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Carrier Transport Phenomena: Department of Microelectronics and Computer Engineering
Carrier Transport Phenomena: Department of Microelectronics and Computer Engineering
03/10/08
We now study the effect of external fields (electric field, magnetic field) on semiconducting material
03/10/08
Objective
Discuss drift and diffusion current densities Explain why carriers reach an average drift velocity Discuss mechanism of lattice and impurity scattering Define mobility, conductivity and resistivity Discuss temperature and impurity dependence on mobility and velocity saturation State the Einstein relation Describe the Hall effect
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Drift current
Electric field force on electrons and holes
Free states in conduction and valence band
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Jp
J p,drf = e p vd A /cm 2
(Volume) density of holes
vd
Jn E
for electrons
J n,drf = -e n vd A /cm 2
vd
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vth + v
Even in the absence of E-field the holes have random thermal velocity
(vth) They collide with ionized impurity atoms and thermally vibrating lattice atoms. Let mean time between collisions. cp with E-field net drift of holes in the direction of the E-field net drift velocity is small perturbation on random thermal velocity. 03/10/08 7 so remains almost unchanged even in the presence of E-field. cp
Department of Microelectronics and Computer Engineering
Now,
v peak =
e cp mp *
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Drift velocity vd
v peak = e cp mp * E
v
vd
0
cp
2 cp
3 cp
Average drift velocity = Using more accurate model including the effect of statistical distribution,
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p (mobility)
Mobility: vd =
For holes:
For electrons:
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Mobility: = vd /E
n (cm2/V-s ) Silicon Gallium Arsenide Germanium 1350 8500 3900 mn*/m0 Silicon Gallium Arsenide Germanium 1.08 0.067 0.55
Unit: cm2/Vs
p (cm2/V-s ) 480 400 1900 mp*/m0 0.56 0.48 0.37
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Scattering:
Two main s cattering mechanis ms Lattice s cattering or phonon s cattering Impurity s cattering
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Phonon Scattering
Phonons are lattice vibrations (Atoms randomly vibrate about their position @ T>0K)
Lattice vibration causes a local volume change and hence lattice constant change.
L T
3 2
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(a) Electron and (b) Hole mobilities in Si vs. T at different doping concentrations. (Inserts show dependence for almost intrinsic Si)
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Scattering due to coulomb interaction between electrons/holes and ionized impurities. T increases thermal velocity vth increases, so less time spent for scattering I T n NI increases the scattering chance 1 increases I N I
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High doping is required to overcome short channel effects even though it reduces mobility.
: average time between two collisions with dopant atoms I : average time between two collisions with vibrating" lattice points L
dt : Number of collisions in time dt due to impurity scattering I
d t : Number of collisions in time dt due to lattice scattering L
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Low doping concentration or high T The lattice scattering dominates High doping concentration or low T The impurity scattering dominates
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n d rf
= enE
e c = * m
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Strained Si
Intel 90nm process Strain decreases the effective mass, increasing the mobility already been used for production
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Conductivity
=enn +epp
Units (-cm)-1
Units -cm
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1 = e n N d or e p N a
Impurity scattering
Lattice scattering
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At high temperature, intrinsic carrier concentration increases and dominates both n and At low temp, due to freeze-out both n and reduce
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Ohms Law:
Ohms law
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Velocity saturation vd = E
vth for Si
vth 107cm/s
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Negative resistance
Negative resistance region -ve resistance used in design of oscillators. Oscillation frequency depends on transit time in the device.
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Carrier Diffusion
Low concentration
High concentration
Concentration
D: diffusion coefficient
for electrons
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l=average mean free path l = (vth + vdr) cp If E=0, vdr=0 l=vth cp Electron concentration versus distance.
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n(l)(-vth) n(l)(vth)
n(-l)(-vth)
n(-l)(vth)
= sum of electron flow in +x direction at x=-l and electron flow in x direction at x=l
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Taylor expansion of
n(-l) en n(+l) at x = 0:
+ ...
n(+l) =
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For holes:
Note
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DRIFT
DIFFUSION
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Diffusion of electrons
Due to electric field potential difference across the device In the region at lower potential EF-EFi higher
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Donor concentration
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Recall
Taking log
Electric field
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n,p
Assuming n d N
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Substituting
dN d because 0 dx
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Similarly
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Due to magnetic field, both electrons and holes experience a force in y direction. In n-type material, there will be a build up of ve charge at y=0 and in p-type material, there will be a build up of +ve charge. The net charge induces a electric force in y-direction opposing the magnetic field force and in steady state they will exactly cancel each other.
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48
Hall Voltage:
Ey = vxBz
VH = EyW=vxWBz
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How to determine n-type or p-type & doping concentration? For p-type material: VH will be +ve
Jx vx = ep
Ix = (ep)(Wd )
VH will be -ve
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p ?
56
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Summary
Drift net movement of charge due to electric field. Drift current = J drf = e( n n p p+) E Mobility () lattice and impurity scattering Mobility due to lattice scattering L T T Mobility due to impurity scattering I Ohms law V =
L I A
3 2 3 2
NI
L =I A
RI
Summary
Some semiconductors mobility reduces at high E negative resistance used in design of oscillators. Diffusion current
J diff = eDn dn dx dp eDp dx
Hall effect can be used to determine semiconductor type, doping concentration and mobility
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