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Elecs Suarez C
Elecs Suarez C
Elecs Suarez C
Manila
COLLEGE OF ENGINEERING
Electronics Engineering Department ELE 1 Electronic Devices & Circuits 1(Lec)
ASSIGNMENT
SUBMITTED BY: Sheikh Jeran R. Suarez BSESE 3A SUBMITTED TO: Engr. Edgar A. Galido Instructor September 29, 2011
1. How much voltage is dropped across series resistor R when Vin= 10V?
a. 1.5 V b. 1 V
c. 0.8 V d. 0.9 V
a. 9.9 V b. 10.9 V
c. 9.1 V d. 10.7 V
a. 9.1 V b. 9.2 V
c. 9.3 V d. 9.4 V
4. What is the current through R and the zener diode when Vin= 10 V?
a. 1 mA b. 0.7 mA
c. 0.9 mA d. 0.8 mA
a. 8.1 mW
c. 8.3 mW
b. 8.2 mW
d. NOTA
Solutions:
1. When Vin= 10 V
IR=
=0.9 mA
5. Vin= 10V
Reference Foundation of Electronics Circuits and Devices by Russell L. Meade. Chapter 24 page 846. Practice problem III. Bipolar Junction Transistor
Assume that the circuit in Fig. 27-23 has R1= 10k, R2=2k, RE=1k, RC= 4.7k and VCC= 10V. Determine: 1. Divider current a. 0.83 mA b. O.84 mA c. 0.85 mA d. NOTA
c. 1.67 V d. NOTA
c. 1 V d. NOTA
c. 0.97 mA d. NOTA
a. 4.5 V b. 6.5 V
c. 5 V d. NOTA
Solutions
1. I=
12 = 1.67 V
4. IE=
References Foundation of Electronics Circuits and Devices by Russell L. Meade. Chapter 27 page 942. Practice problem II. Field Effect Transistors
The self- bias circuit shown in Fig. 7-13 contains the hypothetical idealized n-channel JFET whose drain characteristics were given. Determine analytically the values of:
1. ID
a. 8 mA b. 7.913 mA
2. VGS
c. 9 mA d. 10 mA
a. 1.187 V b. -1.187 V
3. VRS
c. 1.2 V d. -1.2 V
a. 1.187 V
c. 3 V
b. 2 V
4. VRD
d. 4V
a. 10 V b. 9 V
5. VDS
c. 11.87 V d. 8 V
a. 11 V b. 10 V Solutions
1. For ID
c. 9 V d. 10.94 V
Det.
ID=IDSS(+
=7.913 mA
2. VGS= -RSID= - (150
)= -1.187 V
3. The voltage VRS across the source resistance has the same magnitude as VGS, but the positive terminal is at
4. VRD= RDID
= (1.5 = 11.87 V
5. VDS= VS VRS - VRD
= 24 1.187 11.87 = 10.94 V Reference Foundation of Electronics Circuits and Devices by Russell L. Meade. Chapter 7 page 329-330.