MANOHAR REDDY 11891D5505

What is SOI? Characteristics of SOI Fabrication methods Basic categorization Electrical anomalies Advantages and Disadvantages

-SOI Silicon-onInsulator -Si layer on top of an insulator layer to build active devices and circuits. -The insulator layer is usually made of SiO2

Include: - High speed - Low power - High device density - Easier device isolation structure

-SOS Silicon-onSapphire -SIMOX Separation by Implantation of Oxygen -ZMR Zone melting and recrystallization

-BESOI Bond and Etch-back -SOI -Smart-cut SOI Technology

-Categorization based on the thickness of the silicon film. -The first is a partially-depleted device and the latter is a fullydepleted device. -Each has its own advantages and disadvantages.

-PD device threshold voltage is insensitive to film thickness.

-FD device has reduced short channel and narrow channel effects.

Floating-body effect: -Usually seen in PartiallyDepleted devices.

- As shown in figure, the MOS structure is accompanied by a parasitic bipolar device in parallel. -The base of this device is floating.

Kink Effect: -Sudden discontinuity in drain current. -Seen when the device is biased in the saturation region. -The bipolar device is turned on. Solution: -Provide a body contact for the device.

Self-heating effect: -Thermal insulation is provided by the oxide surface. -Heat dissipation is not efficient. -This happens only when there is logic switching in the device. In fully-depleted devices, the threshold voltage is sensitive to the thickness of the silicon film. Manufacturing process is comparatively difficult.

Suitable for high-energy radiation environments.

Parasitic capacitances of SOI devices are much smaller. No latch-up.

Easier device isolation -High device density -Easier scaledown of threshold voltage.

A combination of FD and PD devices are used in digital circuitry. Superior capabilities of SOI CMOS technology usage in memory cell implementation.

SOI technology is useful for implementing highspeed op-amps given its low Vt. Higher transconductance (especially of FD) implies higher gain. Lower power consumption compared to bulk devices at low current level.

Major bottleneck is high manufacturing costs of the wafer. Floating-body effects impede extensive usage of SOI. Device integration dopant reaction with the oxide surface. Electrical differences between and SOI nad bulk devices.

Due to its characteristics, SOI is fast becoming a standard in IC fabrication. Several companies have taken up SOI manufacturing. High-volume production of SOI is yet to become common.

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