The chalange of spin in electronics

Spin electronics
Coriolan TIUSAN CNRS-UHP Nancy, France TUCN, Romania

S
Origin of spin dependent transport
Electron = charge + spin spin

e Charge

electronics

magnetism

Electrons in atoms

Atomic magnetic moment

L = li
i

S = si
i

J = L+S

Origin of spin dependent transport

Magnetic material => Band structure

Non magnetic Cu Magnetic Fe
n4s n 4s band n3d n 3d 3d band n3d EF 3d band n 3d EF
4s

Origin of spin dependent transport

n 4s band

4s

n4s

n(EF)= n (EF)

n(EF) n (EF)

Most of transport properties are determined by DOS at Fermi energy Spin-dependent density of state at Fermi energy Different spin population : polarized current

m*(d) >> m*(s)

J mostly carried by s electrons in transition metals Ni or Co

Origin of spin dependent transport

Scattering of electrons determined by DOS at EF : Fermi Golden rule :

Pi f i W f

n(EF )

Spin-dependent scattering rates e e e

= + =

Example:Co =10nm Co=2nm

Spin-dependent carrier densities and scattering rates both contribute to spin dependent transport in magnetic multilayers

Spin electronics
What is an electron ? particle with negative electric charge q=-e and spin 1/2 (magnetic moment m=B )

Electron as seen by an electronician:

Electron as seen by a magnetician:

Spin electronics

electronics = manipulation of electrons by using their charge for storage and processing of information the spin is (almost) completely neglected

Magnetism: develop materials in which the electron spins tend to align parallel to each (magnets) the charge of the electron plays a secondary (no) role

Purpose of spin-electronics: ``Teaching electrons new tricks combine electronics and magnetism in order to make new devices in which both the charge and the spin of the electron play an active role new fundamental physical questions, new phenomena new devices and applications

Take advantage of the electron spin as a new degree of freedom to generate new functionalities and devices
Magnetic materials can be used as polarizer and analyzer of electrons (spin filters)

Spin electronics

Optics
N N

N >> N Spin filters

e e e e e e

> <

1975: Prior to the discovery of giant magnetoresistance, the main magnetoresistive effect known in magnetic transition metals (Fe, Ni, Co and many of their alloys) at room temperature was the Anisotropic magnetoresistance (AMR).
Mc Guire, IEEE Trans.Magn.,MAG-11, 4 (1975) 1018

Spin electronics: AMR

consequence of an anisotropic mixing of spin-up and spin-down conduction bands induced by the spin-orbit interaction
Campbell et al, Phys.Rev.Lett.24, (1970) 269

AMR= dependence of the electrical resistivity on the relative angle between the direction of the sense current and the local magnetization.

M j
R=R+RAMRcos2()
Resistivity lower than ||

/= 3 to 5% in bulk NiFe or NiCo alloys at RT AMR decrease with reduction of the film thickness

AMR sensor circuit

Spin electronics: AMR

Wheatstone bridge configuration is used to ensure high sensitivity and good repeatability Disadvantage of AMR sensor: can only sense the magnitude, but not the direction; non-linear output.
AMR thin films were used in magnetoresistive heads from 1992 to 1998 The introduction of AMR films in magnetic recording technology in 1992 major breakthrough which led to a doubling in the rate of increase of storage areal density per year (from 30%/year to 60%/year).

The birth of spin electronics: 1988 discovery of Giant Magnetoresistance

A.Fert et al (Orsay), P. Grunberg (Julich) 2007 Nobel prize for Physics

Spin electronics: GMR

Baibich et al. Phys. Rev. Lett. 61 (1988) 2472 G. Binash et al., Phys. Rev. B, 39, 4828 (1989)

GMR: Giant Magnetoresistance Experimental measurement geometry

Spin electronics: GMR

GMR=(RAP-RP)/RP

Mechanisms of GMR Two current model of a ferromagnet

If spin flip scattering is negligible Two conduction channels in parallel (Mott - 1930) Characteristic lengths n n =>

Spin electronics: GMR

Electronic transport: two type of carriers : e et e

Spin asymmetry coefficient

=

= + = +

Mechanisms of GMR: Resistor model

Validity:
CIP: mean-free paths of the electrons >> thickness of the various layers CPP: thickness << spin diffusion (flip) length

P Configuration

AP Configuration

Spin electronics: GMR

M NM M

M NM M

R+= r r r R R R- = R

R+ = (r+R)/2 r R R r

R- = (R+r)/2

RP =

Rr R+r r < RAP = R+r 4

key role of spin scattering asymmetry in the origin of the GMR

Key role of spin scattering asymmetry in the origin of the GMR

Spin electronics: GMR

From antiferromagnetically coupled multilayers to spin-valves

M2 Spin electronics: GMR

Rp + Rap Rp Rap + cos(), 2 2 = ( M1, M 2 ) R=

Spin valve effect

M1
(2)

Multilayers with double coercivity

R high (2)

R
(4)

(4)

Hard-soft architecture
(3)

(1) (3) R low (1)

control independently the two magnetizations

From antiferromagnetically coupled multilayers to spin-valves

Spin electronics: GMR

A significant step towards applications of GMR in devices was achieved by Parkin et al: GMR in sputtered multilayers.
Phys.Rev.Lett.,64 (1990) 2304.

Spin-valves were discovered in 1990.

Dieny et al: Journ.Appl.Phys.69, (1991) 4774-9 J. Magn. Magn. Mat. 93 (1991),101-4. Phys. Rev.B. 43 (1991), 1297-300.

R/R<20%

Spin electronics: GMR

GMR structures

Spin electronics: GMR

Application of GMR devices: read-heads

Spin electronics: GMR

Inductive heads

GMR head

Application of GMR devices: read-heads

Spin electronics: GMR

Disk drive

Suspended MR head

Application of GMR devices: read-heads

Spin electronics: GMR

sens positif

Application of GMR devices: read-heads

Spin electronics: GMR

Grain structure and magnetic transition

Application of GMR devices: read-heads

Spin electronics: GMR

Application of GMR devices: read-heads

Spin electronics: GMR

Spin electronics: GMR

Impact of GMR read-heads in storage areal density increase

Spin electronics: GMR

SPINTRONICS

Impact of GMR read-heads in storage areal density increase

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

However! Superparamagnetic Limit: thermal stability of magnetic media

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Spin electronics: GMR

Other application of spin-valves

Spin electronics: GMR

Spin-valves can be viewed as sensitive magnetic field sensors Applications : measurements of electrical current position or rotation encoders magnetoresistive compass magnetoresistive heads for video-tapes or other storage media of lower density than hard disk drives.

Application of spin-valves: GMR angular sensor

Spin electronics: GMR

Hrot FM2
M1 M2

Rp + Rap Rp Rap R= + cos(), 2 2 = ( M1, M 2 )

R
Rap

FM1

Rp 0

GMR circuit technique

Spin electronics: GMR

Due to their outstanding sensitivity, Wheatstone Bridge Circuits are very advantageous for the measurement of resistance, inductance, and capacitance.

GMR resistors can be configured as a Wheatstone bridge sensor. Two of which are active. Resistor is 2 m wide, which makes the resistors sensitive only to the field along their long dimension.

Application of spin-valves: GMR angular sensor

GMR angle detector: (spin valve) H.A.M. van den Berg et al JMMM 165, 524, (1997)

Spin electronics: GMR

Siemens Aktiengesellschaft

Spin electronics: TMR

TMR
Magnetic tunnel junctions Physics of spin polarized tunneling Applications: sensors, MRAMS, logic gates Multiple barrier systems: spin electronic nonlinear devices Coulomb blockade, SET

Magnetic tunnel junction

Spin electronics: TMR

R (RAP RP ) 2 P1 P2 = = R RP 1 P1 P2 with P1 ( 2 ) =
n1 ( 2 ) n1 ( 2 ) n 1 ( 2 ) + n1 ( 2 )

Jullire, Phys. Lett. A54, 225, (1975).

First observations of large TMR amplitudes at 300K : Moodera et al, PRL (1995); Myazaki et al, JMMM(1995). Alumina based tunnel junctions. R/R~40-80%

Mechanisms of TMR

Spin transport by quantum tunneling

Spin electronics: TMR

EF

1 2
eV Two current model Spin conservation during tunneling spin up: I spin down: I Itot =I +I

Quantum Mechanics

4 e J = T na nb ( f a f b ) dE kt T = OK J n a ( E F ) nb ( E F + eV )

Mechanisms of TMR

FM1

FM2
Parallel configuration

Spin electronics: TMR

EF

nFM1

n FM1

nFM2

n FM2

RP-1 ~ IP ~ nFM1(EF) n FM2(EF) + n FM1(EF) n FM2(EF) ~ nFM1(EF) n FM2(EF)

Mechanisms of TMR

FM1

FM2
Antiparralel configuration

Spin electronics: TMR

EF

nFM1

n FM1

nFM2

n FM2

RAP-1 ~ IAP ~ nFM1(EF) n FM2(EF) + n FM1(EF) n FM2(EF) ~ 0

R RAP

Tunnel magnetoresistance:

R R AP R P = TMR = R RP

Spin electronics: TMR

Rp
R (RAP RP ) 2 P1 P2 = = R RP 1 P1 P2
H rot

R=f (cos())
with

M 2 FM2 I M1 FM1

P1 ( 2 ) =

n 1 ( 2 ) n1 ( 2 ) n1 ( 2 ) + n1 ( 2 )

Spin-valve effect

Slonczewski:Phys. Rev. B39, 6995, (1989)

Rp + Rap Rp Rap + cos(), 2 2 = ( M1, M 2 ) R=

Key parameters for MTJ

FM2 Isolant

Spin electronics: TMR

e-

FM1

Hc1 Hc2

R=f()=R(H)
U EF

T exp d

1
eV

R anti parallel

R parallel
Control of barrier structure at nanometer scale

Control of magnetic properties of electrodes

(I) Control of magnetic properties

M (2) (1)

Spin electronics: TMR

Hc2 Hc1
M1+ M2

M1+M2

(3)

? Operating at low fields: HC1<H<HC2

M1 M2

R R high (2)

R low

(3)

(1) H

Hc2

Hc1

Operating an MTJ: M(H ) <=> R(H)

|H|<HC2

(I) Control of magnetic properties

M (1)

Minor loop:

Spin electronics: TMR

(2)

Hc2

Hc1

M1+M2

Layer M2 blocked Layer M1 mobile

M1+ M2

R (2) R high

R low Hc2 Hc1

(1) H

JTM: M(H )<=> R(H)

(II) Control of barrier structure

Texp d
Control of d

)
Control of Tunnel cartography

Spin electronics: TMR

Image AFM
0.7 nm

Image TEM

D'

A A'
0 nm 0.5 nm

C' D
50nm
100 nA

50nm
AA'

50nm

CC
0 nm

DD'

0.1 nA

homogenuous Optimisation of buffer layer ==> small roughness

C. Tiusan et al, JAP 85, 5276 (1999)

inhomogne

Homogeneity of tunnel current

V.DaCosta, C. Tiusan, T. Dimopoulos, K. Ounadjela, PRL 85, 876 (2000)

courant

(II) Control of barrier structure

AAF/Al2O3(1.5nm)/CoFe/Fe MTJ AAF=Co/Ru/Co

Spin electronics: TMR

Epitaxial Fe/MgO/Fe MTJ

Spin electronics: TMR

Large TMR effect (I)

Spin electronics: TMR

Fe
400 300 200 100 0 -1.0 -0.5 0.0 0.5 1.0

4K 300K

MgO

TMR (%)

2nm Fe

Field (kOe)

TMR = (RAP-RP)/RP TMR = 200 % @ 300K

Patterning the MTJ: lithography ion etching

C MT B MB Bf

Spin electronics: TMR

S = substrate Bf = buffer layer MB = bottom magnetic layer B = barrier MT = top magnetic layer C = capping layer

Step no.1 Etching to define the bottom electrode

Patterning the MTJ: lithography ion etching Step no.2 Etching to define the junction

Spin electronics: TMR

- SiO2 sputtering (junction insulation)

Patterning the MTJ: lithography ion etching Step no.3 The RIE through SiO2 down to the bottom contacts

Spin electronics: TMR

Step no. 4 Sputtering of the Nb-Al contacts

Final single MTJ device

Spin electronics: TMR

I+
top electrodes
2020 m2 J

V+ I-

V100 m

bottom electrodes

SIEMENS

Properties of tunnel transport Nonlinear IV characteristics

Possibility to adjust the resistance via the barrier height thickness
Courant [A]
6 3 0 -3 -6 -0,30 -0,15 0,00 0,15 0,30

Spin electronics: TMR

Tension [V]

Brinkman et al, JAP 41, 1915 (1970)

R=

d K1 exp d K 2 S

Small voltage
70.8 10 24 S [ m 2 ] d [ m]

Capacity
K C= 3S d
C [F ] =

Small voltage

RC

RC = cte exp d K 2

Daughton et al, JAP 81, 3758 (1997)

+ magnetic control

Applications of MTJ
Sensors

Spin electronics: TMR

Magnetic field, position, etc: similar to GMR. Tunnel junctions would then offer a superior signal to noise ratio than metal based CIP or CPP sensors. Data storage unit in magnetic random access memories (MRAM)
Tehrani et al, IEEE.Trans.Magn., 35, 2814, (1999).

basic element of reprogrammable logic gates

Johnson IEEE Spectrum 33, (2000).

magnetoresistive sensor for CPP read-heads

Nakashio J.Appl.Phys.89, 7356 (2001).

The requirements of the properties, especially the product of resistance and area (R.A) are different for these various applications.

Spin electronics: TMR

Magnetic random access memories (MRAM)

Single element Matricial architecture

Spin electronics: TMR

RP<RAP

Magnetic random access memories (MRAM)

Spin electronics: TMR

Electric characteristics High resistance low power consumption Large R high signal/noise Perpendicular transport, low mean free path high integration potential Exponential variation of current with voltage, barrier thickness
High density of DRAM

Magnetic characteristics non volatile

High speed of SRAM

Other characteristics no mechanic pieces stable against radiations

Radiation Hard

TMR MRAM Promises

Low cost memory

Non destructive read- out

Spin electronics: TMR-MRAM TMR

Performances of MRAM

The first MRAM production in 2006

Spin electronics: TMR

Magnetic tunnel junction: micromagnetic probe

One layer of the MTJ is in a mono-domain state => Spin analyzer The other layer in a multi-domain state: Spin polarizer

Spin electronics: TMR

Analyzer

Domain structure f(H)

Polarizer

RD

RP

R(Hi)

R(H)
Field dependence of the domain structure analysis
C. Tiusan et al, JAP (2001)

From 2D to 3D memories

Towards Resonant Tunneling Devices: Quantum well structures

In semiconductor systems

Resonant diodes

Towards Resonant Tunneling Devices: Quantum well structures

Resonant diodes

Towards Resonant Tunneling Devices: Quantum well structures

Resonant diodes

Resonant diodes

Scheme of a vertical resonant tunneling transistor (left) and the corresponding layer structure (right).

Schematic view of the device (scanning electron micrograph of the completely processed device with different mesa sizes).

Towards Resonant Tunneling Devices: Quantum well structures Quantum coherent transport effects in multiple MTJ structures Double MTJ

Spin electronics: TMR

C. Tiusan et al, APL 79, 4231, (2001).

+ TMR effect => Spin diode

Spin transistor

or

M1

M2

M3

Spin electronics: TMR

VEB

B
MTJ1 MTJ2

VBC

IE

IC
E

C
C insulator MTJ2 MTJ1

electrode B E

IB
VEB VBC

Ic double controlled: bias voltage of EB and BC junctions applied magnetic field (tunnel transmission of spin polarized electrons across the two Magnetic Tunnel Junction)

Coulomb Blockade => Single Electron Transistor

- small grain of a ferromagnetic material is inserted in the insulating barrier, When an electron tunnels into the grain, the electrostatic energy increases by e2/2C, where C is the capacitance of the grain, and, therefore, tunnelling is blocked unless the barrier presented by the charging energy is overcome by bias voltage or thermal energy.

Spin electronics: TMR

=> Characteristic Coulomb staircases in the currentvoltage characteristics of the junction.

N= number of conducting electrons

Single Electron Transistor (SET)

Tunnel junctions

Spin electronics: TMR

Bell Lab researchers fabricated the first SET in 1987 Similar tunneling concept as RTDs
- One electron tunnels from source to drain, through the barriers

Spin electronics: SVT

Spin electronics: SRT

Semiconductor spintronics

Combinig ferromagnetism And semiconductors

Semiconductor Spintronics: spin LED

Spin electronics: SRT

Spin NANO Electronics

Towards the Spin NANO Electronics

Spin injection in nano-objets

Magnetic Injector

Spin NANO Electronics

Analyzed Nano-object Magnetic Analyzer

Manipulation of particles by AFM in a nano-gap

Nanotechnology

Coulomb blockade Spin polarized tunneling single electron transistor

Carbon Nanotubes

Graphite

Nanotechnology

Electrical Properties of CNT

Nanotechnology

Carbon nanotubes can be metallic or semiconductor depending on their chirality.

C = n a1 + m a2
Chiral Vector C is defined as the vector from one open end of the tube to the other after it is rolled. If (n-m) is divisible by 3, the tube is metallic If (n-m) is not divisible by 3, the tube is semiconducting.

Carbon Nanotubes

Nanotechnology

Two channel G =2G0 where G0 =2e2/h

ballistic transport over 1,4 m, ordinary temperature

Carbon Nanotube FET

Nanotechology / NANO spin electronics

IBM
CNT can be used as the conducting channel of a MOSFET. These new devices are very similar to the CMOS FETs. All CNFETs are pFETs by nature. nFETs can be made through Annealing Doping Very low current and power consumption Although tubes are 3nm thick CNFETs are still the size of the contacts, about 20nm.

Molecular electronics Molecular resonant diode

Nanotechnology

M.A. Reed et al., IEEE Proc. 87 (1999) 652

Molecular electronics Electrical conductivity of ADN

DNA wire between 2 contacts.

Nanotechnology

The measured resistivity is 1.5 10-7 ohm.m.

Convergence of sciences

Nanotechnology