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STPS2L25U: Low Drop Power Schottky Rectifier
STPS2L25U: Low Drop Power Schottky Rectifier
FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS SMB JEDEC DO-214AA
DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB (JEDEC DO214-AA), this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt * : RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 125C = 0.5 tp = 10 ms Sinusoidal tp=2 s square F=1kHz tp = 100 s square Parameter Repetitive peak reverse voltage Value 25 10 2 75 1 1 - 65 to + 150 150 10000 Unit V A A A A A C C V/s
dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(ja) dTj
1/4
STPS2L25U
THERMAL RESISTANCES Symbol Rth(j-l) Junction to lead Parameter Value 25 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 380 s, < 2%
Min.
Typ. 15
Max. 90 30 0.45
Unit A mA V
VR = VRRM IF = 2 A IF = 4 A 0.43
To evaluate the maximum conduction losses use the following equation : P = 0.24 x IF(AV) + 0.068 IF2(RMS)
Rth(j-a)=100C/W
=tp/T
tp
25
2/4
STPS2L25U
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values).
IM(A) 10 9 8 7 6 5 4 3 2 IM 1 0 1E-3
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a) 1.0 0.8
Ta=25C
0.6
Ta=50C
= 0.5
0.4
Ta=100C
= 0.2
0.2
t
=0.5
tp(s) 1E+1
0.0 1E-2
=tp/T
tp
1E-1
1E+0
1E+2
5E+2
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA) 1E+2
Tj=150C
Tj=125C Tj=100C
100
Tj=25C
VR(V) 0 5 10 15 20 25
VR(V) 10 1 2 5 10 20 30
Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W)
IFM(A) 10.00
Typical values Tj=150C
120 100
1.00
Tj=125C
80
Tj=25C Tj=100C
60 40 20
0.10
VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
S(Cu) (cm) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3/4
STPS2L25U
PACKAGE MECHANICAL DATA SMB DIMENSIONS REF.
E1
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
A1 A2 b
c E
A1
E1
C L A2
D
b
2.3
1.52
2.75
1.52
Marking G23
Package SMB
Weight 0.107g
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