2)
Case
Area (in2)
Case
4 7 11
18
GB GA H5
HA
33 43 42
53
LB LA MB
MA
Area @2) 82 98 98
115 117
21 23
25
JB JA
KB
58 71
72
NB NA
OA
139
146
FA
31
KA
84
17-4 #,.
Supersedes
pages 11-4 and 11-5 of Rev[sion F
12.1
ROTATING
DEVICES,
MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to pcdyphase, capacitor start and run and shaded pole motors. hs application may be extended to other types of fractional horsepower motors utilizing rolling element grease packed bearings. The model is dictated by two failure modes, bearing failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor applications. The mode! is based on References 4 and 37, which contain a more comprehensive treatment of motor life The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds prediction methods. rpm or motor loads include motor speed slip of greater than 25 percent. exceed 24,000 The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The over time wrid T. This time period is failure rate model in this section is an average failure rate for the motor op-ting either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or replacement). The model assumes that motors are replaced upon faifure and that an effective constan! failure rate is achieved after a given time due to the fact that the effective ~ime zero- of replaced motors becomes random after a , can be treated as a constant failure rate and significant portion of the population is replaced. The average faikuO rate,
added to other part failure rates from this Handbook.
x,
Lz
+
l.p=
[
A(xB
BaW
x 106 Failures/l 08 I-iours 1
Bearing & Winding Characteristic Life - c%Rand aw .-
A (c)
o
(Hr.)
(Hr.)
TA (=) 70 80 90 100 110 120 130 140
aB (Hr.) 22000 14000 9100 6100 4200 2900 2100 1500
(Hr.)
E 30 40 50 60
3600 13000 39000 78000 55000 35000
6.49+06 3.2e+06 1.W+06 8.9e+05 5.oe+05 2.9e+05 1.8e+05
1.1Q+05 7.09+04 4*6e+04 3.le+04 2.19+04 1.5e+04 1.09+04 7.5e+03
2.534aB [ 2357 ,0 [ TA + 273 %/ aB w TA = = 10 (
TA2~:73 )
1 4500 10 ( 20-~ ) +300
1
-1
1.83]
Weibull Characteristic Life for the Motor Bearing Weibull Characteristic Life for the Motor Windings Ambient Temperature (C)
NOTE:
See page 12-3 for method to cakulate aB and ~
when temperature is not @nstant.
Supersedes
. __ __ ______ __

-.____
12-1
..-_ _
12.1
ROTATING
DEVICES,
MOTORS
A and B Determinatbn
L and L .. 1 -- c Determination 1 B 1.1

.29 1.7 5.4
Motor Type Electrical (General)
A 1.9
.48 2.4 11
Lcw&
aB 0-.10
aw
k,
or Q
Sensor
Servo Stepper
.13 .15 .23 .31 .41 .51 .61 .68 .76 1.0
.11 -.20 .21 -.30
Example Calculathn A general purpose elecltial motor is operati~ at 50C in a system with a 10 year desgn life (876W hours) expedancy,
.31 -.40 .41 -.50 .51 -.60 .61 -.70 ,71-.80
55000 Hrs. 2,9e + 5 Hrs.

87600
~fS. =
.81 -.90
1 .e
55000
87600
I+rs.
I-trs.
>1.0 .3
2.9e + 5 Hrs. =
LC is the system design Me cycle (in hours), or the motor preventive rnaintename intewal, if
motom will be periodidly replaced or
1.0
(
for
L& . aB
1.6 ) .3 )
refutished.
Determine kl and ~ separately LC am ratios. LC based on the respedive UB aw
.23 ( 1.9 1.1
f.rg= aw
%=
[*+
.23 (1. V(2.9e
+ 5)
x0
10.3 Failures/l 06 Hours
~9.9 ILL
Supersedes
MIL-1-iDBK-217F NOTICE 2
12.1 Calculation
for Cycled Temperature
ROTATING
DEVICES,
MOTORS
The following equation can be used to calculate a weighted characteristic life for both bearings and windings
(e.g., for bearings substitute aB for all as in equation). h1+h2+h3+------hm

a=
hl
hz
+ al
where: a h, h* h3 hm al either ~ or aw
+ a2
h3 +------- a3
h~ a
m
Time at le~erature
T1 T, to T3
Time to Cycle From Temperature Time at Temperature mme at Temperature Bearing (or Winding) Bearing (or Whaling) T, + T3 T~=2$T4=2 T3 Tm Liie at T1 Life at T2
T3 + T,
T3
T2
TI
. -f
h4
hl
II
1
hz
I
h3
Hours Thermal
(h) Cycle
Supersedes
page 12-3 of Notice
12-3
12.2
ROTATING
DEVICES,
SYNCHROS
AND
RESOLVERS
DESCRIPTION Rotating Synchros and Resolvers

kp = &S~NXE
Failures/l
06 Hours
NOT E:
Synchros and resolvers are predomiwtely used in service requiting only slow and infrequent motion. Mechan~al wearoti problems are infrequeti so that the electrical failure mode dominates, and no mechankal mode failure rate is required in the model above. Number of Brushes Factor - ~ Number of Brushes = ~
%N 1.4
2.5 3.2
30 35
40
45 50 55 60 65
.0083 .0088 .0095

.010 .011 .013 .014 .016
70 75 80
.019 .022 .027
85 90 95 100 105 110 115 120 125 130 ~
.032 .041 .052 .069 .094 .13 .19 .29 .45 .74 ,1.3
52
3 4
Factor - ZE fiE
r
A
GB
%
TF
1.0
2.0
12 7.0 18 4.0 6.0 16 25 26
.oo535expf-)8
Frame Ternpwatum (z)
I
GF
%
N~ N AC IF
If Frame Temperature is Unknown Assume

TF=40C + Atiieti Tempenture
*UC
Size Factor - x~
w
UF
1
RW SF
DEVICE TYPE Synchro Resolver \
Size 8 or smaller 2 3
Size 10-16
Size 18 or Larger 1
.50
14
MF
1.5 2.25 ML 1.5
36 680
I
CL
12-4
Supersedes
page 12-4 of Notice 1
//-
.>.
\NaaA\
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION Elapsed Time Meters
kp =&p~Fai
lures/106
Hours
Base Failure Rate - ~ Type A.C. Invefier Driven Commutator D.C. I Lb 20 30 80
Environment Factor - xc Environment GB GF % Ns Nu
L
~E 1.0 2.0 12 7.0 18 5.0 8.0 16 25 26 .50 14 38 N/A
Temperature Stress Factor - XT Operating T (C)/Rated T (~) o to .5 .6 .8 1.0 [ XT .5 .6 .8 1.0
*IC IF Uc UF RW SF MF ML CL
Supersedes
12-5
MIL-HDBK-217F NOTICE 2 13.1 RELAYS, MECHANICAL
SPECIFICATION M\L-R-5757 MIL-R-6106 MIL-R-13718 MIL-R-19646 MIL-R-19523 MIL-R-390~6
DESCRIPTION Mechanical Relay MIL-R-83516 MIL-R-83520 ML-R-83536 MIL-R-83725 MIL-R-83726 (Except Class C, Solti State Type) Failures/l a. Ob Hours Load Stress Factor - XL ~- -I T.-A 1
{
)bP=
&Lncxc&xQn
1
T. (%)
n
Base Failure Rate - ~ Rat# Tempentt I~a 1 . I 125$ I 0s% :&9

.0067 .0075 .0064 .0094 .010 .012 .013 .014 .016
:6 .005= .0066 .0073 .0081 .0089 .0098 .011 .012 .013 .014 .015 .017 .018 .019 iii .022 .024 .026 .027 .029 .031
25
30 35 40 45 50 55 60 65 70
l=-.U3
.10
.20 .30 .40 .50 .60 .70 .80 .90 ~ 1. y--
R*06.
1
I
1
1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77 S2 -j
1.28 1.76 2.72 4.77 9.49 21.4
2,72 9.49 54.6
75
80 65 90 95 100 105
.017
.019 .021
3.
~.exp ()
S2 ~
()
110
115 120 125 -.19 % -.0059 exp ( 8.617
X 10-5
! 1 )
For single dev-s wtkh switchtwo different load typs, evaluate q-for each possible str-s bad tyPS combinatmnand use the worse casO (largest XL).
~-zm1)
1 1 . 1 298 q , ,I
CydiMI Fader- ~yc

c@e Rate (@cbS per Hour) 21.0 <1.0
Cycle
? %Yc
2 %
-.0059 exp
-.17 8.617
X
10-5 [ T + 273
L
/ r
(MIL-SPEC) 10 0.1 CYC
~A
~bant
Tempmture VC)
Rate
Contad Fom Factor - nc

* 1
(C@es per Hour) >1OOO 10-1000 <10 NOTEA I 100 Cycles per Hour 10 1.0
(Applies to Active Concluding Conta~s) c mntact Form s?S1 DPST sPOT 3PST 4PST DPDT
3PDT 4PDT 6PDT 1.00
q
I .au 1.75
cn
2.00
2.50
3,00 425 550 800 1
Values of nCYC for cycling rates beyond the
n
I
basic design hmttations of the relay are not valld Deslg specdicatlons should be consulted prior to evaluation of CYC
-H
ITHSISIUI
13-1
page -U.l 1 13-1
Supersedes
nnll
of Revision
WI
F
. rlxuu. uulllwalLlwIl 10 IISZUIOUWUJ,
w-l!W1-. -y-------------.
13.1
RELAYS,
MECHANICAL Application and Constfuction Factor - fiF 1

7tQ
Quality Factor - n, Quality

R P Contact
.10
Rating ~
lrrent 3Wmv Idma)
Application Type D~ Circuit
Construction Type (Long)
Armature
Dry Reed
Mercury
.30 .45 .60 1.0 1.5 1.5 2.9
Wetted
x u M L MIL-SPEC, Non-Est. Rel. @mmercial
General
Pum09e
b Sensitive (0-lCN)mw)
Magnetic Latching Balanc6d Armature Solenoid Armature (LoW) Balanced Armature Solenoid Armature (Long and
short) Mercury Wetted

Magnetic Latching Meter Movement Balancd Armature Armature (ShOti)
Polarized
Environment Factor - xc L
\
I
T I
1
2 6 100 10 10
100
1
Environment GB
fiE 1.0 2.0 15 8.0 27 7.0 9.0 11 12 46 .50 25 66 N/A

I
25
GF
% Ns Nu AC IF %c UF RW SF MF ML c,
M
Electronic Ilrne Dew, ~ *-Thermal
.atch ing, Magnetic 5-20 Amp High Voltage ~ Power
w Reed
Wetted Balan@ armature Vacuum (Glass) Vacuum (Ceramk) Armature (Longand
Mikwy
10
5
5 20 5
3
: 3 2 2 7 12 10 5
short)
Mercury Wetted Magnetic Latching Mechan~1 Latching BalaArmature Solenoid Armature (Short) Mechanlcd Latching Baian@d Armature Solenoid
25-600
Contractors (High Current)
13-2
Supersedes
page
13-2
of Revision
fvllL-HDBK-21
NOTICE 2
7F
13.2 SPECIFICATION MIL-R-28750 MIL-R-83726
RELAYS,
SOLiD
STATE
AND
TIME DELAY
DESCRIPTION Relay, Solid State Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum the failure rates for the individual components which make up the relay. The indvidual component failure rates can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or from the Pafls Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has about the components being used. If insufficient information is available, the following default model can be used: ~ = ~z@E Failures/106 liours
Base Failure Rate - ~ 1 Relay Type Solid State Solid State Time Delay Hybrid
Environment Factor - XE Lb
1
Environment GB GF
fiE 1.0 3.0 12 6.0 17 12 19 21 32 23 .40 12 33 590
.029 .029 .029
GM Ns N Alc
Quality Factor - z~
IF
7CQ 1
Quality MIL-SPEC Commemial
%c UF RW SF MF ML cL
1.0 1.9
Supwsedw
page 13-3 of RwIsm
13-3
14.~
SWITCHES
Base Failure Rate - ~ 1 Spec. ~ (F/106 tirs.) MIL-SDescription

Centrifugal Dual-In-line Package Limit N/A 83504 8805 3.4 .00012 4.3 2.3 1.7 2,8
Stress s 0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Load Stress Factor - XL Load Type Inductive Resistive 1.02 1.00 1.06 1.02
1,06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77 1.28 1.76 2,72 4.77 9.49 21.4
Lamp 1.06
1.28 2.72 9,49 54.6
Liquid Level Microwave (waveguide) pressure
pushbutton
II
N/A
Iced
locker iotafy
Sensitive
Thermal
Thurnbwhed
Toggle
I
4
Supersedes
8932 9395 1211 8805 I 22885 24317 55433 3950 22885 3786 13623 15291 15743 22604 22710 45885 82359 8805 13484 22614 12285 24286 22710 3950 5594 8805 8834 9419 13735 . 81551 83731
.10
.0010 .023 .11
s=
Operating Load Current Rated Resistive Load Current exp (S/.8)2
XL
for Resistive Load for Inductive Load for tirnp Load
fiL fiL
= =
exp (s94)2 exp (S/.2)2
NOTE: When the switch is rated by indutiive load, then use resistive nL. Conta@ Configuration Factor* - Zc # of Contactst NC Contact Form 1 SPST 2 DPST 2 sPOT 3 3PST 4 4PST 4 DPDT 6 3PDT 8 4PDT 12 6PDT
.49
.031 .18 .10
xc 1.0 1.3 1.3 1.4 1.6 1.6 1.8 2.0 2.3
I
4
Applies to toggle and pushbutton switches only, all others use fic = ~.
74-1 page 14-1 through 14-4 of Revision F
14.1
SWITCHES
Environment
~Q I
Quality Factor - Kn .
Factor - n~
~E
I
Quality MIL-SPEC Lower
Environment
GB J GF GM NS Nu *C IF Uc
UF RW SF MF ML CL
1.0 3.0 18 8.0 29 10 18 13

22 46 .50 25 67 1200
14-2
Supersedes
page 14-1 through
14-4
of Revision
14.2
SWITCHES,
CIRCUIT
BREAKERS
SPECIFICATION MIL-C-13516 MIL-C-55629 MIL-C-83383 MIL-C-39019 W-C-375
DESCRIPTION Circuit Breakers, Circuit Breakers, Circuit Breakers, Circuit Breakers, Circuit Breakers,
Manual and Automatic Magnetic, Unsealed, Trip-Free Remote Control, Thermal, Trip-Free Magnetic, Low Power, Sealed, Trip-Free Service Molded Case, Branch Circuit and Sewice
kp = &cXuZQnE Base Failure Rate - k Description Magnetic Thermal Thermal-Magnetic
Failures/l
06 Hours oualitv Factor - ~n
%3
.34 .34 .34
7CQ
1.0 8.4
Environment Factor - xc IE Configuration Factor - m Configuration SPST DPST 3PST 4PST 1.0 2.0 3.0
4.0
nvironment GB GF
1.0
2.0 15 8.0 27 7.0 9.0 11 12 46 .50 25 66 NtA
GM
Ns Nu
AC IF %c
Use Factor - z Use Not Used as a Power On/Off Switch Aiso Used as a Power On/Off Switch 1.0 ,
UF RW SF MF 2.5 ML CL
Supersedes
14-3
15.1 LP = kbnTnKnQnEFailures/lo6 ours
CONNECTORS,
GENERAL
APPLICATION NOTE: The failure rate model is for a mated pair of conneCtom. It is sometimes desirable to assign half of the overall mated pair connedor (i.e., single corm-or) failure rate to the Ime replaceable unit and An example of when this would be beneficial is for input to maintainability half to the chassis (or backplane). prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This accounti~ procedure could be signiftint if repair times for the two halves of the connector are substantially different. For a single connector divide ~ by tWO.
I
Description ;ircular/Cylititil
~ification MIL-C26482 115 27599 i500 29600 1840 83723 )999

1511
-$) (v
20 .91 1.1
1.3
.0010
30 40 50 60 70
1.5 1.8 2.0 2.3 2.7 3.0 3.4 3.7 4.1 4.6 5.0 5.5 6.0 6.5 7.0 7.5 8.1 8.6 9.2 9.8 I
-.14
ard Edge (PCB)*
21097 55302 24055 24056 24308 28731 28748 83515 21617 24308 28748 28804 81659 83513 8352? 83733 85028 S607 36X3 S650 3655 15370 25516 26637 39012 55235 83517 55074 22992
49142
.040
80 90 100 110 120 130

140
exagonal ack and Panel
.15
.021
150 .046 160 170 180 190 200 210 220 .00041 230 240 250 r
Rectangular
3F Coaxial
10.
XT
sexp
Telephone Power
Trlaxial
.0075 .0070 .0036
1 8.617
X 10-5
1
+
To
273
. 1 298
)1
To = Connector Ambient + AT
AT = Connector Insert Temperature (see Table) Rise
Pr~nted Circuit Board Connector 15-1 Supersedes

a.. . . . . . .. ____
page
15-1
through
15-5
of Revision
F . ... .. .
. a ___
_______ . .
~er Contact 2 3 4 5 6 7 8 9 10 15 20 25 30 35 40
Default Insert Temperature Rise lAT C) Determination , Contact Gauge Amperes L
Mating/Unmating
Factor - nK
~K
30 10 22 37 56 79
Mating/Unmating Cycles* (per 1000 hours) 12 0 1 1 2 3 4 5 6 7 15 26 39 54 72 92
22 4 8 13 19 27 36 46 57 70
20 2 5 8 13 18 23 30 37 45 96
16 1 2 4 5 8 10 13 16 19 41 70 106
o to .05 > .05to .5

>.5t05 >5t050
1.0
1.5 2.0 3.0
> 50
q One cycle includes both connect and
disconnect.
Quality Factor - XQ
I
Lower
Quality MIL-SPEC
I
1
I
2
AT AT AT AT AT AT AT AT AT
= = = = = = = = =
3.256(i) 85 2.856(i) 85 85 2.286(i) q 1.345(i)l 85 0.989(i) q 85 0.640(i) 85 0.429(i) 85 0.274(i) 85

0.100 (i) 85 Insert Temperature
32 Gauge 30 Gauge 28 Gauge 24 Gauge 22 Gauge 20 Gauge 18 Gauge 16 Gauge
Contacts Contacts Contacts Contacts Contacts Contacts Contacts Contacts
Environment Factor - XE Environment GB GF GM ~E 1.0 1.0
12 Gauge Contacts Rise

4
8.0 5.0 13 3.0

5.0 8.0 12 19 .50 10
AT =
i =
Ns Nu Alc
IF
Amperes per Contact
RF Coaxial Connectors
AT = 5C AT= 50C
RF Coaxial Connectors (High Power Applications)
Uc UF RW SF MF
ML
27 490
c,
15-2
Supersedes
page 15-2 through
15-5 of Revision
15.2
CONNECTORS,
SOCKETS
Lp = ++CP7CQ7CEFailures/l
06 Hours
Base Failure Rate - ~ Description Dual-In-Line Package Single-In-Line Package Chip Camier Pin Grid Array Relay
Transistor Electron Tube, CRT
Active Pins Factor - np Lb .00064 .00064 .00064 .00064 .037

.0051 Number of Active Contacts 1 2 3 4 5 6 7 8 9 10 11 12 13
14 15
~Q
Spec. httlL-S 83734 83734 38533 NIA 12883

12883
Number of
Act ive
Contacts
7tp
6.9 7.4 7.9
1.0
1.5 1.7
12883
.011
Quality Factor - ~ Quality MIL-SPEC. Lower
.3 1.0
Environment Factor - ~E Environment GB GF % Ns Nu AC IF *UC *UF

*RW
fiE 1.0 3.0 14 6.0 18 8.0 12 11 13

25
16 17 18 19 20 25 30 35 40 45 50
H 2.1 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 4.1 4.5 5.0 5.5 5.9 6.4
55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 13.5 140 ;$ 155 160 165 170 175 180
8.4 8.9 9.4 9.9
10 11
12 12 13 13 14 14 15 16 16
17 18 18 19 20 20 21 22
Number of Active Pins
An active contact is the conductive element which mates with another element for the purpose of transferring electrical energy.
SF MF ML c, Supersedes
I
.50 14 36 650 page 15-6 of Revision F

I I l.I ---1
15-3
I
16.1 Ap =kb
INTERCONNECTION Nptc+N2(~c+
ASSEMBLIES
WITH
PLATED
Hours
THROUGH
HOLES
13)
7tQnEFaillJre@
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the plated through holes and assumes failures are predominately defect related. For beads using surface mount technology, use Section ~6.2 For a mix of leaded devices mounted into plated through holes and surface
mount devices, use this model for the leaded devices and use Section 16.2 for the surface mount contribution.
A discrete wiring assembly with electroless deposit plated through holes is basidly a pattern of insulated wires The primary cause of failure for both printed wiring and discrete laid down on an adhesive coated substrate. wiring assemblies is associated with plated through-hole (PTH) problems (e.g., barrel crackng). Quality Factor - ~
Base Failure Rate - ~ Technology Printed Wiring Assemb!yFtinted Circuit Boards with PTHs kb .000017
Quality MIL-SPEC or Comparable Institutefor Interconnecting, and Packaging Electronic Circuits (lPC) Standads (IPC Level 3) Lower
ltQ
Discrete Wiring with Electroless A Deposited PTH (< 2 Levels of Circuit@ Nu~r
.00011
of PIWs Factor - N1 and N2

Quantity
Factor I N,
I
Automated Techniques: Quantity of Wave Infrared (IR) or Vapor Phase Soldered Functional PTlis Quantity of Hand Soldered PTHs Complex~ Factor - ~ I
Envimnmti Environment GB
Factor -xc
b 1
~E 1.0
N2
I
L I
GF GM
2.0 7.0 5.0 13
Number of Circuit Planes, P S2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
xc 1.0
&s
Nu
1.3 1.6 1.8 2.0 2.2 2.4 2.6 2.8 2.9 3.1 3.3 3.4 3.6 3.7 3.9 4.0 1
%c
5.0
IF %c UF
8.0 16 28 19 .50 10 27 500
%w
SF MF ML cL .
Discrete Wwng w/PTH

xc =
.65 63 P
Ifj-1
Supersedes -.
--1I
page
16-1
of Revision
F ,
... ~. .
Jr--
-----------
MIL-I+DBK-217F NOTICE 2
16.2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY
APPLICATION NOTE: The SMT Model was ctevelopecf to assess the life integfiiy of leadless and leaded devices. It provides a relative measure of circuit card wearout due to thermal cycling fatgue failure of the weakest link- SMT device. An analysis shouti be periorrned on all circuit board SMT components. The component with the largest failure rate value (weakest link) is assessed as the overall board failure rate due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and the results do not consider solder or lead marwfacturi~ defects. This model is based on the techniques developed in Reference 37.
ASMT
Average failure rate over the expected equipment life cycle due to surface mount device This failure rate wearout. contrbutbn to the system is for the Surface Mount Device on each board exhibiting the highest absolute value of the strain range:
where: CR
Temperature cycling rate in cycles per calendar hour. Base on a thermal analysis of the circuit board. Use table default values if other estimates do not exist. Average number of thermal cycies to failure
Nf
I ( % AT -ucc(dT+TRIsE)) ECF )LSMT = ~ ECF =
lx 10-6
Nf=
3.5 &
, (1
(as AT- Cfcc(AT+TRIsE))
Ix 10 +)-qn,c)
Effective cumulative number of the Weibull failures over ctwacte~ic life.

-..._._,.
where: d=
Ffi*iVGI ~llmldat~~ k.....- _

Lc
ral~ ~r~~- FCF u w-------ECF .13 .15 .23 .31 .41 .51 .61 .68 .76 1.0 h=
Distance from center of device to the furthest solder joint in miis (thousandths of an inch) Solder joint height in miis for Ieadiess devices. Default to h = 8 for ali leaded configurations. Circuit board substrate thermai coefficient of expansion (TCE)
-MT 0-.1 .11 -.20 .21 -.30 .31 -.40 .41 -.50 .51 -.60 ,61-.70 .71 -.80 .81 -.90 > .9 LC =
w= AT =
Use environment temperature extreme difference material thermal Package coefficientof expansion (TCE) Temperature rise due to power dissipation (Pal) =
= eJcp
w%=
TRISE =
Design iife cycle of the equipment in which the circuit board is operating
Pd
8JC
USMT = The Weibull characteristic life.

USMT is a function of device and substrate material, the manufacturing methods, and the application environment used.
~Lc =
P=
Thermal resistance /Watt Power Dissipation (Watts)
Lead configuration factor
16-2
New Page
MIL-HDBK-217F NOTIGE 2
16.2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY as - Default TCE Substrate Values as 18 20 11 7 5 K

d
CR - Cycling Rate Defau~ Values Number Of Equipme~ TYPe Cycles/Hour l~omotive

:onsumer (television, radio, recorder) computer Telecorn~~~t~ns Commercial Alrcrati INustrial MilfiarY Gwti Appl=tbm Miliia~ Aircraft (Caf90) Miliiafy Ahcnti (FigMer)
Substrate Material FR4 Laminate FR-4 Multilayer 60ard FR-4 Multilayer Board w/Copper [ Clad Invar I ?ramicMuttilayer Bead ~pper Clad Invar Copper Clad Mol@@mm Cafbon-Fibr/EpOW Kevlar Fiber @artz Fiber Glass Fiber Epoxy/Glass Laminate Polyamtie/Glass Polyam~/Kevlar . Laminate Laminate Corw@e I
1.0
.08 .17 .0042 .25 .021 .03 .12 .5
1
3 1 5 15 13 6 8 7 7 7 6 9 20 7 1
XLC - Lead Configuration Factor Lead Configuratbn LeadlesS J or S Lead Gull WIW %C 1 150 5,000
Po&amtie/Wa~ LamiMte @oxy/Kevkr Laminate Alumina (Ceramk) @mxy Ararnkf Fiber PolyamM Aramti Fitwr Epoxy-Quafiz Fiberglass Tefbn Laminates var Porcelainked Copper Clad In 1 Fiberglass Ceramk Fibw
c - TCE Package Values , , Plastic Ceramic 7 6
AT -Use Envimnmeti Default

v Te~erature Environment GB GF GM hJs Nu Difference AT 7 21 26 26 61 31 ~ 31 57 57 31 7 N/A NIA hJIA
%c
AIF %c UF %lw Sc MF ML CL
A large plastic encapsulated E)cAMPLE: Ieadless chip canier is mounted on a epoxyglass printed Wiring assetily. The $esign ~ns~erations are: a square pa*age is 1480 roils on a side, solder height is 5 roils, power dissipation is .5 watts, thermal resistance is 20 C/wati, the design life is 20 years and envkOnmti is military grouti application. The failure rate cfevebped is the impad of SMT for a single circuit board and accounts for all SMT devices on this board. This failure rate is added to the sum of all of the component failure rates on the circuti board.
(xsMT
cfi
16-3
Nf
New Page
16.2
INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY
d ~f = 35 (. R I
(asAT-ucc(A~+TRlsE)) I 0 -6)-226@Lc)
For d: For h: For as:
d = ~ (1480) = 740 roils

h s 5 roils
as = 15 (Table - EPOXY Glass) AT_ 21 (Table - GF) ~. 7 (Table - PlastiC)
ForAT:
For WC: For TRISE: For XLC:
For CR:
TRISE = eJC p = 20(.5) = 10C ZLC = 1 (Table - Leadless) CR = .03 cycle~our (Table - Milita~ Gmun@ - 7W+1O)) 1) 104 x 226 (1)
Nf
=
=
35
(1
740 (.65)(5)
(W2V
Nf
18,893 theml
cycles to failure
WMT
629,767 hOu~ 18,893 cycles .03 cyiedbur =
1-c
aSMT
W=
*
28
ECF ~SMT
= =
.23 failures (TaMe - Effedive Cumulative Failures) ECF ~T .23 faiiures .0000004 failure~~ur = 629,767 kNJrS =
XSMT = ,
.4 failures/106 hours
New Page 16-4
MIL-HDBK-217F
NOTICE 2
17.1 CONNECTIONS
Use the Intermnnedion Assembly APPLICATION NOTE: The failure rate model in this section applies to connedions used on all assemblies except those using plated through holes or surface mount technology. connections to a circuit board using either plated through hole technology Model in Sectbn 16 to account for The failure rate of the strudure which supports Soldefless wrap connections e.g., the connedions and parts, are or surface mount technology. non-plated-through hole boards and terminal straps, is considered to be zero. chara~erized by SOIMwire wrapped under tenshn followinga rrmdelwhereas single soldeting with wrapping does post, is for a hati connedion. The around not depend on a tension induced connedion. L = LX= Ub
Failures/l
06 Hours Envimnmnt Factor-Xc
&
Base Faihm Rate - ~ Connedion Type ~ (F/106 hm) .0013 .000070 .00026 .000015 .0000068 .00012 .000069 .17 .062
Environment
I
~E .-
GB GF GM .. . Ns
u
Hand Solder, w/o Wrapping

Hand Solder, w/Wrapping crimp
1A I
2.0 7.0 4.0 4.0 6.0
6.0 8.0
16
1 .U
Weld Soldeffess Wrap Clip Termin~bn Reflow Solder Spfing Contad Terminal Block
AC
IF
AN UF
RW SF
.50 9.0 24 420
MF ML CL
17-1
Supersedes
MIL-I-IDBK-217F
APPENDIX
A:
PARTS
COUNT
RELIABILITY
PREDICTION
Parts Count Reliablllty Predlctlon - This prediction method is applicable during bid proposal and early design phases when insufficient information is available to use the part stress analysis models shown in the main body of this Handbook. The information needed to apply the method is (1) generic part types (including complexity for microcircuits) and quantities, (2) part quality levels, and (3) equipment environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the following tables, multiplying it by a quality factor, and then summing it with failure rates obtained for other components in the equipment. The general mathematical expression for equipment failure rate with this met hod is: i=n
EQUIP =
i=l
@g@i
Equation 1
for a given equipment environment where: Total equipment failure rate (Failures/1 06 Hours)
~EQulP
9
7tQ
=
=
Generic failure rate for the i h generic part (Failures/1 06 Hours) Quality factor for the i h generic part Quantity of i h generic part Number of different generic part categories in the equipment
Ni n
= =
Equation 1 applies if the entire equipment is being used in one environment. If the equipment comprises several units operating In different environments (such as avionics systems with units in airborne inhab~ed (Al) and uninhabited (AU) environments), tmn Equat~n 1 shou~ ~ aPPlied to the potiions of the equipment in each environment. These environment-equipment failure rates should be added to determine total equipment failure rate. Environmental symbols are defined in Section 3. The quaMy factors to be used with each part type are shown with the applicable ~ tables and are not necessarily the same values that are used in the Part Stress Analysis. Mcrocircuitshave an additional rnuttip~ing factor, ~L, which aOCOuntsfor the matudty of the manUfaCt@ng process. For devices in productiontwo years or more, no modifmtbn Is needed. For those in production less than two years, h should be multipliedby the appropriate XL faotor (See page A-4). It shouldbe noted that no generic failure rates are shown for hybrid microcimuits. Each hybrid is a fairly unique device. Since none of these devices have been standardized, their complexity cannot be determined from their name or function. Identically or similarfy named hybrids can have a wide range of complexitythat thwarts categorization for pufposes of this prediction method. If hybrids are anticipated for a design, their use and construction should be thoroughly investigated on an individual basis with application of the prediction model in Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the failure rate models of Section 5 through 23. The specific defautt values used for the model parameters are shown with the kg Tables for microcircuits. Defautt parameters for all other part classes are summarized in
the tables stafling on Page A-12. For parts with characteristics which differ significantly fmm the assumed defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can be used.
A-1
MIL-HDBK-217F
NOTICE 2
APPENDIX
A:
PARTS
COUNT
i Nmm I 1 i 1
..mtw
r-.-04 II
-wow . .-mri
OJ
re-mo .
0--=
In
c
9 .
ZS8
1%
in
In
Lr
IA?
A-2
.
Supersedes
page A-20f
Notice 1
MIL-HDBK-217F NOTICE 2 APPENDIX A: PARTS COUNT
FF)mo
-.-N .,. .
-mmo
9-..04 .,. .
mmmm
.efwm . . . .
Cwlo .P.r) . .
Qo
. .
QNN *W*SJ
000.
0000
or-mm
.-mm . . .
to -Nsrl 0000
0000
o--m
-Wol r-mm% 000.
Omoe
.Pmm . . . .
Inulo)c *WOO Oooc
mmea m@@o Oooc
mcwea -NNC
000<
CVWF)N Cwmlou)
0000
of-Qe F-WU Oooc
u
n
N
Lo
N Lc
I
A-3
Supersedes
page A-3 of Notice 1
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
c?
e-i
0
Ii
9 -GJR9416
OQ!QCNO
w-
u) 0
W
64
N
>
A-4
:
I
A-5 Supersedes page A-5 of Notice 1

----
MIL-HDBK-217F
NOTICE 1
APPENDIX
A:
PARTS
COUNT I >
9
n
?4
I
o m
z! m 0 o
N
, ,
rU) 0 0
. r
c
c
in
r)
w m.
t
4
0< m
$ 8
0 o
Iii
o i
i
u
c
c <
c *
3=
0
r+
m
0
e 0,
rOA 0.
l-Fl-
II
2!
Ill
2!
?!
persedes
eviSIO!l
MIL-HDBK-217F NOTICE 2 APPENDIX

I 1
c r
Ln
I
A:
0
PARTS COUNT 1
8
( 1
< ,
-. -mm
Supersedes

1 I
A-7
I
MIL-HDBK-217F NOTICE 2 APPENDIX r A: PARTS COUNT
I
U7
o m
1g
8 m
Q e+
g)
s o
!!M. .
mf
9,
?-
.*-S . .
-w
Ji w
L
A-8
Supersedes
page A-80f
Nottce 1
MIL-HDBK-217F NOTICE 2 APPENDIX

. . . . .
A:
PARTS
COUNT
f-ul-rQti
q.-
o~elyo -CM-N.
. i .
1
i?
(i G
-----------
.(-UCU -----
---mmmmr)mm ----
----
U-imbf)inmbnlr)m -------
-----
- -
Supersedes
page A-90f
Revision
A-9
APPENDIX . A:
r
PARTS
.
0 *
. m
m=
A-IO
11 1
r r
Supersedes
APPENDIX A: PARTS COUNT
Supersedes
.. .. -.
page
A-1 1 of Notice 1
A-II
APPENDIX A: PARTS COUNT 4
0 . ~
I
I
u
II
0000. . . .
.--a
00 . .
. .
rb.
0
----
0.
0.
0.0.
--
0.
0.
0.
T-
VIA -- -u tt{ LLI.L
330
u
0 m
A-12
Supersedes
page A-120f
Notice I
Supersedes
page A-1 3 of Rewsion F
A-13
APPENDIX
C:
BIBL1OGRAPHY
26. 27. 28.
VHSIC Impact on System Reliability, RADC-TR-88-1 3, AD B122629. Reliability Assessment of Surface Mount Technology, Reliability
A200529. This study developed new failure rate prediction models for GaAs Power FETS, Transient Suppressor Diodes, infrared LEDs, Diode Array Displays and Current Regulator Diodes.
RADC-TR-88-72, Devices,
AD A193759. RADC-TR-88-97, AD
Prediction
Models
for Discrete
Semiconductor
29.
Impact
of Fiber
Optics
on System
Reliability
and Maintainability,
RADC-TR-88-124,
AD
A201946. 30.
Vl+SIC/Vl-tSIC Like Reliability Prediction Modeling, RADC-TR-89-1 71, AD AZ 4601. Section
This study provides the basis for the VHSIC model appearing in MIL-HDBK-217F, 5. 31. Reliability Assessment
Using Finite Element Techniques, RADC-TR-89-281,
AD MI 6907.
This study addresses surface mounted solder interconnections and microwire boards platedThe report gives a detailed account of the factors to be through-hole (PTH) connections.
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit. 32. Reliability Analysis/Assessment of Advanced Technologies, RADC-TR-90-72, ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble IUemories) appearing in MIL-HDBK-217F, Section 5. 33. Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices, AFWAL-TR81-1052. 34. 35.
Reliability/Design Thermal Applications,
MIL-HDBK-251.
NASA Parts Application Handbook, MIL-HDBK-978-B (NASA). This handbook is a five volume series which discusses a full range of electrical, electronic and electromechanical component parts. It provides extensive detailed technical information for
each component derating, failure part such as: definitions, screening mechanisms, construction details, operating characteristics,
techniques,
standard
parts,
environmental
considerations, and circuit application. 36. Nonelectronic Parts Reliability Data 1991 , NPRD-91. This report contains field failure rate data on a variety of electrical, mechanical, electromechanical and microwave parts and assemblies (1400 different pafi types). It is available from the Reliability Analysis Center, PO Box 4700, Rome, NY 13440-8200, Phone: (31 5) 337-0900. Reliability Assessment of Critical Electronic Components, RL-TR-92-1 97, AD-A256996. This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2, resistors, capacitors, transformers, coils, motors, for the following device categories: relays, switches, circuit breakers, connectors, printed circuit boards and surface mount technology.
37.
Supersedes
page C-3 of Revision
c-3
MI L-HDBK-217F NOTICE 2
APPENDIX
C:
BIBLIOGRAPHY
38. Handbook of Reliability Prediction Procedures for Mechanical Equipment, NSWC-94/L07.

This Handbook includes a methodology for nineteen basic mechanical components for evaluating a design for R&M that considers the material properties, operating environment
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare Center, Bethesda, MD 20084-5000, Phone @Ol ) 227-1694.
Custodians: Army - CR Navy - EC Air Force -17 Review Activities: Army - Ml, AV, ER Navy - St-i, AS, OS Air Force -11, 13, 15, 19, 99 User Activities:
Army - AT, ME, GL
Preparing Activity: Air Force -17 Pro)ect No. RELI-0074
Navy - CG, MC, YD, TO

Air Force -85
c-4
Supersedes
page C-4 of Revision
STANDARDIZATION
DOCUMENT q. NUMBER
DOCUMENT IMPROVEMENT (See /nstrucfion -Reveme Side)

DOCUMENT TfTLE
PROPOSAL
Equipment
MIL-HDBK-217F,
NAME OF SU8MlTflNG
hJotlce 2
ORGANRATION
Reliability
4. n
Pred~ctlon of Electronic
(Marx one) VENDOR
TYPE OF ORGANKATtON
n b. ADDRESS (Street, Ory, State, 21P Code)
USER
MANUFACTURER
c1 1. PROBLEM AREAS a Pamgraph Number and Wording
OTHER
@Padfy)
I b
Recommended
Wording
c.
Raaaon/l?a@wle forRacommetition:
6.
REMARKS
7a. c.
NAME OF SUBM1lTER MAILINQ ADDRESS
(fJiSf, FIrsf, - @hOfld Ml)
b. 8.
WORK TELEPHONE NUMBER (hciude Ama Code]. 00 tonal DATE Of SU6MtSS10f4 (YYMkVDO)
(Streef, Ctfy, Sfafe, ZIP Code) - Optional
M DD 82MAR 1426
1
----
----
---
------
l-*4a
nuawbw9
- -.
.-
-.
I .
INSTRUCTION S In a comlnumg eftorf to make our 8tMIdarctMtton documents better, the 000 Provtdes thts form for u6e in 6ubmlttkyj comments Thw hxrn may be and sug ostlons tor Irnprrwemrmts All users of m!lltaw stanctardlzallon documents are Wted lo provloe surJgestlons along me t(nos md(catod IaDed along the 100se edge (DO NOT STAPLE, I dnd Molded In bIocK 5, be as spectflc as poss!blo de(ache 2 IOIOW about particular problem areas such as wofdln wtvctI required Inlerprelahon, was 100 ngla, resmctwe, loose, amtxcyous. or was mcompaoble, Enter m block 6 any remarks nol relarea to a spectfic paragraph of the wordm changes winch wou5 alleviate the problems and give Proposed b were recewed If block 7 IS II ! ed out, an acknowledgement WIII e mahd 10 you MM! 30 days 10 let you know that your COmmenlS document and are tremg cons(aerea NOTE. This form may not be used to request copies Comments 6utrmltted requirements on current contracts
referenced document(s) or ?0 amend (XWW6CIMI requirements
of documents,
on thh fofm
nor to request do not con611tute
wawers, dev!atlons. or c~anf!cat~on of specil~catlon or Imply aumotiza!lon to waive anyPortion f the o
(Fold along this line)
(Fold a/ong fhk he)
DEPARTMENT OF THE AIR FORCE RIJERSS Griffiss AFB, NY 13441-5700
OFFICIAL BUSINESS
PENAllY FOR PRIVATE USE S300
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.
NOTICE OF CHANGE
NOT MEASUREMENT SENSITIVE

MIL-HDBK-217F
NOTICE 1 10 JULY 1992
MILITARY HANDBOOK RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F 1. The following pages of MlL-HDBK-217F have been revised andsupersede thepages listed. New Page(s) vii 5-3 5-4 5-7 5-8 5-9 5-1o 5-11 5-12 5-13 5-14 5-19 5-20 6-15 6-16 7-1 Date Superseded Page(s) vii 5-3 5-4 5-7 5-8 5-9 5-10 5-11 5-12 5.13 5-14 5-19 5-20 8-15 6-16 7-1 7-2 12-3 12-4 A-1 A-2 A-3 A-4 A-5 A-6 A-7 A-6 A-9 A-1O A-1 1 A-12 A-13 A-14 A-15 A-16 Date 2 December 1991 2 December 1991 2 December 1991 2 December 1991 Reprinted without change 2 December 1991 Reprinted without change Reprinted without change 2 December 1991 2 December 1991 Reprinted without change 2 December 1991 Reprinted without change 2 December 1991 Reprinted without change Retxinted without chancre 2December 1991 2 December 1991 Reprinted without change Reprinted without change 2 December 1991 2 December 1991 Reprinted without change 2December 1991 2 December 1991 2 December 1991 2 December 1991 2 December 1991 Reprinted without change Reprinted without change 2 December 1991 2 December 1991 2 December 1991 Reprinted wfihout change 2 December 1991
2 December 1991
2 December 1991 2 December 1991 2 December 1991 2 December 1991
-.. . --
2 December 1991 2 December 1991

7-2 12-3 12-4

A-1 A-2 A-3 A-4 A-5 A-6 A-7 A-6 A-9 A-10 A-1 1 A-12 A-13 A-14 A-15 A-16
2 December 1991
2 December 1991
AMSC N/A
DISTRIBUTIONSTATEMENT A : Approved forpubfic release; distribution unlimited,

AREA-RELI T
2.
3,
Retainhepagesof this notice and inserl before the Table of Contents. t

Holders of MlL-HDBK-217F will verify that page changes and additions indicated have been entered. The notice pages will be retained as a check sheet. The issuance, together with appended pages, isaseparate publication. Each notice istoberetained bystocking points unfil the militaty handbook is revised or canceled. Preparing Activity: Air Force -17.. Project No, RELI-0066
Custodians: Army - CR Navy - EC
Air Force -17

Review Activities: Army - Ml, AV, ER Navy - SH, AS, OS Air Force- 11, 13, 14, 15, 18, 19,99 User Activities: Army - AT, ME, GL Navy - CG, MC, YD, TD Air Force -85
FOREWORD M IL-HDBK-2 17F, Notice 1 is issued to correct minor typographical errors in the basic F Revision. MILHDBK-217F (base document) provides the following changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C): 1. New failure rate prediction models are provided for the following nine major classes of microcircuits:
. . . . . . . . .
Monolithic Bipolar Digital and Linear Gate/Logic Array Devicee Monolithic MOS Digital and Linear Gate/Logic Array Devices Monolithic Bipolar and MOS Digital Microprocessor Devices (Including Controllers) Morrolitho Bipolar and MOS Memory Devices Monolithic GaAs Dgital Devices Monotiihic GaAe MMIC Devicae Hybrid Microcircuits Magnetic Bubble Memories Surface Acousfii Wave Devices
This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to
60,000,inear t microcircuitsup to 3000 transistors, bipolar and MOS digital microprocessor and cowith
processor up to 32 bits, memory devices with up to 1 milfion bits, GaAs nwnotithic microwave integrated
circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 transistors. The Cl factors have been extensively revised to reflect new technology devices with improved reliabitify, and the activation energies representing the temperature sensitivity of the dice (rcT) have been changed for MOS devices and for memories. The C2 factor remains unchanged from Ihe previous Handbook version, but includes pin grid arrays and surface mount packages using the same model as hermetic, solder-sealed dual in-line packages. New values have been included fOr the quafity factor (~), the learnin9 factor (flL), and the environmental factor (rtE). The model for hybrid microcircuits has been revised to be simpler to use, to delete the temperature dependence of the seal and interconnect failure rate contributions, and to provide a method of calculating chip junction temperatures. 2. A new model for Very High Speed Integrated Circuits (VHSICArHSIC Like) and Very Large Scale Integration (VLSI) devices (gate counts above 60,000). 3. 4. 5. 6. The reformatting of the errfire handbook to make it easier to use. A reduction in the number of environmental factors (nE) from 27 to 14. A revised failure rate model for Network Resistore. Revised models for TVvTs and Klystrons based on data supplied by the Electronic Industries Association Microwave Tube Division.
Supersedes page vii of Revision F
vii
5.1
MICROCIRCUITS,
GATEILOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION 8ipolar Devices, Digital and Linear Gate/Logic Arrays MOS Devices, Digital and Linear Gate/Logic Arrays :: 3. Fiefd Programmable Logic Array (PLA) and Programmable Array Logic (PAL) 4. Microprocessors
~=
(ClZT + CLW) ~QrtL Fail.res/106 Hours
Bi129kK Digitaland LinearGate/LogicArray Die Complexity Failure Rate -C, DQital No. Gates 1 101 1,001 3,001 10,001 30,001 to 100 I c1 1 .0025 .0050 .010 .020 .040 .080 Linear No. Transistora 1 101 301 1,001 to to to 100 300 1,000 I c, I .010 .020 .040 .060 up to 200 201 to 1,000 1,001 to 5,000 .010 .021 .042 PLAliAL No. Gates c,
to
1,000
to 3,000 to 10,000 to 30,000 to 60,000
J-- 1to 10,000

~ c1 Linear No. Transistor ~ c1 .010 .020 .040 .060 .16 .29 I 1
MQS Digital and Linear Gate/LocricArrav Die ComDlexitv Failure Rate - C, . Digital No. Gates 1 101 1,001 3;001 10,001 30,001 1 to 100 to 1,000 to 3.000 to 10;000 to 30,000 to 60,000 PLAIPAL No. Gates up to500 501 to2,000 2,001 to 5,000 5,001 to 20,000
c, .00085 ..0017 .0034 .0068
I
MOS c1 .14 .28 .56 :E
NOTE: For CMOS gate counts above 60,000 use the VHSIC/VHSIC-Like model in Section 5.3
I
Die Complexity Failure Rate - Cl No. 8iiS UP tO 8 Upto16 UP to 32 Bipolar c1 .060 .12 .24
All Ofher Mo J Parameters Parameter Refer to T C2 ~E, ~Q, ZL Section 5.8 Section 5.9 Section 5.10
Supersedes
5-3
5.2
MICROCIRCUITS,
MEMORIES DESCRIPTION 1. Read Only Memories (ROM) 2. Programmable Read Only Memories (PROM) 3. Ultraviolet Eraseable PROMS (UVEPROM) 4. Flash, MNOS and Floating Gate Electrically Eraseable PROMS (EEPROM). Includes both floating gate tunnel oxide (FLOTOX) and textured polysilicon type EEPROMS 5. Static Random Access Memories (SRAM) 6. Dynamic Random Access Memories (DRAM)
n % = (cl T+ C2 E+ Lcyc) o rtLFailures/l 06 l-lows

Die Complexity Failure Rate - Cl MOS PROM, UVEPROM, EEPROM, DRAM EAPROM .00085 .0017 .0034 .0066 .0013 .0025 .0050 .010 SRAM (MOS & BiCMOS)
*
Memory Size, B (8its) up to16K 16K<B564K 64K < B < 256K 256K<Bs1M
ROM .00065 .0013 .0026 .0052
.0078 .018 .031 .062
.0094 .019 .038 .075
.0052 .011 .021 .042
4=or w Total No. of

Programming Cycles Over EEPROM Lie, C up to 100 100< CS2OO 200< c s 500 500< CS1K IK<CS3K 3K<CS7K 7K<C515K 15K < C s20K 20K < C s 30K 3OK<CS1OOK lOOK < C s 200K 200K < C s 400K 400K < C s 500K TexturedFlotoxl .00070 .0014 .0034 .0068 .020 .049 .10 .14 .20 .68 1.3 2.7 3.4 Poly2 .0097 .014 .023 .033 .061 .14 .30 .30 .30 .30 .30 .30
A2 Factor for l..cycCalcdation Total No. of Programming Cycles Over EEPROM Life, C UP to 300K 300K c C s 400K 400K < C s 500K Textured-Poly A2
o 1.1 2.3
All Ofher Mo ?IParameters Refer to Parameter T C2 ~E, XQ, ZL %YC (EEPROMS Section 5.8 Section 5,9 Section 5.10 Page 5-5
1. Al =6.817 x10-6(C)
2. No undertying equation for TexturedPoly.
only) k-= 0 For all other devices
5-4
Supersedes
5.3
MICROCIRCUITS,
VHSIC/VHSIC-LIKE
AND VLSI
CMOS
DESCRIPTION CMOS greater than 60,000 gates ),P = kg DnMFGrcTncD + LBPZEZQZPT + LEOS Failures/l 06 Hours
I Manufacturing Process Correction Factor - ZMFG Manufacturing Process QML or QPL Non QML or Non QPL MFG .55 2.0
Package Type COWW6011 Factor - rtpT Packaqe Type DIP Pin Grid Array Chip Carrier (Surface Mount Technology) Hermetic 1.0 2.2 4.7 PT Nonhermetic 1.3 2.9 6.1
pie Complexity Corred[on Factor - ZCD .Feature Size (Microns) .80 1,00 1.25 A<,4 8.0 5.2 3.5 .4< A<.7 14 6.9 5.8 Die Area (cm2) .7< As1.O 19 13 8.2 1.0< A<2.O 38 25 16 2.0< A <3.0 58 37 24
A = Total ScribedChipDie Area in cmz cD=Pfi) (~) 64))+36 Die AreaConversion: cm2 = MlL2+l Ni,000 Package Base Failure Rate - LRP Number of Pins :: 40 44 46 52 64 64 120 124 <AA BP .0026 .0027 .0029 .0030 .0030 .0031 .0033 .0036 .0043 .0043 .0047 .0060
X~ = FeatureSize (microns)
Electrical @XStreSS FailureRate- kEOs VTH(ESD Susceptibility (Voles))+ I I o- 1000 >1000-2000 >2000-4000 >400016000 > 16000 ~os .065 .053 .044 .029 .0027 EOS
= (-h (1 -.00057 exp(- .0002Vw)) LOO1376 (voits)
kBp NP 1
= =
.0022 +((1.72x10-5)(NP)) Number of Package Pins
VTH . ESD Suaceptibilii
Voltage ranges which willcausethe partto fail. lfunknown, use O-1000 volts.
Supersedes
MIL-HDBK-217F ~
I
5.4
MICROCIRCUITS,
GaAs MMIC AND DIGITAL
DEVICES
DESCRIPTION Gallium Arsenide Microwave Monolithic Integrated Circuit (GsAs MMIC) and GaAs Digital Integrated Circuits using MESFET Transistors and Gold Based Metallizafion
Die Complexity Failure Rates - C+ c,

I
Complexity No. of Elements) Ito loo 101 to 1000
Device Application Factor - rr~ ,, Application I MMIC Devices Low Noise & Low Power (s 100 mW) Driver & High Power (> 100 mW) Unknown
4.5 7.2
1. Cl acxounts for the following active elements: transistors, diodes.
1.0 3.0 3.0
I
L19iW me coWJleW Failure Rates- Cl
Complexity (No. of Elements) I c1
Digital Devices All Digital @plicafions
1.0
F
1. Cl
accounts for the following acfwe
elements: transistors, diodes.
ZL, 7?E, XQ
I
Section 5.10
-1
5-8
I
5.5 DESCRIPTION Hybrid Microcircuits MICROCIRCUITS, HYBRIDS
I
NC xc = =
Lp = [ x Nc ?,C (1 +.2 ZE ) nF rrQ q ]
Failures/l 06 Hours
Numberof Each ParticularComponent Failure Rateof Each ParticularComponent
The general procedure for developing an overall hybridfailure rate is to calculate anindividual failure= rate for each component type used in the hybrid and then sum them. This summation is then modified to
aCCOUntOr the overall hybrid funCtiOn (nF), SCreening leVel (IIQ), and MatUrity (nL). The hybrid paCkage f failure rate is a function of the active component failure modified by the environmental factor (i.e., (1 + .2 XE) ). Only the component types listed in the followin9 table are considered to contribute si9nificantfy to the overall failure rate of most hybrids. All other component types (e.g., resistors, inductors, etc.) are considered to contribute insignificantly to the overall hybrid failure rate, and are assumed to have a failure rate ot zero, This simplification ia valid for most hybrkfs, however, if the hybrid consists Of mostly passive components then a failure rate should be calculated for these devices. If factoring in other component types, assume nQ = 1, nE =1 and TA = HybridCaseTemperaturefor these calculations. Determination of k. Determine Ac for These Component Types Microcircuits 5 Handbook Section Mak\ These Assumptions When Determining kc C2 = O,rtQ = 1, nL = 1, TJ as Determined from Sedron 5.12, ~p rtE = 1 (fOrSAW). = O (for VHSIC),
Discrete Semiconductors
~Q = 1, TJ as Determined from Section 6,14, nE=l. ~ =1, TA . Hybrid Case Temperature,
Capacitors
10
rr~=l. UOTE: If maximum rated stress for a die is unkrmwn, assume the same as for a discretely package die of the same type. If the same die has several ratings based on the cfk.crete packaged twe. assume the towest ratina, Power ratina used should be based on case tem~eratura
Circuit FuncffonFactor- !tF Circuit Type I

Digital Video, 10Mf-tz<f<l Microwave, f >1 GHz Linear, f <10 MHz Power I GHz 1.0 1.2 2.6 5.8 21 I
All Other Hybrid Model Parameters
rtf-, XE ~Q,
I
1 Refer ta Section 5,10
Supersedes
page
5-9 of Revision
5-9
MIL-HDBK-217F I
5.6 MICROCIRCUITS, SAW DEVICES DESCRIPTION Surface Acoustic Wave Devices
~=
2.1 rcQ~E Failures/i06 Hours
Quality Factor - ~Q
Environmental Factor - nE
Screening Level
10 Temperature Cycles (-55C to +125C) with end point electrical tests at temperature extremes. None beyond best commerical practices.
m
.10
Environment .GB GF GM
% .5
2.0 4.0 4.0 6.0 4.0 5.0 5.0
1,0
I
+
Ns Nu Alc IF %c
5-1o
MIL-HDBK-217F
5.7
MICROCIRCUITS, MAGNETIC BUBBLE MEMORIES
The magnetic bubble memory device in its present form is a non-hermetic assembly consisting of the following Iwo major structural segments:
1.
A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor loops), and required control and detection elements (e.g., generators, various gates and detectors). A magnetic structure to provide controlled magnetic fields consisting of permanent magnets, coils, and a housing.
2.
These two structural segments of the device are interconnected by a mechanical substrate and lead frame. The interconnect substrate in the present technology is normally a printed circuit board. It should be noted that this model does not include external support microelectronic devices required for magnetic bubble memory operalion. The model is based on Reference 33. The general form of the failure rate model is: kp = kl where: k, = Failure Rate of the Control and Detection Structure k, = ?tO [NcCf lltTlnW + (NcC21 +C2)~ElzDzL + kp Failures/l 06 Hours
~ = Failure Rate of the Menmry Storage Area
Chips Per Package - NC Nc = Number of Bubble Chips per Packaged Device
Device ComDlexifv Failure Rates for Control and Dete~on Structure - C,, and Co,
I
)-
cl, C21
= = =
.00095( N1).40 .0001 (N1)226 Number of Dissipative Elements on a Chip (gates, detectors, generators, etc.), N, s 1000
Temperature Factor rt~ -Ea

[ 8.63 X 10-5
XT= (.1) exp Use: a a TJ = = =
1 ( ~-%
1-
N,
.6 to Calcufate nTl .55 to Calculate ~T2 Junction Temperature ~C), 25s TJ<175
TJ
TcAsE + 10C
5-11
5.7 fmcFfocwfculT,
MAGNETIC
Buf3eLE
MEMORIES
Write Duty Cycle Factor - xw
Device Complexity Failure Rates for Memory Storage Structure - C12 and C22 C12 = .00007 (N2)3 .00001 (N2).3 Number of Sits, N2 ~ 9 x 106
~w
=1
for Ds .03or RIW>2154 Avg. Device Data Rate Mfg. Max, Rated Data Rate No. of Readsper Write
C22 = =
D. FvW .
NOTE: For seed-bubblegenerators, divide

W by 4, or use 1, whichever is Ireater.
All Other Model Parameters Parameter Section C2 5.9

rtQ, ~L
Duty Cycle Factor - rtm * D = .9D + .1 Avg. Device Data Rate = Mfg. Max. Rated Data Rate 1
nE,
5.10
5-12
Supersedes
5.8
MICROCIRCUITS, XT TABLE FOR ALL
Supersedes
page
5-13 of Revision
5-13
MIL-HDBK-217F
5.9
MICROCIRCUITS, C, TABLE FOR ALL Packa~e Failure Rate for all Microcircuits Packaqe Type Hermetic DIPs - Cg
Number of Functional Pins, N P
w/Solder or Weld Seal, Pin Grid Array (PGA)l , SMT (Leaded and Nonleaded) .00092 .0013 .0019 .0026 .0034 .0041 .0046 .0058 .0064 .0079 .0087 .010 .013 .015 .025 .032 .053 .076 .097
DIPs with Glass Sea12
Flafpacka with Axial Leads on 50 Mil Centers3
Cans4
Nonhermetic: DIPs, PGA, SMT (Leaded and Nonleaded)5
3 4 6 :0 12 14 16 18 22 24 :: 40 % 128 180 224
.00047 .00073 .0013 .0021 .0029 .0038 .0048 .0059 .0071 .0096 .011 .014 .020 .024 .046
.00022 .00037 .00078 .0013 .0020 .0028 .0037 .0047 .0056 .0083 .0098
.00027 .00049 .0011 .0020 .0031 .0044 .0060 .0079
,0012 .0016 .0025 .0034 .0043 .0053 .0062 .0072 .0082 .010 .011 .013 .017 .019 .032 .041 .088 .096 .12
I
1. 3. C2 = 2.6
X
104 (Np) 108
2. 4.
C2 = 9.0 x 10-5 (NP)l 51 C2 = 3.0 x 10-5 (N~2.01
C2 = 3.0 x 10-5 (NP)l.82 1.06
5.
C2 = 3.6 X 104 (Np)
I
NOTES: 1. 2. 3. 4. SMT: Sutface Mount Technology DIP Dual In-Line Package If DIP Seal type is unknown, assume glass The package failure rate (C2) awounts for failures aewciated only with the package kself. Failures associated with mounting the package to a circuit board are accounted for in Section 16, Interconnetijon Assemblies,
5.12 MICROCIRCUITS,
7W !-!
, ,,, , , ,Cz,
TJ
DETERMINATION,
(FOR
HYBRIDS)
CZU,G,
,0,,00
Material
Typkxl Usage
Typical Thickness, Li (in.)
Feature From Figure 5-1
Thermal Conductivity, Ki W/in2 _ () Clin ~ ()() i
( in2 CAV
Silicon
Chip Device Chip Device Chip Attach Chip/Substrate Attach Chip/Substrate Attach Chip Attach Glass Insulating Layer Substrate, MHP Substrate, PHP Case, MHP Case, MHP Case, PHP
0.010
0.0070 0.0001 0.0030 0.0035 ,0.0035 0.0030 0.025 0.025 0.020 0.020 0.020
A
A B BIE BIE B c D D F F F .
2.20
,76 6.9 1.3 .0060 .15 .66 .64 6.6 .42 4.6 9.9
.0045
.0092 .000014 .0023 .58 .023 .0045 .039 .0038 .048 .0043 .0020 ~
GaAs
Au Eutectic Solder Epoxy (Dielectric) Epoxy (Conductive) Th~ Film Dielecfrfc
Alumina Beryllium Oxide Kovar Aluminum Copper
NOTE: MtiP: Muftiihip Hybrkl Package, PHP: Power Hybrid Package (Pwr: 22W, Typically)
i:
(+)(o
A
eJc = n Ki Li A= = = = Number of Material Layers
Wlin2 ~ (Ueer Provided or From Table) () Thickness o! #h Material (in) (Lfser provtied or Fmm Table) Thermal Conductivity of flh Materfal Die Area (in2).. If Die Area cannot be readily determined, estimate ae follows: A= [ .00278 (No. of Die Active Wire Terminals)+ .041712
TJ = TC+ (eJc).(pD! Tc eJc PD = Hybrid Case Temperature ~C). If unknown, use the Tc Defaufl Table shown in Section 5.11. = Junction-to-Case Thermal Resistan@ ~C/W) (Ae determined abve) = Die Power Dissipation (~
Supersedes
5-19
MIL-HDBK-217F
5.13
MICROCIRCUITS, EXAMPLES CMOS Digital Gate Array
Example 1:
Given:
A CMOS digital timing chip (4046) in an airborne inhabied cargo application, case temperature 4BC, 75mW power dissipation. The device is procured with normal manufaofurets screening
consistingof temperaturecycling, constant acceleration,electricaltesting, seal test and external visual inspection, in the sequencegiven. The component manufacturer also performs a B-1evel
!\ burn-in followed by electrical testing. All screens and tests are pertormed to the applicable MILSTD-883 screening method. The package is a 24 pin ceramic DIP with a glass seal. The device has been manufactured for several years and has 1000 transistors. ~= (cI~T + C2@ ~nL section 5.1
c1 T
= =
.020 .29
1000 Transistors -250 Gates, MOS Cl Table, Digtal Column Determine TJ from Section 5.11 TJ = 48W + (28C/W)(.075W) = 50C Determine YtTfrom Section 5.6, Digital MOS Column.
C2 E ~Q
= = =
.011
4.0
Section 5.9 Section 5.10 Section 5.10 Group 1 Tests Group 3 Tests (B-level) TOTAL
=Q =2+=
3.1
50 Points 3SLPMUS 80 Poi@
80
= 3.1
L=l ~=
Section 5,10 [ (.020)(.28) + (.011) (4)] (3.1)(1)= .15 Failure/106 Hours
Exampfe 2:
Given:
EEPROM
10,000
A 128K Flotox EEPROM fhat is expected to have a TJ of 80C and experience
read/write cycles over the Iiie of the system. The part is procured to all requirements of Paragraph 1.2.1, MI L-STD-883, Class B screening level requirements and has been in production for three yeare. It is packaged in a 28 pin DIP with a glass seal and will be used in an airborne uninhabited cargo appliiafion: ~=(C11CT+C2 rtE+~c)m ISL Section 5.2
c1 T C*
= = =
.0034 3.6 .014
Section 5.2 Section 5.8 Section 5.9
6.6
TRANSISTORS, HIGH FREQUENCY, GaAs FET
kfatChing Jeh%Ork F FactOr-mM
Environment Factor M 1.0 2.0 Environment GB G. GM N~ Nu 4C
Matching Input and Output Input Only None .. .
1.0
2.0
5.0 4.0
11
4.0
4.0 5.0 7.0 12 16 .50 9.0 24 250
QuaIii Factor - ~
Quality JANTXV JANTX JAN Lower W .50 1.0 2.0 5.0
IF %c UF RW SF MF ML
Supersedes
6-15
MIL-HDBK-217F
6.9
TRANSISTORS, HIGH FREQUENCY,
S1 FET DESCRIPTION Si FETs (Avg. Power c 300 mW, Freq. >400 MHz)
SPECIFICATION MIL-S-1 9500 ~ = kbtTTltQ7cE
Failures/l
06 Hours
Base Failure Rate -~ Transistor Type MOSFET JFET I Lb .060 .023 Quality JANTXV JANTX JAN
-
Quality Factor - ~ mQ .50 1.0 2.0 5.0
TemperatureFactor - m
-
Lower
W
TJ (oC)
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
lq .
T 1.0 1.1 1.2 1.4 1.5 1.6 1.6 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7
eXp -1925
TJ(oC) 105
110 115 120 125 130 135 140 145 150 155 160 165 170 175
3.9 4.2 4.5 4.6
Environment Factor - XE Environment GB GF GM NS NU Alc IF E 1.0 2.0 5.0 4.0 11 4.0 5.0 7.0 12 16 .50 9.0 24 250 ; ;
5.1 5.4 5.7 6.o 6.4 6.7 7.1 7.5 7.9 a.3 S.7
((
+-~
))
%c UF RW SF
TJ -
JunctionTemperature~C)
MF
ML c,
MIL-HDBK-217F
7.1
TUBES, ALL TYPES ExCEPT TWT AND MAGNETRON DESCRIPTION All Tvot?sEXCetlt ravelinaWaveTubeaand Magnetrons T
Includes Recefiere, CpT,-Thyratron, Crossed Fi~ld Amplifier, Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed Klystron, CW Klystron
~=
lbttLrrE
Failures/IO
Hours
(Includes
Tube Type Receiver Triode. Tetrode. Pentode PowerRectifier CRT -.. . Thyratron Crossed Field AmDlifier QK681 SFD261 Pulsed Gridded 2041 6952 7835 Transmitting Triode. Peak Pwr. s 200 KW. Ava. Pwr. & 2KW, Freq. s 200 MHz Tetrode& Pentode, Peak Pwr. S 200 KW, Avg. Powers 2KW, Freq. s 200 KW If any of the above limits exceeded Vidican Antimony Trisulfide (Sb2S3) Photoconductive Material Silicon Diode Arrav Pho&onduc~v( Material Twystron VA144 VA145E VA145H VA913A Klystron, Pulsed 4KMP1OOOOLF 8568 L3035 L3250 L3403 SAC42A VA642 Z501OA ZM3038A
Base Failure Rate-kh snd WearOut Fallurea) )th Rsndo Tube Type Lb 5.0 10 9.6 50 260 150 140 390 140 75 100 250 Klystron, Low Power, (e.g. Local Oscillator) Klystron, ContinuousWave 3K3000LQ 3K50000LF 3K210000LCI 3KM300LA 3KM3000LA 3KM50000PA 3KM50000PA1 3KM50000PA2 4K3CC 4K3SK 4K50000LQ 4KM50LB 4KM50LC 4KM50SJ 4KM50SK 4KM3000LR 4KM50000LQ 4KM50000LR 4KM170000LA 8824 8825 8826 VA800 E VA853 VA856B VA888E 30 9.0 54 150 64 19 110 120 150 610 29 30 28 :: 37 140
79 57
51 48 850 450 490 230 43 230 86 :: 100 ~8 150 190
15 130 120 280 2;: 2%
lfthe CWKlystron of interest ianotlisted above, use the Alternate CW Klystron ~ Table on the following page.
lfthepuIsed Klystron ofinterest isnotlisted above, use the Alternate Pulsed Klystron ~ Table on the following page.
MIL-HDBK-217F NOTICE 1 TUBES, ALL TYPES EXCEPT TWT AND MAGNETRON
7.+
Alternate Base Failure Rate for Pulsed Klystrons - k P(W .01 .30 .60 1.0 3.0 5.0 --6.0 10 25 ~ F P = = . .2 .4 ,6 16 17 17 18 21 25 30 34 60 F(GHz) .8 1.0 2.0 16 16 17 17 16 1S 16 19 23 25 26 31 35 40 40 45 75 90 16 18 21 22 34 45 63 75 160 4,0 6.0 16 20 25 26 51 75 110 16 21 30 34
Learning Factor - n,
..
16 16 16 16 16 17 17 17 le 20 19 22 21 25 22 26 31 45
T (years)
LLLi
YIL = =
=
10(T)-2.1, 1 sT<3
2,94(F)(P)+16 OperatingFrequencyin GHz,0.2s Fs6 PeakOutputPowerin MW,.O1sPs25 and p ~ 490 F-2.95
10, Ts1 I,T>3
Numl.?erof Years since Introduction to Field Use
See previouspagefor other KlystronBaseFailure Rates.
Environment Factor - XC . Environment GB E .50 1.0 14 8.0 24 5.0 8.0 6.0 12 40 .20 22 57 1000
Alternate Base Failure Rate for CW Klystrons - ~ F(MHz) P(KW) 300 500 6001000 2000 4000 6000 600C 0.1 1.0
3.0 5.0 e.o 30
GF GM N~ Nu J?c IF %c UF ARw SF MF ML CL
31
32 33
31 32
33 34 35
33 33
34 35 37
34 34
35 36 36
36 39
40
47 46
49 50
57 57
5s
a6 66
41
42
10
30 50 80 I 00
2
45 55 70 60
36
46 56 71
3e
4S 58 73
39
49 59
43
81 0.5P + .0046F + 29
% P F =
Averageoutput PoWern KW,0.1s Ps 100 i and P.5e.o(lo)6(F)1.7 OperatingFrequemy in MHz, 300< F<6000
See praviouspagefor othar KlystronBaseFailura Ratas.
7-2
Supersedes
12.2 ROTATING DEVICES, SYNCHROS DESCRIPTION RotatingSynchros and Resolvers kp=kbnSmNnE

NOTE:
AND RESOLVERS
Failures/106
Hours
Synchros and resolvers are predominately used in eervice requiring only slow and infrequent motion. Mechanical wearout problems are infrequent so that the electrical failure mode dominates, and no mechanical mode failure rate is required in the model above.
Numberof BrushesFactor- m.,

Lb 30 35 40 45 50 :: 65 .0083 .0088 .0095 .010 .011 .013 ,014 .018 85 90 95 100 105 110 115 120
125
__ii-H~.=
130 135
.032 .041 .052 .069 .094 .13 .19 .29 .45 .74 ~
T
Environment Factor - rtE Environment GE GF GM Ns E 1.0 2.0 12 7.0 18 4.0 6.0 18 25 28 .50 14 38 680 NU AC IF %c UF RW sF MF ML
00535exp(-)85
= Frame Temperature~C)
TF
If Frame Temperature is Unknown Assume TF. 40 C + Ambient Temperature
Sie Factor-me
DEVICE lYPE Synchro Resolver
~;a~er 2 3
Size 10-16 1.5 2.25
Size 180r Larger 1 1.5
cL
Supersedes
page
12-3 of Revision
12-3
MI L-HDBK-217F
DESCRIPTION ElspsedTime Meters
1P = kbXTrtE Failures/l
06 Hours
Base Failure Rate - L
Environment Factor - rc,-
Type A.C. Inverter Driven

Commutator D.C.
Lb 20
30 80
Environment GB GF GM NS Nu
E 1.0 2.0 12 7.0 f8 5.0 6.0 16 25 26 .50 14 38 N/A ~ ~ I
Temperature Stress Factor - rcT Operating T ~C)/Rated T (W) o to .5 .6 .6 1.0 T .5 .6 .8 1.0
Alc IF %c UF RW SF MF ML CL
MIL-HDBK-217F .. APPENDIX A: pARTS cOUNT RELIABILITY PREDICTION
Parts Count Reiiablllty Prediction - This prediction method is applicable during bid proposal and early design phases when insufficient information is available to use the part stress analysis models
shown inthemain bodyof this Handbook. Theinformation needed toapply themethod is(l) generic pafi types (including complexity formicrocircuils) andquanfifies, (2) part quality levels, and (3) equipment environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the following tables, multiplying it by a quafify factor, and then summing if with failure rates obtained for other components in the equipment. Thegeneral mathematical expression for equipment failure rate wifh this method is: Equation 1
for a given equipment environment where: EQUIP 9 Q Ni n = = = = Total equipment failure rate (Failures/1 06 Hours) Generic failure rate for the i h generic part (Failures/1 06 Hours) Qualiiy factor for the i h generic part Quantity of i h generic part Number of dflerent generic part categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment. If the equipmenf comprises several unfis operating in different environments (such as avionics systems with units in airborne inhabited (Al) and uninhabited (Au) environments), then Equation 1 should be applied to the Portions of theequipmenf in each environment. These "environment-equipmenf'' failure rates should be added todetermine total equipment failure rate. Environmental symbols aredefined in Secfion3. The quality factors to be used with each part type are shown wtih the applicable ?.9tables and are not necessarily thesame values that areused in the Part Stress Analysis. Microcircuits have anaddifional multiplying factor, rtL, which accounts for the maturity of the manufacturing process. For devices in production fwoyears ormore, nomodticetkcn isneeded. Forthose inpmducfionl essfhanfwoyears,~ should bemuMpfied by fheappmpriate ~Lfa~Or (See Pa9e A4). . ltshould benot~th~m generic failure rates areehownfor hybrid micmimufis. Eachhybrid isafairfy unique device. since none of these devices have been standardized, their complexity cannot be determined fromtheir name or function. ldefically orsimilady named hybrids canhave awide range of mmplextythat t~atiscategorization for~~ses oftMsprWMion method. Ifhybrids areanficipatedfor a design, their use and consfrucfion should be thoroughly investigated on an individual basis with appficafion of the prediction model in Section 5. The failure rates shown intMs@endx were calculded byassigning model default values to the failure rate models of Section 5through 23. Tfrespeciflffi defauffvaIues used forthemodel parametera are shown with the~Tablesformicrocircuifs. Default parameteraforallotherpartclasses are summarized in thetables starting on Page A-12. Forpafiswith charaderisti= whchdtifer &gn~cantly fmmthe assumed defaults, or parts used in large quantties, the underlying models in the main body of this Handbook can be used.
A-1
A-2
Supersedes
page A-2 of Revision F
Supersedes
A-3
MIL-HDBK-217F APPENDIX A: PARTS COUNT
A-4
MIL-HDBK-217F NOTICE 1 iNDIX A: PARTS COUNT
Supersedes
page A-5 of Revision
A-5
A-6
Supersedes
page A-60f
Revision F
Supersedes
DIX
A:
PARTS COUNT
A-8
Supersedes
oooo,
.r
l----
oo~o
o~o~ Z--Z.-Z
I
I
A-1 1
MIL-HDBK-217F NOTICE 1 fDIX A: PARTS COUNT
0000, ..-.
0, 0, ----
0.0.
00 --
ON
:-!
?
0.
gg 0,
A-12
Supersedes
page A-1 2 of Revision F
.---CiIL+u+tiu+
..-,-
CUL.I
m ~
doe A-i Q SuperseG== ~av= ~-,-,

,-.?.0
.+
Dn.,;c.i#.
r , ,=.,D,U,, ,
A-1 3
MIL-HDBK-217F
NOTICE 1
A-14
Supersedes
=g.
Oo, ------eon, oooo
o,ooqoooo
. . . . Oa, . . . --------Oo, qq
A- 16
Supersedes page A-1 6 of Revision F
MIL-HDBK-217F
BEF? 1991
SUPERSEDING
MIL-HDBK-217E, 2 J8nwry 1990
NotIce 1
MILITARY
HANDBOOK .
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
AMSC N/A DISTRIBUTION STATEMENT A: Approved for public release; distribution unlimited.
MIL-HDBK-217F
DEPARTMENT OF DEFENSE WASHINGTON DC 20301
RELIABILllY
PREDICTION
OF ELECTRONIC
EQUIPMENT
1. This standardization handbook was developed by the Department of Deferw federal agencies, and industry. with the assistance of the military dep~ments, 2. Every effort has been made to reflect the latest information on reliability prediction procedures. It is the intent to review this handbook periodically to ensure its completeness and currency. 3. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this dooument should be addressed to: Commander, Rome Laboratory, AFSC, AlTN: ERSS, Griffiss Ak Force Base, New York 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
....
MIL-I+DBK-217F
CONTENTS
SECTION 1.1 1.2 1.3 1: SCOPE Purpose .... .. .... ..... .. .. ... ... ....0...... .... .... .... . .... ....... ........ .. . ...... . .. .. .... .... ... ..... .. ... .... .... Application .. ...... ...... .... ...*.. ......... .... .... ...... . ,, *........ ..........*. .....*...... .... ........ ..... .. ...... @rnputefized RdiabWty Predktbn .. .... .. .... ...... .. ....... .. .... .. .. .... .. .. ...... ... .. .... ..... ... .....
q q q
11 1-1 1-1 21
SECTION
SECTION 3.1 3.2 3.3 3.4 SEHION
2:
REFERENCE
DOCUMENTS
... ... ....... .... .. ................... .. .. ... ... ... .... ... .... ... .....
3: INTRODUCTION Reliability Engineering . ........ .. The Role of Reliability Predktbn ...**.*.*..... ......... ................ ......... ................. ............. Limitations of Reliability Predictions ..... *..*.*... Part Stress Analysis Prediction ..... ........ ........ ...... . .. .... .. ..... ...... ... ... . ...0.. .... ... ... .... ....0
. . . . . . . . . . . . . . . . . . ...0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . q . . . . . . . . . . . . . . . . . . . . . . . . . . . . q
3-1 3-1 3-2 3-2 4-1 5-1 5-3 5-4 5-7 5-8 5-9 5-10 5-11 5-13 5-14 5-15 5-17 5-18 5-20
4:
RELIABILIN
ANALYSIS
EVALUATION
.....................*..*... .......................
q
SECTION
5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 SECTION 6.0 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 6.14 6.15
5: MICROCIRCUJTS, INTRODUCTION .......**...**.....................0..... ................. C3ate/Lo@cArrays and Microprocessors ...... ..................................*... .....*..... .............
Memorfes ... ..... .... .... .... .... ...... .. . ...... .... .. .. .... ........ ...... ... .......... .... .. .... .... .. ..... .. .. ........ VHSICNHSIC Like ... ........ ....... ........... ... ...... ........ .... ....... ....... .... .................... .......... GaAs MMIC and D@ai Devioes . ........ .... .............. ... ...... ........ ..... ... ..... .. .... .. .... .. .. ....... Hybrids . .. .. ............ .... ...... .... ... ...... .. ........ ........ .... ....... .......... .... ...... ........ ... .. .. ... ... .... SAW Devices .... .......... .. .... .... .. ...... ... .... .... ..... . ... .... ...... ... .... .. ...... .... .. .. ... ...... .......... Magnetic Bubble Memories ........ ............ .... .. ... .... .......... .... ...... ... .. ... ..... .. ...... .. .. .. ..... XT Table for All .......... ............ ...... ...... ............ ...... ................... ........ ...... ............ .......
q
C2 Table for AIl . ....... .... .... ........ .... ....... .. ...... .. .... .............. ... .. .... ... ..... .. .......... ...........
%EsXL and fiQ Tabk= for ~i ..... ........ .... .... .... ... .. .. ........ ...... ... ....... ....... ........ .. .. ...... ... TJ Determination, (All Except Hybrids) ...................................*... ............* .................. TJ Determination, (For Hybriis) ........... ......... ........................................... ....... .........
q
Examples .... ........ ........ .. .. ................... .. ........ .... .. .... ..... .... .......... ...... .... .... ... ...... .... .. 6: DISCRETE SEMICONDUCTORS Discrete Semiconductors, Introduction ....... ........... ....... ......... .... .. ... ..... .. ... .... ... ..... ... Diodes, Low F~ency ..... ........ .... .. .......... . .. .. ........ ...... ....... High Frequency (Microwave, RF) .... .......... .... .. ........ ..... ........ .... ....... .. ..... ...... Transistors, LOW Frequency, Bifx)lar ... .... .... ....... ... .... ..... .... ...... .... .. .... ..... ........ ... ... ... Transistor, Low Frequency, Si FET ..... ............... ............................................... ...*.. Transistors, Unijmction ..........00....................... .............. ....... ........ .......... ........... ... ... Transistors, Low Noise, High Frequency, Bipolar . ..... ..... .... ...... ... ... ... .... .. ..... .. .. ........ . Transistors, High Power, High Frequency, Bipolar .....................* ..........* .............. ... ... Transistors, High Frequency, GaAs FET .. .. ..... .............0.... .. .... .... ... ... .... ....... .. ........... Transistors, Hgh Frequency, Si FET ....... ....* ... .. ..... ... ... ...... .... ...... .. .... . .... ...... .... .... ... ~ end SCRS . ... .... ........ ........ .... .. ........... .... ...... ........ . ... .. .... .. .... .. .... ...... .. . .... Optoelectronics, Detectors, Isolators, Emitters ........ ........ .. ... .. .......... .. .... .... ... .. .... ..... Optoeiectmnios, Alphanumeric Displays ... .... .. .... ................. .. .... ...... .... ... .... ... ..... .. ... OploekWonios, Laser Diode ................. ......* ...... .. ............ .... .... ... ...... .. ..*...... . .... ... .. TJ Determination ..... .. .... .... .... ............ ... .... .... ...... .. ...... .. .... ..... .... ...... .... .... ..... .. .... ....
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dbdes, q
6-1 6-2 6-4 6-6 6-8 6-9 6-10 6-12 6-14 6-16 6-17 6-19 6-20 6-21 6-23 6-25
Example . ..... .... .. ........ ... .... ......... ............... .... ...... .. .................... .. .... ....... .. .... .. .........
HI
...
MIL-HDBK-217F
7: TUBES All Types Except TM/T and Magnetron ........ ....................................................... ....... Traveli~ Wave . ....... .... ...... .... ........... ...... .. ...... .. ........ .... ......... .............. .. ...... ........... Magnetron .. .. .......... .... .... .. ........ ... .......... .. .... ...*..... ...... .......... .. .... .......... ..... .........0.. LASERS 0: Introduction ... .................... ..... .... .. .... ...... .. ...... .... ......... .......... .. .. ............. .... ...... .. .... Helium and Argon . .......... ... .......... .... ..... .... ... ..... .. ...........** . ... .... .... .... .... ...............* . .. Catin Dmxide, Sealed . .... .. ............ .. ....... ... ... .... ...... .. ...... .. .. ... ........ ...... .. ...... ....... .. Carbon Dioxide, Fbwing .... .. ...... .... ........ .... ... .... .. .... ...... .... ....... ........ ...... ........ ......... SoIii State, ND:YAG and Ruby Rod .... .... .... .... ... ............ .. ............ .. .. .. ..... .... ...... .... ... RESISTORS 9: Introduction .... ... ... ....... ............ ... .. ........ .... ... ... ................... .. .. ........ .... ......... ...... .. .. .. Fixed, Composition (RCR, RC) ................................. ............................... ................. I%@, Fitm (RLR, RL, RN (R.C, or N). RN) . ............................ . ....... .... .................... .... Fixed, Fltrn, Power (fWI) ........ ........ ...... ........ ... .. .. .......... .. ................... ............ ........... Network, Fixed, Film (RZ) .. ........... ............. ............. .............. .................... ................ Fixed, Wirewound (RBR, RB) ... ......... ................... ............................ .................. ...... Fixed, Wkewound, Power (RWR, RW) ......... ...... .... .. .... ... .......... .. ........ .. ........... ...... ... Fixed, Wirewound, Power, Chassis Mounted (RER, RE) ............................................ Thermistor (RTH) .......... ..... ........ .... ..... .... ...... .. .. .... .... ..... .... .... ........ .. ............ ... .. .. .... Variable, Wirewound (RTR, RT) ......... ................................................................. ...... Variable, Wkewound, Precision (RR) ......... ....... ... ....... .......... .... .... ..... ................. ...... Variable, W/rewound, Semiprecision (RA, RK) . .... ................ ....... ................... ..... ..... . Variable, Wkewound, Power (RP) . .......... .. ...... .. .. ..... .......... .... .... ....... .... ........ ..... ...... Variable, Nonwirewund (RJ, RJR) ................................ ........................................... Variable, Composttlon (RV) ...................*.. ........ ................................ ...... .. ................ Variabte, NOnwmwu nd, FitmwKI Prectsion (RQ, RVC) ... .... ........ ....... .. .... ................ Cakulation of Stress Rat& for Potent&meters . .... ........ .... .... ..... .... .... .. .. .... ..... ........ ... Example . .. ..... .. ...... ....... ...... .... ..... ...... .... ... .. .. ............. .... .... ... .... .. ................... .........
CONTENTS SECTION
7.1 7.2 7.3 SECTION 8.0 8.1 8.2 8.3 8.4 SECTION 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 9.10 9.11 9.12 9.13 9.14 9.15 9.16 9.17 SECTION
7-1 7-3 7-4
8-1 8-2 8-3 8-4 8-5
9-1 9-2 9-3 9-5 9-6 9-7 9-8 9-1o 9-12 913 9-15 9-17 9-19 9-21 9-23 9-25 9-27 9-29
10.1
10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 10.10 10.11 10.12 10.13 10.14 10.15 10.16 10.17 10.18 10.19 10.20
10: CAPACITORS Fixed, Paper, By-Pass (CP, CA) .. .... .... ...... ...... .. .. ... .... .... .......... ....... .............. ........ ... Fixed, Feed-Through (CZR, CZ) . ........ ...... ........ .. ....... ...... .... .... ......... .. ...... .... .... .... ... Fixed, Paper and Plastic Fitrn (CPV, CQR and CQ) ..................................................... Fixed, Metallized Pqw, Paper-Plastic and Plastic (CH, CAR) .. ...... .. .... ... ............... .... . F&ed, Plastic and Metallized Plastic .............................................. ............................ Fixed, Super-Metallized Plastic (CRH) ........ ....... ..................... .... ........ ....... ...... .... ..... F&ed, MICA (CM, CMR) ........ .. .. .... .............. ... .. .. .. .. ...... ........ ............. ...... .. ...... .... ..... Fixed, MICA, Button (CB) ..... .. ....* . .... .......... .. ... .... .... .... .......... ..... .. ..... ..... .... .... .... .. ... Fued, GJass (CY, CYR) ......... ........ ............. ....... ... ...... ............ ..... .. .. .... .... .. .. .... .... ..... Fixed, Ceramic, General Purpose (CK, CKR) ............................................................. . and Chip (CCR and CC, CDR) . ...... ........ . Fixed, Cerarnk, Tenpemtum ~ Fixed, Electrolytic, Tantalum, Solid (CSR) ........ .... .... .... .... ............. .... ....... .. .. ........ .. ... Fixed, Electrolytic, Tantalum, Non-Solid (CL, CLR) ... .... .... .... ..... ........ ... ......... ..... .... ... Fbd, Ektrotytic, Aluminum (CUR and CU) .... .. ...... .... .. .... ... .... .... .. .. .. .. ..... .... ...... .... . Fixed, Electrolytic (Dfy), Aluminum (CE) ...................................... .............................. Variable, Ceramic (CV) .. .......... ............ ............. ........................ ................................ Variable, Pkton Type (PC) ........ ......... ......... ......... ......... ................... ........................ Varitie. ArTfimmr (C~ ............. ...... ........ .. ........... ...... ...... ....... ... ..... .... ........ ...... ... Variable and Rxd. Gasor V.um(CG) .. .... .. ..... ......... ... ...... ........ .... ... .... ......... ...... .. Example ... ..... ........ .. ............ ... ........... .. .. ..... .... .. ..... .... .... ........... .... ..... .... ........ ..... .. ..
1o-1 10-3 10-5 10-7 10-9 10-11 10-12 10-14 10-16 10-18 10-20 10-21 10-22 10-24 10-26 10-27 10-28 10-29 10-30 10-32
iv
MIL-HDBK-217F
CONTENTS SECTION 11.1 11.2 11.3
DEVICES INDUCTIVE 11: Transformers ........... .... .... .......... .. .... ..... .... .... ... ... ...... .... ....... .... .. .. .... ...... .. ..... .... .... .. cob .... .....*.. .............................................................................*...... ..................... Determination of Hot Spot Temperature ............................................................0...0.. ROTATING DEVICES 12: Motors . . .... ........ .... .....* .. ........ .. .......... ......... .... ...... .. .. .... .............. ..... ........ ............. Synchros and Resolvers .............. .... ........ ..... .. ...... .... .... ........... ... ....... .. ............ ... .... EIapsed Time Meters . .. .. .... ............*.. .. ........ .... ... ..... .... .... ............ ....... .. .. .... ........ ... .. Example ... ...... .. ... .. .. ..... ........ ......... ........... .. .... .. ..... .... ........... ...... .. .. ... .. .......... ..... ....
q
11-1 11-3 11-5
SECTION
12.1 12.2 12.3 12.4 I
12-1 12-3 124 12-5
I
(
SECTION 13.1 13.2 SECTION

14.1 34.2 14.3 14.4 14.5 SECTION 15.1 15.2 15.3 SECTION 16.1 SECTION 17.1 SECTION 18.1 SECTION 19.1 SECTION 20.1 SECTION
RELAYS 13: Mechanbl ......................................0.. ......................... ...................................0..... Solid State and Time Delay
q q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*..... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..0......
13-1
13-3
14-1 14-2 14-3 14-4 14-5
14:
SWITCHES
Toggle or Pushbutton ............ ..... ...... ...... ........ .... .............. .......... .. ... ... ............ ........ Basic sensitive .. .... ...... .. .. .......... .. .. ... ...... .... .. .... ...... .... .... ....... ............ ........ .. .. ... .... .. Rotary .. ... .......... ...... ... .... ...... .. .......... .... ...... ... ...... .. .... ........ .... .... .. ..... ....... ... .... .... ... Thumbwheel ... .. ....... ....... ...... ....... .... ........ .... ........ .. .... ........... ...... ...... ....... ... ..... .... .. Circuit Breakers . ........ ........ .... .... ...... ........... .... .. ... ....... .... ....... .... .. .. .... .... ........ ..... .... 15: CONNECTORS General (Except Printed Cir@t Board) .......... .... .... ...... ... .. ...... .... ... ..... ... .... .... .... ....... Printed Circuit Board . ... ........ .... .... ...... .... ... .... .... .. .. .. .. ........... ...... .. ...... ...... .. .. ....... .... Integrated CituJlt Sockets .. ...... .......... ...... .. ... .......... .... .... .. ...... ... .. .. .............. .... .... ...
15-1 15-4 15-6
lNTERCONNECTtON ASSEMBLIES 16: lntemomectkm Assenb+ies with Ptated Through t-totes . .. ....... ....... ... .... .... ........ ....... . 17: CONNECTIONS Connections ..........................................................................................................
METERS 18: Meters, Panel .... ...... .. .... .. .. ................... .... ...... .... ...... .... ... .... ........ ........ .... .... ... .... .... 19:
16-1
17-1
18-1
QUARTZ CRYSTALS Quartz Crystals.......................................................................................................

LAMPS .. ... .. .. .... ...... .... . ...... ...... .... ........ .. .... .. ....... ... ... .... .... .... .... .. .. . .. .... ........ .. .. .......
19-1
20: hmp
20-1
21.1 SECTION 22.1 SECTION 23.1

APPENDIX APPENDIX APPENDIX
ELECTRONIC FILTERS 21: ................................................................................ Eiectmrtb Fitters, NorwTunabte FUSES 22: Fuses . . . ....0.... .. .. ....... ........ .... .......... .... ............ ... .. .... .. .. .... .... ....... .. ..... ... .. .. .. .........
q
21-1
22-1
23: MISCELLANEOUS PARTS Miscellaneous Patis ....... ..... ......... .. .... ... .... .... .... .......... ....... .... ........ .. .... ........ .. ....... .. A: B: C: PARTS COUNT RELIABILITY AND VLSI PREDICTION CMOS . ...... .... .. ..... . ..... . .. .. .. .. ... ... .. . MODEL) ... .. .. ... ... .
23-1
A-1
B-1 c-1
VHSIC/VtiSIC-LIKE BIBLIOGRAPHY
(DETAILED
. ......... .... .......... .... ... ...... .... .... .. .... ....... ...... ........ ............ ... ..
MIL-HDBK-217F
CONTENTS
LIST OF TABLES
Table Table Table Table Table 3-1: 3-2: 4-1: &l: S2: Parts with Multi-Level Quality Spedfications .............................. .......................... Environmental Symbol and Desdptiin .............................................................. Reliability Analysis Cbckfist ...... ............... ... .. .......... .... ........ ..... ........ .. .......... .... Default Case Temperatures for All Environments (~) ..... .. .... ....... ................. ....... Approximate Thermal Resistance for SernbncWtor Devices in Various Package Sizes ..... .... ..... ............. .... ........ .... ........ ... ............ .... ...... ... . 3-3 3-4 . 6:2; 6-24
LIST OF FIGURES
Figure 5-1: Figure 8-1: Figure 9-1: Cross Sectbnal Vk!w of a Hybrid with a Single Multi-Layered Substmte ......... ... .. .. Examples of Active O@cal Surfaces ....... ........ ...... ... .... .... ... ..... .. ............. .... .... ... MIL-R-39008 Deratinfj cum ... .. ............. ........................... ... ................. ... .. ... .. . 5-18 8-1 9-1
vi
MIL-HDBK-217F
FOREWORD
This revision to MIL-HDBK-217 provides the following changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C): 1. New failure rate prediction microcircuits:
q
models are prov-kled for the following nine major classes of
MonoliihE B~lar
Dqital and Linear Gate/lm@c Array Devioes Gate/Logic Amy Devfces
Monolithic MOS Digital and Lmar
Monolithic B@olar and MOS Digital Microprocessor Devkes (Including Controllers) Monolithic Blpotar and MOS Memory Devices Monolithk (W@ Di@tal Devices
Monolithic GaAs MMIC Devices Hybrid Microcircuits Magnetic Bubble Memories Surface Acoustic Wave Devices
This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to 60,000, linear microcircuits with up to 3000 transistors, bipolar and MOS digital microprocessor and coup to 32 bits, memory devices with up to 1 nlftion bits, GaAs monolithic microwave integrated The
processor
circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 transistors. Cl factors have been extensively revised to reflect new technology devices with improved the activation energies representing the temperature MOS devices and for memories.
reliability,and
sensitivity of the dice (nT) have been changed for
The C2 factor remains unchanged fmm the previous Handbook version,
but includes pin grfd arrays and surface mount packages using the same model as hermetic, solder-sealed dual in-line packages. and the environmental New values have been included for the quality factor (~), factor (@. the learning factor (~),
The rrwfel for hybrid microcircuits has been revised to be simpler to of the seal and interconnect failure rate contributions, and to temperatures. Like) and Very Large
use, to delete the terrperature
dependence
provide a method of oakulating ohp jundon 2.
A new model for Very High Speed Integrated Circuits (V1-fSIC/VHSIC Scale Integration (VLSI) devices (gate counts above 60,000). The reformatting of the entire handbook to make H easier to use. A reduction in the number of environmental fado~ A revised failure rate model for Network Resistors. (~E) from 27 to 14.
3. 4. 5. 6.
Revised models for Ms and Ktystrons based on data supplied by the Electronic Industries Association Microwave Tube DiWon.
vii
-- . ...=--------
----
--u.
I --
-u
MIL-HDBK-217F
1.0
SCOPE
Purpoee ti.~
- The purpose of thfs MruboOk
is to establish and maintain consistent and uniform
for estimating the hhemnt rek&Slity (i.e., the reUabflityof a mature design) of rnilbry @edron& predictionsckhg aoquis&bn progmms ~~~ systems. It provides a common basfs for ~ for military ebctrcmc systems and equipment. h atso establishes a common basis for oomparfng and evafuatlng reliability predictions of rdated or competitive destgns. The handbook is intended to be used as a tool to increase the reliabil~ of the equ@merx being designed. 1.2 Appllcatlon - This handtmok oontains two methods of reMWiJity pmdiotbn - Part Stress Analysis In Sectfons 5 through 23 amf 7%rts Count- in Appendix IL These methods vary in degree of informatbn needed to apply them. lhe Part Stress Anafysii Method recpires a greater amount of detailed
In&mtfon and ts appfkabfe mrfng the later design phase when actual hardware and c&wits are being designed. The Parts Count Method raquires less infonnatbn, generally part quantities, qmtity level, and the applkatbn environmen& This method Is appfioable cMng the early de@ase and du~ pmpo@
formulation. In general, the Parts Count Metfwd wffl usually result in a more conservative estknate (i.e., ~f*mte)ofsystem r@taMtythanthe Parts Stress Method. 1.3 Computerfzad Rellablllty PmcffctlOn - Rome Laborato~ - ORACLE is a computer program Based on developed to aid in appfying the part stress analysis procedure of MIL-HDBK-217. environmental use chamcteristks, piece part oount, thermal and electrical stresses, subsystem repair rates and system configuration, the program calculates piece part, assemMy and subassembly failure rates. It also flags overstressed parts, afbws the user to perform tradeoff analyses and provides system meantime-to-failure and availability. The ORACLE computer program software (available in both VAX and IBM co~atible PC versbns) is available at replacement tape/disc cost to all DoD organizations, and to contractors for applbcatbn on spedfk DoD contraots as government furnished property (GFP). A statement of terms and conditions may be obtained upon written request to: Rome Laborato~/ERSR, Grtffiss AFB, NY 13441-5700.
f-l
,.. -, ..-, .-
..
MIL-tiDBK-217F
2.0
REFE!?ENCE
DOCUMENTS
~s~cites somespecificatbns which have beencanoslle dofwhiohdescrb ectevicesthatam nottobeused fornewdes@n. lWiinfomatti&s Wms$arytmcxames omeofthesed evicasarusecfin soalfed %ff-th~ eqdpment which the Depwtment of Defense purchases. The documents cited m this section are for @dance and information.
SPECIFICATION MIL-C-5 MIL%l 1 MlL-R-l 9 MIL-G20 MIL-R-22 MIL-C-25 MIL-R-26 MIL-T-27 ML-(X2 MIL-G81 MIL-92 MIL-R-93 MIL-R-94 MIL-V-9S W-L-1 11 W= W-F-1726 w-f-i814 MfL-G3098 MIL-G3807 MIL-G3643 MlL4N8so
SECTION #
10.7 9.1 9.11
Ca@&s,
~,
FMed,Mii-Dieisctric, General Specifii

F&a composition (Insufated) General $pecuii
for
for
Resiekx. Variab&gWirewound (Low Operating Tmpwatum) General Spo&@atbn for ~) @Pw@%=d~ ~ v@fw=Estdfkhed and Nonestabiished Reliability, General Specifiiion
Rask!or, Wuewow for
10.11
9.12 10.1 9.6 11.1
10.15
Power Type, General Spa&cation for
~. fiti p~r~~~ Dire Cwrent (Hermetically Sealed in Metal Case@, General Specification for
Resistor, Fued, Wkewound (Power Type), Genarai Specifhbn
for
Tmnsfonner and fndwtor (Audio, Power, High Power, High Power Pulse). General Sfxdiibn for
Pdar&ed), 10.16
~r.
Fiu~ ~fo~~ (DG fgruminum.W Gened spadkamn
E~@,
Capacitor, Variable, Ceramic Dielectric (Trimmer). General Specification
for
10.18
9.5 9.14 23.1 20.1 14.5 22.1 22.1 19.1 15.1
Ctpcitor,
Variable, Air Dielectric (Trimmer), General Specificaii for
for
Resistor, Fwed, Wkewound (Aocura!e), General Spdfkdon

Resistor, Variable, Composition, General Specifiin
for
Vior,
-.
Interrupter and Self -RectifyingO General Specification for hadaant Miniature, Tungaran Fikment
Ckauit Br@der, MOidOdC&m, BrarmflcfrcuRand~ Fuse, Q@ridge, CJassH (Thii mvem renewable and mrwnebie) Fuse, Camidge, High Interrupting Cqmcity
Unk ~
for
~~end Spcifiw&m for
, SpdMlOns
Connector, oax&~Radii Frequency, Series Pulse, Gene@ C
15.1
Connector, Coaxial, Radio Frequency, Series NH, Associated Ftiings,

~neral s~ for
15.1
Connector, Coaxial, Radio Frequency, Series LC
Luw
MIL-HDBK-217F
. 2.0 REFERENCE DOCUMENTS
SPECFKATJON . Mt4X655
SECTION #
15.1
15.1
conneotor, P&q and Ramptda, _(Jl=SeriasTwin)and Associated Fitlmgs, General SpuM@mn . ~. SpacMiion S*. ~bn =. =b~~~ fq ~ for ~ (po~* B&~ TYP@ -~~
ML-C-3767
MIL-S-3786
14.3
Rotary (Circxit Selector, Low-Current (Capady)), for Toggle, Envlmnmantally sealed, General
General
MfL-G3950
14.1 10.13
Speckatbn
for
MIL-G3965 MIL+5015
Elti~
(No-lkf
Electrolyte), Tantalum, General
15.1
~, Eledrkal, Spedflcation for
Circular Threaded, AN Type, General
MIL-F-5372 MIL-R-5757 MIL-R-6106 MIL-L-6363 MIL-S-8805 MIL-S-8834 MlL-M-l 0304 MlL-R-l 0509 MIL-C-1095O MIL-C-1101S
M!L-GI 1272
22.1 13.1
I%aa, Currati Limiter Type, Amaft Relay. Electrbl (For Electronic and Communkation General Specifbaticm for
Type Equipment),
13.1
Relay, Electromagnetic (Including Established Reliability(ER) Typs),
~-~s~
20.1 14.1, 14.2
for Incandemt,
Aviation Service, General Raquirament for
bnp,
SwhcheS and Switch Assemblies, Swxdtivo and Push, (SW for General Sfx@in
Switches, Toggle, Positive Brealq General Specification for Meter, Electkal Indicating, Panel Type, Ruggedzed, Spedficatbn for General
Action)
14.1 18.1
9.2 10.8
Resistor, f%cad IWm (High Stability). General Speoikatbn
for
-Or,
for ~, ~bn Capadtor,
Fud,
Mii
Dielectric, Button Style, General Specifiiion

(General Pupae), Ganeral
10.10
FU~, Ceramic Dtiric for
10.9 10.2
Fixed, Glass Dlelectrb, General Spcfkatbn
for
MlL-C-l 1693
Capadtor, Feed Through. Radio Interference Reduction AC . Sdedh Metal Casos)Eatabkhed and No~ for MaMfiio General Spdicatbn l!!!! Resistor, Freed, Film (Power Type), General Specifiin
andDC,
hed
MlL-R-l 1804 MIL-G12889
9.3
for
10.1
Cap&or, By-Pa&: Radio - Interfermce Reduction, Paper Dielectdc, AC d DC, (Hermetbally Sealed in Metallk Casas), Ganeral Spectficatbn for Resistor, Variable, Wirewound, Preasion, General Specification for
MIL-R-12934
9.10
2-2
r- . . .
nv
-1
[1-/!1
, ---
--
.uu
l--
,-- --------
. .
ba
MIL-HDBK-217F
2.0
REFERENCE
DOCUMENTS
sPEcfFlcATloN
SECTKMJ #
ML-C-141S7
10s
~, -d: a (papcurrent (Hermabd lySeabdin @J-~ ~n
for
PI-tic) or mastic Dweot* Direct Refkwty, Matal Cases) amMshed
MIL-G14409 MIL-F-15160 MK-C-IS305 MfL-F-15733 UL-GW312
10.17
~. vSpac#ioatbn for
Fuse, Instmnem
(Pii
TyP, Tlar
Trimmer), GWWraI
22.1 11.2 21.1 10.4
Poww amf Telephone Radio Frequency, General Specifiibn General SpecMin for for
Coil, Fixed and Vari*, FBtler,Rack ~. Dbbdrk, ~ibn Imarkmrux,
-, Metzdl&ed (Paper, Paper Plastic or Plastic Film) Dkocl Cummt (Herrneticaliy sealed in Metal Cases), Gemral for
ML-F-13327 MIL-R-16546
MIN-19500 MIL-R-19523 ML-R-19M8 ML-C-19978
21.1
Pass, Band Pass, Band Suppression and Dual Filter, High Pass, k Funcknkg, General Specdfiition for
9.7
Redstor, Freed, WWewound(Power Type, Chassis Mounted), General

Specificatbn for SomkOnductor Oevice, Geneml Specification for Relay, Contmi, Naval Ship&oard Roley, Tree, Delay, lherm~ General Specifiition for
6.0 13.1 13.1 10.3
~or, Fmecf Plastic (or Paper-Plastic) Dielectric (Hermetically Sealed m Metal, Cemmc or Glass Cases), EstafXished and Noneatabiiahed ReGabilii, General Specifiicatbn for
MIL-T-21036 MUA-21097
11.1 15.2
Transformer, Pulse, Low Power, General Specikatiin Spedfbatbn for
for
Connector, Electrical, Printed WInng Board, General Purpose, General
MIL-FM2097
9.13
Rasistor, VarMMe, Nonwirewound (AdjustmentTypes), General
Spedfbatbn for
MIL-R-Z?664 MIL-S-2271O 9.2 14.4 Resistor, F&d, S*. -nerd Mary ~* Film, lnsdated, General Specifiiion for
(Printed Circuit), (Tlwmbwheel.
In-1ine and Pushbutton),
ML-S-22665 MIL-C-22W2
14.1 1s.1 10.19
Switches, Pushbutton, Illuminated, General Specification for Connector, Cyfinddcal, Heavy Outy, General Specification for = ~~ ofi,v*. V=xum MI-* General Specifiibn
ML+163 M&GZ3269 MIL-FW3265
10.9
em. Fi~. GSpeclkatbn for Reaiir,
Diekrik
Estiiiihed
Reliabllky, General
9.1s
Variable, Nonwirewound, General Specificationfor
2-3
..
MIL-HDBK-217F
2.0
REFERENCE
DOCUMENTS
SPECfFICATlON
sEcTKm
# Fuse, bstrumont
MIL-F-23419 MIL-T-23648 MfL-G24308 MIL-G25516 MfL&+6482
22.1
9.8
Type, Gonad
~km
for
Thormistw, (Tharmafly Sensitive Resistor), Insulated, Generaf Spadfioatbn for Connec40r, EPanel. Genoraf Cortnector, ~ -~~fof Rectangular, Miniature Polatizad Shell, Rack and
15.1
Spodcatbn for
, Miniature, ~ Environment Resistant Type.
15.1
15.1
Cormoctor, Efoctr&f (Circular. Minirdure, QuH kamnoc& Environment Rl&ting) ReU@ac& and Plugs, General Spocik@ion for Resistor, VariaM, Speciftiion for WKewound, (Lead Screw Actiied) General
MN-R-27208 MIL-C-2f1748 MIL-R-28750 MfL-G288tM MIL-C-2884O MIL-hR851 O MIL-H-38S34 MIL-I-38535 MIL-C-38999
9.9
15.1
Con-or, Ebct~ Rectangular, Ra& and Panel, solder Type and Crimp Type Contads, General Spacifiition for Relay, Solid State, Ganeral Specification for Connector. E&ctric Rectangular, High Density, PoMzed Cantral Ja&euww, Genoraf Spedficstion for, Inactive for New Designs Conrmdor, ~ cimUlar Threaded, High Denaity, High Shock Shipboard, Class D, General Spechation for M&oc5rcuits, Generaf Specificatii for
13.2 15.1
15.1
5.0 5.0 5.0
Hybrid Microcircuits, General Specification for Integrated Circuits (Microcircuits) Manufacturing, General Speclfiiion for Qxvwc#or, E~ Chcular, Miniature, Hgh Density, Quick Disconnect, (Bayonet, Threadad, and Breech Coupiing) Environment Resistant Remowble Crimp and Hermetic Solder Cmtacts, General Specifiiion for qor. ~~, Mh Specification for
15.1
MfL-C-39001
MIL-R-39002
10.7
Dkktk
Estabkhed ReliaMfity, Generat
9.11
Raa&stor, Variable, Wkewound, Sem&Precision, General Spa&icstion for - a_~&*ewg T-lJm* (Aaamte) EstaMshed Fteflabllity, General
MfLG39003
10.12
MIL-R~
9.5
Raslatcx, Fixed, ~nd, Specification for -N. ~~. -I& EstalMshed Relilii, Resistor, Fixed, W~ General Speckition
MtL+39006
10.13
(NortsoMf Ek%rolyte) Tantalum for General SpadkMon nd (Power Type) EstaMished Reliability. .
MfL-Raoo7
9.6
for
- -
.-. .
..
..
..
MIL-HDBK-217F
2.0
REFERENCE
DOCUMENTS
SPEOFICATR3N
MIL-R~
SECTION # 9.1
Redstor, Fixed, Campoah n, (Insutated) Established Reliability,

Genefal S@fio@hfor
9.7
R@!sMcw, m ~nd (Power Type, chassis Mounted) EstaMished R@aMfity, General SpecMcMion for Cd, Fbrti Spec#iibn Radio Frequency, Molded. Established Ratiiity, for
MLC-3901O
11.2
General
MIL-CX9012 UL-C39014
15.1 10.10
Connector, Coaxial, Racfb Frequency, General Spdfii~
for
~. ~ Carandc Dielectric (General purpose) EsMMbhd R8iiabili!y, Gmeral SpeoWation for WkewOund (Lead screw Actuated) Emabfished Rdetor, V*, Reliability, General Spdfkatbn for Relay, Electromagnetic, Established ReIiabilii,
for Resietor, Freed, Fh General Specifiition
MK-C49015
9.9
MIL-R39016
13.1
MtL-R-39017
9.2
(insulated), Estabkhed Reliabitky, General
Specifiikm
MIL-G39018 10.14
for
Capacitor. f%ed, Ebctmlytio (Aluminum Oxide) Established Reliabil.~ and Nonestablished ReKaMIity, General SpecdfbNion for
Cfrcutt Breakera, Magn@iq Low Power, Sealed, Trip%ee, ~bn for General
MIL-C-39019
14.5
MIL-G39022
10.4
~r, ~d. Mettiized Paper, Paper-Plastic Film, or Plastic Film Dielectric, Direct and Alternating Current (Hermetically Sealed m Metal Caaas) Estabfbhed Reliability, General Specification for Resistor, Varkble, Nonwirewound, Precision, General Specification for
MIL-R-39023 MIL-R-39035
9.15 9.13
Resistor, Variable,Nonwhwound, (Adjustment Type) Established Reliability, General Spedkttbn for
MiL-G49142 MIL-P-5511O MIL-R-65W2 MIL-G55235 MIL-G55302 MILG65339 MIL-G65514
15.1 152 9.2 15.1 15.2 15.1 10.5
Conne@or, Triaxial, RF, General Specification for
Printed Wdng Boards

Resbtor,F~~EstddWd Reliabilii, General Specification for
Connector. Coaxial, RF, General Specif=tion for
Connector, Printed Circuit, Subassembly and Accessories Adapter, CoaJC~ RF, General SpeMc8tbn for qor. ~~, ,~k (CW M@tdfizd Plastic) Dielectric, Direct Current In Non-Metal Cases, General Spedfiibn for
Circuit Breaker, Magnetic, Unsealed, Trip-Free, General Specification for Transformer, Intormdiato Ftewemx, Radio Frequency, and Discriminator, General Specific&lonfor . -
MIL-C-5S629
14.5
MIL-T-S5631
11.1
MIL-HDBK-2 17F
2.0
REFERENCE
DOCUMENTS
SPECIFICATION ML-C-55681
SECTION#
10.11
~r, Rewility,
Chip. M@t@le bayer, Freed, Ceramic Diekct~ General Sp&iGatm for
Established
MlL~1511
15.1
Conne, Ekc&icaf, Circular, High Demity, Quiok Dmnect, Envhonment Resisting, and Acc=swies, General SpecHMh Circ@i6reaker, Remote ~ntrol, Thermaf, TripFree. General SpecMiion for Resbtor Notwodq Fixu!, Fti. Ganwal Spdkabn for
for
MIL-(X3383
14.5
MtL-R-S3401 MiL-G83421
9.4 10.6
~r, f%cf Supennetallizodf%stb f% DiskcMc(DC, ACor DC Soalecf in Metal Cases, ~bhed Refiabiiity, and AC) Hmwtb#y ud~~ Cwmecbr, EkcZrical, Rectangular, Mbrominiaturo, Garbefal Specification for
Polarized Shell.
MIL-C-83513
15.1
ML-C-83723
MIL-R=72s MIL-R-63726
15.1
Connedor, Ebctricd (Circular Environment Resisting), Receptacles and Plugs, GeneraJ Speclficatbn for Relay, Vacuum, GoneraI Specification for Relay, lime Delay, Elec!ric and Electronic, General Specifiiion for
13.1 13.1, 13.2, 13.3 14.1 15.1
MILoS-83nl
MN-C-83733
Switch, Toggle, Unsealed and Sealed Toggle, Ganeral Specifiin Conmw%x, Ebc!dc@, Miniature, Rectangular Type, Rack to Panel,
for
EnvironmentResisting,200 Degraas C Tcxal ContinuousOpOfa@J

Temperature, General Spedcatbn for for
MIL-S43734 STANDARD
MIL-STD-756
MIL-STD-883
15.3
socket
Pl@n
Electronic Components, General Specifiikm
Rehbility
Modeling and Prec&tbn
Test Mathods and Prmxdures for Microelectronics NASA Star#ad E&trid.
Mk4TD-975 MIL=WD-1!547 MtL-SlD-1~
Efactronicnd EbctmmachanbalPartsLkt a TechnioaI
Pmt8, Matwials qnd Procasses fof Spaco Launch Veh&k8, Requirements for ~ Requtrwnents ?orHyMd Mcrockufl FacflltWJand Unes
copies of specImat&ns and Stmdads required by contractors in comectbn with spcific acquisition functbns should be oMlnad fmrn the contracting activityor as directed by the a)ntracting offiir. ~ngle c _ - ako available(without haru8)uponwrfttenrequest to: I
StandwdizatbnDocument rderDesk O
700 Robins Ave. Building 4, Seotion D
Philadelphia, A 19111-5094 P (216) 697-2867
2-6
------
-----
- ~_
v.,
~.-y..,-..--
,.
. . -----
MIL-HDBK-217F
I I
3.0
INTRODUCTION
Rellablllty Englneerlng - Reliability k currently recognized as an essential need in miIitary 3.1 ebctronic systems. It is looked upon as a means for -cing costs fmm the factory, where rework of debotive cxmpcments adds a mn-proddve overhead expense, to the field, where repak costs Inotude not onty pa~ and labor but also transportation and storage. More knportantly, reliabilitydirectly inpacts force effectiveness, measured In terms of availability or sortie rates, and determines the stze of the bgistics w inhibitingforce utilization. The achievement of reliability is the fumtbn of refiabifity engineering. Every aspect of an eleotrodc system, from the purtty of matertals used in fts oomponent devices to the operatots Inteflaoe, has an impact on reliability. RelMWty engineering must, therefore, be appbd throughout the systems development in a dillgent and timely fashion, and integmted wfth other engbewhg disoi@nes. A variety of reliability engineedng tools have been developed. supportinga basic tool, reliabilitypredctbn. 3.2 This handbook provides the models
The Role of Reflablllty Prediction - Reliability predictbn provides the quantitative baseline needed to assess progress in reliabWty engineering. A prediction made of a proposed design may be
used in several ways.

of Computer Aided Design is the ability to rapidly generate alternative solutions to a particular problem. Reliability pmdiibns for each design alternative provide one measure of relative worth which, mrWned with other considerations, will aid in selecting the best of the available options. Once a design is selected, the reliabilii predktii nwiybe used as a @de to Iwpmvement by showing the hphest contdbutorsto faifure. If the pwt stress analysis method is used, it may also rewaf other Wtful areas for change (e.g., over stressed parts). The Impact of proposed design changes on reliabilityoan be detemnktedonly by comparfng the reliatMty predictions of the existing and proposed designs. The ablltty of the design to maintain an accepable reliability level under environmental extremes may be the need for The predctkms may be used to evafuate assessed through reHaMty pmdictbns.
A characteristic
erwtronmental control systems.

The effects of complexity on the probability of mission success can be evaluated through reliability predictions. The need for redundant or baok-up systems may be determined with the aid of reliability predictions. A tradeoff of redundancy against other reliability enhancing techniques (e.g.: more oooling, higher part quality, etc.) must be based on reliability predictions coupled wfth other pertinent considerations such as cost, spaoe limitations, eto. The predbtbn will also he~ evahwte the s@fficance of reportscf fallume. For exa@e, if emmml falkrres of one type or oo~nent occur In a system the predkted faliure rate can be used to determine whether
the number of failures Is commensurate with the number of components used in the system, or, that it
indicates a pmbbm area. Finally, reliability predictbns are useful to varbus other engineering analyses. As examples, the location of txdtt-h-test circuitry 6houfd be influenced by the predicted failure rates of the chwltry monftored, and
malntenanoe strategy plannem can make use of the relative pmbabifhy of a failures location, based on predictions, to minimize downtime. Reliability predbtbrts are also used to evaluate the probabilities of fajlure events described in a failure modes, effeots and criticalityanalysis (FMECAS).
3-1
----
-e
--
e-m~+
__.. ____.=---... ... .
MIL-HDBK-217F
3.0 INTRODUCTION
3.3
Limitations of Rellabiltty Prodktions - This handbook provides a common basis for reliability predictbns, based on anatysis of the best available data at the the of Issue. It Is interded to make reliability prediction as good a tool as possble. However, like any tool, reliabilii predktbn rrust be
used htefiigently,withdue oonskferat)onof its MnWions.

The first limitation is that the failure rate models are point estimates which are based on available data. Hence, they are valii for the condltbns under which the data was obtained, and for the devkes oovered. Some extrapolation during model development is possible, but the inherently empirical nature of the models can be severely restrictive. For exanple, none of the models m this handbook predict nuclear suMvability or the effects of bnizing radiatbri. Even when used in similar environmetis, the differences between system appliiions can be significant. Pmdkted and aohleved rWaMlty have atways been doaer for ground electronic systems than for avbnk systems, because the environmental stresses vary fess from system to system on the ground and hence
the field cor@tbns are In general cbser to the environment under which the data was oo#e@edfor the
prediction model. However, failure rates are also impacted by operational scenartos, operator characteristics, maintenance -s, measummmt ~es and dtlfe~~s In deftnftbn of falfure. Hence, a rellablflty predktlon should never be assumed to represent the expected field reliability as Mean-Tirne-Between-Removak, etc.). measured by the user (i.e., Mean-The-Between-Maintenance, This does not negate its value as a reliability engineering tool; note that none of the applications discussed above requires the predicted reliability to match the field measurement. Electronic technology is noted for its dynamk nature. New types of devices and new processes are oontjnually introduced, compounding the difficultiesof predkting reliability. Evolutbnary changes may be handled by extmpolatbn from the existing models; revolutionarychanges may defy analysis. Another Ilrnitatbn of retiablltty predktbns is the mechanks method re@res a signlfkant afmmt of design detail. mk of the process. The part stress analysis naturalty knposes a time and cost permtty.
More signiiioantly, many of the detatts are not avaitab+ein the earty des~
stages. For thts reason rn!s
handbook contains both the part stress anatysts method (Sectbns 5 through 23) and a simpler parts count method (Appendix A) which oan be used in early design and bid formulatbn stages. Finally, a basic limitation of reliability prediction is its dependence on correct application by the user. Those who correctly apply the models and use the information in a conscientious reliability program will find the predktbn a useful tool. Those who V&Wthe prediction only as a number whkh must exceed a specifiedvalue can usualty find a way to achievetheir ~at without any ion the system.
3.4 3.4.1
Part
Stress
Analysls
Predlctlon
Appltcabllfty - Th&s method is applicable when most of the design is completed and a detailed pads list incbding part stresses Is available. ft can also be used during later design phases for rel&bility trade-offs vs. patl selection and stresses. Sections 5 through 23 contain failure rate models for a broad variety d parts used in ekmtrmb equipment. The parts we grouped by major categories and, where appropriate, are subgrouped within oategorfes. For mechanical and electromechanical pats not covered by this Handbook, refer to Bibfbgraphy ftems 20 and 36 (Appendix C).
The failure rates presented appty to equipment under normal operating conditbns, Le., with power on and performingIts intended functbns in Its ~ended environment. Extrapolationof any of the base faihn rate models beyond the tabulated vahJessuch as high or subzero temperature, electrical stress values above 1.0, or extrapolation of any associated model modifiers is oompletety invalid. Base failure rates can be
interpolated between electrical stress values from O to 1 using the underlying equations. The general procedure for determining a board level (or system level) failure rate is to sum individually calculated failure rates for each oomponent. This summation is then added to a failure rate for the citcuit board (which includes the effects of solderfng parts to tt) using Section 16, Interconnection Assemblies.
3-2
MIL-HDBK-217F
3.0
INTRODUCTION
For parts or wires soldered together (e.g., a jumper wire between two parts), the connections model appearing in Section 17 is used. Finaliy, the effects of connecting circuit boards together is accounted for by adding in a faiiure rate for each connector (Section 15, Connectors). The wire between connectors is assumed to have a zem failure rate. For various sewice use profiles, duty cycles and redundandes the procedures described in MIL-STD-756, Reliability Modeling and Prediction, should be used to determine an effective system ievel faiiure rate.
3.4.2
Part Qualtty - rne~~of apmh~am effti~ti pm fdhmratea~~mlntb part models as a factor, *Q. Many parts am covered by spedfbations that have several quaffty levels,
hence, the part models have vaiues of XQ that am keyed to these qu~~ leve~= Such Pafis w~h their
quality designetora are shown h Table 3-1. The detdled requirements for these levels are ciearty defhed
in the applicable specffkation, except for mkrockcuits.

of MIL-STD-683
Mkmimfis
have qualhY levels which are

they are subjected.
depenckht on the ~mber
screens (or equivalent) to whii
TatNe 3-1:
w was
Parts With Multl-Level

E
Qua!lty Speclflcatlons
Uvumwa 7 UWw.
r.q. . . . . . -
Microcimuits Discrete Semiconductors Capacitors, Established Reiiabiiii (ER) Resistors, Established Reliablllty (ER) Coils, Molded, R. F., ReiiabUty (ER) Relays, Established Reliabiiily (ER)
S, B, B-1, Othec ~aliiy Screening Level
Judged by
JANTXV, JANTX, JAN D, C, S, R, B, P, M, L
S, R, P, M
S, R, P, M
R, P, M, L
Some Mrts are covered by older specifications, usualty referred to as Nonestablished that & not have rnutti-levels of qu~i. These part rn&fels generally have two qualfty MIL-SPEC.-, and Lower. If the part is procured in complete accordance specification, the ZQ value for MIL-SPEC should be used. If any requirements commercial part is procured, the XQ value for Lower should be used.
Reliability (Non-ER), levels d&i@ated & with the applicable are waived, or if a
The foregoing discussion involves the as procured part quality. Poor equipment design, production, and testing facilities can degrade pad quality. The use of the higher quality parts requires a total
W?U@M~ de$~ ~ W~ COtid process co-~rate with the high part quality. it wouid make iiile sense to procure high quality parts on!y to have the equqmentproduction procedures damage the paftS or introduce latent defects. Total equipment program descriptions as they might vary with different part quality mixes is beyond the scope of this Handbook. Reliability management and quality control
procedures are described in other DoD standards and publications. Nevertheless, when a proposed equipment development is pushing the state-of-the-art and has a high reliability requirement necessitating high quality pans, the ~ equipment program should be given careful scrutiny and not just
3-3
I
I
MIL-HDBK-217F
3.0 INTRODUCTION the parts quafhy. Otherwise, the bw failure rates as predicted by the models for hgh quality parts will not
be realized.
3.4.3
models h@lJde the Uee Environment - N Dart reliabm through the environmental factor,- %Er except ~orthe effects of bn~
effeots
of envkorlmental Streeses @~~. The dem~b~ of
these envhunentsareshownin TaMe3-2. The~fac!or isqxmtfWdwithfn eachpartfaiUre rat8rnod8l. These environments encorrpass the major areas of equprnent use. Some eqJ@ent wlfl experience h such a case, the more than one environrrwnt during its normal use, e.g., equipment in spacecraft. reliabitii analysis should be segmented, namely, missile launch (ML) conditions during boost into and
returnfromo~
and space flight(SF) while

Table 3-2:
in orbft.
Envhomnental
Symbol
and Deacrlptlon
EqtJhratBnt
Environment Ground, Bengn ~ Symbol GB MIL-HDBK-217E, Notice 1 ~ symbol GB %S D-ription Nonmobile, temperature and humidity controlled environments readily accessitde to maintenance; includes laboratory instruments and test equipment, medical electronic equipment, businass and scientifc computer mmplexes, and missiles and support equipment in ground sibs.
Ground, Fixed
GF
Moderately amtrolied environments such as installation in permanent racks with adequate oooling air and possible installation m unheated buildings; includes permanent tnstattatton of air traffic control radar and communications facilities.
Ground, MoMle
GM
GM Mp
Equipment installed on wheeled or tradwd vehicles and equipment manually transported; includes ttiicai missile ground support equipment, mobile communication equipment, tactical fire direction systems, handheld =mmunications equipment, laser designations and range finders.
Naval, Shelterad
NS
NS SB
Includes shehered or bebw deck conditions on surface ships and equipmant installed in submarines.
Naval, Unsheltered
Nu
% NW NH
Unprotected surface ahipborne equipment exposed to weather conditions and equipment immersed in salt water. Includes sonar $@pment and equipment installed on hydrofoil vessels.
3-4
I
.4-..-. . . . .,
,.,
,.,
.,
..,..
. .. . . . .
. . .
!.
...
..,.
MIL-HDBK-217F
3.0
INTRODUCTION
Tabto 3-2:
Environmental
Symbol
and Deecrtptlon
(CXMWd)
E@valont
Environment
%E
Description symbol AK
Airborne, Inhabitsd,
tc
Am *IB
Typical conditbns in cargo compartments whbhcan beoaX@adby arlahcraw. Envlronmont axhmes d ~~U~, ~u~,sand vibration W. minimal.
thac130,c5, B!52andc141.
Examplas Inctuda bng mission akcraftsuchas
Thisoatagory aboappueata ~edaroasinbwu performance smaller aircraft such as the T38.
Airborne, Inhabited, Fighter
IF
IF IA
Same as NC but installed on high performance aircraft such as fighters and interceptors. Examples include the F15, F16, F1 11, F/A 18
and Al O aircraft.
Airborne, Uninhabited,
%C
Am +
%JB
Environmentally uncontdbd areas which oannot be rnhdited by an aircrww during flight. Environmental extrernos of pressure, tefnperature and shock maybe severe. Examples include uninhabited araas of bng
missiin ahwaft such as the C130, C5, B52 and

C141. This category aiso appJiis to uninhabited area of bwer performance smaller aircraft such as the T38.
Airborne, Uninhabited, Fighter
AUF
Same as NC but installed on high performanem aircraft such as f~htem and interceptors. Exarnplesincludethe F15, F16, F111 and AlO
aircraft.
Airborne, Rotary w-
ARvv
%/
Equipment installed on helicopters. Ap@h to mounted both internally and externally squipmentsuch as laser designators, fire mntrol systems, and communications squpment.
Space, Flight
SF
---
cmditions. Vehicle neither underpowered flight nor in atmosphorio reentry; includes satellites and shuttles.
APP=J
~mw9~~~
3-5
MIL-HDBK-217F
3.0 INTRODUCTION
Table
3-2:
Environmental
Symbol
and
Descrfptlon
(centd)
Environment
~E Symbol Missile, Flight
Equivabnt MIL+fDBK-217E, Mice 1 ~ Symbol
Description
% 4A
Conditions r.lated to poweredflightof air breathing missibs, cruise missiles, and missiles in unpowered free flight.
Miiile,
Launch
\ u=
Severe amditions relatwi to missile launch (air, ground and Sea), space Vshiob boost into orbit, and vehicle re+n~ and landing by par~e. Also applies to soI&l roclwt motor ww~bn POWW@ fhght, and torpedo and missile launch from submarines.
Cannon, Launch
CL
CL
Extremely severe conditions related to cannon launching of 155 mm. and 5 inch guided projectiles. Conditions apply to the projectile trom launch to target impact.
3.4.4 Part Failure Rate Models - Part failure rate models for microelectronic parts are significantly different fmm those for other parts and are presented entirely in Section 5.0. A ~pical example of the type of model used for most other part types is the folbwing one for discrete semiconductors:
~=~fiTfiA~R~S~C~Q~E
is the patt failure rate, is the base failure rate usually expressed by a model relating the influence of electrical and
temperature stresses on the part, and the other n factors modify the base failure rate for the category eppkath amf other parameters that affectthe paft reKMity. of environmental
me ZE and XQfaotors are used in most ali models and other x factom app~ only to SWC~~ ~dels.
applicability of z factors is Identified in each sectbn. The base failure rate (~) models are presented
The
in each part section along with identification of the
applicable model factors. Tables of calculated ~ values are also provided for use in manual
calculations.
The model equations can, of course, be incmporated into computer programs for machine processing. The tabulated values of ~ are cut off at the part ratings with regard to temperature and stress, hence, use of parts beyond these cut off points will
overstress tk pan. The use of the lb models in a ~mPuter
3-6
MIL-HDBK-217F .
3.0 INTRODUCTION
pmgrarn should take the part rating limits into account.
The ~
equations are
mathematically continuous
beyond the part ratings but such faiiure rate vaiues are invalii in the overstressed regions. and permanent drift failures (e.g., a resistor permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for motors whch show an increasing failure rate overtime. FaiJures associated with connection of parts into circuit asserrbiies are not imluded within the part faiiure rate models. Information on cxmnection reliabilii is provided in Sections 16 and 17.
Aii the part modeis imiude faiiure data from both cahstmphic
- The use of this prediction method requires the determinatbn of the 3.4.5 Thermal Aspects temperatures to which the parts are subjected. Sinoe parts reliability is sensftive to temperature, the thermal anatysis of any design shouid fairty accurately provide the ambient temperatures needed in using the part models. Of course, bwer temperatures produce better reliihty but aiso can pmc&ce hcreased penatties in terms of added toads on the environmental oontrol system, unless achkved through improved thenmal design of the equipment. The thermal analysis shouid be part of the design process and included in ail the trade-off studies covering equipment performance, reliability, weight, volume, environmental control systems, etc. References 17 and 34 listed in Appendix C may be used as guides in determining component temperatures.
3-7
[ ,,.,... . . I
I
,., ,.
,..
...
.,. ...! ,.. . .
MIL -HDBK-217F
4.0
RELIABILITY
ANALYSIS
EVALUATION
for evaluating a reliability predii report. Tabie 4-1 provides a ~ For completeness, the cttecfdist includes categories for refiabiiity modeling and albcatbn, which are sometimes deiivered as part of a predctibn report. it should be noted that the scope of any reliability analysis depends on the specific requirements called out in a statement-of-work (SOW) or system k not intended to change the soope of these requirements. speckatbn. The inclusion of this ckkiist
Tabl. Malor --- COncarns - ---. -- 4-1: Reliablllty
m
Anatysls
Checkltet
Commonts . . . ..-
MODELS Are allfunctional elements included in the raliabiihybbdc diagram /model? Are all modes of operation considered in the
nlti modd? Do the math model results show that the design achieves the reliabiiii requirement?
System design drawingddiagrarna must be rwiewed to be sure that the relkbilii modekfkgram qreoa with tho hardwn.
~ @OS, an~ae paths, degraded conditbns and redundant units must bedefinedandmodeted. Unit failure rates and redundancy aquations are used from the detailed paft predictions in the system math model (See MIL-STD-756, Reliability Predictbn and Modeiing).
ALLOCATION Are system reliability requirements allocated (suMivided) to useful levels?
Useful Ievets are defined as: equipment for sulxxmtractors, assemblies for sub-subcontractors, arouit boards for designers. Conservative values are needed to prevent reallocation at every desgn change.
Does the allocation process consider ;am~:;?ty, design flexibility, and safety m PREDICTION Does the sum of the parts equal the value of the module or unit?
Many predictbns neglect to include all the parts producing optimistic results (check for solder connections, connectors, circuit boards). Optimistic quality levels and favorable environmental cxmditions are often assumed causing optimistic resutts. Temperature is the biggest driver of part failure rates; bw temperature assumptions will cause optimistic results. Idontifioation is needed so that corrective actions for reliabitii improvement can be considered. Use of alternate failure rates, if deemed necessary, require submission of backup data to provide credence in the values. Each component type should be sampled and failure rates completely reconstructed for accuracy. Prediction methods for advanced technobgy parts should be oarefully evaluated for imp-on the module and system. I I
Are environmental ccmditmnsand part quality representative of the requirements? Are the circuit and part temperatures defined and do they represent the design?
Are equ~ment, assembly, subassembly and part reliability drivers identified? Are alternate (Non MIL-HDBK-217) failure rates highlighted along with the rationale for their use?
Is the level of detail for the part failure rate models sufficient to reconstruct the result? Aro critical components such as VHSIC, Monolithic Microwave Integrated Circuits (MMIC), Application Specific Integrated Circuits (ASIC) or Hybrids highlighted?
4-1
MIL-HDBK-217F
5.0
MICROCIRCUITS,
INTRODUCTION
This section presents failure rate prediction models for the following ten mapr classes of microelectronic devices:
Swis2rl
5.1 5.1 Monolithic Bipolar Digital and Linear Gate/LogicArray Devices Monolithic MOS Digital and Linear Gate/Logic Array Devices Monolithic Bipolar and MOS Digiial Microprocessor Devices Monolithic B~lar
5.1
5.2 5.3
and MOSMemoryDevices
and VLSI) CMOS Devioes (> 60K
Very High Speed Integrated Chcuit (VHSIC/VHSIC-Like Gates)

Monolithic GaAs Digital Devices
5.4 5.4
Monolithic GaAs MMIC Hybrid Microcircuits

Surface Acoustic Wave Devices
5.5
5.6
5.7
Magnetic Bubble Memories ASITL, DTL, ECL, CML,
In the title description of each monolithic device type, Bipolar represents all llL,
ALSITL, HTTL, Fl_ll, F, L~L, SITL, BiCMOS, LSITL, IIL, 13L and ISL devices, MOS represents all metal-oxide microcimuits, which includes NMOS, PMOS, CMOS and MNOS fabricated on various substrates such as sapphire, poiycrystaftine or single crystai siiicon. The hybrid model is structured to accommodate aii of the monolithic chip device types and various complex~ Ieveis. Monolithic memory complexity factors are expressed in the number of bits in accordance with JEDEC STD 21A. This standard, which is used by ail government and industry agencies that deal with microcircuit memories, states that memories of 1024 bits and greater shall be expressed as K bts, where 1K = 1024 bits. For example, a 16K memory has 16,364 bits, a 64K memory has 65,536 bits and a 1M merno~ has 1,048,576 bits. Exact nurrbers of bits are not used for memories of 1024 bits and greater. For devices having both linear and digital functions not covered by MIL-M-3651 O or MIL4-38535, use the iinear modei. Line drivers and iine receivers are considered iinear devices. For iinear devices not covered by MIL-M-3851 O or MiL-i-38535, use the transistor count from the schematic diagram of the devioe to determine circuit complexity. For digitai devices not covered by MIL-M-3851 O or MIL-I-38535, use the gate count as determined from the logic diagram. A J-K or R-S flip fbp is equivalent to 6 gates when used as part of an LSi circuit. For the putpose of this Handbook, a Oate is constierecf to be any one of the following functions; AND, OR, exciusive OR, NAND, NOR and inverter. When a bgic diagram is unavailable, use dev.ke transistor count to determine gate count using the folbwing expressions:
Bipolar CMOS Al! other MOS except CMOS
No. Gates = No. Transistors/3.0 No. Gafes = No. Transistors/4.O No. Gates = No. Transistors/3.O
5-1
MIL-HDBK-217F
5.0
MICROCIRCUKS,
INTRODUCTION
A detailed form of the Section 5.3 VHSIC/VHSIGLikemodel is inoluded as Appendix B to allow more detailed WleWfs to be performed. Reference 30 should be consulted for more information about this
model. Reference 32 should be consulted for more Informatbn about the models appeartngin Sections5.1,5.2, 5.4,5.5. and 5.6. Reference 13 should be consulted for additional information on Section s.7.
MIL-HDBK-217F
5.1
MICROCIRCUITS,
GATE/LOGJC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION 1. Bipolar Devices, Digital arxf Linear Gate/Logic Arrays 2. MOS Devices, Di@tal and Linear Gate/Logio Arrays ArTay (~) am 3. F*H PmgranwwMe Lx Programmable Array Logic (PAL) 4. Microprwessors
~=
(ClZT + C2Y@ ~
Fdlures/106 t+ours
Hgml,ar Di@al and Linear GafeA@c DighJ No. Gates 1 to 101 to 1,001 to 3,001 to 10,001 to 30,001 to 100 1,000 3,000 10,000 30,000 60,000 I [ c. .0025 .0050 .010 .020 .040 .080
Amy Die Cm@exity
Failure Rate-Cl PLA/PAL No. Gates c, .010 .021 .042
Linear No. Transkws 1 301 1,001 to to to 100 300 1,000 10,000
c.
.010
.020 .040 .060 201 1,001
up to 200
101 to
to 1,000 to 5,000
~ DQital No. Gates 1 101 1,001 3,001 10,001 30,001 to to to to to 100 1,000 3,000 10,000 30,000
D@al and Linear Gate/Logic Army Die CorqSexlty Failure Rate - Cl
c, .010 .020 .040 .080 .16 .29
Linear No. Transistors

ltol
c, .010 .020 .040 .060
PLNPAL No. Gates up to 500 501 to 1,000 2,001 to 5,000 5,001 to 20,000
c,
101 to
301
.00085
.0017 .0034 .0068
1,001
to to
3 1,0
10,0
to 60,000
q NOTE:
For CMOS gate counts above 60,000 use the V1-iSIC/VHSIC-Like
model in Section 5.3
Die Complexity Failure Rate - Cl

Bipolar No. Bits MOS
All Other Model Parameters Parameter Refer to
c,
c, .~4 .28
Section 5.8
Section 5.9 Section 5.10
Up to 8 Upto 16 up to 32
II
.060
.12
.24
.56
5-3
..
MIL-HDBK-217F
.
q
5.2
MICROCIRCUITS,
MEMORIES DESCFilPTION 1. Red ~ Memories (ROM) 2. ~armable Read Only Memorns (PROM) 3. lJ~ mPROMS (UVEPROM) 4. Flash; MNOS and Floating Gate ElectdcaBy bOkJdf3S both Erasable PROMS (EEPROM). fbating gate tunnel oxide (FLOTOX) and textured polysiliin type EEPROMS 5. Static Rancbm Access Mermles (SRAM) 6. ~ R~ /@cess Mwnories (DRAM) ~= (C1 %T + C2 %E + ~ ~ ~ FailumsH06 HOtJm
Die Complexity Faih.JmRate -Cl M PROM, uvEPROM, Memory Size, B (Bits) up to 16K 16K<Bs64K 64K<Bs256K 256K<Bs1M ROM .00065 .0013 .0026 .0052 z= .00085 .0017 .0034 .0068 DRAM .0013 .0025 .0050 .010 > SRAM
(MOS & BiMOS)
lar ROM, PROM .0094 .019 .038 .075
SRAM .0052 .011 .021 .042
.0078 .016 .031 .062
Al Factor for ~c Total No. of Programming Cycles Over EEPROM Life, C up to 100 100< CS2OO 200< C<500 500< CS1K 1K<CS3K 3K<CS7K 7K<CS15K 15K < CS20K 2oK<csi30K 30K < CS lOOK 100K < CS200K 200K<CS400K 400K < C s 500K 1. 2. Al =6.817
Cablatbn Textured-
Factor for kc I
Calculation Textured-Poly I o 1.1 2.3 A2
Flotox .00070 .0014 .0034 .0068 .020 .049 .10 .14 .20 .68 1.3 2.7 3.4 x10+(C)
Polp .0097 .014 .023 .033 .061 .14 .30 .30 .30 .30 .30 .30 .30
I Total No. of Programming Cycles Over EEPROM Ltfe. C Up to 300K 300K < C s 400K 400K < C s 500K AJl Other Mc Parameter XT C* fiE,
~c ~Qt XL
IelParametem
Refer to Section 5.8 Section 5.9 Section 5.10 Page 5-5
(EEPROMS only)
No underlying equation for TexturedPoly. ~c
= O
For all other devices
5-4
..
MIL-HDBK-217F
5.2
MICROCIRCUITS,
MEMORIES
w,
All Memory Devices Except Fbtox and Textured-Poly EEPROMS Fbtox and Textured Poty EEPROMS ~[ c= Al
~=o A*B* ~
61 +
1
5-6
ECC
Al B, A2 02 %Q Error Correction Code (ECC) Optkms: 1. No On-Chip ECC 2. On-ChP Hamming Code 3. Two-Needs-One Redundant Cell Approach
P-54 Page 5-6 A2=o ~=o Sectbn 5.10
P* Page 54 Page 5-6 Page 5-5 P* Seotion 5.10
~ECC
= 1.0
%ECC = ~.0 %ECC = .72 ~ECC = .66
~ECC = .72 ~ECC = .68
NOTES:
1.
See Reference 24 for modeling off-chip error detecton and correction schemes at the memory system level. If EEPROM type is unknown, assume Fbtox.
2. 3.
Error Correctbn Cde Optbns: Some EEPROM manufacturers have incorporated on-chip error correction chxwitry into their EEPROM devioes. This is represented by the on-chip hamming code entry. Other manufacturers have taken a redundant cell -~ which immporates an extra storage transistor in every memory ceil. mis is represented by the two-needs-cm redndant cell entry.
4.
The Al and
factors shown in Section 5.2 were devebped
based on an assumed
system life of 10,000 operating hours. For EEPROMS used h systems whh significantly bnger or shorter expected lifetimes the Al and ~ factors should be multiplied by: 10,000 System Lifetime Operating Hours
5-5
MIL-HDBK-217F
5.2 MICROCIRCUITS, MEMORIES t ~ Fa 1
co
x *
8 m
%6
===1
.. ,
,,
MIL-HDBK-217F
5.3
MICROCIRCUITS,
VHSICNHSIGLIKE
AND
VLSI
CMOS
DESCRIPTION CMOS greater than 60,000 gates ~ %@MFGfiPCD

+ ~pzEx@p~ + ~~~
Failurest106 HOUrS ANOther Model Parameters
Ok Base Falture Rate - ~D

I Part Type Logic and Custom me Army 60 0.16 0.24 *
Parameter %T %E~~ Package Type I Hefmetc
Refer to Section 5.8 Se@on 5.90 - Xm
Correction Factor
Paokage Type Manufaotwing QML or QPL Non QML or Non QPL Process
PT Nm&mettc
%FG .55 2.0
II
[ I I
DIP Pn Grid Amy CMp Carrier (Surface Mount

T@chnnlnnv\
1.0
2.2 4.7
1.3
2.9 6.1
Dle Complexity Correction Factor - ~D I Feature S&e (Mkmns) .80 1.00 1.25 i As.4 8.0 5.2 .4< As.7 14 8.9
A =
I
I [v
Die Ama (Cr#) .7< AsI.O 1.0< As2.O 19 38 I 1 13 25 I I I I 82
1 2.0< i I I A s 3.0 58 37
Total Scrbed Chip Die Area in cm2 58 :-asw;:bns)s)
-f+)
:i+-M
Die Area Conversion: cm2 = MIL2 + 1S5,000 Package Base FaUure Rate - ~p Ekctrical Overstress Faiture Rate - l~h~ BP VTH (ESD %SC@bility o1000 (VOttS))* EOS
Number of Pins 24 28 40 44 48 52 64 84 120 124 144 220 ksp NP = = .0022+ Nu~r ((1 .72X 10-5)
.0026 .0027 .0029

.0030 .0030 .0031 .0033 .0036 .0043 .0043 .0047 .0060 (NP))
.065
.053 .044 .029 .0027
/.00876
>1000-2000 >2000-4000 >400016000 > 16000

~OS - (-In (1 -.00057 exp(- .0002 Vw))
TH
q
= ESD Susceptibility (volts)
of Package Pins
Voltage ranges which will cause the pad to fail. If unknown, use O -1000 vofts.
UJCU7_n
Al
Q!
,.,
.-.
MIL-HDBK-217F
5.4
MICROCIRCUITS,
GaAs
MMIC
AND DIG~AL
DEVICES
DESCRIPTION Ga)iiim Arsenide Microwave Monolithic Integrated Citwit (GaIW MMIC) amt GaAs Digitai hltegrated Ci-ixhsUshg MESF~ Transistorsand Gold Based MetaJliion
Die Complexity FaiWe Rates - Cl complexity Elements)
.. Application MMIC Devices Low Noise & Low Power (S 100 mVV) Drtvar& High Rnuer(> 100 mw) Unknown %A
(No. f o
c,
4.5 7.2
1 to 100 101 to 1000 1. Cl
accounts for the following active transistors, diodes.
1.0 3.0 3.0
elements:
Digttal Devices All Digital Applications -: Die CompkIXRy Failure Rates - Cl Complexity (No. of Elements) 1 to 1000 1,001 to 10,000 1. Cl c, All Other Model Parameter XT C* nE, XL,
~Q
1.0 <
Parametem
Refer to Sectbn 5.8
25 51
aocounts tor the following aotive transistors, diodes.
elements:
5-8
I ?
.,.
....
...
MIL-HDBK-217F
5.5 DESCRIPTION Hybf@ MicrociruJits
MICROCIRCUITS,
HYBRIDS
~=[~Nc~l(l
Nc kc = =
+.2 XE)ICF~Iy
FaMureM06Hours
Number of Each Particular Conpnent Failure Rate of Each Particular Corqmnent
The general pmcechme for developing an overall hybrid faikJm rate )s to oalculde an individual failure fate for each component type used in the hybrid and then sum them. This summatbn is then modfied to axoun for the ovendl hybrid fumtiin (x#, suwning level (~), and matudty (~. ~ ~ ~ failure rate is a function of the active mmponent faiture modified by the environmental factor (i.e., (1 + .2 ~E) ). Ow th ~~ne~ ~ w~ in th fob~~ t8bk ar8 rnns~~ to ~nf~e 8@Wb~& ~
the overall failure rate of most hybrids. AU other cxxnponent types (e.g., m@stor& inductag et@ are considered to contribute lnslgnffkanttyto the overalt hybridfailure rate, and are assumed to have a failure
rate of zero. This simplification is valid for most hybrids; however, if the hybrid consists of mostiy passive components then a failure rate should be calculated for these devices. tf factorirm in othi?r comQonenf . types, assume ZQ = 1, ~ =1 and TA = Hybrid Case Temperature for these calculat b~s.
Determination
of& Mak~ These Asswptions L C2=0, XQ=l ,1= When Determining
Determine ~ for These co mponent Types Microcircuits
Handbook
Section
1, TJ as Determined from
= O (for VHSIC). from Section 6.14,
Section 5.12, ~P Discrete Semiconductors
= 1, TJ as Detemined
%E=l.
Capacitors
10
~=1,
TA
= Hybrid Case Temperature,
~E=l. NOTE: If maximum rated stress for a die is unknown, assume the same as for a discretely pdie of the same type. If the same dw has several ratings based on the discrete ~ type, assume the bwest rating. Power rating used sh6uld be based on case terrper~ure for discrete semiconductors. Chcuit Function Factor Circuit Type Digital
Vii, 10MHz<f<l f >1 G1-lz GHz
F
All Other Hybrfd Model Parameters I 1.0 1.2 2.6 5.0 21 1 ~LI ~Q, ~E
Refer to Section 5.10 I
Microwave,
Linear, f <10
MHz
Power
5-9
MIL-HDBK-217F
5.6
MICROCIRCUITS,
SAW DEVICES
DESCRIPTION Surface Acoustic Wave Devices
$ = 2.1
Quaiity Factor - ~ Screening Level
. XQ
IQ %E Fai)ures/106 Hours
Environmental
Factor - xc L %E .5 2.0 4.0 I 4.0 6.0 4.0 5.0 5.0 8.0 8.0 .50 5.0 12 220
Environment %3 %
10TerTpf&mre Cycleal to (+5%

+125C) with end point electrical tests at temperature extremes.
None beyond bestcwmmwkat practices.
.10 II
% 1.0 his Nu AC IF %c UF RW SF MF ML CL
5-1o
1 I
El
.-
MIL-HDBK-217F
5.7
MICROCIRCUITS,
MAGNETIC
BUBBLE
MEMORIES
The magnetic bubble memory device in its present form is a noMwnWic folbwing two mapr structural segments: 1.
assembty consisting of the
A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor hops), and required control and detection elements (e.g., generators, various gates and detectors).
A magnetic structure to provide controlled magnetic fields consisting of permanent coils, and a housing. . magnets,
2.
These two structural segments of the device are intemcmnected by a mechanical substrate and lead frame. The interconnect substrate in the present technology is normally a printed cirwit bead. tt shoukf be noted that this model does not inohde external suppmt microelectronic devices reqJired for magnetk bubble memory operation. The model is based on Reference 33. The general form of the fakwe rate model is: ~= where: k, = Failure Rate of the Control and Detection Structure ~1 + ~ FaiJurest106 Hours
~ = Failure Rate of the Memory Storage Area
ctips per Package - NR Nc = Number of Bubble Chips per Packaged Device
Device Complexity Failure Rates for Control and Detectbn Stmcture - Cl, and C,l
c,, =
C2, N, =
.00095( N1)40 .0001 (N1)226 Number of Dissipative Elements on a Chip (gates, detectors, generators, etc.), N, $1000
Temperature -Ea
X
Factor - XT 1 1
~T=(.l)@xp [ 8.63 Use: % Ea TJ = = =
10-5
TJ +273-=
)1
.8 to Caloulate ?tTl .55 to Calotdate *T2 Junction Temperature 25 STJS175 (C),
TJ
TCASE + IOC
MIL-HDBK-217F
5.7
MICROCIRCUIT,
MAGNETIC
BUBBLE
MEMORIES
Write Duty Cycle Factor - ~
Device Complexity Failure Rates for Memory Storage Sttucture -Cl ~ and C99
%2
Zw =
.00007(h@3
.00001 (N2)3 Number of Bits, N2s 9 x 106
1 Avg. Device Data Rate Mfg. Max. Rated Data Rate ~, C22 N2
s=
D= R/w=
No. of Reads
per Write
NOTE: For seed-bubble generators, divide ~ by 4, or use 1, whkhever is greater.
AJlOther Model Parameters Parameter Section
C5
5.9 5.10
D=
Avg. Device Data Rate Mfg. Max. Rated Data Rate
~,
5-12
I &
MIL+IDBK-217F
S.8 MICROCIRCUITS, TABLE FOR ALL
XT
-18
-1!! .
1
I
5-13
_z...
.,. f
,!
.-.
..!-..
MIL-HDBK-217F
I
I
I
5.9
MICROCIRCUITS,
C2 TABLE
FOR
ALL -
Package Failure Rate for all Mhocircuits

. ~. Fbnnetb . w% w/Solder or Weld S@ Pin Grid Array (PGA)l, SMT (Leaded and Nonkmded) .00092 .0013 .0019 .0026 .0034 .0041 .0048 .0056 .0064 .0079 .0087 .010 .013 .015 .025 .032 .053 .076 .097 .00047 .00073 .0013 .0021 .0029 .0038 .0048 .0059 .0071 .0096 .011 .014 .020 .024 .048 .
xp
C2
Number of Functmnal Pins, Np
Dlf% ti Sea?
Gtass .
Fk@adcs wtth Axiaf Leads on 50 Mil Centers3
Cans4
Nonhermetic: DIPs, m SMT (Leaded and Nonleaded)5
3 4 6 8 10 12 14 16 18 22 24 28 36 40 :: 128 180 224
.00022 .00037 .00078 .0013 .0020 .0028 .0037 .0047 .0058 .0083 .0098
.00027 .00049 .0011 .0020 .0031 .0044 .0060 .0079
.0012 .0016 .0025 .0034 .0043 .0053 .0062 .0072 .0082 .010 .011 .013 .017 .019 .032 .041 .068 .098 .12
1.
3.
c2=2.8
C2 = 3.0
x 10+
(f$J .m
.= 1.08
2.
4.
c~ = 9.0 x 10-5 (N&151

C2 = 3.0 x 10-5 (N~2.01
x 10-5 (N~l
5.
C2 = 3.6
X 10+
(I$J
NOTES: 1. 2.
SMT:
DIP:
Surface Mount Technology Dual In-Line Package
3. 4.
If DIP Seal type is unknown, assume glass The package failure rate (C2) aocounts for failures associated only with the package itsetf. Failures associated with mounting the package Section 16, Interconnection Assemblies.
to a circuit board are accounted for in
5-14
..=
MIL-HDBK-217F
I
5.1O Envinmment Factor - ~
MICFIOCJRCUITS,
%E,~L
ANDxO
TABLES
FOR
ALL
Quality Faotors - ~
%E
Environment % % % NS N AC %F
Uc *UF ARW
Descrf@on s~ 1:
. .
.50 2.0 4.0 4.0 6.0 4.0 5.0 5.0 8.0 8.0 .50 5.0 12 220 Learning Factor - XL 2. 7CI 2.0 1.8 1.5 3. 1. Procured in full accordance with MIL-M-3851 O,class B requirements. Procured m fut!accordance with MIL-I-38535, (Class Q).
Hybrids: Procured to Class B requirements (QualityLevel
Procured in fufl accordance with MIL-M-38!H O,Ciass S
requirements. 2. Procuraf in full accordance with MlL-+=3853smd ~a B lherwo (Cfaae u). Hybrids: (Procured m Cfaaa s requirements (Qualily L@vOl K) of MIL-H~. .25
3.
SF
MF
ML c1
1.0
Years in Production, Y s .1 .5 1.0 1.5
1-f) f MIL-H-3$534. o
*
1.2
Fully compliant with all requirements of paragraph 1.2.1 d MIL-STD-883 and procured to a MIL drmving, DESC drawing or dher government approved documentation. (Does not include hybrids). For hybrids use custom screening section below.
XL=
.01 e)(p(s.ss - .35Y)
Y = Years generic cfevice type has been in production
2.0
5-15
T**
& --
b--h
-a--s
-d.-
..1
4 ---
.,.
5.10 Group 1
.,.
,, ..+....
.. . .
MIL-HDBK-217F
MICROCIRCUITS,
%E, %L AND XQ
TABLES
FOR
ALL
CdcUlation for Custom Screening Programs Poinf Va)uatkm MlL-STD-& Scmermeat (Note 3) TM 10IO(Ternperature Cycle, Cond BMinirmsm)and TM 2001 (Constant Acceleratbn, Cord B Minimum) and W 5004 (or 5008
for Hybrids) (Finaf Electrkals @Te~E%trenws) and TM 1014 (Seal Test, Cond ~ B, or C) and TM 2009 (External Visual) TM 1O1O (Terrqmature Cycle, Cond B Minimum) or TM 2001 (Constant Acceleration, Cond B Minimum) TM 5004 (or 5008 for Hytxlds) (Fhal EkOtca& @ Terrp Extremes) and TM 1014 (Seal Test, Cond A, B, orC) and TM 2009 (External visual) Pre-Bum in Electrkals TM 1015 (Bum-in B-LeveVS-Level) and TM 5004 (or 5008 for (Post Burn-in ElectdcaJs @ Te ~ Extremes)
Th42020Pirld(PaRi0fe TM 5004 fmpaothJ0ie0 ~)
Quality Factors (centcf): ~
50
2*
37
30 36
11 11
(B Level) (S Level)
4* 5
(or 5008 for Hybrids)
(Final Electricats @ Te~rature
(Note 1)
Extremes) 6 7* 8 TM 2010/17 (internal Visual) 7 7 (Note 2)
TM 1014 (Seal Test, Cond A, B, or C) TM 2012
(Radiography)
7 7
1
1
9
10 11
ZQ =2+
TM2009 (ExternalVisual)
TM 5007/5013 TM 2023 (GaAs) (Wafer Acceptance)
Bond Pull)
(Note 2)
(Non-Destructive 87
Z Point
Valuations PARTS.
q NOT APPROPRIATE
NOTES: 1. 2. 3. 4. 5.
FOR PIJWTIC
Point valuation only assigned if used independent of Grwps 1, 2 or 3. Point valuatbn onty assigned if used independent of Groups 1 or 2. Sequencing of tests within groups 1, 2 and 3 must be followed. TM refers to the MIL-STD-883 Test Method. Nonhermetk pafis should be used onty in controlled environments (i.e., GB and other temperaturelhumldtty controlled environments).
EXAMPLES: 1.
7 -. Mfg. performs Mfg. performs
Group 1 test and Class B bum-in:

infernal visual test,
~Q
2 +_
87
= 3.1
~Q =
seal test and final electrical test:
2+~ 10
87
= 5.5
Other Commercial or Unknown Screening Levels
fiQ=
5-16
.___ .
., .,.
MIL-HDBK-217F
5.11
h81CROClRCU?TS, 7.s DETERMINATION,
(ALL
EXCEPT
HYBRIDS]
Ideally, device case temperatures should be determined from a detailed thermal analysis of the wmm. NV* @wtion temperature is then calculated with the fofbwing relationship:
.. Tc +
TJ .
OKP
TJ Tc
= =
Worst Case Ju~ion
Tempemture
~C). w the Wlowing default tatlb.
Case Temperature (oC). If not avaiM#e,
Default Case Tempemture
(T~
for all Environments
TC (C)
35
45
50
60
60
75
75
60
I 35
50
60
45
(3JC =
Junction-toese
thermal resistance (CAwtt) for a device soldered into a printed circuit
board. If OK is not available, use a Vabe contained in a specification for the closest
equivalentdevke or use the following tabJe.
Die Area >14,400 Package Type (ceramic only)

Dual-in-Lm
m~
ew
Die Areas
14,400 rni?
(w
8JC (~
11
28 22 20 20 70
Flat Package Chip Carner

Pin Grid Array
10
10
10
Can
The maximum power dmtion
realized in a systemappficatiin. If the applied power is not available, use the maxknum power dissipationfrom the specificationfor the closest equivalent device.
MIL-HDBK-217F
5.12
MICROCIRCUITS,
T-l
DETERMINATION,
(FOR
HYBRIDS)
This sectbn descrfbes a method for estimating junction temperature
(TJ) for integrated circuit dke
mounted inahybrkfpackage.
A~k~~mti~timormrew-e~-tiW consists of active and passive chips with thick orthin

in turn may have multiple layers of metallization and view of a hybrid with a single multi-layered materials with different thermal
within a sealed package. Each substrate assetity film metallization mounted on the substrate, whii
dielectric on the surface. substrate. The
Figure 5-1 is a cross-sectional
layers within the hybrid are made The table folbwlng
up of various
characteristics.
Figure 5-1 provkles a llst of commonly used hybrid materials with
typical thicknesses and comesponding thermal conductivtties (K). If the hybrid internal structure cannot be determined, use the following default values for the temperature 1Oc; transistors, 25%;
diodes, 20W.
rise from case to junction: miomdrculs,
kalJrm
are at Tc.
CHIP (A) LID CHIP ATJACH (B) . \~ I
INSULATING LAYER (C) m SUBSTRATE (D) MATERIAL THICKNESS, L i EPOXY (E) CASE (F)
PACKAGE LEAD
Figure 5-1:
Cross-sectional
View
of a Hybrtd with a Single
Multl-Layered
Substrate
5-18
MIL-HDBK-217F
5.12
MICROCIRCUITS, Tvkal
T-l
DETERMINATION,
(FOR
HYBRIDS)
Hvbrid Characterktii Conductivity, Ki W/in* . () Win 2.20 .76 6.9 1.3 .0060 .15 .66
.64
Material
Typical U!wge
Typkal Thickness, + (in.) 0.010 0.0070 0.0001
Feature From Figure 5-1 A A B B/E BIE B c

D
IL Ki ()()
( in2 oC/W .0045 .0092 .000014 .0023 .58 .023 .0045

.039
Silicon
Chip Device chip Devbe
Au Eutectic Solder Epoxy (Dielectric) Epoxy (Conductive) Thck Film Dielectric

Alumina
Chip Attach Chip/Substrate Chip/Substrate Chii Attach Gl= Insubthg

MHP Layer
Attach Attach
0.0030 0.0035 0.0035 0.0030

0.025
Substrate,
Beryllium Oxide Kovar

AJuminum Copper NOTE: MHP:
Substrate, Case, MHP

Case, Case, MHP PHP
PHP
0.025 0.020
0.020 0.020
D F
F F
6.6
.42 4.6 9.9
.0038
.048 .0043 .0020
Muftichip Hybrid Package, PHP: Power Hybrid Package
(Pwc > 2W, TypicaUy)
;1(*)(i)
em= =
A
n Ki Li A
= z = =
Number of Material Layefs Thermal Conductivity of ith Material Thiiness W/in* ~ () (User Provided or Fmm Table)
of im Material (in) (User Provided or From Table)
Die Area (inz). If Die Area cannot be readity determined, estimate as follows: A = [ .00278 (No. of DB Active Wire Terminals) + .041#
Estimate TJ
as Folk)ws:
TJ = Tc + .9 (e~ (p~
Tc eJ~ Pf)
Hybrid
Case
Temperature
(C). If unknown, use the Tc Defautt Table shown in Section 5.11.
= Junction-to-Case =
Thermal Resistance (C/W) (As determined above)
Die Power Dissipation (W)
5-19
MIL-HDBK-217F
5.13
MICROCIRC CMOS
UIT&
EXAMPLES
Example 1: Given:
Dlgftal Gate Array
A CMOS digitaltiming~ (4048) in an ahborne inhabitedcargo applkxdbn, case temperature 4YC, 75mW power deefpatim The device is pmwrad with normal marndacturetsscreening consisting of terrperature oycflng, oomtant aooeleratbn, electrical testing, seal test and external visual Owpectkm, in the seqMnce given. The oorrponent manufacturer also performs a B-1evel bum-in folbwed by electrical testing. AU screens and tests are performed to the applicable MILSTD-883 screening method. The package is a 24 pin oeramic DIP with a glass seal. The device has been manufactured for severaf years and has 1000 transistors.
Section 5.1
c1 XT
= =
.020 .29
1000 Transistor
-250
Gates, MOS Cl Table, Digital Column
Determ\ne TJ from Sectbn 5.11 TJ = 48W + (28@W)(.075w) = 50W Determine ~T from Section 5.8, Digital MOS Column.
c~
?tE
=
= =
.011
4.0 3.1
7CQ
Seotion 5.10 Group 1 Tests Group 3 Tests (Blevel)

TOTAL
50 Points 80 Points
XL
Section 5.10 ~= [ (.020)(.29) + (.011) (4)] (3.1)(1)= .15 Failure/106 l-lows
Example Given:
2:
EEPROM Flotox EEPROM that is expected to have a TJ of 80C and experience 10,000
A 128K
readhmite cycles over the life of the system. The part is procured to all requirements of Paragraph 1.2.1, MIL-STD-883, Class B screenin level requirements and has been in in a 26 pin D7 P with a glass seal and will be used In an productbn for three years. tt b packagd airborne uninhabited oargo application. ~=(ClXT+C2YCE+~)nnL Sectbn 5.2
c1 XT C2
= = =
.0034 3.8 .014
MIL-HDBK-217F
5.13
~E
ICQ
MICROCIRCUITS,
EXAMPLES
=
=
5.0 2.0 1.0 .38
Section 5.10 Section 5.10 Section 5.10 Section 5.2: A2B* %[ ~ ~ 81 .3.8 =AIB1+~~~ = f32 = O for Fiotox s15KEntry (Use Equation 1 at bottom of B1 and ~ Tabie)
XL b c=
No ECC, %ECC = 1
A,=.l,7Ksc
(
~~
= 1 B, = (-1)(3.8) = .38
I I
~=
[ (.0034)(3.8)
+ (.014)(5.0)+
.38] (2.0)(1)=
.93 Failures/106
Hours
Example 3:
Given:
GaAs MMIC
A MA4GM212
Single Pole Double Throw Switch, DC -12 GHz, 4 transistors, 4 inductors, 8 resistors, maximum Input PD = 30 ~, 16 pin hermetio flatpack, maxirrum TCH = 14WC m a
ground benign environment. rne part has been manufactured for 1 year and is screened to Paragraph 1.2.1 of MIL-STD-883, Class B equivalent soreen. Seotion 5.4
c1
4.5 .061 3.0

.0047
Section 5.4, MMIC Table, 4 Active Elements (See Footnote to Tabie) Section 5.8, TJ = TCH = 145C
Section 5.4, UrhOwn Application
Section 5.9 Section 5.10 Section 5.10 Section 5.10
%E XL
= =
.50 1.5 2.0
7FQ
~=
[(4.5)( .061) (3.o) + (.0047)(.5)]
(1.5)(2.0)
= 2.5 Failures/106
Hours
NOTE:
The passive elements are assumed to contribute negligibly to the overall device failure rate. Hybrid
Example 4: Given:
A linear muttichip hybrid driver in a hermetically sealed Kovar package. The substrate is aiumina there are two thi@ film dielectric layers. The die and substrate attach materials are conductive epoxy and soider, respectively. The application environment is navai unsheltered, 65C case temperature and the device has been in production for over two years. The device is
and
5-21
MIL-HDBK-217F
5.13
MICROCJRCUJTS,
EXAMPLES
with Table Vlll, Class B requirements.
screened to MIL-STD-883, Method 5008, in accmkwxe The hybrid contahw the followhg components:
Active Components: 112222 17 -
LMl 06 Bipolar Co~rator-er Die (13 Transistors) LM741A Bipolar Operational Arnpliir Die (24 Transistor)
S NPN Transistor Si PNP Tmnsistor

Si General Purpose Diodes Cerwlb c~ Capacitors Thick FItm Resistors + -~E) %F ~ ~ Sectbn 5.5
Passive Components:
1.
Estimate Active Device Junction Terrperatures If limited informationis available on the specific hybtid materials and construction characteristics the defautt case-to-junction temperature rises shown in the introduction to Section 5.12 can be used. When detailed information becmmes available the following Section 5.12 procedure shoukf be used to determine the junction-to-case (tlJc) thermal resistance and TJ vatues for each component.
,,c
w
A Layer
(Equatbn
1)
Fgure 5-1 Feature
~ ()()
Ki .0045 .023 (2)(.0045) = .009 .039 .0023
Li
in2 OC/W Silicon Chip Conductive Epoxy A B c D E F
Two Dielectric Layers Alumina Substrate Solder Substrate Attachment Kovar Case
Die Area= [ .00278 (No. Die Active Wire Terminals) + .0417J2 Tc + OJC D (Equation 3)
(Equation 2)
TJ =
5-22
MIL-HDBK-217F
5.13
MICROCIRCUITS,
EXAMPLES
LM 106 No. of Pins I Power Dissipation, pD (W) Area of Chpjin.2) e~ (w .33 .0041 30.8 8 I
LM741A 14 I .35 .0065 19.4
Si NPN 3 .6 .0025 50.3
s
3
PNP
lSi 2
Diode
Source Vendor Spec. Sheet CircaJitAnalysis Ey. 2 Above
.6
.0025
50.3 95
II
56.3 89
.42
.0022
Equ. 1 Above Ew. 3 Above
J (~)
75
72
95
2.
Calculate Failure Rates for Each Corrqmnent: A) LM106 DM, 13 Transistors (from Vendor Spec. Sheet)
~=[c,q+c~Yc~l~Qq
Because P = = B) C2 = O; Cl XT
~Q XL
Section 5.1
~T:
s-h
5.8;
~Q,
ZL
Default tO 1.0
(.01)(3.8)(1)(1)
= .038 Failures/106
Hours
LM741 Die, 23 Transistors. =
Use Same Procedure as Above. = .031 Failures/106 Hours = .6,
Cl XT Z* XL = (.01)(3.1)(1)(1)
c) Silicon NPhl Transistor, Rated Power= 5W (From Vendor Spec. Sheet), Vc#VCEO
Linear Application ~ = = = D)
%PAR%KQE
s8CtiOn 6.3; ZQ, ~E Defautt to 1.0
(.00074)(3.9)(1
.5)(1 .8)(.29) (l)(1)
Silicon PNP Transistor, Same as C. .0023 Failures/106 Hours Vottage Stress= 60%, Metallurgically Bonded
E)
Silicon General Purpose Diode (Anabg), Construction. %T%~nQ% (.0038)(6.3)(.29)(1)(1)(1)
Section 6.1; nQ, XE Default to 1.0
5-23
,.
.. . .
MIL-HDBK-217F
[
5.13
MICROCIRCUITS,
EXAMPLES
F) Ceramic ChipCapacitor, Voltage Stress= 50%., A CASE for the Hybrid, 1340 pF, 125C Rated
I
Tenp Section 10.1 1; xQ, fiE Default to 1.0
= = =
%%V%)E (.0028)(1.4)(1)(1) .0039 Faitures/106 Hours
G)
Thiok Film Resistors, per kwtructbns in Section 5.5, the contribution of these devices is considered insiinifiint relative to the overall hybrid failure rate and they maybe ignored.
[XbJc~c](l+2@ItF~q
6.0 5.8 1
1 [ (1)(.038)+ + (2)(.0069) 1.3 Failures/l (1)(.031)+ + (2)(.0039) 06 Hours

Section (2) (.0023)+ 5.10
(2) (.0023) (5.8) (1)(1)
](1 + .2(6.0))
5-24
f ... .
. . . . . ..
. .
...
. .
.. .. .-
..!.
MIL-HDBK-217F
6.0
DISCRETE
SEMICONDUCTORS,
INTRODUCTION
The semiconductor tmnsistor, dbde and opto-electronic devke sections present the faWe rates on cmstwtbn. An mafytbd -I of the talbre rate is also presented for each the basis ofdevketypeand devkes require different failure rate devke category. The various types of dkcrete semkmductor models that vary to some degree. The models apply to single devices unless otherwise noted. For mh**v-rn as@k_t~~ti h~ti5.5*Mb Md. The applicable MIL specification for transistors, and optoelectronk quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500. The t~p9mtWt3 faCtOr (%T) is based on the devke jumtbn devices is MIL-S-19500. The
temperature.
Junctbn
temperature
should be oomputed based on worse case power (or maxhmm power c!ksipatbn) and the device junction to ease thermal resktanoe. Determinatbn of junction temperatures is explained in Section 6.14. I
I
Refererwe section.
28 should be consulted for further detailed information on the mode!s appearing
in this
6-1
MIL-HDBK-217F
I
6.1
DIODES,
LOW
FREQUENCY DESCRIPTION @ Frecpxmqr D-s: General Putpse Analog, Switch~ Fast Rewvery, f%wer RecWer, Tmsient S~r, Current Regulator, Vol@e Regulator, Voltage Reference
SPECIFICATION MlL-S-l 9500
Lp =
&##czQzE
Failures/l
OG
Hours
Factor - q
Base Failure Rate - & Diode Type/Appiicatbn General PuqxM Analog switching Power Redfiir, Fast Recovery Power Rectifier/Schottky Power Diode Power Rectifier with HigiI Voltage Stacks Transient Suppressor/Vanstor Current Reguiator Voltage Regulator and Voltage Reference (Avaianche and Zener) Terrperature Factor - XT (General Purpose Analog, Switching, Fast Recovery, Poul r Rectifier, TI dent Su-pgm isor) XT TJ ~C) XT TJ (C) 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 1.0 1.2 1.4 1.6 1.9 2.2 2.6 3.0 3.4 3.9 4.4 5.0 5.7 6.4 7.2 8.0 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 9.0 10 11 12 14 15 16 18 20 21 23 25 28 30 32 ~ .0038 .0010 .069 .0030 .0050/ Junction .0013 .0034 .0020
I i
Temperature
(VOitag. Regulator, Voitqo Rdormce, h cunUWRncddYW) .- ---- . ... . -~---. # %T TJ (C) J (=) 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 1.0 1.1 1.2 1.4 1.5 1.6 1.8 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
%T =
exp
-1925 ((
1 TJ +273-=
1 ))
TJ
JunctionTemperature (oC)
XT =
exp -3091
((
1 1 TJ + 273 -Z& ))
TJ -
JunctionTemperature (C)
6-2
+.
.,
MIL-HDBK-217F
6.1
DIODES,
LOW
FREQUENCY
Electrical Stress Factor - ZS Stress Transient Suppressor, Voltage Regulator, Voltage Reference, Current Regulator I 7CS Quality JANTXV JANTX 1.0 JAN All Others: v~ s .30 .3 c v~ s .40 .4< Vs s .50 .5<v#60 .6< Vs s .70 .7< V~ s .80 .8< V~ s .90 .9<v#. oo Lower 0.054 0.11 0.19 0.29 0.42 0.58 0.77 1.0 Plastic
Quality Factor - X(
tcQ
0.7 1.0 2.4 5.5 8.0
Environment Factor - ZE Environment GB GF 7tE 1.0 6.0 9.0 9.0 19 13 29 20 43 24 .50 14 32 320
For All Except Transient Suppressor, Voltage Regulator, Voltage Reference, or Current Regulator 7CS= .054 (Vs s .3) 1)
% N~ Nu Ic IF *UC UF RW SF MF ML
~s = v~2.43
(.3 < v+
Voltage Applied ~~ = Voltage Stress Ratio = Voltage Rated Voltage is Diode Reverse Voltage
Contact Construction Factor - xc Contact Construction Metallurgically Bonded I Non-Metallurgically Bonded and Spring Loaded Contacts CL I I@ 1.O
2.0
6-3
MIL-I+DBK-217F
6.2
DIODES,
HIGH FREQUENCY
(MICROWAVE,
RF)
SPECIFICATION MlL-S-l 9500
DESCRIPTION Si IMPA7T; Buk Effect, Gunn; Tunnel, Back; Mixer, Detector, PIN, Schottky; Varactor, Step Recovery
Failures/l 06 Hours
Base Failure Rate - ~ Dbde Type Si lMPAIT (s 35 GHz) Gunn/Bulk Effect Tunnel and Bd (including Mixers, Detectors) PIN Schottky Barrier (including Detectors) and Point Contact (200 MHzs Frequenqs 35 GHz) Vamctor and Step Recovery h
TJ
Tenqxmtum
Factor- %T
~)
1.0 1.3 1.8 2.3 3.0 3.9 5.0 6.4 8.1
10 13 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 42 50
.22 .18 .0023 .0081 .027 .0025
Temperature Factor - q TJ (C) 25 30 35 40 45 50 55 60

65 70
25 30 35 40 45 50 55 60 65 70 75 80 85 z 100
16 19
24 29 35
(All Types XT 1.0 1.1 1.3 1.4 1.6 1.7 1.9

2.1 2.3
Excq)t
IMPA7T) TJ (oC) 105 110 115 120 125 130 135

140 145
84 99 120 140 160 180 210 250 280 320 370
4.4 4.8 5.1 5.5 5.9 6.3 6.7

7.1 7.6
T TJ
= =
exp -5260
((
1 ))
TJ + 273 -Zz
75 80
85 90 1:
2.5 2.8 3.0

3.3 3.5 3.8
150 155 160

165 170 175
8.0 8.5
9.0 9.5 10 11
Application Diodes Application
Factor - fiA I ~A .50 2.5 1.0
4.1
Varactor, Voltage Control Varactor, Mu?tip!ier
XT =
exp -2100 ((
1 TJ +273-~
1 ))
All Other Diodes
TJ =
6-4
.- .-.
,,.
,.
MI-HDBK-217F
6.2
DIODES,
HIGH
FREQUENCY
(MICROWAVE,
RF)
Power
Rating Factor - XR Quaiity
Rated Power, Pr (Watts)

PIN Diodes
Quality Factor - ~ (Scha ky)

%
p~ < 10 10 < Pr s IOO<Pr 1000 <Pr
.50
JANTXV JANTX JAN Lower
.50 1.0
100
S3000
1.3 2.0 2.4
Sl~
1.8
2.5
All Other Diodes
1.0
Plastic
Pthl Diodes
All Other Diodes
Iqq = .326 k(Pr) -.25 XR = 1 .0
For high frequency part classes notspecified to
MlL-S-l 9500 equipmentqualityclasses are defined ae devices meeting ths Same requirementsas MlL-S-l 9500.
Quaiity Factor - nQ
(All Ty pas Except Scl
Environment Factor - z= Environment GB .50

1.0
~E
Quality JANTXV JANTX JAN Lower Plastic
1.0
2.0 5.0
4.0 11
t
I
GF % Ns Nu Ac IF *UC
5.0 25 50
4.0 5.0
7.0
For high frequency part classes not spedfied to Ml L-S-l 9500 equipmentqualhyclassesare defined as devbes meeting the same raqulrementsas MlL-S-l 9500.
UF RW .. SF MF ML CL
12 16 .50 9.0 24 250
6-5
MIL-HDBK-217F
q
6.3
TRANSISTORS,
LOW
FREQUENCY,
BIPOLAR DESCRIPTION NPN (Frequency< PNP (Frequency<
SPECIFICATION MIL-S-19500
200 MHz) 200 MHz)
Ap =
%?
AXR%ZQXE
Failures/l
06 I-loufs Application Factor - %A
Type NPN and PNP
h .00074
Application Linear Ampliiicatiorl Switching
%A 1.5 .70
TJ
(*)
XT
T J (C) 105 110 115 120 125
%T
Power Rating Factor - ZR. . Rated Power (Pr, W~S) Pr~ .1 Pr = .5 Pr =1.0
Pr = 5.0 Pr = 10.0
?tR
25 30 35 40 45 50
1.0 1.1 1.3 1.4 1.6 1.7
4.5 4.8 5.2 5.6 5.9
.43 .77 1.0 1.8 2.3 4.3 5.5
55 60 % 75 80 E 95 100
;:: 5:: 2.8 3.0 ::: 3.9 4.2
130 135 140 145 150 155 160 165 170 175
6.3 6.8 7.2 7.7 8.1 8.6 9.1 9.7 10 11
Pr = 50.0 P~ = 100.0 Pr -500.0
10 I
XT =
exp -2114 ((
1 1 TJ + 273 -=
))
TJ =
Junclbn Temperature (C)
%-. * ~ - (Pr).37
Rated Powers .lW Rated Power >.1 W
6-6
.l@
MIL-HDBK-217F
6.3
TRANSISTORS,
LOW
FREQUENCY,
BIPOLAR
Voltage Applied vCE/Rabd o<v .3<v~s.4 .4<v .5c .6< .7<v .8< .9< @.5 V~S.6 V#.7 @.0 V#.9 v~ s 1.0 #.3
Stress Factor - YCS VCEO ~~ .11 .16 .21 .29 .39 .54 .73 1.0 ~~
Erwironment Factor - ~F Environment GB GF % Ns N AC IF AM %E 1.0 6.0 9.0 9.0 19 13 29 20 43 24 .50 14 32 320
% v~
,045 exp (3.1(vS))
(o<v#l.o)
UF RW
Applied VCE / Rated VGEO Voltage, Collector to Emitter Voltage, Colleotor to Emitter, Base Open
SF MF ML CL
VCE
CEO
=
-
Quality Factor - ZQ Quality JANTXV JANTX JAN Lower Plastic I 7c~ .70 1.0
2.4
5.5 8.0
6-7
MIL-HDBK-217F
6.4
TRANSISTORS,
LOW
FREQUENCY,
SI
FET
DESCRIPTl ON N-Channel and P-Channel Si FET (Frequencys
400 MHz)
Ap = kb7cT7cA7tQ7cE Failures/l 06 Hours

q
Application Factor - ~A % Application (Pr, Rated Output Power) Linear Amplifkxtion (Pr < W) small S@rlal Switching .70
Transistor Type
MOSFET JFET
I :::5 I
Temperature Factor - n~ *T 1.0
1.1 1.2
T ~ (C) 25
E 40 45 50 55 60 65 70 75 80 85 90 95 100 * nT = exp (( TJ =
TJ (C) 105
110 115 120 125 130 135 140 145 150 155 160 165 170 175 A 1 TJ + 273 1 -izii )) Temperature (C)
XT
Power FETs (Non-linear, Pr z 2< Pr<5W
2W)
1.4
1.5 1.6 ;:: 2.1 2.3 2.5 2.7 u 3.4 3.7
::; 4.5 4.8 5.1 5.4 5.7 6,0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
2.0 4.0 8.0 10
5<Pr<~W 50 s Pr < 250W Pr > 25OW
Environment Factor - x=
Environment GB GF
xc 1.0 6.0 9.0 9.0 19 13 29 20 43

24
- 1925
GM NS 1 Nu Alc
Junction
Quality Factor - ~ Ouality

JANTXV JANTX JAN Lower Plastic
7CQ
.70 1.0 2.4 5.5 8.0
IF *UC *UF *RW

SF
.50
14
MF ML CL
32 320
b-U
1=-IO
=1
MIL-HDBK-217F
6.5 SPECIFICATION MIL-S-19500
TRANSISTORS,
UNLIUNCTION
DESCRIPTION Unijunction Transistors
Failures/l Lp = kb7cT7TQ7cE Base Failure Rate - ~
OG Hours Quality Factor - ~ Quality

%Q
All Unijuntilon I
.0083 I
JANTXV JANTX JAN
.70 1.0 2.4 5.5 8.0
T ~ (C) ~T TJ (C) XT
Lower Plastic
25 30 35 40 45 50 55 60 65 70 75 80 85 90 95
100
1.0 1,1 1.3 1.5 1.7 1.9 2.1 2.4 2.7 3.0 3.3 3.7 4.0 4.4 4.9 5.3
105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
5.8 6.4 6.9 7.5 8.1 8.8 9.5 10 11 12 13 13 14 15 16
Environment Factor - XE Environment GB GF
%E
1.0 6.0 9.0 9.0
%/l
Nu AC IF
19 13 29 20 43 24 .50
I
nT
exp
-2483 ((
1 TJ + 273
1 -m ))
Uc *UF *RW
TJ
Junction
Temperature
(C)
SF MF ML CL L 32
6-9
<1
MIL-HDBK-217F
6.6
TRANSISTORS,
LOW
NOISE,
HIGH
FREQUENCY,
BIPOLAR
DESCRIPTION Bipolar, Micmvave RF Transistor (F~ency >200 MHz, Power< lW)
kp =
b~z#&QKE
Failures/l 06 Hours
I
1
Applkatlon Note: The model applies to a single die (for multiple die use the hybrid model). The model does apply to ganged transistors on a single die. Power Rating Factor - Xn. . Base Failure Rate - & R~6d ~ (Pr, W~S) %R
I
All Types I I ,18 I
Temperature Factor - q TJ (C)

25
XT
1.0
TJ W)
105
XT
4.5
Pr < .1 .l<Pr 5.2 .2< PrS.3 .3< Pr $.4 .4< PrS.5 .5< Pr~.6 .6< PrS.7 .7< PrS.8 .8< Pr <.9 7KR..43 ~ = (Pr )37 P~ S.lw Pr >.lW
.43 .55 .64 .71 .77 .83 .88 .92 .96
30 35
40 45 50 55
1.1 1.3
;:; 1.7
110
115 120 125 130
4.8
5.2 5.6 5.9 6.3 6.8
60 65 70
75 80 85 E 100
;:: 2.3 2.5

2.8 3.0 3.3 3.6 3.9 4.2
:Z 145 150
155 160 165 170 175
7.2 7.7
0.1 8.6 9.1 9.7 10 11
Voltage Applied VCE/R~ed o<v

.3 <V=s .4<v .5< V#.6 V8S.7 VSS .8
Stress Factor - x~ VCEO % .11

.16 .21 .29 .39 .54
#.3
.4 #.5
XT =
exp -2114
((
1 TJ +273-=
1 ))
.6< .7<
TJ =
JunctionTemperature (oC)
.8<v~s.9 .9< % v~ v= CEO v~ s 1.0 = .045 exp (3.1(vS))
.73 1.0 (o< v~ s 1.0)
Applied VCE / Rated VC~ Vottage, Collector to Emitter Voltage, Collector to Emitter, Base Open
,,
. ..
!.,
MIL-HDBK-217F
6.6
TRANSISTORS,
LOW
NOISE,
HIGH
FREQUENCY,
BIPOLAR
Quality Factor - ~ Quality JANTXV JANTX JAN Lower 7tQ .50 1.0
Environment Factor - ~F Environment GB GF GM 2.0 5.0 Ns Nu Alc %F Uc UF RW SF MF ML CL ~E 1.0 2.0 5.0 4.0 19 4.0 5.0 7.0 12 16 .50 9.0 24 250
NOTE: For these devices, JANIXV quatii class must inciude IR Scan for die attach and scraan for barrier
layer pinhotes on gold metallized devices.
6-11
MIL-HDBK-217F
6.7
TRANSISTORS,
HIGH
POWER,
HIGH
FREQUENCY,
BIPOLAR
SPECIFICATION M! L-S-19500
DESCRIPTION Power, Mkrowave, RF Bipolar Transistors (Average Power 21 W) %= %%XAXM%ZE ailres/loOs
.
I

Frequency
(GHz)
s 0.5 ; 3 4 5
1.0
.038 .046 .065 .093 .13 .19
5.0 .039 .047 .067 .095 .14 ,19
10 .040 .048 .069 .098 .14 .20
Output Power (Watts) 50 100 .050 .067 .060 .080 .086 .11 .12 .16 .17 .23 .25 F= Frequency (GHz)
200 .12 .14 .20 .28
300 .20 .24 .35
400 .36 .42
500 .62 .74
600 1.1 1.3
lb
.032 exp(.354(F) + .00558(P))
OUtp@POwer W)
NOTE: Output power refers to the power level for the overall packaged device and not to indwidual transistors within the package (if more than one transistor is ganged together). The output power represents the power output from the active device and should not account for any duty cycle in pulsed applications. Duty cycle iS accounted for when determining A.
(Gnlri Mdalli7atinn\ \ -Vs (VCE/BVCE@
!.. . . . . . . . ... . . . .
Temperature
/Aliiminllm ,,,
,, ,?, .F, ., . ..--.,,--
Factor - nT
Matalli7atinn\
., W..
Vs (VCE/BVCES) .55 .40 .49 .59 .71 .85 1.0 1.2 1.4 1.6 1.8 2.1 TJ (~) Sloo 110 120 130 140 150 160 170 180 190 200 XT = .38exp )) s .40 .38 .57 .84 1.2 1.7 2.4 3.3 4.4 ?:; .45 .75 1.1 1.7 2.4 3.4 4.7 6.5 8.8 12 15 .50 1.1 1.7 2.5 3.6 5.1 7.1 9.7 13 18 23 30 1 = )) 1 1 TJ + 273 - ~ )) .55 1.5 2.3 3.3 4.8 6.8 9.5 13 18 $: 40
TJ (C) sl 00 110 120 130 140 150 160 170 180 190 200
s .40 .10 .12 ,15 .18 .21 .25 .29 .34 .40 .45 .52
.45 .20 .25 .30 .36 .43 .50 .59 .68 .79 .91 1.0
.50 .30 .37 .45 .54 .64 .75 .88 1.0
1.2 1.4
1.6
T = .1 exp -2903 (( (VS < .40)
1 TJ +273
1 =
-5794
1 TJ +273
(( (VS s .40) nT = ?.55 (VS - .35) exp )) v= -5794
- z (VS - .35) eXP -2903

(( (.4 < v~ s .55) v~ VCE BVCES = . =
TJ ~ 273
1 -m
(( (.4 < Vs s .55) = = VCE / BVCES Operating Voltage (Votts) Collector-Emitter Breakdown Voltage with Base Shorted to Emitter (Votts)
VCE / BVCES VCE Operating Voftage (volts) Collector-Emitter Breakdown Voftage with Base Shorted to Emitter (Volts) Peak Junction Temperature (C) BVCES
TJ
Peak Junction Temperature (C)
TJ
6-12
I -+
MIL-HDBK-217F
6.7
TRANSISTORS,
HIGH
POWER,
HIGH
FREQUENCY,
BIPOLAR
Application Factor - ~A
Application
Quality Factor - ~ Quality JANTXV ZQ .50 1.0 2.0 5.0
Duty Factor
N/A
Pulsed
s 1%
.46
5!% 1 0%+40 15% 20% 25% 2 30% =

=
.70 1.0 1.3 1.6

1.9
JANTX JAN Lower
2.2
N07E: For these devices, JANTXV qualityclass must IncludeIR Scan for die attach and screenfor barrier layer pinholes on gold metaltized devices.
7tA
7.6, CW .06 (Duty Factor

0/0) +
n~
.40,
Pulsed
Environment
Factor - zc b ~E
Matching Matching
Network
Factor - fiM ~M 1.0 2.0 4.0
Environment
GB GF
1.0 2.0 5.0 4.0 11 4.0 5.0 7.0

12 16 .50
Input and Output Input None
GM Ns Nu Ic IF *UC UF
*RW SF
MF ML CL
9.0 24 250
6-13
m-a
-l....
_._.
--
--
--
--
AAM
.-
.-.
MIL4-IDBK-217F
. 6.8 TRANSISTORS, HIGH FREQUENCY, GaA, FET DESCRIPTION Galls Low Noke, Driver and Power FETs (2 lGHz)
Base FaihJre Rate - ~ Average Output Power (Watts) 1 .5 .&6 .10 .16 .24 .37 :: .084
.13 .20 .30 .47 .72 1.1
<.1 1
4 5 6 7 0 9 10 .052 .052 .052 .052 .052 .052 .052 .052
.1 .054
.083 .13 .20 .30 .46 .71
2 --
4 -.
.36 .56 .85 ;::
.14 .21 .32 .50 .76 1.2 1.8
.96 1.5 2.3 3.5
%
%= F-
.052
.0093 exp(.429(F) Frequency (GHz) + .486(P))
1< F<1o, 4sFs1o, p.
P<.1 .ls Ps6
Average Output Power (Watts)
The average output power represents the power output from the active device and should not account for any duty cycle in pulsed applications.
Temperature Factor - m
Application Factor - XA
%T
Tc (=)
25 30 35 40 45 50 55 60 65 70 7s 80 85 90 95 100 1.0 1.3
TC (C)
Application (Ps 6W) All Low Power and Pulsed
~A 1 4
1.6 2.1 $:; 4.0 4.9

5.9 7.2 8.7 10 12 15 ;7
115 120 125 130 135 140 145 150 155 160 165 170 175
24 28 33 38 44 50 58 66 E 97
P = Average Output Power (Watts)
110 120 140 150
Xp 4485
((
&3-L
298 ))
TC =
Channel Temperature (C)
U-14
MIL-HDBK-217F
6.8
TRANSISTORS,
HIGH
FREQUENCY,
GaAs
FET
Matching Matching
Network
Factor
- ~M ~M 1.0 2.0 4.0
Environment Factor - xc L Environment %3 [ ~E 1.0 2.0 5.0 4.0 11 4.0 5.0 7.0 12 16 .50 7.5 24 250
Input and Output
GF % NS N %c
Input Only None
Qualiiy Factor- ICQ Quality JANTXV JANTX JAN Lower

~Q
% *UC *UF RW 1.0 2.0 5.0 SF

MF
.50
ML CL
MIL-HDBK-217F
6.9
TRANSISTORS,
HIGH
FREQUENCY,
Si
FET DESCRIPTION Si FETs (Avg. Power< 300 mW, Freq. >400 MHz)
SPECIFICATION MIL-S-19500 ~ = &Tz@E
Failures/l OGHours
Base Failure Rate - ~ Transistor Type A~ .060 I JFET Quality JANTXV JANTX JAN Temperature Factor - m
TJ (C) 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
XT 7tT
Quality Factor - ~
I I
MOSFET
.50 1.0 2.0 5.0
I
1.0 1.1
1.2 1.4 1.5 1.6 1.8 2.0 2.1 2.3 2.5 2.7 3.0 3.2 3.4 3.7 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
.023
Lower
3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0 6.4 6.7 7.1 7.5 7.9 8.3 8.7
Environment
Factor - ~=
L
Environment GB GF GM N~ N AIC
IF
xc 1.0 2.0 5.0 4.0 11 4.0 5.0 7.0 12 16 .50 9.0

24 250
T TJ
= =
exp
((
- 1925
1 TJ + 273
1 -E ))
Uc
*UF
RW SF
MF ML
CL
6-16
MIL-HDBK-217F
6.10 SPECIFICATION MIL-S-19500 DESCRIPTION Thyristors SCRS, Triacs
THYRISTORS
AND
SCRS
Failures/l 06 Hours
Base Failure Rate - ~ I Device Type All Types
I
Current Lb .0022 I .05 ,10 .50 1.0 5.0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 175 I
Rating
Factor
- ~R
Rated Forward Current ffms (Amps) .30 .40 .76 1.0 1.9 2.5 3.3 3.9 4.4 4.8 5.1 5.5 5.8 6.0 6.3 6.6 6.8 7.0 7.2 7.4 7.6 7.8 7,9
Temperature Factor - q TJ (%) 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95

100
TJ(%) 1.0 1.2 1.4 1.6 1.9 2.2 2.6 3.0 :::
4.4
8.9 9.9 11 12 13 15 16 la 19 21 23 25 27 30 32
5.0 5.7 6.4 7.2 8.0
105 110 115 120 125 130 135 140 145 150 155 160 165 170 175
~T
exp
((
-3082
1 TJ + 273
1 -m ))
m
+rms
=
=
($rmJ40
RMS Rated ForwardCurrent (Amps)
TJ
6-17
MIL-HDBK-217F
. 6.10 . . AND SCRS
THYRISTOf?S
Voltage Stress Factor - XC w V~ (Blocking Voltage Applied/ BlockingVottage Rated) v~ s .3<v .4<v .5< .6< .7< .8< .30 #.4 #.5 V#.6 V#.7 V@.8 V~S.9 Xs .10 .18 .27 .38 .51 .65 .82 1.0
Environment Factor - XC
L
Environment % GF % NS NU Alc IF Uc UF
%E 1.0 6.0 9.0 9.0 19 13 29 20 43 24 .50 14 32 320
.9 < v~ s 1.0
7CSD.1O ~s = (Vs)
1.9
(VS s 0.3)
%J SF
(VS> 0.3)
MF ML cL
Quality Factor - ZQ Quality JANTXV JANTX JAN Lower Plastic ! ZQ 0.7 1.0 2.4 5.5 8.0
6-18
. .
MIL-HD6K-217F
OPTOELECTRONICS,
DETECTORS,
ISOLATORS,
EMITTERS
DESCRIPTION Photodetectors,
Opto-isolators,
Emitters
Failures/l 06 Hours
Base Faiture Rate - & Quality Factor - ZQ
OptoelectfonkType
Photodetectors Photo-Transistor Photo-Diode Opto-isolators Photodbde Output, Si@e Device
%
.0055 .0040
Quality JAW JANTX JAN
YCQ .70 1.0

2.4
.0025 .013 ,013 .0064 .0033 .017 .017 .0086
Photot:aosistor Output, Single Device Photodarlington Output, Single Device Light Sensitive Resistor, Single Devioe Photodiode Output, Dual Device Phototransistor Output, Dual Device Photodarlington Output, Dual Device Lght Sensitive Resistor, Dual Device Emitters Infrared Light Emitting Diode (IRLD)
Lower Plastic
5.5 8.0
Environment Factor - n Environment GB

~E
1.0 2.0 8.0 5.0
.0013 .00023
GF
LightEmittingDiode (LED) Temperature Factor - ~T TJ (C) 25 30 35 40 45 50 55 60 65 70 XT 1.0 1.2 1.4 1.6 1.8 2.1 2.4 2.7 3.0 3.4 TJ (C) 75 80 85 90 95 100 105 110 115
GM
Ns
N
I
12 4.0 6.0 6.0 8.0 17 .50 9,0 24 450 ;

I <
XT Ic 3.8 4.3 4.8 5.3 5.9 6.6 7.3 8.0 8.8 IF Uc UF RW SF MF ML
ttT =
TJ =
exp
-2790 ((
1
TJ +273-~
1
))
c1
6-19
MIL-HDBK-217F
I
6.12
OPTOELECTRONICS,
ALPHANUMERIC
DISPLAYS .
DESCRIPTION ~numedc Display
% Base FaihJre Rate - &

Number d %
&TQzE
Failures/l 06 Hours
Tenqwature TJ (C) 25 30 35 40 45 50 55 60 65 70 ~T 1.0 1.2 1.4 1.6 1.8 2.1 2.4 2.7 3.0 3.4 Factor - q TJ (%) 75 80 85 90 95 100 105 110 115 %T 3.8 4.3 4.8 5.3 5.9 6.6 7.3 8.0 8.8
+)
.00026
.00030 X)0043 .00047 .00060 .00064 .00077 .00081 .00094 .0011 .0013 .0015 .0016 .0018 .0020 .0021 .0023 .0025 .0026
Charactws 1 1 whgk
2 2
W/b@C
.00043
Chip .00047 .00066
Chip
.00090
.0013 .0013 .0017 .0018 .0022 .0026 .0030 .0034 .0039 .0043 .0047 .0052 .0056 .0060 .0065 ~C,
3 3 Wlhxjo chip 4 4 w/Logic Chip 5 6 7 8 9 10 :; 13 14 15 ~ - .00043(C)+ ~. c= %.00009+
%T =
exp
((
-2790
1 -ZE ))
TJ + 273
TJ
Junction Temperature ~C)
Environment Factor - xc
for Segment Displays ~C, Diode Array Displays
Environment 1.0 2.0 %

Ns Nu
.00017(C)+
Number of CharaAers .000043 for Displays with a Logic Chip 0.0 for Displays without Imgic Chip
8.0 5.0 12 4.0 6.0 6.0 8.0 17
NOTE: The numbar of characters in a display is the number of characters mntained in a _ sealed package. For example, a 4 character display comprising 4 separately packaged single characters mounted together would be tine character dispiays,
AC IF %c *UF
not 1-four character display. Quality Factor - ~ I Quality JANTXV JANTX JAN Lower Plastic
lcQ
.50 0.7 1.0 2.4 5.5 8.0 ML Ci 24 450 MF 9.0
6-20
----
------
--------
MIL-HDBK-217F
OPTOELECTRONICS,
LASER
DIODE
DESCRIPTION laser Diodes with Optical Flux Densities <3 MW/cr# amt Fofward Cufrmt <25 ~
Failures/l 06 Hours
Forward Cument Factor, I Forward Peak Current (Anps) .050 .075 .1 .5 1.0 2.0 3.0 4.0 5.0 10 15 20 ~ 0.17 0.21 0.62 1.0 1.6 2.1 2.6 3.0 4.8 6.3 7.7 8.9 q
Temperature Factor - XT TJ (C) 25 30 35 40 45 50 55 60 65 70 75 1.0

1.3
1.7 2.1 2.7 3.3 4.1 5.1 6.3 7.7 9.3
q
I
(1)68
Fonnmrd Peak Currant (Amps), I $25
NOTE: For VariaMa Current Souroes, use the Initial Current Value.
Application
Application
Factor %A
x~ 4.4 .32 .45 .55 .63 .71 .77 .84 .89 .95
Duty Cydo 1 .1 .2 .3 .4 :: .7 .8 .9
XT
exp
((
-4635
TJ + 273
- ~
1
)) Pulsed
TJ
JunctionTemperature(C)
Quality Factor - ~ Quality Hermetic Package Nonhermetic with Faoet Coating Nonhermetic without Facet Coating 11.0 1.0 3.3
~A = 4.4, CW
%A = ~
Cycle
0-5,f%.i-d
NOTE: A duty cyclaof one in pulsed application represents the maximum amount it can ba driven in a pulsad mode. This is different from wntinuous wave applicationwhich will not withstandpulsed
oparatingIavels on a continuousbasis.
-..
-----
--
MIL-HDBK-217F
. ..
6.13
OPTOELECTRONICS,
LASER
DIODE Environment Factor - fiE %p .50 .53 ,56 .59 .63 .67 .71 .77 .83
.91 1.0 1.1 1.3 1.4
Power ~radation
Ratio P~P~
Factor - np
Environment GB GF GM Ns Nu Ac IF %c UF RW SF MF
ML
ttE 1.0 2.0 8.0 5.0 12

4.0
9 1
0.00 .05 .10 .15 .20 .25 .30 .35 .40 .45
.50 .55 .60 .65 .70 .75 .80 .85 .90 .95 ~
6.0 6.0 8.0

17
1.7
2.0 2.5 3.3 5.0 10
.50 9.0
24
lcp =
1 2 (1 -& PS
s .95
450
Ps = Pr =
Rated Optical Power Output (rnW) Required Optical Power Output (mW)
NOTE: Each laser diode must be replaced when power output falls to Pr for fai lure rate prediction to be valid.
6-22
MIL-HDBK-217F
6.14
DISCRETE
SEMICONDUCTORS,
TJ
DETERMINATION
Idealty, device case temperatures should be detetined Wl@me~. D8Vb #.IndOn te~-m iS then ~M~ TJ = Tc + where: TJ TC = = Junction Temperature(%) Case Temperature (~).
from a detailed thermal anatysis of the with tb folbwing relationship:
e~p
tf no thermal analysis exists, the defautt case
temperatures shown in Table ~1 should be assumed. Junction-to-Case Thermal Resistance (CAN). This parameter should be determhwd from vendor, military specffkation sheets or Table 6-2, whiohever is greater. It may also be estimated by taking the mclpmcal of the reconvnended &wa!lng Ieve!. For examp!e, a devtce derating reconxnendatton of .16 W wou!d restAina6K of6.250CAN. lf6wcannot bedetermhwd assurnea O~vabeof 7oc/w. P= Device Worse Case Power Diss@ation (W)
The models are not applicable to devices at overstress conditions. If the calculated junction temperature is greater than the maximum rated junction temperature on the MIL slash sheets or the vendors specifications, whichever is smaller, then the device is overstressed and these models ARE NOT APPLICABLE.
Table 6-1:
Default
Caee
Temperatures
(Tc)
for All Environments
Environment
TC (C)
I
% Ns Nu AC IF Uc UF *RW SF MF ML CL
35 45 50 45 50 60 60 75 75 60 35 50 60 45
MIL-HDBK-217F
6.14
DISCRETE
SEMICONDUCTORS,
T i
DETERMINATION
Table
6-2:
Approximate
Juriction-to-Case Devices
Thermal
Resistance
(6JC)
for
Semiconductor
In Varfous
Package Sizes
Package Type TO-1 TO-3 TO-5 TO-8 TO-9 TO-12 TO-1 8 TO-28 TO-33 TO-39 T041 TO-44 T046 TO-52 TO-53 TO-57 TO-59 TO-60 TO-61 TO-63 To-66 TO-71 TO-72 TO-83 TO-89 TO-92 TO-94 TO-99 TO-126 TO-127 TO-204 TO-204AA
OJC (w 70 10 70 70 70 70 70 5 70 70 10 70 70 70 5 5 5 5 5 5 10 70 70 5 22 70 5 70 : 10 10
Package Type TO-205AD TO-205AF TO-220 Do-5 D07 Do-9 DO-13 DO-14 Do-29 Do-35 DO-41 DO-45 DO-204MB DO-205AB PA-42A,B PD-36C PD-50 PD-77 PD-180 PD-319 PD-262 PD-975 PD-280 PD-216 PT-2G PT-6B PH-13 PH-16 PH-56 PY-58 PY-373
Ok (%A#) 70 70 5 5 5 10 5 5 10 5 10 10 10 5 70 5 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70
When available, estimates must be based on military specification sheet or vendor vaiues, whichever is higher.
OJC
6-24
MIL-HDBK-217F
6.15 Example Given:
DISCRETE
SEMICONDUCTORS,
EXAMPLE
Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25C, one side onty, and 0.35 W at 25C, both sides, with TM = 2000C, operating in linear service at 55C case temperature in a sheltered naval environment. Side one, NPN, operating at 0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30 percent of rated voltage. The device operates at iess than 200 MHz.
Since the device is a bipolar dual transistor operating at low frequency (c200 Miiz), it falls into the Transistor, Low Frequency, Bipoiar Grwp and the appropriate modei is given in %ction 6.3. Since the device is a dual device, it is necessary to compute the faiiure rate of each side separately and sum them OJc k ufk~wn, OJc = 70%/w ~i~ be a~md. t~e{k. Also, si~ Based on the given information, the following model factors are determined from the appropriate shown in Section 6.3. .00074 2.2 2.1 1.5 .68 .21 .11 2.4 9 Using equation shown with XR tabie, Pr = .35 W Side 1, 5070 Voltage Stress Side 2, 3(I?% Voitage Stress s@O1, TJ=TC+eJC %55+70( .1).62c Side 2, TJ = 55+ 70(.05) = 59C tables
= =
(.00074)(2.2)(1 .011 Faiiures/106
.5)(.68) (.21)(2.4)(9) Hours
+ (.00074)(2.1)(1
.5)(.68) (.1 1)(2.4)(9)
6-25
MIL-HDBK-217F
7.1
TUBES,
ALL TYPES
EXCEPT
TWT AND
MAGNETRON
DESCRIPTION All Types Except Traveling Wave Tubes and Magnetrons. Includes Receivers, CRT, Thyratron, Crossed Field Amplifier, Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed Klystron, CW Klystron
= kb7cLnE
Failures/l
06 Hours
(Includes Tube Type Receiver Tnode, Tetrode, Pentode Power Rectifier

Thyratron Crossed Field Amplifier QK681 SFD261 Pulsed Gridded 2041 6952 Transmitting Triode, Peak Pwr. s 200 KW, Avg. Pwr, s 2KW, Freq. g 200 MHz Tetrode & Pentode, Peak Pwr. s 200 KW, Avg. Power 5 2KW, Freq. S 200 KW If any of the above limits exceeded Vidicon Antimony Trisulfide (Sb2S3) Photoconductive Material Silicon Diode Array Photoconductive Material Twystron VA144 VA145E VA145H VA913A Klystron, Pulsed 4KMP1OOOOLF 8568 L3035 L3250 L3403 SAC42A VA842 Z501OA ZM3038A
q
Both
Base Failure Rate - ~ and Wearout Failures) Rando[ Tube Type Lb 5.0 10 50 260
150 140 390
Klystron, Low Power, (e.a Local Oscillator) Klystron, Continuous Wave* 3K3000LQ 3K50000LF 3K21OOOOLQ 3KM300LA 3KM3000LA 3KM50000PA 3KM50000PA1 3KM50000PA2 4K3CC 4K3SK 4K50000LQ 4KM50LB 4KM50LC 4KM50SJ 4KM50SK 4KM3000LR 4KM50000LCI 4KM50000LR 4KM170000LA 8824 8825 8826 VA800E VA853 VA856B VA888E
30
9.0 54 150
64 19
75 100
250
51 48 850 450 490
230 43 230 66 69 93 100 18 150 190
110 120 150 610 29 30 28 15 38 37 140 79 57 15 130 120 280 70 220 65 230
If the CW Klystron of interest is not listed above,
use the Alternate CW Klystron ~ Table on the following page.
If the pulsed Klystron of interest is not listed above,
use the Alternate Pulsed Klystron Ab Table on the following page.
MIL-I-IDBK-217F
7.1
TUBES,
ALL
TYPES
EXCEPT
TWT
AND
MAGNETRON
Attemate* Base Failure Rate for Pulsed Klystrons - A

F(GHz)
Learning I T (years) <1
Factor - XI L
Zs!&!L
.01 .30
.80 1.0 3.0 5.0 8.0 10 25
.2
16 16 16 17 18 19 21 22 31
.4
16 16 17 17 20 22 25 28 45
.6
16 17 17 18 21 25
.8
16 17 18 18 23 28
1.0
16 17 18 19 25 31
2.0
16 18 21 22 34 45
4.0
6.0
10 2.3 1.0
;: 25 28 51 75
;: 30 34
2 >3
30
34 60
35
40 75
40
45 90
63
75 160
110 q = = = T =
10(T) -2, 1 sT<3
+2=
F P=
2.94 (F)(P) + 16 Operating Frequency in GHz, 0.2s Fs 6 Peak Output Power in MW, .01 s Ps 25 and P s 490 F-295
10, TsI 1,T23 Numtw of Years since Introduction to Field Use
See previous page for other Klystron Base Failure Rates.
Factor - nE
GB
T
Aftemate Base Failure Rate for CW Klystrons - ~
GF GM
1.0
14 8.0 24 5.0 8.0 6.0 12 40 .20 22 57 1000
3K!!!!L
0.1 ;;; 5.0 8.0 10 30 50 80 100 30 31 32 33 34 35 45 55 70 80 31 32 33 34 35 36 46 56 71 81 33 33 34 35 37 38 48 58 73 34 34 35 36 38 39 49 59 38 39 40 41 42 43 47 48 49 50 57 57 58 66 66
N~ Nu %c IF %c
UF RW
SF
%
P= F =
0.5P + .00046F + 29 Average Output Power in KW, 0.1 s Ps 100 and Ps 8.0(10) 6( F)-17 Operating Frequency in MHz, 300s Fs8000
MF ML CL
q See previous page for other Klystron Base Failure Rates.
MIL-HDBK-217F
7.2 DESCRIPTION Traveling Wave Tubes Xp = &E Failures/l 06 Hours
TUBES,
TRAVELING
WAVE
Environment Factor - XF Base Failure Rate - &

Power (W) 100 500 1000 3000 5000 8000 10000 15000 20000 30000 40000 .1 1 2 Frequency (G-Hz) 4 6 8 10 29 29 29 32 33 39 43 52 64 14 42 42 43 46 49 56 62 76 93 18 61 62 62 68 72 75 83 91 110 140
Environment GB GF GM Ns N %c IF Uc
~E 1.0 3.0 14 6.0 21 10 14 11 18 40 .10 22 66 1000
11 12 13 16 20 24 16 20 24 11 12 13 12 14 16 20 24 11 172125304465 12 13 14 12 13 15 18 22 26 19 23 20 13 14 16 14~5~62024293551 15 16 18 22 26 32 17 18 20 24 29 35 20 22 24 29 36 43 25 27 30 36 43 53
%= p.
11(1.00002)P
(1.l)F
UF RW
Rated Power in Watts (Peak, if Pulsed), .001< P s 40,000 = Operating Frequency in GHz, .3s Fs 18.
SF MF
ML
If the operating frequency is a band, or two different values, use the geometric mean of the end point frequencies when using table.
CL
/-3
MIL-HDBK-217F
DESCRIPTION Magnetrons, Pulsed and Continuous Wave (CW) %=% 7c@@E Failures/l 06 Hours
7.3
TUBES,
MAGNETRON
Qs!!?!m
.01
.05 .1
.3 .5 1 3
.1 1.4 1.9 2.2 2.8 3.1 3.5 4.4
.5 4.6 6.3 7.2 9.0 10 11 14
1 7.6 10 12 15 17 19 24
5 24 34 39 48 54 62 77
10 41 56 64 80 89 100 130
20 67 93 110 130 150 170 210
Frequency (GHz) 30 40 50 91 130 110 120 150 180 140 180 210 180 220 260 200 240 290 230 280 330 350 280 410
60 150 210 240 300 330 380 470
70 170 230 270 330 370 420 530
80 190 260 290 370 410 470 580
90 200 280 320 400 440 510 630
100 220 300 350 430 480 550 680
Pulsed
Magnetrons:
I
.1 s Fs 100 .ol<p~5
CW Magnetrons (Rated Power < 5 KW):

A@8
%) =
F P = =
9(F)
.73 ~pl.20
Operating Frequency in GHz, Output Power in MW,
I
Environment
Utilization Factor - q I Utilization (Radiate Hours/ Filament Hours) 0.0 0.1 0.2 0.3
0.4 7CU .44
Environment
Factor - mr 1 nc
GB GF GM N~ Nu *IC
IF
1.0 2.0 4.0

15 47 10 16 12 23 80
.50 .55
.61
0.5 0.6 0.7 0.8 0!9 1.0

nu R = = 0.44 + 0.56R Radiate Hours/Filament Hours
.66 .72 .78 .83 .89 .94

1.0
*UC
UF *RW
.50
Construction Construction Factor - m
MF
XC 1.0 ML
43 133 2000
c, CW (Rated Power< 5 KW) Coaxial Pulsed Conventional Pulsed 1.0 5.4
/-4
MIL-HDBK-217F
8.0
LASERS,
INTRODUCTION
. . , i.e., those items The models and failure rates presented in thk section apply to ~ wherein the Iasing action is generated and controlled. In addition to laser peculiar Items, there are other assernbhes used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses, etc.). The failure rates for these parts should be determined with the same procedures as used for other electronic and mechanid devices in the equipment or system of which the laser is a part. The laser failure rate models have been developed at the functional, rather than piece part level because the available data were not sufficient for piece part model devebpment. Nevertheless, the laser functional models are included in this Handbook in the interest of completeness. These laser models will be revised to include piece part modek and other laser types when the data become available. Because each laser family can be designed using a variety of approaches, the failure rate rnodets have been structured on three basic laser functbns whii are common to most laser families, but may differ in the hardware knplernentation of a given function. These functions are the Iasing rneda, the laser pumping mechanism (or pump), and the coupfing method. Examptes of media-related hardware and reliability Influencing factors are the solid state rod, gas, gas pressure, vacuum integrity, gas mix, outgassing, and tube diameter. me electrical discharge, the flashlamp, and energy level are exarr@es of pump-related hardware and reliabilii influencing factors. The coupling function reliability influencing factors are the Q switch, mirrors, windows, crystals, substrates, coatings, and level of dust protection provided. Some of the laser models require the number of active optical surfaces as an input parameter. An active opticai surface is one with which the laser energy (or beam) interacts. internally reflecting surfaces are not counted. Figure 8-1 below illustrates examples of active optiil suffaces and count.
Tot*
wloclw9 Mnuf cho Acthm Qxkalsurb20
Pdult
.
b@u
*am Examples of Active Optical Surfaces
Figure
8-1:
8-1
MIL-HDBK-217F
8.1
LASERS,
HELIUM
AND
ARGON DESCRIPTION Helium Neon Lasers Helium Cadmium Lasers Argon Lasers
~ ..
= MED,AZE
+ COUPLING
n E Failures/l
06 Hours
Lasing Media Failure Rate - kMEDIA Type He/Ne He/Cd Argon MEDIA 84 228
457
Environment Factor - n=
b
Environment GB GF GM N~ Nu %c %
~E .30 1.0
4.0
3.0 4.0 4.0 6.0 7.0

9.0
Coupling Failure Rate - ~0[ lpi ,NG ----... Types %OUpLING

Helium Argon 0 6
Uc
UF RW
5.0 .10 3.0 8.0 NIA
SF MF ML
NOTE: The predominant argon laser failure mechanism is related to the gas media (as reflected
CL
in XMEDIA; however, when the tube is refilled periodically (preventive maintenance) the mirrors can be expected to (as part of ~OUpLIN@ deteriorate after approximately 104 hours of operation if in contact with the discharge region. COUPLING is negligible for helium lasers.
8-2
MIL-HDBK-217F
q-
8.2
LASERS,
CARBON
DIOXIDE,
SEALED
DESCRIPTION C02 Sealed Continuous Wave Lasers
Lasing Media FaiWe Rale - ~DM Tube Current (rnA) 10 20 30 40 50 100 I %UEDIA 240 930 1620 2310 3000 6450
Active OptW
-. Surfaces 0s 1
2
1
2
~S
- Numbr
of Active Optical SUrfaces
%tEDIA - 69(1) -0 l= Ttitimti(mA), 10s Is15O
NOTE: Only *ive optical surfaoss ars counted. An active optical surfaca is one with
whiohth.laser anorgyorbwn~ Internallyreflecting surfaces are not oounted. on the Sae Fquro 8-1 for examples datormining
number of optical surfaces.
Gas Overfill Factor = * C02 Overfill Percent (%)

%0
Environment Faotor - XE
o
25 50
1.0
Environment %3 % GM
%E .30 1.0 4.0 3.0 4.0 4.0 6.0 7.0 9.0 5.0 .10 3.0 8.0 WA
.75 .50
%-1
-.01 (%0Overfill)
Ns Nu AC IF *UC *UF
Overfill percent is based on the psrwnt increase ovsr the o@imum002 partialpssure which is (llm=l normalIyintherango ofl.5t03Tm mm Hg Prassure) for mostsealad C02 lasers.
Peroent of BaJlast Vohmetric Increase
RW sF
o
50 100 150 200 n~ - (1~) (% Vol. Inc./l 00)
1.0
.58 .33 .19 .11
hu~ ML c
U-3
MIL-HDBK-217F
8.3
LASERS,
CARBON
DIOXIDE, FLOWING DESCRIPTION C02 Flowing Lasers
+J = &JpLIN&OS
x E Failures/l OGHours
Coupling Failure Rate - XCWPL,NG Power (KW) .01 .1

1.0
Environment
Factor - XE
%OUpLING
Environment GB GF GM Ns
fiE .30 1.0 4.0 3.0 4.0 4.0 6.0 7.0 9.0
5.0 .10 3.0 8.0 NIA
I
3WP
300
%OUPUNG P _ Aver-
PowerOutputin KW, .01 s Ps 1.0
NU *IC IF *UC *UF

*RW SF MF ML
Beyond the 1KW range other glass failure mechanisms b~in to predominate and alter the ~OUpLING values.
It should also be notedthat C02 flowinglaser optical
devices are the primary source of failure occurrence.

A tailored optical cleaning preventive maintenance program on optic devices greatty extends iaser fife.
Optical Surface Factor - ~S Active Optical Surfaces 1 2 I 0s 1

2
CL
XOS - Number of Active Opticai Surfaces NOTE: Oniy active optical surfaces are counted. An active opticai surface is one with which the iaser energy or beam interacts. Internally reflecting surfaces are not counted. See Figure 81 for exampies on determining the number of opticai surfaces.
8-4
,.. MIL-HDBK-217F
8.4
LASERS,
SOLID
STATE,
ND:YAG
AND
RUBY
ROD
DESCRIPTION Neocfymium-Ytt~m-AbminurnGamet Ruby Rod Lasers
(ND:YAG) Rod Lasers
+)= ( p~~ +MEDIA

I Pump Pulse Failure Rate - kpuMp
fXannn
1 -------.
+ 16.3 xc~s)
~E Failures/l
06 Hours
Pump Pulse Failure Rate - kpUM@ IKnmtnn Ftaehla~} ,. ... ~.-.. .

.-w. ..-. .~v,
Fla=hlarrmm\
--. . . . .-,
The empiricalfmula
used to determine ~UMp
The empirical formula used to determine *MP Ktypton lamp is: ~p - [625][,0($9
for
(Failures/1@ Hours) for Xenon lamps is:
km 1[ ] Failures/l
06 Hours
+WMP
= @~)
(PPS) 2000
[
k (d,k)
8058
kpUMp ] ~nm,
is the failure me contributionOf the krypton flashlamp or flashtube. me flashlamps
@lJfvIp
k the failure rate contribution of the xenon flashlamp or flashtube. The flashlamps evaluated herein are linear types used for military solid state laser systems. Typical defautt model parameters are given below.
evalutad herein are the continuouswave (CW) type and are most widely used for commercial solid state applkations. They are approx-imatety7mm in diameter and 5 to 6 inches brig. P is the average input power in Idbwatts. Default value: P =4. is the flashlamp or flashtube arc length in inches. Defautt value: L -2. is the woling factor due to various cooling
media immediately surrounding the flashlamp or fkht~. ~~L = 1 for a~ air or inert gas cooling. n-.1 for all liquid = .1, liquid
PPS
is the repetition pulse rate in pulses per
second. Typbal values range between 1 and 20 pulses per second.

Ej is the fkwhlamp or flashtube input energy per pulse, in joules. Its value is determined from the actual or desgn input energy . For values less than 30 @Jes, use Ej = 30. Default value: E = 40. j is the flashlamp or flashtube inside diameter, in millimeters. Default value: d = 4. is the flashlamp or flashtube arc length in inches. Default value: L = 2. is the truncated pulse width in microseconds. Use t -100 microseconds for any truncatd pulse width exceeding 100 microseconds. For shotier duration pulses, pulse width is to be measured at 10 percent of the maximum current amplitude. Defautt value: t = 100. is the cooling factor due to various cooling media immediately surrounding the flashlamp or flashtube, ~~~L = 1.0 for any air or inefl gas cooling, ~C@L = .1, Iquid cooled. = .1 for
Zca
designs. Defautt va!ue: ~c~L cooled.
Meda Failure Rate - ~EDiA Laser Type ND:YAG ) R~ PPS

F
MEDIA o _ (3600) (PPS) [43.5 F2052~
is the number of pulses per second

is the energy density in Joules per cm. z/pulse over the cross-sectional area of the laser beam, which is nominalty equivalent to the cross-sectional area of the laser rod, and its value is determined from the actual design parameter of the laser rod utilized.
xc~L
ail liquid cooled designs. Default value: COOL
NOTE: ~MEDIA is negligible for ND:YAG lasers.
8-5
MIL-HDBK-217F
8.4
LASERS,
SOLID
STATE,
ND:YAG
AND
RUBY
ROD
CouplingCleadinassFactor - -z
Lovd Cleardiness Rk3#ltml#c&&s ~-r~d. ~ BOUOWBrovided over p tin. 30 % 1
Environment Factor ~E Environment GB GF GM Ns Nu

60
%E .30 1.0 4.0 3.0 4.0 4.0 6.0 7.0 9.0

5.0 .10 3.0 8.0 N/A
Mln&nalprmXw$Orwdwing opaning, makltananoe, mpdr, and testing. Bellows prddad Ovw Optkat train.
duringopening, Minimal pr~ons mdntorumca, repair,and ta8drg. No tx?lbw, prOvWxfOvu ~ train.
Ac AF %c
NOTE: Mhoughsodod qsternstendmberelMle OnoeCompatible aterials m havebeenSeh30ted and proven,extreme caremuststtlt e takento prevsnt b theentranoe partkdatesduringmanufacturing, of field ftashlamp repkemmt, or routine maintenance repair. Contamhatkm is the major cause of solid state lasermatfurx3ion, and spedal provlsbns and vigilanoe must oontirwalty be provided to maintain the deanllness level required.
UF
RW SF MF ML
CL
Optioal Surfaoe Factor - ~S Active Optical Surfaces 1 2 0s 1 2
~s
= Numbr of ActiveOptical Surfaces
NOTE: Only activeoptioalsurfmms munted. are Anactiveopticalsurfaceis one withwhid the iaser energyor beam interacts.Internally reflecting surfacesare notcxxmted.See Figure8-1 for
examphw on dettinlng surfaces. the number of OPUcat
8-6
,,,
MIL-HDBK-217F
9.0
RESISTORS,
INTRODUCTION
This section includes the active resistor specificationsand, in addition, some eider/inactive specifications are included because of the large number of equipments stilt in field use which oontain these parts. The Established Reliability (ER) resktor family generaity has four qualification failure rate levels when tested per the requirements of the appikabie specification. These quaiiitbn failure rate levels difier by a factor of ten (from one level to the next). However, field data has shown that these failure rate levels differ by a factor of about only three, hence the ~ values have been set accordingly. The use of the resistor modek requires the calculation of the electrfcat power stress ratio, Stress = -~ Pow@r/~t~~er,orPr~9.16 for variable msktors. The models have been structured such that derating curves do not have to be used to find the base failure rate. The rated IXWer for the stress ratb is ~al to the full nominal rated power of the resistor. For example, a MlL-R_ resistor has the foiiowing derating cume:
100
80 60
40
20
0
0 40 80 120
AMBlENT TEMPERATURE DEGREES CELSIUS
IN
Figure
9-1:
MIL-Ft-39006
Deratlng
Curve
This particular resistor has a rating of 1 watt at 70C arrtknt, or below. If Itwere behg used in an ank#ent temperature of 10OC, the rated power for the stress calculation would still be 1 watt, ~ 45% of 1 watt (as read off the curve for 100*C). Of course, while the deratlng cuwe k not needed to determine the base failure rate, it nmst still be observed as the maxinum operating condtbn. To aid in detenMing if a resistor is being used within rated conditions, the base failure rate tables show entries up to certain combinations of stress and temperature. If a given operating stress and temperature point faits in the blank portion of the base failure rate table, the resistor is ovemtmssed. Such wisappfbatbn wouid require an anatysis of the circuit and operating conditions to bring the resistor within rated conditions.
9-1
MIL-I+DBK-217F
9.1
RESISTORS,
FIXED,
COMPOSITION DESCRIPTION Resistors, Fixed, Composition (Insulated), Established Reliability Resistors, Fixed, Composition (Insulated)
SPECIFICATION MIL-R-39008 MIL-R-11
STYLE RCR RC
Xp s kbXRXQnE Failures/l OGHours
Base Failure Rate - ~ TA (%)

0 10 20 30 40 50 60 ;: 90 100 110 120
stress.5
.00015 .00021 .00031 .00046 .00067 .00098 .0014 .0021 .0031 .0045 .0065
Quality Factor - ~ Quality .9

.00028 ,00043 .00064 .00096 .0014 .0021 .0032 ,0048
7CQ
.1
.00007 .00011 .00015 .00022 .00031 .00044 .00063 .00090 .0013 .0018 .0026 .0038 .0054
.3
.00010 .00015 .00022 .00031 .00045 .00066 .00095 .0014 .0020 .0029 .0041 .0060
.7
.00020 .00030 .00045 .00066 .00098 .0014 .0021 .0032 .0047
s
R P M MlL-R-l 1 Lower
.03 0.1 0.3 1.0 5.0 15
Environment Factor - ~E
%=4.5x 10-gexp ( 12 (W))exff?(-))
Environment GB
~E
1,0
3.0 8.0 5.0
13 4.0
T= s=
Ambient Temperature (C) Ratio of Operating Power to Rated Power
GF GM Ns Nu
Resistance Factor - ~R Resistance Range (ohms) <.l >.l M Mtol M OM ~R 1.0 1.1 1.6
2.5
Ic IF %c *UF RMI
5.0 7.0 11 19 .50 11 27 490
>l.OMtol
>1OM
SF MF ML b CL
9-2
-----
- --
1-
r.llauLe
Lila
aullclllu
LAG
u&uw*,
.y
*u
b..*--
~-----
MIL-HDBK-217F
9.2 SPECIFICATION MIL-R-39017 MIL-R-22684 MIL-R-55182 MIL-R-105O9 STYLE RLR RL RN (R, C, or N) RN
RESISTORS,
FIXED,
FILM
DESCRIPTION Fixed, Film, Insulated, Established Reliability Fued, Film, Insulated Fixed, Film, Established Reliability Fixed, Film, High Stability
Failures/l OG Hours
Base Failure Rate - ~ IMIL-R-22684----- MIL-R-990171 .....- and ...._ .._ --- . -I
Base Failure Rate - ~ [MIL-R-1 0509 and MIL-R-551 82) .9

.0013 .0014 .0016 .0018 .0019 .0022 .0024 .0027
TA (%) 0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
.1
.00059 .00063 .00067 .00072 .00078 .00084 .00092 .0010 .0011 .0012 .0013 .0015 .0017 .0019 .0022
.3
.00073 .00078 .00084 .00090 .00098 .0011 .0012 .0013 .0014 .0016 .0018 .0020 .0023
.5
.00089 .00096 .0010 .0011 .0012 .0014 .0015 .0017 .0018 .0021 .0023 .0026
.7
.0011 .0012 .0013 .0014 .0016 .0017 .0019 .0021 .0024 .0027
TA (Z: o 10
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
.1
.00061 .00067 .00073 .00080 .00088 .00096 .0011 .0012 .0013 .0014 .0015 .0017 .0018
.3
.00074 .00082 .00091 .0010 .0011 .0012 .0013 .0015 .0016 .0018 .0020 .0022 .0024 F
.5
.00091 .0010 .0011 .0013 .0014 .0015 .0017 .0019 .0021 .0024 .0026 .0029 .0033
.7
.0011 .0012 .0014 .0016 .0017 .0020 .0022 .0025 .0028 .0031 .0035 .0039 .0043 F
.9
.0014 .0015 .0017 .0019 .0022 .0025 .0028 .0032
.0040 .0045 .0051 .0058
z~~ .0024 .0026 .0029
.0033 .0036
.0045
=;
0065
~=3.25x 104 .xp(*)exf(=))
~=
5x10-5exp
((=YXPP (-))
35
T. s.
Ambient Temperature (oC) Ratio of Operating Power to Rated Power NOTE: Do not use MlL-R-l 0509 (Characteristic B) below the line. Points below are overstressed.
S =
9-3
MIL-HDBK-217F
9.2
RESISTORS,
FIXED,
FILM
Resistance Factor - ~n ,, Resistance Range (ohms) <.l M

>().lMtOIM
lc~ 1.0
1.1
Environment Factor - ~
b
Environment
~E
GB GF
1.0
2.0 8.0
>l.OMtol >IOM
OM
1.6
Ns
2.5
4.0 14 4.0 8.0 10 18 19 .20 10 28 510
Nu *IC
QuaJ-~ Factor - ~ Quality s R P M MlL-R-l 0509 MIL-R-22684 Lower lt~ .03 0.1 0.3 1.0 5.0 5.0 15
IF
*UC
*UF
%+/v
SF
MF
ML c,
9-4
MIL-HDE3K-217F
9.3 SPECIFICATION MIL-R-11804 STYLE
RESISTORS,
FIXED,
FILM,
POWER
RD
DESCRIPTION Fued, Film, Power Type
Ap = kb7cRz*7cE Failures/l
Base Failure Rate - ~ TA (%)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 & %=
OGHours
QuaIii Factor - ~
%Q !
.1
.0089 .0090 .0092 .0094 .0096 .0098 .010 .010 .010 .011 .011 .011 .012 .012 .012 .013 .013 .014 .014 .015 .015 .016
.3
.0098 .010 .010 .010 .011 .011 .011 .012 .012 .012 .013 .013 .014 .014 .014 .015 .016 .016
stress .5
.011 .011 .012 ,012 .012 .013 .013 .014 .014 .015 .015 .016 .016 .017
.7
.013 .013 .014 .014 .015 .015 .016 .016 .017
Quality .9
.015 .015 .016 .017 .017
I I
\
MIL-SPEC
Lower
I I
1.0
3.0
Environment Factor - x=
Environment GB GF GM Ns NU
2.0 10
5.0
17
*IC IF *UC
202 ((*)2) x
6.0 8.0
14 18 25
7.33 x 10-3 exp
*UF , RW SF MF ML C
xp((~) T= s=
(=)8)3
.50
14 36 660
Resistance Factor - ZR Resistance Range (ohms) lo to 100 > 100to

>lOOKtol >lM
x~ 1.0
100K
M
I I
1.2
1,3
3.5
9-5
---
MIL-HDBK-217F
9.4
RESISTORS,
NETWORK, STYLE Rz
FIXED,
FILM
DESCRIPTION Resistor Networks, Fixed, Film
SPECIFICATION MIL-R-83401
~=
Temperature Factor - XT . TC (Z)
.00006 ~ ZNRZQXE Failures/106 Hours

Quality Factor - ~ Quality !
7CQ
25 30 35
40
45 50 55 60 % 75
1.0 1.3 1.6 1.9 2.4 2.9 3.5

4.2 5.0
80 85 90 95 100 105
110
115 120 125
8.3 9.8 11 13 15 18 21 24
27 31
MIL-SPEC Lower
I
I
1
3
Envirmment Environment
Factor - n=
~E
6.0 7,1
GB GF GM
1.0
2.0 8.0
4.0
\
Tc = Case Temperature (C)
N~ Nu
14 4.0 8.0 9.0 18 19 .50 14 28 510
Ic
NOTE: follows: TC TA = = TA + 55 (S) Ambient Temperature (C) Operating Power Package Rated Power If Tc is unknown, it can be estimated as IF
Uc
UF RW
SF
MF ML
s=
Any device operating at TC > 125C is overstressed.
c,
Number of Resistors Factor - ~NR
I
I
NR = Number of Film Resistorsin Use I

NOTE: Do not include resistors that are not used. I
9-6
MIL-HDBK-217F
9.5 SPECIFICATION MIL-R-39005 MIL-R-93 STYLE RBR RB
RESISTORS,
FIXED,
WIREWOUND
DESCRIPTION Fixed, Wlrewound, Accurate, Established Reliability Fixed, Wirewound, Accurate
Xp = lbnRZQnE Failures/l OGHours

Base Failure Rate - ~ Quality Factor - ~ Quality
7tQ
str13s TA (W)
0 % 30 40 50 60 70 80 90 100 110 120 130 140 m ~. .0031 exp (T+273)loexpp(T;g3) 398 )15
.1
.0033 .0033 .0034 .0034 .0035 .0037 .0038 .0041 .0044 .0048 .0055 .0065 .0079 .010 .014
.3
.0037 .0038 .0039 .0040 .0042 .0043 .0046 .0049 .0053 .0059 .0068 .0080 .0099 .013
.5
.0CM5 .0047 .0048 .0050 .0052 .0055 .0059 .0064 .0070 .0079 .0092 .011 .014 .018
.7
.0s7 .0059 .0062 .0066 .0070 .0075 .0081 .0089 ,0099 .011 .013 .016 .021 .028
.9
s
.0075 .0079 .0084 .0090 .0097 .011 .012 .013 .015 .017 .020 .025 .033 R
.030 .10 .30 1.0 5.0

15
P M MIL-R-93 Lower
Environment Factor - XE Environment
GB GF
2.0 11 5.0 18 15 18 28 35 27
Ts=
Ambient Temperature (oC) Ratio of Operating Power to Rated Power
GM
N~ Nu
Resistance Resistance
Factor - ~R
AC
Range (ohms)
~R 1.0
1.7 3.0 5.0
IF *UC
Up to 10K
> 10Kto >lOOKtol >IM 100K M
*UF
%w
SF MF
ML
.80
14 38 610
c,
9-7
I
4
,, . .
,,
MIL-HDBK-217F
9.6
RESISTORS,
FIXED,
WIREWOUND, STYLE
POWER DESCRIPTION Fixed, WireWound, Power Type, Established RelkbNty Fixed, Wirewouruf, Power Type
SPECIFICATION MIL-R-39007 MIL-R-26
hb7c#Q7t~ Failures/l OGHours

Resistance Factor - ZR
.7 .9 .021 .024 .027 .031 .035 .ti 74 1.0 78 1.0 1.0 1.0 1.2 1.2 1.2 1.6
Base Failure Rate - &. Stress TA (C) .1

.0042 .0045 .0048 .0052 .0056 .0081 .0066 .0072 .0078 .0085 .0093 .010 .011 .012 .014 .015 .017 .019 .021 .023 .026 .029 .033 .037 .042 .047 .054 .061 .06 .079 .091 .10 .3 .0062 .0068 .0074 .0081 .0089 .0097 .011 .012 .013 .014 .016 .018 .020 .022 .025 .028 .032 ,036 .040 .046 .052 .059 .068 .077 .088 ,10 .5 .0093 .010 .011 .013 .014 .016 .017 .020 .022 .025 .028 ,031 .036 .040 .046 .052 .060 .068 .078
(MIL-R-39007) Re istan ) Ra[ up qs00 bsoc 1:

1.0 71 1.0 1.0 1.0 1.2 1.6 1.0
>1K
w
>Iw
* >19(
1: 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 X% 210 220 230 240 250 260 270 280 290 300 310
.014 .016 .017 .020 .022 .025 .028 .032 .037 .042 .048 .055 .063
Siyte
s
7!3( 1.2
*75 KkJ 1* 1.6
I&
1.6
&
1.6 NA
1.2
1.6
NA
N/l
1.0
80 1.0 81 1.0 82
1.2
1.6
1.6
NA
NA
NA
NA
1.6
NA
NA
NA
NA
NA
NA
1.6
1.6
NA
NA
NA
NA
NA
1.0
84
1.0
1.1
1.2
1.2
1.6
NA
NA
1.0
89
1.0
1.4
NA
NA
NA
NA
MA
Quality Factor - nQ
Quality
KQ
s
R
~-M148eXP(~)2ex@) (=))
.03 .10 .30 1.0 5.0 15
P
T= s= Ambient Temperature (C) Ratio of Operating Power to Ftatad Power
M MIL-R-26
Lower
NOTE: Do not use MlL-R-39oo7 Resistors below the line. Points below are overstressed.
Y-u
--
MIL-HDBK:217F
9.6
RESISTORS,
FIXED,
WIREWOUND,
POWER
Resistanm
Factor - XR
I
Environment Factor - ~ Environment

]ms) *la b I!iw 1.2 1.6 M E E NA NA NA NA NA K NA NA $ NA NA NA 1.6 1.6 1.6 NA K
(MIL-R-2 Resistance mge

MIL-R-26
~E 1.0 2.0 10 5.0 16 4.0
up s 100 1.0 t .0 1.0 1.0 1.0 1.0 1,0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
>100 m IK
>1 K
to ICM 1.0
>1OK
to
100K
>150K
GB GF % NS NU
J%
1.6 NA NA E
10 Rwll
Rw RW12 Rw 13 Rw 14 Rw 15 RW16 RW20 Rw 21 KE RW 24 RW 29 RW30 Rw 31 RW32 ZE EE Rw 37 E: Rw 47 RW55 RW56 RW 67 l%: Rw 70 Rw 74 Fw 70 R: RW 81
1.0 1.0 1.0 1.0 1.0 1.0 1.2 1.0 1.0 1,0 1.0 1.0 1.0 1.2 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.2 1.0 1.0 1.0 1.2 1.2
1.0
1.2 1.6 2.0 2.0 2.0 NA NA 2.0 1.6 1.4 1.2 I& NA
NA 1.4
1.0 1.2 1.0 1.0 ;:: 1.6 1.2 1.2 1.0 1.0 1.4 1.6 1.4 1.2 1.0 1.0 1.0 1.2 1.2 1.0 1.0 1.0 1.4 1.2 1.0 1.0 NA 1.4 ;:: 1.4 1.6 NA
Ic
K NA WA NA NA NA E NA NA E NA $ NA 2.0 2.0 NA NA K NA NA K K NA
IF Uc *UF Rw SF MF ML CL
8.0 9.0 18 23 .30 13 34 610
1.4
1.4 1.5
1.6 1.4 1.4 1.4

2.4 2.6 E NA W 1.6 1.6 NA NA NA
E NA E NA E
9-9
MIL-HDBK-217F
9.7
RESISTORS,
FIXED,
WIREWOUND, STYLE RER RE
POWER,
CHASSIS
MOUNTED
SPECIFICATION MIL-R-39009 . MIL-R-18546
DESCRIPTION Fixed, Wirewound, Power Type, Chassis Mounted, Established Reliability Fixed, Whewound, Power Type, Chassis Mounted
Base Failure Rate - ~ stress

TA (Z) .1
Resistance Factor - ZR .7 .0076

.0087 .0100 .012 .013 .016 .018 .021 .024 .028 .032
.3 .0032
.0036 .0040 .0045 .0050 .0056 .0063 .0070 .0079 .0088 .0098 .011 .012 .014 .015 .017 .019 .022 .024 .027 .030
.5 .0049
.0056 .0064 .0072 .0082 .0093 .011 .012 .014 .016 .018 .020 .023 ,026 .030 .034
.9
.012 .014 .016 .019 .022 .026
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250
.0021
.0023 .0025 .0020 .0031 .0034 .0037 .0041 .0045 .0050 .0055 .0060 .0066 .0073 .0081 .0089 .0098 .011 .012 .013 .014 .016 .017 .019 .021 .023
(Characteristic G (tnductive Winding ti MlL-R-l 8546 and lL-R- 1009) Kmotr hms mos I 10 +*1 T + Rated XIK c) to Styte Powar 2% IK IOK z
RE 60 RER60 RE 65 RER65 RE 70 RER70 RE 75 RER75 5 1.0
1.2
1.2
1.6
1.6
NA
NA
10
1.0
1.0
1.2
NA
NA
20
1.0
1,0
1.2
1.2
1.6
NA
30
1.0
1.0
1.0
1.1
1.2
1.6
RE 77 RE 80
75 120
1.0 1.0
1.0 1.0
1.0 1.0
1.0 1.0
1.2 1.2
1.6 1.6 I
Resistance Factor - XR (Charaderistic N (NoninductiveWinding)of MIL-R-18546 and Noninc ctively Woun Styles of MIL 3-39009)
Resi: mce Ran e Raled 4 Styb RE 60 RER40 RE 65 RER45 RE 70
Ptxer
-qr
T!mi 4
to lK 1.2
52)
1.0 1.0
E
1.6 1.6
20K
1;
NA NA
NA
~ = .00015 exp 2.64 ( (%)ex(aa)
T=
s=
10
1.2
NA
20
1.0
1.0
1.2
1.6
NA
NA
RER50 RE 75 RER55
30 1.0 1.0 1.1 1.2 1.4
NA
75 RE 80 120
1.0 1,0
1.0 1.0
1.0 1,0
1.2 1.1
1.6 1.4
NA NA
!.
,,.
MIL-HDBK-217F
9.7
RESISTORS,
FIXED,
WIREWOUND,
POWER,
CHASSIS
MOUNTED
Quality Faotor - ~ Quality s R P M

MIL-R-18546
Environment GB
.030 GF .10 GM .30 1.0 5.0 15 Ns Nu AIc IF Uc *UF RW SF MF ML c~
~E 1,0
2.0 10 5.0 16 4.0 8.0 9.0 18 23 .50 13 34 610
Lower
9-11
MIL-FIDBK-217F
SPECIFICATION M IL-T-23648
STYLE RTH
DESCRIPTION Thermally Sensitive Resistor, Insulated, Bead, Disk and Rod-Types
Xp = &QzE
Failures/l OG Hours
Base Failure Rate - ~ Type Bead (Styles 24, 26,28,30,32, 34, 36, 38, 40) Disk (Styles 6,8, 10) A~ .021
Environment Factor - xz
L
Environment
~E
GB GF
%
1.0 5.0 21 11 24 11 30 16 42 37 .50 20 53 950
.065
Ns Nu
Rod
(Styles 12, 14, 16, 18, 20, 22, 42)
.105 Ic IF Uc UF Quality Factor - fl~ RW SF

~Q
MF
1 15
ML c,
9-12
....,. i
.. . *.
. ..
.. . .
.,.
. . . .. .
.,, ..
MIL-tiDBK-217F
9.9 SPECIFICATION MIL-R-39015 MIL-R-27208 STYLE Iv-R RT
RESISTORS,
VARIABLE,
W! REWOUND
DESCRIPTION Variable, Wtrewound, Lead Screw Actuated, Established Reliability Variable, Wkewound, Lead Screw Actuated
Xp = kbfiTAp~XRZvXQzE Failures/l OG Hours

stress
Potentiometer Taps Factor - q~o=

snr g
.1
.3
.011 .012 .012 ,013 .015 .016 .018 .020 .023 .027 .032 .038 .047 .059
.5
.013 .014 .015 .017 .018 .020 .023 .026 .03 .035 .042 .051
.7
.016 .017 .019 .021 .023 .026 .029 .033 .039 .046 .055
.9
.020 .021 .024 .026 .029 .033 .037 .043 .050 .060
N TAPS
TAPS
N TAPS
TAPS
N TAPS
TAPS
I
;
o
30 40 50 60 70 80 90 100 110 120 130 140
.0089 .0094 .010 .011 .012 .013 ,014 .016 .018 .021 .024 .029 .035 .044 .056
3 4 5 6 7 a 9 10 11 12
1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1 2.3 2.5
13 14 15 16 17 18 19 20 21 22
2.7 2.9 3.1 3,4 3.6 3.8 4.1 4.4 4.6 4.9
23 z E :: 30 31 32
5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 7.7 8.0
2 =
%APS =
2S
+ 0.792
l--
. %
0062(=?X(S (T=);
Ambient Temperature (C) Ratio of Operating Power to Rated Power. See Section 9.16 for Calculation of S.
TAPS
Number of PotentiometerTaps, includingthe Wiper and Terminations. ~ I Voltage Factor - xv
T s
Applied Rated Otoo.1 >0.1 to >0.2 to >0.6 to >0.7 to >0.8 to >0.9 to
Voltage* Voltage 0.2 0.6 0.7 0.8 0.9 1.0
% 1.10 1.05 1.00 1.10 1.22 1.40 2.00
Resistance Factor - XR
Resistance Range (ohms) 10t02K >2K to 5K >5K to 20K
%
1.0 1.4 2.0
w
R
Applied
= =
~RpApplied Nominal Total Potentiometer Resistance Power Dissipation 40 Volts for RT 26 and 27 90 Votts for RTR 12, 22 and 24; RT 12 and 22
Applied Rated v Rated
= =
MIL-HDBK-217F
9.9
RESISTORS,
VARIABLE,
WIREWOUND
QualityFactor - nfi
u
Environment
%Q
Factor - KG
L
Quality
Environment
% GF
~E
s
R P M MIL-R-27208 Lower
.020 .060
1.0 2.0 12 6.0 20 5.0 8.0 9.0 15 33 .50 18 48 870
%... .20 .60 3.0 10

Ns
Nu
Ic
IF Uc
UF RW SF MF ML cl
9-14
I /
.!
.,,
1 9.10 SPECIFICATION MIL-R-12934 STYLE RR
MIL-HDBK-217F
RESISTORS,
VARIABLE,
WIREWOUND,
PRECISION
DESCRIPTION Variable, WIrewound, Precision

stress
Resistance Factor .7
.13 .14 .16 .17 .20 .22 .26 .30 .36 .44 .54
.1
o .10 .11 .12 .13 .14 .15 .17 .19 .21 .24 .28 .33 .40 .49 .60
.3
.11
.12 .13 .14 .15 .17 .19 .22 .25 .30 .35 .42 .52 .65
.5
.12 .13 .14 .16 .J7 .20 .22 .26 .30 .36 .44 .54
.9
.14 .15 .17 .19 .22 .26 ,30 .36 .43 .54
Resistance Range (ohms) 100 to IOK >?OK to 20K >20K to 50K >50K to 10OK
>100 >200K K
R 1.0
1.1 1.4 2.0 2.5
30 40 50 60 70 80 90 100 110 120 130 140
to 200K to 500K
3.5
Potentbrneter Taps Factor \

-.0735 exp ( 1.03 (~ )4.45)X
TAPS
?AP:
TAPS 5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 ;;:
TAPS
TAPS
1.0
1.1
exp((z%) T= s. (*)351) 1.2 1.4 1.5 ;:: 2.1 :::
Ambient Temperature ~C) Ratio of Operating Power to Rated Power. See Section 9.16 for Calculating S.
13 14 15 16 17 18 19 20 :; 3
$:; ::: 3.6 3.8 4.1 4.4 :::
ConstructionClass Factor - z=
b f
ConstructionClass
RR0900AZA9J1 3 4 03
7K*
2.0 1.0 3.0 %APS TAPS = -
M5
25
.(-),,,
Number of Potentiometer Taps, including the W@er and Terminations.
1.5
Sample type designation to show how construction class can be found, In this example the construction cJass is 2. Construction class should always appear in the eighth position.
MIL-HDBK-217F
9.10
RESISTORS,
VARIABLE,
WIREWOUND,
PRECISION
Vottage Factor - ~
Applied Rated o Voltage voltage % MIL-SPEC 1.10
Quality Factor - XQ Quality
UQ
2,5 5.0
to 0.1
>0.1 to 0.2 >0.2 to
Lower
1.05 1.00
0.6
>0.6 to 0.7 >0.7 to 0.8 >0.8 to 0.9 >0.9 to 1.0
1.10 1.22 1.40 2.00
Environment
L
GB GF GM Ns
1.0 2.0 18 8.0 30 8.0 12 13 18 53 .50 29 76 1400
Applied
== Nominal Total Potentiometer Resistance
Nu *IC IF *UC *UF
RP
Applied v Rated
Power Dissipation 250 Votts for RR0900, RRI 100, RR1300, RR2000, RR3000, RR31OO, RR3200, RR3300, RR3400, RR3500
*RW SF MF ML CL
Rated
423 Volts for RR3600, RR3700 500 Votts for RR1 000, RR1 400, RR21 00, RR3600, RR3900
Rated
9-16
MIL-HDBK-21
;F
9.11 SPECIFICATION MIL-R-19 STYLE RA
RESISTORS,
VARIABLE,
WIREWOUND,
SEMIPRECISION
DESCRIPTION
MIL-R-39002
RK
Variable, Wirewound, Semiprecision (Low Operating Temperature) Variable, WWnvound, Semiprecision
kp = Base Failure Rate - ~
+)~A#Rf/nQn Failures/l
E
06 Hours Resistance Factor - ZR
A(~)
0 10 20 30 40 50 60 70
.1 .055 .058 .063 .069 .076 .085
.3 .063 .069 .076 .086 .098 .11
stn?ss .5 .072 .081 .092 .11 .13 .15
.7 .083 .095 .11 .13 .16 .20 .9 .095 .11 .13 ,17 .21 .27
Resistance Range (ohms) 10t02K

>2K
%
1.0
to 5K
1.4
2.0
>5K to 10K
Potentiometer
N
Taps TAPS 13 14 15 16 17 18 19 20 21 22
Factor - ~APq TAPS 2.7 2.9 3,1 3.4 3.6 3.8 4.1 4.4 4.6 4.9
. . ..TAPS 5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 7.7 8.0
TAPS 3 4 5 6 7
TAPS 1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1 2.3 2.5
N TAPS 23 24 25 26 27 28 29 30 31 32
I
I
80 90 100 110 120 130 )
:6,1= .16 .19 .24 .31 .42
.26 .34 .45
.42 .59 .85
.69 1.0
1.1
= .0398 exp
(-
514
8 (%)5). ) 9 10 11 12
e+% T= s-
(*)446
Ambient Temperature (C) Ratio of Operating Power to Rated Power, See Section 9.16 for S Calculation.
2 NOTE: Do not use MlL-R-l 9 below the line. Points below are overstressed. MS ?APS TAPS = 25 + 0.792
Number of Potentiometer Taps, including the Wiper and Terminations.
9-17
MIL-HDE3K-217F
9.11
RESISTORS,
VARIABLE,
WIREWOUND,
SEMIPRECISION
Vottage Factor - ~ Applied Voltage* Rated Voltage Otoo.1

>0.1 to 0.2 >0.2 >0.6 >0.7 >0.8
Environment
Factor - z=
L
Environment
%
1.10 1.05 1.00 1.10 Alc 8.0 12 N/A N/A 38 .50 N{A N/A NIA 1.22 IF 1.40 2.00 %c UF RW
GB GF GM
N~ Nu
1.0 2.0 16 7.0 28
to 0.6 to 0.7
to 0.8 to
0.9
>0.9 to 1.0
q V
SF Applied =
MF Nominal Total Potentiometer Resistance CL ML
Rp
Applied v Rated
Power D~ssipation 50 Votts for RA1o 75 Volts for RA20X-XC, F 130 Volts for RA30X-XC, F 175 Volts for RA20X-XA 275 Volts for RK09 320 Volts for RA30X-XA
Quality Factor - n=
Quality
MIL-SPEC Lower 2.0 4.0
9-18
#u
.UUIE
.Ulz
.UEU
MIL-HDBK-217F
9.12 SPECIFICATION MIL-R-22 STYLE RP %=
RESISTORS,
VARIABLE,
WIREWOUND,
POWER
DESCRIPTION
Variable, Whwound, Power Type

H..,.
&~Ap#R~ZcZ&E Failures/IO

Sm?ss TA (%) 0 10 20 30 40 50 60 70 80 90 100 110 120 .1 .064 .067 .071 .076 .081 .087 .095 .10 .12 .13 .15 .17 .20 ~ 11 \ = .0481 exp ( 334 (T:%)46)X 12 2.3 2.5
Resistance Factor - nR .7
.097 .11 .12 .13 .15 .17
.3
.074 .078 .084 .091 .099 .11 .12 .14 .15 .18
.5
.084 .091 .099 .11 .12 .14 .15 .18
.9
.11 .12 .14 .16
Resistance Range (ohms) 1 to 2K

>2K
tO
1.0 5K 1.4
2.0
>5K to 10K
Potentiometer
N
Taps
Factor - ~APS TAPS 2.7 2.9 3.1 3.4 3.6 3.8 4.1 4.4 4.6 4.9
., .,TAPS 5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 7.7 8.0
TAPS 3 4 5 6 7 8 9
TAPS 1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1
N TAPS 13 14 15 16 17 18 19 20 21 22
N TAPS 23 24 25 26 27 28 29 30 31 32
10
exp(+
(TJ~~)2083) 2 us + 0.792
T. s=
Ambient Temperature (C) Ratio of Operating Power to Rated Power. See Section 9.16 for S Calculation.
%APS TAPS
= =
25
Number of Potentiometer Taps, including the W@er and Terminations
9-19
.-.
.A
--,
I
I
9.12 RESISTORS, VARIABLE,
MIL-HDBK-217F
WIREWOUND,
POWER
Voltage Factor - ~ Applied Voltage* Rated Voltage

Otoo.1 >0.1 to 0.2 Quality % MIL-SPEC 1.10 Lower 1.05 1.00 1.10
Quality Factor - XQ
I
~Q
2.0 4.0
I
I Environment Factor - ZE
>0.2 to 0.6 >0.6 to 0.7

>0.7 to 0.8
\
1.22 1.40 2.00
Environment
GB GF
~E
1.0 3.0 16 7.0 28 8.0 12 N/A N/A 38 .50 N/A WA NIA b
>0.8 to 0.9
>0.9 to 1.0
GM Ns
q v
Rp
Applied
= =
~RPpApplied Nominal Total Potentiometer
Nu Alc IF Uc RP1 O UF *RW
Resistance Applied Rated = = = Power Dissipation
250 Volts for RP06, 500 Votts for Others
SF I MF ML
Construction Construction Class Enclosed Unenclosed
Class Factor - ~ Style Xc
cL
RP07,
RP1l,
RP16 I
All Other Styles are Unenclosed
II
20 1.0
9-20
MIL-HDBK-217F
9.13 SPECIFICATION MIL-R-22097 STYLE RJ
RESISTORS, DESCRIPTION
VARIABLE,
NONWIREWOUND
MIL-R-39035
RJR
Variable, Nonwifewound (Adjustment Types) Variable, Nonwirewound (Adjustment Types), Established Reliability Failures/l 06 Hours Resistance Factor - mR
% = b%APSR%%E
Base TA (%) .1 .021 .021 .022 .023 .024 .025 .026 .028 .030 .034 .038 .043 .050 .060 .074
Failure Rate - & .3

.023 .023 .024 .025 .026 .028 .030 .032 .035 .039 .044 .051 .060 .073
smss .5
.024 .025 .026 .028 .029 .031 .033 .036 .040 .045 .052 .060
.7
.026 .027 .029 .030 .032 .035 .038 .042 .046 .053 ,061
.9
.028 .030 .031 .033 .036 .039 .043 .047 .053 .061
Resistance Range (ohms) 10 to 50K >50K to 100K >IOOK to 200K >200K to 500K
>500K to 1 M
R 1.0 1.1 1.2 1.4

1.8
0
;: 30 40 50 60 70
% 100 110 120 130 140
Potentiometer
N TAPS TAPS N
Taps
Factor TAPS
%APS
N
TAPS
TAPS 23 24 25 26 27 28 29 30 31 32
TAPS 5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 7.7 8.0
I
I
3 \ = .019 exp (. 445 (Il&y)x 4 5 .xP(&(T;;r) 246) 6 T= s = Ambient Temperature (C) Ratio of Operating Power to Rated Power. See Section 9.16 for S Calculation. 7 8 9 10 11 12
1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1 2.3 2.5
13 14 15 16 17 18 19 20 21 22
2.7 2.9 3.1 3.4 3.6 3.8 4.1 4.4 4.6 4.9
2 MEf hAPS TAPS = = 25 + 0.792
Number of Potentiometer Taps, , including the Wiper and Terminations.
9-21
1 I
MIL-HDBK-217F
9.13
RESISTORS,
VARIABLE,
NONWIREWOUND
Voltage Factor - ~ Applied Voltage Rated Voltage Oto 0.8 >0.8 to 0.9 >0.9 to 1.0 *v 1.00 1.05 1.20
Environment Factor - xc
L
Environment
GB GF %
N~ Nu
~E
1.0 3.0 14 6.0 24 5.0 7.0 12 18 39 .50 22 57 1000
Applied
== = Nominal Total Potentiometer Resistance
Alc IF
Rp
AUc UF
Applied v Rated
= =
Power Dissipation RW 200 Votts for RJ and RJR26; RJ and RJR50 SF MF ML * c1
300 Volts for All Others
Quality Factor - G
Quality
s R P M MIL-R-22097 Lower .020 .060 .20 .60 3.0 10
9-22
__
. _ _
MIL-HDBK-217F
9.14 SPECIFICATION MIL-R-94 STYLE RV
RESISTORS, DESCRIPTION
VARIABLE,
COMPOSITION
Variable, Composition, Low Precision Failures/l OG Hours Resistance Factor - Xn Resistance Range (ohms)
.7 .9 .038 .042 .048 .056 .067 .082 .11 Potentiometer Taps
TAPS
Lp = #TAp&#f/nQnE
Base Failure Rate - ~ TA (%) o 10 20 30 40 50 60 70 80 90 100 110 .1 .027 .028 .029 .031 .033 .036 .039 .045 .053 .065 .084 .11 .3 .030 .031 .033 .036 .039 .044 .050 .060 .074 .096 .13 Stress .5 .032 .034 .037 .041 .047 .054 .065 .08 .10 ,14
..
.035 .038 .042 .048 .056 .067 .083 ,11 .15
50 to 50K
1.0 1.1 1.2 1.4 1,8
>50K to lOOK >1OOKto 200K >200K to 500K >500K tO 1 M
Factor - ~AP: TAPS 2.7 2.9 3.1 3.4 3.6 3.8 4.1 4.4 4.6 4.9
N
.14
N
TAPS 3 4 5 6
TIW 1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1 2.3 2.5
TAPS 23 24 25 26 27 28 29 30 31 32
13 14 15 16 17 18 19 20 21 22
TAPS 7 5.2 5.5 5.8 6.1 6.4 6.7 7.0 7.4 7.7 8.0
.0246
13XP
[. 459
(*)9.3-)X
)
7 0
.xp(&(w)
9 10 11 12
Ts =
Ambient Temperature (C) Ratio of OperW!ng Power to Rated Power, See Section 9.16 for S Calculation.
?APS TAPS
MEr+07,2
25 . Number of Potentiometer Taps, including the Wiper and Terminations.
9-23
MIL-HDBK-217F
9.14
RESISTORS,
VARIABLE,
COMPOSITION
Voltage Factor - ~ Applied Voltage* Rated Voltage o to 0.8 >0.8 to 0.9 >0.9 to 1.0 % 1.00 1.05 1.20
Environment Factor - XE
Environment
~E
GB GF GM N~ Nu
1.0
2.0 19 8.0 29 40 65 48 78 46 .50 25 66 1200
Applied
-d Nominal Total Potentiometer Resistance
*IC IF
Uc *UF
Rp
Applied v Rated
. = = w = = = w =
Power Dissipation *RW 500 Volts for RV4X--XA8XB 500 Vofts for 2RV7X--XA&XB ML 350 Volts for RV2X-XA&XB cl 350 Votts for RV4X--XA&XB 350 Votts for RV5X--XA&XB 350 Volts for RV6X--XA&XB 250 Votts for RV1 X--XA&XB 200 Votts for All Other Types
SF
MF
Quality Factor - nO
MIL-SPEC
2.5 5.0
Lower
9-24
lvllL-t-fDBK-217F
9.15 SPECIFICATION MIL-R-39023
RESISTORS, STYLE RQ
VARIABLE,
NONWIREWOUND, DESCRIPTION
FILM
AND
PRECISION
MIL-R-23285
RVC
Variable, Nonwirewound, Film, Precision Vatiabie, Nonwirewound, Film
Lp = kbXTAp~ZRZvZQnE Base Failure Rate - ~

~RQ Stvle OnIv) TA (W) .1 .023 .024 .026 .028 .032 .037 .044 .053 .068 .092 .13 .20
Failures/l
OG Hours Base Failure Rate - ~
&iess
.5
.026 .029 .032 ,036 .041 .049 .060 .076 .10 .14
lRVP. .Shfk mlu) ) ,. . . . -., .-F !.,
.3
.024 .026 .029 .032 .036 .042 .051 .064 .083 .11 .17
.7
.028 .031 .035 .040 .047 .057 .070 .091 .12
.9
.031 .034 .039 ,045 .053 .065 .083 .11
TA (C)
.1 .028 .029 .030 .031 .032 .034 .036 .039 .043 .048 .055 .064 .077 .096 .12 .17 .24 .37
.3
.031 .032 .033 .035 .037 .040 .044 .049 .055 .063 .075 .091 .11 .15 .20 .29 .44
.5
.033 .035 .037 .040 .043 .047 .053 .060 .070 .083 .10 .13 .17 .23 .33 .50
.7
.036 .038 .041 .045 .050 .056 .064 .075 .09 .11 .14 .18 .25 .36 .53
.9
.039 .042 .046 .051 .058 .066 .078 .093 .11 .15 .19 ,26 .37 .55
0
10 20 30 40 50 % 80 90 100 110
0
;; 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
T+273 () h :.,;;; &F)
7.4
) T+273 () 398 (T;Y);3 7.9
T= s =
Ambient Temperature (C) Ratio of Ogmrating Power to Rated Power. See Section 9.16 for S Calculation.
%=
.0257 exp
q(a)
T Resistance Resistance Range Factor - ZR R 1.0 1.1 1.2 1.4 1,8 I s
= =
Ambient Temperature (C) Ratio of Operating Power to Rated Power. See Section 9.16 for S Calculation.
(Ohms)
Up to 10K >1 OK to 50K >50K >200K >lM to 200K tO 1 M
9-25
MIL-HDBK-217F
9.15
RESISTORS,
VARIABLE,
NONWIREWOUND, . . ..TAPS 5.2 5.5 5.8 6.1
FILM
AND
PRECISION
Quality Factor - TCO
Potentiometer Taps Factor - ~APq

N
TAPS 3 4 5 6 7 8 9
TAPS 1.0 1.1 1.2 1.4 1.5 1.7 1.9 2.1 2.3 2.5
TAPS 73 14 15 16 17 18 19 20 21 22
TAPS 2.7 2.9 3.1 3.4 3.6 3.8 4.1 4.4 4.6 4.9
TAPS 23 24 25 26 27 28 29 30 31 32
Quality
MIL-SPEC Lower 2 4
Environment 6.4 Environment 6.7 GB 7.0 7.4 GM 7.7 8.0 NS Nu *IC 2 d %APS TAPS = = 25 + 0.792 GF
Factor - XE ~E 1.0 3.0 14 7.0 24 6.0 12 20 30 39 .50 22 57 1000
10 11 12 w
IF %c
*UF RW
Number of Potentiometer Taps, including the Wiper and Terminations.
SF
Voltage Applied Rated Voltage Voltage Factor - ~ MF
v
1.00 1.05 1.20 r
ML c,
O to 0.8
>0.8 to 0,9
>0.9 to 1.0
q V
. Applied =
Rp
Nominal Total Potentiometer Resistance
Applied
Power Dissipation 250 Votts for RQ090, 110, 150, 200, 300
Rated
= a
500 Volts for RQ1 00, 160, 210 350 Votts for RVC5, 6
9-26
,.
MIL-HDBK-217F
9.16
CALCULATION
OF
STRESS
RATIO
FOR
POTENTIOMETERS
Stress Rat& (S) Calculationfor Rheostats
Stress Ratb (S) Cakulation for Potentiometers
Connected Conventionally
&
s-
mnax
%AffiEt)(maxr~ed)
s. EFF
APPLIED
x GANGED x RATED
Maxinwn ament Whii will

be passed through the rheosta in tho ckouft.
ImZIXrat~
Current rating of
the
Applied Vin
Equhmkmt owerinputtothe p potendometer henitis not w loaded(i.e.,wiper lead dkaommctod).Calcukte as follows: V2 in % InputVoltage
Nominal Total Potentiometer Resistance
potentiometer. H ourrent rating is not given, use:
&te@p P
Power Rating of Potentiometer
Rp
rated
Rp
Nominal TotalPotentiometer
Resistance
%ATED %4NGED
Power Rating of Potentiometer Factor to correct for the reduction in effective rating of the potentiometer due to the dose proxim~ uf two or more potentiometers when they are ganged together on a common shaft. see below. Correction factor for the electrical loading effect on the wiper oontact of the potentiometer. Its value is a function of the type of potentiometer, its resistance, and the bad resistance. See next page.
%ANGED
Factor to cxmect for the reduction in affective ratfng of the potentiometer due to the dose proximity of two or more potentiometer when they are ganged together on a cwnmon shaft. See bebw.
Ganged-Potentiometer FWOf
Number of Sections Single TW Three Four Five Six First Potentiometer Next to Mount 1.0 0.75 0.75 0.75 0.75 0.75 I Second in Gang 0.60 0.50 0.50 0.50 ().50 0.60 0.50 0.40 0.40 l-hkd in Gang
- ICG~GED Fourth in Gang Fifth in Gang Sixth in Gang
Not App Iioable Not Not 0.60 0,50 I 040
Applicable Applicable Not 0.60 050 Applicable 1 Not Applicable I 060
9-27
(
9.16 CALCULATION OF STRESS
,MIL-HDBK-217F
RATIO FOR POTENTIOMETERS
Loaded Potentiometer Derating Factor- ZEFF
Styk Constant - KH .,
Potentiometer
%1
0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 3.0 4.0 5.0 10.0 100.0 .04 .13 .22 .31 .38 .45 .51 .55 .59 % .80 .87 .90 .92 .96 1.00 0.3 .03 .09 .16 .23 .29 .35 .40 .45 .49 .53 .65 .73 .81 .86 ,88 .94 .99 0.5 .02 .05 .10 .15 .20 .25 .29 .33 .37 .40 .53 .82 .72 .78 .82 .90 .99 1.0 .01 .03 .05 .08 .11 .14 .17 %? .25 .36 .44 .56 .64 .69 .83 .98
MIL-SPEC MlL-R-l 9
MIL-R-22 MN-R-94 MlL-R-l 2934
Style Type RA
IW Rv RR1 000, 1001, 1003, 1400, 2100, 2101, 2102,2103
%
0.5 1.0 0.5 0.3
MIL-R-12934 MIL-R-22097 MIL-R-22097 MIL-R-23285
All Other Types RJll, RJ12
0.2 0.3 0.2 0.5 0.2 0.3 0.5 0.2 0.3 0.3 0.3 I
All Other Types
Rvc
RT22, 24,26,27 AH Other Types RK RTR 22,24 RTR12 RQ RJR
RL2
MIL-R-27208 MIL-R-27208
%FF
RL2 + KH (
RP2 + 2RPRL )
MIL-R-39002 MIL-R-39015 MJL-R-39015 MIL-R-39023 MIL-R-39035
RL
Load resistance (If RL is variable, use lowest value). RL is the total resistance between the wiper arm and one end of the potentiometer.
f%
%i -
Nominal Total Potentiometer Resistance Style -nstant. See KH
Table.
9-28
.--
MIL-HDBK-217F
9.17
Example Given:
RESISTORS,
EXAMPLE
Type RVISAYSA505A vartable 500K ohm resistor procured per MIL-R-94, rated at 0.2 watts is being used in a fixed ground environment. The resistor ambient temperature is 40C and is dissipating 0.06 watts. The resistance connected to the wiper contact varies between 1 megohm and 3 megohms. The potentiometer is connected conventionally without ganging.
The appropriate model for RV style variable resistors Is given in Sectbn 9.14. Based on the given infonnatbn the folbwing modei factors are determined fnm the tables shown in Seotbn 9.14 and by foiiowingthe procedure for determining electrical stress for potentiometers as desdbed in Section 9.16.
From Section
9.16
APPLIED EFF
.06W .62
1.0
KH . .5 for MIL-R-94 (Section 9.16 Tabie)

Not Ganged (Section 9.16 Table, Single Section,
%ANGED RATED
s
First Potentbmeter) .2W APPLIED ~EFF x GANGED x RATED .06 = (.62)(1.0)(.2)
= m
From Section
9.14
.047
1.4 1.0
TA = 40C, S Rounded to .5
500K ohms 3 Taps, Basic Single Potentiometer VRATED = 250 VOttS for RV1 prefu
1.0
VAPPLIED
= ~ (500,000)(.06) 173 = ~
~ 173 VOftS = q W
APPLJE#RATED 2.5
2.0
% TAPS%
(.047)(1.0)(1
V Q E
.4)(1 .0)(2.5) (2.0) = .33 Failures/l 06 Hours
9-29
MIL-HDBK-217F
10.1 SPECIFICATION MII--C-25 STYLE

CP
CAPACITORS,
FIXED,
PAPER,
BY-PASS
DESCRIPTION Paper, By-pass, Filter, Blocking,
DC
MIL-C-12889
CA
Paper, By-pass, Radio Interference Reduction AC
andl3-Zp = lbZCVXQnE
Failures/l

(T-125% Max Ra!ed)
(T.85c MaxRated)
(All MIL-G-12889:MIL-C-25 Stvles CP25. 26.27.28.29. 40, 41, 67, 69,70,72, 75, 76,77,78:80:81 i 82: Characteristics E. F)
(MIL-C-25 Styles CP 4,5,8,9, 10, 11, 12 13; Characteristic K)
S&
TA (%) .1
TA (%]
.1
.00086 .00087 .00087 .00088 .00089 .00091 .00095 .0010 .0011 .0014 .0019 .0030 .0063
.3
.0011 .0011 .0011 .0011 .0011 .0011 .0012 .0013 .0014 .0017 .0023 .0037 .0078
stress .5
.0035 .0035 .0035 .0035 .0036 .0037 .0039 .0041 ,0046 .0056 .0076 .012 .026
.7
.015 .015 .015 .015 .015 .016 .017 .018 .020 .024 .033 .052 .11
.9
.051 .051 .051 .051 ,052 .053 .056 .060 .067 .081 .11 .18 .37
.3 .0011
.0011 .0011 .0012 .0013 .0016 .0021 .0034 .0074
.5
.0036 .0036 .0037 .0039 .0044 .0052 .0069 .011 .024
.7
.015 .016 .016 .017 .019 .022 .030 .048 .10
.9
o .051 10 .052 20 .054 30 .057 40 .063 50 .075 60 .10 70 .16 80 .35 90 100
0
10 20 30 40 50 60 70 80
.00088
.00089 .00092 .00097 .0011 .0013 .0017 .0027 .0060
\=.00086[(~)5+
l]exp(2.5(~)18)
110 120
T= s =
Ambient Temperature (C) Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied D.C. vottage and peak A.C. voltage.
~=.ooW3[(5)5+ 1]-p(2..(~)8)
T. s Ambient Temperature (C) Ratio of Operating to Rated Vottage
Operating voftage is the sum of applied D.C. voltage and peak A.C. voltage.
1o-1
MIL-HDBK-217F
10.1
CAPACITORS,
FIXED,
PAPER,
BY-PASS
Capacitance Factor- WV -. Capacitance, C (@)

MIL-C-25* .0034 .15 2.3 16. MIL-C-12889 All
Environment
Factor - x_
c v
Environment
fiE
e~
0.7 1.0 1.3 1.6
1.0
2.0 9.0 5.0
GF GM
Nu
1.0 Ic IF
15 6.0 8.0 17 32 22 .50 12 32 570
Cv
= 1.2c095
*UC *UF %w
Quality Factor - Xfi Quality MIL-SPEC Lower 3.0 7.0
SF
MF ML CL
10-2
+.-
- ., .
... .,.
. ... . ... .. .
., .,.
,,,
.. ...
..
MIL-HDBK-217F
.10.2 SPECIFICATION MlL-C-l 1693 STYLE CZR and CZ
CAPACITORS,
FIXED,
PAPER,
FEED-THROUGH
DESCRIPTION Paper, Metallizecf Paper, Metallized Plastiq RFI Feed-Throuqh Established Reliability and
Non-Establi;ht?d Reliability Xp = kbZCvZQzE

Failures/l
06 Hours
Base Failure Rate - ~ ~= 150C Max Rated)
i~haraeinrktic .. ... P} ,-, ,-, ----. f
(T=85c MaxRated) (Char-enstics E, W) TA (C) o ;;

30 40 50 60 70 80
( .7 .020
.021 .021 .023 .025 .030 .039 .064 .14
.1 .0012 .0012
,0012 .0013 .0014 .0017 .0023 .0037 .0080
.3 .0014 .0015
.0015 .0016 .0018 .0021 .0028 .0045 .0099
.5 .0047
.0048 .0050 .0053 .0058 .0069 .0092 .015 .032
.9 .069
.070 .072 .076 .084 .10 .13 .21 .47
TA (%)
0
E 30 40 50 60 70 80 90 100 110 120 130 140 150
.1
.0012
.0012 .0012 .0012 .0012 .0012 .0012 .0012 .0013 .0013 .0015 .0017 .0022 .0033 .0058 .014
.3
.0014 .0014 .0014 .0014 .0014 .0015 .0015 .0015 .0016 .0017 .0018 .0022 .0028 .0040 .0072 .017
.5
.0047 .0047 .0047 .0047 .0047 .0048 .0048 .0049 .0051 .0055 .0060 .0071 .0091 .013 .024 .057
.7
.020 .020 .020 .020 .020 .020 .021 .021 .022 .023 ,026 .03 .039 .057 .10 .24
.9
.068 .068 .068 .068 .068 .069 .070 .071 .074 .079 .087 .10 .13 .19 .34 .62
~=.o.11,[(~) +1]..P(2.,(~)18)
T= s= Ambient Temperature (C) Ratio of Operating to Rated Voltage Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.

(T= 125C Max Rated) (Characteristic K) Sfmss .3 .5 .0014 .0014 ,0014 .0014 .0015 .0015 .0016 .0017 .0019 .0023 .0031 .005 .010 .0047 .0047 .0047 ,0047 .0048 .0049 .0052 .0055 .0062 .0075 .010 .016 .034 ~00115[(~)5+ T=
11expF5(-Y
Ambient Temperature (C) = Ratio of Operating to Rated Vottage
TA (C) o ;: 30 40 E 70 80 90 100 110
.1 .0012 .0012 .0012 .0012 .0012 .0012 .0013 .0014 .0015 .0019 .0025 .0040 .0084
.7
.020 .020 .020 .020 .021 .021 .022 .024 .027 .032 .044 .07 .15
.9
.068 .068 .068 .069 .070 .072 .075 .08 .09 .11 .15 .24 .49 s Operating voltage is the sum of applied D.C. vottage and peak A,C. voltage.
120
\=.00115[(~) T. s
+ l]w(25(Tjfl)18)
Ambient Temperature (C) Ratio of Operating to Rated Voftage
Operating vottage is the sum of applied D.C. voltage and peak A.C. voltage.
MIL-HDBK-217F
i
10.2
CAPACITORS,
FIXED,
PAPER,
FEED-THROUGH
Capadtance Capacitance, C (JAF) 0.0031 0.061 1.8 f
Factor-WV
Factor - XE
L
1.0 1.5
Quality Factor - XQ
Reliability
.70
GB
GF
1.0
2.0 9.0 7.0 15

6,0 8.0 17 28 22
GM
N~ Nu
v = 1.4c02
*IC
IF
*UC
*UF %w SF M Non-Established Lower
Quality
.50
1.0 3.0
MF ML c,
12 32
10
10-4
MIL-HDBK-217F
10.3 SPECIFICATION MIL-C-14157 MIL-C-19978 STYLE CPV CQR and C(2
CAPACITORS,
FIXED,
PAPER
AND
PLASTIC
FILM
DESCRIPTION Paper and Plastk Film, Est. Rel. Paper and Plastk Film, Est. Rel. and Non-Est. Ret.
1P = &cVZQnE Base Failure Rate - ~ (?-=65c MaxRated) (MIL-C-14157styleCPV07; MlL-C-l9978 Characteristics P, L]

stress TA ~) 0 ;: 30 40 50 60 .1 .00053 .00055 .00061 .00071 .00094 .0015 .0034 .3 .00065 .00069 .00075 .00088 .0012 .0019 .0042 .5 .0021 .0022 .0025 .0029 ,0038 .0061 .014 .7 .0092 .0096 .9 .031 .032 .036 .042 .055 .088 .20
Failures/l
Oe Hours Base Failure Rate - ~

(-r. e5chk Ratacf) ML-C-14157 StvleCPV17:
MIL@--19978 Characteristics E, F; G, M)
St?ess .1
.00051 .00052 .00054 .00057 .00063 .00074 .00099 .0016 .0035 .3 .00063 .00064 .00066 .00070 .00077 .00092 .0012 .0020 .0043 .5 .0021 .0021 .0022 .0023 .0025 .0030 .0040 .0064 .014 .7 .0089 .0090 .0093 .0099 .011 .013 .017 .028 .061 .9 .030 .030 .031 .033 .037 .043 .058 .093 .20
.011
.012
.016 .026 .059
~=..oo,[(~)+ 1].xp(2..(~)18)
TsAmbient Temperature (C) Ratio of Operating to Rated Voftage Operating voltage is the sum of applied D.C. vottage and pa ak A.C. voltage.
~-.wm[(~)s+ l]e.p(2.5(*)18)
Ambient Temperature (C) s Ratio of Operating to Rated Voltage Operating voltage is the sum of appiied D.C. voftage and peak A.C. voltage.
T-
Base Faibre Rate - ~
(T. 125oCMaxRated)
(MIL-C-141 57 StVta CPV09 and MlL-C-l 9978 Chara&teristics K, Q, S) Stress TA (C) .1 .3 .5 .7 .9 o 10 20 30 40 50 % 80 90 100 110 120 .00050 .00050 .00051 .00051 .00052 .00053 .00055 .00059 .00067 .00081 .0011 .0018 .0037 .00062 .00062 .00062 .00063 .00064 .00066 .00068 .00073 ,00083 .0010 .0013 .0022 .0045 .0020 .0020 .0020 .0021 .0021 .0021 .0022 .0024 .0027 .0033 .0044 .0071 .015 .0087 .0088 .0088 .0089 .009 .0092 .0096 .010 .012 .014 .019 .030 .064 .029 .029 .030 .030 .030 .031 .032 .035 .039 .047 .064 .10 .21
A (%)
o
Base Failure Rate - ~ (T= 170C Max Rated) (MIL-C-1 9978 Characteristic T) Stress .1 .3 .5 .7
.00050 .00050 .00050 .00050 .00050 .00050 .00051 .00051 .00052 .00054 .00056 .00060 .00067 .00079 .0010 .0015 .0026 .0061 .00062 .00062 .00062 .00062 .00062 .00062 .00063 .00063 .00065 .00066 .00069 .00074 .00083 .00098 .0013 .0018 .0032 .0075 .0020 .0020 ,0020 .0020 .0020 .0020 .0021 .0021 .0021 .0022 .0023 .0024 .0027 .0032 .0041 .006 .011 .025 1].xp(2.5(*)18) ,0087 .0087 .0087 .0087 .0087 .0088 .0088 .0089 .0091 .0093 .0097 .010 .012 .014 .018 .026 .046 .11
.9 .029 .029 .029 .029 .029 .030 .030 .030 .031 .031 .033 .035 .039 .046 .060 .087 .15 .36
Y
30 40 :: :: 90 100 110 120 130 140 150 160 170
~-.ooW[(~)5+ l]e.p(2.5(*)8)
T= s. Ambient Temperature (C) Ratio of Operating to Rated Vottage Operating voltage is the sum of applied D.C. voftage and peak A.C. voltage.
~=.0005[(~)5+
. T = Ambient Temperature ~C) s= Ratio of Operating to Rated Voftage Operating vottage is the sum of applied D.C. vottage and Desk A.C. voltaae.
10-5
MIL-HDBK-217F
10.3
CAPACITORS,
FIXED,
PAPER
AND
PLASTIC
FILM
-. Capacitance, C @F) *CV
Environment Environment GB
Factor - XE %E 1.0
MIL-C-14157: .0017 .027 .20 1.0
.70 1.0 7.3 1.6 .70 1.0 1.3 1.6
GF
2.0 8.0 5.0 14

4.0 6.0 11.0 20 20 .50 11 29 530
GM Ns Nu %c
IF *UC
MIL-C-19978: w .00032 .033 1.0 15.0

q
Cv = 1.6C013 7tcv = 1.3C 0.077
*UF *RW SF MF ML
Quality Factor - nQ Quality
~Q
.03
.10
s
R P M L MlL-C-l 9978, Non-Est. Rel.
.30
1.0
3.0 10 30
Lower
10-6
MIL-HDBK-217F
10.4 SPECIFICATION MIL-C-18312 MI L-C-39022
CAPACITORS,
FIXED, STYLE CH CHR
METALLIZED
PAPER,
PAPER-PLASTIC
AND
PLASTIC
DESCRIPTION Metallized Paper, Paper-Plastic, Plastic MetalJized Paper, Paper-Plastic, Plastic, Established Reliabifii
kp = kbTCCvXQxE Failures/l Base Failure Rate - ~ (T-85c MaxRated) (MIL-C-39022Charactertatic and 12 (50 Voltsrated]. 9
Chara
~ (%)
o 10 20 30 40 50 60 70 80
eristic 49; and MlL-C-l 8312 Characteristic R) stress .1 .5 .7 .9 .3
(T=1250CMax Rated) (MIL-C-39022 Char~eristic 9 and 12 (above 50 Votts ratedl Characteristics 1.10, 19, 29, 59; and .MlL-C-l8312 Chara%istic N) Strass .1 .3 .7 .9 .5 TA (~) o .00069 .00069 .00070 .00070 .00071 .00073 .00076 .00082 .00092 .0011 .0015 .0024 .0051 .00086 .00086 .00086 .00087 .00088 .00090 .00094 .0010 .0011 .0014 .0019 .0030 ,0063 .0028 .0028 .0028 .0028 .0029 .003. .0031 .0033 .0037 .0045 .0061 .0098 .020 .012 .012 .012 .012 .012 .013 .013 .014 .016 .019 .026 .042 .088 .041 .041 .041 .041 .042 .043 .04s .048 .054 .065 .088 .14 .30
.00070
.00072 .00074 .00078 .00086 .0010 .0014 .0022 .0048
.00087 .00089 .00091 ,00097 .0011 .0013 .0017 .0027 .0059
.0029 .0029 .0030 .0032 .0035 .0041 .0055 .0089 .019
.012 .012 .013 .014 .015 .018 .024 .038 .084
.041 .042 10 .043 20 .046 30 .051 40 .06 50 .08 60 .13 70 .28 80 90
~=.WW9[(~)5+
l]exp(2.5
(=)18) 100 110 120
T. s-
\=.00069[(~)+ T= S =
l]exP(2.5
(=)18)
Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage.
MIL-HDBK-217F
10.4
CAPACITORS,
FIXED,
METALLIZED
PAPER,
PAPER-PLASTIC
AND
PLASTIC
Capadtance
Factor - wv
Emkmment Factor -xc

b
Capacitance, C @F)
0.0029 0.14 2.4
c v
.70 1.0
Environment GB GF %
~E 1.0 2.0 8.0 5.0 14 4.0 6.0 11.0
1.3
NS Nu *IC IF
Zcv = 1.2C
0.092
Quality Factor - Xn
u
*UC
Quality
7CQ
0.03 .10 .30 1.0 3.0 Non-Est. Rel. 7.0 20
*UF RW
20 20 .50 11 29 530
s
R P M L MIL-C-18312, Lower
SF MF ML CL
MIL-HDBK-217F
10,5 SPECIFICATION MIL-C-55514
CAPACITORS, STYLE
CFR
FIXED,
PLASTIC
AND
METALLIZED
PLASTIC
DESCRIPTION
Plastic, Metallized Plastic, Est. Rel.
Xp = kbXcvXQzE
Failures/l
OG Hours
Base Failure Rate - ~ (T= 12SOC Max Rated)

(Characteristics M, N)
(Charadari@im.-. . 0 -, \ -. -------R., !%) , - t
TA (%)
o 10 20 30 40 50 60 70 80
.1
.0010 .0010 .0011 .0011 .0012 .0015 ,0020 .0032 .0069
.3
.0012 .0013 .0013 .0014 .0015 .0018 .0024 .0039 .0085
.5
.0041 .0042 .0043 .0045 ,0050 .0059 .0079 .013 .028
.7
.018 .018 .018 .020 .022 .026 .034 .055 .12
.9
.059 .060 .062 .066 .073 .086 ,11 .18 .40
TA (C)
0 10 20 30 40 50 60 70 80 90
.1
.00099 .0010 .0010 .0010 .0010 .0011 .0011 .0012 .0013 .0016 ,0022 .0035 .0073
.3
.0012 .0012 .0012 .0012 .0013 .0013 .0014 .0015 .0016 .0020 .0027 .0043 .0090
Strws .5
.0040 .0040 .0041 .0041 .0041 .0043 .0044 .0048 .0054 .0065 .0087 .014 .029
.7
.017 .017 .017 .018 .018 .018 .019 .020 .023 .028 .038 .06 .13
.9
.058 .058 .059 .059 .060 .062 .064 .069 .077 .094 .13 .20 .43
~=.00099[(:)5+
l]exP(2.5
(%)18)
100 110
T=
s=
120
Operating vottage is the sum of applied C).C. voftage and peak A.C. voltage,
\=.00099[(;)5+
1].XP(2.5
(-)18)
T= s-
Operating vottage is the sum of applied D.C. voltage and peak A.C. voftage. i
,..
. .
MIL-J+DBK-217F
10.5
CAPACITORS,
FIXED,
PLASTIC
AND
METALLIZED
PLASTIC
Capacitance Factor - WV Capacitance, C (jLF)

0.0049 0.33 7.1 38. 0.085
L
~cv
.70 1,0 1.3 1.5
Environment GB GF GM Ns Nu Alc % %c
*UF
~E 1.0 2.0 10 5.0 16 6 11 18

30
23 .50 13 34 610
7CCV=1.1 C
Quality Factor - ZQ Quality
~Q
.030 .10 .30 1.0
10
RW SF MF ML cL
s
R P M Lower
1o-1o
,--
nI
--A
A.-
MIL-HDBK-21
7F
10.6 SPECIFICATION MIL-C-63421 STYLE
CAPACITORS,
FIXED,
SUPER-METALLIZED
PLASTIC
DESCRIPTION
CRH 1P = kbXCvZQnE
Super-Metallized Plastic, Est. Rel. Failures/l OG Hours

Capacitance Factor - WV
t Capacitance, C (vF)
(T= 125C Max Rated) stress .1 .3 .5

o :: 30 40 50 60 70 80 90 100 110 120 .00055 .00055 .00056 .00056 .00057 .00058 .00061 .00065 .00073 .00089 .0012 .0019 .0040 .00068 .00068 .00069 .00069 .00070 .00072 .00075 .00081 .00091 .0011 ,0015 .0024 .0050 ,0022 .0022 .0023 .0023 .0023 .0024 .0025 .0026 .0030 .0036 .0049 .0078 .016
Cv
.64 1.0 1.3 1.6
.7
.0096 .0096 .0097 .0098 .0099 .010 .011 .011 .013 .015 .021 .033 .070
.9
.032 .032 .033 .033 .033 .034 .036 .038 .043 .052 .07 .11 .24
.001 0.14 2.4 23
ncv
= 1 .2C
0.092
Environment ~=.00055[(~)5 + 1].XP(2.5 (~) ; I Environment
Factor - X_
GB
T. s= Ambient Temperature (C) Ratio of Operating to Rated Vottage GF GM Ns Nu
4.0 8.0 5.0 14 4.0 6.0 13.0 20 20 .50 11 29 530
Alc
Quality Factor - ZQ IF
Quality
7tQ
.020 .10 .30 1.0 10
Uc UF fhv
s
R
P M Lower
sF MF ML
CL
.. .
MIL-HDBK-217F
10.7
CAPACITORS,
FIXED,
MICA STYLE CM DESCRIPTION MICA (Dipped or Molded)
SPECIFICATION MIL-C-5
MIL-C-39001
CMR Ap = LbZCvZQzE BaseFailure Rate - ~
MICA (Dipped), Established Reliability Failures/l OG Hours

Base Failure Rate - ~ (T=850C Max Rated) (MIL-C-5, Temp. Ran@ N) stress .1 .3 .5 .00024 .00038 .00059 .Ooow .0015 .0023 .0036 .0056 .0087 [(~)3+ .00051 .00079 .0012 .0010 .003 .0047 .0074 .012 .018 1]W(16
TA ~)
(T=70C Max Rated) (MIL-G5, Temp. Range M) stress .1 .3 .5 .00030 .00047 .00075 .0012 .0019 .0031 .0049 .0078 8.6x10-10 .00041 .00066 .0011 .0017 .0027 .0043 .0068 .011 [(3)3 .00086 .0014 .0022 .0035 .0056 .0089 .014 .023 + I]exP(16
I .7 .0019 .0030 .0047 .0075 .012 .019 .030 .049 (~) .9 .0036 .0058 .0092 .015 .023 .037 .059 .095 ) lb= TA (C) 0 10 20 30 40 50 60 70 80
.7 .0011 .0017 .0027 .0042 .0065 .010 .016 .025 .039 (w)
.9 .0021 .0033 .0052 .0081 .013 .020 .031 .048 .076 )
T
10 20 30 40 50 60 70 ~=
.00017 .00027 .00042 .00066 .0010 .0016 .0025 .0040 I .0062
8.6 XW1O T= s.
T.
s.
Ambient Temperature (oC) Ratio of Operating to Rated Vottage
Operating vottage is the sum of applied D.C. voltage
Base Failure Rate - ~ (T=125CMax Rated)

n=1500C Temp. Ranqe 0) .7 .9 .00062 .00093 .0014 .0021 .0031 .0046 .0069 .010 .016 .023 .035 .052 .077 Max Rated) Temp. Ranqe P) .7 .00017 .00024 .00036 .00052 .00076 .0011 .0016 .0024 .0034 .0050 .0073 .011 .016 .023 .033 .049 (7;;?) .9 .00033 .00047 .00069 .0010 .0015 .0022 .0031 .0046 .0067 .0098 .014 .021 .030 .044 .065 .095 ) stress .5 R-ange P; MIL-C-39001, UY!!kQs Temp. TA (C) o 10 20 30 40 % 70 80 90 100 110 120 130 140 150 .1 .00003 .00004 .00006 .00008 .00012 .00018 .00026 .00038 .00055 .0008 .0012 .0017 .0025 .0036 .0053 .0078 .3 .00004 .00005 .00008 .00012 .00017 .00025 .00036 .00053 .00077 .0011 .0016 .0024 .0035 .0051 .0074 .011
f!fwi
TA (C) o 10 20 30 40 50 60 70 80 90 100 110 120 ~b= T= s=
Temp. Range O; MIL-C-39001 Stress .1 .3 .5 .00005 .00008 .00011 .00017 .00025 .00038 .00057 .00085 .0013 .0019 .0028 ,0042 .0063 .00007 .00011 .00016 .00024 .00036 .00053 .0008 .0012 .0018 .0027 .0040 .0059 .0089 .00015 .00022 .00033 .00050 .00074 .0011 .0017 .0025 .0037 .0055 .0083 .012 .018 jeW(16
.00032 .00048 .00071 .0011 .0016 .0024 .0036 .0053 .008 .012 .018 ,027 .040 (%%))
8.6)( 10-10 [(3)3+
.00008 .00011 .00017 .00024 .00035 .00051 .00075 .0011 .0016 .0023 .0034 .0050 .0073 .011 .015 .023 1].XP(16
Ambient Temperature (C) Ratio of Operating to Rated Vottage
Ab= S.6XIO-10[(33+
Operating voltage is the sum of applied D.C. voltage and pa ak A.C. voltage.
Ambient Temperature (C) T= Ratio of Operating to Rated Voftaqe sOperating voltage is the s~m of applied D.C. voltage and peak A.C. voltage.
10-12
* ,.
MIL-HDBK-217F
10.7 Capacitance Factor - ~V
CAPACITORS,
FIXED,
MICA
Capacitance, C (pF)
2 38 300 2000 8600 29000 84000
Environment Factor - z=
Cv .50 .75 1.0 1.3 106 %c 1,9
IF
Environment
GB
1.0 2.0 10 6.0 16 5.0 7.0 22 28 23 .50 13 34 610
GF %
Ns Nu
2.2
Uc
UF
Cv
= 0.45C4
%nN
SF MF
Quality Factor - nQ Quality

T
ML
c1 .010 .030 .10 .30

1.0 1.5
s
R P M L MIL-C-5, Non-Est. Rel. Dipped
3.0 6.0 15
MIL-C-5, Non-Est. Ref. Molded Lower
10-13
r-
--
...:--
r---
----
nu.
MIL-HDBK-217F
10.8
CAPACITORS,
FIXED,
MICA, STYLE CB
BUTTON
SPECIFICATION MIL-C-1095O
DESCRIPTION MICA, Button Style
Xp = LbZCvXQnE
(T= 85C Max Rated)
Failures/l
OG Hours
Base Failure Rate - ~ (T= 150C Max Rated) fAll TvoP=-----Fxrxmt ----CR50\ \ . ....-
(Stvle CB50)
s&-
TA (Z) 0 10 20 30 40 50 60 70
.1 .0067 .0071 .0076 .0082 .009 .010 .012 .013
.3
.0094 .0099 .011 .011 .013 .014 .016 .019
.5
.019 .021 .022 .024 .026 .029 .033 .039
.7
,042 .044 .047 .051 .056 .063 .072 .084
.9
.082 .086 .092 .10 .11 .12 .14 .16
TA (C)
.1 .0058 .0059 .0061 .0062 .0064 .0067 .0070 .0074 .0079 .0085 .0093 .010 .011 .013 .015 .018
.3
.0081 .0083 .0085 .0087 .009 .0094 .0098 .010 .011 .012 .013 .014 .016 .018 .021 .025
stress .5
.017 .017 .018 .018 .019 .019 .020 .022 .023 .025 .027 .03 .033 .038 .044 .052
.7
.036 .037 .038 .039 .040 .042 .044 .046 .049 .053 .058 .064 .072 .082 ,095 .11
.9
.071 .072 .074 .076 .079 .082 .086 .090 .096 .10 .11 .12 .14 .16 .18 .22 i
0
10 20 30 40 50 60 70 80 90
::00
5~~~~)~~l]ex~72
(~-
100 110
T.
120 130 140 150 k
s=
~=
.0053 [(~)3
+ l]exP(l.2
(T~~~)63)
T= s==
Operating voltage is the sum of applied D.C. voltage and peak A.C. voltage. c
10-14
MIL-HDBK-217F
10.8
CAPACITORS,
FIXED,
MICA,
BUTTON
Quality Factor - ZQ
Environment Factor - X.
t
Quality
MIL-C-1095O Lower
ftQ
5.0 15
Environment GB GF GM Ns
1.0 2.0 10 5.0 16 5.0 7.0 22 28 23 .50 13 34 610
Capacitance Factor - ~v Capacitance, C (pF)

8
Nu AC IF
*UC
Cv
.50 .76 1.0 1.3 1.6 1.9 2.2
50 160 500 1200 2600 5000
UF RW SF MF ML cL
Cv
= .31c023
10-15
. =n--==-=-c=.==s-ee..-
_m_-
. .
..
_._. ~== _. ._.
MIL-HDBK-217F
, I
I I
I
10.9
CAPACITORS,
FIXED,
GLASS
STYLE CY CYR DESCRIPTION GIass Glass, Established Reliability
SPECIFICATION MlL-C-l 1272 MIL-C-23269
Ap = kbnCVTCQnE Failures/l Base Faiture Rate - ~ (T=125C Max Rated)
OG Hours
Base Failure Rate - &
(T= 200C Max Rated) (MIL-C-1 1272 Ternp Range D) & .1 .3 .5 .? .00001 .00001 .00002
WL!!!!! C-23296
TA (%; o
10 20 30 40 50 60 70 80 90 100 110 120
and MlL-C-l 1272 Temp. Range Cl

Stmss
.1
.00005 .00007 .00011 .00016 .00024 .00036 .00054 .0008 .0012 .0018 .0027 .0040 .0060
.3
.00005 .00008 .00012 .00018 .00027 .00041 .00061 .00091 .0014 .0020 .0030 .0045 .0068
.5
.00010 .00014 .00022 .00032 .00048 .00072 .0011 .0016 .0024 .0036 .0054 .0080 .012
.7
.00023 .00035 .00052 .00078 .0012 .0017 .0026 .0039 ,0058 .0087 .013 .019 .029
.9
.0005! .0008 .0012 .0018 .0028 .0041 .0062 .0092 .014 .021 .031 .046 .069
TA (C o 10
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180
.9
.00010 .00014 .00019 .00027 .00038 .00053 .00074 .0010 .0015 .0020 .0029 .0040 .0056 .0079 .011 .016 .022 .031 .043 .060 ,084
.Oooo1 .00002
.00001 .00002 .00003 .00004 .00005 .00007 .00010 .00014 .00020 .00028 .00039 .00055 .00078 .0011 .0015 .0021 .0030 .0042 .0059 .0083 .00002 .00003 .00005 .00007 .00009 .00013 .00018 .00025 .00035 .00050 .00070 .00098 .0014 .0019 .0027 .0038 .0053 .0075 .010 .015
.00004 .00006 .00008 .00011 .00016 ,00022 .00031 .00044 .00061 .00086 .0012 .0017 .0024 .0033 .0047 .0065 .0092 .013 .018 .025 ,035
.00002 .00003 .00005 .00006 .00009 .00013 .00018 .00025 .00035 .00049 .00069 .00096 .0014 .0019 .0027 .0037 .0052 .0073
b = 8.25X lo-fo [(:)4
+ 1].xlp
(T;%)
190 200
T= s=
Ambient Temperature (C) Ratio of Operating to Rated Vottage $= 8.25x I0 -q(:)4+ 1]W(16 (%%) )
Operating voltage is the sum of applied D.C. vottage and peak A.C. voltage.
T= s.
Operating voltage is the sum of applied D.C, voltage and peak A.C. voltage.
Ml13HDBK-217F
10.9
CAPACITORS,
FIXED,
GLASS
Capacitance Factor - ~,v -. Capacitance, C (pF) 1 4 30 200 900 3000 8500 Cv .62 .75 1.0 1.3 1.6 1.9 2.2
Environment Factor - ZE
Environment GB GF GM Ns Nu AC IF *UC *UF RW
~E 1.0 2.0 10 6.0 16 5.0 7.0 22 28 23 .50 13 34 610
Cv = 0.62C014
SF MF
Quality Factor Quality
ML
~Q
~Q
.030 .10 .30 1.0 3.0 3.0
10
CL
s
R P M L MlL-C-l 1272, Non-Est. Rel.
Lower
10-17
MJL-HDBK-21
7F
10.10
CAPACITORS,
FIXED,
CERAMIC,
GENERAL
PURPOSE
3ECIFICATION
M !L-C-11015 M L-C-39014
STYLE GK CKR
DESCRIPTION Ceramk, General Puqxxe Ceramk, General Purpose, Est. Rel.
Lp = kbZcvZQnE
Base Failure Rate - ~ (T= 850C Max Rated) AIL-C31014 Styles CKR13, 48, 64, 72; IL-C-I 1015 Type A Rated Temperature)
I
Failures/l
OG Hours
Base Failure Rate - ~ (T =1500C Max Rated) ItL-C-l 1015 T ype C Rated Temperature)
TA (W
.1 o 10 20 30 40 50 60 70 80 .00067 .00069 .00071 .00073 .00075 .00077 .00079 .00081 .00083 .3 .0013 .0013 .0014 .0014 .0014 .0015 ,0015 .0016 .0016 .5 .0036 .0037 .0030 .0039 .004 .0042 .0043 .0044 .0045 .7 .0088 .0091 .0093 .0096 .0099 .010 ,010 .011 .011 .9 .018 .019 .019 .020 .020 .021 .021 .022 .023 o 10 20 30 40 50 60 70 80 90 Base Failure Rate - ~ (T= 125C Max Rated) (MIL-C-39014 Styles CKR05-12, 14-19, 73, 74; IL-C- I 1015 Type B Rated Temperature) stress .1 .3 .5 .7 .9 (=) o 100 110 120 130 140 150
.1 .00059 .00061 .00062 .00064 .00065 .00067 .00068 .00070 .00072 .00073 .00075 .00077 .00079 .00081 .00083 .00085
.3
.5
.0032 .0033 .0034 .0035 .0035 .0036 .0037 .0038 .0039 .0040 .0041 .0042 .0043 .0044 .0045 .0046
.7
.0078 .008 .0082 .0084 .0086 .0088 .009 .0092 .0095 .0097 .0099 .010 .010 .011 .011 .011
.9
.016 .016 .017 .017 .018 .018 .018 .015 .019 .020 .020 .021 .021 .022 .022 .023
.0011
.0012 .0012 .0012 .0013 .0013 .0013 .0013 .0014 .0014 .0014 .0015 .0015 .0016 .0016 .0016
L
. %T= s=
0003[(33 ) 18X(T=
Operating vottage is the sum of applied D.C. voltage and peak A,C. voltage.
10
:: 40 50 60 70 80 90 100 110 120
.00062 .00063 .00065 .00067 .00068 .00070 .00072 .00074 .00076 .00077 .00079 .00081 .00084
.0012 .0012 .0013 .0013 .0013 .0014 .0014 .0014 .0015 .0015 .0015 .0016 .0016
.0033 .0034 .0035 .0036 .0037 .0038 .0039 .0040 .0041 .0042 .0043 .0044 .0045
.0082 .0084 .0086 .0088 .0090 .0093 .0095 .0097 .010 .010 .010 .011 .011
.017 .017 .018 .018 .018 .019 .019 .020 .020 .021 .021 .022 .023
\
Ts.
0003[(33+11xp
. b =
T= s.
ooo[(~)+11p(=)
NOTE: The rated temperature designation (type A, B, or C) is shown in the pan number, e.g., CKG1AW22M).
MIL-HDBK-217F
10.10
CAPACITORS,
FIXED,
CERAMIC,
GENERAL
PURPOSE
Capacitance Factor - WV Capacitance, C (pF) 6.0 240 3300 36,000 240,000 1,100,000 4,300,000
L
~cv
.50 .75
Environment
GB GF GM 1.0 2.0 9.0 5.0 15 4.0 4.0 8.0 12 20 .40 13 34 610
1.0 1.3 1.6 1.9 2.2
Ns Nu Ac IF
Uc
*UF
Xcv = .41C
0.11
*RW
SF MF
Quality Factor - n=
ML
Quality
c1
.030 .10 .30 1.0 3.0 3.0 10
s
R P M L
MlL-C-l 1015, Non-Est. Rel.

Lower
10-19
MIL-I-IDBK-217F
10.11
CAPACITORS,
FIXED,
CERAMIC,
TEMPERATURE
COMPENSATING
AND
CHIP
SPECIFICATION MIL-C-20 MIL-C-55681
STYLE CCR and CC CDR
DESCRIPTION Ceramic, Temperature Compensating, and Non Est. Rel. Ceramic, Chip, Est. Rel.
Est.
I
lp = kbZcVXOzE
Failures/l
OG Hours
Capacitance Factor - ~,v
(r-85%
(MIL-C ~~ W) 10 20 30 40 E 70 80 )
Max Ratecf)
45, 85, 95-97) .7 .0019 ,0029 .0043 .0064 .0096 .014 .021 .032 .047 .9 .0040 .0059 .0088 .013 .020 .029 .044 .065 .097 L Stress .5 .00080 .0012 .0018 .0026 .0039 .0059 .0088 .013 .019
Stybs CC 20,25,30,32,35,
.1 .3 .00028 .00042 .00063 .000!34 .0014 .0021 .0031 .0046 .0069
Capacitance, C (pF)
1
Cv .59
.00015 .00022 .00033 .00049 .00073 .0011 .0016 .0024 .0036
I
,
7 81 720 4,100 17,000 58;000 0.12 Zcv = .59C
.75 1.0 1.3 1.6 1.9

2.2
I
\
Quality Factor - XQ )1 Quality
= 2.6x1O -9[(:)3+ T. s-
1].XP(14.3
(T;3
~Q
.030 .10 .30 1.0 3.0
10 Environment Factor - XE I ~E
s
R P M
Non-Est. Lower Rel.
Ambmnt Temperature (%) Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied D.C. vottage and maak A.C. vottaoe. Base Failure Rate - ~ (T= 125oC Max Rated) (MIL-C-20 Styles CC 5-9,13-19,21,22,26,27, 31,33, 36, 37, 47, 50-57, 75-79, 81-83, CCR 05-09,13-19, 5457, 75-79, 81-83, 90; MIL-C-55681 All CDR Styles) Stress TA (C) .1 .3 .5 .7 .9 0 E 30 40 50 60 70 80 90 100 110 120 .00005 .00007 .00010 .00014 .00021 .00030 .00042 .00061 .00087 .0012 .0018 .0026 1 .0037 2.6x10 T= s. g[(~)+ .00009 .00014 .00019 .00028 .00040 .00057 .00082 .0012 .0017 .0024 .0034 .0049 .0071 .00027 .00038 .00055 .00078 .0011 .0016 .0023 .0033 .0047 .0068 .0097 .014 .020 l]exp(143 .00065 .00093 .0013 .0019 .0027 .0039 .0056 .008 ,011 .016 .024 .034 ,048 (TJ~T .0013 .0019 .0027 .0039 .0056 .008 .011 .016 .023 .034 .048 .069 .099 ) )
Environment
GB GF % N~ Nu %c IF *UC
*UF *RW
1.0 2.0 10 5.0 17 4.0 8.0 16

35 24
~=
SF
.50 13 34
MF
ML
Operating vottage is the sum of applied D.C. voftage and peak A.C. voltage.
610
I0-20
MIL-HDBK-217F
10.12 SPECIFICATION MIL-C-39003 STYLE CSR
CAPACITORS,
FIXED,
ELECTROLYTIC,
TANTALUM,
SOLID
DESCRIPTION Tantatum Electrolytic (Solid), Est. Ret.
P = %mCV%R
Base Failure Rate - ~ Stress ~ (c)
o
n Failures/l Q E
OG Hours
Series Resistance Factor - Zsl Circuit Resistance, CR (ohms/vott)

.7 .026 .027 .028 .030 .032 .035 .040 .047 .050 .074 .10 .15 .24 (T~& ) .9 .051 .052 .055 .058 .063 .069 .078 .092 .11 .14
.1
.0042 .0043 .0045 .0048 .0051 .0057 .0064 .0075 .0092 .012 .016 .024 .039
.3 .0058 .0060 .0063 .0067 .0072 .0079 .009 .011 .013 .017 .023 .034 .054 .
.5 .012 .012 .013 .014 .015 .016 .019 .022 .027 .034 .047 .07 .11 1]..p(2.6
% R .066 .10 .13 .20 .27 .33
10 20 30 40 50 60 70 80
90 100 110 120
>0.8 >0.6 to 0.8 >0.4 to 0.6

>0.2 to 0.4 >0.1 to 0.2
0 to 0.1
Lb = .00375 [(~)3 T. s=
CR
= Eff. Res. Between Cap. and Pwr. Supply Voltage Appiied to Capacitor
operating votiage is the sum of applied D.C. vohage and peak A.C. voltage.
Envimment
Environment
Factor - YC=
L
Capacitance Factor - WV Capacitance, C @F) .003 .091 1.0 8.9 50 210 710 0.12 Cv 0.5 .75 1.0 1.3 1.6 1.9
GB GF %
NS Nu
1.0 2.0 8.0 5.0 14 4.0 5.0 12 20 24

.40 11 29 530
AC
n~v = 1 .Oc
IF
*UC
Quality Faotor-x.
q
*UF
Quality
c s
+%-I
0.010 0.030 0.030 0.10 0.30 1.0 1.5 10
RW SF MF ML CL
B R P M L Lower
MIL-HDBK-217F
10.13
CAPACITORS,
FIXED,
ELECTROLYTIC,
TANTALUM,
NON-SOLID
STYLE CL CLR
DESCf IPTION Tantalw 1, Electrolyk (Non-Solid) Tantalw I, Electrolytic (Non-Solid),
Est. Rel.
kp = kbXcVZCXQxE
Base Failure Rate - ~ (-r = 85C Max Rated) (MIL-C-3965 Styles CL24-27, 34-37) TA (C) 0 10 20 30 40 50 60 ~~ool ~ .1 .0021 .0023 .0026 .0030 .0036 .0047 .0065 .3 .0029 .0032 .0036 .0042 .0051 .0066 .0091 stress .5 .0061 .0067 .0075 .0087 .011 .014 .019 .7 .013 .014 .016 .019 .023 .029 .041 .9 .026 .028 .031 .036 .044 .057 .079
Failures/l
06 Hours
(T= 175eC Max Rated) tllL-C-3965 Sty Ies CL1O, 13, 14, 16-18)
TA (% o
10 20 30 40 50
.1
.0017 .0017 .0018 .0018 .0019 .0019 .002 .0021 .0023 .0025 .0028 .0032 .0037 .0046 .0059 .0079 .011 .018
.3
.0024 .0024 .0025 .0025 .0026 .0027 .0028 .0030 .0032 .0035 .0039 .0044 .0052 .0064 .0082 .011 .016 .025
.5
.0050 .0051 ,0052 .0053 .0054 .0056 .0058 .0062 .0066 .0072 .0080 .0092 .011 .013 .017 .023 .033 .051
.7
.011 .011 .011 .011 .012 .012 ,013 .013 .014 .016 .017 .020 .023 .029 .037 .049 .071
.9
.021 .021 .022 .022 .023 .023 .024 .02L .028 .030 .034 .039
T s.
60 70 80 90 100 110 120 130 140 150 160 170
Base Failure Rate - ~ (T= 125C Max Rated) (MIL-C-3965 Styles CL20-23, 30-33, 40-43, 46-56, 64i7, 70-73; and all MI L-C-39006 Styles) Stress .7 .9 ,1 .3 TA (C) .5
o 10
20 30 40 50 60 70 80 90 100 110 120
.0018 .0019 .0020 .0021 .0023 .0025 .0028 .0033 .0041 ,0052 .0071 .011 ,017
.0026 .0026 .0028 .0029 .0032 .0035 .0040 .0046 .0057 .0073 .010 .015 .024
.0053 .0055 .0057 .0061 .0066 .0072 .0082 .0096 .012 .015 .021 .031 .050
.011 .012 .012 .013 .014 .016 .018 .021 .025 .033 .045 .066 .11 (Tj~~ )
.022 .023 .024 .026 .028 .030 .034 .040 .049 .084
kb=.00165[(~)3+ 0 ) T.
l]exp(2.6(~
)-0)
Ab=.00165[(~)3+ T= s.
l]exp(2.6
s=
Operating voltage is the sum of apphed D.C. voftagc and peak A.C. voltage.
10-22
MIL-HDBK-217F
10.13
CAPACITORS,
FIXED,
ELECTROLYTIC,
TANTALUM,
NON-SOLID
Capadtanoe
Factor - ~v I ~cv
.70 1.0 1.3
Quality
Quality Factor - nfi
I I
Capadance, C (p.F)
.091 20 1100
I
Factor - ~ I
s
R
.030 .10 .30 1.0 1.5 Non-Est. Rel. 3.0 10
P M L
WV = .82C0066
Constmction Construction Type
MIL-C-3965,
7CC
Lower
Slug, All Tantalum Foil, Hermetic Slug, Hermetic Foil, Non-Hermetic Slug, Non-Herrnetk
q
q q
.30 1.0 2.0 2.5 3.0
Factor - z=
L
fiE
q Type
of Seal Identified as Follows:
GB GF GM Ns
Nu Ac
1.0 2.0 10 6.0 16 4,0 8.0 14 30 23 .50 13 34 610
1) MIL-C-3965 (CL) - Note Last Letter in Part Number: G - Hermetio E - Non-Hermetic Example: CL1 OBC700TPQ is Hermetic 2) MIL-C39006 (CLR) - Consult Individual Part Specification Sheet (slash sheet) NOTE: Foil Types -
CL 20-25,30-33,40,41,51 CLR 25,27,35,37,53,71,73
-54, 70-73
IF Uc UF RVV SF MF ML cL
Slug Types - CL 10, 13, 14, 16, 17, 18,55,56, 64-66, 67 CLR 10, 14, 17,65, 69,89 All Tantalum - CL 26,27,34-37,42,43, CLR 79 46-49
10-23
MIL-HDBK-217F
10.14
CAPACITORS,
FIXED,
ELECTROLYTIC,
ALUMINUM
STYLE CUR and CU
DESCRIPTION Ektrolytic, Aluminum Oxide, Est. Rel. and Non-Est. Rel.
Lp = kbZCvmQzE
Base Failure Rate - ~ (T= 85C Max Rated) [M IL-C-39018 stvle 71 ~
Failures/l
06 Hours
Base Faiture Rate - ~
Stfws
T* (%)
0 ;: 30 40 50 60 70
.1
.0095 .012 .017 .023 .034 .054 .089 .16
.3
.011 .015 .020 .028 .042 .065 .11 .19
.5
.019 .024 .033 .046 .068 .11 .18 .31
.7
.035 .046 .062 .087 .13 .20 .33 .58
.9
.064 .084 .11 .16 .23 .36 .60 1.1 . )
(T= 125C Max Rated) (All h L-C-3901 8 Styles Except 71, 16 and 17) stress TA (~) .1 .5 .7 .9 .3 o 10
20 30 40 .0055 .0065 .0077 .0094 .012 .015 .021 .029 .042 .064 .10 .17 .30 .0067 .0078 .0093 .011 .014 .019 .025 .035 .050 .077 .12 .21 .37 .011 .013 .015 .019 .023 .030 .041 .057 .083 .13 .20 .34 .60 .021 .024 .029 .035 .044 .057 .077 .11 .16 .24 .38 .63 1.1 .038 .044 .052 .064 ,080 .10 .14 .20 .28 .43
;=.O
o:[(~;~+
l]:;~.og;-;
50 60
T=
Ambient Temperature (C) 70 Ratio of Operating to Rated Voftage 80 90 100 110 120 .9 .047 .057 .072 .094 ,13 .18 .26 .40 .64
s-
Operating voltage is the sum of applied D.C. voltage and peak A.C. voftage.
Base Faiture Rate - ~ (T= 105C Max Rated) (MIL-C-39018 Styles 16 and 17) Sttess .7 ,1 .3 .5 .0070 .0085 .011 .014 .019 .026 .038 .059 .095 ,0064 .010 .013 .017 .022 .031 .046 .071 .11 .014 .017 .021 .027 .037 .052 .076 .12 .19 .026 .031 .040 .051 .069 .097 .14 .22 .35
[A(~) 0 10 20 30 40 50 60 :: 100 :=,0
,,=.00254[(:)3
+ I]exp(s.09
(~)
5 )
T.
s=
O:[($;:+
1]:~.og::;;7;~
), I
T s=
10-24
MIL-HDBK-217F
10.14
CAPACITORS,
FIXED,
ELECTROLYTIC,
ALUMINUM
Capacitate Capacitance, C (@) 2.5 55 400 1700 5500 14,000 32,000 65,000 120,000
Factor - WV
Environment
Cv
.40 .70 1.0 1.3
Factor - YC_ k
Environment GB GF L GM Ns r NU AK AIF
1.0
2.0 12 6.0 17 10
1.6 1.9 2.2 2.5 2.8
12 28 35 27
.50 14 38 690
*UC UF RW SF MF
Cv
= .34c08
ML CL
Quality Factor - YCQ Quality
%Q
.030 .10 .30 1.0 3.0 10
s
R P M Non-Est. Ret. Lower
MIL-HDBK-217F
10.15
CAPACITORS,
FIXED,
ELECTROLYTIC
(DRY),
ALUMINUM
STYLE CE
DESCRIPTION Aluminum, Dry Electrolyte, Polarized ~ailures/106
Ap = XbXcvZQzE
(T -- - ----- . .-. -.-, \ = Roc. Mar Ratt?ch
Hours
Quality Factor - Xfi Quality

.7 .9
stress
TA (C) 0
:: 30 40 50 60
.1 .0064
.0078 .0099 .013 .018 .026 .041
.3
.5
7rQ
.0074 .009 .011 .015 .021 .030 .047
.011 .014 .017 .023 .031 .046 .071
.020 .024 .030 ,040 .055 .08 .12
.034 .042 .053 .070 .096 .14 .22
MIL-SPEC Lower
3.0 10
Factor - n=
L
:~o
T.
s-
;5)3
:1:0 (i) ;;
GB GF GM N~ Nu
n~
1.0 2.0
12 6.0
17 10
12 28 35 27
*IC
IF
Capacitance Capacitance, 3.2 62 C (vF) Factor - Xcv ~cv .40
*UC *UF *RW .70 1.0 1.3 1.6 1.9 2.2 2.5 2.8 SF
~F
.50 14 38 690
400 1600 4800 12,000 26,000 50,000 91,000
ML c1
~cv
= .32C
0.19 I
MIL-HDBK-217F
10.16
CAPACITORS,
VARIABLE,
CERAMIC
STYLE Cv
DESCRIPTION Variable, Ceramic kp = kbfiQZE Failures/l 06 Hours
Base Failure Rate - ~ (MIL-CTA (Z) o 10 20 30 40 50 60 70

1 80 (T= 85C Max Rated) 1 Styles CV 11, 14, 21,31, 32,34,40, .1 .0030 .0031 .0033 .0036 .0041 .0047 .0058 .0076 .011 .3 .016 .017 .018 .020 .022 .026 .031 .041 .058 .5 .086 .069 .073 .080 .089 .10 .13 .17 .24 .7 .18 .10 .20 .21 .24 .20 .34 .4s .63
Quality Factor - nQ
41) .9 .37 .39 .41 .45 .50 .59 .72 .94 1,3
x~
4 20
Environment 1
Factor - n=
L
Environment
xc L
GB Ab=.00224[(~)3
T s. =
1.0 3.0 13 8.0 24 6.0 10 37 70 36 .40
+ 1].xp(l.,,
(~)101)
GF GM Ns Nu
AC
Base Failure Rate - ~ (T= 125C Max Rated) (M IL-C-81 Styles CV 35, 36) stress .1 .3 .5 .7
.0028 .0028
.0029
iF Uc .9
.35 .35
.36
TA (C) o ;:
30 40 50 % 80 90 100 110 120
*UF
RW SF MF ML CL
.015 .015
.016
.061 .062
.064
.16 .17
.17
.0030 .0031 .0033 .0035 .0038 .0043 ,0050 .0062 .0079 .011
.016 .017 .018 .019 .021 .023 .027 .033 .043 .059
.066 .068 .072 .077 .084 .095 .11 .14 .17 .24
,18 .18 ,19 .21 .23 .25 .30 .36 .47 .64
.37 .39 .41 .44 .48 .54 .63 .76 .98 1.4
52
~-.00224[(~)3+
T= s=
l]exp(l.59(~)101)
10-27
MIL-HDBK-217F
10.17
CAPACITORS,
VARIABLE, STYLE Pc
PISTON
TYPE DESCRIPTION Variable, Piston Type, Tubular Trimmer
Lp = XbXQnE Failures/l
Base Failure Rate - ~ (T. 125C Max Rated) (MIL-C-14409 Styles G, Ii, J, L, T) Stress .1 .3 .5 .7 .0030 .0041 .0055 .0075 .010 .014 .019 .025 .034 .047 .063 .086 .12 X1 O-7 [(~)3+ .0051 .0070 .0094 .013 .017 .024 .032 .043 .059 .079 .11 .15 .20 .013 .010 .024 .033 .044 .060 .082 .11 .15 .20 .27 .37 .51 l]exP(1201 .031 .042 .057 .077 .10 .14 .19 .26 .35 .48 .65 .88 1.2 (%%)
h
OG Hours
Quality Factor - nQ
Quality
4
ZQ 4
TA (C) 1:
.9 .063 .085 .11 .16 .21 .29 .39 .53 .71 .96 1.3 1.8 2.4 ) ,
MIL-SPEC Lower
20 30 40 50 60 70 80 90 100 110 120 $=7.3

T=
Iv
Environment
GB GF GM Ns
Nu
3.0
-+-l
18 3.0 4.0 20 30 32

D.C. vohage
~er~ting
vohage is the sum of applied and pe ak A.C. voltage. Base Failure Rate - ~ 150C Max Rated) (MIL-C-1 4409 Characteristic (T= Stress .1
Alc
IF
%c
0)
UF
.9 .038 .051 .068 ,09 .12 .16 .21 .28 .38 .50 .67 .89 1.2 4:: 2.8
o
10 20 30 40 50 % 80 90 100 110 120 130 140 150
.0019 .0025 .0033 .0044 .005s .0077 .010 .014 .018 .024 .032 .043 .057 .076 .10 .13
,3 .0032 .0042 .0056 .0074 .0099 .013 .018 .023 .031 .041 .055 .073 .097 .13 .17 .23
.5 .0081 .011 .014 .019 .025 .034 .045 .060 .079 ,11 .14 .19 ,25 .33 .44 ,59
.7 .019 .025 .034 .045 .060 .079 .11 .14 .19 .25 .33 .44 .59 .78 1.0 1.4
RW SF MF ML c,
.50 18 46 830
kb = 7.3 x 10-7
[(33+
T =
(C) Ambient Temperature s= Ratio of Operating to Rated Vottage Operating voltage is the sum of applied D.C. voltage and peak A,C. voltage.
11ex421 (-))
,
--
.-
. ..
----
-r
----
--
I
I
MIL-HDBK-217F
10.18
CAPACITORS, DESCRIPTION Variable, Air Trimmer
VARIABLE,
AIR
TRIMMER
STYLE CT kp = kb~QmE
Failures/l
06 Hours Environment Factor - z~
Base Failure Rate - ~ \ 1A (C)

0 10 20 30 40 50 60 70 80
-.3
- ...-.
. .-. --, .5
.032 .044 .059 .08 .11 .15 .20 .27
.36
stress
.7
.076 .10 .14 .19 .26 .35 .47 .63
.85
Environment
.9
.15 .21 .28 .38
nE 1.0 3.0 13 8.0 24 6.0 10 37 70 36 .50 20 52 950
.1
.0074 .010 .014 .018 .025 .034 .046 .062 .083
GB GF % NS NU *IC
.013 .017 .023 .031 .042 .057 .078 .10 .14
.52 .70 .94 1.3

1.7
IF Uc *UF RW SF MF
- 1.92 % T-
XIO-6[(-&)3+
1]
.wfos
(~)
ML CL
Ambient
Temperature
(C) Voltage D.C. vottag~
s=
Ratio of Operating
to Rated
Operating voltqe is the sum of applied and peak A.C. voltage.
Quality Factor - XQ
Quality
~Q
MIL-SPEC Lower
5 20
10-29
------
r--
MIL-HDBK-217F
10.19
CAPACITORS,
VARIABLE STYLE
AND
FIXED,
GAS
OR
VACUUM
SPECIFICATION M IL-C-23 183
DESCRIPTION
CG
Gas or Vaa.mm Dielectric, Fixed and Variable, Ceramic or

Glass Envebpe
Lp = kbXcFXQnE
Base Failure Rate - ~ (T. 85C Max Rated) (Styles CG 20,21,30,31,32,40-44,
51,60-64,
Failures/l
OG Hours
Base Failure Rate - ~ (T= 125C Max Rated) (stvl@ .50) -\ -.= .- CG -.-, Strm8 .1
.014 .014 .014 .015 .016 .016 .018 .019 .022 .025 .031 .04 .055
.3 .5 .7 .9
stress
.1
0
.3 .5 .7 .9
m
.88 ,92 .98 1.1 1.2 1.4 1.7 2.2 3.2 1.9 1.9 2.1 2.2 2.5 2.9 3.6 4.7 6.6 0 10 20 30 40 50
10
20 30 40 50 60 70 80 Ab=.o112
.015 .016 .017 .018 .020 .024 .029 .038 .054
.081 .084 .090 .098 .11 .13 .16 .20 .29
.33 .34 .37 .40 .45 .52 .64 .83 1.2
.075 .077 .078 .08 .084 .088 .095 .10 .12 .14 .17 .21 .29
.37 .31 .32 .33 .34 .36 .39 .42 .48 .55 .68 .87 1.2
.82 .83 .85 .88 .91 .96 1.0 1.1 1.3 1.5 1.8 2.3
1.7 1.8 1.8 1.9 1.9 2.0 2.2 2.4 2.7 3.1 3.8 4.9
[(~)3+ T=
11(15 (=)O1;
Vottage is the sum of applied
60 70
s=
Operating and peak
Ambient Temperature (C) Ratio of Operating to Rated voltage
80 90 100 110 120
D.C. voltage
A.C. voltage.
Base Faiture Rate - ~ (T= 100C Max Rated) (Styles CG 65, 66)
Stress
.1
o
.3
.5
.7
.9
30 40 50 60 70 80 90 100
1:
.014 .015 .015 .016 ,018 .020 .022 .027 .034 .045 .066
.078 .080 .084 .088 .095 .11 .12 .14 .18 .24 .36
.30 .33 .34 .36 .39 .43 .49 !59 .74 .99 1.5
.85 .87 .91 .96 1.0 1.2 1.3 1.6 2.0 2.7 3.9
1.8 1.8 1.9 ;;; 2.4 2.8 3.3 4.2 5.6 8.2 T= s= Ambient TemWrature (C) Ratio of Operating to Rated Vottage
Operating vottage is the sum of applied D.C. vottage and pa ak A,C. voltage.
~=.0112 T=
[(+)3+
l]exP(l.59
(~)lol)
s.
Ambient Temperature (C) Ratio of Operating to Rated
Voltage D.C. voltage
Operating vottage is the sum of applied and oeak A.C. voltaae.
10-30
I .!
I
,..
... .,,
... . .
.,.
MIL-HDBK-217F
10.19
CAPACITORS,
VARIABLE
AND
FIXED,
GAS
OR
VACUUM
Configuration Factor - TCCF

-Conf~ratkm Fixed Variable C F .10 1.0
Environment
Factor - fiE
Environment % GF GM Ns Nu
~E 1.0 3.0 14 8.0 27 10 18 70 108 40 .50 NIA NIA NIA
QuaIii Quality MIL-SPEC Lower
Factor- XQ
~Q
AC IF
3.0 20
*UC
*UF RW SF MF ML cL
MIL-HDBK-217F
10.20 Example Given:
CAPACITORS,
EXAMPLE
A 400 VDC
rated capacitor
type CQ09A1 KE153K3 iS Ming procured
is being used in a fixed ground with the applicable
environment, 59C component ambient temperature, and 200 VDC applied with 50 Vrms
@ W Hz. The Capadtor specification. in full accodance
The letters CQ- h the type designation hdkate that the specification is MIL-C-19978 and that it is a NonEstablished Reliability qualii level. The Ist K in the designation indicates characteristic K. The E in the designation corresponds to a 400 vott DC rating. The 153 in the designation expresses the
capacitance in pioofarads. The first two digits are signifiint and the third is the number of zeros to follow. Therefore, this capacitor has a capacdance of 15,000 picofarads. (NOTE: Picos 10-12, p = 10~
The appropriate model for CQ style capacitors is given in Section 10.3. Based on the given information the following model factors are determined from the tables shown in Section 10.3. Voltage stress ratio
must account for both the applied DC volts and the peak AC vottage, hence,
.68
S=
DC Volts Applied + ~2 (AC Volts Armlied~ = DC Rated Voltage
lb
.0082
Substitute S = .68 and TA = 55C into equatbn shown
with CharacteristicK ~ Table.

7ECV =
.94 10 2.0
Use
Table Equation (Note 15,000 pF = .015 pF)
7CQ ~E
= =
= ~
ICcv nQ XE = (.0082)(.94)(1
O)(2) = .15 FailuresJl 06 Hours
10-32
MIL-HDBK-217F
11.1
INDUCTIVE
DEVICES,
TRANSFORMERS
SPECIFICATION
MIL-T-27 MIL-T-21038 MIL-T-55831
STYLE TF TP
DESCRIPTION Audio, Power and High Power Pulse Low Power Pulse
IF, RF and Discriminator Xp = lb~QXE Failures/l 06 Hours
,
Maxinwm Rated OperatingTemperature (C) TH~ (%)

30
35
~~ 1
.0024 .0026 .0028 .0032 .0038 .0047 .0060 .0083 .012 .020 .036 .075
1052 .0023 .0023 .0024 .0025 .0027 .0029 .0032 .0035 .0040 .0047 .0057 .0071 .0093 .013 .019 .030
,~3 .0022 .0023 .0024 .0025 .0026 .0027 .0029 .0030 .0033 .0035 .0039 .0043 .0048 .0054 .0062 .0072 .0085 .010 .013 .016 .020
, =4 .0021 .0022 .0022 .0022 .0023 .0023 .0023 .0024 .0025 .0026 .0027 .0028 .0029 .0031 .0033 .0035 .0038 .0042 .0046 .0052 .0059 .0068 .0079 .0095 .011 .014
1705 .0018 .0018 .0019 .0019 .0020 .0020 .0021 .0021 .0022 .0023 .0024 .0024 .0025 .0026 .0027 .0028 .0030 .0031 .0032 .0034 .0036 .0038 .0040 .0042 .0044 .0047 .0050 .0053 .0056
>1706 .0016 .0016 .0016 .0016 .0017 .0017 .0017 .0017 .0017 .0017 .0017 .0017 .0018 .0018 .0018 .0018 .0019 .0019 .0019 .0020 .0020 .0021 .0021 .0022 .0023 .0024
.0025 .0026 .0027 .0029 .0030 .0032
40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 185 NOTE:
1
Themo
if THS IS not above the temperature rating for a given insulation class.
MIL-T-27 Insdatmn Class 0, MIL-T-21038 Insulation Class C?,and MlL-T-5563I tnsuhon lSs ) MIL-T-27 Insulation Class R, MIL-T-21 038 Insulation Class R, and MIL-T-55831
}1s are valtd onl

fiHS + 273\ ---= \
\..oolat?xp
Class O.
Insulation Class A.
3 4
~-om-(:))
~-mwx(TH:;:73)84 . Hot Spot Temperature (%), See Se&h 11.3.
+=m2exc:~273)i0
Rotor to Transformer
+-18*F=)87
MIL-T-27 Insulation Class S, MlL-T-2I 038 Insulation Class S, md MIL-T-S5631
Insulation Class B.
MIL-T-27 Insulation Class V, MIL-T-21 038 Insulation Class T, and MIL-T-s5631
Insulation Class C,*
MIL-T-27 Insulation Class T and MIL-T-21 038 Insulation Class U.*
MIL-T-27 Insulation Class U and MIL-T-21038
Insulanon Class V Nottor Oatormlnstlon of Irwulatlon Class I
Application
11-1
MIL-HDBK-217F
11.1
INDUCTIVE
DEVICES,
TRANSFORMERS
Quality Factor - ~
Family Type
Pulse Transformers Audio Transformers Power Transformers and Filters 1 MIL-SPEC
1.5 3.0 8.0

12
I Lower I 5.0 I 7.5 30

I
TRANSFORMER APPLICATION NOTE: Insulation Class and Family Type

Determination
MIL-T-27
TF I MIL-T-27 4 I Grad,
Example
R
Deslgnatlon
01
Fatity
m
~ symbol
576
RF Transformers
30
Imldabrl Clasa
Family Type Codes

q
Are: and Filter: 01 thru 09, 37 thru 41
Refer to Transformer Appllcatlon Determlnatlon of Family Typ.
Note
for
Power Transformer Audio Transformer:
10 thru 21, 50 thru 53
Environment Environment GB
Factor - ZE ~E
Pulse Transformer:
22 thru 36, 54
MI L-T-21038
1.0 TP
4
Example
Q
Designation
X11 OO8COO1
GF %
Ns Nu
6.0
12
MIL-T-21038
Grade
I
Insulation
5.0 16 6.0 8.0 7.0 9.0 24 .50 13 34 610

Grade 2
Class
MIL-T-55631.
The Transformers are Designated

Types, Grades and Classes.
Alc
IF
with the following Type I

Type II
. .
*UC
UF RW SF MF
Type Grade
Ill
Intermediate Frequency Transformer Radio Frequency Transformer Discriminator Transformer For Use When immersion and Moisture Resistance Tests are Required For Use When Moisture Resistance Test is Required For Use in Sealed Assemblies 85oC Maximum Operating Temperature 105C Maximum Operaiing Temperature 12SeC Maximum Operating Temperature > 125C Maximum Operating Temperature
Grade 3 Class O Class A Class B Class C
. -
The class denotes the maximum operating temperature (temperature rise plus maximum ambient temperature).
11-2
MIL-HDBK-217F
11.2 SPECIFICATION MIL-C-15305 MIL-C-3901O STYLE
INDUCTIVE
DEVICES,
COILS
DESCRIPTION Fixed and Variable, RF Moided, RF, Est. Rel.
Failures/l 06 Hours Xp = kbnc7cQ7LE

Base Failure Rate - ~ Maximum Operating Temperature ~C) TH~ (oC) 30 35 40 45 50 E 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150 851 .00044 1052 .00043
Construction Factor - Xc Construction Fixed Variable Zc

1504 .00037 .00037 .00037 .00038 .00038 .00039 .0004 .00041 .00042 .00043 .00044 .00046 .00047 .0005 .00052 .00055 .00059 .00063 .00068 .00075 .00083 .00093 .0011 .0012 0014
1253
.00039
.00048
.00053 .0006 .00071 .00087 .0011 .0015 .0023 .0037 .0067 .014
.00044
.00046 .00048 .00051 .00055 .0006 .00067 .00076 .00089 .0011 .0013 .0018 .0024 .0036 .0057
.0004
.00042 .00043 .00045 .00048 .00051 .00054 .00058 .00063 .00069 .00076 .00085 .00096 .0011 .0013 .0015 .0018 .0022 .0028
I
Quality Factor - ~
1 2
Quality s R P M MIL-C-15305 Lower
7rQ .03 .10 .30 1.0 4.0 20
NOTE: The models are valid onty if THS is not above the tern perature rating for a given insulation class.
~=mmex(:~:) ,n$u~onc,-$o
MlL-C- 15305 2
=mgexp(:;:) 3.
MlL-C-l 5305 InsulationClass A and MIL.C-3901 o ,~u~~c,wA,
~--19exp(TH::27a)e7
MIL-C-3901O Insulation ChseeB.
4.
MIL-C-15305 InsulationClass B and
MIL-C-I 5305 Insulation Class C and MIL-C-3901O

Insulation Class F .
HS
= Hot Spot Temperature(C), See Section f 1.3.
Refer to Coil Appllcetlon Note for Determhmtlon of Inaulatlon Claes.
11-3
MIL-HDBK-217F
11.2
INDUCTIVE
DEVICES,
COILS
Environment Factor - ZE Environment GB GF % Ns Nu Ac

IF
COIL
APPLICATION
Determination ~E 1.0 4.0 12 I 5.0 16 5.0 7.0 6.0 8.0

24 MIL--G153O5
NOTE: Infsulatlon Class From Part Designation
MlL-C-l 5305. All parts in this specification are R.F. wils. An example type designation is:
LT
4 I Insulation Class Code
001
Famify
*UC *UF
RW
The codes used for the Insulation C&ss are: 1,2,3 Class C: 4, 5, 6 Class B: 7, 8, 9 Class O: 10,11,12 Class A:
SF MF ML CL 13 34 610
.50
MI L-C-3901 O. An example type designation per this specification is: M I Military Designator 39010/01 A
Document Sheet Number
Insulation class
11-4
MIL-HDBK-217F
11.3 ,
INDUCTIVE
DEVICES,
DETERMINATION
OF
HOT
SPOT
TEMPERATURE
Hot Spot temperature can be estimated as follows: THS=TA+ where: THS TA AT = = = Hot Spot Temperature Average Temperature (C) (C) Rise Above Ambient (C) Inductive Device Ambient Operating Temperature 1.1 (AT)
AT can either be determined by the appropriate Temperature Rise- Test Method paragraph in the device base specification (e.g., paragraph 4.8.12 for M IL-T-27 E), or by approximation using one of the procedures described below. AT Approximation
Infnrmatinn .. ... .. ... .
.. ,
Knnwn
,., ,....
-,
AT Annrqximation w .
.yp.
1.
MIL-C-3901 O Slash Sheet Number MIL-C-39010/l C-3C, 5C, 7C, 9A, 10A, 13, 14 tvllL-c-39010/4C, 6C, 8A, 11, 12
AT = 15C AT = 35C AT= 125 w@
2.
Power Loss Case Radiating Surface Area Power Loss Transformer Weight Input Power Transformer Weight (Assumes 80% Efficiency)
3.
AT=
11.5 WL/(Wt.).6766
4.
AT = 2.1 w,/(w@66
w~
Power Loss (W) Radiating Surface Area of Case (in2). Transformer Weight (Ibs.)
Input Power (W) See below for MIL-T-27
A wt.
w,
= =
=
Case Areas
NOTE: Methods are listed in preferred order (i.e., most to least accurate). MIL-C-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating surface area, MIL-T-27 Case Radiating Areas (Excludes Mounting Surface) Case Case Area (in*) Area {in2) 4 GB 33 LB 7 43 GA LA
11 HB . 42 MB
Case AF AG
AH
Area (in2) 82 98
98
AJ EB EA FB FA
18 ;; 25 31
HA JB JA KB KA
53 58 71 72 84
MA NB ::
115
117
139 146
11-5
MIL-HDBK-217F
I
12.1
ROTATING
DEVICES,
MOTORS
I
I The following failure-rate model appiies to motors with power ratings betow one horsepower. This model is applicable to polyphase, capacitor start and run and shaded pole motors. Its application may be extended to other types of fractional horsepower motors utilizing rolling element grease packed bearings. The rndel is dictated by two failure modes, bearing failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and replaced and are not a failure mode. Typical appkations include fans and Mowers as well as various other motor applications. The model is based on Referenoe 4, which oontains a more comprehensive treatment of motor life precktion methods. The reference should be reviewed when bearing loads exceed 10 percent of rated bad, speeds exceed 24,000 rpm or motor back include motor speed slip of greater than 25 percent. The instantaneous failure rates, or hazard rates, experienced by motors are not oonstant but increase with time. The failure rate model in this sectbn is an average failure rate for the motor operating over time period t. The motor operating time period (t-hours) is selected by the analyst. Each motor must be replaced when it reaches the end of this perbd to make the calculated ~ valid. The averaga failure rate, ~, has been obtained by dividing the cumulative hazard rate by t, and can be treated as a constant failure rate and added to other part failure rates from this Handbook.
~2 %[ = UB 3+~
1 1
x 106 Failures/l 06 H0ur6
Bearing & Winding Characteristic Life - aB and aw

TA ~C) -40 -35 -30 -25 -20 -15 -lo -5 o 5 10 15 20 25 30 35 40 45 50 aB (Hr.) 310 310 330 370 460 660 1100 1900 3600 6700 13000 23000 39000 60000 78000 86000 80000 68000 55000
2357 2534 7A + 273 )
aw
(Hr.)
TA (oC) 55 60 65 70 75 80 85 E 100 105 110 115 120 125 130 135 140
aB (Hr.) 44000 35000 27000 22000 17000 14000
aw
(Hr.)
1.9e+08 1.2e+08 7.4e+07 4.78+07 3.1 e+07 2.0e+07 1.4e+07 9.2e+06 6.4e+06 4.5e+06 3.2e+06 2,3e+06 1.6e+06 1.2e+06 8.9e+05 6.60+05 5.oe+05 3.8e+05 2.9e+-5 1 4500 7A + 273
2.3e+05 1.8e+05 1.4e+05 1.1 e+05 8.8e+04 7.0e+04
11000
9100 7400 6100 5000 4200 3500 2900 2400 2100 1700 1500
5.7e+04
4.6e+04 3.8e+04 3.le+04 2.5e+04 2.1 e+04 1.8e+04 1.5e+04 1.2e+04 1.oe+04 8. 9e+03 7.5e+03
aB
= [
10 (
+ 2010 (
+ 300
-1 1
aw aB
aw TA t NOTE:
= =
s =
10
2357 [ TA + 273
1 .83]
Weibull Characteristic Life for the Motor Bearing Weibull Characteristic Life for the Motor Windings Ambient Temperature (C) Motor Operating Time Period (Hours)
See next page for method to calculate aB and aw when temperature is not constant.
12-1
MIL-HDBK-217F
12.1
ROTATING
DEVICES,
MOTORS
%.ala
Ilation Or cYcled eWr*ure
The following equation can be used to calculate a weghted (e.g., for bearings substitute aB for all as in equation). h1+h2+h3+------hm
characteristic life for both bearings and windings
hm + al where: a=
h, h2 h3 hm = = = =
+ a2
+------- a3
am
either (%Bor aw
Time at Temperature T, T, to T3
Time to Cycle From Temperature

Time at Temperature Time at Temperature Bearing Bearing (or Winding) (or Winding) T3 Tm Life at T, Life at T2
al 2
= =
T, + T3 NOTE: T2=2, T4=2
T3 + T,
T3 i= T2 T1 hl h2 h3
Hours Thermal
(h) Cycle
12-2
MIL-HDBK-217F
12.2
ROTATING
DEVICES.
SYNCHROS
AND
RESOLVERS
DESCRIPTION Rotating Synchros and Resolvers Lp = XbKSZNXE NOTE:
Failures/l 06 Hours
Synchros and resolvers are predominately used in service requiring only slow and infrequent motion. M-echanical wearout problenis are infrequent so that the electrical failure mode dominates, and no mechanical mode failure rate is required in the model above.
Base FaiUre Rate - ~ Tr (C) 30 35 40 45 50 55 60 65 70 75 80 .0083 .0088 .0095 .010 .011 .013 .014 .016 .019 .022 .027 TF (%) 85 90 95 100 105 110 115 120 125 130 135 .032 .041 .052 .069 .094 .13 .19 .29 .45 .74 1.3
Number Of Brushes Factor - ~N Number of Brushes 2 3 4 %N 1.4 2.5 3.2
Environment Factor - YIC=

L
Environment GB GF
~E
1.0 2.0 12 7.0 18 4.0 6.0 16 25 26 .50

14
% TF
= .00535 exp (T~:~3 = )85 Frame Temperature (C)
GM NS Nu
If Frame Temperature is Unknown Assume TF .40 C + Ambient Temperature
Aic
IF
*UC Size Factor - XS %s DEVICE TYPE Synchro I

Resolver I 3 2.25 1.5
UF *RW Size 18 or Larger 1 SF MF ML CL
Size 8 or Smalier 2
Size 10-16
1.5
36 680
12-3
MIL-HDBK-217F
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION Elapsed Time Meters
kp = kbycE
Failures/l 06
Hours
Base Failure Rate - ~ Type A.C. Inverter Driven Commutator D.C.
Environment Factor - Xr
b
k~ 20 30
Environment % GF GM
ZE 1.0 2.0 12 7.0 18 5.0 8.0 16 25 26 .50 14 38 NIA
80
N~ Nu *IC
Temperature
Stress Factor - ZT XT .5 .6 .8 1.0
Operating T (C)/Rated T (C) o to .5 .6 .8 1.0
IF *UC UF *RW SF MF ML CL
12-4
MIL-HDBK-217F
12.4 Example Given:
ROTATING
DEVICES,
EXAMPLE
Fractional Horsepower Motor operating at a thermal duty cycle of: 2 hours at 10OC, 8 hours at 20C, 0.5 hours from 100C to 20C, and 0.5 hours from 20C back to 100C. Find the average failure rate for 4000 hours operating time.
The basic procedure is to first determine operating temperature at each time intewai temperature when traversing from ow temperature to another, e.g. T2 = (100 + 20/2 = ~c. aB and aw at each temperature to use in the ~ e~ation. ati then use these vakes to determine a wei@kf
(or averge ~te~in and aw
average ~
h,
2 hr.
T, T2
T3
= =
=
1 OOC; 60%;
20C;
aB aB
aB
= =
=
6100 hours; 35000 39000

hOUfS;
aw aw aw
= = =
31000 180000
hours
hOUR
h2 = h4 = 0.5 hr. h3 = 8 hr.
hours;
1600000 hours
aB
2 6100
2 +0.5+8+0.5 0.5 8 + 35000 + 39000
0.5 + 35000
= 19600 hours
aw
2 31000
2 +0.5+8+0.5 0.5 8 + 180000 + 1600000
0.5 + 180000
= 146000
hOUB
(3++0
(
(4000)2 (19600)3 1 + 146000 X106 ) 9.0 FaihxeW 06 Hours
12-5
MIL-HDBK-217F
13.1 SPECIFICATION MIL-R-5757 MIL-R-6106 MI L-R-19523 MIL-R-39016
RELAYS,
MECHANICAL
MIL-R-19648 MIL-R-83725 MIL-R-83726
DESCRIPTION Mechanical Relay (Except Class C, Solid State Type)
Lp = &XLZCZCYCXFXQXE Base Failure Rate - ~

Rated
Failures/l
06 Hours Load Stress Factor - XL
Temperature 125c~ .0059 .0060 .0061
TA (W)
30 35 40 45 50 55 60 % 75 80 85 90 95 100 105 110 115 120
85%+
s
.05 .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.
I Resist ive
1.00 1.02 1.08 1.15 1.28 1.48 1.76 2.15 2.72 3.55
Load Typo lnductive2 1.02 1.06 1.28 1.?6 2.72 4.77 9.49 21.4 Lamp3 ; :Z 2.72 9.49 54.6
.0060 .0061 .0063

.0065 .0068 .0072 .0077 .0084 .0094 .011 .013 .016 .020
.0062 .0064
.0066 .0068 .0071 .0074 .0079 .0083 .0089 .0097 .011 .012 .013 .015 .018 .021 .025 .031
~2
,8
XL = @Xp ()
3.
S2
XL = exp ~
() s2~= ~
Operatino Load Current Rated Resistive Load Current
2.
~L = ep ()
125
For single devices
which switch two different load types, evaluate XL for each possible stress load type
1%= 2%=
TA .
005excA::73)57 00MexcAJ~73)04
Cycle Rate
(Cycles per Hour) Ambient Temperature (oC) 21.0 <1.0 Cycle Rate (Cycles per Hour) >1000 10-1000
combination and use the worse case (largest ZL).
Cycling Factor - ~YC

CYC (MI L-SPEC) i-io~ 10 0.1
WC
Contact Form Factor - ~
(Lower
Quality)
(Applies
to Active Conducti ng Contacts) Contact Form ~c I DPST 1.50 1.75 2.00 2,50 3.00 4.25 5.50 8.00
Cycles per Hour 2 100 ) (
Cycles per Hour 10
SPDT 3PST 4PST DPDT PDT 4PDT
NO~
:Values of ZCYC
for cycling rates beyond
the
basic design limitations of the relay are not valid. Design specifications should be consulted prior to
6PDT
Vauation f CYC.
13-1
I
I I
13.1
RELAYS,
h41L-HDBK-217F
MECHANICAL
Oualhy
R P x
% .10
I .30 .45
I
con~tion
i
Construction Type Dry Rwd
u M L Non-Est.Rol.
.60 :::
3.0
Ifbwmv[ d In@
I MofcuwWottod
6 11131.
18
I
ArmuW(lmngand 6 5 12
Envimnmont Factor -~
$tE ,
10
Environment
MIL-SPEC
LowOrOudity 2.0 5.0

I
GB %
GM NS i N
1.0
2.0 15 8.0 27
Poi8fizod
B8mcul Ammtuf6110 10 AwnmJro (short) 100 MwcuryWetted

ArrnmW@ (081anc0d A 6 9
20 20 100
2 M 12
u 24 78 15 20 20 36 140 5-20 w Elut mfiic Hqh Spood
*IC
A~
7.0
9.0 11 12
46
Auc %F
L&w I
Mching, MqymtiZ Mdiurn Uucury Wmttod B8bcod Arwnturo vaCwm (Gk!m) Vaafwl (CkmmiC) An I short]
Tiu90 Dd8y,
1 -1-1
5 5 20 5 10 10 40
SF %
% cl
.50 I
25 66 WA
1.0 72
10
IPm-
11
WA 2 7 12 6 z
CWMctom m Cwu?t)
1~
(short) Wchankd Latching OatuK#d Ann8tufo .
10
5 1
20
10 I
Iw
,.
=1
-.
MIL-HDBK-217F
13.2 SPECIFICATION MIL-R-28750 MIL-R-83726
RELAYS,
SOLID
STATE
AND
TIME
DELAY
DESCRIPTION Relay, Solid State Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum the failure rates for the individual components which make up the relay. The individual component failure rates can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has about the components being used. If insufficient information is available, the following cfefautt model can be used: ~ = ~X@E Failure@106 Hours
Base Faiiure Rate - ~ Relay Type Solid State Solid State Time Delay Hybrid .40 .50
Environment Factor - Xr Environment GB GF GM .50 NS Nu *tc nE 1.0 3.0 12 6.0 17 12 19 21 32 23 .40 12 33 590
Quality Factor - ZQ Quality IF ~Q Uc
MIL-SPEC Lower
1.0 4.0
*UF RW SF MF ML CL
13-3
, +
MIL-HDBK-217F
14.1 SPECIFICATION MIL-S-3950 MIL-S-8805 MIL-S-8834
SWITCHES,
TOGGLE
OR
PUSHBUTTON
MIL-S-22885 MIL-S-83731
DESCRIPTION Snap-action, Toggle or Pushbutton, Single Body
Failures/l Xp = kb7tcyc7cL7rc7zE
06 Hours
Base Failure Rate - ~ Description Snap-action Non-snap Action
Contact Form and Quantity Factor - xc 1 Lower Quality Contact Form SPST DPST SPDT 3PST 4PST DPDT 3PDT 4PDT 6PDT xc 1.0 1.5 1.7 2.0 2.5 3.0 4.2 5.5 8.0
MIL-SPEC .00045 .0027
I
I
*CYC 1.0
.034 .040
Cycling Factor - Zcyc

b
Switching Cycles per Hour s I Cycle/Hour
Environment Factor - nE >1 Cycle/Hour Number of Cycles/Hour Environment GB Load Stress Factor - ~L Stress s 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Resistive 1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4,77 Load Type Induct ive 1.02 1.06 1.28 1.76 2.72 4.77 9.49 21.4 Lamp 1.06 1,28 2.72 9.49 54.6 GF GM Ns NU Alc IF Uc *UF RW SF MF ML CL 25 67 1200 ~E 1.0 3.0 18 8.0 29 10 18 13 22 46 .50
s=
Operating Load Current Rated Resistive Load Current = = = exp (S/.8)2 exp (S/.4)2 exp (S/.2)2 for Resistive Load for Inductive Load for Lamp Load
XL XL ~L
NOTE: When the switch is rated by inductive load, then use resistive XL.
14-1
1,.,
*mm..
I,
,-
.AA1.4WI
.4
WI.*-
fi
.4Knw
MIL-HDBK-217F
14.2
SWITCHES,
BASIC
SENSITIVE DESCRIPTION Basic Sensitive
SPECIFICATION MIL-S-88f)5
Ap =L7C ~YCXLZE ~
Failures/l
06 Hours
Cycling Factor - ncyc Switching Cycles per Hour CYC 1.0
%=%JE%C
~ = ~E + n~
(if Actuation Differential is >0.002 inches)
(if Actuation Differential is <0.002 inches)
51 Cycle/Hour
n = Number of Active Contacts Description %E %C bO MIL-SPEC .10 .00045 .0009 Load StreSs Factor -XL Stress s 0.05 0.1 0.2 0.3 ::: 0.6 0.7 0.8 0.9 1.0 s= Resistive 1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77 Load Type Inductive 1.02 1.06 1.28 7.76 2.72 4.77 9.49 21.4 Lamp 1.06 1.28 2.72 9.49 54.6 Lower Quality .10 .23 .63
>1 Cycle/Hour
Number of Cycles/Hour I
Environment Factor - xc Environment GB GF % Ns N *IC IF Uc UF *RW SF MF 25 67 1200 1.0 3.0 18 8.0 29

10
18 13 22 46 .50
Operatin~ Load Current Rated Resistive Load Current = = = exp (S/.8)2 exp (S/.4)2 exp (S/.2)2 for Resistive Load for Inductive Load for Lamp Load
ML
Ci nL XL ~L
NOTE: When the Switch is Rated by Inductive Load, then use Resistive XL.
I 4-L
MIL-HDBK-217F
14.3 SPECIFICATION MIL-S-3786 kp = lb7ccycKL7cE
SWITCHES,
ROTARY
DESCRIPTION Rotary, Ceramic or Glass Wafer, Silver Alloy Cotiacts Failures/l 06 Hours

b
Cycling Factor - ~yc Switching Cycles per Hour CYC 1.0 I

> 1 Cycle/Hour
Base failure rate model (~: %=%E%F %=%E+~G (for Cemrnc RF Wafers) (for Rotary Switch Medium Power Wafers) n = Nu~r Description b E bF %G of Active co~ta~s MIL-SPEC .0067 .00003 .00003 Load stress Faotor - ~L Stress s 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 s. m
Resistive
s 1 Cycle/Hour
I
v
Number of Cycles/Hour
Lower Quality .10 .02 .06
Environment Factor - nEnvironment GB GF GM N~ Nu 1.0 3.0 18 8.0 29 10 18 13

22 46
Load Type
Inductive Lamp
1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77
1.02 1.06 1.28 1.76 2.72 4.77 9.49 21.4
1.06 1.28 2.72 9.49 54.6 1
Alc IF % UF RW SF MF ML , CL
.50 25 67 1200
Operating Load Current Rated Resistive Load Current = = exp (S/.8)2 exp (S/.4)2 exp (S/.2)2 for Resistive Load for Inductive Load for Lamp Load
XL XL
~L =
NOTE: When the Switch is Rated by Inductive Load, then use Resistive XL.
,.
MIL-HDBK-217F
14.4
SWITCHES,
THUMBWHEEL DESCRIPTION Switches, Rotary (Printed Circuit) (Thumbwheel, lnand Pushbutton) Zp = (~1 + XN %2) XCYCZLXE Failures/l 06 Hours
SPECIFICATION MIL-S-2271O Line
CAUTION:
This model applies to the switching function only. The model does not consider the contribution of any discrete components (e.g., resistors, diodes, lamp) which may be mounted on the switch. If significant
(relative to the switch failure rate), the failure rate of these devices must be calculated using the appropriate sectionof this Handbook and added to the failure rate of the switch.
This model applies to a single switch seotion. This type of switch is frequently ganged to provide the required function. The model must be applied to each section individually.
I
I
Base Failure Rate - kbl and %2 MIL-SPEC Description Lower Quality
Cycfing Factor- XCYC Switching Cycles

Der Hour
CYC
%1
b 2
.0067 .062
.086 .089
I
I
I
s 1 Cycle/Hour
1.0
Number of Cycles/Hour
> 1 Cycie/Hour
Number
of Active Contacts
Factor - ZN
I
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
~N = Number of Active Contacts
Environment Factor - x= Environment GB GF Lamp

1.06 1.28 2.72 9.49 54.6
~E
Load Stress Factor - ZI Stress s 0.05 Resistive

1.00 1.02 1.06 1.15 1.28 1.48 1.76 2.15 2.72 3.55 4.77
1.0 3.0 18
Load Type inductive

1.02 1.06 1.28 1.76 2.72 4.77 9.49 21.4
N~ Nu Aic IF Uc U F
8.0 29
10
18
13 22 46
s= XL
XL
Operating Load Current Rated Resistive Load Current =

=
RW SF MF
.50 25 67 1200
exp (S/.8)2
exp (S/.4)2
for Resistive
Load
for Inductive Load for Lamp Load
ML CL
XL NOTE:
exp (S/.2) 2
When the Switch is Rated by Inductive Load, then use Resistive XL.
14-4
MIL-HDBK-217F
14.5 SPECIFICATION M IL-C-55629 MIL-C-83363 MIL-C-39019 w-c-375 DESCRIPTION Circuit Breakers, Circuit Breakers, Circuit Breakers, Circuit Breakers,
SWITCHES,
CIRCUIT
BREAKERS
Magnetic, Unsealed, Trip-Free Remote Control, Thermal, Trip-Free Magnetic, Low Power, Sealed, TripFree Service MoJded Case, Branch Circuit and Service
I
= &cnUZQKE Base Failure Rate - ~ Description 1 Lb
I
Failures/l
06 Hours
Quality Factor - XQ Quality
*Q i
1
/ I
I
I
Magnetic I Thermal I
Thermal-Magnetic I
.020 .038
I
I
MIL-SPEC Lower
1.0 8.4 * Environment Factor - n=
.038
I
Environment GB 1.0 2.0 15 8.0 27 7.0 9.0 11 12 46 .50 25 66 tWA d
Configuration Configuration
Factor - XC Zc
GF SPST DPST 3PST 4PST 1.0 2.0 3.0 4.0 GM Ns Nu

An IF
Use Factor - m t
u
Use Not Used as a Power OtiOff Switch Also Used as a Power On/Off Switch
*UC lru *UF 1.0 *RW SF 10 MF ML CL
14-5
n7c
----
..A
Ann
MIL-HDBK-217F
I I
I
15.1
CONNECTORS,
GENERAL
(EXCEPT s M M M M M M M M M M
PRINTED
CIRCUIT
BOARD)
DESCRIPTION SPECIFICATION Rack and Panel M IL-C-24308 M IL-C-28748 IL-C-28804 .M M IL-C-83513 M Cimdar M L-C-5015 M IL-C-26482 M 1~ M L-C-38999 L-C-81 511 I q1JOTE: See following page for connector configurations.
EDIFICATION* .C-3607 .-c-3643 .-C-3650 .-c-3655 .-C-25516 .-(2-3901 2 .-C-55235 .-c-55339 .-C-3767 .-C-22992
DESCRIPTION Coaxial, RF
Power
MIL-C-49142
Triaxial, RF
Ap = AbZ~ZpnE Failures/l 06 Hours

APPLICATION NOTE: The failure rate model is for a mated pair of connectors. It is sometimes desirable to assgn half of the overall mated pair connector (i.e., single connector) failure rate to the line replaceable unit and half to the prediction to allow a chassis (or backplane). An example of when this would be beneficial is for input to maintainability failure rate weighted repair time to be estimated for both the LRU and chassis. This accounting procedure could be significant if repair times for the two halves of the connector are substantially different. For a single connector divide kp by two.

To (oC) Al .00006 Insert Material* f32 & .00025 .00033 .00044 .00057 .00073 .00093 .0012 .0015 .0019 .0023 .0029 .0036 .0045 .0056 .0070 .0087 .011 .014 .018 .022 .029 .0021 .0026 .0032 .0040 .0048 ,0059 .0071 .0087 .011 .013 .016 .020 .024 D4 .0038 .0048 .0062 .0078 .0099 .013 ,016 .020 .026 .033 .043 .056 .074 . ~=
(oontd)
.020 ~xp
~-lsgz.o
((0+=)+ ~0x73)53;
.00008
;:
30 40 50 60 70
80
90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250
.00009 .00011 .00014 .00016 .00020 .00023 .00027 .00032 .00037 .00043 .00050 .00059 .00069 .00080 .00094 .0011 .0013 .0016 .0019 .0023 .0028 .0034 .0042 .0053
2. ~=
.431
exp
((.+ 7)+ (R:y)

T-073.6
3. ~=
.190e~p
((0+4+ (%:7)42)
T-1298.0 ~-1528.8 ((0+27)+ ~0&:73)472)
4. ~ = .770 exp
To =
To =
Internal Contact Operating Temperature (C) Connector Ambient Temperature + Insert Temperature Rise
See folbwing page for Insett Temperature Rise Determination.
ff a mating pair of connectors uses two types of insert materials, use the average of the base failure rates for the two insert material types. See following page for inserl material determination.
MIL-HDBK-217F
15.1
CONNECTORS,
GENERAL
(EXCEPT
PRINTED
CIRCUIT
BOARD)
Insert Material Determination -Possible Insert Materials Conf guration Specification A B c D Rack and Panel MIL-C-28748 x M IL-C-83733 x MIL-C-24308 x x M IL-C-28804 x x MIL-C-83513 x x Circular I MIL-C-5015 MIL-C-26482 MIL-C-28840 MIL-C-38999 MIL-C-8151 1 MI L-C-83723 MI L-C-3767 MIL-C-22992 MI L-C-3607 MIL-C-3643 MIL-C-3650 MI L-C-3655 MIL-C-25516 MIL-C-39012 MI L-C-55235 MIL-C-55339 MIL-C-49142 x x x x x x x x x x x x x x x x : x x x
x x x
Power
I
x x
Insert Tempe rature Rise (AT I ) Determination ContacI 12 16 20 1 2 T 1 2 5 8 3 13 4 4 8 13 19 5 ; 5 18 27 6 3 8 7 4 10 23 36 46 13 30 8 5 16 57 9 37 6 70 10 7 45 19 41 15 15 96 70 26 20 25 106 39 54 30 72 35 40 92 w AT AT AT AT AT i = = = = =

=
Coaxial
0.989 (i)l 85 0.640 (i) 85 0.274 (i) 85 0.100 (i)l 85
22 Gauge Contacts 20 Gauge Contacts

16 Gauge Contacts
12 Gauge Contacts
Insert Temperature Rise

Amperes per Contact
Triiial Insert Material Type A B
RF Coaxial Connectors Common Insert Materials Vitreous Glass, Alumina Ceramic, Polyimide Diallylphtalate, Melamine, Fluorosilicione, Silicone Rubber, Polysulfone, Epoxy Resin Polytetrafluorethy lene (Teflon), Chbrotrifluorethylene (Kel-f) Polyamide (Nylon), Polychloroprene Temperature Ran~e (C)* -55 to 250 -55 to 200 RF Coaxial Connectors (High Power Applications)
AT= 5C
AT = 50C
Mating/Unmating -55 to 125 Mating/Unmating Cycles* (per 1000 hours) o to .05 > .05 to .5 >.5t05 >5t050 > 50
Factor - KK nK 1.0 1.5 2.0 3.0 4.0

and disconnect.
D ~ne
-55 to 125
These temperature ranges indicate maximum =pability of the insert material only. Connectors Jsing these materials generally have a reduced emperature range caused by other considerations of :onnector design. Applicable connector specifications contain connector operating emperature range,
One cycle includes both connect q
I
MIL-HDBK-217F
I
I
I
15.1
CONNECTORS,
GENERAL
(EXCEPT
PRINTED
CIRCUIT
BOARD)
Active Pins Factor - n

Number of Active Cent acts
Environment Factor - XE
~E
Xp
1.0 1.4 1.6 1.7 ;:: ::: 2.4 2.6 2.7 2.9 3.0 3.1 3.3 3.4 3.6 3.7 3.9 4.0 4.8 5.6 6.5 7.4 8.4 9.5 11 12.
Number of Active
Contacts 65 70 75 80 85 90 95 100 105 110

115 120
Environment
13 15 16 18 E 23 25 27 30 32 35 37 40 43 46 50 53 57 61 65 69 74 78 83 89 94 100
MIL-SPEC 1.0 1.0 8.0 5.0 13 3.0 5.0 8.0

12 19
Lower Quality 2.0 5.0. 21 10 27 12 18 17

25 37
GB GF % Ns Nu *IC % %c
UF RW
; 3 4 5 6 : 9 10 11 12 13 14 15 16 17 18 19 20 25 30 35 40 45 50 55 60
125
130 135 140 145 150 155 160 165 170 175 180 185 190 195 200
SF MF ML CL 10 27 490
.50 20 54 970
.80
q N
= =
0.51064 Number of Active Contacts
An active contact is the conductive element in a oonnector which mates with another element for the purpose of transferring electrical energy. For
ooaxial and triaxial oonneotors, the shield contact k oounted as an active contact.
15-3
MIL-HDBK-217F
15.2
CONNECTORS,
PRINTED
CIRCUIT
BOARD DESCRIPTION One-Piece Connector Two-Piece Connector Failures/l 06 t-iours mrature Ri: ! (AT C) Determination c tntad Guac 26 22 20
I
Base Faiture Rate - L To (C) o 10 20 30 40 50 60 70 80 90 100 .00012 .00017 .00022 .00028 .00037 .00047 .00059 .00075 .00093 .0012 .0015 To (<) 110 120 130 140 150 160 170 180 190 200
Ab
Connector Ter Amperes Per Contact

1
.0018 .0022 .0028 .0035 .0044 .0055 .0069 .0088 .011 .015
2 3 4 5
2 8 16 27 41
1 4 8 13 19
1 2 5 8 13
AT = 2.100 (i).85 AT = 0.989 (i)l .85 AT = 0.640 (i)-85
26 Guage Contacts 22 Guage Contacts 20 Guage Contacts
AT = Contact Temperature Rise

i =
Amperes per Contact
To = Internal Contact Operating
Temperature
(C)
Mating/Unmating lvlating/Unmating Cycles* (Perl 000 Hours) o to .05 > .05 to .5 >.5t05 >5t050 >50
Factor - XK
1.0 1.5 2.0 3.0 4.0
A cycle is defined as the mating and unrnating of a connector.
15-4
MIL-HDBK-217F
15.2 Active Pins Factor - z

Number of Active Contacts 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 25 30 35 40 45 50 55 60 Number of Active Contacts
CONNECTORS,
PRINTED
CIRCUIT
BOARD
~E
*P
Environment 13 15 16 18 19 :; 25 27
30 32 35 37 40 43 46 50 53 57 61 65 69 74 78 :; 94 100
MIL-SPEC 1.0 3.0 8.0 5.0 13 6.0 11
Lower C?ualit~ 2.0 7.0 17 10 26 14 22 14 22 37
1.0 1.4 1.6 1.7 1.9
GB GF GM Ns Nu Alc
% 75 80 E 196 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 185 190 195 200
2.0 ::: 2.4 2.6 2.7 2.9 H 3.3

3.4 3.6 3.7 ::: 4.8 5.6 6.5 7.4 !; 11 12
*UC *UF RW SF
MF
6.0 11 19 .50 10 27 490
.80 20 54 970
ML c,
np =
=
exp
()
~
N-1
c1
0.51064 Number of Active Pins
15-5
MIL-HDBK-217F
SPECIFICATION MIL-S-83734 Failuresll
DESCRIPTION IC Sockets, Plug-in 06 Hours
P = %ZPXE
Base Failure Rate - ~ I Type All MIL-S-83734 ?b~ .00042
Environment Factor - XE r I Environment GB GF GM ~E 1.0 3.0

14
Active Pins Factor - np

Number of Active contacts
INS 7tp Nu Alc IF *UC *UF RW SE MF ML
6.0 18 8.0
12 11 13 25
6 8
10
2.0 2.3
2.6 3.1 3.4 3.7 4.0 4.3 4.6 5.3 6.7 7.4
9.1
14 16 18 20 22 24 28 36 40 48 50 64
.50 14 36 650
9.5 13
CL
np q N
= = =
exp
()
N-1 ~
0.51064
Number of Active Contacts
15-6
-.
---
---
.-
MIL-HDBK-217F
16.1
INTERCONNECTION
ASSEMBLIES
WITH
PLATED
THROUGH
HOLES
DESCRIPTION Circuit Boards, Printed (PCBS) and Discrete Wiring
Ap = Lb N1 xc [
+ N2 (ZC
+ 13)]
~Q~E
Failures/106
Hours
APPLICATION NOTE: For assemblies not using Plated Through Holes (PTH), use Section 17, Connections. A discrete wiring assembly with electrokms deposit plated through holes is basically a pattern of insulated wires laid down on an adhesive coated substrate. The primary cause of failure for both printed wiri~ and discrete wiring assemblies is associated with plated through kle pr6blems (e.g., barrel cracki~). Base Failure Rate - ~ Technology Printed Wiring Assembly/Printed Circuit Boards with PTHs Discrete Wiring with Electroless Deposited PTH (s 2 Levels of Circuitry) i~bl Qud@ ~actor Quality MIL-SPEC or Comparable Institute for Interconnecting, and Packaging Electronic Circuits (lPC) Standards Lower
fiQ
nQ 1
II
&
II
.000041
.00026 2
Number of PTHs Factor - N, ard NFactor N, Quantit~ Quantity of Wave Soldered Functional PTHs Quantity of Hand Soldered PTHs I Complexity Factor - Zn Number of Circuit Planes, P 52 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Discrete Wiring w/PTf-i Xc = .65 P.m 1.3 1.6 1.8 2.0 2.2 2.4 2.6 2.8 2.9 3.1 3.3 3.4 3.6 3.7 1 2sPs16 I Environment Factor - nE Environment GB I 7CC 1.0 2.0 7.0 5.0 13 5.0 8.0 16 28 19 .50 10 27 500
N2
GF GM Ns Nu
AC IF
Uc *UF RW SF MF ML c,
MIL-HDBK-217F
17.1
CONNECTIONS
DESCRIPTION Connections Used on All Assemblies Except Those Using Plated Through Holes (PTH)
APPLICATION NOTE: The failure rate model in this section applies to connections used on all assemblies except those using plated through holes. Use the Interconnection Assembly Model in Section 16 to account for connections to a circuit board using plated through hole technology. The failure rate of the structure which supports the connections and parts, e.g., non-plated-through hole boards and terminal straps, is considered to be zero. Solderless wrap connections are characterized by solid wire wrapped under tension around a post, whereas hand soldering with wrapping does not depend on a tension induced connection. The followiW model is for a single co~nection. -~ = ~ZQZE
Failures/l 06 Hours
Base FaiJure Rate - L

!
Environment Factor - ZF Environment fiE 1.0 2.0 7.0 4.0 11 4.0 6.0 6.0 8.0 16 .50 9.0 24 420
Connection
Type * .00014 .00026 .00005 .0000035 .00012 .000069
Hand Solder, w/o Wrapping Hand Solder, w/Wrapping Crimp Weld Solderless Wrap Clip Termination Reflow Solder
GB GF GM N~ Nu *IC IF
Quaiiiy Factor - XO Quality Grade Crimp Types Automated

~Q
C;mments
1,0
q
Uc Daily pull tests recommended. UF %w sF
Manual Upper
1.0
Only MIL-SPEC or equivalent tools and terminals, pull test at beginning and end of each shift, color coded tools and terminations. MIL-SPEC tools, pull test at beginning of each shift. Anything less than standard criteria.
MF ML CL
Standard
2.0
Lower
20.0
411 Types
~xcept Crimp
1.0
17-1
,,
MIL-HDBK-217F
18.1 SPECIFICATION MIL-M-103O4
METERS,
PANEL
DESCRIPTION Meter, Electrical Indicating, Panel Type, Ruggedized Failures/l 06 Hours
= %nAzFnQzE

Type
QuaI@ Factor - ~ Quality .090 M IL-M-1 0304 Lower I nQ 1.0 3.4
All
Application Factor - ~A Application

Direct Current Alternating Current
I
1.0 1.7
Environment Factor - XF Environment GB GF %! ~E 1.0 4.0 25 12 35 28 42 58 73 60 1,1 60 NIA N/A
Function Function Ammeter Voltmeter
Factor - ~F 1 ~F
Ns Nu Alc IF
1.0
1.0
I
Uc UF RW
Other*
2.8
Meters whose basic meter movement construction is an ammeter with associated conversion elements.
SF MF ML CL
18-1
MIL-HDBK-217F
19.1 SPECIFICATION MIL-C-3098 DESCRIPTION Crystal Units, Quartz
QUARTZ
CRYSTALS
Lp = AbXQnE Failures/l
06 Hours
Base Failure Rate - ~ Frequency, f(MHz) 0.5 I Lk

u
Environment
Factor - xc
L
Environment G~ GF GM NS NU Aic iF Uc UF %w SF MF ML CL
~E 1.0 3.0 10 6.0 16 12 17 22 28 23 .50 13 32 500
1.0
.011
.013 .019 .022 .024 .026 .027 .028 .029 .030 .031 .032 .033 .033 .034 .035 .035 .036 .036 .037 .037 .037 .038
5.0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
Ab =
.o13(f).23
Quality Factor - xfi

u
fiQ 1.0 2.1
19-1
______ _ ___ _____ __
MIL-HDBK-217F
20.1 SPECIFICATION MIL-L-6363 W-L-1 11
LAMPS
DESCRIPTION Lamps, Incandescent, Aviation Sewice Lamps, Incandescent, Miniature, Tungsten-Filament
kp = ~~u~A~E
Failures/l
06 Hours
NOTE: The data used to develop this model included randomly occurring catastrophic APPLICATION failures and failures due to tungsten filament wearout. Base FaiUre Rate - ~ Rated Voltage, Vr (Votts) 5 6 12 14 24 28 37.5
Ab
Environment Factor - m~ . Environment GB GF GM NS Nu *IC %E 1.0 2.0 3.0 3.0 4.0 4.0 4.0 5.0 6.0 5.0 .70 4.0 6.0 27
.59 .75 1.8 2.2 4.5 5.4 7.9
I
Ab = .074(vr) 29
IF Uc UF
Util@ion
Factor- nu
*RW SF MF
Utilization (Illuminate Hour# Equipment Operate Hours) < 0.10 0.10 to 0.90 > 0.90 0.10 0.72
ML cL
1.0
Application Factor - ~A Application Alternating Current Direct Current 1.0 3.3
20-1
a..
11
MIL-HDBK-217+
21.1 SPECIFICATION MlL-F-l 5733 MIL-F-18327
ELECTRONIC
FILTERS,
NON-TUNABLE
DESCRIPTION Filters, Radio Frequency Interference Fitters, High Pass, Low Pass, Band Pass, Band Suppression, and Dual Functioning (Non-tunable)
The most accurate way to estimate the failure rate for electronic fitters is to sum the failure rates tor the individual compments which make up the filter (e.g., ICs, diodes, resistors, etc.) using the appropriate models provided in this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to determine individual component failure rates. If insufficient information is available then the following defautt model can be used. ~=%~xE Failures/l 06 Hours
Base Failure Rate - ~ Type

MlL-F-l
Ab Environment GB GF GM .12 NS NU .12 ~E 1.0 2.0 6.0 4.0
5733, Ceramic-Ferrite
.022
Construction (Styles FL 10-16, 22, 24, 30-32, 34, 35, 38, 41-43, 45, 47-50, 61-65, 70, 81-93, 95, 96) MlL-F-l 5733, Components, Discrete LC (Styles FL 37, 53, 74)
9.0 7.0 9.0 11

13 11 .80 7.0 15
MlL-F-l 8327, Discrete LC Components (Composltlon
*IC IF
1)
.27
M IL-F-18327, Discrete LC and Cfystai Components (Composition 2)
Uc *UF
RW SF MF
Quality Factor - ~
ML
1
Quality
CL
120
MiL-SPEC
1.0 2.9 I
Lower
21-1
l\
----
MIL-HDBK-217F
22.1 SPECIFICATION W-F-1726 W-F-1814 MIL-F-5372 ML-F-23419 MIL-F-15160 DESCRIPTION Fuse, Caftridge Class H Fuse, CaMdge, High Interrupting Capacity Fuse, Current Limiter Type, Aircraft Fuse, Instrument Type Fuse, Instrument, Power and Telephone (Nonindicating), Style FO1
FUSES
+)
%Eai1ure@106Wrs
APPLICATION NOTE: The reliability modeling of fuses presents a unique problem. Unlike most other components, there is very little correlation between the number of fuse replacements and actual fuse failures. Generally when a fuse opens, or blows, - something else in the circuit has created an overload condition and the fuse is sknply functbning as designed. This model is based on life test data and represents fuse open and shorting failure modes due primarily to mechanical fatigue and corrosion. A short faiture mode is most cornmonty caused by electrically conductive material shorting the fuse terminals together causing a failure to open condition when rated current is exceeded.
Base Failure Rate - &

Type
Environment
Factor - TCF
Environment
~E
1.0
W-F-1726, W-F-1814, MIL-F5372, MIL-F-23419, ML-F-151 60
.010
%
GF
2.0 8.0 5.0 11 9.0 12 15 18 16 .90 10 21 230 J
% NS Nu AC IF
Uc
*UF *RW SF MF ML CL
22-1
I I
MIL-HDBK-217F
I
23.1 L MISCELLANEOUS PARTS
- Failure Rates for Miscellaneous Parts (Failure@ 106 Hours) Failure Rate
Vibrators (M IL-V-95) 60-cycle 120-cycle 400-cycle
15 20 40
Lamps Neon Lamps
0.20
Fiber Optic Cables (Single Fiber Types Only)
0.1 (Per Fiber Km)
Single Fiber Optic Connectors*
0.10
Microwave Elements (Coaxial & Waveguide) Attenuators (Fixed & Variable) Fixed Elements (Directional Couplers, Fixed Stubs & Cavities) Variable Elements (Tuned Stubs & Cavities)
See Resistors, Negligible
Type RD
0.10 0.10x z~
0.20 x ~E O.10x?tE
Microwave Ferrite Devices Isolators & Circulators (S100W)

Isolators & Circulators Phase (>100W)
Shifter (Latching)
Dummy Loads < 1 Oow 1Oow to < 1Ooow > 1000W
0.010 x ~E 0.030 x n~ 0.10 x ZE 0.030 x fiE
Terminations (Thin or Thick Film Loads Used in Stripline and Thin Film Ckcults)
Caution: Excessive Mating-Demating
Cycles May Seriously Degrade Reliability
23-1
MIL-HDBK-217F
23.1 MISCELLANEOUS PARTS
Environment Factor - X,..

.V. V..-v . W.O, .V -w..-
(Durnmy ~E 1.0 2.0 8.0 5.0 12 Environment
Load
Environment GB GF GM NS Nu
GB GF GM N~
1.0
2.0 10 5.0 17 6.0 8.0 14 22 25 .50 14 36 660
N
AC
*IC IF Uc
UF RW
5.0 8.0 7.0

11 17
IF
*UC
UF *RW
SF
MF ML CL 24 450
.50 9.0
SF MF ML
I {
c,
23-2
MIL-tiDBK-217F
APPENDIX A: PARTS COUNT RELIABILITY PREDICTtON
Parts Ccxmt Rellablllty Prediction - This prediction method is applicable during bid proposal and early design phases when insuff-kient information is avaitable to use the part stress analysis models shown in the rndn body of this Handbook. The information needed to apptythe method is (1) generk pal ws (includlng complexity for mkrodrcults) and quantities, (2) part quallty levels, and (3) equipment environment. The equipment failure rate Is obtained by looking up a generic failure rate in one of the following tables, muttiptying it by a qualityfactor,and then summing it with failure rates obtained for other components in the equipment. The general mathematkal expressbn for equipment failure rate with this method is:
Equation 1
for a given equipment environment where: EQUIP = = = = Total equipment failure rate (Failure@l 06 Hours) Generic failure rate for the i h generk part (Failures/106 Quality factor for the i h generic part Quantityof i h generk part Number of different generk part categories in the equipment Hours)
9
7LQ
Ni n
Equation 1 applies if the entire equipment is being used in one environment. If the equipment comprises several units operating in different environments (such as avionics systems with units in airborne inhabited (Al) and uninhabited (Au) environments), then Equation 1 should be applied to the portions of the equipment In each environment. These environment-equipment failure rates should be added to determine total equipment failure rate. Environmental symbols are defined in SeCtion 3. The quality factors to be used with each part type are shown with the appkabk ~ tables and are not
necessarily the same values that are used in the Parl Stress Anatysis. Microcircuits have an additional multiplying factor, ~L, which accounts for the maturfty of the manufacturing process. For devices in production two years or more, no rrmdiiition should be ndtiplied is needed. For those kI production less than two years, ~ by the appropriate XL factor (see page A-4).
ft should be noted that no generic failure rates are shown for hybrid mkrocimdts. Each hybdd is a fakfy unique devke. Since none of these devkes have been standardized, their complexity cannot be determined from their name or function. Identically or similarly named hybrids can have a wide range of complexity that thwarts categorization for pufposes of this prediction method. tf hybrids are anticipated for a design, their use and construction should be thoroughly investigated on an individual basis with application of the predktbn model in Section 5. The failure rates shown In this Appendix wem calculated by assigning model defautt values to the failure rate modets of Section !5through 23. The speclfk defaultvaJues used for the model parameters are shown with the ~ Tabtes for mkrocimults. Default parameters for atiother part cfasses are summarized in the tables startifi on Page A-12. For parts with characterfstks which differ significantly from the assumed defaults, or parls used in large quantities, the underlying models in the main body of this Handbook can be used.
A-1
I MIL-HDBK-217F
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MIL-HDBK-217F
APPENDIX
B:
VHSJC/VHSIGLIKE
AND
VLSI CMOS
(DETAILED
MODEL) It
This appendix contains the detaibd versbn of the VHSICMSI CMOS model contained in Sectbn 5.3. is provided to albw more detailed device level design trade-offs to be acxmmplkhed for predominate failure modes and mechanisms exhibited in CMOS devices. Reference 30 should be consulted for a detailed derivation of this model. CN~ ~,(t) + ~t) + ~(t) + ~~(t) + ~.~ RATUSWL + ~~ + ~~(t)
Lp(t)
Ip(t) Aox(t) q-Jt) kc(t)
Pred.kted Failure Rate as a Function of Time Oxide Failure Rate Metallization Failure Rate Hot Carner Failure Rate Contamination Failure Rate Package Failure Rate EOS/ESD Failure Rate
~~~(t)
k PAC % SD q~(t)
Miscellaneous Failure Rate
The equations for each of the above failure mechanism failure rates are as follows:
A %YPEO)(
-7.7 to) (+ox)

~
Lox (in F/l 06) =
AR
OR )[
(.0788 e
(e -7.7 AToxt )
5 .399 exp ~ + (t+to)a~x (( =Ox A TYPEOX = = Total Chip Area (in cr#) .~
In (t + to) - In t500x )
2 )1
for Custom and Logic Devices, 1.23 for Memories and Gate Anays
MIL-HDBK-217F
APPENDIX
B:
VHSIC-VHSIC-LIKE
AND
VLSI
CMOS
(DETAILED
MODEL)
AR
.21 cm2 2 where X. = 2 w and X~ is the feature
Doox
Oxide Defect Density (tf unknown, use size of the device)
% ()%
DR to
1 Def ect/cm2 Effective Screening Time (Actual Time of Test (in 106 hrs.)) (ATOX (at Junction s~eenjm
tern.) (in ~))
Tox
Temperature
Acceleration Factor, =
exp
3 - (+ [ 8.6 I7x1O 5
- *)]
(where TJ = Tc + 9JCP (in K)) 1
%(-JX
-192
(~
- *)
Eox
Maimm MV/cm) 1.3x1022
power
&Jppiy
Votbge VDD, divided by the gate oxide thickness
(in
(QML)
t500x
ATOX Vex (QML)
(in 106 hrs.)
= 2 if on CNL, .5 if not.
~ox
Sgma obtained fmm test data of oxide faibres fmm the same or similar process. If not avaiiable, use a Oox value of 1.
time (in 106 Hours)
B-2
MIL-HDBK-217F
APPENDIX
B:
VHSIC/VHSIGLIKE
AND F FQw
VLSI
CMOS
(DETAILED
MODEL)
&
= [
A %YPEMET AR
OMET R
~ 00102 -
~-1 8 O)(A ,~E~(e-.8TME+ )
+[(,+;fl=e.P[~( l.(t+to)-,.t50METfJ
=
= Total Chip Area (in cm
.88 for Custom and Logic Devices, 1.12 for Memory and Gate Arrays
.21 cm2
Xo
2 where ~ = 2 pm and X~ is the feature size of
OMET
Metal Defect Density (tf unknown use ()

x~
the device) = = 1 Defect/cm* Temperature Acceleration Factor
exp [ 8.6;yj0-5 (~ - A)] (TJ
=TCASE +,JcP
(inOK)~
= =A
Effective Screening Time =
(in 106 hrs.)

q
(at Screening Ternp (in K)) .388 (Metal TME Type)
(Actual Scmenhg
Tune (in 106 hrs))
50MET
(QML)
(in 106 hrs.)
J2 A
(QML) = 2 if on QML, .5 if not. Metal Type = 1 for Al, 37.5 for AI-CU or for A1-Si-Cu J a WT u = The mean absoMe value of Metal Current Density (in 106 Amps/cm2) failures from the same or a similar
slgrna otXained from test data on electmnigration process. If this data is not available use cm = 1.
time (in 106 hrs.)
B-3
MIL-HDBK-217F
APPENDIX
B:
VHSIGVHSIGUKE
AND VLSI
CMOS
(DETAILED
MODEL)
-.5 %c 2 (
In (t + to) - In t50 HC
)1
50HC
(QML)3.74XI THC d
0-5
$u Q -2.5
()
Id
(QML) = 2 if on QML, .5 if not
.039 % tic = exp [ 8.617x10-5
Id sub
Drain Current at Operating Temperature.
If unknown use id = 3.5 e 0057J If unknown use
in K)
(WV
Substrate Current at Operating Temperature. Isub = .0058 e -OOWg J (in K) (mA)
% to
sgma derived from test data, if not available use 1. ATW (at wreening time (in 106 hrs.) Temp. (in K))
q
(Test Duration in 106 hours)
ATIC)N F~~TlOf!l --0028 to AT~N e -.0028 ATCON t
%hl
.000022 e
-,0exp [ 8.617x1O 5
[+
-4$1 (where TJ = Tc + 8JCP (in K))
to
Effective Screening Time ATmn (at screening junotion temperature (in K)) (actual screening time in 106 hrs.)
time (in 106 hrs.)
B-4
MIL-t-iDBK-217F
APPENDIX
B:
VHSIC/VHSIGLIKE
AND
VLSI
CMOS
(DETAILED
MODEL)
%AC fiE
7CQ
= =
=
(.0024 + l.=
x 10-5 (spins)) ~
~T
+ ~~
See Section 5.10 See Sectbn 5.10
Package Type DtP Pin Grid May Chip Carner (Surface MOUM T=hno~y)
npT 1.0 2.2 4.7
PH %
Package Hermetidty Factor O for Hermetic Packages -.5 399 exp t~~ [(~PH2
PH
In(t) - In(tsop))g for plastc packages
%0
86x
Pt+
10-6 exp
2 - (; [ 8.617x1O 5
- *)]
2.96 exp ~
[1
TA
ArWent
Temp. (in K)
(mL230[+ + -+1
.74 time (in 106 hrs.)
(l-DC)(RIi) whereTJ= Tc + eKp OnK)
(for example, for 50% Relative Humidity, use RH = .50)
B-5
MIL-HDBK-217F
APPENDIX
B:
VHSIGVHSIGLIKE
AND
VLSI
CMOS
(DETAILED
MODEL)
-.0002
VTH
%0s
- OOo:;&-
VTH = ESD Threshold of the device using a 100 pF, 1500 ohm discharge model
MIS
(.01 e
2.2 ~) ~ATMl~ ) (e -2.2 ATMIS t,
TMIS =
= Temperature Acceleration Factor -.423 [ 8.6317x10-5 (+ - A)]
exp
where TJ = Tc + eJcP (in K)
to = = t=
Effective Screening Time ATMl~ (at Screening Terrp time (in 106 hrs.) (in K))
q
Actual Screening Time (in 106 hours)
B-6
-an
AC
MIL-HDBK-217F
APPENDIX
C:
BIBLIOGRAPHY
Publications tisted with AD nunbers National Technical hlfOtiiOfl 5285 Port Royal Road ~@eM, VA 22151 (703) 487-4650
may be obtained trom: Service
U.S. Defense Contractors may obtain copies from: Defense Technical Information Center Cameron Station - FDA, Bldg. 5 Alexandria, VA 22304-6145 (703) 274-7633 Documents with AD number prefix with the letter B or with the suffix L: These documents are in a Limfted Distributbn category. Contact the Defense Technical Information Center for_ procedures. Copies of MIL-STDSS, MIL-HDBKs, and specifications are available from: Standardization Document Order Desk 700 Robins Ave. Buikfing 4, Section D Philadelphia, PA 19111-5094 (215) 697-2667 The year of publiition of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC)) documents is part of the RADC (or FL) nunber, e.g., RADGTR-66-97 was published in 1968. 1. 2. 3. 4. 5. Laser Reliability Prediction, RADC-TR-75-21 O, AD A016437. AD A013735.
ReliabiMy Model for Miniature Blower Motors Per MIL-B-23071 B, RADC-TR-75-178, High Power Microwave Tube Reliability Study, FAA-RD-76-I Electric Motor Reliabii~ Development Model, RADC-TR-77406, 72, AD AO033612.
AD A0501 79. AD A050678.
of Nonelectronic Part Cyclic Failure Rates,RADC-TR-77417,
This study devebped 6.
new faiture rate models for relays, switches, and connectors. RADC-TR-~432, AD A050180.
Passive Device Failure Rate Models for MIL-HDBK-217B,
This study developed new failure rate models for resistors, capacitors and inductive devices. 7. 8. 9. 10. 11, Quantification of Printed Circuit Boatd Connector ReWMtty, Crimp Connection Reliability, RADC-TR-78-15, LS1/Micmprocessor A Re@nda~ Reliabilii AD A050505. RADC-TR-79-97, AD A06891 1. RADC-TR-77-433, AD A049980.
Prediction Model Development, AD A050837.
Notebook, RADC-TR-77-287,
Revision of Environmental Faofors for MIL-HDBK-217B,
RADC-TR-80-299,
AD A091837.
L-1
MIL-HDBK-217F
APPENDIX
C:
BIBLIOGRAPHY
12. 13.
Traveling
Wave Tube Failure Rates,- RADC-TR-80-288,
AD A096055. AD A090029.
Reliability Predict&n Modeling of blew Devices, - RADC-TR~237, This study devebped mernortes.
failure rate nmdek for magnetic bubble memories and charge~upkf
14. 15.
Failure Rates for Fiber Optic Assemblies, RADC-TR-80-322, Printed Wiring Assembly and Interconnection
AD A092315.
ReliabMfy, RADC-TR-81 -318, AD Al 11214.
This study dwebped faihn fate modets for printed wtrfng asae~s, solderless wrap assanbfies, wrapped and soldered assemblies and discrete wirfng assemblies with ebctroless depostted plated through holes. 16. 17. 18. Avionio Etimentat F_ for MIL-HOBK-21 7, RADC-TR-81 -374, AD B084430L. 72, AD Al 18839. 08, AD Al 35705.
RADC Thermal Guide for Reliability Engineers, RADC-TR-82-1
Reliability Modeling of Critical Electronic Devices, RADC-TR-83-1
This report devebped failure rate prediction procedures for magnetrons, vidicions, cathode ray tubes, semiconductor lasers, helium-cadtim lasers, heiiim-neon lasers, Nd: YAG lasers, electronic filters, sofid state relays, time delay relays (electronic hybrid), circuit breakers, I.C. Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps, neon gbw lamps and surface acoustic wave devices. 19. This study developed failure rate models for nonoperating periods.
20.
RADC Nonelectronic Reliability Notebook, RADC-TR-85-194,
AD A163900.
This report contains failure rate data on rnechanicaf and electromechanical parts.
21.
Reliabilii
Prediction for Spacecraft, RADC-TR-85-229,
AD A149551.
TMs study kwestigated the reliability performance h@ories of 300 Satellite vehicles and is the basis for the halving of all model %E factors forMIL-HDBK-217E to MIL-HDKB-21 7E, Notice 1. 22. Surface Mount Technology: A Reliability Review; 1986, Available from Reliabilii PO BOX 4700, Rome, NY 13440-8200, 800-526-4802. Thermal Resktames AD B1084I7. of Joint Army Navy (JAN) Certified Microcimuif Pa&ages, Anatysis Center,
23.
RADC-TR46-97,
24.
Large Scale Memory Emr

This
Detection and Correction? RADC-TR-87-92,
AD B1 17785L.
study developed models to cakwlate memory system reliiility for memories incorporating error detecting and correcting codes. For a summary of the study see 1989 IEEE ReliabiMy and Maintainability SymposUm Proceedings, page 197, Accounting for Soft Errors in Memory Reliability Prediiion.a
25.
Reliability Analysis of a Surface Mounted Package Using Finite Element Simulation, RADC-TR-87177, AD A189488.
c-2
MIL-HDBK-217F
APPENDIX
C:
BIBLIOGRAPHY
26. 27. 28.
VHSIC Impact on System Reliability, RADC-TR-86-13,
AD B122629. AD A193759. AD A200529.
Reliability Assessment of Surface Mount Technology, RADC-TR-68-72, Reliability Prediction Models for Discrete Semiconductor
Devices, - RADC-TR-88-97,
This study developed new failure rate prediction modets for GaAs Power FETS, Transient Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator D-. 29.
30.
Inqxmt of Fiber Optics on System Reliability and Maintainabilii, VHSWVHSIC Like Rel&bi14y Prediotlon Modeling, RADGTR-69-I
RADC-TR-88-124, 71, AD A214601.
AD A2CH946.
This study provides the basis for the VHSIC model appearing in MIL-HDBK-21 7F, Section 5. 31. Reliability Assessment Using Finite Element Techniies,m RADC-TR-89-281, AD A21 6907.
This study addresses surface mounted solder interconnections and miorowire boards platedthru-hole (PTH) connections. The report gives a detailed account of the factors to be considered when performing an FEA and the procedure used to transfer the results to a reliability figure-of-merit. 32. Reliability Analysis/Assessment of Advanced Technologies, RADC-TR-90-72, ADA 223647,
This study provides the basis for the revisedmicmchwit Memories) appearing in MIL-HDBK-217F, Sectii 5. 33.
models (except VHSIC and Bubble
Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices, AFWAL-TR-811052, Reliability/Desgn Thermal Applications, MIL-HDBK-251.
34. 35.
NASA Parts Application Handbook, MIL-HDBK-976-B (NASA). This handmok is a five vohnne series which dfscusses a full range of eiectrfcal, electronic and electromechanical component parts. It provides extensive detailed technical informatbn for each component part such as: definitions, oonstructbn details, operating characteristics, derating, failure mechanisms, screening techniques, standard parts, environmental considerations, and circuit appliition. Nonelectronic Parts Reliability Data 1991 , NPRD-91. TM report contains field ?aiture rate data on a variety of ektrical, mechanical, electromechanical and microwave parts and assernblii (1 400 different part types). It is available from the Re@bMty AnaJysis Center, PO Box 4700, Rome, NY 13440-6200, Phone: (315) 337-0900.
36.
Custodians: Amy-CR Navy - EC Air Fome -17
Preparing Activity: Air Force -17 Project No. RELI-0064
c-3
. .. . ----
MIL-HDBK-217F
APPENDIX
C:
BIBLIOGRAPHY
Review AcWtWs: Army - Ml, AV, ER Navy - Sl+, AS, OS ~rForce -11, 13, 14, 15, 18, 19,99 User Activities: Army - AT, ME, GL Navy - CG, MC, YD, TD Alr Force -85
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Camnoms sdlmbdanmsbfmtinat
doaunsm, brupostwdvus, ddatkm, udwikatkmofspedk=bn~sm nor Oons$mwrhplyuthofizdcm mwdvearly o podtJnd thodsr9ncdcka8na w8)wb
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DEPARTMENT OF THE AIR ~E RUERSS GrWfiss AFB, NY 13441-5700
OFFKXAL BUSINESS FOR t331ALTY PRtVATE USE S300
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POSTAGE
NECESSARY IF MAILED IN THE UNITED STATES
FRSTCtASS
Rome laboratory AlTN: RIJERSS Griffiss AFB, NY 13441-5700
...
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STANDARDIZATION 1.
DOCUMENT IMPFtOVEhtENT (set?hstructbn - I?eveme Ski@ ability PnWidon .
PROPOSAL
of Electronic E@pment m m)
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REMARKS
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NOTICE

NOTICE 2 28 February 1995

MILITARY HANDBOOK RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT

To all holders of MIL-HDBK-217F 1.

The following pagesofMIL-HDBK-217F New Page($) Front Cover ...

1-2 2-1 2-2 2-3 2-4 2-5 2-6

New Page ~ 21 2-2 2-3 . 2-4 2-5 2-6

2-8 53 54 5-5 5-6 5-9 5-1o 5-23 5-24

6-2 7-3 7-4 9-1 through 9-3 10-1 through 10-6

6-2 7-3 7-4

9-1 through 9-29 10-1 through 10-32

11-2 11-3 11-4, 11-5

Page(s) 10 JUIY 1992 I 2 December 2 December 2 December 2 December - ?ecember z Uecember

15-1 through 15-3 16-1 r 16-2 I #

Army - AT, ME, GL Navy - CG, MC, YD, TD

AMSC NIA DISTRIBUTION

for publlc release; dlstnbutlon

I NOT MEASUREMENT SENSITIVE]

MIL-HDBK-217F 2 DECEMBER 1991

DEPARTMENT OF DEFENSE WASHINGTONDC 20301

1, This standardization with the assistance 2.

handbook was developed of the military departments,

by the Department of Defense federal agencies, and industry. on reliability periodically to

Every effort has been prediction procedures. ensure its completeness

II ,.. .-. .- .. -..., -.-- ___ __

1-1 1-1 1-1 2-1

Part Stress Analysis Prediction ................................................................................ 4:

3-1 3-1 3-2 3-2

. ..... .......................... ................. ..

Gate/Logic Arrays and Microprocessors

XE, ~ and ZQ Tables for All ............. ................................................*.**................0.

(All Except Hybrids) ......................*.*... ............................ ...*.....*,.

(For Hybrids) ...................................................................... .*.......

Transistors, High Frequency, Si FET .......................... Thyristors and SCRS .....................**.........................

Optoelectronics, Optoelectronics, TJ Determination

Emitters ... .... ........ .............

Optoelectronics, Alphanumeric Displays .........0..................

7-3 7-4 8-1 8-2 8-3 8-4 8-5

11-1 11-3 11-4

sECTlc )N 14.1 14.2 SECTI( )N 15.1

23-1 A-1 B-1 c-1

LIST Figure 5-1: Figure 8-1:

FIGURES 5-18 8-1

upon a recently completed

new models to address

coils, motors, relays, and without surface

switches, circuit breakers, mount technology) and

technology solder connections.

Notice 2.0 MIL-HDBK-217F, errors in the basic F Revision.

Monolithic Monolithic Monolithic (including Monolithic Monolithic Monolithic Hybrid

Digital and Linear Gate/Logic Gate/Logic

Array Devices Array Devices

MOS Digital and Linear Bipolar and MOS Digital

Controllers) Bipolar and MOS Memory Devices GaAs Digital Devices

Microcircuits Bubble Acoustic

Memories Wave Devices

page VII of Revision

II ,.. .-. .- .. -..., -.-- _

(All Except Hybrids) .......................... ............................ ........,.

2-7 _-e_-. --==a===.a . ---- .. -- .-A. ...._. ___ _- ..