Scribd Logo
Upload

Welcome to Scribd!

  • 933 views

    Tutorial 4

    Uploaded by

    Tushar Gupta
    This document contains 10 questions about semiconductor physics concepts including: 1) Calculating the resistivities of intrinsic Si and GaAs. 2) Determining electron mobility at different temperatures based on lattice scattering. 3) Finding mobility when two scattering mechanisms are present. 4) Finding properties of silicon samples with different impurity concentrations. 5) Relating resistivity and mobility ratio for a semiconductor. 6) Measuring resistivity using a four-point probe. 7) Analyzing Hall measurement data to determine sample properties. 8) Relating sample resistances with different doping levels. 9) Evaluating built-in field for non-uniform doping. 10) Calculating

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content

    You might also like

    Tutorial 4

    Uploaded by

    Tushar Gupta
    933 views1 page
    This document contains 10 questions about semiconductor physics concepts including: 1) Calculating the resistivities of intrinsic Si and GaAs. 2) Determining electron mobility at different temperatures based on lattice scattering. 3) Finding mobility when two scattering mechanisms are present. 4) Finding properties of silicon samples with different impurity concentrations. 5) Relating resistivity and mobility ratio for a semiconductor. 6) Measuring resistivity using a four-point probe. 7) Analyzing Hall measurement data to determine sample properties. 8) Relating sample resistances with different doping levels. 9) Evaluating built-in field for non-uniform doping. 10) Calculating

    Original Description:

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This document contains 10 questions about semiconductor physics concepts including: 1) Calculating the resistivities of intrinsic Si and GaAs. 2) Determining electron mobility at different temperatures based on lattice scattering. 3) Finding mobility when two scattering mechanisms are present. 4) Finding properties of silicon samples with different impurity concentrations. 5) Relating resistivity and mobility ratio for a semiconductor. 6) Measuring resistivity using a four-point probe. 7) Analyzing Hall measurement data to determine sample properties. 8) Relating sample resistances with different doping levels. 9) Evaluating built-in field for non-uniform doping. 10) Calculating

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    933 views1 page

    Tutorial 4

    Uploaded by

    Tushar Gupta
    This document contains 10 questions about semiconductor physics concepts including: 1) Calculating the resistivities of intrinsic Si and GaAs. 2) Determining electron mobility at different temperatures based on lattice scattering. 3) Finding mobility when two scattering mechanisms are present. 4) Finding properties of silicon samples with different impurity concentrations. 5) Relating resistivity and mobility ratio for a semiconductor. 6) Measuring resistivity using a four-point probe. 7) Analyzing Hall measurement data to determine sample properties. 8) Relating sample resistances with different doping levels. 9) Evaluating built-in field for non-uniform doping. 10) Calculating

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 1

    TUTORIAL:4 Q:1FindtheresistivitiesofintrinsicSiandintrinsicGaAsat300K. Q : 2 Assume that the mobility of electrons in silicon at T = 300 K is n= 1300 cm2/Vs.

    Also
    assumethatthemobilityismainlylimitedbylatticescattering.Determinetheelectronmobilityat (a)T=200Kand(b)T=400K.

    Q:3Twoscatteringmechanismsexistinasemiconductor.Ifonlythefirstmechanismispresent,
    themobilitywillbe250cm2/Vs.Ifonlythesecondmechanismispresent,themobilitywillbe500 cm2/Vs.Determinethemobilitywhenbothscatteringmechanismsexistatthesametime.

    Q:4Findtheelectronandholeconcentrations,mobilitiesandresistivitiesossiliconsamplesat
    300K,foreachofthefollowingimpurityconcentrations:(a)51015boronatoms/cm3;(b)21016 boronatoms/cm3and1.51016arsenicatoms/cm3;and(c)51015boronatoms/cm3,1017arsenic atoms/cm3,and1017galliumatoms/cm3.

    Q:5Forasemiconductorwithaconstantmobilityratiobn/p>1independentofimpurity
    concentration, Find the maximum resistivity m in terms of the intrinsic resistivity i and the mobilityratio.

    Q:6Afourpointprobe(withprobespacingof0.5mm)isusedtomeasuretheresistivityofap
    typesiliconsample.Findtheresistivityofthesampleifitsdiameteris200mmanditsthicknessis 50m.Thecontactcurrentis1mA,andthemeasuredvoltagebetweentheinnertwoprobesis 10mV.

    Q : 7 given a silicon sample of unknown doping, Hall measurement provides the following
    information:W=0.05cm,A=1.6103cm2,I=2.5mA,andthemagnitudefieldis30nT(1T=104 Wb/ cm2 ). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majoritycarrierconcentration,resistivity,andmobilityofthesemiconductorsample.

    Q : 8 A semiconductor is doped with ND ( ND >> ni ) and has aresistance R1. The same
    semiconductor is then doped with an unknown amount of acceptors NA ( NA >>ND ), yielding a resistanceof0.5R1.FindNAintermsofNDifDn/Dp=50.

    Q:9AnintrinsicSisampleisdopedwithdonorsfromonesidesuchthatND=N0 exp(ax).(a)
    Findanexpressionforthebuiltinfield(x)atequilibriumovertherangeforwhichND>>ni.(b) Evaluate(x)whena=1m1.

    Q : 10 An ntype Si slice of a thickness L is inhomogeneously doped with phosphorus donor


    whoseconcentrationprofileisgivenbyND(x)=N0 +(NL N0)(x/L).Whatistheformulaforthe electric potential difference between the front and the back surfaces when the sample is at thermalandelectricequilibriaregardlessofhowthemobilityanddiffusivityvarieswithposition? What is the formula for the equilibrium electric field at a plane x from the front surface for a constantdiffusivityandmobility?

    You might also like