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Mosfet DFP2N60
Mosfet DFP2N60
DFP2N60 DFF2N60 2
1 1 2 1
: 600[V]
3 3
Features
RDS(on) (Max 5.5 ) Gate Charge (Typical 15nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested Rohs Compliable Halogen Free available
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductors advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 & TO220 full packages are well suited for charger SMPS and small power inverter application.
Parameter
Value DFP2N60
600 2.4 1.5 9.6 30 140 2.8 4.5 64 0.5 - 55 ~ +150 300 28 0.21 2.4* 1.5* 9.6*
DFF2N60
Units
V A A A V mJ mJ V/ns W W/C C C
Thermal Characteristics
Symbol
RJC RJA
Sept, 2009. Rev. 4.
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
DFF2N60
4.5 62.5
Units
C/W C/W
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
1/11
DFP2N60/DFF2N60
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS =600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID =1.2A 600 0.38 1 10 100 -100 V V/C uA uA nA nA ( TC = 25 C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 4.5 4.0 5.5 V
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 570 150 310 720 215 450 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =2.4A see fig. 12.
(Note 4, 5)
15 75 30 35 15 1.6 6
40 160 60 80 20 nC ns
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =2.4A, VGS =0V IS=2.4A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
600 1.1
Max.
2.4* 9.6* 1.5 -
Unit.
A V ns uC
NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L =44.7mH, IAS =2.4A, VDD = 50V, RG = 50 , Starting TJ = 25C 3. ISD 2.4A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature.
2/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
Fig 1. On-State Characteristics
10
1
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
150 C 25 C -55 C
Notes : 1. VDS = 50V 2. 250 s Pulse Test
o o
10
-1
10
-2
10
-1
10
10
10
-1
10
VGS = 10V
6
10
150
10
0
25
VGS = 20V
2
Note : TJ = 25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VDS = 120V
10
Capacitance [pF]
500
Ciss
250
Coss Crss
0 5 10 15 20 25 30 35 40
Note : ID = 2.4 A
12
16
3/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.2 3.0
2.5
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 1.2 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
100 s 1 ms 10 ms 100 ms DC
10
10
10
-1
10
-1
10
-2
10
-1
10
10
10
10
10
-2
10
10
10
10
2.0
1.2
1.5
1.0
0.5
0.0 25
50
75
100
o
125
150
0.0 25
50
75
100
o
125
150
4/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
Fig 13. Transient Thermal Response Curve(TO220)
10
(t)
10
-1
0 .0 2 0.01
t1
JC
Z?
sing le p ulse
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
D =0 .5
10
0 .2 0 .1 0.0 5
*. N ote s : O 1. Z ? JC (t) = 4.5 C /W M ax. 2. D uty F a cto r, D = t 1 /t 2 3. T JM - T C = P D M * Z ?
JC
10
-1
0 .02 0 .01
(t)
JC
10
-2
sing le p ulse
t1 t2
Z?
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
5/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
Fig. 12. Gate Charge Test Circuit & Waveforms
12V
200nF
50KO 300nF
VGS Qg VDS
VGS
DUT
1mA
Qgs
Qgd
Charge
VDS
RL VDD
(0.5 rated VDS)
VDS
90%
DUT
Vin
L VDS ID RG VDD
6/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
IS
Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
IS ( DUT ) IRM
di/dt
VDS ( DUT )
Vf
VDD
7/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
TO-220 Package Dimension
pi
E A1 Q
H1
L1
b2 L b C e, typ. A2
Symbol A A1 A2 b b2 c D e E H1 L L1 pi Q
MIN. 0.14 0.02 0.08 0.015 0.045 0.014 0.56 0.096 0.38 0.23 0.5 0.139 0.1
INCHES TYP. 0.165 0.038 0.098 0.028 0.058 0.019 0.605 0.1 0.4 0.25 0.54 0.15 0.118
MAX. 0.19 0.055 0.115 0.04 0.07 0.024 0.65 0.104 0.42 0.27 0.58 0.25 0.161 0.135
MIN. 3.56 0.51 2.03 0.38 1.14 0.36 14.22 2.44 9.65 5.84 12.7 3.53 2.54
MILLIMETERS TYP. 4.195 0.955 2.475 0.7 1.46 0.485 15.365 2.54 10.16 6.35 13.715 3.81 2.985
MAX. 4.83 1.4 2.92 1.02 1.78 0.61 16.51 2.64 10.67 6.86 17.73 6.35 4.09 3.43
8/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
DFP2N60/DFF2N60
TO-220F Package Dimension
Sym bol A B C D E F G H I J K L M N
MIN 9.88 15.30 2.95 10.30 0.95 1.81 0.50 3.00 4.35 6.20 0.41 2.30 2.53 2.34
IN C H ES TYP 10.08 15.50 3.00 10.50 1.08 1.84 0.70 3.20 4.45 6.40 0.51 2.50 2.73 2.54
MAX 10.28 15.70 3.05 10.70 1.20 1.87 0.90 3.40 4.55 6.60 0.61 2.70 2.93 2.74
25.10 38.86 7.49 26.16 2.41 4.60 1.27 7.62 11.05 15.75 1.03 5.84 6.43 5.94
MILLIMETER S MIN 25.60 39.37 7.62 26.67 2.74 4.67 1.78 8.13 11.30 16.26 1.28 6.35 6.93 6.45
TYP 26.11 39.88 7.75 27.18 3.05 4.75 2.29 8.64 11.56 16.76 1.54 6.86 7.44 6.96
9/11
2) YY : Annual code, Last two digits of Annual number. Ex) date code of product produced in 32nd week in 2010 : 3210
Device Code
D F P
:Bosung D&Is D :MOSFET ( E for E-fet series) :Package code(note 4)
<Note> 1. Assembly site code is an alphabetic code and fixed according to assembly site. 2. Confidential code is to protect D&Is product from imitation product and to control production. 3. Haloen free code is one of N or F. N is a code for Non-halogen free product and F is for halogen Free product. 4. Package codes to package types are P for TO220, F for TO220F, U for TO251, D for TO252, B for TO263, R for TO126, W for TO247/TO3P, K for SOT89, N for TO92, L for TO264. 5. This new marking layout for halogen free product has been applied to product which has been produced since 2009 .
How to contact us Headquarters : Address : 201-1410, Chunui-Techono park II, Chunui-dong, Wonmi-gu, Bucheon-si, Korea. P.C. 420-857. TEL. +82-32-623-0145, FAX. +82-32-623-0148. Website : http://www.dnisemi.com.
Contact person :
Juliet Kim, Sales assistant, hhkim@dnisemi.com / Shon Go, Technical support, shgo@dnisemi.com.
10/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
D F F
Date Code
1) XX : weekly code
Company Symbol
2) YY : Annual code, Last two digits of Annual number. Ex) date code of product produced in 32nd week in 2010 : 3210
<Note> 1. Assembly site code is an alphabetic code and fixed according to assembly site. 2. Confidential code is to protect D&Is product from imitation product and to control production. 3. Haloen free code is one of N or F. N is a code for Non-halogen free product and F is for halogen Free product. 4. Package codes to package types are P for TO220, F for TO220F, U for TO251, D for TO252, B for TO263, R for TO126, W for TO247/TO3P, K for SOT89, N for TO92, L for TO264. 5. This new marking layout for halogen free product has been applied to product which has been produced since 2009 .
How to contact us Headquarters : Address : 201-1410, Chunui-Techono park II, Chunui-dong, Wonmi-gu, Bucheon-si, Korea. P.C. 420-857. TEL. +82-32-623-0145, FAX. +82-32-623-0148. Website : http://www.dnisemi.com.
Contact person :
Juliet Kim, Sales assistant, hhkim@dnisemi.com / Shon Go, Technical support, shgo@dnisemi.com.
11/11
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.