Core Technology Center

Development of EUV lithography tool technology at Nikon

Katsuhiko Murakami Lens Engineering Development Department, Production Technology Headquarters

July 12, 2011
NGL Workshop 2011 Katsuhiko Murakami

Outline
Lithography roadmap Performance of EUV1
Evaluation of flare Ultimate resolution Contamination control

Developments toward HVM EUV exposure tools

Optical design of projection optics On-body wavefront control

Summary

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

Outline
Lithography roadmap Performance of EUV1
Evaluation of flare Ultimate resolution Contamination control

Developments toward HVM EUV exposure tools

Optical design of projection optics On-body wavefront control

Summary

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

K1 factor of ArF immersion and EUV

DRAM ArFI 193 nm hp 1.30 1.35 1.40 1.44 0.25 0.32 EUVL 13.5 nm 0.35 0.40 0.45 0.50 32 0.21 0.22 0.23 0.24 0.59 0.75 0.82 0.94 28 0.19 0.20 0.21 0.21 0.52 0.67 0.73 0.84 0.94 25 0.170 0.175 0.183 0.188 0.47 0.60 0.65 0.75 0.84 0.94 22 0.152 0.157 0.163 0.168 0.42 0.53 0.58 0.67 0.75 0.83 20 0.135 0.140 0.145 0.150 0.37 0.48 0.52 0.59 0.67 0.74 18 0.120 0.125 0.130 0.133 0.33 0.42 0.46 0.53 0.60 0.66 16 0.107 0.111 0.115 0.119 0.29 0.38 0.41 0.47 0.53 0.59 14 0.095 0.099 0.103 0.106 0.26 0.34 0.37 0.42 0.47 0.52 13 0.085 0.088 0.092 0.094 0.23 0.30 0.33 0.37 0.42 0.47 0.082 0.084 0.21 0.27 0.29 0.33 0.38 0.42 0.19 0.24 0.26 0.30 0.33 0.37 0.17 0.21 0.23 0.26 0.30 0.33 0.15 0.19 0.21 0.24 0.27 0.29 11 10 9 8

NA

32nm hp 22nm hp

22nm hp 16nm hp

16nm hp 11nm hp

11nm hp 8nm hp

Our target
ArF immersion will cover 22nm-hp node with double patterning. EUV with NA0.32 - 0.35 can cover 16nm-hp node. Single generation? EUV with NA>0.4 can cover 11nm-hp node. Multiple generation
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 4

Outline
Lithography roadmap Performance of EUV1
Evaluation of flare Ultimate resolution Contamination control

Developments toward HVM EUV exposure tools

Optical design of projection optics On-body wavefront control

Summary

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

Optics performance of EUV1

EUV1 PO: WFE and Flare Performance

26 mm 22 mm WFE: 0.4 nm RMS (average)

Min. 0.3nm RMS ~ Max. 0.5nm RMS Flare Kirk flare
estimate/measure)

EUV1 PO#1 EUV1 PO#2

10% 6%

15% / 16% 8% / 8.3%

2m Kirk pattern in bright field

PO#2 has improved WFE and flare than PO#1.

NGL Workshop 2011 Katsuhiko Murakami

NA=0.25
July 12, 2011 6

Evaluation of flare of EUV1

Pattern area

On dark area On clear area

Pattern area 0.5um 32nm L&S 1um 2um

Courtesy of Selete, Intel

Flare impact minimized with PO#2.
5um 10um 50um

PO#1
On dark area

PO#2

PO#1
On clear area

PO#2
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 7

Improvement of mirror polishing technology

Further improvement of MSFR, HSFR Lower flare, Higher reflectivity
10%

8.3%

MSFR
(pmRMS)

HSFR
(pmRMS)

Kirk flare (2um sq/static)

PO#1 PO#2 2010

100~140 70~130 51

70~130 70~120 50

Kirk Flare

5%

3.4% 2.6%
0%

EUV1 PO#2

Expectation for EUV1 best mirror

HVM PO
Expectation for current best mirror

Nikons optics fabrication technology satisfies EUV HVM requirements.

NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 8

Ultimate resolution with phase shift mask

Courtesy of Intel
Conv0.3
Target

28nm

26nm

24nm

23nm

22nm

21nm

Target

20nm

19nm

18nm

17nm

16nm

Modulation down to 16nm HP is evident, however, ultimate resolution is expectedly limited by resist performance. Reference

Target

Dipole

25nm

24nm

23nm

22nm
Katsuhiko Murakami

21nm

20nm

19nm
July 12, 2011 9

NGL Workshop 2011

Contamination study using a synchrotron facility

Neutral density filter Synchrotron radiation Neutral density filter Gate valve with Zr filter Load rock chamber Transfer rod Rotational photo diode Gas inlet Sample stage Exposure chamber
1

Branch chamber Folding mirror

BL 18 at SAGA LS SR facility
8W/cm2

1 0.98

1W/cm2

Relative reflectance

0.95

Relative reflectance

0.96 0.94 0.92 0.9

0.9

1W/cm2

8W/cm2

0.1W/cm2 0.01W/cm2

0.85

0.1W/cm2

0.002W/cm2
0.8 0 200 400 2 Cumulative dose [J/mm ] 600

0.88 0 2 4 6 2 Cumulative dose [J/mm ] 8 10

Contamination growth with perfluorohexane (C6F14)

NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 10

Carbon contamination modeling

Carbon contamination growth rate and cleaning rate with O2 + EUV
1E-1

Contamination modeling
Dominant contamination Dominant cleaning

Cleaning
1E-2

C6F14 (5e-5 Pa) FC3283 (5e-5 Pa) C10H22 (5e-5 Pa) (2e-2 Pa)

ln V Growth / Cleaning rate [nm/s]

nm/s Growth / Cleaning rate [nm/s]

C6F1 4FC32 8 3C1 0H2 2

Modeling

Cleaning

1E-3

Contaminant

1E-4

Contamination
1 10 100 1000 EUV intensity [mW/cm2] mW/cm2 10000

1E-5

ln E EUV intensity [mW/cm2]

Contamination/cleaning modeling was established using data obtained from experiments in SAGA LS.
Details were presented by M. Shiraishi in the previous session as A simple modeling of carbon contamination on EUV exposure tools based on contamination experiments with synchrotron source. NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 11

Suppression of carbon contamination

EUV intensity on reticle
Modeling, Actual
Optimization of O2 cleaning
Modeled Actual

EUVpower[arb.unit(log)]

Replace / cleaning partial IU mirror Replace partial IU mirror

Source maintenance Source maintenance Replace partial IU mirror Cleaning partial IU mirror

Source maintenance

Source maintenance Claning partial IU mirror

10

11

12

13

14

15

16

NumberofpulsesirradiatedtoIU[billionpulses]

After the optimization of O2 in-situ cleaning, rapid degradation of EUV intensity was not observed.
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 12

Suppression of carbon contamination

Transmittance of illumination optics
Oxygenoptimization
Modeled Actual

IUtransmittance[arb.unit] IUtransmittance[arb.unit]

MirrorCleaning
8

10

11

12

13

14

15

16

NumberofpulsesirradiatedintoIU[billionpulses] NumberofpulsesirradiatedtoIU[billionpulses]

After the optimization of O2 in-situ cleaning, transmittance of illumination optics was improved, and didnt show further degradation.
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 13

Outline
Lithography roadmap Performance of EUV1
Evaluation of flare Ultimate resolution Contamination control

Developments toward HVM EUV exposure tools

Optical design of projection optics On-body wavefront control

Summary

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

14

Imaging simulation
11 nm hp, Conv.

Conventional illumination
14nm hp, Conv.

16nm hp, Conv.

Difficult to achieve sufficient process window with conventional illumination below 16nm hp.

Simulation conditions: Aerial image simulation; Dipole (R=0.2), delta CD +/10% of CD, Mask CD error +/-3% of CD, Mask contrast 1:100, Flare 5%, TIS 10%, EL+/-2%

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

15

Imaging simulation
11 nm hp, Dipole

Dipole illumination
14nm hp, Dipole
Dipole =0.2
D

16nm hp, Dipole

16nm hp can be achieved with NA>0.3 and off-axis illumination. NA>=0.4 with OAI will be necessary for 11nm hp.
Simulation conditions: Aerial image simulation; Dipole (R=0.2), delta CD +/10% of CD, Mask CD error +/-3% of CD, Mask contrast 1:100, Flare 5%, TIS 10%, EL+/-2%

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

16

NA>0.4 Optics Design Update

3 types of projection optics design are under investigation
120W for 100wph
PO trans. 4.6% Wave front 11m

Wave front
PO trans. 4% Wave front 33m

Conventional illumination
Obscuration No Obscuration

1.2 1 Contrast 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100

PO trans. 5.9% Wave front 3m C.O. Radius 35.4%

6 mirror

EUV1

NA0.35 NA0.4X

6 mirror with C.O.

NA0.4X

hp (nm)

Dipole illumination
Obscuration No Obscuration

1.2 1 Contrast

NA0.4X
8 mirror

340W for 100wph

PO trans. Wave front 1.6% 2.9m

0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 hp (nm)

NA

0.30

0.40

0.50

Design with central obscuration (CO) has advantage to increase NA. However, impact on imaging should be considered.
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 17

NA>0.4 optics design update

2 Relative preformance 6-mirror system (NA0.25; EUV1) 6-mirror system (NA0.35) 6-mirror system (NA0.4X) 1 6-mirror system (NA0.4X, w/co) 8-mirror system (NA0.4X) 0.5 1.5

0 WFE Flare Photon loss

Photon loss = 1/transmittance

6 mirror system: Relatively large WFE 6 mirror system w/co: Low WFE, high transmittance, impact of central obscuration 8 mirror system: Low WFE, low transmittance, need high-power EUV source Nikon investigation of the optimal high-NA PO design continues.
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 18

Actinic wavefront metrology using SR

EUV wavefront metrology system (EWMS) using New Subaru synchrotron source at University of Hyogo
Digital Talbot interferometer (DTI) and point diffraction interferometer (PDI) using high-brightness EUV source were developed in collaboration with Canon. They showed good accuracy in the measurement of 6-mirror projection optics.

DTI

PDI

8.21 nm

Vacuum chambers Optics Loader

Illuminator

1.32 nm RMS

1.79 nm RMS

-4.83 nm

Difference: 1.08 nm RMS (Z5 - Z36) 0.37 nm RMS (Z7 - Z36)

Beam line Vacuum pumps

Actinic wavefront metrology was established. However, it required synchrotron source.

NGL Workshop 2011 Katsuhiko Murakami

Supported by NEDO
July 12, 2011 19

Principle of multi-incoherent source Talbot interferometer (MISTI)

(1)Single pinhole # of pinhole : 1
Pinhole

(2) Multi pinhole # of pinhole : 1000

(3) Multi pinhole group # of pinhole : 106

MISTI

Test optics

Grating CCD

interval of pinhole groups

DR
grating pitch

DG

Periodical arrangement of pinhole groups makes fringe intensity 106 times brighter than that in a single pinhole interferometer.
NGL Workshop 2011 Katsuhiko Murakami

Each interferogram is superimposed when DG = M x DR

July 12, 2011 20

Demonstration of MISTI
Multi-incoherent source Talbot interferometer (MISTI)
Improved DTI method was developed so that low-brightness EUV source can be applied in collaboration with Canon and Univ. of Electro-Communications . Its good accuracy was demonstrated using 2-mirror projection optics. This method can be applied to on-body wavefront metrology of EUV exposure tools.

Measured wavefront Interferogram Repeatability: 0.02nmRMS Accuracy: 0.25nmRMS Experimental setup of MISTI using 2-mirror projection optics (HiNA-3)

Actinic wavefront metrology using low-brightness source was established.

NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 21

Application of MISTI to EUV1

Repeatability of wavefront metrology
MISTI was applied to EUV1 as on-body wavefront metrology. Repeatability was 0.035nmRMS

1st measurement

2nd measurement

Wavefront controllability
Wavefront was intentionally changed using active mirror control system of PO. Measured wavefront change: 0.378nmRMS Predicted wavefront change: 0.369nmRMS Difference: 0.041nmRMS
Measured wavefront change Predicted wavefront change
NGL Workshop 2011

Excellent controllability of wavefront

July 12, 2011 22

Katsuhiko Murakami

Application of MISTI to EUV1

On-body wavefront fine adjustment
PO was adjusted based on the measured wavefront with MISTI.
L1 L2 LC C1 C2 C3 RC R2 R3

Field
R1

After the adjustment, the measured wavefront L3 was in good agreement with predicted wavefront. Wavefront error [Arb. unit]

Measured point

In good agreement Before adjustment After adjustment Predicted

L1 L2 L3 LC C1 C2 C3 RC R1 R2 R3

Position in the exposure field

On-body fine tuning of PO wavefront is now available.

NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 23

Summary
Lithography roadmap
Target of EUVL is 16-11nm hp node with NA>0.4.

Performance of EUV1
Flare impact on imaging was confirmed. Modulation of 16nmL/S was observed using PSM. Carbon contamination has been successfully suppressed.

Progress towards HVM EUV exposure tools

Significant progress in Optical design of PO with NA >0.4, with verification continuing. New actinic wavefront metrology scheme MISTI was developed and capabilities confirmed. Successful on-body wavefront control using MISTI has been verified.
NGL Workshop 2011 Katsuhiko Murakami
July 12, 2011 24

Acknowledgments
EUVA NEDO METI Selete Intel SAGA Light Source Canon University of Hyogo University of Electro-Communications

NGL Workshop 2011

Katsuhiko Murakami

July 12, 2011

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